CN117832218A

CN117832218A - Display panel, preparation method thereof and display device

Info

Publication number: CN117832218A
Application number: CN202211170560.2A
Authority: CN
Inventors: 王和金; 王品凡; 汪炳伟
Original assignee: BOE Technology Group Co Ltd
Current assignee: BOE Technology Group Co Ltd
Priority date: 2022-09-23
Filing date: 2022-09-23
Publication date: 2024-04-05

Abstract

The embodiment of the disclosure provides a display panel, a preparation method thereof and a display device. The display panel includes a display region including an island region including a pixel region and an edge region between the pixel region and the opening region, the display panel including: a flexible substrate positioned in the island region and the open hole region; the thin film transistor structure layer is positioned on one side of the flexible substrate and is positioned in the pixel area; the light-emitting structure layer is positioned on one side of the thin film transistor structure layer, which is away from the flexible substrate, and is positioned in the pixel area; and the insulating material composite layer is positioned in the edge area. The open pore region comprises a first open pore and a second open pore, wherein the first open pore penetrates through the insulating material composite layer to expose the flexible substrate, the second open pore penetrates through the flexible substrate, and the edge of the second open pore is positioned in the first open pore. The display panel of the embodiment of the disclosure can relieve stress concentration around an open pore area, is not easy to crack, is favorable for improving the tensile property of the display panel, and prevents the problem of integral damage of devices after expansion.

Description

Display panel, preparation method thereof and display device

Technical Field

The application relates to the technical field of display, in particular to a display panel, a preparation method thereof and a display device.

Background

An organic light-emitting diode (organic light-EmittingDiode, OLED) display, which is also called an organic electroluminescent display, has the advantages of low power consumption, high light-emitting brightness, wide working temperature application range, light and thin volume, high response speed, easy realization of color display and large-screen display, easy realization of flexible display and the like, and has wide application prospect. In recent years, with the development of organic light emitting display technology, a flexible display device that is foldable and rollable has received attention. In the current flexible display device, a stretching structure is generally provided to relieve stress generated during deformation such as folding and curling.

In stretchable displays, because the display panel has a limited amount of stretchability, the stretchable display device can be developed using existing equipment and processes, typically in a manner that the fully elastic intrinsically stretchable and open cell structure is stretchable. In the mode that the open pore structure is stretchable, the strain born by the edge of the open pore is maximum, and cracking is easy to occur, so that the whole device is damaged after expansion.

Disclosure of Invention

The embodiment of the application provides a display panel, a preparation method thereof and a display device, which are used for solving or relieving one or more technical problems in the prior art.

As a first aspect of embodiments of the present disclosure, embodiments of the present disclosure provide a display panel including a display region including an island region and an opening region, the island region including a pixel region and an edge region between the pixel region and the opening region, the display panel including:

a flexible substrate positioned in the island region and the open hole region;

the thin film transistor structure layer is positioned on one side of the flexible substrate and is positioned in the pixel area;

the light-emitting structure layer is positioned on one side of the thin film transistor structure layer, which is away from the flexible substrate, and is positioned in the pixel area;

the insulating material composite layer is positioned in the edge area and comprises an inorganic layer;

the open pore area comprises a first open pore and a second open pore, the first open pore penetrates through the insulating material composite layer to expose the flexible substrate, the second open pore penetrates through the flexible substrate, and the edge of the second open pore is located in the first open pore.

In one embodiment, the distance between the edge of the first aperture and the edge of the second aperture is greater than or equal to 0.5 μm.

In one embodiment, the flexible substrate further comprises a metal sacrificial residual layer, the metal sacrificial residual layer is located between the flexible substrate and the insulating material composite layer, the metal sacrificial residual layer is located in the edge region, the metal sacrificial residual layer is located along the edge of the first opening, and the side face of the metal sacrificial residual layer facing the first opening is exposed through the first opening.

In one embodiment, the distance between the boundary of the metal sacrificial residual layer on the side remote from the first opening and the boundary of the first opening is greater than or equal to 0.5 μm.

In one embodiment, the composite layer of insulating material comprises an organic layer.

