CN117821153A - Cooling liquid for wire cutting of heterojunction N-type ultrathin half monocrystalline silicon wafer tungsten filament - Google Patents
Cooling liquid for wire cutting of heterojunction N-type ultrathin half monocrystalline silicon wafer tungsten filament Download PDFInfo
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- CN117821153A CN117821153A CN202311836782.8A CN202311836782A CN117821153A CN 117821153 A CN117821153 A CN 117821153A CN 202311836782 A CN202311836782 A CN 202311836782A CN 117821153 A CN117821153 A CN 117821153A
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- heterojunction
- monocrystalline silicon
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- 238000005520 cutting process Methods 0.000 title claims abstract description 32
- 239000000110 cooling liquid Substances 0.000 title claims abstract description 19
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 10
- 229910052721 tungsten Inorganic materials 0.000 title claims description 8
- 239000010937 tungsten Substances 0.000 title claims description 8
- 238000009736 wetting Methods 0.000 claims abstract description 23
- 239000002270 dispersing agent Substances 0.000 claims abstract description 22
- 239000000080 wetting agent Substances 0.000 claims abstract description 20
- 125000002091 cationic group Chemical group 0.000 claims abstract description 18
- 239000000314 lubricant Substances 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 230000007935 neutral effect Effects 0.000 claims abstract description 5
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 20
- 229920001223 polyethylene glycol Polymers 0.000 claims description 16
- 229920001451 polypropylene glycol Polymers 0.000 claims description 16
- 239000002202 Polyethylene glycol Substances 0.000 claims description 12
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 10
- 229920000570 polyether Polymers 0.000 claims description 10
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 9
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 9
- 239000006185 dispersion Substances 0.000 claims description 9
- 229920000909 polytetrahydrofuran Polymers 0.000 claims description 8
- 125000003158 alcohol group Chemical group 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- JXASPPWQHFOWPL-UHFFFAOYSA-N Tamarixin Natural products C1=C(O)C(OC)=CC=C1C1=C(OC2C(C(O)C(O)C(CO)O2)O)C(=O)C2=C(O)C=C(O)C=C2O1 JXASPPWQHFOWPL-UHFFFAOYSA-N 0.000 claims description 2
- 239000002826 coolant Substances 0.000 claims description 2
- -1 polytetramethylene Polymers 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 25
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- 239000010703 silicon Substances 0.000 abstract description 14
- 239000011863 silicon-based powder Substances 0.000 abstract description 11
- 238000001179 sorption measurement Methods 0.000 abstract description 6
- 230000003749 cleanliness Effects 0.000 abstract description 4
- 230000001954 sterilising effect Effects 0.000 abstract description 3
- 239000003093 cationic surfactant Substances 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000010248 power generation Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 20
- 229910003460 diamond Inorganic materials 0.000 description 11
- 239000010432 diamond Substances 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 8
- 239000002173 cutting fluid Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 229910000677 High-carbon steel Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Lubricants (AREA)
Abstract
The invention relates to a heterojunction N-type ultrathin half-piece monocrystalline silicon wafer tungsten wire cutting cooling liquid, belonging to the technical field of photovoltaic power generation equipment manufacturing. The formula is as follows: nonionic wetting agent + cationic wetting dispersant + dispersing lubricant + pH adjuster; the weight portion comprises the following components: 10-25 parts of nonionic wetting agent, 2-8 parts of cationic wetting dispersant, 10-30 parts of dispersing lubricant, a proper amount of pH regulator and the balance of pure water, wherein the sum of the components is 100 parts, and the neutral cooling liquid is prepared. The product is characterized in that a cationic surfactant with good sterilizing capability and strong adsorption capability is introduced as a wetting dispersant on the basis of a nonionic wetting agent dispersant, and silicon powder generated in the cutting process can be adsorbed due to the strong adsorption capability of the introduced product, so that the silicon powder is further taken away, and the cleanliness of the surface of the degummed silicon wafer is greatly improved.
Description
Technical Field
The invention relates to the technical field of manufacturing of photovoltaic power generation equipment, in particular to a cooling liquid for tungsten wire cutting of heterojunction N-type ultrathin half monocrystalline silicon wafers.
Background
Aiming at the line diameter thinning of diamond wires, the increase of the breakage rate caused by the increase and thinning of the silicon wafer size, and the like, the steel wire substrate is gradually changed into a high-carbon steel substrate in the diamond wire cutting field, which is called tungsten wire diamond wires in the industry, the tungsten steel wires have high strength and are more wear-resistant, the kerf is rapidly reduced in the cutting process, but the residual silicon powder on the surface of the silicon wafer is still increased in use, so that the effects on lifting rods, inserting sheets and cleaning of the silicon wafer are caused.
