CN117878224A - LED packaging structure, packaging method and LED without fluorescent powder - Google Patents
LED packaging structure, packaging method and LED without fluorescent powder Download PDFInfo
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- CN117878224A CN117878224A CN202410277238.2A CN202410277238A CN117878224A CN 117878224 A CN117878224 A CN 117878224A CN 202410277238 A CN202410277238 A CN 202410277238A CN 117878224 A CN117878224 A CN 117878224A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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Abstract
The invention relates to a light-emitting diode, in particular to an LED packaging structure, a packaging method and an LED without fluorescent powder. In the invention, the packaging adhesive layer with high refractive index and top spherical surface and side plane is adopted for packaging, so that the diameter of the top spherical surface can be increased, the problem of total reflection in the light emitting process of the LED chip is solved, and the primary light extraction efficiency is improved; the high-reflectivity reflecting layer is utilized to reduce light absorption and improve secondary light extraction efficiency; and integrating a zener diode to realize LED package voltage stabilization and electrostatic breakdown prevention.
Description
Technical Field
The invention relates to a light emitting diode (Light Emitting Diodes, LED), in particular to an LED packaging structure, a packaging method and an LED without fluorescent powder.
Background
The LED light source without fluorescent powder adopts LED chips with various wavelengths to mix and emit light, so as to realize illumination. As shown in fig. 1, the LED light source without phosphor powder generally comprises a package substrate, a chip and a package adhesive layer, according to the snell's law, the critical angle of the light emitted from the chip with higher refractive index to the package adhesive layer with lower refractive index is smaller, total reflection occurs at the interface between the chip and the package adhesive layer, and secondly, the light emitted from the package adhesive layer to the air, total reflection also occurs at the interface between the package adhesive layer and the air, resulting in lower light extraction efficiency compared with the conventional phosphor powder LED package. In addition, the LED light source without fluorescent powder may introduce static electricity in the middle-stream device packaging process and the later use process, so that static breakdown is caused, and the reliability of the LED product without fluorescent powder is seriously affected.
Disclosure of Invention
Based on the above, the invention provides an LED packaging structure, a packaging method and an LED without fluorescent powder, which at least solve one problem in the prior art.
In a first aspect, the present invention provides an LED package structure, comprising:
packaging a substrate;
an LED chip bonded on the package substrate; and
a packaging adhesive layer covering the LED chip;
wherein the refractive index n of the encapsulation adhesive layer 0 1.5 to 2.0; the packaging adhesive layer is provided with a spherical surface at the top and at least four planes at the sidesThe sphere center of the sphere of the packaging adhesive layer is positioned on the top surface of the packaging substrate, and the projected area S of the sphere of the packaging adhesive layer on the packaging substrate 1 Less than or equal to the area S of the packaging substrate 2 The maximum width d of the projection of the spherical surface of the packaging adhesive layer on the packaging substrate 1 Greater than the minimum width d of the package substrate 0 And is less than or equal to the maximum width d of the package substrate 2 。
The prior art packaging adhesive layer only has a spherical surface at the top, and has no lateral plane, and the diameter of the spherical surface at the top is limited by the size of the packaging substrate. In the invention, the shape and the size of the packaging adhesive layer are improved, so that the diameter of the spherical surface of the packaging adhesive layer can be set larger than that of the same packaging substrate, thereby reducing the total reflection of light rays emitted by the LED chip at the interface between the spherical surface of the packaging adhesive layer and air, and improving the light extraction efficiency.
In a second aspect, the present invention provides an LED packaging method, comprising the steps of:
providing a packaging substrate;
bonding (Bonding) an LED chip on the packaging substrate through a die Bonding layer;
manufacturing a packaging adhesive layer covering the LED chip by adopting a primary mold top (Molding) process;
wherein the refractive index n of the encapsulation adhesive layer 0 1.5 to 2.0; the packaging adhesive layer is provided with a spherical surface at the top and at least four lateral planes, the spherical center of the spherical surface of the packaging adhesive layer is positioned on the top surface of the packaging substrate, and the projected area S of the spherical surface of the packaging adhesive layer on the packaging substrate 1 Less than or equal to the area S of the packaging substrate 2 The maximum width d of the projection of the spherical surface of the packaging adhesive layer on the packaging substrate 1 Greater than the minimum width d of the package substrate 0 And is less than or equal to the maximum width d of the package substrate 2 。
In a third aspect, the present invention provides a phosphor-free LED comprising:
a package substrate having a circuit;
the LED chip is bonded on the packaging substrate through the die bonding layer and is connected with a circuit of the packaging substrate through a lead;
the zener diode is bonded on the packaging substrate through the die bonding layer and is connected with a circuit of the packaging substrate through a lead;
the reflecting layer is arranged in the region where the top surface of the packaging substrate is complementary with the LED chip; and
a packaging adhesive layer covering the LED chip and the reflecting layer;
wherein the refractive index n of the encapsulation adhesive layer 0 1.5 to 2.0; the packaging adhesive layer is provided with a spherical surface at the top and at least four lateral planes, the spherical center of the spherical surface of the packaging adhesive layer is positioned on the top surface of the packaging substrate, and the projected area S of the spherical surface of the packaging adhesive layer on the packaging substrate 1 Less than or equal to the area S of the packaging substrate 2 The maximum width d of the projection of the spherical surface of the packaging adhesive layer on the packaging substrate 1 Greater than the minimum width d of the package substrate 0 And is less than or equal to the maximum width d of the package substrate 2 。
Due to the adoption of the technical scheme, the embodiment of the invention has at least the following beneficial effects: the packaging adhesive layer adopts a high refractive index adhesive layer, so that the problem of total reflection in the process that light rays are emitted from a chip with higher refractive index to the packaging adhesive layer with lower refractive index is solved, and the primary light extraction efficiency is improved; the packaging adhesive layer with the top spherical surface and the side plane is adopted for packaging, so that the diameter of the top spherical surface can be increased, the problem of total reflection in the process that the emergent light of the LED chip is emergent to the air from the packaging adhesive layer is solved, and the primary light extraction efficiency is further improved; the high-reflectivity reflecting layer is utilized to reduce light absorption and improve secondary light extraction efficiency; and integrating a zener diode to realize LED package voltage stabilization and electrostatic breakdown prevention.