In one embodiment, the display panel includes a thin film transistor and an inorganic layer between electrode layers of the thin film transistor, the thin film transistor is located in a pixel region, the inorganic layer is located in the pixel region and an edge region, the display panel further includes a flat layer located on a side of the thin film transistor facing away from the flexible substrate, the flat layer is located in the pixel region and the edge region, the light emitting structure layer is located on a side of the flat layer facing away from the flexible substrate, the light emitting structure layer includes an organic light emitting diode device, the display panel further includes a packaging layer located on a side of the organic light emitting diode device facing away from the flexible substrate, and the packaging layer is located in the pixel region and the edge region.

As a second aspect of embodiments of the present disclosure, embodiments of the present disclosure provide a method for manufacturing a display panel, the display panel including a display region including an island region and an opening region, the island region including a pixel region and an edge region between the pixel region and the opening region, the method including:

forming a first metal sacrificial layer on one side of the flexible substrate, wherein the first metal sacrificial layer is at least positioned in the open hole area, the first metal sacrificial layer is provided with a first hollow, the first hollow falls into the open hole area, and the distance between the outer boundary of the first metal sacrificial layer and the boundary of the open hole area is greater than or equal to 0;

sequentially forming a thin film transistor structure layer, a light-emitting structure layer and a packaging layer on one side of the first metal sacrificial layer, which is far away from the flexible substrate, wherein the thin film transistor structure layer and the light-emitting structure layer are both positioned in a pixel area, and the packaging layer is at least positioned in the pixel area;

forming an insulating material composite layer positioned in the edge area and the open pore area in the process of forming the thin film transistor structure layer, the light-emitting structure layer and the packaging layer;

removing the insulating material composite layer in the open hole area by adopting a first etching process to form a first open hole, wherein the part of the first metal sacrificial layer in the open hole area is exposed through the first open hole, and the flexible substrate is exposed through the first hollowed-out part and the first open hole;

removing the flexible substrate exposed through the first hollowed-out part by adopting the first metal sacrificial layer as a mask and adopting a second etching process to form a second opening;

and removing the first metal sacrificial layer exposed through the first opening by adopting a third etching process.

In one embodiment, a first etching process is used to remove the insulating material composite layer in the opening area to form a first opening, including:

depositing a second metal sacrificial layer on one side of the packaging layer away from the flexible substrate;

patterning the second metal sacrificial layer to form a second hollow penetrating through the second metal sacrificial layer;

and removing the insulating material composite layer exposed by the second hollowed-out part by adopting a first etching process by taking the second metal sacrificial layer as a mask to form a first opening.

In one embodiment, removing the first metal sacrificial layer exposed through the first opening using a third etching process includes:

and removing the second metal sacrificial layer and the first metal sacrificial layer exposed through the first opening by adopting a wet etching process, wherein the third etching process is a wet etching process.

In one embodiment, the second etching process is an oxygen dry etching process.

As a third aspect of the embodiments of the present disclosure, the embodiments of the present disclosure provide a display device including the display panel in the embodiments of the present disclosure.

By adopting the technical scheme, the insulating material composite layer comprises an inorganic layer, and the insulating material composite layer is retracted relative to the flexible substrate in the open area, so that the inorganic layer is retracted relative to the flexible substrate. By the structure, in the stretching process of the display panel, stress concentration of the periphery of the open hole area to the inorganic layer can be relieved, the cracking risk of the inorganic layer is effectively reduced, the integral damage risk of the display panel caused by the cracking of the inorganic layer is reduced, and the stretching performance of the display panel is improved.

The foregoing summary is for the purpose of the specification only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features of the present application will become apparent by reference to the drawings and the following detailed description.

Drawings

In the drawings, the same reference numerals refer to the same or similar parts or elements throughout the several views unless otherwise specified. The figures are not necessarily drawn to scale. It is appreciated that these drawings depict only some embodiments according to the disclosure and are not therefore to be considered limiting of its scope.

FIG. 1 is a schematic plan view of an OLED display panel;

FIG. 2 is a schematic view of a cross-sectional structure A-A of the display panel shown in FIG. 1 in an embodiment of the present disclosure;

FIG. 3 is a schematic view of a cross-sectional A-A structure of the display panel shown in FIG. 1 in another embodiment of the present disclosure;

FIG. 4 is a schematic diagram of a display panel according to an embodiment of the disclosure after forming a first metal sacrificial layer, a light shielding layer, and a sensor pattern layer;

FIG. 5 is a schematic diagram of a display panel according to an embodiment of the present disclosure after forming a thin film transistor structure layer, a light emitting structure layer and a packaging layer;

FIG. 6 is a schematic diagram of a display panel according to an embodiment of the disclosure after forming a first opening;

fig. 7 is a schematic diagram of a display panel according to an embodiment of the disclosure after forming a second opening.

