CN117826468A

CN117826468A - Display panel, shielding object identification method and display device

Info

Publication number: CN117826468A
Application number: CN202311861816.9A
Authority: CN
Inventors: 周志超; 谭志威
Original assignee: TCL Huaxing Photoelectric Technology Co Ltd; Huizhou China Star Optoelectronics Display Co Ltd
Current assignee: TCL Huaxing Photoelectric Technology Co Ltd; Huizhou China Star Optoelectronics Display Co Ltd
Priority date: 2023-12-29
Filing date: 2023-12-29
Publication date: 2024-04-05

Abstract

The application discloses a display panel, a shielding object identification method and a display device. The display panel comprises a substrate, a plurality of pixel driving modules and a display module, wherein the pixel driving modules are arranged on the substrate in an array manner and are used for receiving scanning signals and data signals and displaying pictures according to the scanning signals and the data signals; the photoelectric identification module is arranged on the substrate, and is arranged between two adjacent pixel driving modules, the photoelectric identification module comprises a photoelectric detection unit and a nerve implantation unit, the photoelectric detection unit outputs photoelectric signals to the nerve implantation unit according to illumination intensity, scanning signals and input voltage signals, and the nerve implantation unit is used for outputting photoelectric identification signals according to the scanning signals, the photoelectric signals and weight voltage signals. The photoelectric detection unit, the nerve implantation unit and the pixel driving module are integrated on the substrate, and the integration level is high.

Description

Display panel, shielding object identification method and display device

Technical Field

The application relates to the technical field of display, in particular to a display panel, a shielding object identification method and a display device.

Background

As an important technology in the future world, artificial intelligence has developed an important potential in various fields such as fingerprint recognition, face recognition, and automatic driving. In the display field, man-machine interaction, computer vision and the like are important components of artificial intelligence. Gesture recognition is a basic way for realizing man-machine interaction and display intellectualization.

Conventional gesture recognition requires units including screen display units, imaging units (e.g., built-in cameras) and learning units (e.g., neural networks in computers), which are often independent of each other in terms of fabrication and operation. After the camera generates gesture images, the neural network learns and classifies the gesture images, and then the screen displays the recognition result. Not only the integration level is low, but also the processing speed is low.

Disclosure of Invention

The embodiment of the application provides a display panel, a shielding object identification method and a display device, wherein a photoelectric detection unit, a nerve implantation unit and a pixel driving module are integrated on a substrate, and the integration level is high.

In a first aspect, embodiments of the present application provide a display panel, including:

the substrate is provided with a plurality of grooves,

the pixel driving modules are arranged on the substrate in an array manner and used for receiving scanning signals and data signals and displaying pictures according to the scanning signals and the data signals;

the photoelectric identification module is arranged on the substrate, and is arranged between two adjacent pixel driving modules, the photoelectric identification module comprises a photoelectric detection unit and a nerve implantation unit, the photoelectric detection unit outputs photoelectric signals to the nerve implantation unit according to illumination intensity, scanning signals and input voltage signals, and the nerve implantation unit is used for outputting photoelectric identification signals according to the scanning signals, the photoelectric signals and weight voltage signals.

In some embodiments, the number of the optoelectronic recognition modules in the target row is equal to or less than the number of the pixel driving modules; and/or the number of the groups of groups,

the number of the photoelectric identification modules in the target column is smaller than or equal to the number of the pixel driving modules.

In some embodiments, the scanning signal comprises a first scanning signal, and the photodetection unit further comprises a phototransistor and a photodetector;

the grid electrode of the photoelectric switch transistor is connected with the first scanning signal, one of the source electrode and the drain electrode of the photoelectric switch transistor is connected with an input voltage signal, the other of the source electrode and the drain electrode of the first switch transistor is connected with a first node, and the first node is connected with the nerve implantation unit;

one end of the photoelectric detector is connected with the first node, and the other end of the photoelectric detector is grounded.

