CN117895916A - Integrated BAW filter and method for manufacturing integrated BAW filter - Google Patents

Integrated BAW filter and method for manufacturing integrated BAW filter Download PDF

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Publication number
CN117895916A
CN117895916A CN202410291429.4A CN202410291429A CN117895916A CN 117895916 A CN117895916 A CN 117895916A CN 202410291429 A CN202410291429 A CN 202410291429A CN 117895916 A CN117895916 A CN 117895916A
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China
Prior art keywords
electrode layer
thickness
baw
baw filter
upper electrode
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CN202410291429.4A
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Chinese (zh)
Inventor
魏彬
邹洁
唐供宾
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Shenzhen Newsonic Technologies Co Ltd
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Shenzhen Newsonic Technologies Co Ltd
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Priority to CN202410291429.4A priority Critical patent/CN117895916A/en
Publication of CN117895916A publication Critical patent/CN117895916A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0428—Modification of the thickness of an element of an electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0435—Modification of the thickness of an element of a piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0442—Modification of the thickness of an element of a non-piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0471—Resonance frequency of a plurality of resonators at different frequencies

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

It is an object of embodiments of the present application to provide an integrated BAW filter and a method of manufacturing an integrated BAW filter. The integrated BAW filter comprises a substrate and a plurality of BAW filters integrated on the substrate; wherein each BAW filter comprises a piezoelectric layer, an upper electrode layer and a lower electrode layer, respectively, the upper electrode layer being disposed above the piezoelectric layer, and the lower electrode layer being disposed below the piezoelectric layer. The embodiment of the application has the following advantages: the method has the advantages that the plurality of BAW filters are integrated on one chip, so that the flow sheet test of the plurality of BAW filter products can be finished at one time, the efficiency is improved, the cost is saved, the development period of the filter products is shortened, and the stability of the filter devices is improved.

Description

Integrated BAW filter and method for manufacturing integrated BAW filter
Technical Field
The present invention relates to the field of semiconductors, and more particularly, to an integrated BAW filter and a method of manufacturing an integrated BAW filter.
Background
In the field of semiconductor processing, the acoustic filter has a relatively high cost performance because the acoustic filter is small in size and can be assembled on a wafer and can meet the requirements of high and low frequencies, and the acoustic filter is widely applied to mobile terminal equipment.
Currently, acoustic filters are largely divided into surface acoustic wave (Surface Acoustic Wave, SAW) filters and bulk acoustic wave (Bulk Acoustic Wave, BAW) filters. BAW filters are different from SAW filters in that acoustic waves in BAW are propagated longitudinally, i.e. in bulk acoustic wave resonators using quartz crystals as the substrate, metal sheets on the upper and lower surfaces of the quartz excite to form acoustic waves, which jump from the top surface to the bottom surface, forming standing waves. Therefore, resonator structures in BAW filters need to be completed on carrier substrates using thin film deposition and micromachining techniques.
In a scenario where a plurality of BAW filter products are required to be used, a method of manufacturing a plurality of BAW filter products and packaging the plurality of BAW filters is generally adopted based on the prior art. Based on this approach, the need to individually perform the stream slice test on the plurality of BAW filter products results in a long development period, and this approach requires the manufacture of the plurality of BAW filters separately, which is prone to resource waste.
Disclosure of Invention
It is an object of embodiments of the present application to provide an integrated BAW filter and a method of manufacturing an integrated BAW filter.
An integrated BAW filter includes a substrate and a plurality of BAW filters integrated on the substrate;
wherein each BAW filter comprises a piezoelectric layer, an upper electrode layer and a lower electrode layer, respectively, the upper electrode layer being disposed above the piezoelectric layer, and the lower electrode layer being disposed below the piezoelectric layer.
According to one embodiment, the plurality of BAW filters each have a piezoelectric layer, an upper electrode layer and/or a lower electrode layer of different thickness.
According to one embodiment, the integrated BAW filter further comprises a support layer for isolating the lower cavity of the BAW filter from the filler layer, and the filler layer is formed on the surface of the lower electrode layer.
