CN117821181A - Long-life chip cleaning solution and preparation method and application thereof - Google Patents
Long-life chip cleaning solution and preparation method and application thereof Download PDFInfo
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- CN117821181A CN117821181A CN202311699528.8A CN202311699528A CN117821181A CN 117821181 A CN117821181 A CN 117821181A CN 202311699528 A CN202311699528 A CN 202311699528A CN 117821181 A CN117821181 A CN 117821181A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 73
- 238000002360 preparation method Methods 0.000 title abstract description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000007788 liquid Substances 0.000 claims abstract description 35
- 239000013538 functional additive Substances 0.000 claims abstract description 20
- 238000005260 corrosion Methods 0.000 claims abstract description 13
- 230000007797 corrosion Effects 0.000 claims abstract description 13
- 239000003112 inhibitor Substances 0.000 claims abstract description 13
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 11
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 10
- 239000012498 ultrapure water Substances 0.000 claims abstract description 10
- 150000007524 organic acids Chemical class 0.000 claims abstract description 9
- 230000000274 adsorptive effect Effects 0.000 claims abstract description 5
- -1 azole compound Chemical class 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000005406 washing Methods 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 239000011777 magnesium Substances 0.000 claims description 7
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 6
- 239000000194 fatty acid Substances 0.000 claims description 6
- 229930195729 fatty acid Natural products 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- HQKMJHAJHXVSDF-UHFFFAOYSA-L magnesium stearate Chemical compound [Mg+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O HQKMJHAJHXVSDF-UHFFFAOYSA-L 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 6
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 claims description 4
- 229940105112 magnesium myristate Drugs 0.000 claims description 4
- DMRBHZWQMKSQGR-UHFFFAOYSA-L magnesium;tetradecanoate Chemical compound [Mg+2].CCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCC([O-])=O DMRBHZWQMKSQGR-UHFFFAOYSA-L 0.000 claims description 4
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 claims description 4
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- 235000019359 magnesium stearate Nutrition 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 238000005303 weighing Methods 0.000 claims description 3
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 claims description 2
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 claims description 2
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 2
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 claims description 2
- LDZYRENCLPUXAX-UHFFFAOYSA-N 2-methyl-1h-benzimidazole Chemical compound C1=CC=C2NC(C)=NC2=C1 LDZYRENCLPUXAX-UHFFFAOYSA-N 0.000 claims description 2
- SDXAWLJRERMRKF-UHFFFAOYSA-N 3,5-dimethyl-1h-pyrazole Chemical group CC=1C=C(C)NN=1 SDXAWLJRERMRKF-UHFFFAOYSA-N 0.000 claims description 2
- ZJLSMLDOCGOURY-UHFFFAOYSA-N 4-[[2-[[4-chloro-3-(trifluoromethyl)phenyl]amino]-3h-benzimidazol-5-yl]oxy]-n-methyl-pyridine-2-carboxamide Chemical compound C1=NC(C(=O)NC)=CC(OC=2C=C3NC(NC=4C=C(C(Cl)=CC=4)C(F)(F)F)=NC3=CC=2)=C1 ZJLSMLDOCGOURY-UHFFFAOYSA-N 0.000 claims description 2
- 229940120146 EDTMP Drugs 0.000 claims description 2
- KIDJHPQACZGFTI-UHFFFAOYSA-N [6-[bis(phosphonomethyl)amino]hexyl-(phosphonomethyl)amino]methylphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCCCCCN(CP(O)(O)=O)CP(O)(O)=O KIDJHPQACZGFTI-UHFFFAOYSA-N 0.000 claims description 2
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 2
- MRNZSTMRDWRNNR-UHFFFAOYSA-N bis(hexamethylene)triamine Chemical compound NCCCCCCNCCCCCCN MRNZSTMRDWRNNR-UHFFFAOYSA-N 0.000 claims description 2
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims description 2
- 229960001231 choline Drugs 0.000 claims description 2
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 claims description 2
- 229940063002 magnesium palmitate Drugs 0.000 claims description 2
- OEGPMRPDTVWZBR-IXKDQTEKSA-L magnesium;(5z,8z,11z,14z)-icosa-5,8,11,14-tetraenoate Chemical compound [Mg+2].CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC([O-])=O.CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC([O-])=O OEGPMRPDTVWZBR-IXKDQTEKSA-L 0.000 claims description 2
