CN117826283A - Optical structure and electronic device - Google Patents

Optical structure and electronic device Download PDF

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Publication number
CN117826283A
CN117826283A CN202410175032.9A CN202410175032A CN117826283A CN 117826283 A CN117826283 A CN 117826283A CN 202410175032 A CN202410175032 A CN 202410175032A CN 117826283 A CN117826283 A CN 117826283A
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sub
film layer
film
optical structure
substrate
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魏博洋
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Vivo Mobile Communication Co Ltd
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Vivo Mobile Communication Co Ltd
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Priority to CN202410175032.9A priority Critical patent/CN117826283A/en
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • G02B1/113Anti-reflection coatings using inorganic layer materials only
    • G02B1/115Multilayers

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

The application discloses an optical structure and electronic equipment belongs to the electronic equipment field. The optical structure includes: a substrate and a first anti-reflection film layer disposed on one side of the substrate; the first antireflection film layer comprises a first sub-film layer and a second sub-film layer which are alternately arranged, the refractive index of the first sub-film layer is larger than that of the second sub-film layer, and the second sub-film layer is in contact with the substrate; the first film layer comprises Si 3 N 4 The second film layer comprises SiO x N y Wherein x is more than 0 and less than 4, and y is more than 0 and less than 2.

Description

Optical structure and electronic device
Technical Field
The application belongs to the field of electronic equipment, and particularly relates to an optical structure and electronic equipment.
Background
With the development of technology, electronic devices have become an indispensable item in daily life, through which images can be photographed, videos can be viewed, remote communication, and the like. Generally, electronic equipment is provided with display screen and camera module, and display screen and camera module all are provided with optical structure, and wherein, optical structure can be the glass of protection of camera module, and optical structure can also be the glass in the display screen. For example, the optical structure is disposed on the camera module, and after the light passes through the optical structure, the light-sensitive chip in the camera module can convert the light into an image. In the related art, in order to ensure the hardness of the optical structure, the refractive index of the optical structure has poor effect, which affects the performance of the electronic device.
Disclosure of Invention
An object of the embodiment of the application is to provide an optical structure, a camera module, a display screen and electronic equipment, and at least solve the problems that the hardness and refractive index of the optical structure are poor and the performance of the electronic equipment is affected.
In a first aspect, embodiments of the present application provide an optical structure, the optical structure comprising: a substrate and a first anti-reflection film layer disposed on one side of the substrate;
the first antireflection film layer comprises a first sub-film layer and a second sub-film layer which are alternately arranged, the refractive index of the first sub-film layer is larger than that of the second sub-film layer, and the second sub-film layer is in contact with the substrate;
the first sub-film layer comprises Si 3 N 4 The second sub-film layer comprises SiO x N y Wherein x is more than 0 and less than 4, and y is more than 0 and less than 2.
In a second aspect, embodiments of the present application provide an electronic device including the optical structure described in the first aspect.
In this embodiment of the present application, since the refractive index of the first sub-film layer is greater than that of the second sub-film layer, and the plurality of first sub-film layers and the plurality of second sub-film layers are stacked and alternately distributed, and the second sub-film layer contacts one surface of the substrate, this is equivalent to stacking the first sub-film layer and the second sub-film layer on the substrate, so when light irradiates the substrate, the light sequentially passes through the first sub-film layer and the second sub-film layer, and since the refractive indexes of the first film layer and the second film layer are different, when the light passes through the first sub-film layer and the second sub-film layer, the light is reflected less, so that the light passes through the first anti-reflection film layer more, and the light passes through the substrate. While the first sub-film layer comprises Si 3 N 4 The second sub-film layer comprises SiO x N y ,Si 3 N 4 With SiO x N y The hardness of the first antireflection film layer is made larger. That is, in this embodiment of the present application, the first sub-film layer and the second sub-film layer are alternately stacked on the substrate, so that the refractive index of the first sub-film layer and the refractive index of the second sub-film layer are different, and when light passes through the first sub-film layer and the second sub-film layer, the light can be less reflected, and the light is more refracted, so that the light passes through the first sub-film layer and the second sub-film layer more, that is, passes through the first antireflection film layer more, that is, the refractive index of the optical structure is improved, so that the refractive index of the optical structure is better, and otherwiseIn addition, the first sub-film layer comprises Si 3 N 4 The second sub-film layer comprises SiO x N y ,Si 3 N 4 With SiO x N y The hardness of the first sub-film layer and the second sub-film layer can be higher, so that the hardness of the optical structure can be improved.
