CN117804093A - Multilayer film radiation refrigeration device based on photonic crystal sidebands - Google Patents
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- 230000005855 radiation Effects 0.000 title claims abstract description 52
- 238000005057 refrigeration Methods 0.000 title claims abstract description 33
- 239000004038 photonic crystal Substances 0.000 title claims abstract description 26
- 238000010521 absorption reaction Methods 0.000 claims abstract description 35
- 239000003989 dielectric material Substances 0.000 claims abstract description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 12
- 239000010936 titanium Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000004044 response Effects 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 28
- 239000010409 thin film Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 5
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- 238000010168 coupling process Methods 0.000 claims description 2
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- 239000000463 material Substances 0.000 abstract description 10
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- 238000000862 absorption spectrum Methods 0.000 description 19
- 238000001816 cooling Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000006096 absorbing agent Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000012986 modification Methods 0.000 description 4
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
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- 239000004332 silver Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
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- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Abstract
A multi-layer film radiation refrigeration device based on photonic crystal sidebands relates to radiation refrigeration devices. The multilayer film is sequentially provided with an impedance matching layer, a high-loss metallic titanium layer, a one-dimensional photonic crystal, a phase compensation layer, a uniform light thickness reflective film and a supporting substrate layer from top to bottom: the one-dimensional photonic crystal is made of infrared transparent dielectric materials with alternating high and low refractive indexes; the broadband wide-angle high reflection is realized by utilizing the sidebands of the photonic crystal, the broadband response is excited by utilizing the high-loss metal titanium layer and the impedance matching layer, the absorptivity is improved, the change of the propagation phase is controlled by utilizing the phase compensation layer, and the broadband wide-angle absorption characteristic of the atmosphere transparent window is formed, so that the passive radiation refrigeration function is realized. Compared with other materials, the invention can be manufactured in a large area without etching and has high radiation refrigeration power.
Description
Technical Field
The invention relates to a radiation refrigeration device, in particular to a multi-layer film radiation refrigeration device based on photonic crystal sidebands, which has wide-band wide-angle high emissivity at an atmosphere transparent window (8-13 um) and high radiation refrigeration power at night.
Background
Radiation refrigeration achieves a reduction in temperature mainly by the radiation of the object itself. The universe provides an ideal cold source with very low temperature for realizing radiation refrigeration. On one hand, the object can avoid the temperature rise of the object by reflecting the sunlight on the surface, and on the other hand, the object can transfer the heat to the outer space for radiation heat exchange through an atmospheric window of 8-13um, thereby realizing radiation refrigeration. The tip technology is established on the principle of optical regulation of functional materials, and heat is scattered into the universe by utilizing heat radiation, so that the technology is an extremely energy-saving, noise-free and environment-friendly high-quality refrigeration mode and has wide application prospects in various fields including space application and industrial production.
In order to achieve radiation cooling, many researchers have made an important contribution and explored different technical approaches, such as: based on the multi-layer medium photon structure, raman et al firstly uses multi-layer film radiation cooling material as radiation cooling, designs a radiation cooling material formed by alternately depositing 7 kinds of hafnium dioxide and silicon dioxide films with different thicknesses on silver flakes, has strong emissivity in an atmospheric transparent window band of 8-13um, and has about 40.1W/m under the condition that the structure is the same as the ambient temperature through experiments 2 Is used for the net refrigeration power of the air conditioner. Based on a multi-layer polymer photon structure, a radiation cooler is prepared by combining a polymer and a metal reflecting substrate, kou and the like utilize 10 mu m Polydimethylsiloxane (PDMS) as a top layer, a silver layer is used as a bottom layer reflector, a double-layer coating is deposited by using an electron beam evaporation method in a high vacuum environment, a polymer material with a simple structure is successfully prepared, and a performance test shows that the material has a net cooling power of 127W/m at an environmental temperature of 26 DEG C 2 The greatest problem with the polymeric materials themselves is their failure due to their susceptibility to degradation in the outdoor environment. Based on a metamaterial micro-nano photon structure, unlike natural materials, the metamaterial is mainly prepared in a laboratory, and the property of the metamaterial is determined by an artificial structure; thus, specific electromagnetic properties such as conical metamaterials, gradient metamaterials and multicellular metamaterials can be obtained by periodically adjusting the internal macrostructure thereof, and Hossain et al firstly propose and manufacture conical and anisotropic metamaterials composed of alternating aluminum layers and chromium layers, wherein the cylindrical structures of the conical metamaterials have a magnetic field of up to 116.6W/m at ambient temperature 2 Extremely high cooling power of (2); however, the metamaterial formed in the multi-scale mode has a complex structure, is difficult to prepare by a process, and limits further application of the metamaterial.