Drawings
FIG. 1 is a schematic diagram of total reflection occurring in an LED light source without phosphor.
Fig. 2 is a schematic view showing light extraction of the point light source chip (a) and the surface light source chip (b).
Fig. 3 is a schematic cross-sectional front view of an LED without phosphor in example 1 of the present invention.
Fig. 4 is a schematic distribution diagram of four LED chips and zener diodes in embodiment 1 of the present invention.
Fig. 5 is a schematic diagram of an LED circuit without phosphor in embodiment 1 of the present invention.
Fig. 6 is a schematic diagram showing the relationship between the size of the encapsulation layer and the size of the encapsulation substrate in embodiment 1 of the present invention.
Fig. 7 is a schematic diagram showing the dimensional relationship between the encapsulation adhesive layer (a) in the prior art, the encapsulation adhesive layer (b) and the encapsulation substrate in embodiment 1 of the present invention.
FIG. 8 is a spectrum of LED synthesis without phosphor in example 1 of the present invention.
Fig. 9 is a schematic cross-sectional front view of an LED without phosphor in example 2 of the present invention.
Fig. 10 is a schematic diagram showing the relationship between the size of the encapsulation layer and the size of the encapsulation substrate in embodiment 2 of the present invention.
FIG. 11 is a spectrum of LED synthesis without phosphor in example 2 of the present invention.
Fig. 12 is a schematic cross-sectional front view of an LED without phosphor in example 3 of the present invention.
Fig. 13 is a schematic distribution diagram of two LED chips and a zener diode in embodiment 3 of the present invention.
FIG. 14 is a spectrum of LED synthesis without phosphor in example 3 of the present invention.
Fig. 15 is a schematic cross-sectional front view of an LED without phosphor in example 4 of the present invention.
Fig. 16 is a schematic diagram showing the relationship between the size of the encapsulation layer and the size of the encapsulation substrate in embodiment 4 of the present invention.
Fig. 17 is a photograph (top view) of an LED without phosphor in example 4 of the present invention.
Fig. 18 is a photograph (side view) of an LED without phosphor in example 4 of the present invention.
FIG. 19 is a spectrum of LED synthesis without phosphor in example 4 of the present invention.
FIG. 20 is a spectrum of LED synthesis without phosphor in example 5 of the present invention.
Fig. 21 is a schematic cross-sectional elevation view of an LED without phosphor of comparative example 1.
Fig. 22 is a photograph (top view) of the LED without the phosphor of comparative example 1.
Fig. 23 is a photograph (side view) of the LED without the phosphor in comparative example 1.
Detailed Description
The following is a clear and complete description of the conception and technical effects produced thereby to fully illustrate the objects, aspects, and effects of the present invention.
As shown in fig. 1, in the process that light is emitted from a chip with a higher refractive index to a packaging adhesive layer with a lower refractive index, total reflection occurs at the interface between the chip and the packaging adhesive layer, so that the light extraction efficiency is reduced. As shown in fig. 2 (a), when the LED chip is a point light source with respect to the spherical cap lens (i.e., the encapsulation adhesive layer), the light emitted from the LED chip can completely exit into the air through the spherical cap lens. However, as shown in fig. 2 (b), when the LED chip is a large area light source with respect to the cap lens, a part of light is totally reflected at the interface between the cap lens and air, reducing light extraction efficiency. Also, during LED production, static electricity may cause device failure, with lower reliability. Accordingly, the present invention provides an LED package structure, a packaging method, and an LED without phosphor, which at least solves one problem in the prior art.