Drawings
FIG. 1 is a schematic view of an optical structure provided in an embodiment of the present application;
FIG. 2 is a spectral diagram showing the transmittance of an optical structure according to an embodiment of the present application;
FIG. 3 is a schematic view showing the reflectivity of the first anti-reflective coating layer when light rays provided in the embodiments of the present application are irradiated to the first anti-reflective coating layer at different angles;
FIG. 4 is a schematic view showing the reflectivity of the second anti-reflective coating layer when light rays provided in the embodiments of the present application are irradiated to the second anti-reflective coating layer at different angles;
FIG. 5 is a schematic diagram showing transmittance of an optical structure when light rays provided in the embodiments of the present application are irradiated to a first anti-reflective coating layer at different angles;
fig. 6 shows a schematic diagram of an electronic device according to an embodiment of the present application.
Reference numerals:
100: an optical structure; 10: a first antireflection film layer; 11: a first sub-film layer; 12: a second sub-film layer; 20: a substrate; 201: a front face; 202: a back surface; 30: a second antireflection film layer; 31: a third sub-film layer; 32: a fourth sub-film layer; 33: and a fifth sub-film layer.
Detailed Description
The features of the terms "first", "second", and the like in the description and in the claims of this application may be used for descriptive or implicit inclusion of one or more such features. In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more. Furthermore, in the description and claims, "and/or" means at least one of the connected objects, and the character "/", generally means that the associated object is an "or" relationship.
In the description of the present application, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," etc. indicate orientations or positional relationships based on the orientations or positional relationships illustrated in the drawings, are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be configured and operated in a particular orientation, and therefore should not be construed as limiting the present application.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
As shown in fig. 1 to 5, the optical structure includes: a substrate 20 and a first anti-reflection film layer 10 disposed at one side of the substrate 20.
The first antireflection film layer 10 includes a first sub-film layer 11 and a second sub-film layer 12 alternately arranged, the refractive index of the first sub-film layer 11 is greater than that of the second sub-film layer 12, and the second sub-film layer 12 is in contact with the substrate 20; the first sub-film layer 11 comprises Si 3 N 4 The second sub-film layer 12 comprises SiO x N y Wherein x is more than 0 and less than 4, and y is more than 0 and less than 2.
In the embodiment of the present application, since the refractive index of the first sub-film layer 11 is greater than that of the second sub-film layer 12, the first sub-film layer 11 and the second sub-film layer 12 are alternately arranged, and the second sub-film layer 12 is in contact with the substrate 20, so that it is equivalent to laminating the first sub-film layer 11 and the second sub-film layer 12 on the front surface 201 of the substrate 20, thereby forming a light-emitting deviceWhen the light irradiates onto the front surface 201 of the substrate 20, the light passes through the first sub-film 11 and the second sub-film 12 in sequence, and the refractive indexes of the first sub-film 11 and the second sub-film 12 are different, so that the light is less reflected when passing through the first sub-film 11 and the second sub-film 12, so that the light passes through the first anti-reflection film 10 more, and the light passes through the substrate 20. While the first sub-film layer 11 comprises Si 3 N 4 The second sub-film layer 12 comprises SiO x N y ,Si 3 N 4 With SiO x N y The hardness of the first antireflection film layer 10 is made larger. That is, in this embodiment of the present application, by stacking the first sub-film layer 11 and the second sub-film layer 12 on the substrate 20, the refractive indexes of the first sub-film layer 11 and the second sub-film layer 12 are different, so that the light ray may be less reflected when passing through the first sub-film layer 11 and the second sub-film layer 12, and more light ray is refracted, so that more light ray passes through the first sub-film layer 11 and the second sub-film layer 12, i.e. more light ray passes through the first antireflection film layer 10, i.e. the refractive index of the optical structure is improved, so that the refractive index of the optical structure is better, and in addition, the first sub-film layer 11 includes Si 3 N 4 The second sub-film layer 12 comprises SiO x N y ,Si 3 N 4 With SiO x N y The hardness of the first sub-film layer 11 and the second sub-film layer 12 can be increased.