In some embodiments, writing the input voltage signal to the first node based on control of the first scan signal;

when the photoelectric detector receives illumination, the photoelectric detector divides the voltage of the first node to enable the voltage signal of the first node to be reduced from the input voltage signal to a photoelectric sensing signal, and the photoelectric sensing signal is used as the photoelectric signal to be output to the nerve implantation unit;

when the photodetector does not receive illumination, the voltage signal of the first node is kept as the input voltage signal, and the input voltage signal is output to the nerve implantation unit as the photoelectric signal.

In some embodiments, the scan signal comprises a second scan signal, and the neural implant unit comprises a double gate transistor and a first switching transistor;

the first grid electrode of the double-grid transistor is connected with the first node, the second grid electrode of the double-grid transistor inputs weight voltage signals, one of the source electrode and the drain electrode of the double-grid transistor is connected with a first voltage end, and the other of the source electrode and the drain electrode of the double-grid transistor is connected with one of the source electrode and the drain electrode of the first switch transistor;

the grid electrode of the first switch transistor is connected with the second scanning signal, one of the source electrode and the drain electrode of the first switch transistor is connected with the other of the source electrode and the drain electrode of the double-gate transistor, the other of the source electrode and the drain electrode of the first switch transistor is connected with the output end of the photoelectric identification signal, and the second scanning signal is a scanning signal written after the first scanning signal.

In some embodiments, the neural implant unit further comprises a second switching transistor, a gate of the second switching transistor being connected to the first scanning signal, one of a source and a drain of the second switching transistor being connected to the weight voltage signal, the other of the source and the drain of the second switching transistor being connected to the second gate of the dual gate transistor.

In some embodiments, the optoelectronic identification module further comprises an amplifier connected between the first node and the first gate of the double gate transistor, the amplifier for receiving and amplifying the voltage of the first node.

In some embodiments, the amplifier includes a first amplifying transistor and a second amplifying transistor;

one of a grid electrode and a source electrode and a drain electrode of the first amplifying transistor is connected with a first voltage end, and the other of the source electrode and the drain electrode of the first amplifying transistor is connected with one of the source electrode and the drain electrode of the second switching transistor;

the grid electrode of the second amplifying transistor is connected with the first node, one of the source electrode and the drain electrode of the second amplifying transistor is grounded, and the other of the source electrode and the drain electrode of the second amplifying transistor is connected with one of the source electrode and the drain electrode of the second switching transistor.

In a second aspect, the present application provides a method for identifying a shielding object, which is applied to the display panel of any one of the above-mentioned aspects, including:

when each pixel driving module in the display panel drives a pixel to display a picture, acquiring a photoelectric signal output by a photoelectric detection unit in each photoelectric identification module;

based on a nerve implantation unit in the photoelectric identification module, which is electrically connected with the photoelectric detection unit, outputting a photoelectric identification signal according to the photoelectric signal and a preset weight voltage signal;

determining target shielding object identifiers corresponding to all the photoelectric identification modules based on a preset identification signal mapping table, wherein the photoelectric identification signals in the preset identification signal mapping table correspond to the shielding object identifiers one by one;

and determining the outline information of the occlusion object according to the identification of each target occlusion object.

In a second aspect, the present application provides a display device comprising a display panel as claimed in any one of the above.

The display panel, the shielding object identification method and the display device provided by the embodiment of the application integrate the photoelectric detection unit, the nerve implantation unit and the pixel driving module on the substrate, the integration level is high, the photoelectric identification module and the pixel driving module work relatively independently and are not affected, and the processing speed is high.

Drawings

Technical solutions and other advantageous effects of the present application will be made apparent from the following detailed description of specific embodiments of the present application with reference to the accompanying drawings.

FIG. 1 is a schematic view of a display panel according to an embodiment of the present disclosure;

FIG. 2 is a schematic structural diagram of a display panel according to another embodiment of the present application;

FIG. 3 is a schematic circuit diagram of a display panel according to another embodiment of the present application;

FIG. 4 is a timing diagram of a first scan signal and a second scan signal according to another embodiment of the present application;

fig. 5 is a flow chart of a method for identifying an obstruction in another embodiment of the present application.

Reference numerals:

100. a substrate; 200. a pixel driving module; 300. a photoelectric identification module; 310. a photoelectric detection unit; 320. a nerve implantation unit; 330. an amplifier.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.

