CN117845335A - Method for improving iron and particles of annealing furnace body - Google Patents
Method for improving iron and particles of annealing furnace body Download PDFInfo
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- CN117845335A CN117845335A CN202311700005.0A CN202311700005A CN117845335A CN 117845335 A CN117845335 A CN 117845335A CN 202311700005 A CN202311700005 A CN 202311700005A CN 117845335 A CN117845335 A CN 117845335A
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- Prior art keywords
- silicon wafer
- annealing furnace
- sic boat
- iron
- boat
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 238000000137 annealing Methods 0.000 title claims abstract description 49
- 229910052742 iron Inorganic materials 0.000 title claims abstract description 39
- 239000002245 particle Substances 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 54
- 239000010703 silicon Substances 0.000 claims abstract description 54
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052786 argon Inorganic materials 0.000 claims abstract description 22
- 239000010453 quartz Substances 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000012544 monitoring process Methods 0.000 claims abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000011049 filling Methods 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000011068 loading method Methods 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 3
- 230000006866 deterioration Effects 0.000 claims description 3
- 239000003344 environmental pollutant Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 231100000719 pollutant Toxicity 0.000 claims description 3
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 3
- 239000012498 ultrapure water Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 abstract description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 238000005406 washing Methods 0.000 abstract description 2
- 230000007547 defect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a method for improving iron and particles of an annealing furnace body, which belongs to the technical field of silicon wafer processing and comprises the following operation steps: the first step: the SIC boat was dried by washing with 49% hf and charged into an annealing furnace. And a second step of: introducing 10-30slm oxygen into a quartz furnace tube, and baking the SIC boat at 1200 ℃ for 10-15 hours without entering the furnace tube. And a third step of: and baking for 1-3H by using 10-30slm of argon at 1200 ℃. Fourth step: filling the SIC boat with the cleaned p-type lightly doped dummy sheet, lifting into a quartz furnace tube, and baking at 1200 ℃ for 22H. Fifth step: the monitoring pieces are respectively arranged at the upper, middle and lower positions of the boat body, are lifted into the quartz furnace tube, and are sent to the measuring body iron for observing the iron level of the annealing furnace body after annealing at 1200 ℃. Sixth step: and (3) according to the test level of the iron in the fifth step, after a new clean P-type lightly doped DUMMY sheet is replaced, repeating the steps 2-5. The improvement of the metal body level and the grain of the newly-packaged annealing furnace is realized, the metal body level is reduced from 2E12 to 2E10, and the annealed silicon wafer with 19nm grain of 0 is successfully produced.
Description
Technical Field
The invention relates to the technical field of silicon wafer processing, in particular to a method for improving iron and particles of an annealing furnace body.
Background
As integrated circuit device feature sizes decrease, the presence of silicon wafer surface defects such as crystal originated particles COP (Crystal originated particle), dislocations, particles, etc., can severely impact device performance, resulting in yield loss. Wherein the elimination of COP can be generally solved by epitaxial growth or high temperature annealing of the wafer at 1100-1200 c, which is a more economical way to lower the cost of epitaxy and to be more efficient.
The high-temperature annealing eliminates the defects of COP and the like, forms a clean area on the surface of the silicon wafer, and provides a high-quality activation layer for device manufacture. However, when the annealing furnace is newly installed, the quartz tube of the annealing furnace and the boat body borne by the silicon wafer inevitably produce metal and particle contamination in the production and transportation processes, and the silicon wafer is polluted in the high-temperature process, so that the metal and the particle of the silicon wafer body are deteriorated. At present, an effective method for solving the level of iron and particles in a newly-installed annealing furnace body is lacking.
Disclosure of Invention
The invention mainly solves the defects existing in the prior art, and provides a method for improving iron and particles of an annealing furnace body, which realizes improvement of molten iron level and particles of a newly-installed annealing furnace metal body, reduces the metal level of the body from 2E12 to 2E10, and successfully outputs an annealed silicon wafer with 19nm particles of 0.