In addition, in the embodiment of the present application, the substrate 20 is formed of a light-permeable material, i.e., the substrate 20 is light-permeable. Specifically, the substrate 20 may include any one of glass and sapphire. Wherein the substrate 20 may be formed of only glass, and the substrate 20 may also be formed of only sapphire. When the optical structure 100 is applied to the camera module, at this time, the optical structure 100 corresponds to a protection piece for protecting a lens on the camera module, when a user touches the camera module, the user touches the optical structure 100 first, and the hardness of the optical structure 100 is better, so that the lens in the camera module can be better protected, and the refractive index of the optical structure 100 is better, so that light can pass through the optical structure 100 more when shooting through the camera module, more reflection of the light optical structure 100 is avoided, and the shooting effect of the camera module can be improved. When the optical structure 100 is applied to the display screen, at this time, the optical structure 100 corresponds to the glass on the outermost layer of the display screen, when the user touches the display screen, the user will touch the optical structure 100 first, and the hardness of the optical structure 100 is better, so that better protection can be provided for the display module in the display screen.
In the embodiment of the present application, the refractive index of the first sub-film layer 11 ranges from 1.95 to 2.05, and the refractive index of the second sub-film layer 12 ranges from 1.53 to 1.70.
By this arrangement, the light rays can be better interfered when passing through the first sub-film layer 11 and the second sub-film layer 12, so that more light rays pass through the first anti-reflection film layer 10.
The refractive index of the first sub-film 11 may be any value from 1.95 to 2.05, for example, the refractive index of the first sub-film 11 is 1.95, for example, the refractive index of the first sub-film 11 is 1.97, for example, the refractive index of the first sub-film 11 is 1.99, for example, and for example, the refractive index of the first sub-film 11 is 2.01. The specific values of the refractive index of the first sub-film layer 11 are not limited herein. The refractive index of the second sub-film layer 12 may be any one of 1.53 to 1.70, for example, the refractive index of the second sub-film layer 12 is 1.53, for example, the refractive index of the second sub-film layer 12 is 1.58, for example, the refractive index of the second sub-film layer 12 is 1.63, for example, the refractive index of the second sub-film layer 12 is 1.68, for example, the refractive index of the second sub-film layer 12 is 1.70. The embodiment of the present application is not limited herein with respect to specific values of the refractive index of the second sub-film layer 12.
In addition, in the embodiment of the present application, the thicknesses of the first sub-film layers 11 and the second sub-film layers 12 are not equal, the number of the first sub-film layers 11 is plural, the thicknesses of at least two first sub-film layers 11 are not equal, the number of the second sub-film layers 12 is plural, and the thicknesses of at least two second sub-film layers 12 are not equal to each other.
By such an arrangement, light rays can be better interfered as they sequentially pass through the first sub-film layer 11 and the second sub-film layer 12. The light passes through the first sub-film layer 11, the light is refracted in the first sub-film layer 11, then the light passes through the second sub-film layer 12, the light is refracted in the second sub-film layer 12, the refractive index of the first sub-film layer 11 is different from that of the second sub-film layer 12, and the thickness is different, so that the light is refracted by materials with different refractive indexes when passing through the first sub-film layer 11 and the second sub-film layer 12, and the lengths of paths taken by the light in each film layer are different, so that the light is better interfered, more light passes through the first sub-film layer 11 and the second sub-film layer 12, namely more light passes through the first anti-reflection film layer 10, and less reflection is performed on the first anti-reflection film layer 10. That is, by such an arrangement, light rays are less reflected when passing through the first anti-reflection film layer 10, and thus more light rays pass through the first anti-reflection film layer 10.
