CN117810328A - Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode - Google Patents
Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode Download PDFInfo
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Abstract
The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode, and relates to the field of semiconductor photoelectric devices. The light-emitting diode epitaxial wafer comprises a silicon substrate, and a composite buffer layer, an intrinsic GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer which are sequentially arranged on the silicon substrate, wherein the composite buffer layer comprises a Y layer which is sequentially laminated 2 O 3 Layer, sc 2 O 3 Layers and a ScN layer. By implementing the invention, the luminous efficiency of the light-emitting diode can be improved.
Description
Technical Field
The invention relates to the field of semiconductor photoelectric devices, in particular to a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode.
Background
Blue-green LEDs of GaN-based semiconductor materials have been widely used such as white light illumination, full-color display, traffic lights, etc.; gaN-based LDs are key components of current DVD high-definition players and enable development of optical computers, laser television display screens and the like; the performance of the GaN-based deep ultraviolet and photoelectric detector is continuously improved, and the GaN-based deep ultraviolet and photoelectric detector can be widely applied to the fields of detection of biochemical weapons, early missile early warning, purification of air or water, high-quality white light illumination and the like in the near future.
Heteroepitaxy of GaN on Si substrates is much more difficult than on 6H-SiC or sapphire substrates, mainly because GaN has a mainly crystalline structure of (2H) wurtzite, while silicon has a diamond cubic structure, and the silicon substrate is easily passivated by nitrogen atoms cleaved by ammonia gas to form amorphous SiN x The layer is such that GaN is hardly nucleated on the silicon substrate. Meanwhile, the silicon substrate can react with Ga atoms quickly to form Si-Ga alloy, so that large flower defects can be formed on the surface of the epitaxial layer.
Heteroepitaxy of GaN on Si substrates typically employs AlN buffer layer technology. First, the large lattice mismatch of the AlN layer and the silicon substrate still generates a large amount of dislocations, and the GaN epitaxial layer is also subjected to a large tensile stress; second, the Si substrate reacts with the active N during epitaxial growth to generate SiN x The interface layer seriously reduces the quality of epitaxial materials of the GaN-based LED, and influences the luminous efficiency.
Disclosure of Invention
The invention aims to solve the technical problem of providing a light-emitting diode epitaxial wafer and a preparation method thereof, which can improve the luminous efficiency of a light-emitting diode.
The invention also solves the technical problem of providing a light-emitting diode with high luminous efficiency.
In order to solve the problems, the invention discloses a light-emitting diode epitaxial wafer, which comprises a silicon substrate, and a composite buffer layer, an intrinsic GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer which are sequentially arranged on the silicon substrate, wherein the composite buffer layer comprises Y which are sequentially laminated 2 O 3 Layer, sc 2 O 3 Layers and a ScN layer.
As the technical prescriptionImprovement of the scheme, the Y 2 O 3 The thickness of the layer is less than 20nm.
As an improvement of the technical scheme, the Y 2 O 3 The thickness of the layer is 1 nm-10 nm, the Sc 2 O 3 The thickness of the layer is 10 nm-100 nm, and the thickness of the ScN layer is 10 nm-100 nm.
As an improvement of the technical scheme, the composite buffer layer further comprises a two-dimensional GaN layer, wherein the two-dimensional GaN layer is arranged between the ScN layer and the intrinsic GaN layer, and the thickness of the two-dimensional GaN layer is 10 nm-100 nm.
As an improvement of the above technical scheme, the Sc 2 O 3 The thickness of the layer < the thickness of the ScN layer < the thickness of the two-dimensional GaN layer.
Correspondingly, the invention also discloses a preparation method of the light-emitting diode epitaxial wafer, which is used for preparing the light-emitting diode epitaxial wafer and comprises the following steps:
providing a silicon substrate, sequentially growing a composite buffer layer, an intrinsic GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer on the silicon substrate, wherein the composite buffer layer comprises sequentially laminated Y layers 2 O 3 Layer, sc 2 O 3 Layers and a ScN layer.