Compared with metamaterial and polymer, the multilayer film radiation cooling material has larger development potential in the practical application field of radiation cooling because of the characteristics of large area and easy processing. Research shows that the one-dimensional photonic crystal sideband has wide-angle broadband characteristic, and the radiation refrigeration device with infrared broadband and high emissivity is designed by utilizing the condition. The spectrum absorption band range is enlarged by stacking different types of films, and a more excellent emission spectrum is obtained.
Disclosure of Invention
The invention aims to overcome the defects of the existing radiation refrigeration technology and provides a multilayer film radiation refrigeration device which realizes wide-band wide-angle and high refrigeration efficiency and is beneficial to mass production.
The invention provides a multilayer thin radiation refrigeration device which is sequentially provided with an impedance matching layer, a high-loss metal titanium layer, a one-dimensional photon crystal, a phase compensation layer, a uniform light thickness reflective film and a supporting substrate layer from top to bottom; the impedance matching layer and the high-loss metallic titanium layer are used for exciting broadband response and improving absorptivity, the one-dimensional photonic crystal is used for generating broadband wide-angle reflection sidebands, the phase compensation layer is used for controlling changes of propagation phases, the uniform light thick reflection film is used for coupling to form an absorption broadband, selective absorption property and absorption efficiency are improved, thermal stability is not affected, and broadband wide-angle absorption characteristics of an atmosphere transparent window are formed in total.
The impedance matching layer is prepared from an infrared transparent dielectric material, the real part n of the infrared transparent dielectric material is a real number larger than 0, the imaginary part n of the infrared transparent dielectric material is 0, the infrared transparent dielectric material is a lossless medium, the thickness of the infrared transparent dielectric material is 550-800 nm, and the refractive index of the infrared transparent dielectric material is 2.5-4.
The high-loss metallic titanium layer has broadband infrared absorption property and the thickness is 40-140 nm.
The one-dimensional photonic crystal is formed by stacking unit lattices, wherein the unit lattices are formed by a layer of infrared transparent dielectric material film with high refractive index and a layer of infrared transparent dielectric material film with low refractive index, and the thickness of the unit lattices is 300-400 nm, and the number of the unit lattices is 5-7.
The phase compensation layer is prepared from an infrared transparent dielectric material, the thickness is 100-250 nm, and the refractive index is 1-5.
The uniform light thickness reflective film is prepared from noble metal with flexibly controllable resonance absorption peak, stable physicochemical property and high reflectivity, such as Ag, au, al, cu, and has a thickness of more than 100nm.
The working principle of the invention is as follows: the broadband wide-angle high reflection is realized by utilizing the sidebands of the photonic crystal, the broadband response is excited by utilizing the high-loss metal titanium layer and the impedance matching layer, the absorptivity is improved, the change of the propagation phase is controlled by utilizing the phase compensation layer and the uniform light thickness reflective film, and the broadband wide-angle absorption characteristic of the atmosphere transparent window is formed, so that the passive radiation refrigeration function is realized.
Compared with the prior art, the invention has the following beneficial effects:
1. compared with the prior device, the multilayer film radiation refrigeration device provided by the invention has higher average absorptivity in the working wave band (8-13 um) and higher reflectivity in other wave bands, the absorber always maintains the high absorption characteristic of more than 90 percent in the incidence angle range of 0-50 degrees, and the average absorptivity gradually decreases along with the increase of the angle when the angle exceeds 50 degrees, but still maintains higher average absorptivity in the whole. The wide-angle broadband absorption characteristic is provided, and the wide-angle broadband absorption broadband radiation refrigeration system has great application potential in the radiation refrigeration direction.
2. The multi-layer film radiation refrigerating device provided by the invention has good polarization independence, and has slight difference in absorption characteristics when light with different polarizations is incident, but has good performance. The influence of the angle on the incidence of TE polarized light is slightly larger than that of TM polarized light; however, in the case of TE polarized light incidence, an average absorptivity of 80% or more can be achieved at 0 to 60 °.
3. The material required by the multi-layer film radiation refrigerating device provided by the invention is conventional, and the multi-layer film radiation refrigerating device is easy to realize. The structure is simple, large-area preparation without optical etching can be realized, a complex micro-nano process is avoided, the preparation efficiency is improved, and the preparation cost is reduced.
4. The multi-layer film radiation refrigerating device provided by the invention can realize high emissivity in an atmospheric transparent window, can be used for radiation refrigerating devices and realizes high-power night radiation refrigerating.
Drawings
Fig. 1 is a schematic view of the structure of the device of the present invention.
FIG. 2 is a graph showing the average absorption spectrum of example 1 of the present invention.
Fig. 3 is a refrigeration power diagram of embodiment 1 of the present invention.
