CN117878028A - Mounting method of wave-absorbing material - Google Patents

Mounting method of wave-absorbing material Download PDF

Info

Publication number
CN117878028A
CN117878028A CN202410276839.1A CN202410276839A CN117878028A CN 117878028 A CN117878028 A CN 117878028A CN 202410276839 A CN202410276839 A CN 202410276839A CN 117878028 A CN117878028 A CN 117878028A
Authority
CN
China
Prior art keywords
carrier
wave
absorbing
bulge
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202410276839.1A
Other languages
Chinese (zh)
Other versions
CN117878028B (en
Inventor
邬庆波
程明芳
曹庆
陈笑笑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Jimaike Microelectronics Co Ltd
Original Assignee
Zhejiang Jimaike Microelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang Jimaike Microelectronics Co Ltd filed Critical Zhejiang Jimaike Microelectronics Co Ltd
Priority to CN202410276839.1A priority Critical patent/CN117878028B/en
Publication of CN117878028A publication Critical patent/CN117878028A/en
Application granted granted Critical
Publication of CN117878028B publication Critical patent/CN117878028B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67121Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)

Abstract

The invention discloses a mounting method of a wave-absorbing material. The mounting method comprises the following steps: s1, providing a second carrier, wherein a groove is formed in the second carrier; providing a degradable first carrier, wherein a degradable bulge is arranged or formed on the first carrier, the bulge is matched with the groove, and a wave-absorbing gasket is arranged on the bulge; s2, the first carrier is placed on the second carrier in an inverted mode, the wave-absorbing gasket is adhered to the bottom of the groove, and the first carrier and the second carrier are further bonded to form a temporary bonding body; s3, removing the first carrier and the protrusions in the temporary bonding body. According to the invention, the wave-absorbing gasket is introduced through the degradable first carrier, so that batch mounting can be realized, and the subsequent degradation is realized, so that the function of the module sealing cover is not influenced; and the consistency of the mounting process can be ensured through the wafer-level bonding process, and the mounting efficiency and the mounting effect are improved.

