CN117914295B - IGBT driving configuration device - Google Patents
IGBT driving configuration device Download PDFInfo
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- CN117914295B CN117914295B CN202410314181.9A CN202410314181A CN117914295B CN 117914295 B CN117914295 B CN 117914295B CN 202410314181 A CN202410314181 A CN 202410314181A CN 117914295 B CN117914295 B CN 117914295B
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- 239000003990 capacitor Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 11
- 230000001105 regulatory effect Effects 0.000 claims description 37
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000004891 communication Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00307—Modifications for increasing the reliability for protection in bipolar transistor circuits
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Abstract
The application discloses an IGBT driving configuration device, which comprises an acquisition module, a control module and a control module, wherein the acquisition module is used for acquiring operation data of a power module; the control module is connected with the acquisition module; the pulse signal generating device is connected with the control module; the adjusting module comprises an adjustable power supply module, a converting circuit, a grid resistance module, an adjustable capacitor Cge and a grid-emitter resistance Rge; the switching circuit is respectively connected with the pulse signal generating device, one end of the adjustable power supply module and one end of the grid resistance module; the other end of the grid resistor module is sequentially connected with one end of the adjustable capacitor Cge and one end of the grid-emitter resistor Rge; the other end of the gate-emitter resistor Rge and the other end of the adjustable power supply module are respectively connected with the gate terminal of the IGBT and the emitter terminal of the IGBT. According to the application, by integrating a plurality of adjustable driving parameters, the dynamic adjustment of the parameters can be realized in the working process of the IGBT.
Description
Technical Field
The application relates to an IGBT driving configuration device, in particular to an IGBT driving configuration device with adjustable parameters, and belongs to the technical field of power electronics.
Background
IGBT has been changed and developed for many generations since the advent of the prior art, and has been widely used in the key fields of industrial manufacturing, power transmission and distribution, transportation, aerospace, renewable energy, daily consumer products, and military industry, where in these fields of application, IGBT driving configuration is a critical link in IGBT application and circuit design, and whether driving parameters are appropriate will directly affect the stability and reliability of product operation.
However, more than one driving parameter of the IGBT includes a driving resistor Rg (on resistance, off resistance), a gate-emitter capacitor Cge, a gate-emitter resistor Rge, a driving positive voltage vge+ and a driving negative voltage Vge-, when the IGBT is tested, any one parameter may be changed to cause a huge difference between the IGBT switch and the electrical characteristics, only a single parameter modification can be performed in the test in the conventional manner, the modification process is tedious and time-consuming, and the IGBT has no high efficiency, and meanwhile, the driving parameters are fixed in the operation process and cannot be actively adjusted according to the working condition of the module, so that the module has a large risk in working under a special working condition.
Disclosure of Invention
In view of the above, the present application provides an IGBT driving configuration device for solving the problems of complicated operation and non-adjustable driving parameters in the conventional driving parameter configuration. The specific scheme is as follows:
An IGBT drive configuration device comprising:
the acquisition module is arranged on the power module and used for acquiring the operation data of the power module;
the control module is connected with the acquisition module;
The pulse signal generating device is connected with the control module;
The adjusting module comprises an adjustable power supply module, a converting circuit, a grid resistance module, an adjustable capacitor Cge and a grid-emitter resistance Rge;
The switching circuit is respectively connected with the pulse signal generating device, one end of the adjustable power supply module and one end of the grid resistance module;
The other end of the grid resistor module is sequentially connected with one end of the adjustable capacitor Cge and one end of the grid-emitter resistor Rge;
And the other end of the emitter resistor Rge and the other end of the adjustable power supply module are respectively connected with a gate terminal of the IGBT and an emitter terminal of the IGBT.
Preferably, the conversion circuit includes: an emitter of the NPN triode Q1 is electrically connected with an emitter of the PNP triode Q2, and a collector of the NPN triode Q1 and a collector of the PNP triode Q2 are respectively connected with the adjustable power supply module;
The junction of the emitter of the NPN triode Q1 and the emitter of the PNP triode Q2 is connected with one end of a gate-emitter resistor Rge, and the junction of the base of the NPN triode Q1 and the base of the PNP triode Q2 is connected with the pulse signal generating device.
Preferably, the control module comprises an upper computer and an integrated automatic control module;
The integrated automatic control module is respectively connected with the acquisition module and the upper computer;
the upper computer is connected with the pulse signal generating device.