In a first aspect, the present invention provides an LED package structure, comprising:
packaging a substrate;
an LED chip bonded on the package substrate; and
a packaging adhesive layer covering the LED chip;
wherein the refractive index n of the encapsulation adhesive layer 0 1.5 to 2.0; the packaging adhesive layer is provided with a spherical surface at the top and at least four lateral planes, the spherical center of the spherical surface of the packaging adhesive layer is positioned on the top surface of the packaging substrate, and the projected area S of the spherical surface of the packaging adhesive layer on the packaging substrate 1 Less than or equal to the area S of the packaging substrate 2 The maximum width d of the projection of the spherical surface of the packaging adhesive layer on the packaging substrate 1 Larger than the package baseMinimum width d of plate 0 And is less than or equal to the maximum width d of the package substrate 2 。
The packaging adhesive layer is a packaging adhesive layer with high refractive index. According to Snell's law, light is transmitted by a chip of relatively high refractive index (e.g., n GaN =2.3-2.5，n AlGaInP =3-3.5) to be emitted to the packaging adhesive layer (n)<1.5 The optical critical angle is smaller, total reflection can occur at the interface of the chip and the packaging adhesive layer, so that the light extraction efficiency is lower, and therefore, the packaging adhesive layer with high refractive index (n=1.5-2.0) is introduced, the total reflection of light rays in the process of exiting from the chip with higher refractive index to the packaging adhesive layer with lower refractive index is reduced, and the primary light extraction efficiency is improved.
The package substrate is well known to those skilled in the art and may have circuitry disposed thereon. The upward surface of the packaging substrate is a top surface when the packaging substrate is horizontally placed, and the top surface of the packaging substrate is perpendicular to the planes of at least four sides of the packaging adhesive layer. The projection refers to a projection perpendicular to the top surface of the package substrate. Compared with a packaging adhesive layer without side planes, the diameter of the spherical surface of the top of the packaging adhesive layer with at least four side planes is larger, so that total reflection of light rays emitted by the LED chip at the interface of the spherical surface of the packaging adhesive layer and air is reduced, and primary light extraction efficiency is further improved.
In some preferred embodiments, the LED chip is an LED chip of a surface light source. The encapsulation adhesive layer is very beneficial to improving the light extraction efficiency of the LED chip of the area light source, and for the same encapsulation substrate, the encapsulation adhesive layer with the spherical surface at the top and at least four planes at the sides can reduce the total reflection at the interface between the spherical surface of the encapsulation adhesive layer and the air. Particularly, when the area of the packaging substrate is smaller, the packaging adhesive layer improves the light extraction efficiency of the LED chip of the surface light source obviously. More preferably, the package substrate has an area of 4-100 mm 2 For example 4 mm 2 、9 mm 2 、16 mm 2 、25 mm 2 、36 mm 2 、49 mm 2 、10 mm 2 、20 mm 2 、30 mm 2 、80 mm 2 、100 mm 2 。
In some preferred embodiments, the package substrate has a rectangular top surface and four planar sides, the encapsulation glue layer has a top spherical surface and four lateral planar surfaces, and the four lateral planar surfaces of the encapsulation glue layer are coplanar with the four planar sides of the package substrate, respectively. In this case, the package substrate has a flat square or rectangular parallelepiped shape, and a rectangular top surface; the planes of the four sides of the packaging adhesive layer are respectively parallel and level with the four plane sides of the cube or the cuboid. In this way, the volume of the LED packaging structure can be reduced as much as possible, and the diameter of the spherical surface at the top of the packaging adhesive layer can be relatively increased.
In some preferred embodiments, the package substrate has a square top surface and four planar sides, the encapsulation glue layer has a top spherical surface and four lateral planes, and the four lateral planes of the encapsulation glue layer are coplanar with the four planar sides of the package substrate, respectively. The package substrate may be a flat cuboid of equal length and width, for example 5 a mm a width 5 a mm a height (thickness) 0.7 a mm a.
In some preferred embodiments, a periodic or aperiodic microstructure array is arranged on the spherical surface at the top of the packaging adhesive layer, and a periodic or aperiodic microstructure array is arranged on the plane beside the packaging adhesive layer. The microstructure array on the spherical surface at the top of the packaging adhesive layer can enlarge the light emitting surface, so that the light extraction efficiency is further improved; the microstructure array on the plane beside the packaging adhesive layer can reduce total reflection generated by partial light rays emitted to four vertical planes, and further improves the light extraction efficiency. The microstructures in the microstructure array may be spherical, saw tooth, etc. of small size.
In a second aspect, the present invention provides an LED packaging method, comprising the steps of:
providing a packaging substrate;
bonding (Bonding) an LED chip on the packaging substrate through a die Bonding layer;
manufacturing a packaging adhesive layer covering the LED chip by adopting a primary mold top (Molding) process;
wherein the refractive index n of the encapsulation adhesive layer 0 1.5 to 2.0; the packaging adhesive layer is provided with a spherical surface at the top and at least four lateral planes, the spherical center of the spherical surface of the packaging adhesive layer is positioned on the top surface of the packaging substrate, and the projected area S of the spherical surface of the packaging adhesive layer on the packaging substrate 1 Less than or equal to the area S of the top surface of the packaging substrate 2 The maximum width d of the projection of the spherical surface of the packaging adhesive layer on the packaging substrate 1 Greater than the minimum width d of the package substrate 0 And is less than or equal to the maximum width d of the package substrate 2 。
Both the bonding and the primary die-top process are well known to those skilled in the art. The primary mold top process adopts a mold to form the encapsulation adhesive layer with a specific shape and size, the encapsulation adhesive layer is solidified by heating, and then the mold is removed to obtain the encapsulation adhesive layer.
