CN117833015A - Laser transceiver unit of human eye safety wave band, array chip and manufacturing method - Google Patents
Laser transceiver unit of human eye safety wave band, array chip and manufacturing method Download PDFInfo
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Abstract
The invention relates to a laser transceiver unit of a human eye safety wave band, an array chip and a manufacturing method. The invention includes a substrate; the first reflector layer is arranged on the surface of the substrate; the active area layer is arranged on the surface of part of the first reflecting mirror layer; the gradual change layer is arranged on the surface of part of the active region layer; the intrinsic absorption layer is arranged on the surface of the gradual change layer; the buried tunnel junction is arranged on the surface of part of the active region layer; the cover layer is arranged on the surface of the buried tunnel junction; the second reflector layer is arranged on the surface of the cover layer; the substrate, a part of the first reflecting mirror component, a part of the active region layer, the buried tunnel junction, the cover layer and the second reflecting mirror layer jointly form a laser emission region; the substrate, the other part of the first reflecting mirror layer, the other part of the active region layer, the graded layer and the intrinsic absorption layer together form a laser receiving region. The invention can integrate the laser emitting structure and the laser detecting structure in a single chip or array at the same time, and the adopted laser is in a human eye safety wave band.
Description
Technical Field
The invention relates to the technical field of laser semiconductors, in particular to a laser transceiver unit of a human eye safety wave band, an array chip and a manufacturing method.
Background
The intelligent sensing technology mainly adopts a laser to emit signal light, adopts a detector to receive reflected signals, can rapidly and accurately acquire the distance information of the surrounding environment, and has very wide application prospect in the intelligent sensing fields such as face recognition, AR/VR, intelligent robots, unmanned driving and the like.
The existing intelligent perception sensor mainly adopts a scheme of a semiconductor laser, a detector and a beam shaping lens. In the prior art, the vertical cavity surface emitting semiconductor laser (VCSEL) gradually becomes the optimal emitting light source in the intelligent perception sensor with the advantages of easy on-chip integration, low power consumption, easy beam shaping and the like. Mature silicon detectors or semiconductor InGaAs detector array products are mainly used in the detector aspect. The problems of the prior art are as follows:
1. in the prior art, a discrete laser chip and a detection chip are adopted, so that the beam shaping is required to be carried out respectively, the integration level of the system is reduced, the beam shaping is required to be carried out manually, and the packaging cost of the system is increased.
2. In the prior art, a mature commercial detector is adopted, the response curve of the commercial detector covers a wide spectrum range, and the spectrum width of laser in the intelligent technology is only a few nanometers, so that the response of the detector to signals except the laser has great influence on the detection precision.
3. The luminescence wavelength of the VCSEL array chip used in the intelligent perception technical fields such as face recognition, laser radar and the like is in a near infrared band (700-900 nm), typical wavelengths comprise 850 nm, 910nm, 940nm and the like, mature products exist at present, and typical manufacturers comprise American coherent companies, china long-light China Hua cores and the like. The near infrared band laser is easy to be absorbed by retina, and has larger potential safety hazard for human eyes, the power of the transmitting signal of the intelligent sensing sensor is limited, and the detection distance and the detection precision are further limited.
Disclosure of Invention
Therefore, the invention provides a laser receiving and transmitting unit, an array chip and a manufacturing method of the human eye safety wave band, which can integrate a laser emitting structure and a laser detecting structure in a single chip or array at the same time, and the adopted laser is in the human eye safety wave band (1500 nm-1700 nm).
In order to solve the above technical problems, the present invention provides a laser transceiver unit of a human eye safety band, comprising:
a substrate;
the first reflector layer is arranged on the surface of the substrate;
an active region layer disposed on a portion of the first mirror layer surface;
the gradual change layer is arranged on the surface of part of the active area layer;
the intrinsic absorption layer is arranged on the surface of the gradual change layer;
the buried tunnel junction is arranged on the surface of part of the active region layer;
a capping layer disposed on a surface of the buried tunnel junction;
the second reflector layer is arranged on the surface of the cover layer;
wherein the substrate, a portion of the first mirror layer, a portion of the active region layer, the buried tunnel junction, the cap layer, and the second mirror layer together form a laser emitting region;
the substrate, the other part of the first reflecting mirror layer, the other part of the active region layer, the graded layer and the intrinsic absorption layer together form a laser receiving region.