Preferably, the adjustable power supply module comprises an adjustable direct current regulated power supply DC1 and an adjustable direct current regulated power supply DC2;
The positive electrode of the adjustable direct current regulated power supply DC1 is electrically connected with the collector electrode of the NPN triode Q1, and the negative electrode of the adjustable direct current regulated power supply DC1 is electrically connected with the positive electrode of the adjustable direct current regulated power supply DC 2;
The positive poles of the adjustable direct current regulated power supply DC2 and the adjustable direct current regulated power supply DC2 are respectively and electrically connected with the negative pole of the adjustable direct current regulated power supply DC1, and the negative pole of the adjustable direct current regulated power supply DC2 is electrically connected with the collector of the PNP triode Q2;
the gate-emitter resistor Rge is connected with the connection part of the positive electrode of the adjustable direct current regulated power supply DC2 and the adjustable direct current regulated power supply DC 1.
Preferably, the gate resistance module includes a switch S1, a diode D2, and a series circuit of an adjustable resistor Rg1 and an adjustable resistor Rg 2;
the switch S1 and the diode D2 are connected in series, and two ends of a series circuit of the switch S1 and the diode D2 are respectively connected with two ends of a series circuit of the adjustable resistor Rg1 and the adjustable resistor Rg 2;
One end of a series circuit of the adjustable resistor Rg1 and the adjustable resistor Rg2 is connected to the connection part of the emitter of the NPN triode Q1 and the emitter of the PNP triode Q2, and the other end of the series circuit of the adjustable resistor Rg1 and the adjustable resistor Rg2 is electrically connected with an IGBT gate terminal.
Preferably, the resistance of the adjustable resistor Rg1, the resistance of the adjustable resistor Rg2, the resistance of the gate-emitter resistor Rge, and the capacitance of the adjustable capacitor Cge can be set independently;
the adjustable resistor Rg1, the adjustable resistor Rg2, the gate-emitter resistor Rge, the adjustable direct current regulated power supply DC1, the adjustable direct current regulated power supply DC2 and the adjustable capacitor Cge are respectively connected with an integrated automatic control module.
The application has the beneficial effects that:
According to the IGBT driving configuration device provided by the invention, the level value generated by the pulse signal generating device is used for realizing the on-off of the conversion circuit; the switching of the positive/negative of the IGBT gate-emitter driving voltage Vge is realized through the arranged switching circuit; thereby realizing integration of a plurality of adjustable driving parameters of the IGBT; the adjustable resistor module, the adjustable power module and the adjustable capacitor Cge are used for adjusting the IGBT driving parameter value, the set acquisition module is used for acquiring the operation data of the power module in real time, the acquisition module is connected with the control module, and the control module is used for adjusting the IGBT driving parameter configuration in real time according to the feedback value of the acquisition module, so that the flexibility and the high efficiency of the IGBT driving parameter configuration are improved, the parameter dynamic adjustment can be realized in the IGBT working process, and the working stability and the product reliability of the IGBT are ensured.
Drawings
Fig. 1 is a schematic circuit diagram of an IGBT drive configuration device according to the present application;
FIG. 2 is a schematic diagram of a circuit for determining the gate-emitter drive voltage Vge in an IGBT drive configuration device according to the present application;
Fig. 3 is a circuit schematic diagram of the IGBT driving configuration device according to the present application when the gate-emitter driving voltage Vge is negative.
List of parts and reference numerals:
10. An upper computer; 20. a pulse signal generating device; 30. an information acquisition module; 40. an integrated automatic control module; 100. the IGBT drives the configuration device.
Detailed Description
The present application is described in detail below with reference to examples, but the present application is not limited to these examples.
As shown in fig. 1, the present application provides an IGBT driving configuration apparatus 100 for configuring driving parameters of an IGBT, which is capable of adjusting a plurality of driving parameters, thereby obtaining reliable driving parameters.
The IGBT driving configuration device 100 includes an acquisition module (i.e., the information acquisition module 30 in this embodiment), an integrated automatic control module 40, an upper computer 10, a pulse signal generating device 20, an adjustable power module (including an adjustable DC regulated power supply DC1 and an adjustable DC regulated power supply DC 2), a conversion circuit (including an NPN transistor Q1 and a PNP transistor Q2), a gate resistance module (including a diode D2 and a switch S1 connected in series, a series circuit of an adjustable resistor Rg1 and an adjustable resistor Rg 2), an adjustable capacitor Cge, and a gate-emitter resistor Rge.