Description

Mounting method of wave-absorbing material
Technical Field
The invention relates to the technical field of semiconductors, in particular to a mounting method of a wave-absorbing material.
Background
In order to cope with the problem, the current mainstream technology is to add a wave-absorbing material into the packaging shell. The wave absorbing material is a functional material capable of absorbing and attenuating electromagnetic wave energy incident in space and reducing or eliminating reflected electromagnetic wave, and is widely applied to electronic equipment products such as mobile phones, notebook computers, digital cameras, read-write boards and the like.
Typical wave absorbing materials are made of silicon nitride, carbon nano-tubes, composite materials and the like, and the materials are solid and colloid. For the current mainstream ceramic tube shell type wave-absorbing material products, a suction nozzle is generally used for sucking the solid wave-absorbing material when the ceramic tube shell type wave-absorbing material products are attached to a packaging shell, and then the bottom is hot-pressed at the bottom of the packaging shell after glue dipping; however, the colloid wave absorbing material is soft and cannot be directly attached to the bottom of the groove of the packaging shell, so that the colloid wave absorbing material can only be used for coating the flat surface.
The ceramic wave-absorbing material products are regular in shape, the shape of the suction nozzle is rectangular or square in the mounting process, but for the current advanced silicon-based radio frequency module, in order to increase the electromagnetic wave isolation capability between channels, and simultaneously in order to increase the mechanical strength of the silicon-based cap, a silicon wall is arranged at the bottom of the cap, so that the wave-absorbing material is generally formed into an irregular pattern, and the difficulty is increased for mounting the solid or colloid wave-absorbing gasket at the bottom of the cap groove; meanwhile, the cap groove is usually narrow, and the pasting position needs to be checked repeatedly when the wave-absorbing material is pasted, which is labor-consuming and labor-saving; in addition, single chip mounting can also affect throughput.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a method for mounting a wave-absorbing material, which is intended to solve the above-mentioned problems.
In order to achieve the above purpose, the present invention adopts the following technical scheme.
The first aspect of the present invention provides a mounting method of a wave-absorbing material, comprising the steps of:
s1, providing a second carrier, wherein a groove is formed in the second carrier; providing a degradable first carrier, wherein a degradable bulge is arranged or formed on the first carrier, the bulge is matched with the groove, and a wave-absorbing gasket is arranged on the bulge;
s2, the first carrier is placed on the second carrier in an inverted mode, the wave-absorbing gasket is adhered to the bottom of the groove, and the first carrier and the second carrier are further bonded to form a temporary bonding body;
s3, removing the first carrier and the protrusions in the temporary bonding body.
Compared with the prior art, the invention has the following beneficial effects:
according to the invention, the bump is arranged on the first carrier for pre-placing the wave-absorbing gasket, after the wave-absorbing gasket is confirmed, the wave-absorbing gasket is attached, the first carrier and the bump can be degraded by light or heat later, and further removed completely by rinsing or etching, so that the function of the sealing cover of the second carrier module is not affected later; in addition, the wafer-level bonding process can realize batch mounting, so that the consistency of the mounting process is ensured, and the mounting efficiency and the mounting effect are improved.
Drawings
Fig. 1 shows a schematic structure of a second carrier according to the present invention.
Fig. 2 is a schematic structural view of a wave absorbing pad according to the present invention.
FIG. 3A is a schematic illustration of the formation of protrusions on a first support by coating with a degradable gel in accordance with the present invention.
Fig. 3B shows one of the schematic diagrams of the coating of the colloid material on the protrusions according to the present invention.
Fig. 3C is a schematic view showing a method of attaching a wave-absorbing pad to a bump by using a gel material according to the present invention.
Fig. 3D is a schematic view showing a method of forming a connection pad by coating an adhesive material on a wave-absorbing pad according to the present invention.
Fig. 3E shows one of the schematic views of the present invention for bonding a first carrier and a second carrier to form a temporary bond.
Fig. 3F is a schematic diagram showing removal of the first carrier from the temporary bond in accordance with the present invention.
FIG. 3G is a schematic illustration of removal of the bump from the temporary bond in accordance with the present invention.
FIG. 3H is a schematic diagram showing removal of colloidal material from temporary bonds according to the present invention.
Fig. 4A is a schematic view showing the formation of a bump by etching the first carrier in the present invention.
FIG. 4B is a schematic diagram showing a second embodiment of the present invention for coating the bumps with a colloidal material.
