CN117832172A - Wafer separating method and wafer processing device - Google Patents

Wafer separating method and wafer processing device Download PDF

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Publication number
CN117832172A
CN117832172A CN202311751680.6A CN202311751680A CN117832172A CN 117832172 A CN117832172 A CN 117832172A CN 202311751680 A CN202311751680 A CN 202311751680A CN 117832172 A CN117832172 A CN 117832172A
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China
Prior art keywords
wafer
cutter
face
movable assembly
end surface
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CN202311751680.6A
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Chinese (zh)
Inventor
杨深明
方浩全
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MGA Technology Shenzhen Co Ltd
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MGA Technology Shenzhen Co Ltd
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Priority to CN202311751680.6A priority Critical patent/CN117832172A/en
Publication of CN117832172A publication Critical patent/CN117832172A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention discloses a wafer separation method, which comprises the following steps: supporting the wafer to be processed with the pre-crack on a supporting platform, wherein the first end face of the wafer faces upwards, and processing the wafer by a cutter along a first preset position of the first end face of the wafer; and adjusting the height of the supporting platform, supporting the wafer on the supporting platform again, enabling the second end surface of the wafer to face upwards, and processing the wafer by the cutter along a second preset position of the second end surface of the wafer so as to finish the processing of the wafer. The wafer separation method of the invention avoids mechanical deformation and concentrated stress release caused by cutting wafers by mechanical processing, does not generate cutter abrasion and dust pollution, does not need pure water to clean the wafers, and therefore, does not generate sewage and saves cost. The invention also provides a wafer processing device.

Description

Wafer separating method and wafer processing device
Technical Field
The present invention relates to the field of wafer processing technology, and in particular, to a wafer separating method and a wafer processing apparatus.
Background
With the continuous advancement of industry structures and energy structure adjustment in China, renewable energy is greatly developed, china strives for realizing carbon peak before 2030 and carbon neutralization before 2060, new energy industry has a strong demand for semiconductor devices based on third generation semiconductor materials (SiC, gaN and the like), and the cutting and separating process of the semiconductor devices also provides new challenges while promoting the layout of the third generation semiconductor devices in the chip industry.
Because the back of the wafer is plated with the metal conductive film, in the prior art, wafer dicing generally adopts two methods: one approach is to use conventional mechanical cutting. The mechanical cutting mainly uses diamond to grind the wafer, the wafer separation process has the problems of mechanical deformation, stress concentration release, cutter abrasion and the like, dust pollution can be caused, and meanwhile, additional cleaning and polishing steps are required to be arranged; the other method is that firstly, the metal conductive film on the back of the wafer is ablated and cut by laser, the subsequent splitting process is easier to split completely by setting the step, the condition that the metal conductive film is involved is avoided, then the wafer is reversed to lead the front surface to be upward, and after the crystal grains are separated by a laser internal focusing cutting mode, splitting equipment is used for separating; because the method needs to set a device for removing the metal conductive film on the back of the wafer by laser ablation, the required space is large, the cost is high, the laser ablation process needs to be added with protective glue, and pure water is needed to clean the wafer before and after cutting, so that a polluted water treatment device needs to be arranged.
Disclosure of Invention
In view of the above, the invention provides a wafer separation method, which avoids mechanical deformation and concentrated stress release caused by machining and cutting wafers, does not generate cutter abrasion and dust pollution, does not need pure water to clean the wafers, and therefore, does not generate sewage and saves cost.
The invention also provides a wafer processing device.
In order to achieve the above purpose, the present invention provides the following technical solutions:
a wafer separation method, comprising:
supporting the wafer to be processed with the pre-crack on a supporting platform, wherein the first end face of the wafer faces upwards, and processing the wafer by a cutter along a first preset position of the first end face of the wafer;
and adjusting the height of the supporting platform and supporting the wafer on the supporting platform again, wherein the second end surface of the wafer faces upwards, and the cutter processes the wafer along a second preset position of the second end surface of the wafer so as to complete the processing of the wafer.
Optionally, the first end face is a back face of the wafer, and the second end face is a front face of the wafer;
the first end face is stuck with a first film, and the second end face is stuck with a second film.