In one embodiment of the present invention, the intrinsic absorption layer is provided with a plurality of trenches, and a Zn diffusion layer is provided in the trenches.
In one embodiment of the present invention, the surface of the first reflector layer is covered with an insulating layer, the insulating layer is in contact with the side surface of the intrinsic absorption layer and the side surface of the cover layer, the surface of the second reflector layer is exposed to form a laser emission window, the surface of the insulating layer is also covered with a part of the intrinsic absorption layer and is in contact with the Zn diffusion layer, and the surface of the Zn diffusion layer is provided with a window to form a laser receiving window.
In one embodiment of the present invention, the surface electrode layer further comprises a laser receiving area electrode layer and a laser emitting area electrode layer, wherein the laser receiving area electrode layer penetrates through the insulating layer and is in contact with the Zn diffusion layer, and the laser emitting area electrode layer is respectively in contact with the surface of the cover layer, the side surface of the second reflecting mirror layer and the insulating layer positioned on the side surface of the cover layer.
In one embodiment of the present invention, the semiconductor laser transceiver unit includes a plurality of laser emission windows and a laser receiving window connected in series.
In one embodiment of the invention, the surface of the substrate facing away from the first mirror layer is provided with a rear electrode layer.
In one embodiment of the invention, the first mirror layer and/or the first mirror layer employs a distributed Bragg mirror.
In one embodiment of the present invention, the active region layer is a barrier/quantum well/barrier structure; the material of the gradual change layer is InGaAsP; the intrinsic absorption layer is made of InP; the buried tunnel junction is of a heavily doped PN junction structure; the material of the cover layer is N-type InP.
The invention also provides a semiconductor laser receiving and transmitting array chip of the human eye safety wave band, which is characterized in that the array chip is formed by splicing a plurality of semiconductor laser receiving and transmitting units of the human eye safety wave band according to any one of claims 1-8.
The invention also provides a manufacturing method of the laser transceiver unit of the eye safety wave band, comprising the following steps:
providing a substrate;
sequentially epitaxially growing a first reflector layer, an active region layer, a graded layer and an intrinsic absorption layer on the substrate;
selectively etching the graded layer and the intrinsic absorption layer through photoetching and dry etching processes to expose the active region layer;
sequentially preparing buried tunnel junctions and a cover layer on the surface of the active region layer through epitaxy, photoetching and dry etching processes;
preparing a Zn diffusion layer on the surface of the intrinsic absorption layer through Zn diffusion to obtain a semiconductor laser transceiver chip;
preparing an insulating layer on the surface of the semiconductor laser transceiver chip;
after preparing an electrode window, a laser emission window and a laser receiving window on the insulating layer through photoetching and dry etching processes, enabling the insulating layer to cover the surface of the first reflecting mirror and contact with the side surface of the intrinsic absorption layer and the side surface of the cover layer, enabling the insulating layer to cover part of the surface of the intrinsic absorption layer and contact with the Zn diffusion layer, and enabling the laser receiving window to be opened on part of the surface of the Zn diffusion layer so as to form a laser receiving window;
preparing a surface electrode layer on the electrode window; preparing a second reflector layer on the laser emission window through a coating and wet etching process, so that the surface of the second reflector is exposed to form a laser emission window, wherein the surface electrode layer comprises a laser receiving area electrode layer and a laser emitting area electrode layer, the laser receiving area electrode layer is contacted with the Zn diffusion layer through the electrode window, and the laser emitting area electrode layer is respectively contacted with the surface of the cover layer, the side surface of the second reflector layer and the insulating layer positioned on the side surface of the cover layer;
and after thinning and polishing the back surface of the substrate, growing a back electrode layer.