Reference numerals illustrate:

11. island regions; 111. a pixel region; 112. an edge region; 12. an opening area; 121. a first opening; 122. a second opening; 13. a bridge region; 131. a wiring area; 132. an edge region;

21. a flexible substrate; 22. a thin film transistor structure layer; 221. an active layer; 222. a first gate insulating layer; 223. a second gate insulating layer; 224. a source/drain metal layer; 225. a first gate electrode; 226. a second gate electrode; 23. a flat layer; 24. a light emitting structure layer; 241. a first electrode layer; 242. a light emitting layer; 243. a second electrode layer; 25. an encapsulation layer; 26. an interlayer insulating layer; 27. a pixel definition layer; 28. a light shielding layer; 29. a sensor pattern layer; 31. a first metal sacrificial layer; 32. a second metal sacrificial layer.

Detailed Description

Hereinafter, only certain exemplary embodiments are briefly described. As will be recognized by those of skill in the pertinent art, the described embodiments may be modified in various different ways without departing from the spirit or scope of the present application. Accordingly, the drawings and description are to be regarded as illustrative in nature and not as restrictive.

Fig. 1 is a schematic plan view of an OLED display panel. In the related art, as shown in fig. 1, an OLED display panel is stretchable by using an open-cell structure. The OLED display panel may include an island region 11, a bridge region 13, and an open region 12, where the island region 11 is used to set light emitting sub-pixels and control circuits, the bridge region 13 is used to set metal wires, such as power lines, signal lines, etc., connecting adjacent island regions, and the open region 12 reserves a space for deformation.

The stretchable OLED display panel uses a flexible material such as polyimide as a substrate, and in the related art, the stretching amount of the stretchable OLED is not high. According to the research of the inventor, in the stretchable OLED display panel in the related art, the edge of the inorganic layer in the open hole area is easy to crack, and the crack is expanded to cause integral damage.

FIG. 2 is a schematic view of a cross-sectional structure A-A of the display panel shown in FIG. 1 in an embodiment of the present disclosure; FIG. 3 is a schematic view of a cross-sectional view of the display panel shown in FIG. 1 in another embodiment of the present disclosure. As shown in fig. 2 and 3, the embodiment of the present disclosure provides a display panel including a display region including an island region 11 and an opening region 12, the island region 11 including a pixel region 111 and an edge region 112 between the pixel region 111 and the opening region 12.

Specifically, the display panel includes: a flexible substrate 21, a thin film transistor structure layer 22, a light emitting structure layer 24, and an insulating material composite layer. The flexible substrate 21 is located in the island region 11 and the open region 12; the thin film transistor structure layer 22 is located at one side of the flexible substrate 21 and located at the pixel region 111; the light emitting structure layer 24 is located on a side of the thin film transistor structure layer 22 facing away from the flexible substrate 21 and is located in the pixel region 111; the insulating material composite layer is located in the edge region 112 and includes an inorganic layer.

The open area 12 includes a first opening 121 and a second opening 122, the first opening 121 penetrates through the insulating material composite layer to expose the flexible substrate 21, the second opening 122 penetrates through the flexible substrate 21, and an edge of the second opening 122 is located in the first opening 121.

It should be noted that the tft structure layer 22 may include a plurality of tfts, and may further include a plurality of metal wires connected to the tfts, such as data wires, gate wires, power wires, etc.

Illustratively, the composite layer of insulating material comprises a plurality of layers of insulating material arranged in a stack. The insulating material composite layer may include an inorganic layer. Illustratively, the insulating material composite layer may further include an organic layer.

In the display panel of the embodiment of the present disclosure, the insulating material composite layer includes an inorganic layer, and in the open hole region 12, the insulating material composite layer is retracted with respect to the flexible substrate 21, and thus, the inorganic layer is retracted with respect to the flexible substrate 21. By the structure, in the stretching process of the display panel, stress concentration of the inorganic layer around the open hole area 12 can be relieved, the cracking risk of the inorganic layer is effectively reduced, the integral damage risk of the display panel caused by the cracking of the inorganic layer is reduced, and the stretching performance of the display panel is improved.