Optionally, the supporting platform comprises a receiving platform supported at the middle part of the wafer and a clamp supported at the edge part of the wafer and clamping the wafer, the receiving platform comprises two opposite receiving sub-platforms, an adjusting gap is formed between the two receiving sub-platforms, and the width of the adjusting gap can be adjusted according to the requirement;
before supporting the wafer to be processed, on which the pre-crack has been formed, on the support platform, the position of the wafer is adjusted so that the pre-crack is arranged in parallel with the adjustment gap, the pre-crack being suspended on the adjustment gap.
Optionally, the width of the adjusting gap between the two sub-receiving platforms is 0.3 to 1.99 times of the grain size.
Optionally, the pre-crack on the wafer to be processed is that the laser is incident along a second preset position on the second end face of the wafer, and the laser is focused in the material to form.
Optionally, when the cutter processes the wafer along the first preset position of the wafer, the cutter peak of the cutter is in physical contact with the first preset position on the first end surface of the wafer, wherein the depth of the cutter is controlled to be 0-200 μm;
when the peak of the cutter is contacted with a first film arranged on the first end face of the wafer, and meanwhile, pressure is applied to a first preset position of the wafer, the cutter is vibrated and knocked by using a knocking hammer, so that the cutter cleaves the wafer.
Optionally, when the cutter processes the wafer along the second preset position of the wafer, the cutter peak of the cutter is in physical contact with the second preset position on the second end surface of the wafer, wherein the depth of the cutter is controlled to be 0-200 μm;
when the peak of the cutter is contacted with a second film arranged on the second end face of the wafer, and pressure is applied to a second preset position of the wafer, the cutter is vibrated and knocked by using a knocking hammer, so that a metal coating on the first end face of the wafer is separated.
Optionally, in the method, the height of the supporting platform is adjusted by a clamp, the clamp comprises a supporting adjusting mechanism and a pressing plate which are cooperatively arranged, the supporting adjusting mechanism comprises a first elastic piece, a first movable component moving along a first direction and a second movable component moving along a second direction different from the first direction, two ends of the first elastic piece are respectively connected with the first movable component and the second movable component, and the first movable component is in transmission connection with the second movable component, so that the second movable component moves along the second direction under the driving of the first movable component and the first elastic piece to adjust the height of the supporting platform.
Optionally, the first movable assembly includes a lifting rod having a lifting inclined surface, and the second movable assembly includes a rotating member slidably connected to the lifting inclined surface.
According to the wafer separation method provided by the invention, firstly, the peak of the cutter is in physical contact with the first preset position of the first end face of the wafer for splitting, then the height of the supporting platform is adjusted, and finally, the peak of the cutter is in physical contact with the second preset position of the second end face of the wafer for splitting, and the splitting of the wafer is completed through splitting of the different end faces twice. According to the wafer separation method provided by the invention, the height of the supporting platform is adjusted to split the wafer twice, so that the metal coating on the back surface of the wafer does not need to be treated in advance, the processing procedure of the wafer with the metal coating on the back surface can be simplified, the equipment for removing the metal conductive film on the back surface of the wafer by laser ablation does not need to be arranged, and the space and the cost are saved. According to the wafer separation method provided by the invention, the two end faces of the wafer are separated by adopting the processing method of physical contact splitting, so that the mechanical deformation and concentrated stress release caused by machining and splitting the wafer are avoided, the cutter abrasion and dust pollution are avoided, the wafer is not required to be cleaned by pure water, the sewage is not generated, a polluted water treatment device is not required to be arranged, and the cost is saved.
The invention also provides a wafer processing device which is applied to the wafer separation method and comprises a supporting platform.
The wafer processing device is applied to the wafer separation method, so that the wafer processing device has the advantages of the wafer separation method and is not repeated here.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram illustrating steps of a wafer separation method according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a front side of a wafer according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of dicing streets on the front side of a wafer according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a structure of a back surface of a wafer according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a wafer backside cleaving structure according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a front side wafer cleaving structure according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a crystal separation structure during wafer backside cleaving according to an embodiment of the present invention;
FIG. 8 is a schematic view illustrating an angle of die separated from a wafer according to an embodiment of the present invention;
FIG. 9 is a schematic view of another angle of die separated from a wafer according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of a structure of a tool in physical contact with a wafer according to an embodiment of the present invention;
FIG. 11 is a schematic view of a tool in contact with a wafer and with a depth d downward;
fig. 12 is a schematic structural diagram of a support adjustment mechanism according to an embodiment of the present invention.