Compared with the prior art, the technical scheme of the invention has the following advantages:
1. the invention provides a laser receiving and transmitting unit and an array chip of a human eye safety wave band, which greatly reduce the volume and the manufacturing cost of a system by integrating laser transmitting and receiving functions on the unit chip.
2. The invention provides a laser receiving and transmitting unit of a human eye safety wave band and an array chip, wherein a laser receiving area and an active area of a laser emitting area of the chip adopt the same quantum well structure, the detection wavelength range is narrower than that of a traditional detector, the detection wavelength range can be aligned with the laser emitting wavelength, and the detection precision and the anti-interference capability are improved.
3. The invention provides a laser receiving and transmitting unit and an array chip of a human eye safety wave band, and compared with near infrared wave band laser adopted in the prior art, signal laser adopted by the invention has the human eye safety characteristic.
Drawings
In order that the invention may be more readily understood, a more particular description of the invention will be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings.
Fig. 1 is a schematic cross-sectional view of a laser transceiver unit with an eye-safe band according to the present invention.
Fig. 2 is a top view of a laser transceiver unit of the present invention in a human eye safety band.
Fig. 3 is a top view of a laser transceiver array chip in a human eye safety band according to the present invention.
Description of the specification reference numerals:
101. a back electrode layer; 102. a substrate; 103. a first mirror layer; 104. an active region layer; 105. burying a tunnel junction; 106. a cover layer; 107. a gradual change layer; 108. an intrinsic absorption layer; 109. an insulating layer; 110. a Zn diffusion layer; 111. a second mirror layer; 112. a surface electrode layer;
201. a first chip mesa; 202. a laser receiving area; 203. a laser receiving area electrode layer; 204. a laser emitting region; 205. a laser emission region electrode layer;
301. a second chip mesa; 302. a laser receiving total area; 303. a second surface electrode; 304. a laser emission total area; 305. a first surface electrode.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific examples, which are not intended to be limiting, so that those skilled in the art will better understand the invention and practice it.
In the present invention, if directions (up, down, left, right, front and rear) are described, they are merely for convenience of description of the technical solution of the present invention, and do not indicate or imply that the technical features must be in a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the present invention, "a plurality of" means one or more, and "a plurality of" means two or more, and "greater than", "less than", "exceeding", etc. are understood to not include the present number; "above", "below", "within" and the like are understood to include this number. In the description of the present invention, the description of "first" and "second" if any is used solely for the purpose of distinguishing between technical features and not necessarily for the purpose of indicating or implying a relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the present invention, unless clearly defined otherwise, terms such as "disposed," "mounted," "connected," and the like should be construed broadly and may be connected directly or indirectly through an intermediate medium, for example; the connecting device can be fixedly connected, detachably connected and integrally formed; can be mechanically connected, electrically connected or capable of communicating with each other; may be a communication between two elements or an interaction between two elements. The specific meaning of the words in the invention can be reasonably determined by a person skilled in the art in combination with the specific content of the technical solution.
Example 1
Referring to fig. 1, a laser transceiver unit of a human eye safety band includes:
a substrate 102;
a first mirror layer 103 disposed on the surface of the substrate 102;
an active region layer 104 disposed on a portion of the surface of the first mirror layer 103;
the graded layer 107 is disposed on a part of the surface of the active region layer 104;
an intrinsic absorption layer 108 disposed on the surface of the graded layer 107;
a buried tunnel junction 105 disposed on a portion of the surface of the active region layer 104;
a cap layer 106 disposed on the surface of the buried tunnel junction 105;
a second mirror layer 111 disposed on the surface of the cap layer 106;
wherein the substrate 102, a portion of the first mirror layer, a portion of the active region layer 104, the buried tunnel junction 105, the cap layer 106, and the second mirror layer 111 together form a laser emitting region 204; the substrate 102, another part of the first mirror layer 103, another part of the active region layer 104, the graded layer 107, and the intrinsic absorption layer 108 together form a laser receiving region 202.