In the description of the present application, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," etc. indicate or are based on the orientation or positional relationship shown in the drawings, merely for convenience of description and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.

In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.

In this application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, and may also include the first and second features not being in direct contact but being in contact with each other by way of additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.

The following disclosure provides many different embodiments or examples for implementing different structures of the present application. In order to simplify the disclosure of the present application, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present application. Furthermore, the present application may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not in themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present application provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize the application of other processes and/or the use of other materials.

Referring to fig. 1, the embodiment of the present application provides a display panel, which includes a substrate 100, a plurality of pixel driving modules 200 and at least one photoelectric recognition module 300, wherein the plurality of pixel driving modules 200 are arranged on the substrate 100 in an array, and the pixel driving modules 200 receive scanning signals and data signals and realize the image display of the display panel according to the scanning signals and the data signals.

The photoelectric recognition module 300 is disposed on the substrate 100, and the photoelectric recognition module 300 is disposed between two adjacent pixel driving modules 200. The photo recognition module 300 includes a photo detection unit 310 and a nerve implantation unit 320 electrically connected, and the photo detection unit 310 and the nerve implantation unit 320 are connected through a first node Q. The photoelectric detection unit 310 receives illumination, generates a photoelectric induced voltage signal according to illumination intensity, the scanning signal and the input voltage signal are input to the photoelectric detection unit 310, the photoelectric detection unit 310 determines a photoelectric signal based on the photoelectric induced voltage signal, the scanning signal and the input voltage signal, and outputs the photoelectric signal to the nerve implantation unit 320, the input voltage signal is written to the first node Q based on the scanning signal, whether a shielding object is present above the display panel to shield light rays entering the photoelectric identification module 300, and the photoelectric detection unit 310 adjusts a voltage value of the first node Q and then inputs the photoelectric signal to the nerve implantation unit 320. The nerve implantation unit 320 performs learning recognition on the input photoelectric signal based on the weight voltage signal, and finally outputs a photoelectric recognition signal under the control of the scan signal. The photoelectric sensing signal is a voltage signal output when the photoelectric recognition module 300 is not shielded, the voltage signal output when the photoelectric recognition module 300 is completely shielded is an input voltage signal, and the shielding object may only shield part of the light rays emitted into the photoelectric recognition module 300, that is, the shielding object is arranged above the photoelectric recognition module 300, but when the light rays are emitted into the photoelectric recognition module 300, the photoelectric signal output by the photoelectric recognition module 300 is between the photoelectric sensing signal and the input voltage signal, so that in order to distinguish the photoelectric signals in different states as much as possible, the input voltage signal and the photoelectric sensing signal are set to have signal values with larger difference. In addition, the nerve implantation unit 320 corrects the input photoelectric signal based on the weight voltage signal so that the output photoelectric recognition signal can accurately reflect the state of the photoelectric recognition module 300. The weight voltage signal may be preset to an arbitrary value and then continuously adjusted for correction during deep learning. The weight voltage signal is a derivative concept of the neural network, is equivalent to a weight coefficient in the neural network, is mainly used for adjusting the weight coefficient of each photoelectric identification signal in the whole array output, and is an important parameter for training gesture recognition capability.

In this embodiment, the photodetection unit 310, the nerve implantation unit 320 and the pixel driving module 200 are integrated on the substrate 100, so that the integration level is high, but the operation of the photodetection module 300 and the pixel driving module 200 is relatively independent, and the photodetection module and the pixel driving module 200 are not affected by each other, so that the processing speed is high.

In one embodiment, the pixel driving modules 200 are disposed on the substrate 100 in an array, that is, the pixel driving modules 200 are disposed along rows and columns, respectively. The electro-optical recognition modules 300 and the pixel driving modules 200 shown in fig. 1 are in one-to-one correspondence, wherein the relative positions of the electro-optical recognition modules 300 and the pixel driving modules 200 are only one example, and should not be construed as being limited thereto.

