CN117915549A - Circuit substrate, preparation method thereof and printed circuit board - Google Patents
Circuit substrate, preparation method thereof and printed circuit board Download PDFInfo
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- CN117915549A CN117915549A CN202311782256.8A CN202311782256A CN117915549A CN 117915549 A CN117915549 A CN 117915549A CN 202311782256 A CN202311782256 A CN 202311782256A CN 117915549 A CN117915549 A CN 117915549A
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- resin
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- circuit substrate
- insulating layer
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- 239000000758 substrate Substances 0.000 title claims abstract description 71
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 229920005989 resin Polymers 0.000 claims abstract description 132
- 239000011347 resin Substances 0.000 claims abstract description 132
- 229920005672 polyolefin resin Polymers 0.000 claims abstract description 59
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052582 BN Inorganic materials 0.000 claims abstract description 35
- 239000000126 substance Substances 0.000 claims abstract description 34
- 239000000945 filler Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 14
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical group O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 37
- 239000005062 Polybutadiene Substances 0.000 claims description 17
- 229920002857 polybutadiene Polymers 0.000 claims description 17
- 125000003700 epoxy group Chemical group 0.000 claims description 14
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- IZSHZLKNFQAAKX-UHFFFAOYSA-N 5-cyclopenta-2,4-dien-1-ylcyclopenta-1,3-diene Chemical group C1=CC=CC1C1C=CC=C1 IZSHZLKNFQAAKX-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000011231 conductive filler Substances 0.000 claims description 8
- 239000007822 coupling agent Substances 0.000 claims description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 7
- 238000007731 hot pressing Methods 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 125000003118 aryl group Chemical group 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- WKJHJJCPTMDISE-UHFFFAOYSA-N buta-1,3-diene furan-2,5-dione styrene Chemical compound C=CC=C.O=C1OC(=O)C=C1.C=CC1=CC=CC=C1.C=CC1=CC=CC=C1 WKJHJJCPTMDISE-UHFFFAOYSA-N 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 229920000468 styrene butadiene styrene block copolymer Polymers 0.000 claims description 3
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 177
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 10
- -1 polytetrafluoroethylene Polymers 0.000 description 9
- 239000003292 glue Substances 0.000 description 8
- 239000011342 resin composition Substances 0.000 description 7
- 238000001035 drying Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000011889 copper foil Substances 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000003365 glass fiber Substances 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- PIIRYSWVJSPXMW-UHFFFAOYSA-N 1-octyl-4-(4-octylphenoxy)benzene Chemical compound C1=CC(CCCCCCCC)=CC=C1OC1=CC=C(CCCCCCCC)C=C1 PIIRYSWVJSPXMW-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 241000276425 Xiphophorus maculatus Species 0.000 description 2
- 229920006026 co-polymeric resin Polymers 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- PEVRKKOYEFPFMN-UHFFFAOYSA-N 1,1,2,3,3,3-hexafluoroprop-1-ene;1,1,2,2-tetrafluoroethene Chemical group FC(F)=C(F)F.FC(F)=C(F)C(F)(F)F PEVRKKOYEFPFMN-UHFFFAOYSA-N 0.000 description 1
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- AHYFYQKMYMKPKD-UHFFFAOYSA-N 3-ethoxysilylpropan-1-amine Chemical compound CCO[SiH2]CCCN AHYFYQKMYMKPKD-UHFFFAOYSA-N 0.000 description 1
- 239000005995 Aluminium silicate Substances 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- NJZJPHQOSUWNAU-UHFFFAOYSA-N [SiH4].OCCO Chemical compound [SiH4].OCCO NJZJPHQOSUWNAU-UHFFFAOYSA-N 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0158—Polyalkene or polyolefin, e.g. polyethylene [PE], polypropylene [PP]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0209—Inorganic, non-metallic particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/06—Lamination
- H05K2203/066—Transfer laminating of insulating material, e.g. resist as a whole layer, not as a pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
Abstract
The invention relates to a circuit substrate, a preparation method thereof and a printed circuit board. The circuit substrate comprises an insulating layer and a conductive layer which is laminated on at least one surface of the insulating layer, wherein a resin layer is arranged between the conductive layer and the insulating layer, the material of the insulating layer comprises resin and a heat conducting filler, and the heat conducting filler at least comprises boron nitride; the material of the resin layer comprises polyolefin resin containing unsaturated bonds, wherein the side chains of the polyolefin resin are provided with first active groups, the first active groups are connected with the conductive layer in a chemical bond way, and the unsaturated bonds in the polyolefin resin are chemically bonded with boron nitride. The circuit substrate can have both high heat conduction performance and high peel strength performance.
Description
Technical Field
The invention relates to the technical field of electronic industry, in particular to a circuit substrate, a preparation method thereof and a printed circuit board.