Specifically, the intrinsic absorption layer 108 is provided with a plurality of trenches, and a Zn diffusion layer 110 is provided in the trenches.
Specifically, the laser light emitting device further comprises an insulating layer 109, the insulating layer 109 covers the surface of the first reflecting mirror layer 103 and contacts with the side surface of the intrinsic absorption layer 108 and the side surface of the cover layer 106, the surface of the second reflecting mirror layer 111 is exposed to form a laser light emitting window, the insulating layer 109 also covers part of the surface of the intrinsic absorption layer 108 and contacts with the Zn diffusion layer 110, and the insulating layer 109 is provided with a window on part of the surface of the Zn diffusion layer 110 to form a laser light receiving window.
Specifically, the surface electrode layer 112 further includes a laser receiving area electrode layer 203 and a laser emitting area electrode layer 205, the laser receiving area electrode layer 203 penetrates through the insulating layer 109 and contacts the Zn diffusion layer 110, and the laser emitting area electrode layer 205 contacts the surface of the cap layer 106, the side surface of the second mirror layer 111, and the insulating layer 109 located on the side surface of the cap layer 106, respectively.
Specifically, the surface of the substrate 102 facing away from the first mirror layer 103 is provided with a back electrode layer 101.
Referring to fig. 2, the semiconductor laser transceiver unit includes a plurality of laser emission windows and a laser receiving window connected in series. In this embodiment, the semiconductor laser transceiver unit includes four laser emission windows and one laser receiving window connected in series, and the chip surface includes a first chip mesa 201, a laser receiving area 202, a laser receiving area electrode layer 203, a laser emitting area 204, and a laser emitting area electrode layer 205.
In this embodiment, the back electrode layer 101 is an N-type electrode, the surface electrode layer 112 is a P-type electrode, and the thicknesses of the two electrodes are 200-500 nm, and the material is an alloy material formed by titanium, platinum, gold, nickel, germanium and the like; the substrate 102 assembly is made of an N-type InP material.
The first reflecting mirror component adopts an N-type Distributed Bragg Reflector (DBR) reflecting mirror, and is specifically made of periodically grown InAlGaAs/InAlGaAs material, wherein the In component of each layer of material is 0.4-0.7, the Al component of each layer of material is 0.05-0.95, and the thickness of each layer of material is one fourthThe ratio of the wavelength of the emitted light to the refractive index of the material is specifically that one quarter of the wavelength of the emitted light is divided by the refractive index of the material, the logarithmic range of the period is 20-40 pairs (inclusive), and the total thickness range is 2-5 microns (inclusive). The doping agent is Si, and the doping concentration is 1E 16-8E 18/cm 3 。
The active region layer 104 is non-actively doped, is In a barrier/quantum well/barrier structure, is made of AlGaAs/InAlGaAs/AlGaAs, has an In component of 0.4-0.8, an Al component of 0-0.5, has a barrier thickness of 1-200 nanometers, has a quantum well thickness of 1-20 nanometers, and has a light-emitting wave band of 1500-1700 nanometers.
The buried tunnel junction 105 is a heavily doped PN junction structure, the P+ InAlGaAs material is arranged above the active region layer 104, the In component is 0.4-0.8, the Al component is 0-0.5, the thickness is 1-30 nanometers, and the doping concentration is 1E19/cm 3 -2 E20/cm 3 The doping agent is C or Be; the upper part of the P+ type InAlGaAs material is an N+ type InAlGaAs material, the In component is 0.4-0.8, the Al component is 0-0.5, the thickness is 1-30 nanometers, and the doping concentration is 1E19/cm 3 -2 E20/cm 3 The dopant is Si.
The material of the cap layer 106 is N-type InP with the thickness of 100-2000 nanometers and the doping concentration of 1E16/cm 3 -2 E18/cm 3 The dopant is Si.