Specifically, in the above embodiment, the negative electrode of the adjustable DC voltage-stabilizing power supply DC1 is electrically connected to the positive electrode of the adjustable DC voltage-stabilizing power supply DC2, and the positive electrode of the adjustable DC voltage-stabilizing power supply DC1 is electrically connected to the collector electrode of the NPN transistor Q1;
the connection part of the negative electrode of the adjustable direct current regulated power supply DC1 and the positive electrode of the adjustable direct current regulated power supply DC2 is electrically connected with the emitter terminal of the IGBT;
The negative electrode of the adjustable direct current regulated power supply DC2 is electrically connected with the collector electrode of the PNP triode Q2;
The emitter of the NPN triode Q1 is electrically connected with the emitter of the PNP triode Q2, and the junction of the emitter of the NPN triode Q1 and the emitter of the PNP triode Q2 is connected with the grid resistor module; the base of the NPN triode Q1 is electrically connected with the base of the PNP triode Q2, and the junction of the base of the NPN triode Q1 and the base of the PNP triode Q2 is electrically connected with the output end of the pulse signal generating device.
In the gate resistance module, the adjustable resistor Rg1 and the adjustable resistor Rg2 are connected in series to form a series circuit of the adjustable resistor Rg1 and the adjustable resistor Rg 2; the diode D2 is connected with the switch S1 in series to form a series circuit of the diode D2 and the switch S1;
One end of a series circuit of the adjustable resistor Rg1 and the adjustable resistor Rg2 is connected with the connection part of the emitter of the NPN triode Q1 and the emitter of the PNP triode Q2; the other end of the series circuit of the adjustable resistor Rg1 and the adjustable resistor Rg2 is respectively and electrically connected with the gate terminal of the IGBT and one end of the adjustable capacitor Cge;
the diode D2 is connected in series with the switch S1 and then connected in parallel with the adjustable resistor Rg2 (i.e., one end of a series circuit of the diode D2 and the switch S1 is connected between the adjustable resistor Rg1 and the adjustable resistor Rg2, and the other end of the series circuit of the diode D2 and the switch S1 is connected at one end of the adjustable resistor Rg2 away from the adjustable resistor Rg 1);
The gate-emitter resistor Rge is positioned on one side of the adjustable capacitor Cge far away from the adjustable resistor Rg2, and the gate-emitter resistor Rge is connected with the adjustable capacitor Cge in series; and two ends of the gate-emitter resistor Rge and the adjustable capacitor Cge series circuit are respectively connected with a gate terminal of the IGBT and an emitter terminal of the IGBT.
Specifically, in the above embodiment, the upper computer 10 is configured to set, on the one hand, the number of pulses and the pulse duration to be sent, where the pulse signal is determined according to the application scenario of the IGBT and is set by the user independently, and the upper computer 10 implements communication with the pulse signal generating device 20 through a wired communication protocol, so as to issue a pulse instruction; the host computer 10 is configured to communicate with the integrated automatic control module 40 through a wired communication protocol, and is configured to control the functional enablement of the integrated automatic control module 40.
Specifically, in the above embodiment, the pulse signal generating device 20 is configured to generate a pulse signal instruction issued by the host computer 10. Generating a high-level signal with set duration when receiving an opening instruction, and controlling the NPN triode Q1 to be conducted; and generating a low-level signal with set duration after receiving the turn-off instruction, and controlling the PNP triode Q2 to be turned on.
When the IGBT gate-emitter driving voltage Vge is positive and the host computer 10 issues an on command, referring to fig. 2, the pulse signal generating device 20 generates a high level, at this time, the NPN transistor Q1 is turned on to operate, at this time, the circuit is shown by a solid line path in fig. 2, the adjustable DC regulated power supply DC1 will provide a positive voltage for driving the IGBT to turn on, at this time, the IGBT gate-emitter driving voltage Vge is positive, the value can be adjusted within a range of 0 to 20v, the control of which can be set by the user independently, or the integrated automatic control module 40 can realize automatic control when the integrated automatic control module 40 operates.
When the IGBT gate-emitter driving voltage Vge is negative, referring to fig. 3, when the host computer 10 issues a turn-off command, the pulse signal generating device 20 generates a low level, at this time, the PNP transistor Q2 is turned on, and the circuit is shown by a solid line path in fig. 3, and the adjustable DC regulated power supply DC2 will provide a negative voltage for driving the IGBT to turn off, at this time, the IGBT gate-emitter driving voltage Vge is negative, which can be adjusted within a range of-20 to 0v, and likewise, the control thereof can be set by the user independently, or can be controlled automatically by the integrated automatic control module 40 when the module is running.