FIG. 4 is a graph showing the average absorption spectrum at different incident angles for example 1 of the present invention.
FIG. 5 is a graph showing the average absorption spectrum at 0-80℃under different polarized light incidence in example 1 of the present invention.
FIG. 6 is a graph showing the absorption spectrum of example 2 of the present invention at normal incidence.
FIG. 7 is a graph showing the absorption spectrum of the impedance matching layer according to example 2 of the present invention at the time of light normal incidence.
Fig. 8 is an absorption spectrum of the refractive index of the impedance matching layer at the time of light normal incidence in example 2 of the present invention.
Fig. 9 is a graph showing the absorption spectrum of the unit cell number at the time of light normal incidence in example 3 of the present invention.
Fig. 10 is a graph showing the absorption spectrum of the unit cell thickness at the time of light normal incidence in example 3 of the present invention.
FIG. 11 is a graph showing the absorption spectrum of example 4 of the present invention at normal incidence.
FIG. 12 is a graph showing the absorption spectrum of example 5 of the present invention at normal incidence.
FIG. 13 is a graph showing the absorption spectrum of the phase compensation layer thickness at normal incidence of light according to example 5 of the present invention.
Fig. 14 is an absorption spectrum of the phase compensation layer according to embodiment 5 of the present invention at normal incidence.
Detailed Description
The present invention will be described with reference to the following specific examples and drawings, but the scope of the present invention is not limited to the following examples. Modifications to the following embodiments will be readily apparent to those skilled in the art, and the generic principles may be applied to other embodiments without the use of the inventive faculty. It is therefore contemplated that modifications and improvements of the present invention will readily occur to those skilled in the art, upon review of the teachings of the present invention, and are intended to be within the scope of the following claims.
As shown in fig. 1, the multi-layer thin film radiation refrigeration device based on photonic crystal sidebands is provided with an impedance matching layer 1, a high-loss metal titanium layer 2, a one-dimensional photonic crystal 3, a phase compensation layer 4, a uniform light thickness reflective thin film 5 and a supporting substrate layer 6 from top to bottom. The specific embodiments using the present invention are as follows:
example 1
The multilayer film radiation refrigerator comprises a 640nm impedance matching layer, wherein the material is silicon, and the refractive index is 3.47; a high-loss metallic titanium layer with a thickness of 90nm and a relative dielectric constant described by a Drude model; the one-dimensional photonic crystal is prepared from zinc sulfide and chromium serving as unit lattice materials, wherein the refractive indexes are 2.2 and 4 respectively, the thicknesses are 180nm, and 6 unit lattices are used in total; the phase compensation layer is made of silicon and has a thickness of 160nm; the uniform light thickness reflective film is made of silver with the thickness of 100nm, and the supporting substrate layer is a base, so that experimental calculation is not participated. The average absorption spectrum of the device is shown as a black solid line in fig. 2, is basically matched with an atmospheric infrared transparent window (gray solid line), and the average absorption rate of the device is 83.8 percent in the working wave band of 8-13 mu m and 0-80 degrees.
The radiation refrigeration power of the radiation refrigerator of example 1 under no sunlight is shown in fig. 3, in an ideal case, assuming that the ambient temperature is 300K, the four cases of heat conduction coefficient q= 0,1,3,6.9W/m2/K are selected to discuss the radiation refrigeration performance of the absorber, and the net cooling power P of the ideal radiator and the refrigeration device of this example can be known by calculation net Relationship to temperature Tr. When the non-radiative heat transfer coefficient is not available, the refrigerating power of the radiation refrigerating device of the embodiment is close to that of an ideal radiator, and when the ambient temperature is 300K, namely P is under natural light net Can reach 126.4W/m 2 About, even when Q=6.9W/m 2 In the case of/K, the equilibrium temperature is 286K, which is higher than the ambient temperatureLow 14K and good radiation refrigerating performance.
In the embodiment 1, as shown in fig. 4, when the incident angle θ is enlarged from 0 ° to 30 °, the absorption spectrum of the radiation refrigeration device in the working band (8-13 um) is not changed, and the average absorption rate is above 90%; the average absorption of the device reached 90.2% at an angle of incidence of 50 °, whereas the average absorption slowly decreased with increasing angle at angles of incidence exceeding 50 °, but overall still maintained a higher average absorption.
Example 1 the absorption spectrum for the implementation at different polarizations is shown in figure 5. When light with different polarization is incident, the absorption characteristics are slightly different, but the light has good performance, and the average absorption rate at 0-80 degrees can reach 82.2% and 85.4% respectively.