Embodiments of the present application provide a method of manufacturing the integrated BAW filter, wherein the integrated BAW filter includes a substrate and a plurality of BAW filters integrated on the substrate, the method comprising:
forming an upper electrode layer over a temporary substrate, wherein a thickness of the upper electrode layer is a maximum value of upper electrode layer thicknesses in the plurality of BAW filters;
forming a piezoelectric layer over the upper electrode layer, wherein a thickness of the piezoelectric layer is a maximum value of thicknesses of piezoelectric layers in the plurality of BAW filters;
etching the piezoelectric layer based on the thickness of the piezoelectric layer of each of the plurality of BAW filters to form piezoelectric layers corresponding to each BAW filter;
forming a lower electrode layer on the etched piezoelectric layer, wherein the thickness of the lower electrode layer is the maximum value of the thicknesses of the lower electrode layers in the plurality of BAW filters;
etching the lower electrode layer based on the thickness of the lower electrode layer of each BAW filter to form a lower electrode layer corresponding to each BAW filter;
removing the temporary substrate;
and etching the upper electrode layer based on the thickness of the upper electrode layer of each BAW filter to form an upper electrode layer corresponding to each BAW filter.
Embodiments of the present application provide an integrated circuit comprising an integrated BAW filter according to embodiments of the present application.
An embodiment of the application provides an electronic device comprising an integrated BAW filter according to an embodiment of the application, or an integrated circuit according to an embodiment of the application.
Compared with the prior art, the embodiment of the application has the following advantages: according to the integrated BAW filter and the manufacturing method thereof, the plurality of BAW filters are integrated on the same chip, so that the flow sheet test of the plurality of BAW filter products can be completed at one time.
Drawings
Other features, objects and advantages of the present invention will become more apparent upon reading of the detailed description of non-limiting embodiments, made with reference to the accompanying drawings in which:
fig. 1 shows a schematic structural diagram of an integrated BAW filter according to an embodiment of the present application;
fig. 2 shows a flow chart of a method of manufacturing an integrated BAW filter according to an embodiment of the present application;
fig. 3 shows a schematic diagram of an exemplary structure formed during the fabrication of an integrated BAW filter according to an embodiment of the present application;
fig. 4 shows a schematic diagram of an exemplary structure formed during the fabrication of an integrated BAW filter according to an embodiment of the present application;
fig. 5 shows a schematic diagram of an exemplary structure formed during the fabrication of an integrated BAW filter according to an embodiment of the present application;
fig. 6 shows a schematic diagram of an exemplary structure formed during the fabrication of an integrated BAW filter according to an embodiment of the present application;
fig. 7 shows a schematic diagram of an exemplary structure formed during the fabrication of an integrated BAW filter according to an embodiment of the present application;
fig. 8 shows a schematic diagram of an exemplary structure formed during the fabrication of an integrated BAW filter according to an embodiment of the present application;
fig. 9 shows a schematic diagram of an exemplary structure formed during the fabrication of an integrated BAW filter according to an embodiment of the present application.
The same or similar reference numbers in the drawings refer to the same or similar parts.
Detailed Description
Before discussing exemplary embodiments in more detail, it should be mentioned that some exemplary embodiments are described as processes or methods depicted as flowcharts. Although a flowchart depicts operations as a sequential process, many of the operations can be performed in parallel, concurrently, or at the same time. Furthermore, the order of the operations may be rearranged. The process may be terminated when its operations are completed, but may have additional steps not included in the figures. The processes may correspond to methods, functions, procedures, subroutines, and the like.
Specific structural and functional details disclosed herein are merely representative and are for purposes of describing example embodiments of the present application. This application may be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.
It will be understood that, although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of example embodiments. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It should also be noted that, in some alternative implementations, the functions/acts noted may occur out of the order noted in the figures. For example, two figures shown in succession may in fact be executed substantially concurrently or the figures may sometimes be executed in the reverse order, depending upon the functionality/acts involved.
The invention is described in further detail below with reference to the accompanying drawings.
Fig. 1 shows a schematic structure of an integrated BAW filter according to an embodiment of the present application.
Wherein an integrated BAW filter according to an embodiment of the present application comprises a plurality of BAW filters, which are integrated on one chip. Fig. 1 shows a cross-section of two adjacent BAWs of a plurality of BAW filters integrated on the same chip.
Wherein the plurality of BAW filters may be integrated in a variety of arrangements, e.g., a single-row arrangement or a matrix arrangement, etc.
Alternatively, the plurality of BAW filters may be adjacent to each other, or a predetermined interval may be maintained between the plurality of BAW filters.
Referring to fig. 1, the integrated BAW filter includes a substrate 105 and a plurality of BAW filters integrated on the substrate 105.