Illustratively, the bridge region 13 may include trace regions 131 and edge regions 132 between trace region aperture regions 12. The trace region 131 is used for providing metal traces, such as power lines, signal lines, etc., connecting adjacent islands. Illustratively, the edge region 132 may be of the same structure as the edge region 112, that is, the edge region may be disposed around the periphery of the open area 12.

FIG. 3 is a schematic view of a cross-sectional view of the display panel shown in FIG. 1 in another embodiment of the present disclosure. As shown in fig. 3, in one embodiment, the distance D1 between the edge of the first aperture 121 and the edge of the second aperture 122 is greater than or equal to 0.5 μm. In this way, the inorganic layer in the insulating material composite layer can be retracted by a distance of more than or equal to 0.5 μm relative to the flexible substrate 21, so that the stress concentration of the inorganic layer around the open hole region 12 can be better relieved, and the tensile property of the display panel can be further improved.

In one embodiment, D1 may be greater than or equal to 1 μm as shown in fig. 3 to further mitigate stress concentrations on the inorganic layer during stretching, reducing the risk of cracking of the inorganic layer.

As shown in fig. 2, in one embodiment, the metal sacrificial residual layer 31 is further included, the metal sacrificial residual layer 31 is located between the flexible base 21 and the insulating material composite layer, the metal sacrificial residual layer 31 is located at the edge region 112, the metal sacrificial residual layer 31 is disposed along the edge of the first opening 121, and the side of the metal sacrificial residual layer 31 facing the first opening 121 is exposed through the first opening 121.

In one embodiment, a distance (refer to D2 shown in fig. 3) between a boundary of the metal sacrificial residual layer 31 on a side away from the first opening 121 and a boundary of the first opening 121 is greater than or equal to 0.5 μm.

In one embodiment, the display panel includes a thin film transistor and an inorganic layer between respective electrode layers of the thin film transistor, the thin film transistor is located in the pixel region 111, the inorganic layer is located in the pixel region 111 and the edge region 112, the display panel further includes a planarization layer 23, the planarization layer 23 is located on a side of the thin film transistor facing away from the flexible substrate 21, the planarization layer 23 is located in the pixel region 111 and the edge region 112, the light emitting structure layer 24 is located on a side of the planarization layer 23 facing away from the flexible substrate 21, the light emitting structure layer 24 includes an organic light emitting diode device, the display panel further includes an encapsulation layer 25, the encapsulation layer 25 is located on a side of the organic light emitting diode device facing away from the flexible substrate 21, and the encapsulation layer 25 is located in the pixel region 111 and the edge region 112.

The technical scheme of the embodiments of the present disclosure is described in detail below by a specific structure of a display panel. In the embodiment of the present disclosure, the insulating material composite layer includes an inorganic layer, which may include a film layer formed of an inorganic material such as the inorganic encapsulation layer 25, the first gate insulating layer, the second gate insulating layer, and the like.

In one embodiment, as shown in fig. 1, the display panel may include a display region, which may include an island region 11 and an opening region 12, and the island region 11 includes a pixel region 111 and an edge region 112 between the pixel region 111 and the opening region 12. The display panel may further include a flexible substrate 21, a thin film transistor structure layer 22, a light emitting structure layer 24, and an insulating material composite layer. The flexible substrate 21 is located in the island region 11 and the open region 12; the thin film transistor structure layer 22 is located at one side of the flexible substrate 21 and located at the pixel region 111; the light emitting structure layer 24 is located on a side of the thin film transistor structure layer 22 facing away from the flexible substrate 21, and is located in the pixel region 1111; the composite layer of insulating material is located in the edge region 112.

Illustratively, the material of the flexible substrate 21 may include a polymer resin, for example, the material of the flexible substrate 21 may include one or more of Polyethersulfone (PES), polyacrylate (PA), polyarylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyallylate (polyallylate), polyimide (PI), polycarbonate (PC), cellulose triacetate (CAT), cellulose Acetate Propionate (CAP), and the like.

In one embodiment, as shown in fig. 5 and 6, the thin film transistor structure layer 2222 includes an active layer 221, a first gate insulating layer 222, a first gate electrode 225, a second gate insulating layer 223, a second gate electrode 226, and a source-drain metal layer 224, which are sequentially disposed on one side of the flexible substrate.

The first gate insulating layer 222 and the second gate insulating layer 223 may be single-layer or multi-layer composite layers of inorganic insulating materials such as silicon oxide, silicon nitride, and silicon oxynitride, respectively.