In a third aspect, the present invention provides a phosphor-free LED comprising:
a package substrate having a circuit;
the LED chip is bonded on the packaging substrate through the die bonding layer and is connected with a circuit of the packaging substrate through a lead;
the zener diode is bonded on the packaging substrate through the die bonding layer and is connected with a circuit of the packaging substrate through a lead;
the reflecting layer is arranged in the region where the top surface of the packaging substrate is complementary with the LED chip; and
a packaging adhesive layer covering the LED chip and the reflecting layer;
wherein the refractive index n of the encapsulation adhesive layer 0 1.5-2.0, the packaging adhesive layer has a top sphere and at least four lateral planes, the sphere center of the sphere of the packaging adhesive layer is positioned on the top surface of the packaging substrate, and the projected area S of the sphere of the packaging adhesive layer on the packaging substrate 1 Less than or equal to the area S of the packaging substrate 2 The maximum width d of the projection of the spherical surface of the packaging adhesive layer on the packaging substrate 1 Is larger than what is neededMinimum width d of the package substrate 0 And is less than or equal to the maximum width d of the package substrate 2 。
Because static electricity can be introduced in the device packaging process and the later use process, in the LED without fluorescent powder, an LED chip and a zener diode are integrated in the structure of the packaged device, voltage stabilization of a circuit is realized, static breakdown is prevented, and the reliability of a light source is improved.
In some preferred embodiments, the number of LED chips is 1 to 20. More preferably, the LED chip is a red LED chip, a yellow LED chip, a green LED chip or a blue LED chip, the red LED chip may be a red LED chip with a high light efficiency vertical structure prepared by an AlGaInP material system, the yellow LED chip may be a yellow LED chip with a high light efficiency vertical structure prepared by an AlGaInN material system, the green LED chip may be a green LED chip with a high light efficiency vertical structure prepared by an AlGaInN material system, and the blue LED chip may be a blue LED chip with a high light efficiency vertical structure prepared by an AlGaInN material system. For example, the LED chips are composed of 1 to 10 of the red LED chips, 1 to 10 of the yellow LED chips, 1 to 10 of the green LED chips, and 1 to 10 of the blue LED chips. The dominant wavelength of the red light LED chip ranges from 610nm to 630nm, the dominant wavelength of the yellow light LED chip ranges from 550nm to 590nm, the dominant wavelength of the green light LED chip ranges from 510nm to 549nm, and the dominant wavelength of the blue light LED chip ranges from 450nm to 480nm. When the number of the LED chips is more than or equal to 2, a plurality of LED chips are connected in parallel, in series or in a series-parallel combination.
In some preferred embodiments, the materials of the encapsulation glue layer are all high light transmittance materials, preferably materials with a light transmittance of 99% or more. More preferably, the material of the encapsulation adhesive layer may be one or more of high light transmittance epoxy resin, silica gel and polyurethane.
In some preferred embodiments, the thickness D of the reflective layer 0 Thickness D of die bonding layer 1 Thickness D of LED chip 2 And thickness D of zener diode 3 Is related to D 1 +D 3 ＜D 0 ≤D 1 +D 2 . Therefore, the reflectivity of the surface of the packaging substrate is improved while the light emitted by the LED chip is not blocked, and in addition, the surface of the zener diode is covered by the reflecting layer, so that the light absorption of the zener diode is avoided, and the total reflection of the packaging adhesive layer and an air interface or the secondary light extraction of Fresnel reflection rays are realized.
In some preferred embodiments, the reflective layer is a high-reflectivity diffuse reflective layer with a reflectivity of 95% or more, and the material may be barium sulfate, titanium dioxide (TiO 2 ) Nanoparticle doped silica gel, titania (TiO 2 ) Nanoparticle doped polyurethanes, titanium dioxide (TiO 2 ) One or more of the nanoparticle doped epoxy resins.
Some exemplary embodiments are described below.