For example, as shown in Table 1, layer represents a film layer, material represents a Material, n represents a refractive index, K represents an extinction coefficient, thickness represents a Thickness, wherein from layer 1 to layer 23 are a first antireflection film layer 10, si 3 N 4 Represents a first sub-film layer 11, siO x N y The second sub-film layer 12 is shown, and as can be seen from table 1, the thicknesses of the first sub-film layer 11 and the second sub-film layer 12 are different from each other, and the thicknesses of the first sub-film layer 11 and the second sub-film layer 12 are different from each other.
TABLE 1
Layer Material N(550nm) K(550nm) Thickness(nm)
Air-conditioner 1 / /
1 SiO x N y 1.63 5.00E-04 45
2 Si 3 N 4 2.01 5.00E-04 87
3 SiO x N y 1.63 5.00E-04 71
4 Si 3 N 4 2.01 5.00E-04 83
5 SiO x N y 1.63 5.00E-04 14
6 Si 3 N 4 2.01 5.00E-04 10
7 SiO x N y 1.63 5.00E-04 63
8 Si 3 N 4 2.01 5.00E-04 73
9 SiO x N y 1.63 5.00E-04 50
10 Si 3 N 4 2.01 5.00E-04 31
11 SiO x N y 1.63 5.00E-04 44
12 Si 3 N 4 2.01 5.00E-04 52
13 SiO x N y 1.63 5.00E-04 63
14 Si 3 N 4 2.01 5.00E-04 27
15 SiO x N y 1.63 5.00E-04 70
16 Si 3 N 4 2.01 5.00E-04 81
17 SiO x N y 1.63 5.00E-04 23
18 Si 3 N 4 2.01 5.00E-04 33
19 SiO x N y 1.63 5.00E-04 34
20 Si 3 N 4 2.01 5.00E-04 31
21 SiO x N y 1.63 5.00E-04 15.5
22 Si 3 N 4 2.01 5.00E-04 93.68
23 SiO x N y 1.63 5.00E-04 57
24 Glass 1.5 0.8
25 SiO 2 1.46 5.00E-05 5
26 Ti 3 O 5 2.41 5.00E-04 4.5
27 SiO 2 1.46 5.00E-05 60
28 Ti 3 O 5 2.41 5.00E-04 4.5
29 SiO 2 1.46 5.00E-05 183.3
30 Ti 3 O 5 2.41 5.00E-04 13.82
31 SiO 2 1.46 5.00E-05 29.27
32 Ti 3 O 5 2.41 5.00E-04 66.51
33 SiO 2 1.46 5.00E-05 10.59
34 Ti 3 O 5 2.41 5.00E-04 28.12
35 MgF 2 1.38 5.00E-05 95.72
In addition, in the embodiment of the present application, the thicknesses of at least two first sub-film layers 11 are different from each other, where only two first sub-film layers 11 may be different from each other, and the thicknesses of the remaining first sub-film layers 11 are equal, and of course, the thicknesses of the first sub-film layers 11 may be greater than two, and the thicknesses of all the first sub-film layers 11 may be different from each other. In addition, the thicknesses of at least two second sub-film layers 12 are not equal to each other, where only two second sub-film layers 12 may be not equal to each other, and the thicknesses of the remaining second sub-film layers 12 are equal to each other, and of course, the thicknesses of the second sub-film layers 12 that are greater than two may be not equal to each other, and the thicknesses of all the second sub-film layers 12 may not be equal to each other.
In addition, in the embodiment of the present application, the thickness of the first antireflection film layer 10 is 1150nm. By such an arrangement, the thickness of the first antireflection film layer 10 is made smaller, so that the cost of forming the first antireflection film layer 10 can be reduced, resulting in a reduction in the cost of the optical structure 100.