FIG. 4C is a schematic diagram showing a second embodiment of the present invention in which a wave-absorbing pad is attached to a bump by a glue material.
FIG. 4D is a schematic diagram showing a second embodiment of the present invention in which an adhesive material is coated on the wave-absorbing pad to form a connection pad.
Fig. 4E shows a second schematic view of bonding a first carrier and a second carrier to form a temporary bond in accordance with the present invention.
FIG. 4F is a second schematic view showing removal of the first carrier from the temporary bond in the present invention.
Fig. 5A is a schematic view showing that the first carrier completely covers and adheres the wave-absorbing material layer in the present invention.
Fig. 5B is a schematic diagram showing an etching process performed on a composite body formed by adhering a wave-absorbing material layer to form a bump in the present invention.
The reference numerals in FIGS. 1, 2, 3A-3G, 4A-4F and 5A-5B are:
200. second carrier
201. Groove
100. First carrier
101. Protrusions
102. Colloidal material
103. Wave absorbing pad
104. And (5) connecting gaskets.
Detailed Description
Further advantages and effects of the present invention will become apparent to those skilled in the art from the disclosure of the present invention, which is described by the following specific examples.
Before the embodiments of the invention are explained in further detail, it is to be understood that the invention is not limited in its scope to the particular embodiments described below; it is also to be understood that the terminology used in the examples of the invention is for the purpose of describing particular embodiments only, and is not intended to limit the scope of the invention. The test methods in the following examples, in which specific conditions are not noted, are generally conducted under conventional conditions or under conditions recommended by the respective manufacturers.
Where numerical ranges are provided in the examples, it is understood that unless otherwise stated herein, both endpoints of each numerical range and any number between the two endpoints are significant both in the numerical range. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. In addition to the specific methods, devices, materials used in the embodiments, any methods, devices, and materials of the prior art similar or equivalent to those described in the embodiments of the present invention may be used to practice the present invention according to the knowledge of one skilled in the art and the description of the present invention.
The first aspect of the present invention provides a mounting method of a wave-absorbing material, comprising the steps of:
s1, providing a second carrier, wherein a groove is formed in the second carrier; providing a degradable first carrier, wherein a degradable bulge is arranged or formed on the first carrier, the bulge is matched with the groove, and a wave-absorbing gasket is arranged on the bulge;
s2, the first carrier is placed on the second carrier in an inverted mode, the wave-absorbing gasket is adhered to the bottom of the groove, and the first carrier and the second carrier are further bonded to form a temporary bonding body;
s3, removing the first carrier and the protrusions in the temporary bonding body.
According to the mounting method, the wave-absorbing gasket is preset on the protrusion of the degradable first carrier, then the wave-absorbing gasket is mounted at the bottom of the groove of the second carrier, and the first carrier and the protrusion can be completely degraded and removed subsequently, so that the capping function of the subsequent second carrier is not affected; and the method can realize batch mounting of the wave-absorbing materials, ensure the consistency and uniformity of the mounting process, reduce the difficulty of mounting the wave-absorbing gaskets at the bottoms of the grooves, simplify the steps and save manpower.
As shown in fig. 1, the second carrier 200 is a wafer, the groove 201 is disposed inside the wafer 200, the wafer 200 may be a round silicon wafer, a glass wafer, or a metal wafer, or may actually be a silicon wafer, a glass wafer, or a metal wafer with other shapes, and the thickness of the wafer 200 is 100 μm-1 cm. The second carrier 200 in the present application is a wafer to which a wave absorbing pad is to be attached. The grooves 201 are formed on the surface of the second carrier 200 by grooving, and may be square or irregular, and have a depth of 50 μm to 1mm. The depth of the recess 201 should not be too deep, otherwise the structure of the wafer is destroyed.
As shown in fig. 2, the wave absorbing pad 103 is a film containing a wave absorbing material. Preferably, the material of the wave absorbing pad 103 is silicon carbide or carbon nanotube. It can be understood that the gasket body is a conventional flat gasket, an annular flat gasket and the like. The thickness of the wave absorbing pad is 10 mu m-5 mm.
In some embodiments, the matching means that the shape of the cross section of the grooves 201 is the same as the shape of the cross section of the protrusions 101, and the number of grooves 201 is the same as the number of protrusions 101; it will further be appreciated that the concave surface of the recess 201 coincides with the top surface of the protrusion 101. It is understood that the matching means that when the top surface of the protrusion is planar, the concave surface of the groove is also planar; when the top surface of the bulge is 1/4 spherical shell, the concave surface of the groove is also 1/4 spherical shell.