Wherein:
1. the device comprises a cutter, 101, a cutter peak, 2, a receiving table, 3, a pressing plate, 4, a first film, 5, a second film, 6, a wafer, 601, a straight edge, 602, a crystal, 603, an electrode circuit, 604, a metal coating, 7, a pre-crack, 8, a supporting frame, 9, a cutting path, 10, a supporting and adjusting mechanism, 1001, a first movable component, 1002 and a second movable component.
Detailed Description
The invention discloses a wafer separation method, which avoids mechanical deformation and concentrated stress release caused by machining and cutting wafers, does not generate cutter abrasion and dust pollution, does not need pure water to clean the wafers, and therefore, does not generate sewage and saves cost.
The invention also discloses a wafer processing device.
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1 to 11, the wafer separation method 100 of the present invention includes a first end face cleaving process S110 and a second end face cleaving process S120. S110, a first end face splitting process comprises the following steps: the wafer 6 to be processed, on which the pre-crack 7 has been formed, is supported on a support platform with the first end of the wafer 6 facing upwards, and the tool 1 processes the wafer 6 along a first preset position of the first end of the wafer 6. S120, the second end face splitting process comprises the following steps: the height of the supporting platform is adjusted, the wafer is supported on the supporting platform again, the second end face of the wafer 6 faces upwards, and the cutter 1 processes the wafer 6 along a second preset position of the second end face of the wafer 6 to complete processing of the wafer 6, in particular cleavage of the wafer 6.
According to the wafer separation method, firstly, the peak 101 of the cutter 1 is subjected to physical contact splitting with the first preset position of the first end face of the wafer 6, then the height of the supporting platform is adjusted, and finally, the peak 101 of the cutter 1 is subjected to physical contact splitting with the second preset position of the second end face of the wafer 6, and the splitting of the wafer is completed through the splitting of the two different end faces. According to the wafer separation method provided by the invention, the height of the supporting platform is adjusted to split the wafer twice, so that the metal coating on the back surface of the wafer 6 does not need to be treated in advance, the processing procedure of the wafer with the metal coating on the back surface can be simplified, the equipment for removing the metal conductive film on the back surface of the wafer 6 by laser ablation does not need to be arranged, and the space and the cost are saved. According to the wafer separation method provided by the invention, the two end faces of the wafer 6 are separated by adopting the processing method of physical contact splitting, so that the mechanical deformation and concentrated stress release caused by machining and splitting the wafer 6 are avoided, tool abrasion and dust pollution are not generated, pure water is not required to clean the wafer, sewage is not generated, a polluted water treatment device is not required to be arranged, and the cost is saved.
In one embodiment, the first end surface is a back surface of the wafer 6, and the second end surface is a front surface of the wafer 6. The first preset position of the back surface of the wafer 6 is determined by the set CCD, the second preset position of the front surface of the wafer 6 is the dicing street 9 on the wafer 6, as shown in fig. 2 and 3, the dicing street 9 in the X direction is parallel to the straight edge 601 of the wafer 6, and the dicing street 9 in the y direction is perpendicular to the straight edge 601 of the wafer 6.
The supporting platform comprises a receiving platform 2 supported at the middle part of the wafer 6 and a clamp supported at the edge part of the wafer 6 and clamping the wafer 6, the receiving platform 2 comprises two opposite receiving sub-platforms, an adjusting gap is formed between the two receiving sub-platforms, and the width of the adjusting gap is adjusted according to the needs of a person skilled in the art. Before the wafer 6 to be processed, on which the pre-crack 7 has been formed, is supported on the support platform, the position of the wafer 6 is adjusted, so that the pre-crack 7 is arranged in parallel with the adjustment gap, and the pre-crack 7 is suspended on the adjustment gap, so that the subsequent splitting processing is facilitated. In general, the width of the adjustment gap between the two sub-receiving stations is 0.3 to 1.99 times the grain size. And separating the wafer 6 to obtain the crystal grains.