The number of the photoelectric recognition modules 300 in the target row is smaller than or equal to the number of the pixel driving modules 200, that is, for the target row, the photoelectric recognition modules 300 and the pixel driving modules 200 are in one-to-one correspondence, so that the accuracy of recognizing the shielding object by the photoelectric recognition modules 300 is improved, or the photoelectric recognition modules 300 are arranged at intervals of a plurality of pixel driving modules 200, that is, the plurality of pixel driving modules 200 correspond to one photoelectric recognition module 300, so that the total space occupied by the photoelectric recognition modules 300 is reduced. As shown in fig. 2, every 4 pixel driving modules 200 corresponds to one photoelectric recognition module 300.

Likewise, the number of the photoelectric recognition modules 300 in the target column is smaller than or equal to the number of the pixel driving modules 200, that is, for the target column, the photoelectric recognition modules 300 and the pixel driving modules 200 are in one-to-one correspondence, so that the accuracy of recognizing the shielding object by the photoelectric recognition modules 300 is improved, or the photoelectric recognition modules 300 are arranged at intervals of a plurality of pixel driving modules 200, that is, a plurality of pixel driving modules 200 correspond to one photoelectric recognition module 300, so that the total space occupied by the photoelectric recognition modules 300 is reduced. As shown in fig. 2, every 4 pixel driving modules 200 corresponds to one photoelectric recognition module 300.

In one embodiment, as shown in fig. 3, the scanning signal includes a first scanning signal Vscan1, and the photo detection unit 310 further includes a photo switching transistor T0 and a photo detector PD, where the photo switching transistor T0 is used to control the reading of the input voltage signal Vin according to the first scanning signal Vscan 1. The photoelectric detector PD switches on/off states according to illumination intensity, and the photoelectric detector PD can be a perovskite photoelectric detector, a hydrogenated amorphous silicon photoelectric detector or a metal oxide photoelectric detector. The pixel driving module 200 receives the first scan signal Vscan1 to write the data voltage signal Vdata to control the pixel to light.

The gate of the photo switching transistor T0 is connected to the first scan signal Vscan1, one of the source and the drain of the photo switching transistor T0 is connected to the input voltage signal Vin, and the other of the source and the drain of the photo switching transistor T0 is connected to the first node Q. One end of the photodetector PD is connected to the first node Q, and the other end of the photodetector PD is grounded Vgnd.

The first scan signal Vscan1 is written to control the phototransistor T0 to be turned on, and an input voltage signal V is input to the first node Q _in When the light entering the photoelectric recognition module 300 is blocked by the blocking object above the display panel, and the photo detector PD receives the light, if the photo detector PD is turned on based on the light intensity, the photo detector PD is equivalent to a voltage dividing resistor to divide the voltage of the first node Q, so that the voltage of the first node Q is the photo-induced signal V _OC I.e. V _OC Less than V _in That is, when there is no shielding object above the display panel to shield the light entering the optoelectronic identification module 300, the optoelectronic signal input to the nerve implantation unit 320 by the optoelectronic detection unit 310 is the optoelectronic sensing signal V _OC 。

The first scan signal Vscan1 is written to control the phototransistor T0 to be turned on, and an input voltage signal V is input to the first node Q _in When a shielding object is present above the display panel to shield the light entering the optoelectronic recognition module 300, the photodetector PD senses no light, and the photodetector PD does not generate a photoelectric sensing signal when the photodetector PD is in an off state based on the illumination intensity, so that the voltage of the first node Q is the input voltage signal Vin. That is, when the shielding object is present above the display panel to shield the light entering the optoelectronic identification module 300, the optoelectronic signal input to the nerve implantation unit 320 by the optoelectronic detection unit 310 at the position where the light is shielded is the input voltage signal V _in 。

In one embodiment, the scan signal includes a second scan signal Vscan2, the neural implant unit 320 includes a double-gate transistor T3 and a first switch transistor T5, the first gate of the double-gate transistor T3 is connected to the first node Q, the second gate of the double-gate transistor T3 is input with the weight voltage signal Vw, one of the source and the drain of the double-gate transistor T3 is connected to the first voltage terminal Vdd, and the other of the source and the drain of the double-gate transistor T3 is connected to one of the source and the drain of the first switch transistor T5, i.e., the photoelectric signal and the weight voltage signal Vw are respectively input to the two gates of the double-gate transistor T3.