The second mirror layer 111 is a Distributed Bragg Reflector (DBR) mirror, specifically a periodically grown ZnS/GaF2 dielectric thin film material. The thickness of each layer of material is the ratio of one quarter of the wavelength of the emitted light to the refractive index of the material, specifically the ratio of one quarter of the wavelength of the emitted light divided by the refractive index of the material, the period logarithmic range is 2-10 pairs (inclusive), and the total thickness range is 0.2-5 microns.
The material of the graded layer 107 is InGaAsP, the In component is 0.4-0.8, the P component is 0-0.5, the thickness is 1-300 nanometers, and the doping concentration is 1E17/cm 3 -2 E18/cm 3 The dopant is C.
The intrinsic absorption layer 108 is made of InP, with a thickness of 0.1-3 microns, and is undoped.
The Zn diffusion layer 110 is prepared by a Zn ion diffusion process, and the doping concentration is 1E17/cm 3 -2 E18/cm 3 The dopant is C.
The insulating layer 109 is made of SiO2 and has a thickness of 0.1-1 μm.
In the operation process of the semiconductor laser transceiver chip, by applying a forward bias voltage to the laser emission region 204, current is injected into the chip through the surface electrode layer 112 of the laser emission region 204, the buried tunnel junction 105 has the function of allowing current to pass, current cannot pass through the buried tunnel junction, current is injected into the active region layer 104 through the buried tunnel junction, stimulated radiation is generated in the active region layer 104 to form light amplification, photons oscillate between the first mirror layer 103 and the second mirror layer 111 and are continuously amplified by the active region layer 104, and laser emission is formed. The emitted laser light irradiates the surface of the object and then emits diffuse reflection, and part of the reflected light is received by the laser light receiving region 202 of the chip according to the present invention. Photons are absorbed by the intrinsic absorption layer 108 and enter the active region layer 104 by applying a reverse bias voltage to the laser receiving region 202, photons are absorbed by the active region layer 104 to generate photo-generated carriers under the action of an electric field, the carriers drift towards two side electrodes, and due to the fact that part of undoped intrinsic materials exist in the intrinsic absorption layer 108, the electric field intensity of the undoped part is high under the reverse bias voltage, avalanche ionization is formed in the region by the carriers, photocurrent is increased, photocurrent is finally formed between the back electrode layer 101 and the surface electrode layer 112, a current signal is reduced to a signal of a measured object through a special algorithm, and finally the sensing of the distance, the morphology and the like of the object is completed.
Example 2
Referring to fig. 3, the present embodiment provides a semiconductor laser transceiver array chip of a human eye safety band, which is formed by splicing a plurality of semiconductor laser transceiver units of a human eye safety band described in embodiment 1.
In this embodiment, the array chip includes 3 groups of identical laser emission total regions 304 and first surface electrodes 305 connected in series, which are disposed on the second chip mesa 301, and include 120 independent laser emission windows in total; and comprises 2 identical sets of total laser receiving regions 302 and second surface electrodes 303, comprising a total of 20 separate laser receiving windows.
According to the embodiment, the plurality of laser emission windows and the detection windows are adopted, so that the laser emission power can be greatly improved, and the detection distance and the detection precision are improved.