Further, the pre-crack 7 on the wafer 6 to be processed is formed by focusing the laser light in the material of the wafer 6, wherein the laser light is incident along a second preset position on the second end surface of the wafer 6. Specifically, the laser is incident on the dicing street 9 on the front surface of the wafer 6, and the laser is focused inside the material to form a micro-nano explosion point, so that the crack propagation direction is the dicing direction of the wafer 6. In the multi-layer dicing or multi-focal dicing mode, the upper and lower direction cracks are spread and joined together to form visible pre-cracks 7 in the front surface of the wafer 6.
Specifically, when the tool 1 processes the wafer 6 along the first preset position of the wafer 6, the peak 101 of the tool 1 makes physical contact with the first preset position on the first end surface of the wafer 6, as shown in fig. 5. Wherein the depth d of the cutter 1 is controlled to be 0 μm-200 μm, the distance between the cutter peak 101 and the receiving table 2 is H, and the width of the adjusting gap between the receiving tables is L as shown in FIG. 11. When the peak 101 of the cutter 1 contacts the first thin film 4 disposed on the first end surface of the wafer 6 (the back surface of the wafer 6), and simultaneously, a pressure acts on the first preset position of the wafer 6, the cutter 1 is vibrated and knocked by using a knocking hammer, so that the cutter cleaves the wafer, as shown in fig. 7. The first film 4 is attached to the back surface (first end surface) of the wafer 6, and the second film 5 is attached to the front surface (second end surface) of the wafer 6. The first film 4 is a film with adhesiveness and extensibility, which may be a blue film or a UV film, and the second film 5 is an antistatic transparent film, which may be a mylar film. The first film 4 is used to protect the metallization 604 on the back side of the wafer 6 and the second film 5 is used to protect the electrode circuitry 603 on the front side of the wafer 6. It will be appreciated that wafer 6 also includes a crystal 602, with a metallization layer 604 on the back side of crystal 602 and an electrode circuit 603 on the front side.
In the above steps, when the peak 101 contacts with the first film 4 of the wafer 6, the first film 4 is compressed and acts on the first preset position of the wafer 6, and then the knocking hammer conducts the kinetic energy vibration of the tool 1, and the pre-crack 7 on the front surface of the wafer 6 extends from the surface to the metal coating 604 on the back surface of the wafer 6 in cooperation with the lever principle formed by the three-point support of the table 2 and the tool 1, so as to complete the splitting of the wafer by the tool. The metallization 604 on the back side of the wafer 6 does not completely separate during this process.
Further, the method further comprises the step of making physical contact between the peak 101 of the tool 1 and the second preset position on the second end surface of the wafer 6 when the tool 1 processes the wafer 6 along the second preset position of the wafer 6, wherein the depth d of the tool 1 is controlled to be 0 μm-200 μm. When the peak 101 of the cutter 1 contacts with the second film 5 arranged on the second end surface of the wafer 6 and pressure is applied to the second preset position of the wafer 6, the cutter 1 is vibrated and knocked by using a knocking hammer, so that the metal coating 604 on the first end surface of the wafer 6 is separated. After the above steps, the wafer 6 is placed on the film expanding device to complete the equidistant separation of the wafer 6, and the wafer 6 is separated into grains, as shown in fig. 8 and 9.
In the method, the height of the supporting platform is adjusted through a clamp, the clamp comprises a supporting adjusting mechanism 10 and a pressing plate 3 which are arranged in a matched mode, a supporting frame 8 is placed on the supporting adjusting mechanism 10, and the supporting frame 8 is used for supporting a wafer 6. The support adjustment mechanism 10 includes a first elastic member, a first movable assembly 1001 moving along a first direction, and a second movable assembly 1002 moving along a second direction different from the first direction, as shown in fig. 12, two ends of the first elastic member are respectively connected with the first movable assembly 1001 and the second movable assembly 1002, and the first movable assembly 1001 is in transmission connection with the second movable assembly 1002, so that the second movable assembly 1002 moves along the second direction under the driving of the first movable assembly 1001 and the first elastic member, so as to adjust the height of the support platform. The first movable assembly 1001 includes the top pole that has the top inclined plane, and the second movable assembly 1002 includes the rotation piece of sliding connection with the top inclined plane, and the motion of first movable assembly 1001 drives the motion of top pole to promote the change of the height of rotation piece, and then drive second movable assembly 1002 and go up and down, thereby adjust the height of holding surface, satisfy the change demand of the holding height of wafer 6.