The technical problems of the invention are mainly solved by the following technical proposal:
a method for improving iron and particles of an annealing furnace, comprising the following steps:
the first step: before loading the SIC boat into an annealing furnace, soaking and cleaning the SIC boat by using 49% HF, drying the SIC boat, and loading the SIC boat into the annealing furnace.
And a second step of: after the SIC boat is placed in a machine table, the SIC boat is lifted into a quartz furnace tube, 10-30slm of argon is introduced in a heating stage, 10-30slm of oxygen is introduced when the temperature is raised to 1200 ℃, the SIC boat is baked for 8 hours and then cooled, and the SIC boat is withdrawn from the quartz furnace tube.
And a third step of: the SIC boat is lifted into a quartz furnace tube, 10 to 30slm of argon is introduced in the temperature rising stage, 10 to 30slm of hydrogen chloride is introduced when the temperature is raised to 1200 ℃, and the temperature is reduced after baking for 1 to 3 hours.
Fourth step: preparing a cleaned P-type lightly doped silicon wafer, filling a SIC boat, then lifting the silicon wafer into a quartz furnace tube, heating to 1200 ℃ for 20-22 hours under the condition that the ambient gas is argon, and then cooling.
Fifth step: and preparing the P-type lightly doped silicon wafer as a bulk iron monitoring sheet, respectively placing the silicon wafer at the upper, middle and lower positions of the SIC boat, raising the temperature to 1200 ℃ after the silicon wafer is lifted into a furnace body for annealing, and conveying the monitoring sheet to measure the bulk iron so as to observe the deterioration condition of the annealing furnace body on the bulk iron of the silicon wafer.
Sixth step: according to the iron content level of the sending and measuring body, a new P-type lightly doped silicon wafer is replaced to be used as filling; the second to fifth steps are repeatedly performed.
Preferably, the concentration level of HF for cleaning the SIC boat is 49%, and the SIC boat is used for cleaning pollutants such as dirt particles on the surface of the SIC boat; the SIC boat is soaked in the solution for 4 to 5 hours, and after soaking, the SIC boat is flushed by ultrapure water and then is flushed by nitrogen to be kept stand.
Preferably, the speed of the first heating stage is 1-4 ℃/min, the argon flow is 10-30slm, the temperature is raised to 1200 ℃, oxygen is introduced for 8-12 hours, and the cooling speed is 1-4 ℃/min.
Preferably, the second heating speed is 1-4 ℃/min, the argon flow is 10-30slm, the temperature is raised to 1200 ℃, the HCL is introduced for 1-3 hours, and the cooling speed is 1-4 ℃/min.
Preferably, in the fourth step, after the silicon wafer is filled in the boat body of the SIC boat, the SIC boat is lifted into a quartz furnace tube, the argon flow is kept at 10-30slm, and the temperature is raised to 1200 ℃ and the holding time is 20-22 hours.
Preferably, the added silicon wafer is a P-type lightly boron-doped silicon wafer or an undoped silicon wafer, and is fed into an annealing furnace after being cleaned by hydrofluoric acid.
Preferably, in the fifth step, the argon flow is 10-30slm, the temperature is raised to 1200 ℃, the temperature is kept for 1-3 hours, and the monitoring sheet is a P type lightly boron doped silicon sheet or a silicon sheet with bulk iron at E8 level.
Preferably, in the sixth step, a new P-type lightly doped silicon wafer is replaced after the fifth step, the P-type lightly doped silicon wafer is cleaned and then sent into an annealing furnace, and the second step to the fifth step are repeated.
The invention can achieve the following effects:
compared with the prior art, the invention provides a method for improving the iron and particles of an annealing furnace body, which realizes the improvement of the iron level and the particles of a newly-installed annealing furnace metal body, reduces the metal level of the body from 2E12 to 2E10, and successfully produces an annealed silicon wafer with the particle size of 19nm of 0.
Drawings
FIG. 1 is a schematic view of annealed wafer particles MAP according to the present invention.
Detailed Description
The technical scheme of the invention is further specifically described below through examples and with reference to the accompanying drawings.