As an improvement of the technical scheme, the Y 2 O 3 The layer is grown by molecular beam epitaxy, the substrate temperature is 600-700 ℃, and the cavity pressure is 10% -7 mbar～10 -5 mbar；
The Sc is 2 O 3 The layer is grown by molecular beam epitaxy, the temperature of the substrate is 450-550 ℃, and the pressure of the cavity is 10% - 7 mbar～10 -5 mbar；
The ScN layer is epitaxially grown by a plasma molecular beam, the substrate temperature is 300-800 ℃, and the cavity pressure is 10 -8 mbar～10 -7 The power of the plasma generator is 250W-350W.
As an improvement of the above technical solution, the composite buffer layer further includes a two-dimensional GaN layer, and the two-dimensional GaN layer is disposed between the ScN layer and the intrinsic GaN layer.
As an improvement of the technical scheme, the two-dimensional GaN layer is grown by molecular beam epitaxy, the substrate temperature is 600-800 ℃, and the cavity pressure is 10 -6 mbar～10 -4 mbar。
Correspondingly, the invention also discloses a light-emitting diode, which comprises the light-emitting diode epitaxial wafer.
The implementation of the invention has the following beneficial effects:
1. in the light-emitting diode epitaxial wafer, the composite buffer layer comprises Y which are sequentially laminated 2 O 3 Layer, sc 2 O 3 Layers and a ScN layer. First, Y is introduced into the composite buffer layer 2 O 3 The layer has larger energy band bias with the Si substrate and good thermal stability, can prevent the Ga reflow phenomenon of the Si substrate, improves the surface flatness and improves the luminous efficiency of the LED; next, at Y 2 O 3 Growth of Sc on layers in sequence 2 O 3 Layer and ScN layer, Y 2 O 3 Layer, sc 2 O 3 The lattice constants of the layer and the ScN layer are gradually reduced, so that the lattice mismatch between the composite buffer layer and the GaN material can be gradually reduced, the lattice quality is improved, and the luminous efficiency of the LED is improved.
2.In the light-emitting diode epitaxial wafer, the composite buffer layer further comprises the two-dimensional GaN layer, the two-dimensional GaN layer is arranged on the ScN layer, the two-dimensional GaN layer provides a flat nucleation surface for three-dimensional growth of the intrinsic GaN layer, the crystal quality of the epitaxial wafer is further improved, and the light-emitting efficiency of the LED is improved.
Drawings
Fig. 1 is a schematic structural diagram of an led epitaxial wafer according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a composite buffer layer according to an embodiment of the invention;
FIG. 3 is a schematic diagram of a composite buffer layer according to another embodiment of the present invention;
fig. 4 is a flowchart of a method for manufacturing an led epitaxial wafer according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail below in order to make the objects, technical solutions and advantages of the present invention more apparent.
Referring to fig. 1 to 2, the invention discloses a light emitting diode epitaxial wafer, which comprises a silicon substrate 1, and a composite buffer layer 2, an intrinsic GaN layer 3, an N-type GaN layer 4, a multiple quantum well layer 5, an electron blocking layer 6 and a P-type GaN layer 7 which are sequentially arranged on the silicon substrate 1.
Wherein the composite buffer layer 2 comprises Y laminated in sequence 2 O 3 Layer 21, sc 2 O 3 Layer 22 and ScN layer 23. First, Y is introduced into the composite buffer layer 2 2 O 3 The layer 21 has larger energy band bias with the Si substrate and good thermal stability, can prevent the Ga reflow phenomenon of the silicon substrate 1, improves the surface flatness and improves the luminous efficiency of the LED; next, at Y 2 O 3 Growth of Sc on layer 21 in sequence 2 O 3 Layer 22 and ScN layer 23, Y 2 O 3 Layer 21, sc 2 O 3 The lattice constants of the layer 22 and the ScN layer 23 are gradually reduced, so that the lattice mismatch between the composite buffer layer 2 and the GaN material can be gradually reduced, the lattice quality is improved, and the luminous efficiency of the LED is improved.