The gate of the first switching transistor T5 is connected to the second scan signal Vscan2, one of the source and the drain of the first switching transistor T5 is connected to the other of the source and the drain of the double-gate transistor T3, and the other of the source and the drain of the first switching transistor T5 is connected to the output terminal of the photoelectric identification signal Vout. As shown in fig. 4, the timing diagrams of the first scan signal Vscan1 and the second scan signal Vscan2 are shown, and the second scan signal Vscan2 is a scan signal written after the first scan signal Vscan 1. The photoelectric signal and the weight voltage signal Vw are respectively input to two gates of the double-gate transistor T3, the double-gate transistor T3 is turned on and then outputs the photoelectric identification signal Vout to one of the source and the drain of the first switching transistor T5, and when the second scan signal Vscan2 is written in that the first switching transistor T5 is turned on, the photoelectric identification signal Vout is output from the other of the source and the drain of the first switching transistor T5.

In one embodiment, the neural implant unit 320 further includes a second switching transistor T4, wherein a gate of the second switching transistor T4 is connected to the first scanning signal Vscan1, one of a source and a drain of the second switching transistor T4 is connected to the weight voltage signal Vw, and the other of the source and the drain of the second switching transistor T4 is connected to the second gate of the dual-gate transistor T3, i.e. when the first scanning signal Vscan1 is written, the second switching transistor T4 inputs the weight voltage signal Vw to the second gate of the dual-gate transistor T3. In this embodiment, the number of components such as transistors included in the optoelectronic recognition module 300 is smaller than that of the plurality of transistors used for driving the pixel display in the pixel driving module 200, and thus the space occupied is smaller, so that the integration of the optoelectronic recognition module 300 and the pixel driving module 200 has less influence on the pixel driving module 200.

The transistor materials in the above embodiments may be hydrogenated amorphous silicon, metal oxide, or low temperature polysilicon. The transistors except the double-gate transistor T3 are all addressing transistors, and the transistors except the double-gate transistor T3 can also be set as double-gate transistors, and then the top gates of the double-gate transistors are connected with the bottom gates, so that on-state current is increased, off-state current is reduced, the on-state current ratio of the transistors, namely the on-state current ratio, is improved, and the charging rate and the response speed of the circuit are further improved.

In one embodiment, since the photo signal output by the photo detection unit 310 is the photo sensing signal V _OC In the time-course of which the first and second contact surfaces,due to the photo-induced signal V _OC As small as it may not be able to be effectively identified as being sensed by the double-gate transistor T3, the optoelectronic identification module 300 further includes an amplifier 330 connected between the first node Q and the first gate of the double-gate transistor T3, the amplifier 330 being configured to receive and amplify the voltage of the first node Q, and then write it to the first gate of the double-gate transistor T3 and be identified by the double-gate transistor T3.

In one embodiment, the amplifier 330 includes a first amplifying transistor T1 and a second amplifying transistor T2, one of a gate and a source and a drain of the first amplifying transistor T1 is connected to the first voltage terminal Vdd, the other of the source and the drain of the first amplifying transistor T1 is connected to one of a source and a drain of the second switching transistor T4, a gate of the second amplifying transistor T2 is connected to the first node Q, one of the source and the drain of the second amplifying transistor T2 is grounded, and the other of the source and the drain of the second amplifying transistor T2 is connected to one of the source and the drain of the second switching transistor T4. The first amplifying transistor T1 and the second amplifying transistor T2 constitute an inverter. The first amplifying transistor T1 is a load transistor of an inverter, the second amplifying transistor T2 is a driving transistor of the inverter, and the body material may be hydrogenated amorphous silicon, metal oxide or low-temperature polysilicon.

As shown in fig. 3 and 4, the photodetecting unit 310, the nerve implanting unit 320, and the pixel driving module 200 are integrated on the substrate 100. The pixel driving module 200 is composed of one address transistor T6 and a pixel electrode. The pixel electrode voltage of the driving liquid crystal is Vpixel, and the liquid crystal capacitance and the storage capacitance respectively represent C _LC And Cst.