Wherein the substrate is used for carrying a chip or other electronic device. Materials of the substrate include, but are not limited to, silicon (Si), silicon Carbide (Silicon Carbide), or aluminum oxide, etc.
Wherein each BAW filter comprises a piezoelectric layer 102, an upper electrode layer 101 and a lower electrode layer 103, respectively. The upper electrode layer 101 is disposed above the piezoelectric layer 102, and the lower electrode layer 103 is disposed below the piezoelectric layer 102.
Optionally, the plurality of BAW filters have piezoelectric layers, upper electrode layers, and/or lower electrode layers of different thicknesses, respectively.
In the embodiment of the application, the plurality of BAW filters with different thicknesses are formed by etching the electrode layers, so that the upper electrode layers and the lower electrode layers of the plurality of BAW filters have different acoustic impedances, and the plurality of BAW filters with different working frequencies are integrated on one chip.
The materials of the upper electrode layer 101 and the lower electrode layer 103 may be various metal materials having conductive properties, or may be a combination of various metal materials having conductive properties. Alternatively, the materials of the upper and lower electrode layers include, but are not limited to, molybdenum (Mo), aluminum (Al), copper (Cu), platinum (Pt), tantalum (Ta), tungsten (W), and the like.
The material of the piezoelectric layer may be various materials having piezoelectric characteristics. Alternatively, the material of the piezoelectric layer includes, but is not limited to, aluminum nitride (AlN), alN doped with rare earth elements such as scandium, erbium, lanthanum, etc., zinc oxide (ZnO), or lithium niobate (LiNbO 3).
Wherein the integrated BAW filter further comprises a support layer 104 and a filler layer.
The support layer 104 is used to block the space between the lower cavity and the filling layer of the BAW filter. The material of the support layer 104 may include various organic or inorganic materials.
Optionally, the thickness of the support layer 104 is 1 micrometer (um) to 10 um.
Wherein the filling layer is formed on the surface of the lower electrode layer 103. Materials for the fill layer include, but are not limited to, silicon dioxide doped with phosphorus or boron, silicon nitride, and the like.
Optionally, the thickness of the filling layer is 1um to 10 um.
According to the integrated BAW filter, the plurality of BAW filters are integrated on the same chip, so that the flow sheet test of the plurality of BAW filter products can be completed at one time, compared with the traditional mode of respectively manufacturing the plurality of BAW filter products and packaging the plurality of BAW filters, the efficiency is improved, the cost is saved, the development period of the filter products is shortened, and the stability of the filter device is improved.
Fig. 2 shows a flow chart of a method of manufacturing an integrated BAW filter according to an embodiment of the present application. The method comprises steps S1 to S7.
The method will be described with reference to the schematic structural diagrams shown in fig. 3 to 9.
Fig. 3 to 9 respectively show schematic diagrams of structures formed in the process of manufacturing an integrated BAW filter according to an embodiment of the present application.
The respective reference numerals in fig. 3 to 9 and their corresponding components are represented as follows:
10: a temporary substrate;
11: an upper electrode layer;
12: piezoelectric layer
13: a lower electrode layer;
14: a support layer;
15: a substrate.
Referring to fig. 2 and 3, in step S1, an upper electrode layer 11 is formed over a temporary substrate 10.
Specifically, a temporary substrate 10 is obtained, and an upper electrode layer 11 is formed over the temporary substrate 10. Wherein the material of the temporary substrate 10 includes, but is not limited to, silicon (Si), silicon carbide (SiC), aluminum oxide, or the like.
Wherein the thickness of the upper electrode layer 11 is the maximum value of the thicknesses of the lower electrode layers in the plurality of BAW filters.
Wherein the uniformity of the upper electrode layer is less than 1%.
Alternatively, the upper electrode layer 11 is deposited on the temporary substrate 10 by a chemical vapor deposition (chemical vapor deposition, CVD) process.
The material of the upper electrode layer 11 may be various metal materials having conductive properties, or may be a combination of various metal materials having conductive properties. Alternatively, the materials of the upper and lower electrode layers include, but are not limited to, molybdenum (Mo), aluminum (Al), copper (Cu), platinum (Pt), tantalum (Ta), tungsten (W), and the like.
In step S2, a piezoelectric layer 12 is formed over the upper electrode layer 11.