Background
At present, in order to improve the heat dissipation effect of the circuit substrate, a large amount of heat conducting filler is generally added into the insulating layer, wherein boron nitride has higher heat conductivity coefficient compared with other heat conducting fillers, and although the heat conducting effect of the circuit substrate can be better improved, due to the influence of the structural characteristics of the boron nitride and the high-duty ratio filler, the cohesiveness and the joggability between the conductive layer and the insulating layer in the lamination process are poor, so that the peeling strength of the circuit substrate is reduced, and the working stability and the service life of the circuit substrate are influenced.
Although the peel strength of the prepared circuit substrate can be improved by adding the soluble polytetrafluoroethylene resin or modifying the resin, the heat conduction performance of the circuit substrate is affected by the method, and the heat conduction performance of the circuit substrate is deteriorated. Therefore, the conventional circuit substrate still has the problem that the conventional circuit substrate cannot have both high heat conduction performance and high peeling strength.
Disclosure of Invention
In view of the foregoing, it is desirable to provide a circuit board capable of having both high heat conductive performance and high peel strength performance, a method of manufacturing the same, and a printed circuit board.
The circuit substrate comprises an insulating layer and a conductive layer which is laminated on at least one surface of the insulating layer, wherein a resin layer is arranged between the conductive layer and the insulating layer, the material of the insulating layer comprises resin and a heat conducting filler, and the heat conducting filler at least comprises boron nitride;
The material of the resin layer comprises polyolefin resin containing unsaturated bonds, wherein a first active group is arranged on a side chain of the polyolefin resin, the first active group and the conductive layer form chemical bond connection, and the unsaturated bonds in the polyolefin resin and the boron nitride form chemical bond.
In one embodiment, the thickness ratio of the resin layer to the insulating layer is 1:20 to 1:100;
And/or the thickness of the resin layer is 5 μm to 10 μm.
In one embodiment, the first reactive group is selected from at least one of a maleic anhydride group, an epoxy group, a biscyclopentadienyl group, or a cyclohexyl group;
And/or the conductive layer is provided with a second active group, the first active group and the second active group form chemical bond connection, and the second active group is selected from at least one of hydroxyl, amino or carboxyl.
In one embodiment, the polyolefin resin has a structural formula represented by formula (1) or formula (2):
Wherein in the formula (1), R 1 is selected from any one of maleic anhydride group, epoxy group, dicyclopentadienyl group or cyclohexyl group, R 2 is selected from aryl group, a is selected from 10-20, b is selected from 1-10, c is selected from 20-40, d is selected from 20-40, and n is less than or equal to 5; in the formula (2), R 3 is selected from any one of maleic anhydride group, epoxy group, dicyclopentadienyl group or cyclohexyl group, e is selected from 10-20, f is selected from 20-40, g is selected from 20-40, and m is less than or equal to 5.
In one embodiment, the polyolefin resin has a number average molecular weight of 5000g/mol to 11000g/mol.
In one embodiment, the polyolefin resin is selected from at least one of maleic anhydride polybutadiene, maleic anhydride styrene-polydiene copolymer, or maleic anhydride-styrene-butadiene-styrene triblock copolymer.
In one embodiment, the mass fraction of the thermally conductive filler in the insulating layer is greater than or equal to 40%;
And/or the heat conduction filler also comprises at least one of aluminum oxide, silicon nitride, magnesium oxide, zinc oxide, aluminum nitride, silicon carbide or silicon dioxide, wherein the mass fraction of the boron nitride in the heat conduction filler is 20% -70%.
In one embodiment, the material of the resin layer further comprises a filler and/or a coupling agent, wherein the mass fraction of the filler in the resin layer is 40% -70%.
The preparation method of the circuit substrate comprises the following steps:
Providing an insulating layer and a conductive layer;
Placing polyolefin resin containing unsaturated bonds on the surface of the insulating layer, and forming a resin layer through irradiation treatment;
and attaching the resin layer to the surface of the conductive layer, and performing hot pressing to obtain the circuit substrate.
In one embodiment, the polyolefin resin is placed on the surface of the insulating layer, and the irradiation dose is 25kGy to 30kGy and the irradiation time is 10h to 24h in the step of forming the resin layer by irradiation treatment.
In one embodiment, in the step of forming the resin layer by placing the polyolefin resin on the surface of the insulating layer and performing the irradiation treatment, the mass fraction of the unsaturated bonds in the resin layer is 10% or less.
In the circuit substrate, the insulating layer comprises the heat-conducting filler, and the heat-conducting filler comprises the boron nitride with high heat conductivity coefficient, so that the circuit substrate has excellent heat conduction performance. Meanwhile, a resin layer is arranged between the insulating layer and the conductive layer, and the material for limiting the resin layer comprises polyolefin resin containing unsaturated bonds, on one hand, the side chain of the polyolefin resin is provided with a first active group, and the first active group and the conductive layer form chemical bond connection, so that the resin layer and the conductive layer are connected through chemical bonds, and the peeling strength between the conductive layer and the resin layer is improved; on the other hand, the unsaturated bond in the polyolefin resin forms a chemical bond with the boron nitride, so that the resin layer and the insulating layer are connected by the chemical bond, thereby being capable of improving interlayer bonding force between the resin layer and the insulating layer, improving peel strength between the resin layer and the insulating layer, and thus improving peel strength of the circuit substrate. Therefore, the circuit substrate of the invention can have both high heat conduction performance and high peel strength performance.