Illustratively, the first gate electrode 225, the second gate electrode 226, and the source-drain metal layer may be made of a metal material, such as any one or more of silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo), or an alloy material of the above metals, such as aluminum neodymium (AlNd) or molybdenum niobium (MoNb), and may be a single-layer structure, or a multi-layer composite structure, such as Ti/Al/Ti, and the like. The active layer 221 may be made of polysilicon, amorphous silicon, an oxide semiconductor, an organic semiconductor, or the like.

The thin film transistor shown in fig. 5 is a top gate thin film transistor. Those skilled in the art will appreciate that bottom gate thin film transistors are equally applicable to the aspects of the present disclosure.

In one embodiment, the display panel may further include a first metal layer, which is a metal layer between the flexible substrate 21 and the buffer layer. A light shielding layer 28 and a sensor pattern layer 29 are also formed on the flexible base, the light shielding layer 28 being provided in the same layer as the metal layer, and the light shielding layer 28 being used for shielding the active layer 221 from light. It should be understood that the sensor pattern layer 29 may be provided with a desired sensor and its connection relationship according to need, and is not particularly limited herein.

Illustratively, the insulating material composite layer may include a first gate insulating layer 222. The insulating material composite layer may include a second gate insulating layer 223. The composite layer of insulating material may include an interlayer insulating layer 26.

In one embodiment, the light emitting device further includes a planarization layer 23, where the planarization layer 23 is located on a side facing away from the flexible substrate 21 and between the light emitting structure layer 24 and the source drain metal layer 224. Illustratively, the composite layer of insulating material may include a planar layer 23.

Illustratively, the material of the planarization layer 23 may be an organic insulating material, for example, the material of the planarization layer 23 may include one or more of polyimide, polyamide, acrylic, benzocyclobutene (BCB), and phenolic resin.

In one embodiment, the light emitting structure layer 24 includes a first electrode layer 241, a light emitting layer 242, and a second electrode layer 243 sequentially stacked on a side of the source/drain metal layer 224 facing away from the flexible substrate 21. Illustratively, the light emitting structure layer 24 may be disposed on the planarization layer 23. The display panel may further include a pixel defining layer 27, and the pixel defining layer 27 may define an area where the light emitting structure layer 24 is located. Illustratively, the insulating material composite layer may include a pixel definition layer 27.

In one embodiment, the display panel further includes an encapsulation layer 25, the encapsulation layer 25 being located on a side of the second electrode layer 243 facing away from the flexible substrate 21. Illustratively, the composite layer of insulating material may include an encapsulation layer 25.

Illustratively, the encapsulation layer 25 may include a first inorganic encapsulation layer 25, an organic encapsulation layer 25, and a second inorganic encapsulation layer 25, which are sequentially stacked. The material of the inorganic encapsulation layer 25 may include one or more of silicon nitride, silicon oxynitride, and silicon oxide. The inorganic encapsulation layer 25 may effectively prevent oxygen and moisture from penetrating into the light emitting structure layer 24.

Illustratively, the material of the organic encapsulation layer 25 may include one or more of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin. The organic encapsulation layer 25 may protect the light emitting structure layer 24 in the display panel from foreign substances such as dust.

In one embodiment, a metal sacrificial residual layer is further included, the metal sacrificial residual layer is located between the flexible base and the inorganic insulating layer, the metal sacrificial residual layer is located at the edge region 112, the metal sacrificial residual layer is located along the edge of the first opening 121, and a side of the metal sacrificial residual layer facing the first opening 121 is exposed through the first opening 121.

The structure of the display panel is only exemplarily shown in the above embodiments, and it is to be understood that the structure of the display panel is not limited to the structure in the above embodiments as long as the flexible substrate 21 is exposed through the first opening 121 and the edge of the second opening 122 is located within the first opening 121.