Example 1
As shown in fig. 3, in embodiment 1, the phosphor-free LED includes four LED chips 1, a package substrate 2, a die attach layer 3, leads 4, a zener diode 5, a reflective layer 6, and a package adhesive layer 7; four LED chips 1 are respectively bonded on the packaging substrate 2 through the die bonding layers 3, and electrodes on the upper surface of each LED chip 1 are fixedly connected with a circuit on the packaging substrate 2 through leads 4; the zener diode 5 is bonded on the packaging substrate 2 through the die bonding layer 3, and an electrode on the upper surface of the zener diode 5 is fixedly connected with a circuit on the packaging substrate 2 through a lead 4; a reflecting layer 6 is arranged on the surface of the packaging substrate 2 in a region complementary to the LED chip 1, and the reflecting layer 6 covers the surface of the zener diode 5; the packaging substrate 2 is provided with a packaging adhesive layer 7, and the packaging adhesive layer 7 seals the LED chip 1, the die bonding layer 3, the lead 4, the zener diode 5 and the reflecting layer 6 on the packaging substrate 2. The encapsulation glue layer 7 may be referred to as a large spherical cap lens having a spherical surface at the top and four lateral vertical planes, wherein the spherical surface is provided with a periodic annular micro-structure array 7a and the four vertical planes are provided with a periodic micro-structure array 7b. The material of the packaging adhesive layer 7 is silica gel, and the light transmittance is high>99%, refractive index n 0 1.54. The reflective layer 6 is a high-reflectivity diffuse reflective layer, and the material of the reflective layer 6 is high-concentration titanium dioxide (TiO 2 ) Doped silica gel having a reflectance of 99%. The reflecting layer 6Thickness D 0 =210 μm and thickness D of die attach layer 3 1 Thickness D of LED chip 1 =20 μm 2 Thickness D of zener diode 5=190 μm 3 The geometric relationship of =110 μm is D 1 +D 3 ＜D 0 =D 1 +D 2 。
In order to better explain the distribution of the four LED chips and the zener diode in the embodiment 1, as shown in fig. 4, the four LED chips 1 are a red LED chip 1R with a high light efficiency vertical structure prepared by two AlGaInP material systems and a yellow LED chip 1Y with a high light efficiency vertical structure prepared by two AlGaInN material systems; wherein the dominant wavelength of the red LED chip 1R is 620nm, and the dominant wavelength of the yellow LED chip 1Y is 560nm. The circuit connection mode of the four LED chips and the zener diode is shown in fig. 5, and after one red LED chip 1R and one yellow LED chip 1Y are connected in series, the four LED chips are connected in parallel with the other red LED chip 1R and the other yellow LED chip 1Y, and single constant current driving is adopted; the zener diode 5 is connected in parallel with the LED chip 1.
In order to better explain the dimensional relationship between the encapsulation adhesive layer 7 and the encapsulation substrate 2 in embodiment 1, as shown in fig. 6, the top surface of the encapsulation substrate 2 is square, the sphere center of the sphere of the encapsulation adhesive layer 7 is located on the top surface of the encapsulation substrate 2, and the maximum width d of the projection of the sphere of the encapsulation adhesive layer 7 on the encapsulation substrate 2 1 =5.7 mm, minimum width (side length) d of package substrate 2 0 Maximum width d of package substrate 2 =5 mm 2 Equal to the length of the diagonal of the package substrate 2, i.e. d 0 <d 1 <d 2 The method comprises the steps of carrying out a first treatment on the surface of the The four vertical planes of the packaging adhesive layer 7 are coplanar with the side wall of the packaging substrate 2; it is calculated that the projected area S of the spherical surface of the encapsulation adhesive layer 7 on the encapsulation substrate 2 1 Less than the area S of the package substrate 2 2 S, i.e 1 <S 2 。
The phosphor-free LED of example 1 can be prepared as follows:
a: preparing a plurality of red light LED chips 1R with dominant wavelength of 620nm and yellow light LED chips 1Y with dominant wavelength of 560nm, bonding a plurality of LED chips 1 placed at intervals on the packaging substrate 2 through the die bonding layer 3, and realizing the electric connection between the lower electrode of the LED chips 1 and the packaging substrate 2;
b: preparing a zener diode 5, bonding the zener diode 5 on the packaging substrate 2 through the die bonding layer 3, and realizing the electrical connection between the lower electrode of the zener diode 5 and the packaging substrate 2;
c: the electrode on the upper surface of the LED chip 1 is connected with a circuit on the packaging substrate 2 through a lead 4 by adopting a lead bonding process, so that the electrode on the upper surface of the LED chip 1 is electrically connected with the packaging substrate 2;
d: the electrode on the upper surface of the zener diode 5 is connected with the circuit on the packaging substrate 2 through a lead wire by adopting a wire bonding process, so that the electrode on the upper surface of the zener diode 5 is electrically connected with the packaging substrate;
e: coating a reflecting layer 6 on the surface of the packaging substrate 2 and the complementary area of the LED chip 1 by adopting a spot coating process;
f: and manufacturing the packaging adhesive layer 7 on the packaging substrate 2 by adopting a primary mold top process, wherein a periodic microstructure array is manufactured on the surface of a mold, preparing the packaging adhesive layer 7 with the microstructure array on the surface through mold imprinting, realizing the solidification of the packaging adhesive layer 7 through heating, and removing the mold to obtain a finished product.
Here, (b) in fig. 7 is a graph of the relation between the encapsulation layer 7 and the encapsulation substrate 2, and since the encapsulation layer (spherical cap lens) shown in (a) in fig. 7 cannot be infinitely increased due to the limitation of the size and cost of the encapsulation substrate, the encapsulation layer 7 (large spherical cap lens) composed of a spherical surface and four vertical planes is obtained by cutting out the encapsulation layer beyond the encapsulation substrate 2 as shown in (b) in fig. 7.