A printed circuit substrate fabricated using the circuit substrate as described above. The printed circuit board is made of the circuit substrate, so that the printed circuit board has high heat conduction performance and high peeling strength performance.
Drawings
Fig. 1 is a schematic structural diagram of a circuit board according to an embodiment of the invention.
The reference numerals in the drawings are as follows: 1. an insulating layer; 2.a conductive layer; 3. and a resin layer.
Detailed Description
The circuit board, the preparation method thereof and the printed circuit board provided by the invention are further described below.
As shown in fig. 1, the circuit board according to an embodiment of the present invention includes an insulating layer 1 and a conductive layer 2 laminated on at least one surface of the insulating layer 1, wherein a resin layer 3 is disposed between the conductive layer 2 and the insulating layer 1, and the material of the insulating layer 1 includes a resin and a heat conductive filler, and the heat conductive filler includes at least boron nitride, and the boron nitride has a high heat conductivity coefficient, so that the circuit board according to the present invention has an excellent heat conductivity.
However, the addition of the heat conductive filler, particularly the boron nitride itself in a two-dimensional sheet structure, makes the adhesion between the conductive layer 2 and the insulating layer 1 poor, resulting in a decrease in the peel strength of the circuit substrate, particularly the sheet-like boron nitride, which is more remarkable.
For this purpose, in the present invention, the material of the resin layer 3 includes a polyolefin resin having an unsaturated bond, the polyolefin resin having a first active group on a side chain thereof, the first active group forming a chemical bond connection with the conductive layer 2, the unsaturated bond in the polyolefin resin forming a chemical bond with the boron nitride. On one hand, the first active group and the conductive layer 2 form chemical bond connection, so that the resin layer 3 and the conductive layer 2 are connected through chemical bonds, and the peeling strength between the conductive layer 2 and the resin layer 3 is improved; on the other hand, the unsaturated bond in the polyolefin resin forms a chemical bond with the boron nitride, so that the resin layer 3 and the insulating layer 1 are connected by a chemical bond, thereby being capable of improving interlayer bonding force between the resin layer 3 and the insulating layer 1, improving peel strength between the resin layer 3 and the insulating layer 1, and thus improving peel strength of the circuit substrate.
Therefore, the circuit substrate provided by the invention has the advantages of high heat conduction performance and high peel strength.
Alternatively, the thickness ratio of the resin layer 3 to the insulating layer 1 is 1:20 to 1:100, and more preferably 1:50 to 1:100. By the arrangement, the peeling strength of the circuit substrate can be further improved, and the heat conduction performance and the dielectric performance of the circuit substrate are not affected.
Further, the thickness of the resin layer 3 is 5 μm to 10 μm, preferably 5 μm to 8 μm, so that the insulating layer 1 can be further effectively covered, the bonding force between the circuit substrate layers can be improved, the peeling strength of the circuit substrate can be improved, and the influence on the heat conduction performance and the dielectric property of the circuit substrate can be effectively avoided.
Optionally, the first active group is selected from at least one of a maleic anhydride group, an epoxy group, a dicyclopentadienyl group or a cyclohexyl group, and the conductive layer 2 has a second active group selected from at least one of a hydroxyl group, an amino group or a carboxyl group. So set up, first active group and second active group form chemical bond connection, so that first active group with conductive layer 2 forms chemical bond connection, and then makes realize chemical bond connection between resin layer 3 and the conductive layer 2.
Alternatively, the polyolefin resin has a structural formula shown in formula (1) or formula (2):
In the formula (1), R 1 is selected from any one of maleic anhydride group, epoxy group, dicyclopentadienyl group or cyclohexyl group, preferably maleic anhydride group or epoxy group, so that better chemical bond connection between the resin layer 3 and the conductive layer 2 can be realized, the bonding force between layers is improved, and the peel strength of the circuit substrate is further improved.
R 2 is selected from aryl, and further, the aryl is selected from any one of phenyl, naphthyl or o-phenyl, and the aromatic structure has certain heat resistance and rigidity, so that the resin layer 3 has good heat resistance, and further, the peeling strength of the circuit substrate can be further improved, and meanwhile, the heat resistance of the circuit substrate can be improved.
In the formula (1), a is selected from 10 to 20, and the arrangement is mainly that the number of the first active groups capable of chemically reacting with the conductive layer 2 in the polyolefin resin molecular chain is controlled, so that the binding force between the polyolefin resin and the conductive layer 2 can be better improved, and the peeling strength of the circuit substrate can be further improved.