The embodiment of the disclosure also provides a method for manufacturing a display panel, where the display panel includes a display area, the display area includes an island area 11 and an opening area 12, the island area 11 includes a pixel area 111 and an edge area 112 located between the pixel area 111 and the opening area 12, and the method includes:

forming a first metal sacrificial layer 31 on one side of the flexible substrate 21, wherein the first metal sacrificial layer 31 is at least positioned in the open hole area 12, the first metal sacrificial layer 31 is provided with a first hollow, the first hollow falls into the open hole area 12, and the distance between the outer boundary of the first metal sacrificial layer 31 and the boundary of the open hole area 12 is greater than or equal to 0;

a thin film transistor structure layer 22, a light emitting structure layer 24 and a packaging layer 25 are sequentially formed on one side of the first metal sacrificial layer 31, which is far away from the flexible substrate 21, wherein the thin film transistor structure layer 22 and the light emitting structure layer 24 are both positioned in the pixel region 111, and the packaging layer 25 is at least positioned in the pixel region 111;

in the process of forming the thin film transistor structure layer 22, the light emitting structure layer 24 and the encapsulation layer 25, an insulating material composite layer located in the edge region 112 and the opening region 12 is formed;

removing the insulating material composite layer located in the open hole area 12 by a first etching process to form a first open hole 121, wherein a part of the first metal sacrificial layer 31 located in the open hole area 12 is exposed through the first open hole 121, and the flexible substrate 21 is exposed through the first hollow and the first open hole 121;

the first metal sacrificial layer 31 is used as a mask, and a second etching process is used for removing the flexible substrate 21 exposed through the first hollowed-out part to form a second opening 122;

the first metal sacrificial layer 31 exposed through the first opening 121 is removed using a third etching process.

In one embodiment, a first etching process is used to remove the composite layer of insulating material in the open area 12 to form the first opening 121, including: depositing a second sacrificial metal layer 32 on the side of the encapsulation layer 25 facing away from the flexible substrate 21; patterning the second metal sacrificial layer 32 to form a second hollow penetrating through the second metal sacrificial layer 32; the second metal sacrificial layer 32 is used as a mask, and a first etching process is used to remove the insulating material composite layer exposed by the second hollow out to form the first opening 121.

In one embodiment, removing the first metal sacrificial layer 31 exposed through the first opening 121 using the third etching process includes: the second metal sacrificial layer 32 and the first metal sacrificial layer 31 exposed through the first opening 121 are removed using a wet etching process, and the third etching process is a wet etching process.

The technical solutions of the embodiments of the present disclosure are further described below through the manufacturing process of the display panel shown in fig. 4 to 7. It should be understood that, as used herein, the term "patterning" includes processes such as photoresist coating, mask exposure, development, etching, photoresist stripping, etc. when the patterned material is inorganic or metal, and processes such as mask exposure, development, etc. when the patterned material is organic, evaporation, deposition, coating, etc. are all well-known processes in the related art.

S11, forming a first metal sacrificial layer 31 on one side of the flexible substrate 21, wherein the first metal sacrificial layer 31 is at least located in the open hole area 12, the first metal sacrificial layer 31 is provided with a first hollow, the first hollow falls into the open hole area 12, and the distance between the outer boundary of the first metal sacrificial layer 31 and the boundary of the open hole area 12 is greater than or equal to 0, and the steps comprise:

as shown in fig. 4, a first metal layer is deposited on one side of the flexible substrate 21, and patterned to form a first metal sacrificial layer 31, and a first hollow is formed on the first metal sacrificial layer 31, so that a first hollow hole falls into the open hole region 12, and a distance (D2) between an outer boundary of the formed first metal sacrificial layer 31 and a boundary of the open hole region 12 is required to be greater than or equal to 0. Setting D2 to 0 or more can ensure that the first metal sacrificial layer 31 shields the flexible substrate 21 at the edge portion of the first opening 121, avoiding subsequent etching to the flexible substrate 21 near the edge of the first opening 121 when the second opening 122 is formed by etching.

Illustratively, a light shielding layer 28 and a sensor pattern layer 29 are also formed on the flexible substrate, the light shielding layer 28 being arranged in the same layer as the metal layer, the light shielding layer 28 being used for shielding the active layer 221 from light.