As shown in fig. 8, the synthesized spectrum shows that the LED light source without phosphor of example 1 has a color temperature of 1900K and a color rendering index Ra of 71. The light efficiency of the phosphor-free LED of example 1 was 121.47 lm/W as tested by the integrating sphere method (GB/T24824-2009).
Example 2
Example 2 is substantially the same as example 1 except that:
as shown in fig. 9, the phosphor-free LED includes four LED chips 1, a package substrate 2, a die attach layer 3, leads 4, a zener diode 5, a reflective layer 6, and a package glue layer 7; in four LED chips 1The dominant wavelength of the yellow LED chip is 550nm, and the dominant wavelength of the red LED chip is 620nm; thickness D of the reflective layer 6 0 =180 μm and thickness D of die attach layer 3 1 Thickness D of LED chip 1 =20 μm 2 Thickness D of zener diode 5=190 μm 3 The geometric relationship of =110 μm is D 1 +D 3 ＜D 0 ＜D 1 +D 2 The method comprises the steps of carrying out a first treatment on the surface of the The material of the encapsulation adhesive layer 7 is epoxy resin, and the light transmittance is high>99%, refractive index n 0 1.8;
as shown in fig. 10, the top surface of the package substrate 2 is square, the sphere center of the sphere of the package adhesive layer 7 is located on the top surface of the package substrate 2, and the maximum width d of the projection of the sphere of the package adhesive layer 7 on the package substrate 2 1 =7.071 mm, minimum width (side length) d of package substrate 2 0 =5 mm maximum width d of package substrate 2 2 =7.071 mm, i.e. d 0 <d 1 = d 2 The method comprises the steps of carrying out a first treatment on the surface of the The four vertical planes of the packaging adhesive layer 7 are coplanar with the side wall of the packaging substrate 2; it is calculated that the projected area S of the spherical surface of the encapsulation adhesive layer 7 on the encapsulation substrate 2 1 Is equal to the area S of the package substrate 2 2 S, i.e 1 = S 2 。
As shown in fig. 11, the synthesized spectrum shows that the LED light source without phosphor of example 2 has a color temperature of 1889K and a color rendering index Ra of 83.
Example 3
Example 3 is substantially the same as example 1 except that:
as shown in fig. 12 and 13, the phosphor-free LED includes two LED chips 1, a package substrate 2, a die attach layer 3, leads 4, a zener diode 5, a reflective layer 6, and a package adhesive layer 7; of the two LED chips 1, one yellow LED chip 1Y with dominant wavelength of 560nm and the other red LED chip 1R with dominant wavelength of 630 nm; the material of the encapsulation adhesive layer 7 is epoxy resin, and the light transmittance is high>99%, refractive index n 0 Is 2; the spherical surface of the packaging adhesive layer 7 is free of a microstructure array, and the microstructure array is arranged on four vertical planes of the packaging adhesive layer 7.
As shown in fig. 14, the synthesized spectrum shows that the LED light source without phosphor of example 3 has a color temperature of 2044K and a color rendering index Ra of 74.
Example 4
Example 4 is substantially the same as example 1 except that:
as shown in fig. 15, the phosphor-free LED includes four LED chips 1, a package substrate 2, a die attach layer 3, leads 4, a zener diode 5, a reflective layer 6, and a package glue layer 7; the spherical surface and four vertical planes of the packaging adhesive layer 7 are free of microstructure arrays; refractive index n of encapsulation adhesive layer 0 1.54;
as shown in fig. 16, the top surface of the package substrate 2 is square, and the maximum width d of the projection of the spherical surface of the package adhesive layer 7 on the package substrate 2 1 =6 mm, the minimum width (side length) d of the package substrate 2 0 =5 mm maximum width d of package substrate 2 2 Equal to the length of the diagonal of the package substrate 2, i.e. d 0 <d 1 <d 2 The method comprises the steps of carrying out a first treatment on the surface of the The four vertical planes of the packaging adhesive layer 7 are coplanar with the side wall of the packaging substrate 2; it is calculated that the projected area S of the spherical surface of the encapsulation adhesive layer 7 on the encapsulation substrate 2 1 Less than the area S of the package substrate 2 2 S, i.e 1 <S 2 。
Fig. 17 and 18 are photographs of the LED without the phosphor of example 4. As shown in fig. 19, the synthesized spectrum shows that the LED light source without phosphor of example 4 has a color temperature of 1911K and a color rendering index Ra of 70. The light efficiency of the phosphor-free LED of example 4 was 120.93 lm/W as tested by the integrating sphere method (GB/T24824-2009).
Example 5
Example 5 is substantially the same as example 1 except that:
the LED chips without fluorescent powder are a red LED chip with a dominant wavelength of 620nm, a yellow LED chip with a dominant wavelength of 560nm, a green LED chip with a dominant wavelength of 520nm and a blue LED chip with a dominant wavelength of 460nm, and the four chips are connected in parallel and driven by four paths of constant currents.