Example 1
The wafer separation method of the invention comprises the following steps:
step 1: the front surface of the wafer 6 is stuck with the first film 4 upwards;
step 2: the laser is incident to a cutting channel 9 on the front surface of the wafer 6, micro-nano explosion points are formed in the material by focusing in the laser, the crack propagation direction is the wafer cutting direction, and when in a multi-layer cutting or multi-focus cutting mode, cracks in the upper and lower directions are propagated and connected together, so that a visible pre-crack 7 is formed on the front surface of the wafer 6;
step 3: the back side cleaving process includes:
the wafer 6 is adjusted to be horizontal through the lower CCD, so that the direction of the wafer cutting channel 9 is parallel to the direction of the cutter 1;
setting the width L of an adjusting gap between two sub-receiving platforms, wherein the size of the crystal grain to be obtained is 2mm square blocks with 2mm, the width L of the adjusting gap is 1.2 times of the size of the crystal grain, and the width L is 2.4 mm;
moving the cutter 1 downwards, wherein the cutter peak 101 is in physical contact with a first preset position on the back surface of the wafer 6 through a first film 4, certain flexibility exists in the first film 4, the magnitude of the interaction force between the cutter peak 101 and crystal grains is positively related to the downward depth d of the cutter 1, when the cutter peak 101 presses the first film 4 and has force to act on the first preset position, the cutter 1 is subjected to kinetic energy vibration conduction by a knocking hammer, and the surface pre-crack 7 of the wafer is stretched from the surface to a metal coating 604 on the back surface of the wafer 6, so that the cutter cleaves the wafer;
step 4: the front side cleaving process includes:
reversing the direction of the wafer 6 to enable the front surface of the wafer 6 to be upward; the height of the supporting platform is adjusted through the clamp;
the level of the wafer 6 is regulated by the upper CCD, so that the cutting channel 9 on the front surface of the wafer 6 is parallel to the direction of the cutter 1;
setting the width L of an adjusting gap between two sub-receiving platforms, wherein the size of the crystal grain to be obtained is 2mm of square blocks with 2mm, the width L of the adjusting gap is 0.8 times of the size of the crystal grain, and the width L is 1.6mm;
moving the cutter 1 downwards, wherein the cutter peak 101 is in physical contact with the front cutting channel 9 of the wafer 6 through the second film 5, certain flexibility exists in the second film 5, the interaction force between the cutter peak 101 and the crystal grains is positively related to the downward depth d of the cutter 1, when the cutter peak 101 presses the second film 5 and has force on the cutting channel 9, the knocking hammer conducts kinetic energy vibration of the cutter 1, and the metal coating 604 on the back surface of the wafer 6 is separated by matching with the lever principle formed by three-point support of the receiving table 2 and the cutter 1;
after the above steps, the wafer 6 is placed on a film expanding device to complete the separation of the spacing between the grains, and the grains are separated.
The wafer separation method adopts a laser non-contact processing method, so that the method has the advantages of no contact pollution and no mechanical deformation on processed materials. The method adopts laser focusing modification to generate pre-cracks, the modified region is controlled within 10 mu m, the loss of materials is small, and the size can be reduced as much as possible when the wafer chip is designed into the aisle, so that the method has the advantage of saving the material cost. When the back splitting processing mode is adopted, the wafer 6 and the cutter 1 are separated by the first film 4 with extensibility in the processing process, so that the wafer 6 is protected, and the soft contact pressure conduction advantage is realized. When the front side splitting processing mode is adopted, the anti-static transparent film, namely the second film 5, is arranged between the wafer 6 and the cutter 1 in the processing process, so that the front side of the wafer 6 is protected, and the vibration and acting force of the cutter 1 are transmitted to the back side of the wafer 6 in a soft contact mode, so that the complete separation of the stress of the metal coating 604 is realized. The wafer separation method of the invention does not need to process the metal coating 604 on the back surface of the wafer 6 in advance, and can simplify the processing procedure of the wafer with the metal coating on the back surface, thereby optimizing the production consumption; the crystal 602 and the metal coating 604 of the wafer 6 are separated step by adopting a double-sided splitting processing mode, so that the production yield of the separated wafer can be effectively improved, the production efficiency is improved, and the energy consumption is reduced.