The anode of the photodetector PD is connected to Vgnd and the cathode is connected to the bottom gate electrode of T2, and the input voltage signal Vin is in principle shared by all pixels. When illuminated, the photodetector PD produces a photocurrent that is positively correlated with the intensity of the illumination, represented by a constant current source Iph in the circuit. The photocurrent is close to 0 if not illuminated by any light. The capacitance of the photodetector PD is Cpd.

The double gate transistors T0, T4, T5, T6 are addressing transistors, the top gates of all transistors being connected to the bottom gate to increase the switching ratio. The bottom gate voltages of the double gate transistors T0, T4, and T6 are turned on and off by the row scanning square wave signal Vscan1 of the present row, and the double gate transistor T5 is turned on and off by the next row square wave signal Vscan 2.

Transistors T1 and T2 constitute an inverter. Wherein T1 is a load transistor of the inverter, and T2 is a drive transistor of the inverter. The drain electrode and the grid electrode of the T1 are both connected with the high level Vdd, and the source electrode is connected with the drain electrode of the T2. The source electrode of T2 is connected with the low level Vgnd, the bottom gate is connected with the cathode of the photo detector PD, and the top gate and the source electrode are connected with Vgnd. Since the photo signal input to the inverter from the first node Q when the photo detector PD is illuminated is relatively small, the inverter formed by T1 and T2 is used to amplify the input photo signal, and the output node of the inverter is at the junction of T1 and T2, and the junction is connected to the bottom gate of the neural implant transistor T3.

The nerve implantation transistor is T3, T3 is a transistor capable of being regulated and controlled by double gates, the drain electrode of the transistor is connected with a high level Vdd, the bottom gate of the T3 is connected with the output end of an inverter, the top gate of the T3 is connected with a weight voltage signal Vw, the weight voltage signal Vw is written in by a transistor T4, a photoelectric signal amplified by the inverter and the weight voltage signal Vw are input to the T3, and a photoelectric identification signal output by the T3 is read by a transistor T5.

The first scan signal Vscan1 is written to control the phototransistor T0 to be turned on, and an input voltage signal V is input to the first node Q _in When a shielding object is arranged above the photoelectric detector PD, the photoelectric detector PD does not generate a photoelectric sensing signal, and the potential of the first node Q is the input voltage signal Vin. When there is no shielding object above the photo detector PD, the photo detector PD is turned on to divide the voltage of the first node Q by the voltage dividing resistor, so that the potential of the first node Q is the photo-induced signal V _OC . When the square wave scanning signal Vscan1 of the photodetector PD with the shielding object above a certain line is at a high level, T0, T4, T6 are simultaneously turned on, and the input voltage signal Vin is written into the first node Q through T0, that is, the photodetector PD with the shielding object above a certain line is written into the bottom gate of T2 as the input voltage signal Vin. When the square wave scanning signal Vscan1 of the photo detector PD without shielding above a certain line is at high level, T0, T4 and T6 are simultaneously turned on for outputtingThe input voltage signal Vin is written into the first node Q through T0, and the potential of the first node Q is changed from the input voltage signal Vin to the photoelectric sensing signal V _OC That is, the photoelectric signal written into the bottom gate of T2 by the photoelectric detector PD without shielding object above a certain line is the photoelectric sensing signal V _OC 。

The photoelectric signal is amplified by the inverter and then written into the T3 bottom gate. Meanwhile, the weight voltage signal Vw is written into the top gate of the T3 through the T4, the high level Vdd is input into the drain of the T3, the opening degree of the T3 is determined by the combined action of the weight voltage signal Vw of the top gate of the T3 and the amplified photoelectric signal of the bottom gate, and the generated photoelectric identification signal Vout flows out through the source of the T3 and is read by the peripheral circuit after being addressed through the transistor T5. When T3 is fully turned on, the voltage value of the photo-recognition signal Vout is Vdd, when T3 is turned off, the voltage value of the photo-recognition signal Vout is 0, and when T3 is partially turned on, the voltage value of the photo-recognition signal Vout is between 0 and Vdd. The photoelectric identification signal Vout is used to characterize whether a shielding object exists above the corresponding photodetector PD, so that the opening degree of T3 determined by the photoelectric signal and the weight voltage signal Vw can be freely set when the shielding object exists or does not exist above the photodetector PD.