As shown in fig. 20, the synthesized spectrum shows that the LED light source without phosphor of example 5 has a color temperature of 3951K and a color rendering index Ra of 94. The light efficiency of the phosphor-free LED of example 5 was 137.97 lm/W as tested by the integrating sphere method (GB/T24824-2009).
Example 6
Example 6 is substantially the same as example 1 except that:
refractive index n of encapsulation adhesive layer 0 1.41, and the top surface of the package substrate is not provided with a reflective layer.
The light efficiency of the phosphor-free LED of example 6 was 113.45 lm/W as tested by the integrating sphere method (GB/T24824-2009).
Example 7
Example 7 is substantially the same as example 1 except that:
refractive index n of encapsulation adhesive layer 0 1.41, the spherical surface at the top of the packaging adhesive layer and the vertical planes at the four sides are not provided with microstructure arrays, and the top surface of the packaging substrate is not provided with a reflecting layer.
The light efficiency of the phosphor-free LED of example 7 was 112.88 lm/W as tested by the integrating sphere method (GB/T24824-2009).
Example 8
Example 8 is substantially the same as example 1 except that:
the packaging adhesive layer is a traditional spherical cap lens, and the radius R of the packaging adhesive layer is 0 Refractive index n of the encapsulation layer =4.6mm 0 1.41.
The light efficiency of the phosphor-free LED of example 8 was 113.41 lm/W as tested by the integrating sphere method (GB/T24824-2009).
Example 9
Example 9 is substantially the same as example 1 except that:
the packaging adhesive layer is a traditional spherical cap lens, and the radius R of the packaging adhesive layer is 0 =4.6 mm, and the package substrate top surface is not provided with a reflective layer.
The light efficiency of the phosphor-free LED of example 9 was 116.82 lm/W as tested by the integrating sphere method (GB/T24824-2009).
Comparative example 1
Comparative example 1 is substantially the same as example 1 except that:
as shown in fig. 21, the phosphor-free LED includes four LED chips 1, a package substrate 2, a die attach layer 3, leads 4, and a package paste layer 7; the encapsulation adhesive layer 7 is a conventional spherical cap lens with a radius R 0 Refractive index of encapsulation glue layer 7 =4.6mmn 0 1.41, and the top surface of the package substrate 2 is not provided with a reflective layer; no zener diode is integrated nor is there a lead connected to the zener diode.
Fig. 22 and 23 are photographs of the LED without the phosphor of comparative example 1.
The light efficiency of the LED without the fluorescent powder of the comparative example 1 is 111.23 lm/W through the test of an integrating sphere method (GB/T24824-2009).
The phosphor-free LEDs of example 1 and comparative example 1 were tested for their antistatic ability using a remote EMS6100-2B electrostatic discharge generator, and the results are shown in the following table, with the phosphor-free LEDs only being capable of withstanding static electricity of several hundred volts to several kilovolts without an integrated zener diode; and in the case of the integrated zener diode, the phosphor-free LED can withstand static electricity of twenty kilovolts or more.
Table 1 antistatic ability test results
Comparative example 2
Comparative example 2 is substantially the same as example 5 except that:
the LED without fluorescent powder comprises four LED chips 1, a packaging substrate 2, a die bonding layer 3, leads 4 and a packaging adhesive layer 7; the encapsulation adhesive layer 7 is a conventional spherical cap lens with a radius R 0 Refractive index n of encapsulation layer 7 =4.6mm 0 1.41, and the top surface of the package substrate 2 is not provided with a reflective layer.
The light efficiency of the LED without fluorescent powder of comparative example 2 is 126.43 lm/W by the integrating sphere method (GB/T24824-2009).
TABLE 2 comparison of the main parameters of the phosphor-free LEDs of the examples and comparative examples
Compared with comparative example 1, the phosphor-free LED of example 7 employs a large spherical cap lens as the encapsulation adhesive layer, thereby realizing light efficiency improvement, and demonstrating that the use of the large spherical cap lens can reduce total reflection at the interface between the encapsulation adhesive layer and air and improve primary light extraction. Compared with comparative example 1, the phosphor-free LED of example 8 provided a reflective layer, which achieved an improvement in light efficiency, demonstrating that the improvement in reflectivity of the top surface of the package substrate can achieve total reflection of the package adhesive layer and the air interface or secondary light extraction of fresnel reflected light. Compared with comparative example 1, the phosphor-free LED package glue layer of example 9 adopts a material with a higher refractive index, thereby realizing light efficiency improvement, showing that the refractive index of the package glue layer is improved, and the total reflection at the interface between the LED chip and the package glue layer can be effectively reduced, and the primary light extraction is improved. Compared with the embodiment 7, the embodiment 6 can obtain the light effect improving effect of arranging the microstructure array on the spherical surface and the vertical plane of the large spherical cap lens.
Compared with comparative example 1, the light efficiency of the embodiment 1 and the embodiment 4 is respectively improved by 9.21% and 8.02%, which illustrates the overall light efficiency improvement effect implemented by the technical scheme of the application; unlike example 1, the LED chip of example 5 has a 9.13% improvement in light efficiency compared with comparative example 2, which also indicates that the LED chip of example 5 has an obvious effect of improving light efficiency after implementation of the technical scheme of the present application.