In addition, in the embodiment of the present application, when the first anti-reflection film layer 10 is formed, it may be formed on the substrate 20 by way of ionization. The specific process parameters can be shown in table 2:
TABLE 2
In addition, in the present embodiment, the hardness of the first antireflection film layer 10 is 15.535GPa. By such an arrangement, the hardness of the first antireflection film layer 10 is made larger, so that the first antireflection film layer 10 can make better protection of the substrate 20, and the hardness of the optical structure 100 is made larger.
Additionally, in some embodiments, the optical structure 100 may further include a second anti-reflective film layer 30 disposed on a side of the substrate 20 remote from the first anti-reflective film layer 10; the second antireflection film layer 30 includes a third sub-film layer 31 and a fourth sub-film layer 32 alternately arranged, the refractive index of the third sub-film layer 31 is greater than the refractive index of the fourth sub-film layer 32, and the fourth sub-film layer 32 is in contact with the back surface 202 of the substrate 20; the third sub-film layer 31 includes Ta 2 O 5 、Ti 3 O 5 Any of the fourth sub-film layers 32 includes SiO 2 、Al 2 O 3 Any one of them.
With this arrangement, after the light passes through the first antireflection film 10 and the substrate 20, the light passes through the second antireflection film 30, and in the second antireflection film 30, a plurality of third sub-films 31 and a plurality of fourth sub-films 32 are stacked, and the third sub-films 31 and the fourth sub-films 32 are alternately distributed, and the fourth sub-films 32 are in contact with the back 202 of the substrate 20, so that the light can be further reduced in reflection, and more light passes through the second antireflection film 30. In addition, by providing the second antireflection film layer 30, the hardness of the optical structure 100 can be further improved, so that the hardness of the optical structure 100 can be further improved.
In the embodiment of the present application, according to the formula of the antireflection film, wherein,beta represents a low reflectance bandwidth, lambda max Represents the wavelength maximum, lambda of the low reflection region min Indicating the minimum of the wavelength in the low reflection region. In addition, according to the formula->Wherein L is the refractive index of the outermost film; d=n H -n L D may be defined as: a difference in high refractive index excluding the outermost layer, n representing the refractive index; t is the total optical thickness of the film system toThe average wavelength is expressed by a multiple of the average wavelength, and according to this formula, in order to obtain a lower average reflectance, it is required to satisfy that D is larger, L is as small as possible, and T is as large as possible, so in this embodiment of the present application, the refractive index of the third sub-film layer 31 may be set to 2.41, and the refractive index of the fourth sub-film layer 32 is set to 1.46.
In addition, in the embodiment of the present application, the fourth sub-film layer 32 may include only SiO 2 May also include only Al 2 O 3 . The third sub-film layer 31 may include only Ta 2 O 5 May also include only Ti 3 O 5
In addition, in the embodiment of the present application, among the plurality of first sub-film layers 11 and the plurality of second sub-film layers 12 that are stacked, the film layer that has the largest distance from the front surface 201 of the substrate 20 is the second sub-film layer 12. With such an arrangement, when light irradiates the first anti-reflective film layer 10, the light irradiates the second sub-film layer 12 first, and the refractive index of the second sub-film layer 12 is smaller than that of the first sub-film layer 11, so that the light is less reflected, and more light passes through the first anti-reflective film layer 10.
Additionally, in some embodiments, the second anti-reflective film layer 30 may further include a fifth sub-film layer 33; the refractive index of the fifth sub-film layer 33 is smaller than that of the fourth sub-film layer 32, and among the plurality of third sub-film layers 31 and the plurality of fourth sub-film layers 32 which are stacked, the film layer having the largest distance from the back surface 202 of the substrate 20 is the third sub-film layer 31, and the fifth sub-film layer 33 is disposed on the surface of the third sub-film layer 31 facing away from the substrate 20; the fifth sub-film layer 33 includes MgF 2
Through such arrangement, the fifth sub-film layer 33 can ensure the stability of the third sub-film layer 31 and the fourth sub-film layer 32, and by arranging the fifth sub-film layer 33, the light can pass through the fifth sub-film layer 33 after passing through the third sub-film layer 31 and the fourth sub-film layer 32, so that the reflectivity of the optical structure 100 meets the requirement, and more light passes through the optical structure 100 and less light is reflected.