In some embodiments, the material of the first carrier 100 is selected from a thermally decomposable material or a photodegradable material. In some embodiments, the material of the protrusions 101 is selected from a thermally or photo-degradable material. Thermal decomposition refers to heating to cause thermal decomposition of the polymer material, for example, hydrocarbon polymer thermal decomposition end products are carbon and hydrogen. Photodecomposition refers to a chemical reaction of a compound by photodecomposition, which can decompose a molecule into two small molecules or two free radicals. In the application, the degradable protrusion 101 is arranged or formed on the degradable first carrier 100, the wave-absorbing gasket 103 is introduced through the protrusion 101, the wave-absorbing gasket 103 is preset at the top end of the protrusion 101, and the first carrier 100 and the protrusion 101 are completely removed in a photolysis or decomposition mode and the like, so that the functions of the follow-up module cap of the second carrier are not affected.
Further, the thermal decomposition material is selected from one or two of epoxy resin material and polyimide material. As an example, the material of the first carrier 100 is selected from epoxy materials. The epoxy resin is thermally decomposed into: at about 400 ℃, the resin is subjected to heat to break chemical bonds, and pyrolysis produces the following: CO, CO 2 Water, fat, lignin, aromatic hydrocarbons, volatile organics, and the like.
Further, the photodecomposition material is selected from one or more of polyimide material, polystyrene material, and polyalkyl resin material. As an example, the material of the first carrier 100 is selected from polystyrene materials. Polystyrene photodecomposition into: the carbon-carbon bond and the carbon-hydrogen bond in the polystyrene molecule can be broken under the action of ultraviolet rays to generate free radicals, the free radicals further react with oxygen molecules to form active oxygen species, and the active oxygen species can initiate the breaking of polyethylene molecular chains to reduce the molecular weight of the polyethylene molecular chains; meanwhile, the active oxygen species can further react with polystyrene molecules, and oxygen atoms or oxidation groups are introduced to enable the polystyrene to form products containing the oxygen atoms, so that the products are further photodegradation and decomposition, and finally are converted into low-molecular-weight gas and water-soluble compounds. When the first carrier and the temporary bonding body are prepared, the irradiation of visible light to the first carrier is avoided, and when the first carrier is removed, the first carrier is irradiated by the visible light, so that the first carrier can be decomposed.
In some embodiments, the protrusions 101 are arranged in a linear array. It will be appreciated that the linear array arrangement of the protrusions 101 is not a regular nano linear array with a regular surface, but may be a random array arrangement, as long as the protrusions meet the requirement of attaching the wave-absorbing pad, rather than the situation that lamination occurs to affect the attachment. The first carrier 100 provided with the plurality of protrusions 101 can mount the wave absorbing pads 103 on the plurality of second carriers 200.
In some embodiments, the height of the protrusions 101 is 100 μm to 1cm.
In step S1, the wave absorbing pad 103 is provided on the protrusion 101 by at least one of the following methods.
As an example, the surface of the first carrier 100 is coated with a degradable adhesive, and the protrusions 101 are formed on the surface of the first carrier 100, and the specific structure is shown in fig. 3A. Next, a colloid material 102 is coated on the protrusion 101, and the specific structure is shown in fig. 3B. The wave-absorbing pad 103 is connected with the protrusion 101 through the colloid material 102 to form a first carrier for loading the wave-absorbing pad, and the specific structure is shown in fig. 3C. The degradable glue is selected from a thermal decomposition material or a photodecomposition material. The gel material 102 is selected from a removable hot melt adhesive or a photosensitive adhesive. The separation of the upper layer material and the lower layer material can be completed through heating or photolysis, and the colloid material can be cleaned.
As another example, the bump 101 is formed by etching the first carrier 100, and the specific structure is shown in fig. 4A. A gel material 102 is then applied to the protrusions 101, the specific structure of which is shown in fig. 4B. The wave-absorbing pad 103 is connected to the protrusion 101 through the colloid material 102 to form a first carrier loaded with the wave-absorbing pad, and the specific structure is shown in fig. 4C. The etching treatment comprises any one of photoetching, dry etching, mechanical grinding, water grinding and gas cutting. The colloid material is selected from hot melt type glue or photosensitive glue. The gel material may be washed.