S12, sequentially forming a thin film transistor structure layer 22, a light emitting structure layer 24 and a packaging layer 25 on a side of the first metal sacrificial layer 31 facing away from the flexible substrate 21, where the thin film transistor structure layer 22 and the light emitting structure layer 24 are both located in a pixel area 111, and the packaging layer 25 is located in at least the pixel area 111, the steps include:

as shown in fig. 5, an active layer 221 is formed on a side of the first metal sacrificial layer 31 facing away from the flexible substrate 21, and then a first gate insulating layer 222 is formed on a side of the active layer 221 facing away from the flexible substrate 21, and a first gate electrode 225 is provided on the first gate insulating layer 222. A second gate insulating layer 223 is formed on a side of the first gate insulating layer 222 facing away from the flexible substrate 21, and a second gate electrode 226 is provided on the second gate insulating layer 223. A source-drain metal layer 224 is formed on a side of the second gate insulating layer 223 facing away from the flexible substrate 21. The first electrode layer 241 is formed on the side of the source-drain metal layer 224 facing away from the flexible substrate 21. A light emitting layer 242 is formed on a side of the first electrode layer 241 facing away from the flexible substrate 21. A second electrode layer 243 is formed on a side of the light emitting layer 242 facing away from the flexible substrate 21. The encapsulation layer 25 is formed on the side of the second electrode layer 243 facing away from the flexible substrate 21.

In forming the thin film transistor structure layer 2222, the light emitting structure layer 24, and the encapsulation layer 25, a composite layer of insulating material is formed at the edge region 112 and the opening region 12. Illustratively, the insulating material composite layer may include a first gate insulating layer 222, a second gate insulating layer 223, an interlayer insulating layer 26, and may further include a planarization layer 23, a pixel defining layer 27, and an encapsulation layer 25.

S13, removing the insulating material composite layer located in the open hole area 12 by a first etching process to form a first open hole 121, exposing a portion of the first metal sacrificial layer 31 located in the open hole area 12 through the first open hole 121, and exposing the flexible substrate 21 through the first hollow and the first open hole 121, where the steps include:

as shown in fig. 6, a second sacrificial metal layer 32 is deposited on the side of the encapsulation layer 25 facing away from the flexible substrate 21; the second metal sacrificial layer 32 is patterned to form a second hollow through the second metal sacrificial layer 32. Illustratively, the boundary of the second void may coincide with the boundary of the open area 12.

Then, the second metal sacrificial layer 32 is used as a mask, and the insulating material composite layer exposed by the second hollow is removed by a first etching process to form a first opening 121, at this time, the first metal sacrificial layer 31 located in the opening area 12 is exposed through the first opening 121, and the flexible substrate 21 is exposed through the first hollow and the first opening 121.

S14, the first metal sacrificial layer 31 is used as a mask, and a second etching process is used to remove the flexible substrate 21 exposed through the first hollow out to form a second opening 122.

After the first metal sacrificial layer 31 located in the opening area 12 is exposed through the first opening 121, the flexible substrate 21 exposed through the first hollow is removed by using the first metal sacrificial layer 31 as a mask and adopting a second etching process, so as to form the second opening 122. The second etching process may be an oxygen dry etching method.

S15, removing the first metal sacrificial layer 31 exposed through the first opening by using a third etching process.

As shown in fig. 7, the first metal sacrificial layer 31 and the second metal sacrificial layer 32 exposed through the first opening 121 are removed using a third etching process, thereby completing the fabrication of the stretchable display panel. Wherein the third etching process is a wet etching process. The remaining portion of the first metal sacrificial layer 31 is a metal sacrificial remaining layer. When the first metal sacrificial layer 31 is removed, a pit is formed on the inner sidewall of the first opening 121, and the pit corresponds to the position of the metal sacrificial layer. The pit is formed by a small pit formed by too long wet etching time, and the pit is not filled, so that the subsequent preparation process is not affected.

In the display panel manufactured by the above manufacturing method, the insulating material composite layer includes the inorganic layer, and the insulating material composite layer is retracted relative to the flexible substrate 21 in the opening area 12, so that the inorganic layer is retracted relative to the flexible substrate 21. By the structure, in the stretching process of the display panel, stress concentration of the inorganic layer around the open hole area 12 can be relieved, the cracking risk of the inorganic layer is effectively reduced, the integral damage risk of the display panel caused by the cracking of the inorganic layer is reduced, and the stretching performance of the display panel is improved.

Based on the inventive concept of the foregoing embodiments, the present disclosure also provides a display device including the display panel of the foregoing embodiments. The display device may be a stretchable display device, and the display device may be: any product or component with display function such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.

Other configurations of the display panel of the above embodiments may be applied to various technical solutions now and in the future known to those skilled in the art, and will not be described in detail herein.

In the description of the present specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.

Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.

In this application, unless specifically stated and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; the device can be mechanically connected, electrically connected and communicated; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.

In this application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, and may also include the first and second features not being in direct contact but being in contact with each other by way of additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is less level than the second feature.