In addition, in the embodiment of the present application, the refractive index of the fifth sub-film layer 33 may be 1.38.
In addition, in some embodiments, the thicknesses of the third sub-film layer 31, the fourth sub-film layer 32, and the fifth sub-film layer 33 are different from each other, the thicknesses of the third sub-film layer 31 and the fourth sub-film layer 32 are multiple, the thicknesses of at least two third sub-film layers 31 are different, and the thicknesses of at least two fourth sub-film layers 32 are different.
By such an arrangement, light rays can be better interfered as they sequentially pass through the third sub-film layer 31 and the fourth sub-film layer 32. The light passes through the third sub-film 31, the light is refracted in the third sub-film 31, then the light passes through the fourth sub-film 32, the light is refracted in the fourth sub-film 32, the refractive index of the third sub-film 31 is different from the refractive index of the fourth sub-film 32, and the thickness is different, so that the light is refracted by the materials with different refractive indexes when passing through the third sub-film 31 and the fourth sub-film 32, and the path length of the light in each film is different, so that the light is better interfered, more light passes through the third sub-film 31 and the fourth sub-film 32, namely more light passes through the second anti-reflection film 30, and less reflection is performed on the second anti-reflection film 30.
For example, as shown in Table 1, siO 2 Represents a fourth sub-film layer 32, ti 3 O 5 A third sub-film layer 31 is shown.
As another example, as shown in Table 3, siO 2 Represents a fourth sub-film layer 32, ti 3 O 5 Representing a third sub-film 31, mgF 2 A fifth sub-film layer 33 is shown.
TABLE 3 Table 3
Layer Material N(550nm) K(550nm) Thickness(nm)
Medium Air-conditioner 1 / /
11 MgF 2 2.41 5.00E-05 95.72
10 Ti 3 O 5 1.46 5.00E-04 28.12
9 SiO 2 2.41 5.00E-05 10.59
8 Ti 3 O 5 1.46 5.00E-04 66.51
7 SiO 2 2.41 5.00E-05 29.27
6 Ti 3 O 5 1.46 5.00E-04 13.82
5 SiO 2 2.41 5.00E-05 183.3
4 Ti 3 O 5 1.46 5.00E-04 4.5
3 SiO 2 2.41 5.00E-05 60
2 Ti 3 O 5 1.46 5.00E-04 4.5
1 SiO 2 2.41 5.00E-05 5
Subsrate Glass 1.5 0 /
In addition, in the embodiment of the present application, the thicknesses of at least two third sub-film layers 31 are not equal, where only two third sub-film layers 31 may be equal in thickness, and the thicknesses of the remaining third sub-film layers 31 may be equal, or of course, the thicknesses of more than two third sub-film layers 31 may be unequal, or the thicknesses of all third sub-film layers 31 may be unequal. In addition, the thicknesses of at least two fourth sub-film layers 32 are not equal, where only two fourth sub-film layers 32 may be not equal in thickness, and the thicknesses of the remaining fourth sub-film layers 32 are equal, and of course, the thicknesses of more than two fourth sub-film layers 32 may be not equal, and the thicknesses of all fourth sub-film layers 32 may be not equal.
In addition, in some embodiments, the thickness of the second anti-reflective film layer 30 ranges from 450nm to 600nm. By such an arrangement, the thickness of the second antireflection film layer 30 can be made smaller, reducing the cost of the optical structure 100.