Example 2
The modification of the thickness of the top impedance matching layer silicon was performed on the basis of example 1, and detailed changes in the absorption rate at thicknesses of 0, 550nm, 600nm, 650nm, and 700nm were shown in fig. 6. As shown in FIG. 7, the change relation of the absorber with the thickness can be seen, the absorption rate can be influenced by modifying the thickness of the top medium, wherein the absorption rate of the weak absorption peak is reduced, the right side band is widened to a larger wavelength, experiments show that the broadband absorption effect can be realized within the range of 550-800, especially the effect is optimal when the thickness is 640nm, the change relation of the absorber with the refractive index of the impedance matching layer is shown in FIG. 8, and the better effect can be realized when the refractive index is within the range of 2.5-4.
Example 3
On the basis of the embodiment 1, the number of unit lattices in the one-dimensional photonic crystal is modified to be 4, 5, 6, 7 and 8, the absorption spectrum of the device is shown in fig. 9, the influence of a broadband and sidebands along with the period is larger, the absorption band can be subjected to red shift along with the period increase and the sidebands are increased, when the period is 6, the broadband can perfectly cover a working band and has higher average absorptivity, the absorption spectrum along with the thickness change relation of the unit lattices is shown in fig. 10, the broadband absorption effect is better in the range of 300-400 nm, and especially the 360nm effect is optimal.
Example 4
On the basis of the embodiment 1, the thickness of the high-loss metal titanium layer is modified and implemented respectively, and the spectrum diagram of the absorber is shown in fig. 11, and experiments show that better broadband absorption effect can be realized within the range of 40-140 nm, and especially the effect is optimal when the thickness is 90 nm.
Example 5
Based on the embodiment 1, the phase compensation layer silicon is removed, and the pair of the phase compensation layer silicon and the original absorber is shown in fig. 12 under different angles, the silicon layer is used as the phase compensation layer to influence the red shift of the photonic crystal sidebands so as to offset the blue shift generated by the change of the incident angle, the absorption spectrum has obvious broadband absorption effect along with the thickness change of the phase compensation layer as shown in fig. 13, the thickness is in the range of 100-250 nm, the working wave band can be covered, the absorption spectrum has good refractive index along with the refractive index change of the phase compensation layer as shown in fig. 14, and the refractive index is in the range of 1-5.
The above-described embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications within the scope of the present invention are intended to be covered by the present invention.
Claims (7)
1. A multi-layer film radiation refrigeration device based on photonic crystal sidebands is characterized in that an impedance matching layer, a high-loss metal titanium layer, a one-dimensional photonic crystal, a phase compensation layer, a uniform light thickness reflection film and a supporting substrate layer are sequentially arranged from top to bottom; the impedance matching layer and the high-loss metallic titanium layer are used for exciting broadband response and improving absorptivity, the one-dimensional photonic crystal is used for generating broadband wide-angle reflection sidebands, the phase compensation layer is used for controlling changes of propagation phases, the uniform light thick reflection film is used for coupling to form an absorption broadband, selective absorption property and absorption efficiency are improved, thermal stability is not affected, broadband wide-angle absorption characteristics of an atmospheric transparent window are formed, and therefore passive radiation refrigeration is achieved.
2. The multi-layer thin film radiation refrigeration device based on photonic crystal sidebands as recited in claim 1, wherein the impedance matching layer is made of an infrared transparent dielectric material, the real parts n of the infrared transparent dielectric material are real numbers larger than 0, the imaginary parts k are 0, the thickness of the infrared transparent dielectric material is 550-800 nm, and the refractive index of the infrared transparent dielectric material is 2.5-4.
3. The multi-layer thin film radiation refrigeration device based on photonic crystal sidebands as recited in claim 1, wherein the high-loss metallic titanium layer has broadband infrared high absorption characteristics and has a thickness of 40-140 nm.
4. The multi-layer film radiation refrigerating device based on photonic crystal sidebands as recited in claim 1, wherein the one-dimensional photonic crystal is composed of a plurality of unit lattice stacks, the unit lattice is composed of a layer of infrared transparent dielectric material film with high refractive index and a layer of infrared transparent dielectric material film with low refractive index, and the unit lattice thickness is 300-400 nm, and the number is 5-7.
5. The multi-layer thin film radiation refrigerating device based on photonic crystal sidebands as recited in claim 1, wherein the phase compensation layer is made of infrared transparent dielectric material, and has a thickness of 100-250 nm and a refractive index of 1-5.
6. The multi-layer film radiation refrigerating device based on photonic crystal sidebands as recited in claim 1, wherein the uniform light thickness reflective film is prepared from noble metal with flexibly controllable resonance absorption peak, stable physicochemical property and high reflectivity.
7. The multi-layer thin film radiation refrigerating device based on photonic crystal sidebands as recited in claim 1, wherein the uniform light thickness reflective thin film is Ag, au, al, cu with a thickness greater than 100nm.
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