The traditional high-carbon steel diamond wire is easy to break due to chemical corrosion with ions if the ion content in a cutting fluid system is higher because of the temperature rise of the cutting front during the back and forth cutting due to the characteristics of bus materials. The wire diameter of the high-carbon diamond wire cut by the silicon wafer is gradually thinned after years of development, and the wire diameter is rapidly approaching to the physical limit. At this time, the tungsten wire diamond wire has a larger thinning space by virtue of the advantages of wear resistance, high strength, breakage rate and the like. In addition, the tungsten wire diamond wire has the characteristics of stable chemical performance, good corrosion resistance to ions and acid and alkali, and the like, and combines the risks of abnormal silicon wafer cleanliness, bar lifting, wire clamping and the like caused by thin wire flaking in the current industry. Cutting fluid with strong sterilization capability and adsorption capability is introduced to improve the problems and challenges encountered at present.
Disclosure of Invention
In order to avoid agglomeration of silicon powder in the cutting process, the traditional cutting fluid needs to be added with a surfactant which is beneficial to dispersion. The invention is characterized in that the wetting dispersion system of the cutting fluid is supplemented on the basis of the existing cutting fluid. The existing cutting fluid generally uses one to three low molecular weight nonionic surfactants as wetting agents, macromolecular block polyether as a dispersing lubricant, and a small amount of molecular defoamer is used in an auxiliary way. The action mechanism in cutting is that the wetting agent is attached to the surface of the silicon powder after the silicon powder is cut, and then the block polyether provides a steric hindrance effect to prevent the silicon powder from agglomerating together.
The invention provides a heterojunction N-type ultrathin semi-sheet monocrystalline silicon wafer tungsten wire cutting cooling liquid, which is characterized in that a cationic surfactant with good sterilization capability and strong adsorption capability is introduced as a wetting dispersant on the basis of a nonionic wetting agent dispersant, silicon powder generated in the cutting process can be adsorbed due to the strong adsorption capability of the introduced product, the silicon powder is further taken away, the cleanliness of the surface of a degummed silicon wafer is greatly improved, the cooling liquid has stronger dispersion capability and wetting capability for cutting a large-size ultrathin silicon wafer, the abnormality of the cutting process is effectively improved, and the defective proportion of a finished product is reduced.
In order to achieve the above purpose, the invention adopts the following technical scheme: a heterojunction N-type ultrathin half monocrystalline silicon piece tungsten filament wire cutting coolant comprises the following components in percentage by weight: nonionic wetting agent + cationic wetting dispersant + dispersing lubricant + pH adjuster;
the weight portion comprises the following components: 10-25 parts of nonionic wetting agent, 2-8 parts of cationic wetting dispersant, 10-30 parts of dispersing lubricant, a proper amount of pH regulator and the balance of pure water, wherein the sum of the components is 100 parts, and the neutral cooling liquid is prepared.
Preferably, the nonionic wetting agent has the structure: r1x-R2y-R3z.
Wherein R1 is an isomeric alcohol structure of 8-16 carbons; r2 is polyethylene glycol (CH 2CH 2O-) or polypropylene glycol (CH 2 (CH 3) CH 2O-); r3 is polypropylene glycol (CH 2 (CH 3) CH 2O-) or polyethylene glycol (CH 2CH 2O-) or polytetramethylene glycol (CH 2CH2CH2CH 2O-).
Preferably, the cationic wetting dispersant has the following structure:
wherein R1 is an isomeric alcohol structure of 10-14 carbons; r2 and R3 are (-CH 3) or (-CH 2CH 3)
Or (-CH 2 (C6H 5)) or (-CH 2CH2 OH); r4 is (- (CH 2CH 2O) n-H) wherein n is 1,2,3, etc.;
or:
wherein R1 and R2 are alkyl groups and Y isOr (-C6H 4-) or (-CH 2 (C6H 4) CH 2-);
the cationic wetting dispersant is one of the above.
Preferably, the dispersion lubricant is a block polyether comprising:
1) R1x-R2y, R1 is one of polyethylene glycol (CH 2CH 2O-) or polypropylene glycol (CH 2 (CH 3) CH 2O-) or polytetrahydrofuran glycol (CH 2CH2CH2CH 2O-) and R2 is one of polyethylene glycol (CH 2CH 2O-) or polypropylene glycol (CH 2 (CH 3) CH 2O-) or polytetrahydrofuran glycol (CH 2CH2CH 2O-);
2) Glycerol block polyether: the concrete structure is that
R 1 Is one of polyethylene glycol (CH 2CH 2O-) or polypropylene glycol (CH 2 (CH 3) CH 2O-) or polytetrahydrofuran glycol (CH 2CH2CH2CH 2O-), R 2 Is one of polyethylene glycol (CH 2CH 2O-) or polypropylene glycol (CH 2 (CH 3) CH 2O-) or polytetrahydrofuran glycol (CH 2CH2CH2CH 2O-).