- OUCWKVJZEFNZQE-GRVYQHKQSA-L magnesium;(9z,12z)-octadeca-9,12-dienoate Chemical compound [Mg+2].CCCCC\C=C/C\C=C/CCCCCCCC([O-])=O.CCCCC\C=C/C\C=C/CCCCCCCC([O-])=O OUCWKVJZEFNZQE-GRVYQHKQSA-L 0.000 claims description 2
- CPNXUCKJQXUHKH-VKRZFSCASA-L magnesium;(z)-tetradec-9-enoate Chemical compound [Mg+2].CCCC\C=C/CCCCCCCC([O-])=O.CCCC\C=C/CCCCCCCC([O-])=O CPNXUCKJQXUHKH-VKRZFSCASA-L 0.000 claims description 2
- WPUHLWYDTKIMGG-UHFFFAOYSA-L magnesium;2-hydroxyoctadecanoate Chemical compound [Mg+2].CCCCCCCCCCCCCCCCC(O)C([O-])=O.CCCCCCCCCCCCCCCCC(O)C([O-])=O WPUHLWYDTKIMGG-UHFFFAOYSA-L 0.000 claims description 2
- OBQVOBQZMOXRAL-UHFFFAOYSA-L magnesium;docosanoate Chemical compound [Mg+2].CCCCCCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCCCCCC([O-])=O OBQVOBQZMOXRAL-UHFFFAOYSA-L 0.000 claims description 2
- BJZBHTNKDCBDNQ-UHFFFAOYSA-L magnesium;dodecanoate Chemical compound [Mg+2].CCCCCCCCCCCC([O-])=O.CCCCCCCCCCCC([O-])=O BJZBHTNKDCBDNQ-UHFFFAOYSA-L 0.000 claims description 2
- ABSWXCXMXIZDSN-UHFFFAOYSA-L magnesium;hexadecanoate Chemical compound [Mg+2].CCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCC([O-])=O ABSWXCXMXIZDSN-UHFFFAOYSA-L 0.000 claims description 2
- AXLHVTKGDPVANO-UHFFFAOYSA-N methyl 2-amino-3-[(2-methylpropan-2-yl)oxycarbonylamino]propanoate Chemical compound COC(=O)C(N)CNC(=O)OC(C)(C)C AXLHVTKGDPVANO-UHFFFAOYSA-N 0.000 claims description 2
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 2
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 2
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims 1
- 238000000354 decomposition reaction Methods 0.000 abstract description 18
- 229910021645 metal ion Inorganic materials 0.000 abstract description 18
- 239000013522 chelant Substances 0.000 abstract description 4
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 230000002195 synergetic effect Effects 0.000 abstract description 2
- 238000013329 compounding Methods 0.000 abstract 1
- 238000001179 sorption measurement Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 19
- 238000005530 etching Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
- 239000000347 magnesium hydroxide Substances 0.000 description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003922 charged colloid Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012669 liquid formulation Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- SECPZKHBENQXJG-FPLPWBNLSA-N palmitoleic acid Chemical compound CCCCCC\C=C/CCCCCCCC(O)=O SECPZKHBENQXJG-FPLPWBNLSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Abstract
The invention relates to a long-life chip cleaning solution which comprises the following components in parts by weight: 0.01-0.3 part of functional additive; passing through7-15 parts of hydrogen oxide; 0.01-0.1 part of organic acid; 0.1-1 part of quaternary ammonium base; 0.5-3 parts of corrosion inhibitor; 60-90 parts of ultrapure water; the invention also discloses a preparation method and application of the cleaning liquid. The functional additive is formed by compounding an adsorptive structure and a chelating structure, and the adsorptive structure and the chelating structure have synergistic effect. Adsorption structures by capturing HOO ‑ To stabilize the alkaline hydrogen peroxide solution and thereby interrupt the decomposition reaction. The chelating structure can directionally capture metal ions to chelate the metal ions so as to prevent the metal ions from accelerating the decomposition of hydrogen peroxide in the cleaning liquid. The functional additive provided by the invention can not only effectively clean residues, but also relieve self-decomposition of hydrogen peroxide under alkaline conditions and effectively chelate metal ions, so that the service life of the cleaning liquid is prolonged.
Description
Technical Field
The invention belongs to the field of semiconductor manufacturing processes, and particularly relates to a long-life chip cleaning solution, a preparation method and application thereof.
Background
As semiconductor technology nodes evolve to 32nm and smaller, this evolution impacts the application of traditional cleaning fluids.
Metal hard mask materials (such as TiN) are used to obtain better etch/removal selectivity, better pattern retention and profile control of the relatively low k material during the pattern etch process. For cleaning processes of post-etch residues or post-ash residues, the compatibility of the applied cleaning solution with the metal and the lifetime of the metal ions with the cleaning solution are both mutually affected. Therefore, developing a cleaning solution with high compatibility and long service life is a current urgent problem to be solved.