Wherein the thickness of the piezoelectric layer 12 is the maximum of the piezoelectric layer thicknesses in the plurality of BAW filters.
The material of the piezoelectric layer 12 may be various materials having piezoelectric characteristics. Alternatively, the material of the piezoelectric layer 12 includes, but is not limited to, aluminum nitride (AlN), alN doped with rare earth elements such as scandium, erbium, lanthanum, etc., zinc oxide (ZnO), lithium niobate (LiNbO 3), or the like.
The etch uniformity of the piezoelectric layer 12 is less than 1%.
Alternatively, the piezoelectric layer 12 is deposited on the upper electrode layer 11 by a chemical vapor deposition process.
In step S3, the piezoelectric layer 12 is etched based on the thickness of the piezoelectric layer of each of the plurality of BAW filters to form piezoelectric layers corresponding to each of the BAW filters. The etched piezoelectric layer is shown in fig. 4.
Wherein the method further comprises step S8.
In step S8, material parameter information of each of the plurality of BAW filters is acquired. Wherein the material parameter information comprises a piezoelectric layer thickness, an upper electrode layer thickness and a lower electrode layer thickness required by each of the plurality of BAW filters.
Optionally, the material information further comprises integrated region information of the BAW filter. The integration area information includes various information that can be used to indicate the location area of the BAW filter to be integrated on the temporary substrate.
Specifically, in step S3, for each BAW filter, based on the corresponding area of the BAW filter on the temporary substrate, it is determined whether a thickness etching process is required to reduce the thickness of the area of the lower electrode layer corresponding to the area, and if the thickness etching process is required, the etching thickness to be etched is further determined. And then, carrying out thickness etching treatment on the piezoelectric layer area corresponding to the area based on the determined etching thickness, so that the thickness of the piezoelectric layer area after etching treatment is the piezoelectric layer thickness of the BAW filter.
Wherein the etching uniformity of the piezoelectric layer 12 is less than 1%.
In step S4, the lower electrode layer 13 is formed on the etched piezoelectric layer 12. The lower electrode layer is formed as shown in fig. 5.
Wherein the thickness of the lower electrode layer 13 is the maximum value of the thicknesses of the lower electrode layers in the plurality of BAW filters.
The material of the lower electrode layer 13 may be various metal materials having conductive properties, or may be a combination of various metal materials having conductive properties. Alternatively, the materials of the upper and lower electrode layers include, but are not limited to, molybdenum (Mo), aluminum (Al), copper (Cu), platinum (Pt), tantalum (Ta), tungsten (W), and the like.
Wherein the uniformity of the lower electrode layer 13 is less than 1%.
Alternatively, the lower electrode layer 13 is deposited on the etched piezoelectric layer 12 by a chemical vapor deposition process.
In step S5, the lower electrode layer 13 is subjected to etching treatment based on the thickness of the lower electrode layer of each of the plurality of BAW filters to form lower electrode layers corresponding to each of the BAW filters.
Wherein the etching process includes a thickness etching process for reducing the thickness by photolithography, etching, or the like.
Specifically, in step S5, for each BAW filter, based on the corresponding area of the BAW filter on the temporary substrate, it is determined whether a thickness etching process is required to reduce the thickness of the area of the lower electrode layer corresponding to the area, and if the thickness etching process is required, the etching thickness to be etched is further determined. And then, carrying out thickness etching treatment on the lower electrode layer area corresponding to the area based on the determined etching thickness, so that the thickness of the lower electrode layer area after etching treatment is the thickness of the lower electrode layer of the BAW filter. The lower electrode layer obtained by the thickness etching treatment is shown in fig. 5.
The etching treatment further comprises a graphical etching treatment. In step S5, the method performs a patterned etching process on the bottom electrode layer 13 to form a patterned bottom electrode layer. The lower electrode layer obtained by the patterned etching treatment is shown in fig. 6.
Wherein the method employs a variety of etching processes to perform the etching process, such as a plasma etching process, a wet etching process, or a combination of both.
Wherein, the etching uniformity of the lower electrode layer is less than 1%.
In step S6, the temporary substrate 10 is removed.
Optionally, the method further comprises step S9 before step S7.
In step S9, a support layer 14 is formed between the substrate and the piezoelectric layer.
Specifically, referring to fig. 6 and 7, a substrate 15 is obtained, and a support layer 14 is formed between the substrate 15 and the piezoelectric layer 12, and the structure shown in fig. 6 is inverted after removing the temporary substrate, to form the structure shown in fig. 7.