In the formula (1), b is selected from 1 to 10, c is selected from 15 to 30, and d is selected from 15 to 30, and by controlling the number of unsaturated bonds in the polyolefin resin, the bonding force between the polyolefin resin and boron nitride can be further improved, so that the interlayer bonding force between the resin layer 3 and the insulating layer 1 can be further improved, and the peel strength of the circuit board can be further improved.
In the formula (1), n is not more than 5, and the relative molecular mass of the polyolefin resin can be further controlled by controlling the degree of polymerization.
In the formula (2), R 3 is selected from any one of maleic anhydride group, epoxy group, dicyclopentadienyl group or cyclohexyl group, preferably maleic anhydride group or epoxy group, and the arrangement can further realize chemical bond connection between the resin layer 3 and the conductive layer 2, improve the bonding force between layers and further improve the peeling strength of the circuit substrate.
In the formula (2), e is selected from 10-20, and the arrangement is mainly used for controlling the number of the first active groups capable of chemically reacting with the conductive layer 2 in the polyolefin resin molecular chain, so that the bonding force between the polyolefin resin and the conductive layer 2 can be better improved, and the peeling strength of the circuit substrate can be further improved.
In the formula (2), f is selected from 15 to 30, g is selected from 15 to 30, and the bonding force between the polyolefin resin and the boron nitride can be further improved by controlling the number of unsaturated bonds in the polyolefin resin, so that the interlayer bonding force between the resin layer 3 and the insulating layer 1 can be further improved, and the peel strength of the circuit substrate can be further improved.
In the formula (2), m is not more than 5, and the relative molecular mass of the polyolefin resin can be further controlled by controlling the degree of polymerization.
Therefore, the polyolefin resin represented by the formula (1) or the formula (2) can further improve the bonding force between the resin layer 3 and the insulating layer 1 and between the resin layer 3 and the conductive layer 2, further improve the peel strength of the circuit board, and does not affect the heat conduction effect.
In the present invention, the structural formula of the polyolefin resin is preferably formula (1).
Alternatively, the polyolefin resin has a number average molecular weight of 5000g/mol to 11000g/mol. By this arrangement, the polyolefin resin has excellent heat resistance, and the peel strength of the circuit board can be further improved.
Further, the polyolefin resin is selected from at least one of maleic anhydride polybutadiene, maleic anhydride styrene-polydiene copolymer or maleic anhydride-styrene-butadiene-styrene triblock copolymer, preferably maleic anhydride polybutadiene.
Optionally, the mass fraction of the heat conductive filler in the insulating layer 1 is greater than or equal to 40%, so that the heat conductive property, the peeling strength and the dielectric property of the circuit substrate can be further improved.
Further, the heat-conducting filler also comprises at least one of aluminum oxide, silicon nitride, magnesium oxide, zinc oxide, aluminum nitride, silicon carbide or silicon dioxide, and the mass fraction of the boron nitride in the heat-conducting filler is 20% -70%. By the arrangement, the heat conduction performance, the peeling strength and the dielectric performance of the circuit substrate can be further improved.
It is understood that as the boron nitride content increases, the heat conductive property of the circuit substrate can be further improved, and at the same time, the number of chemical bonds with unsaturated bonds in the polyolefin resin can be increased, so that the peel strength of the circuit substrate can be further improved.
In one embodiment, the median particle diameter of the thermally conductive filler in the insulating layer 1 is 1 μm to 50 μm.
In one embodiment, the boron nitride is preferably hexagonal boron nitride.
In one embodiment, the resin is selected from fluorine-containing resins. By the arrangement, the heat conduction performance of the circuit substrate can be further improved, and meanwhile, the dielectric performance of the circuit substrate can be improved.
Further, the fluorine-containing resin is at least one selected from polytetrafluoroethylene resin, tetrafluoroethylene-hexafluoropropylene copolymer resin, tetrafluoroethylene-ethylene copolymer resin, copolymer resin of tetrafluoroethylene and perfluoro (alkyl vinyl) ether, vinylidene fluoride and ethylene-ethylene tetrafluoroethylene copolymer resin, polyvinylidene fluoride resin. In view of the fact that the polytetrafluoroethylene resin has the most symmetrical molecular structure, the molecules are nonpolar, and the dielectric constant and dielectric loss are the smallest, i.e., the dielectric properties are the most excellent, the fluorine-containing resin is preferably polytetrafluoroethylene resin.
Optionally, the material of the resin layer 3 further comprises a filler and/or a coupling agent.
When a filler is contained, the filler is 40 to 70% by mass in the resin layer, and the filler is selected from aluminum oxide, silicon nitride, magnesium oxide, zinc oxide, aluminum nitride, silicon carbide, or silicon dioxide. By doing so, the performance stability of the resin layer 3 can be further improved.
In one embodiment, the filler in the resin layer 3 has a median particle diameter of 0.1 μm to 1 μm.
When the resin layer further contains a coupling agent, the mass fraction of the coupling agent in the resin layer is 0.5% -2%.