Hydrogen peroxide has a good etching effect on TiN, but the decomposition problem faced by the hydrogen peroxide shortens the service life of the corresponding cleaning liquid.
The hydrogen peroxide is decomposed mainly in two parts, one part is self-decomposition of hydrogen peroxide in alkaline environment, and the other part is the decomposition promotion of metal ions such as copper, titanium and the like in the cleaning liquid.
Under alkaline conditions, the decomposition mechanism is as follows:
H 2 O 2 +HOO - →O 2 ↑+OH - +H 2 O
therefore, in the reaction system, it is important to suppress the decomposition of hydrogen peroxide and to extend the lifetime of the cleaning liquid.
Disclosure of Invention
The invention solves the technical problems that: the cleaning solution has unsatisfactory cleaning effect on the etched residues and ashed residues, and has poor compatibility on interconnection materials, so that the decomposition of hydrogen peroxide cannot be effectively inhibited, and the service life of the cleaning solution is influenced.
In view of the technical problems in the prior art, the invention designs a long-life chip cleaning solution and a preparation method thereof.
In order to solve the technical problems, the invention adopts the following scheme:
it should be noted that, in the present invention, unless otherwise specified, reference to the specific meaning of "comprising" as defined and described by the composition includes both the open meaning of "comprising", "including" and the like, and the closed meaning of "consisting of …" and the like.
The long-life chip cleaning solution is characterized by comprising the following components in parts by weight:
0.01-0.3 part of functional additive;
7-15 parts of hydrogen peroxide;
0.01-0.1 part of organic acid;
0.1-1 part of quaternary ammonium base;
0.5-3 parts of corrosion inhibitor;
60-90 parts of ultrapure water;
wherein the functional additive is a substance with an adsorptive function structure and a chelating function structure;
the organic acid is organic phosphonic acid;
the corrosion inhibitor is an azole compound.
Further, the functional additive is a fatty acid magnesium salt.
Further, the fatty acid magnesium salt is one or more of magnesium laurate, magnesium myristate, magnesium myristoleate, magnesium palmitate, magnesium palmitoleate, magnesium stearate, magnesium oleate, magnesium linoleate, magnesium arachidonate, magnesium behenate, magnesium erucate, magnesium hydroxystearate and magnesium epoxystearate.
Further, the organic phosphonic acid is one or more of ethylenediamine tetramethylene phosphonic acid, amino trimethylene phosphonic acid, hexamethylenediamine tetramethylene phosphonic acid and dihexylenetriamine pentamethylene phosphonic acid.
Further, the quaternary ammonium base is one or more of tetramethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium hydroxide, benzyltrimethylammonium hydroxide, choline, (2-hydroxyethyl) trimethylammonium hydroxide and tris (2-hydroxyethyl) methylammonium hydroxide.
Further, the corrosion inhibitor is one or more of 2-mercaptobenzimidazole, 2-methylbenzimidazole, 2-aminobenzimidazole, 3, 5-dimethylpyrazole, 1,2, 3-triazole and 3-ammonia-1, 2, 4-triazole.
Further, the fatty acid magnesium salt is magnesium myristate;
the organic phosphonic acid is dihexyltriamine pentamethylene phosphonic acid;
the quaternary ammonium base is benzyl trimethyl ammonium hydroxide;
the corrosion inhibitor is 3, 5-dimethylpyrazole.
The invention also discloses a preparation method of the long-life chip cleaning liquid, which is characterized by comprising the following steps:
step 1: weighing each component with the respective dosage;
step 2: and adding quaternary ammonium hydroxide, a corrosion inhibitor, ultrapure water, a functional additive, organic acid and hydrogen peroxide into a container in sequence, and stirring until all materials are completely dissolved, thus obtaining the long-life chip cleaning liquid.
The invention also discloses a cleaning method of the long-life chip cleaning liquid, which is characterized by comprising the following steps:
step 1: taking 20-50mL of prepared long-life chip cleaning liquid, heating and soaking the chip in a water bath kettle at the heating temperature of 30-50 ℃ for 5-30min to obtain a cleaned chip;
step 2: and (5) washing the washed chip with ultrapure water for 1-5min to finish the washing process of the chip.
The invention also discloses application of the long-life chip cleaning liquid in chip cleaning.
In the invention, in order to achieve better cleaning effect, the components can be further optimized, and the functional additive is 0.01-0.1 part; 9-12 parts of hydrogen peroxide; 0.01-0.05 part of organic acid; 0.1-0.5 part of quaternary ammonium base; 0.5-1 part of corrosion inhibitor; 70-80 parts of ultrapure water.