The invention has the beneficial effects that: the product of the invention has strong adsorption capacity, can adsorb silicon powder generated in the cutting process, further takes away the silicon powder, greatly improves the cleanliness of the surface of the degummed silicon wafer, has stronger dispersion capacity and wetting capacity for cutting the large-size ultrathin silicon wafer, effectively improves the reduction of abnormal cutting process and reduces the defective proportion of finished products.
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments, and all other embodiments obtained by those skilled in the art without making any inventive effort based on the embodiments of the present invention are within the scope of protection of the present invention.
Example 1
10 parts of nonionic wetting agent, 5 parts of cationic wetting dispersant, 20 parts of dispersing lubricant, a proper amount of pH regulator and the balance of pure water are used, and the total of the components is 100 parts, so that neutral cooling liquid is prepared, wherein:
the nonionic wetting agent was an isomeric 9 carbon alcohol with 6 polyethylene glycols followed by 6 polypropylene glycols.
Cationic wetting dispersant is
Wherein R is 1 Is 10 carbon alcohol; r is R 2 Is (-CH 3), R 3 Is (-CH 2CH 3); r is R 4 Is (-CH 2CH2 OH).
Commercially available L6400 block polyethers were used as dispersing lubricants.
The tungsten wire diamond wire 30 micron wire was used to cut 182 x 91 and 210 x 105 size, 120 μm and 110 μm and 98 μm wafers. The cutting process is normal, no broken line exists, and the cutting is added, and the silicon wafer is polluted.
Example 2
15 parts of nonionic wetting agent, 3 parts of cationic wetting dispersant, 20 parts of dispersing lubricant, a proper amount of pH regulator and the balance of pure water are used, and the total of the components is 100 parts, so that neutral cooling liquid is prepared, wherein:
the nonionic wetting agent was an isomeric 14-carbon acetylenic diol alcohol with 6 polyethylene glycols followed by 6 polypropylene glycols.
Cationic wetting dispersant is
Wherein R is 1 、R 2 Is alkyl, Y isR 1 、R 2 Is a 12 carbon alkyl group, and n is 4.
As the dispersion lubricant, a commercially available 1740-block polyether was used.
Tungsten wire diamond wire 28 micron wire was used to cut 182 x 91 and 210 x 105 size, 120 μm and 110 μm and 98 μm wafers. The cutting process is normal, no broken line exists, and the cutting is added, and the silicon wafer is polluted.
Example 3
The weakly acidic cooling liquid is prepared by using 20 parts of nonionic wetting agent, 3 parts of cationic wetting dispersant, 25 parts of dispersing lubricant, a proper amount of pH regulator and the balance of pure water, wherein the sum of the components is 100 parts, and the weakly acidic cooling liquid comprises the following components:
the nonionic wetting agent was an isomeric 8 carbon alcohol with 6 polyethylene glycols followed by 6 polypropylene glycols.
Cationic wetting dispersant is
Wherein R is 1 Is 14 carbon alcohol; r is R 2 Is (-CH 2CH 3); r is R 3 (-CH 2 (C6H 5)); r is R 4 For (- (CH 2CH 2O) 3 -H)。
As the dispersion lubricant, a commercially available glycerol polyether was used.
The tungsten wire diamond wire 26 micron wire was used to cut 182 x 91 and 210 x 105 size, 120 μm and 110 μm and 98 μm wafers. The cutting process is normal, no broken line exists, and the cutting is added, and the silicon wafer is polluted.
Example 4
15 parts of nonionic wetting agent, 5 parts of cationic wetting dispersant, 20 parts of dispersing lubricant, a proper amount of pH regulator and the balance of pure water are used, and the sum of the components is 100 parts, so that a weak acid cooling liquid is prepared, wherein:
the nonionic wetting agent uses isomeric 16-carbyne diols with 5 polyethylene glycols followed by 5 polypropylene glycols.
Cationic wetting dispersant is
Wherein R is 1 、R 2 Is alkyl, Y is (-CH 2 (C6H 4) CH 2-), R 1 、R 2 Is a 12-carbon alkyl group, Y is (-C6H 4-).
The dispersion lubricant used was a commercially available L6400 block polyether.
Tungsten wire diamond wire 25 micron wire was used to cut 182 x 91 and 210 x 105 size, 120 μm and 110 μm and 98 μm wafers. The cutting process is normal, no broken line exists, and the cutting is added, and the silicon wafer is polluted.