It should be noted that the thickness of the second antireflection film layer 30 may be any value from 450nm to 600nm. For example, the thickness of the second anti-reflection film layer 30 is 450nm, for example, the thickness of the second anti-reflection film layer 30 is 480nm, for example, the thickness of the second anti-reflection film layer 30 is 510nm, for example, the thickness of the second anti-reflection film layer 30 is 550nm, for example, and for example, the thickness of the second anti-reflection film layer 30 is 600nm. The examples of the present application are not limited thereto.
In addition, in the embodiment of the present application, when the second anti-reflection film layer 30 is formed, it may be formed on the substrate 20 by way of ionization. The specific process parameters can be shown in table 4:
TABLE 4 Table 4
In addition, in the embodiments herein, the average reflectivity of the optical structure 100 is less than 1.5%, and the transmittance of the optical structure 100 is greater than 96.5%.
When the light irradiates the optical structure 100 at 0 °, which is equivalent to the light being perpendicular to the first anti-reflective film layer 10 and irradiated to the first anti-reflective film layer 10, the average reflectivity of the optical structure 100 is less than 1.5%, and when the light irradiates the optical structure 100 at 30 °, which is equivalent to the light having an included angle of 60 ° with the first anti-reflective film layer 10, the average reflectivity of the optical structure 100 is less than 1.5%. Wherein, the light refers to visible light, and the wavelength of the visible light is between 420nm and 680 nm.
In addition, when the light irradiates the optical structure 100 at 0 °, which is equivalent to the light perpendicularly to the first anti-reflective film layer 10, the light transmittance of the optical structure 100 may be greater than 97.5%, and when the light irradiates the optical structure 100 at 30 °, which is equivalent to the light having an angle of 60 ° with the first anti-reflective film layer 10, the light transmittance of the optical structure 100 may be greater than 96.5%.
In addition, in the embodiment of the present application, the optical structure 100 provided in the embodiment of the present application is subjected to optical ring measurement, and the spectral offset after optical ring measurement is less than 10nm, so that the actual requirements can be satisfied.
In the embodiment of the present application, since the refractive index of the first sub-film 11 is greater than that of the second sub-film 12, the plurality of first sub-films 11 and the plurality of second sub-films 12 are stacked, and the first sub-films 11 and the second sub-films 12 are alternately distributed, and the second sub-film 12 is in contact with the front surface 201 of the substrate 20, thus, the stacking of the first sub-film 11 and the second sub-film on the front surface 201 of the substrate 20 is equivalent toThe film 12 is configured such that when light irradiates the front surface 201 of the substrate 20, the light passes through the first sub-film 11 and the second sub-film 12 in sequence, such that the refractive indexes of the first sub-film 11 and the second sub-film 12 are different, so that the light is less reflected when the light passes through the first sub-film 11 and the second sub-film 12, such that the light passes through the first anti-reflection film 10 more, and such that the light passes through the substrate 20. While the first sub-film layer 11 comprises Si 3 N 4 The second sub-film layer 12 comprises SiO x N y ,Si 3 N 4 With SiO x N y The hardness of the first antireflection film layer 10 is made larger. That is, in this embodiment, by stacking the first sub-film layer 11 and the second sub-film layer 12 on the front surface 201 of the substrate 20, the refractive indexes of the first sub-film layer 11 and the second sub-film layer 12 are different, so that the light ray may be less reflected when passing through the first sub-film layer 11 and the second sub-film layer 12, and more refracted, so that the light ray passes through the first sub-film layer 11 and the second sub-film layer 12 more, i.e. passes through the first antireflection film layer 10 more, i.e. increases the refractive index of the optical structure, so that the refractive index of the optical structure is better, and in addition, the first sub-film layer 11 includes Si 3 N 4 The second sub-film layer 12 comprises SiO x N y ,Si 3 N 4 With SiO x N y The hardness of the first sub-film layer 11 and the second sub-film layer 12 can be increased.
Embodiments of the present application provide a camera module including the optical structure 100 in any of the above embodiments.
Embodiments of the present application provide a display screen that includes the optical structure 100 of any of the embodiments described above.