In one embodiment, a polyolefin resin containing an unsaturated bond, a filler, and a coupling agent are mixed to form a resin composition, and the resin composition is applied to the surface of the insulating layer 1 to obtain a resin layer 3.
Meanwhile, the preparation method of the circuit substrate provided by the invention comprises the following steps:
s1, providing an insulating layer 1 and an electric conduction layer 2, wherein the material of the insulating layer 1 comprises resin and a heat conduction filler, and the heat conduction filler at least comprises boron nitride;
s2, placing polyolefin resin containing unsaturated bonds on the surface of the insulating layer 1, and forming a resin layer 3 through irradiation treatment;
S3, attaching the resin layer 3 to the surface of the conductive layer 2, and obtaining a circuit substrate through hot pressing; wherein the material of the resin layer 3 comprises a polyolefin resin containing unsaturated bonds, the side chains of the polyolefin resin are provided with first active groups, the first active groups and the conductive layer 2 form chemical bond connection, and the unsaturated bonds in the polyolefin resin and the boron nitride form chemical bond.
In step S1, the insulating layer 1 may be prepared according to the first or second embodiment.
In the first embodiment, resin and a heat-conducting filler are mixed to form a resin glue solution, the resin glue solution is formed on the surface of a reinforcing material (such as glass fiber cloth), and the insulating layer 1 is obtained through drying and sintering.
In the second embodiment, the resin and the heat conductive filler are mixed to form a resin glue solution, the resin glue solution is formed on the surface of the supporting substrate, and the supporting substrate is removed after drying and sintering to obtain the insulating layer 1.
The present invention is preferably in the first embodiment.
In step S1, the conductive layer 2 has a second active group, where the first active group and the second active group form a chemical bond connection, and the second active group is at least one of a hydroxyl group, an amino group, or a carboxyl group.
The conductive layer 2 may be self-provided with the second active group, or the conductive layer 2 may be treated with a silane coupling agent selected from at least one of aminopropyl ethoxy silane (KH 550), ethylene glycol silane coupling agent, or carboxylic acid silane coupling agent so that the surface of the conductive layer 2 has the second active group.
The conductive layer 2 in the present invention is preferably copper foil.
In step S2, the polyolefin resin is preferably coated on the surface of the insulating layer 1 by one of comma roll transfer coating, micro gravure coating, and nip extrusion coating, and is dried and irradiated to obtain the resin layer 3 having a thickness of 5 μm to 10 μm with high precision.
Further, the drying temperature is 110-140 ℃ and the drying time is 5-8 min.
It can be understood that under irradiation, unsaturated bonds in the molecular chain of the polyolefin resin can be opened to generate free radicals, and at the same time, B-N bonds of boron nitride in the insulating layer 1 are broken and react with the generated free radicals under irradiation, so that chemical bonds are formed between the unsaturated bonds in the polyolefin resin and the boron nitride, thereby realizing chemical bond connection between the resin layer 3 and the insulating layer 1, improving interlayer bonding force between the resin layer 3 and the insulating layer 1, and further improving peel strength and dielectric properties of the circuit substrate.
Further, in the irradiation treatment process, the irradiation dose is 25kGy-30kGy, and the irradiation time is 10h-24h. By adjusting and controlling the irradiation dose and irradiation time of irradiation treatment, the method can further ensure that unsaturated bonds in the polyolefin resin are fully opened and boron nitride B-N bonds are fully broken, so that the bonding force between the polyolefin resin and boron nitride can be improved, the structure of the insulating layer 1 is not influenced, and the dielectric property and the heat conducting property of the circuit substrate are ensured.
In the present invention, the content of the unsaturated bond in the resin layer 3 is detected to determine whether or not the chemical bond between the unsaturated bond and the boron nitride b—n bond in the polyolefin resin containing the unsaturated bond and the degree of the chemical bond are performed, so that the bonding force between the resin layer 3 and the insulating layer 1 can be ensured.
In one embodiment, infrared detection is used to detect the content of unsaturated bonds in the resin layer 3.
Alternatively, the mass fraction of the unsaturated bonds in the resin layer 3 is 10% or less, which indicates that chemical bonding has been sufficiently performed between the unsaturated bonds and the boron nitride B-N bonds in the polyolefin resin, and at this time, the irradiation treatment may be stopped, so that the interlayer adhesion between the resin layer 3 and the insulating layer 1 can be further improved, and the peel strength and heat conductive property of the circuit substrate can be improved, without affecting the performance of the insulating layer 1.
In the step S3, a first active group on a side chain of the polyolefin resin in the resin layer 3 is selected from at least one of a maleic anhydride group, an epoxy group, a dicyclopentadienyl group or a cyclohexyl group, and in the hot pressing process, the first active group on the side chain of the polyolefin resin can form a chemical bond with a second active group on the surface of the conductive layer 2, so that chemical bond connection is realized between the resin layer 3 and the conductive layer 2.
Further, the hot pressing temperature is 150-250 ℃, and the hot pressing time is 4-8 h.