In the present invention, the temperature at which the soaking in the water bath in step 1 of the washing method is performed may be further preferably 30 to 40 ℃ and the soaking time is further preferably 5 to 10 minutes. The rinsing time in step 2 is further preferably 2 to 3 minutes.
The long-life chip cleaning solution has the following beneficial effects：
(1) The functional additive has the synergistic effect of an adsorptive action structure and a chelating action structure, can effectively inhibit self-decomposition of hydrogen peroxide and accelerated decomposition of metal ions, and achieves the aim of prolonging the service life of the cleaning liquid.
The magnesium in the functional additive of the invention forms magnesium hydroxide to react with water under alkaline conditions to generate positively charged colloid which can capture HOO - The decomposition reaction is interrupted, so that the stability of the hydrogen peroxide in an alkaline solution is enhanced.
The carboxyl in the functional additive can directionally capture metal ions to form coordination, so that stable complex is generated, the activity of the metal ions is reduced, and the decomposition of hydrogen peroxide in the cleaning liquid is inhibited.
(2) The organic phosphonic acid used in the invention has double functions:
firstly, the pH of the solution can be regulated;
secondly, the phosphate radical and the carboxyl in the structure can effectively chelate metal ions so as to prevent the metal ions from accelerating the decomposition of hydrogen peroxide in the cleaning liquid and prolong the service life of the cleaning liquid.
(3) The invention has no special requirement on the chip corrosion-free cleaning process, ultrasonic treatment is not needed, the pollutants, various particles and the like adhered on the chip can be completely eluted only by the soaking process, and the chip is only washed by pure water in the follow-up process, so that no dirt residue is generated after water washing.
Drawings
Fig. 1: an SEM effect diagram of 22000 times of enlargement of the chip cleaned by the cleaning solution in embodiment 1 of the present invention;
fig. 2: an SEM effect image of the chip after cleaning with the cleaning liquid of comparative example 2 of the present invention was magnified 22000 times.
Detailed Description
The invention is further described with reference to specific examples and figures:
table 1 example
Table 2 comparative example
With respect to the preparation method of the long-life chip cleaning liquid of the invention,comprises the following steps:
step 1: weighing each component with the respective dosage;
step 2: and adding quaternary ammonium hydroxide, a corrosion inhibitor, ultrapure water, a functional additive, organic acid and hydrogen peroxide into a container in sequence, and stirring until all materials are completely dissolved, thus obtaining the long-life chip cleaning liquid.
With respect to the present inventionA cleaning method of long-life chip cleaning liquid,comprises the following steps:
step 1: taking 40mL of the prepared alkaline cleaning solution for cleaning the chip with long service life, and heating and soaking the chip in a water bath at 40 ℃ for 10min to obtain the cleaned chip;
step 2: and (5) washing the cleaned chip with ultrapure water for 2min to finish the cleaning process of the chip.
Regarding performance testing and description:
performance 1 etch rate test method
And heating the cleaning liquid in a water bath, adding a titanium nitride sheet with the length of 2 x 2cm into the cleaning liquid after the cleaning liquid reaches 40 ℃, starting timing, and calculating the actual titanium nitride etching rate by the known film thickness and the etching time after the titanium nitride etching is completely finished.
Table 3 test data
Analysis of test results shows that:
as can be seen from the test results of Table 3, the initial liquid etching rate in the long-life chip cleaning liquid of example 1 of the present invention was as follows from the etching rate of titanium nitride by the initial liquid formulation and the cleaning liquid left for 10 monthsThe etching rate of the cleaning solution after 10 months of standing is +.> The etching rate is only +>Is a drop in (c).
Example 1 cleaning solution has a long life because magnesium in the functional additive forms magnesium hydroxide under alkaline conditions, which can react with water to produce adsorbed HOO - Is a colloid of (a); in addition, the carboxyl in the functional additive can be effectively coordinated with metal ions to form a complex, so that the activity of the metal ions is further reduced, the decomposition effect of the metal ions on hydrogen peroxide is reduced, and the stability of the hydrogen peroxide is enhanced.
The initial liquid etching rate in the cleaning liquid in comparative example 1 wasThe etching rate of the cleaning solution after 10 months of standing is +.>There is->Is a drop in (c).
The etching rate in comparative example 1 is greatly lowered because the carboxyl group in the functional additive is absent and the metal ions cannot be directionally trapped to form coordination to generate a complex, so that the metal ions in comparative example 1 have high activity, and the decomposition of hydrogen peroxide is accelerated, thereby causing rapid lowering of the etching rate. The comparison of the data shows that the cleaning liquid has more stable etching rate and longer service life on titanium nitride.