As another example, the first carrier 100 is coated with a colloidal material 102, and the specific structure is shown in fig. 5A. Then, the wave-absorbing material layer 103 is glued by the colloid material 102 to form a composite body, and the specific structure is shown in fig. 5B. The composite is then etched to remove a portion of the wave-absorbing material layer 103 and a portion of the first carrier to form a bump provided with a wave-absorbing pad on the surface of the composite, the resulting structure being shown in fig. 4C. The etching treatment comprises any one of photoetching, dry etching, mechanical grinding, water grinding and gas cutting. When the wave-absorbing material layer 103 is adhered, a hot-pressing process is adopted to adhere the wave-absorbing material layer 103 to the whole surface of the first carrier 100, then the first carrier adhered with the wave-absorbing material layer 103 is etched to form the areas and the number matched with the grooves, and then the other areas are continuously etched and the heights of the other areas are reduced, so that the protrusions are formed.
In step S1, an isolation layer is disposed on the first carrier. The isolation layer is made of a temporary welding material, such as WAFERBOND cube HT-10.11 or HT-10.12 MATERIALS, and is beneficial to separating the protrusions 101 from the first carrier 100.
In step S2, the wave-absorbing pad 103 is adhered to the bottom of the groove 201 by using an adhesive, the adhesive forms a connection pad 104, and the thickness of the connection pad 104 is 1 μm-50 μm for subsequent permanent adhesion to the bottom of the groove 201.
As an example, the connection pad 104 is formed on the top surface of the wave-absorbing pad 103 by using an adhesive material, and the specific structure is shown in fig. 3D.
As another example, the connection pad 104 is formed on the top surface of the wave-absorbing pad 103 by using an adhesive material, and the specific structure is shown in fig. 4D.
Further, the adhesive material is a curing adhesive. Such as polyvinyl alcohol, polyethylene glycol, polyurethane, polyacrylate, which has a curing temperature below 200 c, can be present as a permanent film between the wave absorbing pad 103 and the groove 201. The heat press baking and curing at 100-300 ℃ makes the connection pad 104 and the wave-absorbing pad 103 in a permanent bonding state, and the connection pad 104 and the bottom of the groove 201 in a permanent bonding state.
In step S2, the first carrier 100 is inverted on the second carrier 200, and the protrusion 101 is aligned with the groove 201, so that the protrusion 101 completely fills the groove 201, and the first carrier 100 and the second carrier 200 are further assembled by a hot pressing process to form a temporary bonding body, and the specific structure is shown in fig. 3E and fig. 4E. Specifically, the thermal compression process is a wafer level bonding process.
Further, the bonding adopts a wafer-level bonding process. The method is specifically a thermal compression bonding process, and the parameters of the thermal compression bonding process mainly comprise: pressure, temperature and time, the setting of the pressure is determined by combining a specific bonding structure; the temperature is set to be 100-300 ℃ generally; the bonding time is usually 5 to 30 minutes. The photodegradable material or the thermally decomposable material is cured by a wafer level bonding process.
In step S3, the first carrier 100 is removed by thermal decomposition or photodecomposition, and the structure after the removal of the first carrier 100 is as shown in fig. 3F and 4F.
As an example, when the first carrier 100 is a thermally decomposable material, the temporary bond is placed under a certain temperature environment, and the thermally decomposable material is thermally decomposed by pyrolysis of the first carrier in the temporary bond, for example, the temperature of pyrolysis may be 100 to 400 ℃, or 100 to 180 ℃, or 150 to 220 ℃, or 180 to 300 ℃.
As an example, when the first carrier 100 is a photodecomposition material, the temporary bond is placed under an illumination environment, and the first carrier in the temporary bond is irradiated with light, so that the photodecomposition material is photodecomposition, and the light may be, for example, ultraviolet light or the like.
In step S3, the bump 101 is removed by solvent cleaning or ion etching, and the structure after removing the bump 101 is shown in fig. 3G. The solvent may be selected according to the material of the photodegradable material or the thermally decomposable material or the degradable gel, and contains acetone, ethanol, water, methanol, cyclic aromatic hydrocarbon, butanone, etc. or a combination thereof.
In step S3, the colloid material 102 used in the process of adhering the wave-absorbing pad 103 and the bump 101 is removed by solvent cleaning or ion etching, and the structure after removing the colloid material 102 is shown in fig. 3H. The solvent can be water, ethanol, methanol, etc. or their combination.
In this application, the height of the protrusion 101 is greater than the depth of the recess 201. The height refers to the vertical distance between the top surface of the protrusion 101 and the horizontal plane in which the top surface of the first carrier 100 is located.
In this application, the depth of the groove 201 is greater than the sum of the thickness of the wave-absorbing pad 103 and the thickness of the connection pad 104 formed by the adhesive, so that the function of the subsequent capping module is not affected after the wave-absorbing pad is attached.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (10)