Specifically, the series circuit of the diode D2 and the switch S1 is used for providing different gate resistance parameters when the driving IGBT is turned on or off. The method comprises the following steps: when the switch S1 is disconnected, gate resistances for driving the IGBT to be turned on and off are Rg1+Rg2; when the switch S1 is closed, the gate resistance for driving the IGBT to be opened is Rg1, and the gate resistance for driving the IGBT to be closed is Rg1+Rg2.
In this embodiment, the information collection module 30 integrates a precise current detection circuit, a voltage detection circuit and a temperature detection circuit, and can collect the operation data of the power module (i.e. the external IGBT with the driving parameters to be determined) in real time during operation, where the operation data includes the information such as the collector-emitter voltage, the collector current and the temperature of the IGBT, and transmit the collected data information to the integrated automatic control module 40.
In this embodiment, the integrated automatic control module 40 includes a plurality of Microprocessors (MCUs) and a Field Programmable Gate Array (FPGA), and after receiving the IGBT real-time information transmitted by the information acquisition module 30, the integrated automatic control module 40 compares each set of data with a user set value, and issues a driving parameter adjustment signal according to the comparison result:
Aiming at the received real-time data, if the conditions of overhigh voltage of a direct current bus, overhigh current of a collector and overhigh voltage between a collector and an emitter exist, under the working conditions, the IGBT runs at risk, an instruction for slowing down the switching process of the IGBT is issued, and at the moment, the integrated automatic control module 40 can automatically adjust the voltage value (reducing positive voltage) of the adjustable direct current regulated power supply DC1, the voltage value (lifting negative voltage) of the adjustable direct current regulated power supply DC2 and the driving grid resistance (increasing) to realize the slowing down switching process, so that the IGBT is ensured to run in a safe working area;
If the temperature is high, the collector-emitter voltage is low and the safety margin is large, the integrated automatic control module 40 will implement the switching process to be accelerated by automatically adjusting the voltage value of the adjustable direct current regulated power supply DC1 (raising the positive voltage), the voltage value of the adjustable direct current regulated power supply DC2 (lowering the negative voltage), and the driving gate resistance (reducing) at this time, so as to reduce the working loss.
In the application, the adjustable direct current regulated power supply DC2 and the adjustable direct current regulated power supply DC1 are programmable direct current regulated power supplies for realizing accurate voltage range setting;
Due to the typical range of IGBT drive voltages (i.e. positive and negative voltage ranges of ±20v). Therefore, in the present application, the driving voltages of the adjustable direct current regulated power supply DC2 and the adjustable direct current regulated power supply DC1 are ±20v, thereby realizing the voltage value of the IGBT gate-emitter driving voltage Vge as ±20v.
While the application has been described in terms of preferred embodiments, it will be understood by those skilled in the art that various changes and modifications can be made without departing from the scope of the application, and it is intended that the application is not limited to the specific embodiments disclosed.