Example 3
The embodiment provides a manufacturing method of a laser transceiver unit of a human eye safety band, which comprises the following steps:
s1, providing a substrate 102;
s2, sequentially epitaxially growing a first reflector layer 103, an active region layer 104, a graded layer 107 and an intrinsic absorption layer 108 on the substrate 102 through epitaxial equipment, wherein the growth equipment is commercial MOCVD or MBE;
s3, selectively etching away the graded layer 107 and the intrinsic absorption layer 108 through photoetching and dry etching processes to expose the active region layer 104; specifically, by adopting the traditional photoetching and dry etching processes, part of the gradual change layer 107 and the intrinsic absorption layer 108 are etched on the surface of the substrate 102 on which the intrinsic absorption layer 108 is grown periodically, the etched area is a laser emitting area 204, the period length ranges from 300 micrometers to 5000 micrometers, and the period width ranges from 300 micrometers to 5000 micrometers;
s4, preparing buried tunnel junctions and a cover layer 106 on the surface of the active region layer 104 in sequence through epitaxial, photoetching and dry etching processes; removing the buried tunnel junction and the cap layer 106 grown on the surface of the laser receiving area 202 by adopting photoetching and dry etching processes; the growth equipment is commercial MOCVD or MBE;
s5, preparing a Zn diffusion layer 110 on the surface of the intrinsic absorption layer 108 through Zn diffusion, wherein the used equipment is commercial diffusion equipment; obtaining a semiconductor laser receiving and transmitting chip;
s6, preparing an insulating layer 109 on the surface of the semiconductor laser transceiver chip; the equipment is commercial PECVD equipment;
s7, after electrode windowing, laser emission windowing and laser receiving windowing are prepared on the insulating layer 109 through photoetching and dry etching processes, the insulating layer 109 covers the surface of the first reflecting mirror and contacts with the side surface of the intrinsic absorption layer 108 and the side surface of the cover layer 106, the insulating layer 109 also covers part of the surface of the intrinsic absorption layer 108 and contacts with the Zn diffusion layer 110, and the laser receiving windowing is formed on part of the surface of the Zn diffusion layer 110 so as to form a laser receiving window;
s8, preparing a surface electrode layer 112 on the electrode window, and preparing a light outlet by using a lift-off process; preparing a second mirror layer 111 at the laser emission window through a coating and wet etching process, so that the surface of the second mirror is exposed to form a laser emission window, wherein the surface electrode layer 112 comprises a laser receiving area electrode layer 203 and a laser emitting area electrode layer 205, the laser receiving area electrode layer 203 is contacted with the Zn diffusion layer 110 through the electrode window, and the laser emitting area electrode layer 205 is respectively contacted with the surface of the cap layer 106, the side surface of the second mirror layer 111 and the insulating layer 109 positioned on the side surface of the cap layer 106;
s9, after thinning and polishing the back surface of the substrate 102, growing a back electrode layer 101; the substrate 102 is in ohmic contact with an alloy process, so that a single semiconductor laser transceiver chip with a human eye safety band is formed.
Finally, it should be noted that the above-mentioned embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same, and although the present invention has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications and equivalents may be made to the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention, and all such modifications and equivalents are intended to be encompassed in the scope of the claims of the present invention.
Claims (10)
1. A laser transceiver unit for an eye-safe band, comprising:
a substrate (102);
a first mirror layer (103) provided on the surface of the substrate (102);
an active region layer (104) provided on a part of the surface of the first mirror layer (103);
the graded layer (107) is arranged on the surface of part of the active region layer (104);
an intrinsic absorption layer (108) provided on the surface of the graded layer (107);
a buried tunnel junction (105) disposed on a portion of the surface of the active region layer (104);
a cap layer (106) disposed on the surface of the buried tunnel junction (105);
a second mirror layer (111) provided on the surface of the cap layer (106);
wherein the substrate (102), a portion of the first mirror layer (103), a portion of the active region layer (104), the buried tunnel junction (105), the cap layer (106), and the second mirror layer (111) together form a laser emitting region (204);
the substrate (102), another part of the first mirror layer (103), another part of the active region layer (104), the graded layer (107), and the intrinsic absorption layer (108) together form a laser receiving region (202).
2. The laser transceiver unit of claim 1, wherein the intrinsic absorption layer (108) is provided with a plurality of grooves, and a Zn diffusion layer (110) is provided in the grooves.
3. The laser transceiver unit according to claim 2, further comprising an insulating layer (109), wherein the insulating layer (109) covers the surface of the first mirror layer (103) and contacts the side surface of the intrinsic absorption layer (108) and the side surface of the cover layer (106), the surface of the second mirror layer (111) is exposed to form a laser emission window, the insulating layer (109) also covers a part of the surface of the intrinsic absorption layer (108) and contacts the Zn diffusion layer (110), and the insulating layer (109) is provided with a window on a part of the surface of the Zn diffusion layer (110) to form a laser receiving window.