Therefore, the preparation method of the circuit substrate is simple and is suitable for industrial production.
The invention also provides a printed circuit board manufactured by the circuit board. The printed circuit board has the advantages of high heat conduction performance and high peel strength.
Hereinafter, the circuit substrate, the method of manufacturing the same, and the printed circuit board will be further described by the following specific examples. Meanwhile, the reagents according to the examples and comparative examples of the present invention are commercially available.
Example 1
59.91 Parts by weight of flaky boron nitride (brand brocade BN203U with a median particle diameter of 13 mu m), 0.76 part by weight of polyethylene glycol mono-octyl phenyl ether dispersant, 51.42 parts by weight of aluminum oxide (brocade QY5 with a median particle diameter of 8 mu m) and deionized water are uniformly mixed, and then 100 parts by weight of polytetrafluoroethylene suspension (giant JF-4DCM with a solid content of 60%) is added and uniformly mixed to obtain resin glue solution; and (3) coating the obtained resin glue solution on glass fiber cloth, and drying to obtain the insulating layer with the thickness of 500 mu m.
100 Parts by weight of a maleic anhydride polybutadiene resin (trade name crayvalley: ricon184MA6, number average molecular weight: 8600g/mol, in the formula (1), R 1 is a maleic anhydride group, R 2 is a benzene ring group, a is 12, b is 5, c is 22, d is 23, n is 2) was mixed in a xylene solvent, and then 99 parts by weight of an alumina filler (brocade QY4, median particle diameter: 0.6 μm) and 1 part by weight of KH550 coupling agent were added and stirred uniformly to obtain a resin composition; the resin composition is coated on the surface of the obtained insulating layer, is dried at 135 ℃ for 7min, and is then placed in a high-energy synchronous radiation light source (Shanghai light source bl03 ss) for irradiation treatment, wherein the irradiation process parameters are as follows: the irradiation dose is 25kGy, and the irradiation time is 15h; after the irradiation was completed, a resin layer having a thickness of 5 μm was formed, and the thickness ratio of the resin layer to the insulating layer was 1:100, at which time the mass fraction of vinyl groups in the resin layer was 5.1%.
Copper foil (trade name: jinbao RT3-MP-1, having hydroxyl groups on the surface) with a thickness of 35 μm and a surface roughness of 3 μm was bonded to the surface of the resin layer obtained above, and then pressed at 230℃for 6 hours to obtain a circuit board.
Example 2
Uniformly mixing 73.65 parts by weight of flaky boron nitride (brand brocade BN203U with a median particle diameter of 13 mu m), 1.24 parts by weight of polyethylene glycol monooctyl phenyl ether dispersant, 60.10 parts by weight of aluminum oxide (brocade QY5 with a median particle diameter of 8 mu m) and deionized water, and then adding 100 parts by weight of polytetrafluoroethylene suspension (giant JF-4DCM with a solid content of 60%) to uniformly mix to obtain resin glue solution; and (3) coating the obtained resin glue solution on glass fiber cloth, and drying to obtain the insulating layer with the thickness of 200 mu m.
80 Parts by weight of an epoxy-polybutadiene resin (trade name crayvalley: ricon184SB7, number average molecular weight: 9300g/mol, in the formula (1), R 1 is an epoxy group, R 2 is a naphthyl group, a is 16, b is 8,c is 27, d is 28, n is 2) and 20 parts by weight of a polyphenylene ether resin (Haisen Weiyun ZM 035) are mixed in a xylene solvent, and then 160 parts by weight of an alumina filler (brocade QY4, median particle diameter: 0.6 μm) and 1 part by weight of KH550 coupling agent are added and stirred uniformly to obtain a resin composition; the resin composition is coated on the surface of the obtained insulating layer, is dried at 135 ℃ for 7min, and is then placed in a high-energy synchronous radiation light source (Shanghai light source bl03 ss) for irradiation treatment, wherein the irradiation process parameters are as follows: the irradiation dose is 30kGy, and the irradiation time is 12 hours; after completion of irradiation, a resin layer having a thickness of 9 μm was formed, and the thickness ratio of the resin layer to the insulating layer was 9:200, at which time the mass fraction of vinyl groups in the resin layer was 7.1%.
Copper foil (trade name: jinbao RT3-MP-1, having hydroxyl groups on the surface) with a thickness of 35 μm and a surface roughness of 3 μm was bonded to the surface of the resin layer obtained above, and then pressed at 230℃for 6 hours to obtain a circuit board.
Example 3
Example 3 was different from example 1 only in that a cyclohexyl-polybutadiene resin (trade name crayvalley: ricon131HA18, number average molecular weight 5300g/mol, formula (1) in which R 1 is cyclohexyl, R 2 is a benzene ring group, a is 10, b is 3, c is 17, d is 17, n is 2) was used instead of a maleic anhydride polybutadiene resin (trade name crayvalley: ricon184MA6, number average molecular weight 8600g/mol, formula (1) in which R 1 is a maleic anhydride group, R 2 is a benzene ring group, a is 12, b is 5, c is 22, d is 23, n is 2), and the other conditions were the same, and a circuit board was obtained in which the mass fraction of vinyl groups in the resin layer was 3.8%.