Wherein Y is 2 O 3 Layer 21 has a thickness < 25nm. Y is Y 2 O 3 The layer 21 is thinner to avoid excessive defects due to lattice mismatch with the silicon substrate 1. Preferably, Y 2 O 3 The thickness of layer 21 is < 20nm. Further preferably, Y 2 O 3 The thickness of the layer 21 is 1nm to 10nm, and is exemplified by 2nm, 4nm, 6nm, or 8nm, but not limited thereto.
Wherein Sc is 2 O 3 The thickness of the layer 22 is 10 nm-120 nm, and if the thickness is less than 10nm, the effect of reducing the lattice mismatch between the composite buffer layer 2 and the GaN material is difficult to achieve; if the thickness is more than 120nm, cracks are likely to occur. Preferably Sc 2 O 3 The thickness of layer 22 is 10nm to 100nm, and is exemplified by, but not limited to, 20nm, 40nm, 60nm, or 80 nm.
Wherein, the thickness of the ScN layer 23 is 10 nm-120 nm, and if the thickness is less than 10nm, the ScN layer is difficult to play a role in reducing the lattice mismatch between the composite buffer layer 2 and the GaN material; if the thickness is more than 120nm, cracks are likely to occur. Preferably, the thickness of the ScN layer 23 is 10nm to 100nm, and exemplary is 20nm, 40nm, 60nm or 80nm, but is not limited thereto.
Preferably, in one embodiment of the present invention, referring to fig. 3, the composite buffer layer 2 further includes a two-dimensional GaN layer 24, and the two-dimensional GaN layer 24 is disposed between the ScN layer 23 and the intrinsic GaN layer 3. The two-dimensional GaN layer 24 provides a flat nucleation surface for three-dimensional growth of the intrinsic GaN layer 3, so that the crystal quality of the epitaxial wafer is further improved, and the luminous efficiency of the LED is improved.
Wherein the thickness of the two-dimensional GaN layer 24 is 10nm to 100nm. If the thickness is less than 10nm, it is difficult to provide a flat surface; if the thickness is more than 100nm, cracks are liable to occur. The thickness of the two-dimensional GaN layer 24 is, but not limited to, 20nm, 40nm, 60nm, or 80nm, for example.
Preferably, in one embodiment of the invention, sc 2 O 3 The thickness of layer 22 < the thickness of ScN layer 23 < the thickness of two-dimensional GaN layer 24. Based on this arrangement, the lattice matching between the composite buffer layer 2 and the intrinsic GaN layer 3 can be improved.
Among them, the intrinsic GaN layer 3 has a thickness of 1 μm to 5 μm, and exemplary is 1.5 μm, 3 μm, 4 μm, or 4.5 μm, but is not limited thereto.
The doping element of the N-type GaN layer 4 is Si, but is not limited thereto. The doping concentration of the N-type GaN layer 4 was 1×10 19 cm -3 ～5×10 19 cm -3 . The thickness of the N-type GaN layer 4 is 2 μm to 3 μm, and exemplary is 2.2 μm, 2.4 μm, 2.6 μm or 2.8 μm, but is not limited thereto.
The multiple quantum well layer 5 is an InGaN quantum well layer and an AlGaN quantum barrier layer which are alternately stacked, and the cycle number is 6-12. The ratio of In components In the InGaN quantum well layer is 0.2-0.3, the thickness of a single InGaN quantum well layer is 2-5 nm, the ratio of Al components In the AlGaN quantum barrier layer is 0.01-0.1, and the thickness of a single AlGaN quantum barrier layer is 5-15 nm.
The electron blocking layer 6 is an AlInGaN layer, but is not limited thereto. The electron blocking layer 6 has a thickness of 10nm to 40nm, an Al component of 0.005 to 0.1 and an in component of 0.01 to 0.2.