4. A laser transceiver unit of a human eye safety band according to claim 3, further comprising a surface electrode layer (112), said surface electrode layer (112) comprising a laser receiving region electrode layer (203) and a laser emitting region electrode layer (205), said laser receiving region electrode layer (203) penetrating said insulating layer (109) and being in contact with said Zn diffusion layer (110), said laser emitting region electrode layer (205) being in contact with the surface of said cap layer (106), the side of the second mirror layer (111) and said insulating layer (109) at the side of said cap layer (106), respectively.
5. The laser transmitter-receiver unit of claim 4, wherein said semiconductor laser transmitter-receiver unit comprises a plurality of laser transmitter windows and a laser receiver window in series.
6. A laser transceiver unit of the eye-safe band according to claim 1, characterized in that the surface of the substrate (102) facing away from the first mirror layer (103) is provided with a back electrode layer (101).
7. A laser transceiver unit of the eye-safe band according to claim 1, characterized in that the first mirror layer (103) and/or the first mirror layer (103) employs a distributed bragg mirror.
8. The laser transceiver unit of claim 1, wherein the active region layer (104) is a barrier/quantum well/barrier structure; the material of the gradual change layer (107) is InGaAsP; the intrinsic absorption layer (108) is made of InP; the buried tunnel junction (105) is a heavily doped PN junction structure; the material of the cover layer (106) is N-type InP.
9. A semiconductor laser transceiver array chip of a human eye safety band, wherein the array chip is formed by splicing a plurality of semiconductor laser transceiver units of the human eye safety band according to any one of claims 1 to 8.
10. The manufacturing method of the laser transceiver unit of the human eye safety wave band is characterized by comprising the following steps:
providing a substrate (102);
epitaxially growing a first mirror layer (103), an active region layer (104), a graded layer (107) and an intrinsic absorption layer (108) in sequence on the substrate (102);
selectively etching away the graded layer (107) and the intrinsic absorption layer (108) by photoetching and dry etching processes to expose the active region layer (104);
preparing a buried tunnel junction (105) and a cover layer (106) on the surface of the active region layer (104) in sequence through epitaxy, photoetching and dry etching processes;
preparing a Zn diffusion layer (110) on the surface of the intrinsic absorption layer (108) through Zn diffusion to obtain a semiconductor laser transceiver chip;
preparing an insulating layer (109) on the surface of the semiconductor laser transceiver chip;
after electrode windowing, laser emission windowing and laser receiving windowing are prepared on the insulating layer (109) through photoetching and dry etching processes, the insulating layer (109) covers the surface of the first reflecting mirror and is in contact with the side surface of the intrinsic absorption layer (108) and the side surface of the cover layer (106), the insulating layer (109) also covers part of the surface of the intrinsic absorption layer (108) and is in contact with the Zn diffusion layer (110), and the laser receiving windowing is formed on part of the surface of the Zn diffusion layer (110) so as to form a laser receiving window;
preparing a surface electrode layer (112) on the electrode window; preparing a second reflecting mirror layer (111) on the laser emission window through a coating and wet etching process, so that the surface of the second reflecting mirror is exposed to form a laser emission window, wherein the surface electrode layer (112) comprises a laser receiving area electrode layer (203) and a laser emitting area electrode layer (205), the laser receiving area electrode layer (203) is contacted with the Zn diffusion layer (110) through the electrode window, and the laser emitting area electrode layer (205) is respectively contacted with the surface of the cover layer (106), the side surface of the second reflecting mirror layer (111) and the insulating layer (109) positioned on the side surface of the cover layer (106);
and after thinning and polishing the back surface of the substrate (102), growing a back electrode layer (101).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410012637.6A CN117833015A (en) | 2024-01-04 | 2024-01-04 | Laser transceiver unit of human eye safety wave band, array chip and manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410012637.6A CN117833015A (en) | 2024-01-04 | 2024-01-04 | Laser transceiver unit of human eye safety wave band, array chip and manufacturing method |
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