Claims (3)
1. An IGBT drive configuration device, comprising:
the acquisition module is arranged on the power module and used for acquiring the operation data of the power module;
the control module is connected with the acquisition module;
The pulse signal generating device is connected with the control module;
The adjusting module comprises an adjustable power supply module, a converting circuit, a grid resistance module, an adjustable capacitor Cge and a grid-emitter resistance Rge;
The switching circuit is respectively connected with the pulse signal generating device, the adjustable power supply module and one end of the grid resistance module;
the other end of the grid resistor module is connected with one end of the adjustable capacitor Cge, and the other end of the adjustable capacitor Cge is connected with one end of the grid-emitter resistor Rge;
the conversion circuit includes: NPN transistor Q1 and PNP transistor Q2;
The junction of the emitter of the NPN triode Q1 and the emitter of the PNP triode Q2 is connected with one end of a grid resistor module, and the junction of the base of the NPN triode Q1 and the base of the PNP triode Q2 is connected with the pulse signal generating device;
the adjustable power supply module comprises an adjustable direct current stabilized power supply DC1 and an adjustable direct current stabilized power supply DC2;
the positive electrode of the adjustable direct current regulated power supply DC1 and the collector of the NPN triode Q1
The negative electrode of the adjustable direct current regulated power supply DC1 is electrically connected with the positive electrode of the adjustable direct current regulated power supply DC 2;
The negative electrode of the adjustable direct current regulated power supply DC2 is electrically connected with the collector electrode of the PNP triode Q2;
The other end of the gate-emitter resistor Rge is connected with the junction of the positive electrode of the adjustable direct current regulated power supply DC2 and the negative electrode of the adjustable direct current regulated power supply DC1 and the emitter terminal of the IGBT;
The grid resistance module comprises a switch S1, a diode D2, an adjustable resistor Rg1 and an adjustable resistor Rg2;
The switch S1 and the diode D2 are connected in series, one end of a series circuit of the switch S1 and the diode D2 is connected to one end of the adjustable resistor Rg1 and one end of the adjustable resistor Rg2, and the other end of the series circuit of the switch S1 and the diode D2 is connected to the other end of the adjustable resistor Rg 2;
One end of a series circuit of the adjustable resistor Rg1 and the adjustable resistor Rg2 is connected to the connection part of the emitter of the NPN triode Q1 and the emitter of the PNP triode Q2, and the other end of the series circuit of the adjustable resistor Rg1 and the adjustable resistor Rg2 is electrically connected with an IGBT gate terminal;
After receiving the IGBT real-time information transmitted by the acquisition module, the control module compares and calculates each group of data with a user set value, and sends a driving parameter adjustment signal according to the comparison result;
Aiming at the received real-time data, if the conditions of overhigh direct-current bus voltage, overlarge collector current and overhigh collector-emitter voltage occur, and the running of the IGBT is at risk under the working conditions, an instruction for slowing down the switching process of the IGBT is issued, and at the moment, the control module can provide a positive voltage for driving the IGBT by reducing the adjustable direct-current stabilized power supply DC1, raise the direct-current stabilized power supply DC2 to provide a negative voltage for driving the IGBT and increase the grid resistance module, so that the switching process is slowed down, and the running of the IGBT in a safe working area is ensured;
If the temperature is high and the voltage between the collector and the emitter is low and the safety margin is large, the control module can provide the positive voltage for driving the IGBT by lifting the adjustable direct current stabilized power supply DC1, reduce the negative voltage for driving the IGBT by the adjustable direct current stabilized power supply DC2, reduce the grid resistance module, accelerate the switching process and reduce the working loss.
2. The IGBT drive configuration device of claim 1 wherein the control module comprises an upper computer and an integrated automatic control module;
The integrated automatic control module is respectively connected with the acquisition module and the upper computer;
the upper computer is connected with the pulse signal generating device.
3. The IGBT drive configuration device according to claim 1, wherein the resistance value of the adjustable resistor Rg1, the resistance value of the adjustable resistor Rg2, the resistance value of the gate-emitter resistor Rge, and the capacitance value of the adjustable capacitor Cge are individually settable, respectively;
the adjustable resistor Rg1, the adjustable resistor Rg2, the gate-emitter resistor Rge, the adjustable direct current regulated power supply DC1, the adjustable direct current regulated power supply DC2 and the adjustable capacitor Cge are respectively connected with the control module.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410314181.9A CN117914295B (en) | 2024-03-19 | 2024-03-19 | IGBT driving configuration device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410314181.9A CN117914295B (en) | 2024-03-19 | 2024-03-19 | IGBT driving configuration device |
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| CN117914295A CN117914295A (en) | 2024-04-19 |
| CN117914295B true CN117914295B (en) | 2024-07-09 |
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| KR101449083B1 (en) * | 2010-05-06 | 2014-10-13 | 엘에스산전 주식회사 | Switching Gate Drive |
| CN202260995U (en) * | 2011-10-14 | 2012-05-30 | 广东易事特电源股份有限公司 | IGBT (Insulated Gate Bipolar Transistor) driving circuit |
| JP6171553B2 (en) * | 2013-05-17 | 2017-08-02 | 富士電機株式会社 | Power converter |
| JP6961944B2 (en) * | 2017-01-18 | 2021-11-05 | 富士電機株式会社 | Power semiconductor module |
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| CN116582117A (en) * | 2023-05-11 | 2023-08-11 | 湖南大学 | Gate driving method for multi-tube parallel connection of power device |
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| CN103427809A (en) * | 2012-05-21 | 2013-12-04 | 永济新时速电机电器有限责任公司 | Protective circuit of insulated gate bipolar transistor |
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