The doping element of the P-type GaN layer 7 is Mg, but is not limited thereto. In the P-type GaN layer 7The doping concentration of Mg is 1 multiplied by 10 19 cm -3 ～1×10 21 cm -3 . The thickness of the P-type GaN layer 7 is 10nm to 50nm.
Correspondingly, referring to fig. 4, the invention also discloses a preparation method of the light-emitting diode epitaxial wafer, which is used for preparing the light-emitting diode epitaxial wafer and comprises the following steps:
s101: providing a silicon substrate;
s102: growing a composite buffer layer on a silicon substrate;
specifically, in one embodiment of the present invention, S102 includes:
(I) Growth of Y on silicon substrate 2 O 3 A layer;
specifically, the Y can be grown by magnetron sputtering (PVD), molecular Beam Epitaxy (MBE), metal Organic Chemical Vapor Deposition (MOCVD), etc 2 O 3 A layer. Preferably, the substrate temperature is 600-700 ℃ and the cavity pressure is 10 by molecular beam epitaxy -7 mbar～10 -5 mbar。
(II) at Y 2 O 3 Growth of Sc on layer 2 O 3 A layer;
specifically, sc can be grown by magnetron sputtering (PVD), molecular Beam Epitaxy (MBE), metal Organic Chemical Vapor Deposition (MOCVD), etc 2 O 3 A layer. Preferably, the substrate temperature is 450-550 ℃ and the cavity pressure is 10 by molecular beam epitaxy -7 mbar～10 -5 mbar。
(III) at Sc 2 O 3 Growing a ScN layer on the layer;
specifically, the ScN layer may be grown by magnetron sputtering (PVD), plasma molecular beam epitaxy (PA-MBE), metal Organic Chemical Vapor Deposition (MOCVD), or the like. Preferably, the substrate temperature is 300-800 ℃ and the cavity pressure is 10 by plasma molecular beam epitaxy -8 mbar～10 -7 The power of the plasma generator is 250W-350W.
(iv) growing a two-dimensional GaN layer on the ScN layer;
in particular, magnetron sputtering (PVD), molecular beam epitaxy (MB)E) And growing a two-dimensional GaN layer by a Metal Organic Chemical Vapor Deposition (MOCVD) method and the like. Preferably, the substrate temperature is 600-800 ℃ and the cavity pressure is 10 by molecular beam epitaxy -6 mbar～10 -4 mbar。
S103: growing an intrinsic GaN layer on the composite buffer layer;
specifically, the intrinsic GaN layer is grown in MOCVD at 1050-1200 deg.c and 100-600 torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As an N source; by H 2 And N 2 As a carrier gas, TMGa was introduced as a Ga source.
S104: growing an N-type GaN layer on the intrinsic GaN layer;
specifically, an N-type GaN layer is grown in MOCVD at 1050-1200 deg.C and at 100-600 torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, siH is introduced 4 As an N-type doping source; by H 2 And N 2 As a carrier gas, TMGa was introduced as a Ga source.
S105: growing a multi-quantum well layer on the N-type GaN layer;
specifically, an InGaN quantum well layer and an AlGaN quantum barrier layer are periodically grown in MOCVD to form a multi-quantum well layer. Wherein the growth temperature of InGaN quantum well layer is 790-810 ℃, the growth pressure is 50-300 torr, and NH is introduced into MOCVD reaction chamber during growth 3 As N source, with N 2 As a carrier gas, TEGa was introduced as a Ga source, and TMIn was introduced as an In source. Wherein the growth temperature of the AlGaN quantum barrier layer is 800-900 ℃, the growth pressure is 50-300 torr, and NH is introduced into the MOCVD reaction chamber during growth 3 As N source, with H 2 And N 2 TMAl was introduced as an Al source and TEGa was introduced as a Ga source as a carrier gas.