Wherein the support layer 14 is used for isolating the lower cavity of the BAW filter from the filling layer. The material of the support layer 14 may include various organic or inorganic materials.
Optionally, the support layer 14 has a thickness of 1 micrometer (um) to 10 um.
The method according to the present embodiment further includes step S10 before step S7.
In step S10, a filling layer is formed on the surface of the etched lower electrode layer.
Wherein the material of the filling layer comprises, but is not limited to, silicon dioxide doped with phosphorus or boron, silicon nitride and the like. Optionally, the thickness of the filling layer is 1um to 10 um.
In step S7, the upper electrode layer 11 is subjected to etching treatment based on the thickness of the upper electrode layer of each of the plurality of BAW filters to form upper electrode layers corresponding to each of the BAW filters.
Specifically, in step S7, for each BAW filter, it is determined, based on the corresponding area of the BAW filter on the temporary substrate, whether a thickness etching process is required to reduce the thickness of the upper electrode layer area corresponding to the area, and if the thickness etching process is required, the etching thickness to be etched is further determined. And then, carrying out thickness etching treatment on the upper electrode layer area corresponding to the area based on the determined etching thickness, so that the thickness of the upper electrode layer area after etching treatment is the upper electrode layer thickness of the BAW filter. The upper electrode layer obtained by the thickness etching treatment is shown in fig. 8.
In step S7, the method performs a patterned etching process on the upper electrode layer 11 to form a patterned upper electrode layer. The upper electrode layer obtained by the image etching treatment is shown in fig. 9.
Wherein, the etching uniformity of the upper electrode layer 11 is less than 1%.
According to the method for manufacturing the integrated BAW filter, the plurality of BAW filters are integrated on the same chip, so that the flow sheet test of the plurality of BAW filter products can be completed at one time.
Based on the above embodiments of the present application, there is further provided an integrated circuit in another embodiment of the present application, where the integrated circuit includes the integrated BAW filter described in the above embodiments.
Based on the foregoing embodiments of the present application, another embodiment of the present application further provides an electronic device, where the electronic device includes the integrated BAW filter described in the foregoing embodiments, or the electronic device includes the integrated circuit described in the foregoing embodiments.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and are not limiting thereof; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the corresponding technical solutions.
Furthermore, it is evident that the word "comprising" does not exclude other elements or steps, and that the singular does not exclude a plurality. A plurality of units or devices stated in the embodiments of the present application may also be implemented by one unit or device in software or hardware. The terms first, second, etc. are used to denote a name, but not any particular order.

Claims (10)

1. An integrated BAW filter, the integrated BAW filter comprising a substrate and a plurality of BAW filters integrated on the substrate;
wherein each BAW filter comprises a piezoelectric layer, an upper electrode layer and a lower electrode layer, respectively, the upper electrode layer being disposed above the piezoelectric layer, and the lower electrode layer being disposed below the piezoelectric layer.
2. The integrated BAW filter of claim 1, wherein the plurality of BAW filters each have a piezoelectric layer, an upper electrode layer, and/or a lower electrode layer of different thickness.
3. The integrated BAW filter of claim 1 or 2, further comprising a support layer for isolating a lower cavity of the BAW filter from the filler layer, and the filler layer formed on a surface of the lower electrode layer.
4. A method of manufacturing an integrated BAW filter, wherein the integrated BAW filter comprises a substrate and a plurality of BAW filters integrated on the substrate, the method comprising:
forming an upper electrode layer over a temporary substrate, wherein a thickness of the upper electrode layer is a maximum value of upper electrode layer thicknesses in the plurality of BAW filters;
forming a piezoelectric layer over the upper electrode layer, wherein a thickness of the piezoelectric layer is a maximum value of thicknesses of piezoelectric layers in the plurality of BAW filters;
etching the piezoelectric layer based on the thickness of the piezoelectric layer of each of the plurality of BAW filters to form piezoelectric layers corresponding to each BAW filter;
forming a lower electrode layer on the etched piezoelectric layer, wherein the thickness of the lower electrode layer is the maximum value of the thicknesses of the lower electrode layers in the plurality of BAW filters;
etching the lower electrode layer based on the thickness of the lower electrode layer of each BAW filter to form a lower electrode layer corresponding to each BAW filter;
removing the temporary substrate;
and etching the upper electrode layer based on the thickness of the upper electrode layer of each BAW filter to form an upper electrode layer corresponding to each BAW filter.