The above disclosure provides many different embodiments or examples for implementing different structures of the present application. The components and arrangements of specific examples are described above in order to simplify the disclosure of this application. Of course, they are merely examples and are not intended to limit the present application. Furthermore, the present application may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not in themselves indicate the relationship between the various embodiments and/or arrangements discussed.

The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think of various changes or substitutions within the technical scope of the present application, and these should be covered in the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A display panel comprising a display region, the display region comprising an island region and an aperture region, the island region comprising a pixel region and an edge region between the pixel region and the aperture region, the display panel comprising:

a flexible substrate positioned in the island region and the open region;

an insulating material composite layer located in the edge region, the insulating material composite layer comprising an inorganic layer;

the opening area comprises a first opening and a second opening, the first opening penetrates through the insulating material composite layer to expose the flexible substrate, the second opening penetrates through the flexible substrate, and the edge of the second opening is located in the first opening.

2. The display panel of claim 1, wherein a distance between an edge of the first aperture and an edge of the second aperture is greater than or equal to 0.5 μιη.

3. The display panel of claim 1, further comprising a metal sacrificial residual layer between the flexible base and the insulating material composite layer, the metal sacrificial residual layer being located at the edge region, the metal sacrificial residual layer being disposed along an edge of the first aperture, and a side of the metal sacrificial residual layer facing the first aperture being exposed through the first aperture.

4. A display panel according to claim 3, wherein the distance between the boundary of the metal sacrificial residual layer on the side away from the first opening and the boundary of the first opening is greater than or equal to 0.5 μm.

5. The display panel of claim 1, wherein the insulating material composite layer comprises an organic layer.

6. The display panel of claim 1, wherein the display panel comprises a thin film transistor and an inorganic layer between respective electrode layers of the thin film transistor, the thin film transistor is located in the pixel region, the inorganic layer is located in the pixel region and the edge region, the display panel further comprises a flat layer located on a side of the thin film transistor facing away from the flexible substrate, the flat layer is located in the pixel region and the edge region, the light emitting structure layer is located on a side of the flat layer facing away from the flexible substrate, the light emitting structure layer comprises an organic light emitting diode device, and the display panel further comprises an encapsulation layer located on a side of the organic light emitting diode device facing away from the flexible substrate, the encapsulation layer being located in the pixel region and the edge region.

7. A method of manufacturing a display panel, the display panel comprising a display region, the display region comprising an island region and an aperture region, the island region comprising a pixel region and an edge region between the pixel region and the aperture region, the method comprising:

forming a first metal sacrificial layer on one side of a flexible substrate, wherein the first metal sacrificial layer is at least positioned in the open pore area, the first metal sacrificial layer is provided with a first hollow, the first hollow falls into the open pore area, and the distance between the outer boundary of the first metal sacrificial layer and the boundary of the open pore area is greater than or equal to 0;

sequentially forming a thin film transistor structure layer, a light-emitting structure layer and a packaging layer on one side of the first metal sacrificial layer, which is far away from the flexible substrate, wherein the thin film transistor structure layer and the light-emitting structure layer are both positioned in the pixel region, and the packaging layer is at least positioned in the pixel region;

forming an insulating material composite layer positioned in the edge area and the open hole area in the process of forming the thin film transistor structure layer, the light-emitting structure layer and the packaging layer;

removing the insulating material composite layer in the open hole area by adopting a first etching process to form a first open hole, wherein the part of the first metal sacrificial layer in the open hole area is exposed through the first open hole, and the flexible substrate is exposed through the first hollow and the first open hole;

8. The method of claim 7, wherein removing the composite layer of insulating material in the open area to form a first opening using a first etching process comprises:

depositing a second metal sacrificial layer on one side of the encapsulation layer away from the flexible substrate;

and removing the insulating material composite layer exposed by the second hollowed-out part by adopting the first etching process by adopting the second metal sacrificial layer as a mask so as to form the first opening.

9. The method of claim 8, wherein removing the first metal sacrificial layer exposed through the first opening using a third etching process comprises:

and removing the second metal sacrificial layer and the first metal sacrificial layer exposed through the first opening by adopting a wet etching process, wherein the third etching process is the wet etching process.

10. The method of claim 7, wherein the second etching process is an oxygen dry etching process.

11. A display device comprising the display panel according to any one of claims 1 to 6.