S106: growing an electron blocking layer on the multiple quantum well layer;
specifically, an AlInGaN layer is grown in MOCVD as an electron blocking layer. Wherein the growth temperature is 900-1000 ℃, and the growth pressure is 100-300 torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, with N 2 TMAl was introduced as an Al source, TMGa was introduced as a Ga source, and TMIn was introduced as an In source as a carrier gas.
S107: growing a P-type GaN layer on the electron blocking layer;
specifically, a P-type GaN layer is grown in MOCVD at 900-1050 ℃ and at 100-600 torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, let in CP 2 Mg is used as a P-type doping source; by H 2 And N 2 As a carrier gas, TMGa was introduced as a Ga source.
The invention is further illustrated by the following examples:
example 1
The embodiment provides a light emitting diode epitaxial wafer, referring to fig. 1-2 and 4, which comprises a silicon substrate 1, and a composite buffer layer 2, an intrinsic GaN layer 3, an N-type GaN layer 4, a multiple quantum well layer 5, an electron blocking layer 6 and a P-type GaN layer 7 which are sequentially arranged on the silicon substrate 1.
Wherein the composite buffer layer 2 comprises Y laminated in sequence 2 O 3 Layer 21, sc 2 O 3 Layer 22 and ScN layer 23. Wherein Y is 2 O 3 The thickness of the layer 21 is 23nm, sc 2 O 3 The thickness of layer 22 was 120nm and the thickness of scn layer 23 was 120nm.
Wherein the thickness of the intrinsic GaN layer 3 is 2.5 μm. The thickness of the N-type GaN layer 4 was 2.5 μm, the doping element was Si, and the doping concentration of Si was 2.5X10 19 cm -3 。
The multiple quantum well layer 5 is of a periodic structure, the period number is 10, each period is an InGaN quantum well layer and an AlGaN quantum barrier layer which are sequentially stacked, the proportion of an In component In the InGaN quantum well layer is 0.22, the thickness of a single InGaN quantum well layer is 3.5nm, the proportion of an Al component In the AlGaN quantum barrier layer is 0.05, and the thickness of the single AlGaN quantum barrier layer is 10nm.
The electron blocking layer 6 is an AlInGaN layer, the thickness of the electron blocking layer 6 is 15nm, the Al component is 0.05, and the in component is 0.01. The doping element of the P-type GaN layer 7 is Mg, and the doping concentration is 2 multiplied by 10 20 cm -3 The thickness of the P-type GaN layer 7 was 15nm.
The preparation method for the light-emitting diode epitaxial wafer in the embodiment comprises the following steps:
(1) Providing a silicon substrate;
(2) Growing a composite buffer layer on a silicon substrate;
wherein the growth of the composite buffer layer comprises the following steps:
(I) Growth of Y on silicon substrate 2 O 3 A layer;
specifically, Y is grown by molecular beam epitaxy 2 O 3 Layer, substrate temperature 650 ℃ and chamber pressure 10% -6 mbar。
(II) at Y 2 O 3 Growth of Sc on layer 2 O 3 A layer;
specifically, sc is grown by molecular beam epitaxy 2 O 3 A layer, a substrate temperature of 500 ℃ and a cavity pressure of 10 -6 mbar。
(III) at Sc 2 O 3 Growing a ScN layer on the layer;
specifically, the ScN layer was grown by plasma molecular beam epitaxy at a substrate temperature of 700 ℃ and a chamber pressure of 10 - 8 The power of the plasma generator is 300W.
(3) Growing an intrinsic GaN layer on the composite buffer layer;
wherein, the intrinsic GaN layer is grown in MOCVD, the growth temperature is 1000 ℃, and the growth pressure is 150torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source.
(4) Growing an N-type GaN layer on the intrinsic GaN layer;
wherein, the N-type GaN layer is grown in MOCVD, the growth temperature is 1120 ℃, and the growth pressure is 100torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As carrier gas, TMGa is introduced as Ga source, siH is introduced 4 As an N-type dopant source.