An embodiment of the present application provides an electronic device, as shown in fig. 6, where the electronic device includes a camera module in the foregoing embodiment and/or a display screen in the foregoing embodiment.
It should be noted that, in the embodiment of the present application, the electronic device includes, but is not limited to, a controller, an intelligent device, a terminal product, and the like, where the intelligent device is, for example, a smart phone, a smart television, a smart speaker, a smart robot, a VR device, an AR device, an XR device, and the like, and the terminal product includes products such as a personal computer, a tablet computer, and the like.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present application have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the application, the scope of which is defined by the claims and their equivalents.

Claims (10)

1. An optical structure, the optical structure comprising: a substrate and a first anti-reflection film layer disposed on one side of the substrate;
the first antireflection film layer comprises a first sub-film layer and a second sub-film layer which are alternately arranged, the refractive index of the first sub-film layer is larger than that of the second sub-film layer, and the second sub-film layer is in contact with the substrate;
the first sub-film layer comprises Si 3 N 4 The second sub-film layer comprises SiO x N y Wherein x is more than 0 and less than 4, and y is more than 0 and less than 2.
2. The optical structure of claim 1, further comprising a second anti-reflective film layer disposed on a side of the substrate remote from the first anti-reflective film layer;
the second antireflection film layer comprises a third sub-film layer and a fourth sub-film layer which are alternately arranged, the refractive index of the third sub-film layer is larger than that of the fourth sub-film layer, and the fourth sub-film layer is in contact with the substrate;
the third sub-film layer comprises Ta 2 O 5 、Ti 3 O 5 Any one of the fourth sub-film layers comprises SiO 2 、Al 2 O 3 Any one of them.
3. The optical structure of claim 2, wherein the second anti-reflective film layer further comprises a fifth sub-film layer;
the refractive index of the fifth sub-film layer is smaller than that of the fourth sub-film layer, and among the plurality of third sub-film layers and the plurality of fourth sub-film layers which are stacked, the film layer with the largest distance from the substrate is the third sub-film layer, and the fifth sub-film layer is arranged on the surface of the third sub-film layer, which is away from the substrate;
the fifth sub-film layer comprises MgF 2
4. The optical structure of claim 1, wherein among the plurality of first sub-film layers and the plurality of second sub-film layers stacked, a film layer having a largest distance from the substrate is the second sub-film layer.
5. The optical structure of claim 1, wherein the thickness of the first sub-film layer is not equal to the thickness of the second sub-film layer, the first sub-film layer and the second sub-film layer are each multiple, and the thickness of at least two of the first sub-film layers is not equal to each other, and the thickness of at least two of the second sub-film layers is not equal to each other.
6. The optical structure of claim 1, wherein the first sub-film layer has a refractive index in the range of 1.95-2.05 and the second sub-film layer has a refractive index in the range of 1.53-1.70.
7. An optical structure as recited in claim 3, wherein the thickness of the third sub-film layer, the thickness of the fourth sub-film layer, and the thickness of the fifth sub-film layer are different from each other, the third sub-film layer and the fourth sub-film layer are each plural, and the thicknesses of at least two of the third sub-film layers are different from each other, and the thicknesses of at least two of the fourth sub-film layers are different from each other.
8. An optical structure as recited in claim 3, wherein the average reflectivity of the optical structure is less than 1.5%.
9. An optical structure as recited in any one of claims 1-8, wherein said substrate comprises any one of glass, sapphire.
10. An electronic device, characterized in that it comprises the optical structure of any one of claims 1-9.
CN202410175032.9A 2024-02-07 2024-02-07 Optical structure and electronic device Pending CN117826283A (en)

Priority Applications (1)

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CN202410175032.9A CN117826283A (en) 2024-02-07 2024-02-07 Optical structure and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202410175032.9A CN117826283A (en) 2024-02-07 2024-02-07 Optical structure and electronic device

Publications (1)

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CN117826283A true CN117826283A (en) 2024-04-05

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