Example 4
Example 4 was different from example 1 only in that a maleic anhydride polybutadiene resin (trade name crayvalley: ricon184MA6-1, number average molecular weight: 7300g/mol, formula (2) in which R 3 is a maleic anhydride group, e is 11, f is 24, g is 21, m is 2) was used instead of a maleic anhydride polybutadiene resin (trade name crayvalley: ricon184MA6, number average molecular weight: 8600g/mol, formula (1) in which R 1 is a maleic anhydride group, R 2 is a benzene ring group, a is 12, b is 5, c is 22, d is 23, n is 2), and the other conditions were the same, and a circuit board was obtained, in which the mass fraction of vinyl groups in the resin layer was 5.0%.
Example 5
Example 5 was different from example 1 only in that an epoxy-polybutadiene resin (trade name: CRAY VALLEY: ricon184SB7-1, number average molecular weight: 10600g/mol, in the formula (2), R 3 was an epoxy group, e was 10, f was 15, g was 18, m was 4) was used instead of a maleic anhydride polybutadiene resin (trade name: crayvalley: ricon184MA6, number average molecular weight: 8600g/mol, in the formula (1), R 1 was a maleic anhydride group, R 2 was a benzene ring group, a was 12, b was 5, c was 22, d was 23, n was 2), and the other conditions were the same, to obtain a circuit board, wherein the mass fraction of vinyl groups in the resin layer was 4.8%.
Example 6
Example 6 differs from example 1 only in that a maleic anhydride polybutadiene resin (CRAY VALLEY: ricon184MA6-2, number average molecular weight: 7100g/mol, formula (1) in which R 1 is maleic anhydride, R 2 is a benzene ring group, a is 7, b is 5, c is 22, d is 23, n is 2) was used instead of the maleic anhydride polybutadiene resin (trade name crayvalley: ricon184MA6, number average molecular weight: 8600g/mol, formula (1) in which R 1 is a maleic anhydride group, R 2 is a benzene ring group, a is 12, b is 5, c is 23, n is 2), and the other conditions are the same, and a circuit board was obtained in which the mass fraction of vinyl groups in the resin layer is 5.1%.
Example 7
Example 7 was different from example 1 only in that a copper foil (trade name: jinbao RT3-MP-2 having an amino group on the surface) was used instead of the copper foil (trade name: jinbao RT3-MP-1 having a hydroxyl group on the surface), and the remaining conditions were the same, to obtain a circuit board, in which the mass fraction of vinyl groups in the resin layer was 4.9%.
Example 8
Example 8 differs from example 1 only in the irradiation treatment process parameters: the irradiation dose is 35kGy, the irradiation time is 30h, and the rest conditions are the same, so that the circuit substrate is obtained, wherein the mass fraction of vinyl in the resin layer is 1.1%.
Example 9
Example 9 was different from example 1 only in that 25.1 parts by weight of plate-like boron nitride, 13.3 parts by weight of alumina, and the other conditions were the same, to obtain a circuit board in which the mass fraction of vinyl groups in the resin layer was 5.1%.
Example 10
Example 10 was different from example 1 only in that spherical boron nitride (3 MCFP012P, median diameter: 30 μm) was used instead of flaky boron nitride (brand brocade BN203U, median diameter: 13 μm), and the remaining conditions were the same, to obtain a circuit substrate in which the mass fraction of vinyl groups in the resin layer was 5.0%.
Comparative example 1
Comparative example 1 was different from example 1 only in that a maleic anhydride-polyphenylene ether resin (Asahi chemical: APPE-LM, number average molecular weight: 15000 g/mol) was used instead of a maleic anhydride polybutadiene resin (trade name crayvalley: ricon184MA6, number average molecular weight: 8600g/mol, in the formula (1), R 1 was a maleic anhydride group, R 2 was a benzene ring group, a was 12, b was 5, c was 22, d was 23, n was 2), and the remaining conditions were the same, to obtain a circuit board, wherein the mass fraction of vinyl groups in the resin layer was 5.2%.
Comparative example 2
Comparative example 2 was different from example 1 only in that a polybutadiene resin (trade name: CRAY VALLEY: ricon184SB7-2, number average molecular weight: 6300 g/mol) was used instead of the maleic anhydride polybutadiene resin (trade name: crayvalley: ricon184MA6, number average molecular weight: 8600g/mol, in the formula (1), R 1 was a maleic anhydride group, R 2 was a benzene ring group, a was 12, b was 5, c was 22, d was 23, n was 2), and the remaining conditions were the same, to obtain a circuit substrate, wherein the mass fraction of vinyl groups in the resin layer was 4.9%.