Further comparing the description with the drawings：
Fig. 1 is an SEM effect diagram of 22000-magnification of a chip washed with the cleaning liquid according to embodiment 1 of the present invention.
Fig. 2 is an SEM effect diagram of 22000-magnification of the chip washed with the washing liquid of comparative example 2 of the present invention.
As can be seen from fig. 1 and fig. 2, the long-life chip cleaning solution prepared by the embodiment of the invention has no residue on the surface of the chip after cleaning, and has better cleaning effect.
The functional additive can not only effectively clean residues, but also relieve self-decomposition of hydrogen peroxide under alkaline conditions and effectively chelate metal ions, so that the accelerated decomposition of the metal ions to the hydrogen peroxide is reduced, and the service life of the cleaning liquid is prolonged.
While the present invention has been described above by way of example with reference to the embodiments and the accompanying drawings, it is apparent that the implementation of the present invention is not limited by the above manner, and it is within the scope of the present invention to apply the inventive concept and technical solution to other situations as long as various improvements are adopted by the inventive concept and technical solution, or without any improvement.
Claims (10)
1. The long-life chip cleaning solution is characterized by comprising the following components in parts by weight:
0.01-0.3 part of functional additive;
7-15 parts of hydrogen peroxide;
0.01-0.1 part of organic acid;
0.1-1 part of quaternary ammonium base;
0.5-3 parts of corrosion inhibitor;
60-90 parts of ultrapure water;
wherein the functional additive is a substance with an adsorptive function structure and a chelating function structure;
the organic acid is organic phosphonic acid;
the corrosion inhibitor is an azole compound.
2. The long life chip cleaning solution of claim 1, wherein:
the functional additive is fatty acid magnesium salt.
3. The long life chip cleaning solution of claim 2, wherein:
the fatty acid magnesium salt is one or more of magnesium laurate, magnesium myristate, magnesium myristoleate, magnesium palmitate, magnesium palmitat, magnesium stearate, magnesium oleate, magnesium linoleate, magnesium arachidonate, magnesium behenate, magnesium erucate, magnesium hydroxystearate and epoxy magnesium stearate.
4. The long life chip cleaning solution of claim 3, wherein:
the organic phosphonic acid is one or more of ethylenediamine tetramethylene phosphonic acid, amino trimethylene phosphonic acid, hexamethylenediamine tetramethylene phosphonic acid and dihexylenetriamine pentamethylene phosphonic acid.
5. The long life chip cleaning solution of claim 3, wherein:
the quaternary ammonium base is one or more of tetramethyl ammonium hydroxide, tetrapropyl ammonium hydroxide, tetrabutyl ammonium hydroxide, tetraethyl ammonium hydroxide, benzyl trimethyl ammonium hydroxide, choline, (2-hydroxyethyl) trimethyl ammonium hydroxide and tri (2-hydroxyethyl) methyl ammonium hydroxide.
6. The long life chip cleaning solution of claim 3, wherein:
the corrosion inhibitor is one or more of 2-mercaptobenzimidazole, 2-methylbenzimidazole, 2-aminobenzimidazole, 3, 5-dimethylpyrazole, 1,2, 3-triazole and 3-ammonia-1, 2, 4-triazole.
7. The long life chip cleaning solution of claim 6, wherein:
the fatty acid magnesium salt is magnesium myristate;
the organic phosphonic acid is dihexyltriamine pentamethylene phosphonic acid;
the quaternary ammonium base is benzyl trimethyl ammonium hydroxide;
the corrosion inhibitor is 3, 5-dimethylpyrazole.
8. A method for preparing the long life chip cleaning liquid of any one of claims 1-7, comprising the steps of:
step 1: weighing each component with the respective dosage;
step 2: and adding quaternary ammonium hydroxide, a corrosion inhibitor, ultrapure water, a functional additive, organic acid and hydrogen peroxide into a container in sequence, and stirring until all materials are completely dissolved, thus obtaining the long-life chip cleaning liquid.
9. A method for cleaning the long life chip cleaning liquid as claimed in any one of claims 1 to 7, comprising the steps of:
step 1: taking 20-50mL of prepared long-life chip cleaning liquid, heating and soaking the chip in a water bath kettle at the heating temperature of 30-50 ℃ for 5-30min to obtain a cleaned chip;
step 2: and (5) washing the washed chip with ultrapure water for 1-5min to finish the washing process of the chip.
10. Use of the long life chip cleaning solution of any of claims 1-7 in chip cleaning.
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| CN202311699528.8A CN117821181A (en) | 2023-12-12 | 2023-12-12 | Long-life chip cleaning solution and preparation method and application thereof |
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