1. The method for mounting the wave-absorbing material is characterized by comprising the following steps of:
s1, providing a second carrier, wherein a groove is formed in the second carrier; providing a degradable first carrier, wherein a degradable bulge is arranged or formed on the first carrier, the bulge is matched with the groove, and a wave-absorbing gasket is arranged on the bulge;
s2, the first carrier is placed on the second carrier in an inverted mode, the wave-absorbing gasket is adhered to the bottom of the groove, and the first carrier and the second carrier are further bonded to form a temporary bonding body;
s3, removing the first carrier and the protrusions in the temporary bonding body.
2. The mounting method according to claim 1, wherein the material of the first carrier is selected from a thermally decomposable material or a photodegradable material;
and/or the material of the protrusions is selected from thermal decomposition materials or photodecomposition materials;
and/or the second carrier is selected from a wafer;
and/or the wave-absorbing pad is a film containing wave-absorbing material;
and/or the wave-absorbing gasket is adhered to the bottom of the groove by using viscose, wherein the viscose is one or more selected from polyvinyl alcohol glue, polyethylene glycol glue, polyurethane glue and polyacrylate glue.
3. The mounting method according to claim 2, wherein the thermal decomposition material is selected from one or both of an epoxy resin material and a polyimide material;
and/or the photodecomposition material is selected from one or more of polyimide material, polystyrene material, and polyalkyl resin material;
and/or the second carrier is selected from any one of a silicon wafer, a glass wafer and a metal wafer;
and/or the wave-absorbing material is selected from one or two of silicon carbide and carbon nano tubes.
4. The mounting method according to claim 1, wherein the wave-absorbing pad is provided on the bump by any one of the following methods;
1) Completely covering and pasting a wave-absorbing material layer on the first carrier to form a complex, and etching the complex to remove part of the wave-absorbing material layer and part of the first carrier so as to form a bulge provided with a wave-absorbing gasket on the surface of the complex;
2) Forming a bulge by coating degradable glue on the surface of the first carrier, and then pasting the wave-absorbing gasket on the bulge to form a bulge provided with the wave-absorbing gasket;
3) And etching the first carrier to form the bulge, and then pasting the wave-absorbing gasket on the bulge to form the bulge provided with the wave-absorbing gasket.
5. The mounting method according to claim 4, wherein the etching treatment is selected from any one of photolithography, dry etching, grinding, water milling, and gas cutting;
and/or, 2) the degradable glue material is selected from thermal decomposition material or photodecomposition material;
and/or, 1) sticking the wave-absorbing material layer on the surface of the first carrier through a hot pressing process;
and/or, in 2) or 3), the wave-absorbing pad is adhered by adopting a colloid material, wherein the colloid material is selected from removable hot melt adhesive or photosensitive adhesive.
6. The mounting method according to claim 2, wherein the projections are filled in the grooves;
and/or the height of the protrusion is greater than the depth of the groove;
and/or the depth of the groove is greater than the sum of the thickness of the wave-absorbing pad and the thickness of the connection pad formed by the adhesive.
7. The mounting method according to claim 6, wherein the height of the bump is 100 μm to 1cm;
and/or the thickness of the wave absorbing pad is 10 mu m-1 mm;
and/or the thickness of the connection gasket formed by the viscose is 1-50 μm;
and/or the depth of the groove is 50 mu m-1 mm.
8. The method of mounting of claim 1, wherein the bonding is performed using a wafer level bonding process.
9. The mounting method according to claim 1, wherein in step S3, the removing is performed by one or more of pyrolysis, photolysis, rinsing, and ion etching.
10. The mounting method according to claim 1, wherein the first carrier is provided with an isolation layer, and the bump is provided on the isolation layer.
CN202410276839.1A 2024-03-12 2024-03-12 Mounting method of wave-absorbing material Active CN117878028B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410276839.1A CN117878028B (en) 2024-03-12 2024-03-12 Mounting method of wave-absorbing material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202410276839.1A CN117878028B (en) 2024-03-12 2024-03-12 Mounting method of wave-absorbing material