The cooling fluid in the above example was compared with the existing commercially available cooling fluid in ultra-thin half-sheet cutting, and the comparison data are shown in table 1:
TABLE 1
| Cooling liquid | Dispersibility of | Wettability of | Lubricity of the bearing | A+ yield |
| Example 1 | In general | Good (good) | Preferably, it is | 94.17 |
| Example 2 | Good (good) | Preferably, it is | Good (good) | 94.42 |
| Example 3 | In general | Good (good) | Good (good) | 94.62 |
| Example 4 | Good (good) | Good (good) | Good (good) | 95.46 |
| Commercially available cooling liquid | Good (good) | Preferably, it is | Good (good) | 93.88 |
Although the present invention has been described with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described, or equivalents may be substituted for elements thereof, and any modifications, equivalents, improvements and changes may be made without departing from the spirit and principles of the present invention.
Claims (4)
1. A heterojunction N-type ultrathin half monocrystalline silicon piece tungsten filament wire cutting coolant comprises the following components in percentage by weight: nonionic wetting agent + cationic wetting dispersant + dispersing lubricant + pH adjuster; the weight portion comprises the following components: 10-25 parts of nonionic wetting agent, 2-8 parts of cationic wetting dispersant, 10-30 parts of dispersing lubricant, a proper amount of pH regulator and the balance of pure water, wherein the sum of the components is 100 parts, and the neutral cooling liquid is prepared.
2. The heterojunction N-type ultrathin half-piece monocrystalline silicon piece tungsten filament wire-electrode cutting cooling liquid according to claim 1, which is characterized in that: the nonionic wetting agent has the structure that: r1x-R2y-R3z;
wherein R1 is an isomeric alcohol structure of 8-16 carbons; r2 is polyethylene glycol (CH 2CH 2O-) or polypropylene glycol (CH 2 (CH 3) CH 2O-); r3 is polypropylene glycol (CH 2 (CH 3) CH 2O-) or polyethylene glycol (CH 2CH 2O-) or polytetramethylene glycol (CH 2CH2CH2CH 2O-).
3. The heterojunction N-type ultrathin half-piece monocrystalline silicon piece tungsten filament wire-electrode cutting cooling liquid according to claim 1, which is characterized in that: the cationic wetting dispersant has the following structure:
wherein R is 1 An isomeric alcohol structure of 10-14 carbons; r is R 2 、R 3 Is one of (-CH 3) or (-CH 2 (C6H 5)) or (-CH 2CH2 OH); r is R 4 For (- (CH 2CH 2O) n -H), wherein n is 1,2,3, etc.;
or:
wherein R1 and R2 are alkyl groups and Y isOr (-C6H 4-) or (-CH 2 (C6H 4) CH 2-);
the cationic wetting dispersant is one of the above.
4. The heterojunction N-type ultrathin half-piece monocrystalline silicon piece tungsten filament wire-electrode cutting cooling liquid according to claim 1, which is characterized in that: the dispersion lubricant is a block polyether comprising:
1) R1x-R2y, R1 is one of polyethylene glycol (CH 2CH 2O-) or polypropylene glycol (CH 2 (CH 3) CH 2O-) or polytetrahydrofuran glycol (CH 2CH2CH2CH 2O-) and R2 is one of polyethylene glycol (CH 2CH 2O-) or polypropylene glycol (CH 2 (CH 3) CH 2O-) or polytetrahydrofuran glycol (CH 2CH2CH 2O-);
2) Glycerol block polyether: the concrete structure is that
R 1 Is one of polyethylene glycol (CH 2CH 2O-) or polypropylene glycol (CH 2 (CH 3) CH 2O-) or polytetrahydrofuran glycol (CH 2CH2CH2CH 2O-), R 2 Is one of polyethylene glycol (CH 2CH 2O-) or polypropylene glycol (CH 2 (CH 3) CH 2O-) or polytetrahydrofuran glycol (CH 2CH2CH2CH 2O-).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311836782.8A CN117821153A (en) | 2023-12-28 | 2023-12-28 | Cooling liquid for wire cutting of heterojunction N-type ultrathin half monocrystalline silicon wafer tungsten filament |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311836782.8A CN117821153A (en) | 2023-12-28 | 2023-12-28 | Cooling liquid for wire cutting of heterojunction N-type ultrathin half monocrystalline silicon wafer tungsten filament |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117821153A true CN117821153A (en) | 2024-04-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311836782.8A Pending CN117821153A (en) | 2023-12-28 | 2023-12-28 | Cooling liquid for wire cutting of heterojunction N-type ultrathin half monocrystalline silicon wafer tungsten filament |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117821153A (en) |
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2023
- 2023-12-28 CN CN202311836782.8A patent/CN117821153A/en active Pending
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