The photoelectric identification signal Vout corresponding to the area which is preset to be shielded is mapped to be a digital 1, the photoelectric identification signal Vout corresponding to the area which is not shielded is mapped to be a digital 0, and when a shielding object is placed on the display panel, some photoelectric detectors PD are shielded, and some photoelectric detectors PD are not shielded. The voltage signal of the first node Q, i.e. the photoelectric signal, can be regarded as V _OC The recognition as a digital 0 is performed in conjunction with the weight voltage signal Vw. The voltage signal of the first node Q, that is, the photoelectric signal, is the input voltage signal Vin, and the voltage signal Vw is combined to identify the voltage signal as a digital 1. This results in an array of binary digits corresponding to the outline of the mask for the array of optoelectronic recognition modules 300 of the entire display panel. Therefore, when the gate scan signal Vscan1 is written into the optoelectronic recognition module 300 to control the input voltage signal Vin to be written into the first node Q, if an obstruction is placed on the display panel, the two-way input corresponding to the outline of the obstruction is recognized based on the above principleAnd (5) manufacturing a digital array. Moreover, when the same gate scan signal Vscan1 is connected to the pixel driving module 200 by the photoelectric recognition module 300, that is, the gate scan signal Vscan1 writes the data voltage Vdata line by line to the pixel driving module 200 to display a frame of image, the gate scan signal Vscan1 writes the input voltage signal Vin to the photoelectric recognition module 300 to output the corresponding photoelectric recognition signal Vout to realize the recognition of the shielding object, and the photoelectric recognition module 300 and the pixel driving module 200 share the gate scan line to minimize the wiring arrangement of the photoelectric recognition module 300.

After each frame of operation, the output photoelectric identification signal Vout after the combined action of the photoelectric signals of the photoelectric identification modules 300 and the weight voltage signal Vw in the array of the photoelectric identification modules 300 of the whole display panel is read out and recorded, and compared with a corresponding tag to map the photoelectric identification signal Vout to a corresponding tag. The weight voltage signal of each of the optoelectronic identification modules 300 is gradually adjusted after each frame operation. The adjustment trend is to gradually reduce the error between the total output photoelectric identification signal and the designated label value. Until the error between the final output result and the specified label is minimized. After a sufficient number of iterations, when the error is small enough, the corresponding weight voltage signal array will be recorded, and when a new gesture is placed over the display, the type of gesture to be removed can be predicted. Each of the optoelectronic identification modules 300 is first randomly given a weighted voltage signal. And then, after all output layer results are obtained through operation, the error between the label and the output layer is obtained, and the error is larger. And continuously adjusting the weight voltage signal according to a gradient descent algorithm to reduce the error value until the error value reaches an acceptable range, wherein the gradient descent algorithm can be freely set according to the requirement of the training process. The direction of adjustment is to make the error smaller and smaller, the weight voltage signal of each photoelectric recognition module 300 is not the same, and each frame will change during the training process, and the total trend of the change is to make the overall recognition error smaller and smaller, that is, the training accuracy is higher and higher.

In this embodiment, the photodetection unit 310, the nerve implantation unit 320 and the pixel driving module 200 are integrated on the substrate 100, so that the integration level is high, the operation of the photodetection module 300 and the pixel driving module 200 is relatively independent, the photodetection module and the pixel driving module 200 are not affected, and the processing speed is high.

As shown in fig. 5, an embodiment of the present application provides a method for identifying a shielding object, which is applied to the display panel described in the foregoing embodiment, and includes the following steps:

s1, when each pixel driving module in the display panel drives a pixel to display a picture, acquiring a photoelectric signal output by a photoelectric detection unit in each photoelectric identification module;

s2, outputting a photoelectric identification signal according to the photoelectric signal and a preset weight voltage signal based on a nerve implantation unit in the photoelectric identification module, which is electrically connected with the photoelectric detection unit;

s3, determining target shielding object identifiers corresponding to the photoelectric identification modules based on a preset identification signal mapping table, wherein the photoelectric identification signals in the preset identification signal mapping table correspond to the shielding object identifiers one by one;

s4, determining contour information of the shielding object according to the target shielding object identification.