Examples: as shown in fig. 1, a method for improving iron and particles of an annealing furnace comprises the following operation steps:
the first step: before loading the SIC boat into an annealing furnace, soaking and cleaning the SIC boat by using 49% HF, and washing away pollutants such as dirt particles on the surface of the SIC boat; the SIC boat is soaked in the solution for 4 to 5 hours, flushed by ultrapure water, purged by nitrogen, kept stand, dried and then put into an annealing furnace.
And a second step of: after the SIC boat is placed in a machine table, the SIC boat is lifted into a quartz furnace tube, 10-30slm of argon is introduced in a heating stage, 10-30slm of oxygen is introduced when the temperature is raised to 1200 ℃, the SIC boat is baked for 8 hours and then cooled, and the SIC boat is withdrawn from the quartz furnace tube.
The first heating stage has a speed of 1-4 deg.c/min, argon flow of 10-30slm, temperature up to 1200 deg.c, oxygen supply for 8-12 hr, and temperature lowering of 1-4 deg.c/min.
And a third step of: the SIC boat is lifted into a quartz furnace tube, 10 to 30slm of argon is introduced in the temperature rising stage, 10 to 30slm of hydrogen chloride is introduced when the temperature is raised to 1200 ℃, and the temperature is reduced after baking for 1 to 3 hours.
The second heating speed is 1-4 ℃/min, the argon flow is 10-30slm, the temperature is raised to 1200 ℃, HCL is introduced for 1-3 hours, and the cooling speed is 1-4 ℃/min.
Fourth step: preparing a cleaned P-type lightly doped silicon wafer, filling a SIC boat, then lifting the silicon wafer into a quartz furnace tube, heating to 1200 ℃ for 20-22 hours under the condition that the ambient gas is argon, and then cooling.
After the silicon wafer is filled in the boat body of the SIC boat, the SIC boat is lifted into a quartz furnace tube, the argon flow is kept at 10-30slm, and the temperature is raised to 1200 ℃ and the holding time is 20-22 hours. The added silicon wafer is a P-type lightly boron-doped silicon wafer or an undoped silicon wafer, and is fed into an annealing furnace after being cleaned by hydrofluoric acid.
Fifth step: and preparing the P-type lightly doped silicon wafer as a bulk iron monitoring sheet, respectively placing the silicon wafer at the upper, middle and lower positions of the SIC boat, raising the temperature to 1200 ℃ after the silicon wafer is lifted into a furnace body for annealing, and conveying the monitoring sheet to measure the bulk iron so as to observe the deterioration condition of the annealing furnace body on the bulk iron of the silicon wafer.
And in the annealing process, the argon flow is 10-30slm, the temperature is raised to 1200 ℃, the temperature is kept for 1-3 hours, and the monitoring sheet is a P-type lightly boron-doped silicon sheet or a silicon sheet with bulk iron at E8 level.
Sixth step: according to the iron content level of the sending and measuring body, a new P-type lightly doped silicon wafer is replaced to be used as filling, and the new P-type lightly doped silicon wafer is sent into an annealing furnace after being cleaned; the second to fifth steps are repeatedly performed.
In conclusion, the method for improving the iron and the particles of the annealing furnace body realizes improvement of the molten iron and the particles of the newly-packed annealing furnace metal body, reduces the metal body level from 2E12 to 2E10, and successfully produces the annealed silicon wafer with the 19nm particles of 0.
The above embodiments are merely examples of the present invention, but the present invention is not limited thereto, and any changes or modifications made by those skilled in the art are included in the scope of the present invention.