(5) Growing a multi-quantum well layer on the N-type GaN layer;
wherein InGaN quanta are grown periodically in MOCVDThe well layer and the AlGaN quantum barrier layer to form a multiple quantum well layer. Wherein the growth temperature of the InGaN quantum well layer is 795 ℃, the growth pressure is 1200torr, and NH is introduced into the MOCVD reaction chamber during growth 3 As N source, with N 2 As a carrier gas, TEGa was introduced as a Ga source, and TMIn was introduced as an In source. Wherein, the growth temperature of AlGaN quantum barrier layer is 855 ℃, the growth pressure is 200torr, and NH is introduced into MOCVD reaction chamber during growth 3 As N source, with H 2 And N 2 TMAl was introduced as an Al source and TEGa was introduced as a Ga source as a carrier gas.
(6) Growing an electron blocking layer on the multiple quantum well layer;
wherein, alInGaN layer is grown in MOCVD as electron blocking layer, the growth temperature is 965 ℃, and the growth pressure is 200torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, with N 2 TMAl was introduced as an Al source, TMGa was introduced as a Ga source, and TMIn was introduced as an In source as a carrier gas.
(7) Growing a P-type GaN layer on the electron blocking layer;
wherein, the P-type GaN layer is grown in MOCVD, the growth temperature is 985 ℃, and the growth pressure is 200torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, let in CP 2 Mg is used as a P-type doping source; by H 2 And N 2 As a carrier gas, TMGa was introduced as a Ga source.
Example 2
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 1 in that Y 2 O 3 The thickness of the layer 21 is 15nm, sc 2 O 3 The thickness of layer 22 was 30nm, the thickness of scn layer 23 was 30nm, and the rest was the same as in example 1.
Example 3
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 2 in that Y 2 O 3 The thickness of layer 21 is 5nm. The remainder was the same as in example 2.
Example 4
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 3 in that reference is made to the drawings3, the composite buffer layer 2 further comprises a two-dimensional GaN layer 24 with a thickness of 30nm. Correspondingly, in the preparation method, the two-dimensional GaN layer 24 is grown by molecular beam epitaxy, the substrate temperature is 700 ℃, and the cavity pressure is 10 -5 mbar。
The remainder was the same as in example 3.
Example 5
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 4 in that Sc 2 O 3 The thickness of the layer 22 is 20nm and the thickness of the two-dimensional GaN layer 24 is 40nm, i.e., sc 2 O 3 The thickness of layer 22 < the thickness of ScN layer 23 < the thickness of two-dimensional GaN layer 24.
The remainder was the same as in example 4.
Comparative example 1
This comparative example provides a light emitting diode epitaxial wafer, which is different from example 1 in that the composite buffer layer 2 is an AlN layer having a thickness of 250nm. Correspondingly, in the preparation method, a magnetron sputtering method (PVD) is adopted to grow an AlN layer, the growth temperature is 550 ℃, the power is 4000W, ar is adopted as sputtering gas and N is adopted during growth 2 Al is used as a sputtering target material, and a small amount of O is introduced 2 And adjusting the crystal quality. The remainder was the same as in example 1.
Comparative example 2
This comparative example provides a light emitting diode epitaxial wafer which differs from example 1 in that Sc is not included in the composite buffer layer 2 2 O 3 Layer 22 and ScN layer 23. Accordingly, the preparation method does not include a step of preparing the above two layers. The remainder was the same as in example 1.
Comparative example 3
This comparative example provides a light emitting diode epitaxial wafer which differs from example 1 in that Sc is not included in the composite buffer layer 2 2 O 3 Layer 22. Accordingly, the preparation process does not include a step of preparing the layer. The remainder was the same as in example 1.