Comparative example 3
Comparative example 3 was different from example 1 only in that the irradiation treatment was not performed, that is, the resin composition was applied to the surface of the insulating layer obtained as described above, and the insulating layer with a thickness of 5 μm was obtained by baking at 135 ℃ for 7min, and the thickness ratio of the resin layer to the insulating layer was 1:100, at which time the mass fraction of vinyl groups in the resin layer was 38.3%, and the other conditions were the same, to obtain a circuit substrate.
Comparative example 4
Comparative example 4 was different from example 1 only in that in the process of preparing an insulating layer, platy kaolin (trade name HydriteUF, median particle diameter 11 μm) was used instead of platy boron nitride (trade name brocade BN203U, median particle diameter 13 μm), and the remaining conditions were the same, to obtain a circuit substrate, wherein the mass fraction of vinyl groups in the resin layer was 4.9%.
The circuit substrates of examples 1 to 10 and comparative examples 1 to 4 were subjected to performance test, and the test results are shown in table 1.
Wherein, peel strength performance: test methods were according to IPC TM-6502.4.8C.
Thermal conductivity: test methods were according to ASTM-D5470.
Dielectric properties: the test method is according to IPC-TM-6502.5.5.5.
TABLE 1
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (12)
1. The circuit substrate is characterized by comprising an insulating layer and an electric conduction layer which is laminated on at least one surface of the insulating layer, wherein a resin layer is arranged between the electric conduction layer and the insulating layer, the material of the insulating layer comprises resin and a heat conduction filler, and the heat conduction filler at least comprises boron nitride;
The material of the resin layer comprises polyolefin resin containing unsaturated bonds, wherein a first active group is arranged on a side chain of the polyolefin resin, the first active group and the conductive layer form chemical bond connection, and the unsaturated bonds in the polyolefin resin and the boron nitride form chemical bond.
2. The circuit substrate of claim 1, wherein a thickness ratio of the resin layer to the insulating layer is 1:20 to 1:100;
And/or the thickness of the resin layer is 5 μm to 10 μm.
3. The circuit substrate of claim 1, wherein the first reactive group is selected from at least one of a maleic anhydride group, an epoxy group, a biscyclopentadienyl group, or a cyclohexyl group;
And/or the conductive layer is provided with a second active group, the first active group and the second active group form chemical bond connection, and the second active group is selected from at least one of hydroxyl, amino or carboxyl.
4. The circuit substrate according to claim 1, wherein the polyolefin resin has a structural formula represented by formula (1) or formula (2):
Wherein in the formula (1), R 1 is selected from any one of maleic anhydride group, epoxy group, dicyclopentadienyl group or cyclohexyl group, R 2 is selected from aryl group, a is selected from 10-20, b is selected from 1-10, c is selected from 15-30, d is selected from 15-30, and n is less than or equal to 5; in the formula (2), R 3 is selected from any one of maleic anhydride group, epoxy group, dicyclopentadienyl group or cyclohexyl group, e is selected from 10-20, f is selected from 15-30, g is selected from 15-30, and m is less than or equal to 5.
5. The circuit board of claim 4, wherein the polyolefin resin has a number average molecular weight of 5000g/mol to 11000g/mol.
6. The circuit board of claim 4, wherein the polyolefin resin is selected from at least one of maleic anhydride polybutadiene, maleic anhydride styrene-polydiene copolymer, or maleic anhydride-styrene-butadiene-styrene triblock copolymer.
7. The circuit substrate according to claim 1, wherein a mass fraction of the thermally conductive filler in the insulating layer is greater than or equal to 40%;
And/or the heat conduction filler also comprises at least one of aluminum oxide, silicon nitride, magnesium oxide, zinc oxide, aluminum nitride, silicon carbide or silicon dioxide, wherein the mass fraction of the boron nitride in the heat conduction filler is 20% -70%.
8. The circuit substrate according to any one of claims 1 to 7, wherein the material of the resin layer further comprises a filler and/or a coupling agent, wherein the mass fraction of the filler in the resin layer is 40% to 70%.
9. A method of manufacturing the circuit substrate according to any one of claims 1 to 8, comprising:
Providing an insulating layer and a conductive layer;
Placing polyolefin resin containing unsaturated bonds on the surface of the insulating layer, and forming a resin layer through irradiation treatment;
and attaching the resin layer to the surface of the conductive layer, and performing hot pressing to obtain the circuit substrate.
10. The method for producing a circuit board according to claim 9, wherein in the step of placing the polyolefin resin on the surface of the insulating layer and forming the resin layer by irradiation treatment, the irradiation dose is 25kGy to 30kGy and the irradiation time is 10h to 24h.
11. The method according to claim 9, wherein in the step of forming the resin layer by placing the polyolefin resin on the surface of the insulating layer and performing irradiation treatment, the mass fraction of unsaturated bonds in the resin layer is 10% or less.
12. A printed circuit substrate manufactured using the circuit substrate according to any one of claims 1 to 8.
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