In addition, the phosphor-free LED of example 1 is integrated with the zener diode as compared with comparative example 1, but the antistatic ability of the phosphor-free LED is mainly determined by the LED chip although the example 1 is different from comparative example 2 in other package materials and structures, and thus, the effect of the package materials and structures on antistatic performance is small, and thus, it can be demonstrated that the integrated zener diode of example 1 can greatly improve antistatic performance as compared with comparative example 1.
The present invention is not limited to the above embodiments, but is merely preferred embodiments of the present invention, and the present invention should be considered as being within the scope of the present invention as long as the technical effects of the present invention are achieved by the same or equivalent means. Various modifications and variations are possible in the technical solution and/or in the embodiments within the scope of the invention.
Claims (10)
1. An LED package structure, comprising:
packaging a substrate;
an LED chip bonded on the package substrate; and
a packaging adhesive layer covering the LED chip;
wherein the refractive index n of the encapsulation adhesive layer 0 1.5 to 2.0; the packaging adhesive layer is provided with a spherical surface at the top and at least four lateral planes, the spherical center of the spherical surface of the packaging adhesive layer is positioned on the top surface of the packaging substrate, and the projected area S of the spherical surface of the packaging adhesive layer on the packaging substrate 1 Less than or equal to the area S of the packaging substrate 2 The maximum width d of the projection of the spherical surface of the packaging adhesive layer on the packaging substrate 1 Greater than the minimum width d of the package substrate 0 And is less than or equal to the maximum width d of the package substrate 2 。
2. The LED package structure of claim 1, wherein the LED chip is an LED chip of a surface light source.
3. The LED package structure of claim 1, wherein the package substrate has a rectangular top surface and four planar sides, the encapsulation glue layer has a top spherical surface and four lateral planar surfaces, and the four lateral planar surfaces of the encapsulation glue layer are coplanar with the four planar sides of the package substrate, respectively.
4. The LED package structure of claim 1, wherein the package substrate has a square top surface and four planar sides, the encapsulation glue layer has a top spherical surface and four lateral planar surfaces, and the four lateral planar surfaces of the encapsulation glue layer are coplanar with the four planar sides of the package substrate, respectively.
5. The LED package structure of claim 1, wherein the spherical surface of the top of the encapsulation glue layer is provided with a periodic or non-periodic microstructure array, and the plane lateral to the encapsulation glue layer is provided with a periodic or non-periodic microstructure array.
6. An LED packaging method, comprising the steps of:
providing a packaging substrate;
bonding an LED chip on the packaging substrate through a die bonding layer;
manufacturing a packaging adhesive layer covering the LED chip by adopting a primary mold top process;
wherein the refractive index n of the encapsulation adhesive layer 0 1.5 to 2.0; the packaging adhesive layer is provided with a spherical surface at the top and at least four lateral planes, the spherical center of the spherical surface of the packaging adhesive layer is positioned on the top surface of the packaging substrate, and the projected area S of the spherical surface of the packaging adhesive layer on the packaging substrate 1 Less than or equal to the area S of the packaging substrate 2 The maximum width d of the projection of the spherical surface of the packaging adhesive layer on the packaging substrate 1 Greater than the minimum width d of the package substrate 0 And is less than or equal to the maximum width d of the package substrate 2 。
7. A phosphor-free LED comprising:
a package substrate having a circuit;
the LED chip is bonded on the packaging substrate through the die bonding layer and is connected with a circuit of the packaging substrate through a lead;
the zener diode is bonded on the packaging substrate through the die bonding layer and is connected with a circuit of the packaging substrate through a lead;
the reflecting layer is arranged in the region where the top surface of the packaging substrate is complementary with the LED chip; and
a packaging adhesive layer covering the LED chip and the reflecting layer;
wherein the refractive index n of the encapsulation adhesive layer 0 1.5 to 2.0; the packaging adhesive layer is provided with a spherical surface at the top and at least four lateral planes, the spherical center of the spherical surface of the packaging adhesive layer is positioned on the top surface of the packaging substrate, and the projected area S of the spherical surface of the packaging adhesive layer on the packaging substrate 1 Less than or equal to the area S of the packaging substrate 2 The maximum width d of the projection of the spherical surface of the packaging adhesive layer on the packaging substrate 1 Greater than the minimum width d of the package substrate 0 And is less than or equal to the maximum width d of the package substrate 2 。
8. The phosphor-free LED of claim 7, wherein the encapsulant layer has a light transmittance of 99% or more.
9. The phosphor-free LED of claim 7, wherein the thickness D of the reflective layer 0 Thickness D of die bonding layer 1 Thickness D of LED chip 2 And thickness D of zener diode 3 Is related to D 1 +D 3 ＜D 0 ≤D 1 +D 2 。
10. The phosphor-free LED of claim 7, wherein the reflective layer has a reflectance of 95% or more.
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