The light emitting diode epitaxial wafers obtained in examples 1 to 5 and comparative examples 1 to 3 were prepared into 10 mil-by-24 mil chips using the same process conditions, 300 chips were prepared in each example and comparative example, and tested at 120mA current, and the improvement rate of the light efficiency in each example was calculated based on comparative example 1, and the specific calculation results were shown in the following table:
| luminescence brightness enhancement (%) | |
| Example 1 | 1.77％±0.05％ |
| Example 2 | 2.35％±0.04％ |
| Example 3 | 3.14％±0.02％ |
| Example 4 | 3.87％±0.05％ |
| Example 5 | 4.55％±0.03％ |
| Comparative example 1 | - |
| Comparative example 2 | 0.51％±0.03％ |
| Comparative example 3 | 0.75％±0.02％ |
As can be seen from the table, when the conventional light emitting diode structure (comparative example 1) was changed to the composite buffer layer structure of the present invention, the light efficiency was effectively improved. Further, as can be seen from comparison of example 1 with comparative examples 2 to 3, it is difficult to effectively enhance the brightness when the composite buffer layer structure in the present invention is changed.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.
Claims (10)
1. The light-emitting diode epitaxial wafer is characterized by comprising a silicon substrate, and a composite buffer layer, an intrinsic GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer which are sequentially arranged on the silicon substrate, wherein the composite buffer layer comprises a Y layer which is sequentially laminated 2 O 3 Layer, sc 2 O 3 Layers and a ScN layer.
2. The light-emitting diode epitaxial wafer of claim 1, wherein Y 2 O 3 The thickness of the layer is less than 20nm.
3. The light-emitting diode epitaxial wafer of claim 2, wherein Y 2 O 3 The thickness of the layer is 1 nm-10 nm, the Sc 2 O 3 The thickness of the layer is 10 nm-100 nm, and the thickness of the ScN layer is 10 nm-100 nm.
4. The light-emitting diode epitaxial wafer according to any one of claims 1 to 3, wherein the composite buffer layer further comprises a two-dimensional GaN layer, the two-dimensional GaN layer being disposed between the ScN layer and the intrinsic GaN layer, and the thickness of the two-dimensional GaN layer being 10nm to 100nm.
5. The light-emitting diode epitaxial wafer of claim 4Characterized in that the Sc is 2 O 3 The thickness of the layer < the thickness of the ScN layer < the thickness of the two-dimensional GaN layer.
6. A method for preparing the light-emitting diode epitaxial wafer, which is used for preparing the light-emitting diode epitaxial wafer according to any one of claims 1 to 6, and is characterized by comprising the following steps:
providing a silicon substrate, sequentially growing a composite buffer layer, an intrinsic GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer on the silicon substrate, wherein the composite buffer layer comprises sequentially laminated Y layers 2 O 3 Layer, sc 2 O 3 Layers and a ScN layer.
7. The method for manufacturing a light-emitting diode epitaxial wafer according to claim 6, wherein Y 2 O 3 The layer is grown by molecular beam epitaxy, the substrate temperature is 600-700 ℃, and the cavity pressure is 10% -7 mbar～10 -5 mbar；
The Sc is 2 O 3 The layer is grown by molecular beam epitaxy, the temperature of the substrate is 450-550 ℃, and the pressure of the cavity is 10% -7 mbar～10 -5 mbar；
The ScN layer is epitaxially grown by a plasma molecular beam, the substrate temperature is 300-800 ℃, and the cavity pressure is 10 - 8 mbar～10 -7 The power of the plasma generator is 250W-350W.
8. The method of manufacturing a light emitting diode epitaxial wafer according to claim 6 or 7, wherein the composite buffer layer further comprises a two-dimensional GaN layer disposed between the ScN layer and the intrinsic GaN layer.
9. The method for preparing an epitaxial wafer of a light-emitting diode according to claim 8, wherein the two-dimensional GaN layer is grown by molecular beam epitaxy, the substrate temperature is 600-800 ℃, and the cavity pressure is 10% -6 mbar～10 -4 mbar。
10. A light emitting diode comprising the light emitting diode epitaxial wafer according to any one of claims 1 to 5.
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