Claims (8)
1. A method for improving iron and particles of an annealing furnace body, which is characterized by comprising the following operation steps:
the first step: before loading the SIC boat into an annealing furnace, soaking and cleaning the SIC boat by using 49% HF, drying the SIC boat and loading the SIC boat into the annealing furnace;
and a second step of: after the SIC boat is placed in a machine table, the SIC boat is lifted into a quartz furnace tube, 10-30slm of argon is introduced in a heating stage, 10-30slm of oxygen is introduced when the temperature is raised to 1200 ℃, the SIC boat is baked for 8 hours and then cooled, and the SIC boat is withdrawn from the quartz furnace tube;
and a third step of: the SIC boat is lifted into a quartz furnace tube, 10 to 30slm of argon is introduced in the heating stage, 10 to 30slm of hydrogen chloride is introduced when the temperature is raised to 1200 ℃, and the temperature is reduced after baking for 1 to 3 hours;
fourth step: preparing a cleaned P-type lightly doped silicon wafer, filling a SIC boat, then lifting the silicon wafer into a quartz furnace tube, heating to 1200 ℃ for 20-22 hours under the condition that the ambient gas is argon, and then cooling;
fifth step: preparing a P-type lightly doped silicon wafer as a bulk iron monitoring piece, respectively placing the P-type lightly doped silicon wafer at the upper, middle and lower positions of a SIC boat, raising the temperature to 1200 ℃ after the SIC boat is lifted into a furnace body for annealing, and conveying the monitoring piece to measure bulk iron so as to observe the deterioration condition of the annealing furnace body on the bulk iron of the silicon wafer;
sixth step: according to the iron content level of the sending and measuring body, a new P-type lightly doped silicon wafer is replaced to be used as filling; the second to fifth steps are repeatedly performed.
2. The method for improving iron and particulate annealing furnace of claim 1, wherein: the HF concentration level of the cleaned SIC boat is 49%, and the cleaned SIC boat is used for cleaning pollutants such as dirt particles on the surface of the SIC boat; the SIC boat is soaked in the solution for 4 to 5 hours, and after soaking, the SIC boat is flushed by ultrapure water and then is flushed by nitrogen to be kept stand.
3. The method for improving iron and particulate annealing furnace of claim 1, wherein: the first heating stage has a speed of 1-4 deg.c/min, argon flow of 10-30slm, temperature up to 1200 deg.c, oxygen supply for 8-12 hr, and temperature lowering of 1-4 deg.c/min.
4. The method for improving iron and particulate annealing furnace of claim 1, wherein: the second heating speed is 1-4 ℃/min, the argon flow is 10-30slm, the temperature is raised to 1200 ℃, HCL is introduced for 1-3 hours, and the cooling speed is 1-4 ℃/min.
5. The method for improving iron and particulate annealing furnace of claim 1, wherein: and step four, after the silicon wafer is filled in the boat body of the SIC boat, the SIC boat is lifted into a quartz furnace tube, the argon flow is kept at 10-30slm, and the temperature is raised to 1200 ℃ and the holding time is 20-22 hours.
6. The method for improving iron and particulate annealing furnace of claim 5, wherein: the added silicon wafer is a P-type lightly boron-doped silicon wafer or an undoped silicon wafer, and is fed into an annealing furnace after being cleaned by hydrofluoric acid.
7. The method for improving iron and particulate annealing furnace of claim 1, wherein: and fifthly, in the annealing process, the argon flow is 10-30slm, the temperature is raised to 1200 ℃, the temperature is kept for 1-3 hours, and the monitoring sheet is a P-type lightly boron doped silicon sheet or a silicon sheet with bulk iron at E8 level.
8. The method for improving iron and particulate annealing furnace of claim 1, wherein: and in the sixth step, a new P-type lightly doped silicon wafer is replaced after the fifth step, the silicon wafer is sent into an annealing furnace after being cleaned, and the second step to the fifth step are repeatedly carried out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311700005.0A CN117845335A (en) | 2023-12-12 | 2023-12-12 | Method for improving iron and particles of annealing furnace body |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311700005.0A CN117845335A (en) | 2023-12-12 | 2023-12-12 | Method for improving iron and particles of annealing furnace body |
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| CN117845335A true CN117845335A (en) | 2024-04-09 |
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| CN202311700005.0A Pending CN117845335A (en) | 2023-12-12 | 2023-12-12 | Method for improving iron and particles of annealing furnace body |
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| Country | Link |
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| CN (1) | CN117845335A (en) |
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- 2023-12-12 CN CN202311700005.0A patent/CN117845335A/en active Pending
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