5. The method according to claim 4, wherein the method further comprises:
and acquiring material parameter information of each of the plurality of BAW filters, wherein the material parameter information comprises a piezoelectric layer thickness, an upper electrode layer thickness and a lower electrode layer thickness required by each of the plurality of BAW filters.
6. The method of claim 4 or 5, wherein etching the piezoelectric layer based on the thickness of the piezoelectric layer of each of the plurality of BAW filters to form the piezoelectric layer corresponding to each BAW filter comprises:
for each BAW filter, determining whether thickness etching treatment is needed to reduce the thickness of a lower electrode layer region corresponding to a corresponding region based on the corresponding region of the BAW filter on the temporary substrate;
if thickness etching treatment is needed, further determining the etching thickness to be etched;
and carrying out thickness etching treatment on the piezoelectric layer region corresponding to the region based on the determined etching thickness, so that the thickness of the etched piezoelectric layer region is the piezoelectric layer thickness of the BAW filter.
7. The method of claim 4 or 5, wherein etching the upper electrode layer based on the respective upper electrode layer thicknesses of the plurality of BAW filters to form upper electrode layers corresponding to the respective BAW filters comprises:
for each BAW filter, determining whether thickness etching treatment is needed to reduce the thickness of an upper electrode layer region corresponding to a corresponding region of the BAW filter on the temporary substrate based on the corresponding region of the BAW filter;
if thickness etching treatment is needed, further determining the etching thickness to be etched;
and carrying out thickness etching treatment on the upper electrode layer region corresponding to the region based on the determined etching thickness, so that the thickness of the upper electrode layer region after etching treatment is the upper electrode layer thickness of the BAW filter.
8. The method of claim 4 or 5, wherein etching the bottom electrode layer based on the respective bottom electrode layer thicknesses of the plurality of BAW filters to form a bottom electrode layer corresponding to the respective BAW filters comprises:
for each BAW filter, determining whether thickness etching treatment is needed to reduce the thickness of a lower electrode layer region corresponding to a corresponding region of the BAW filter on the temporary substrate based on the corresponding region of the BAW filter;
if thickness etching treatment is needed, further determining the etching thickness to be etched;
and carrying out thickness etching treatment on the lower electrode layer region corresponding to the region based on the determined etching thickness, so that the thickness of the lower electrode layer region after etching treatment is the thickness of the lower electrode layer of the BAW filter.
9. An integrated circuit, characterized in that it comprises an integrated BAW filter as claimed in any one of claims 1 to 3.
10. An electronic device comprising the integrated BAW filter of any one of claims 1 to 3, or the integrated circuit of claim 9.
CN202410291429.4A 2024-03-14 2024-03-14 Integrated BAW filter and method for manufacturing integrated BAW filter Pending CN117895916A (en)

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Publication number Priority date Publication date Assignee Title
CN112039476A (en) * 2020-03-17 2020-12-04 中芯集成电路（宁波）有限公司 Film bulk acoustic resonator, manufacturing method thereof, filter and electronic equipment
WO2022052915A1 (en) * 2020-09-09 2022-03-17 诺思(天津)微系统有限责任公司 Filter assembly and manufacturing method therefor, and electronic device
CN115694387A (en) * 2022-10-26 2023-02-03 河源市艾佛光通科技有限公司 Bulk acoustic wave filter and manufacturing method thereof
CN117478100A (en) * 2023-12-25 2024-01-30 深圳新声半导体有限公司 Multiplexer with resonant cavity acoustic wave filter and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112039476A (en) * 2020-03-17 2020-12-04 中芯集成电路（宁波）有限公司 Film bulk acoustic resonator, manufacturing method thereof, filter and electronic equipment
WO2022052915A1 (en) * 2020-09-09 2022-03-17 诺思(天津)微系统有限责任公司 Filter assembly and manufacturing method therefor, and electronic device
CN115694387A (en) * 2022-10-26 2023-02-03 河源市艾佛光通科技有限公司 Bulk acoustic wave filter and manufacturing method thereof
CN117478100A (en) * 2023-12-25 2024-01-30 深圳新声半导体有限公司 Multiplexer with resonant cavity acoustic wave filter and preparation method thereof

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