The invention also provides a wafer processing device which is applied to the wafer separation method, and the wafer processing device comprises a supporting platform, wherein the supporting platform comprises a receiving platform for supporting the wafer 6 and a clamp for clamping the wafer 6.
In the description of the present embodiment, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "vertical", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or element in question must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present embodiment.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present embodiment, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other. The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. A method of separating wafers, comprising:
supporting the wafer to be processed with the pre-crack on a supporting platform, wherein the first end face of the wafer faces upwards, and processing the wafer by a cutter along a first preset position of the first end face of the wafer;
and adjusting the height of the supporting platform and supporting the wafer on the supporting platform again, wherein the second end surface of the wafer faces upwards, and the cutter processes the wafer along a second preset position of the second end surface of the wafer so as to complete the processing of the wafer.
2. The method of claim 1, wherein the first end surface is a back surface of the wafer and the second end surface is a front surface of the wafer;
the first end face is stuck with a first film, and the second end face is stuck with a second film.
3. The wafer separation method according to claim 1, wherein the support platform comprises a receiving table supported at a middle portion of the wafer and a jig supported at an edge portion of the wafer and clamping the wafer, the receiving table comprises two oppositely disposed sub-receiving tables, and an adjustment gap is formed between the two sub-receiving tables;
before supporting the wafer to be processed, on which the pre-crack has been formed, on the support platform, the position of the wafer is adjusted so that the pre-crack is arranged in parallel with the adjustment gap, the pre-crack being suspended on the adjustment gap.
4. The method of claim 3, wherein the width of the adjustment gap between the two sub-stations is 0.3 to 1.99 times the grain size.
5. The method of claim 1, wherein the pre-crack in the wafer to be processed is a laser incident along a second predetermined location on the second end surface of the wafer, and the laser is focused within the material.
6. The method of claim 1, wherein when the tool is used to process the wafer along the first predetermined position of the wafer, the peak of the tool is in physical contact with the first predetermined position on the first end surface of the wafer, and wherein the depth of the tool is controlled to be 0 μm to 200 μm;
when the peak of the cutter is contacted with a first film arranged on the first end face of the wafer, and meanwhile, pressure is applied to a first preset position of the wafer, the cutter is vibrated and knocked by using a knocking hammer, so that the cutter cleaves the wafer.
7. The method of claim 1, wherein when the tool is used to process the wafer along the second predetermined position of the wafer, the peak of the tool is in physical contact with the second predetermined position on the second end surface of the wafer, and wherein the depth of the tool is controlled to be 0 μm to 200 μm;
when the peak of the cutter is contacted with a second film arranged on the second end face of the wafer, and pressure is applied to a second preset position of the wafer, the cutter is vibrated and knocked by using a knocking hammer, so that a metal coating on the first end face of the wafer is separated.
8. The wafer separating method according to claim 1, wherein in the method, the height of the support platform is adjusted by a jig, the jig comprises a support adjusting mechanism and a pressing plate which are cooperatively arranged, the support adjusting mechanism comprises a first elastic member, a first movable assembly moving along a first direction and a second movable assembly moving along a second direction different from the first direction, two ends of the first elastic member are respectively connected with the first movable assembly and the second movable assembly, and the first movable assembly is in transmission connection with the second movable assembly, so that the second movable assembly moves along the second direction under the drive of the first movable assembly and the first elastic member to adjust the height of the support platform.
9. The method of claim 8, wherein the first movable assembly comprises a lift lever having a lift ramp, and the second movable assembly comprises a rotating member slidably coupled to the lift ramp.
10. A wafer processing apparatus, characterized in that it is applied to the wafer separating method according to any one of claims 1 to 9, and comprises the support stage.
CN202311751680.6A 2023-12-18 2023-12-18 Wafer separating method and wafer processing device Pending CN117832172A (en)

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