Specifically, when each pixel driving module in the display panel drives a pixel to perform image display, the scanning signals are written row by row, so that the photoelectric recognition module can also recognize whether a shielding object exists above the display panel. The photoelectric signals output by the photoelectric detection units in the photoelectric recognition modules are obtained, the nerve implantation units in the photoelectric recognition modules are electrically connected with the photoelectric detection units, and when no shielding object exists above the display panel to shield the light rays entering the photoelectric recognition modules, the photoelectric signals input to the nerve implantation units by the photoelectric detection units are photoelectric sensing signals V _OC . When a shielding object is arranged above the display panel to shield the light rays entering the photoelectric detection unit, the photoelectric signal input to the nerve implantation unit by the photoelectric detection unit at the position where the shielded light rays are arranged is an input voltage signal V _in . Due to the photo-induced signal V _OC An amplifier may be provided between the photodetection unit and the nerve implantation unit to amplify the photoelectric signal.

The nerve implantation unit outputs photoelectric identification signals according to the photoelectric signals and preset weight voltage signals, and determines target shielding object identifiers corresponding to the photoelectric identification signals of all the photoelectric identification modules based on a preset identification signal mapping table, wherein the photoelectric identification signals and the shielding object identifiers in the preset identification signal mapping table are in one-to-one correspondence. For example, a preset identification signal mapping table is set to be 1 for a shielding object mark with a shielding object, and a binary digit array corresponding to the contour of the shielding object is finally obtained if the shielding object mark without the shielding object is set to be 0, so that the contour information of the shielding object is determined.

The present embodiment provides a display device including the display panel according to any one of the above embodiments.

In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.

The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.

The display panel, the method for identifying the shielding object and the display device provided by the embodiment of the application are described in detail, and specific examples are applied to illustrate the principle and the implementation of the invention, and the description of the above examples is only used for helping to understand the method and the core idea of the invention; meanwhile, as those skilled in the art will vary in the specific embodiments and application scope according to the ideas of the present invention, the present description should not be construed as limiting the present invention in summary.

Claims

1. A display panel, comprising:

the substrate is provided with a plurality of grooves,

2. The display panel of claim 1, wherein the number of the optoelectronic recognition modules in a target row is equal to or less than the number of the pixel driving modules; and/or the number of the groups of groups,

3. The display panel of claim 1, wherein the scan signal comprises a first scan signal, and the photo-detection unit further comprises a photo-switching transistor and a photo-detector;

the grid electrode of the photoelectric switch transistor is connected with the first scanning signal, one of the source electrode and the drain electrode of the photoelectric switch transistor is connected with an input voltage signal, the other of the source electrode and the drain electrode of the photoelectric switch transistor is connected with a first node, and the first node is connected with the nerve implantation unit;

4. The display panel of claim 3, wherein the photodetector is configured as a photodiode based on control of the first scan signal to write the input voltage signal to the first node;

5. The display panel of claim 3, wherein the scan signal comprises a second scan signal, and the neural implant unit comprises a dual gate transistor and a first switching transistor;

6. The display panel of claim 5, wherein the neural implant unit further comprises a second switching transistor, a gate of the second switching transistor being connected to the first scanning signal, one of a source and a drain of the second switching transistor being connected to the weight voltage signal, and the other of the source and the drain of the second switching transistor being connected to the second gate of the dual-gate transistor.

7. The display panel of claim 5, wherein the optoelectronic recognition module further comprises an amplifier connected between the first node and the first gate of the double-gate transistor, the amplifier to receive and amplify a voltage of the first node.

8. The display panel of claim 7, wherein the amplifier includes a first amplifying transistor and a second amplifying transistor;

9. A method for identifying a shielding object, applied to the display panel according to any one of claims 1 to 8, comprising:

10. A display device comprising the display panel according to any one of claims 1 to 8.