Publications (2)

Publication Number Publication Date
CN117878028A true CN117878028A (en) 2024-04-12
CN117878028B CN117878028B (en) 2024-05-28

Family

ID=90579679

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202410276839.1A Active CN117878028B (en) 2024-03-12 2024-03-12 Mounting method of wave-absorbing material

Country Status (1)

Country Link
CN (1) CN117878028B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104992908A (en) * 2015-07-14 2015-10-21 华进半导体封装先导技术研发中心有限公司 Manufacturing method of ultrathin seal cover in wafer-level package
CN110379721A (en) * 2019-07-30 2019-10-25 中芯集成电路(宁波)有限公司 Fan-out package method and encapsulating structure
CN112017550A (en) * 2019-05-31 2020-12-01 云谷(固安)科技有限公司 Display panel, manufacturing method thereof and display device
CN112053959A (en) * 2020-03-02 2020-12-08 浙江集迈科微电子有限公司 Method for manufacturing cubic structure of multilayer stacked radio frequency optical module
WO2022161464A1 (en) * 2021-01-29 2022-08-04 中芯集成电路(宁波)有限公司上海分公司 Wafer-level system packaging method and wafer-level system packaging structure
WO2023098004A1 (en) * 2021-12-01 2023-06-08 华进半导体封装先导技术研发中心有限公司 Three-dimensional integrated airtight packaging interconnect structure and manufacturing method therefor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104992908A (en) * 2015-07-14 2015-10-21 华进半导体封装先导技术研发中心有限公司 Manufacturing method of ultrathin seal cover in wafer-level package
CN112017550A (en) * 2019-05-31 2020-12-01 云谷(固安)科技有限公司 Display panel, manufacturing method thereof and display device
CN110379721A (en) * 2019-07-30 2019-10-25 中芯集成电路(宁波)有限公司 Fan-out package method and encapsulating structure
CN112053959A (en) * 2020-03-02 2020-12-08 浙江集迈科微电子有限公司 Method for manufacturing cubic structure of multilayer stacked radio frequency optical module
WO2022161464A1 (en) * 2021-01-29 2022-08-04 中芯集成电路(宁波)有限公司上海分公司 Wafer-level system packaging method and wafer-level system packaging structure
WO2023098004A1 (en) * 2021-12-01 2023-06-08 华进半导体封装先导技术研发中心有限公司 Three-dimensional integrated airtight packaging interconnect structure and manufacturing method therefor

Also Published As

Publication number Publication date
CN117878028B (en) 2024-05-28

Similar Documents

Publication Publication Date Title
KR101143797B1 (en) Method of thining a semiconductor substrate
CN1251484C (en) Optical device and its manufacturing method, optical module, circuit board and electronic equipment
CN1300843C (en) Package assembly for electronic device and method of making same
US20190043775A1 (en) Molded air cavity packages and methods for the production thereof
KR20050053019A (en) Substrate supporting plate and striping method for supporting plate
US7183124B2 (en) Surface mount saw device manufacturing method
US7517722B2 (en) Method of producing a universal semiconductor housing with precrosslinked plastic embedding compounds
CN113345829B (en) Mass transfer method of micro light-emitting diode, display device and manufacturing method thereof
CN1280056A (en) Multilager base plate
JP2001524264A (en) Integrated circuit package
KR20140001210A (en) Interposers, electronic modules, and methods for forming the same
JP2016503255A (en) MEMS device and method for encapsulating MEMS device
CN117878028B (en) Mounting method of wave-absorbing material
JP2004363770A5 (en)
US20020190266A1 (en) Semiconductor package having a resin cap member
US20030016510A1 (en) Method for mounting electronic components on substrates
KR100360161B1 (en) Method for manufacturing liquid crystal cell
KR100909198B1 (en) Electronic device and manufacturing method thereof
EP0114106A2 (en) Method for manufacturing a semiconductor memory device having a high radiation resistance
JP2004343378A (en) Surface acoustic wave device and its manufacturing method
JP6625774B1 (en) Hollow package structure and its manufacturing method, and semiconductor device and its manufacturing method
US6664648B2 (en) Apparatus for applying a semiconductor chip to a carrier element with a compensating layer
JP2010206028A (en) Method of manufacturing ic package, ic package, optical pickup, and transmitting and receiving device of optical wireless data communication
CN111243968A (en) Method for placing chips in groove
CN116417353B (en) Preparation method of semiconductor packaging structure

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant