CN117795653A - Substrate processing method and substrate processing apparatus - Google Patents
Substrate processing method and substrate processing apparatus Download PDFInfo
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- CN117795653A CN117795653A CN202280055799.7A CN202280055799A CN117795653A CN 117795653 A CN117795653 A CN 117795653A CN 202280055799 A CN202280055799 A CN 202280055799A CN 117795653 A CN117795653 A CN 117795653A
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- substrate
- gas
- etching amount
- wafer
- temperature
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- 239000000758 substrate Substances 0.000 title claims abstract description 163
- 238000012545 processing Methods 0.000 title claims abstract description 143
- 238000003672 processing method Methods 0.000 title claims abstract description 36
- 239000007788 liquid Substances 0.000 claims abstract description 139
- 238000005530 etching Methods 0.000 claims abstract description 112
- 230000002093 peripheral effect Effects 0.000 claims abstract description 26
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 16
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims description 165
- 230000001105 regulatory effect Effects 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 21
- 238000007664 blowing Methods 0.000 claims description 7
- 239000000112 cooling gas Substances 0.000 claims description 4
- 238000010792 warming Methods 0.000 claims description 4
- 230000001276 controlling effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 192
- 238000004140 cleaning Methods 0.000 description 38
- 230000008569 process Effects 0.000 description 18
- 230000032258 transport Effects 0.000 description 16
- 230000007246 mechanism Effects 0.000 description 14
- 238000012546 transfer Methods 0.000 description 11
- 239000012530 fluid Substances 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 210000000078 claw Anatomy 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a substrate processing method and a substrate processing apparatus. The substrate processing method of the embodiment of the invention comprises the following steps: a step of supplying an SPM treatment liquid to the central portion of the substrate (W) while holding and rotating the substrate (W), wherein the SPM treatment liquid is a mixed liquid of sulfuric acid and hydrogen peroxide, and obtaining a reference etching amount corresponding to the radial position of the substrate (W) when the etching amount of the central portion of the substrate (W) becomes a target etching amount; and a step of adjusting the moving speed of a supply nozzle (42) for supplying the SPM processing liquid so as to eliminate the difference between the target etching amount and the reference etching amount when the SPM processing liquid is supplied from the peripheral edge portion of the substrate (W) to the central portion of the substrate (W) and the substrate (W) is processed by the SPM processing liquid.
Description
Technical Field
The present invention relates to a substrate processing method and a substrate processing apparatus.
Background
Patent document 1 discloses a technique of supplying an SPM treatment liquid, which is a mixed liquid of sulfuric acid and hydrogen peroxide water, to a substrate while moving the SPM treatment liquid from a peripheral edge portion of the substrate to a central portion of the substrate, and performing a substrate treatment.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 2020-170801
Disclosure of Invention
Technical problem to be solved by the invention
The present invention provides a technique for improving in-plane uniformity of a substrate in substrate processing.
Technical scheme for solving technical problems
The substrate processing method according to an embodiment of the present invention includes: a step of supplying an SPM treatment liquid to a central portion of the substrate in a state where the substrate is held and rotated, and obtaining a reference etching amount corresponding to a radial position of the substrate when the etching amount of the central portion of the substrate becomes a target etching amount, wherein the SPM treatment liquid is a mixed liquid of sulfuric acid and hydrogen peroxide; and a step of adjusting the moving speed of a supply nozzle for supplying the SPM processing liquid so as to eliminate the difference between the target etching amount and the reference etching amount when the SPM processing liquid is supplied from the peripheral edge portion of the substrate to the central portion of the substrate and the substrate is processed by the SPM processing liquid.
Effects of the invention
According to the present invention, the in-plane uniformity of the substrate during the substrate processing can be improved.
Drawings
Fig. 1 is a diagram showing a structure of a substrate processing system according to an embodiment.
Fig. 2 is a diagram showing a configuration of a processing unit according to an embodiment.
Fig. 3 is a perspective view of an adjusting plate of an embodiment.
Fig. 4 is a flowchart illustrating a substrate process performed by the processing unit of the embodiment.
Fig. 5 is a graph showing a target etching amount and a reference etching amount with respect to a radial position of a wafer.
Fig. 6 is a graph showing the reference etching amount and the target etching amount when there is a portion where the reference etching amount is locally reduced in the radial direction of the wafer.
Detailed Description
Hereinafter, modes (hereinafter referred to as "embodiments") for carrying out the substrate processing method and the substrate processing apparatus according to the present invention will be described in detail with reference to the drawings. The present embodiment is not limited to the substrate processing method and the substrate processing apparatus of the present invention.
In the drawings referred to below, for ease of explanation, an orthogonal coordinate system defining an X-axis direction, a Y-axis direction, and a Z-axis direction orthogonal to each other and having a positive Z-axis direction in a vertically upward direction may be shown.
< substrate processing System >
Fig. 1 is a diagram showing a structure of a substrate processing system 1 according to an embodiment. As shown in fig. 1, a substrate processing system 1 has an in-and-out station 2 and a processing station 3. The infeed and outfeed stations 2 and the processing station 3 are arranged adjacently.
The carry-in/carry-out station 2 has a carrier loading section 11 and a conveying section 12. A plurality of carriers C for storing a plurality of substrates (hereinafter referred to as "wafers W") in a horizontal state are mounted on the carrier mounting portion 11.
The transport section 12 is provided adjacent to the carrier mounting section 11, and includes a substrate transport device 13 and a transfer section 14. The substrate transport apparatus 13 has a substrate holding mechanism that holds a wafer W. The substrate transport apparatus 13 is capable of moving in the horizontal direction and the vertical direction and rotating about a vertical axis, and transports the wafer W between the carrier C and the transfer section 14 using the substrate holding mechanism.
The processing station 3 is disposed adjacent to the conveying section 12. The processing station 3 includes a transport section 15 and a plurality of processing units 16 (an example of a substrate processing apparatus). A plurality of processing units 16 are disposed in a row on both sides of the conveying section 15.
The transport section 15 has a substrate transport device 17 inside. The substrate transport apparatus 17 has a substrate holding mechanism that holds a wafer W. The substrate transport apparatus 17 is capable of moving in the horizontal direction and the vertical direction and rotating about a vertical axis, and transports the wafer W between the transfer section 14 and the processing unit 16 using the substrate holding mechanism.
The processing unit 16 performs a predetermined substrate process on the wafer W conveyed by the substrate conveying device 17.
In addition, the substrate processing system 1 has a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 can store programs for controlling various processes performed in the substrate processing system 1. The control unit 18 reads out the program stored in the storage unit 19 and executes the program, thereby controlling the operation of the substrate processing system 1.
The program may be recorded in a computer-readable storage medium, and may be installed from the storage medium to the storage unit 19 of the control device 4. Examples of the storage medium readable by the computer include a Hard Disk (HD), a Flexible Disk (FD), an optical disk (CD), a magneto-optical disk (MO), and a memory card.
In the substrate processing system 1 configured as described above, first, the substrate transport device 13 of the carry-in/out station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11, and places the taken-out wafer W on the transfer unit 14. The wafer W placed on the transfer section 14 is taken out from the transfer section 14 by the substrate transport apparatus 17 of the processing station 3, and is fed into the processing unit 16.
After being processed by the processing unit 16, the wafer W fed into the processing unit 16 is fed out from the processing unit 16 by the substrate transport apparatus 17 and placed on the transfer section 14. Then, the processed wafer W placed on the transfer section 14 is returned to the carrier C of the carrier placement section 11 by the substrate transport apparatus 13.
< Structure of processing Unit >
Next, referring to fig. 2, the structure of the processing unit 16 will be described. Fig. 2 is a diagram showing the configuration of the processing unit 16 according to the embodiment.
The processing unit 16 shown in fig. 2 is configured to perform the processing by mixing the sulfuric acid and hydrogen peroxide in a mixed solution, that is, SPM (Sulfuric Acid Hydrogen Peroxide Mixture, sulfuric acid-hydrogen peroxide solution) is supplied to the front surface (upper surface) of the wafer W, for example, to remove a film formed on the surface of the wafer W. In addition, the processing unit 16 is configured to control the temperature of the gas by adjusting the temperature of the gas N 2 The gas is supplied to the back surface (lower surface) of the wafer W to adjust the temperature of the wafer W. By combining N 2 The gas is supplied to the back surface of the wafer W, and the back surface of the wafer W can be suppressed from becoming negative pressure.
The process unit 16 has a chamber 20, a substrate holding mechanism 21, a process fluid supply portion 22, and a recovery cup portion 23.
The chamber 20 houses a portion of the substrate holding mechanism 21, a portion of the processing fluid supply section 22, and the recovery cup section 23. At the top of the chamber 20 is provided an FFU (Fan Filter Unit) 24. The FFU24 creates a downdraft within the chamber 20.
The substrate holding mechanism 21 holds and rotates the wafer W. The substrate holding mechanism 21 has a holding portion 30, a pillar portion 31, and a driving portion 32. The holding portion 30 (an example of a substrate holding portion) holds the wafer W (an example of a substrate). The holding portion 30 holds the wafer W horizontally. The holding portion 30 has a claw portion 30a for holding the wafer W. The holding portion 30 includes a motor (not shown) or the like for opening and closing the claw portion 30a.
The column portion 31 is a member extending in the vertical direction, and has a base end rotatably supported by the driving portion 32 and a tip end horizontally supporting the holding portion 30. The driving unit 32 rotates the column unit 31 about the vertical axis. The driving unit 32 moves the column unit 31 in the up-down direction. The driving section 32 includes, for example, a plurality of motors, gears and link mechanisms that transmit rotation generated by the motors, and the like.
The substrate holding mechanism 21 rotates the support column 31 by using the driving unit 32, and rotates the holding unit 30 supported by the support column 31. That is, the driving unit 32 (an example of a rotating unit) rotates the holding unit 30 (an example of a substrate holding unit). Thereby, the wafer W held by the holding portion 30 rotates.
The processing fluid supply section 22 supplies various liquids used in the substrate processing to the wafer W. The treatment fluid supply section 22 includes a treatment fluid supply section 40, a cleaning fluid supply section 50, a first arm drive section 60, and a second arm drive sectionPortion 61, first N 2 Gas supply portion 70 and second N 2 A gas supply section 80.
The processing liquid supply unit 40 supplies the SPM processing liquid to the wafer W. The processing liquid supply unit 40 supplies the SPM processing liquid to the front surface of the wafer W.
The processing liquid supply section 40 includes a processing liquid supply source 41, a processing liquid supply nozzle 42, and a processing liquid adjustment section 43.
The processing liquid supply nozzle 42 is connected to the processing liquid supply source 41 via the processing liquid adjusting section 43. The processing liquid supply nozzle 42 (an example of a supply nozzle) supplies the SPM processing liquid, which is a mixed liquid of sulfuric acid and hydrogen peroxide, to the wafer W (an example of a substrate). The treatment liquid supply nozzle 42 is mounted on the first support arm 45.
The processing liquid adjusting section 43 adjusts the flow rate of the SPM supplied from the processing liquid supply nozzle 42 to the front surface of the wafer W. The treatment liquid adjusting section 43 includes an on-off valve (not shown), a flow rate adjusting valve (not shown), a motor (not shown) for operating the valves, and the like.
The cleaning liquid supply unit 50 supplies cleaning liquid to the wafer W. The cleaning solution was DIW (DeIonized Water: deIonized Water). The cleaning solution is at normal temperature. The cleaning liquid supply unit 50 supplies cleaning liquid to the front surface of the wafer W.
The cleaning liquid supply portion 50 includes a cleaning liquid supply source 51, a cleaning liquid supply nozzle 52, and a cleaning liquid adjustment portion 53.
The cleaning liquid supply nozzle 52 supplies cleaning liquid to the surface of the wafer W. The cleaning liquid supply nozzle 52 is connected to the cleaning liquid supply source 51 via a cleaning liquid adjusting portion 53. The cleaning liquid supply nozzle 52 is mounted to the first support arm 45.
The cleaning liquid adjusting section 53 adjusts the flow rate of the cleaning liquid supplied from the cleaning liquid supply nozzle 52 to the surface of the wafer W. The cleaning liquid adjusting section 53 includes an on-off valve (not shown), a flow rate adjusting valve (not shown), a motor (not shown) for operating the valves, and the like. The cleaning liquid adjusting portion 53 can adjust the flow rate of the cleaning liquid in the cleaning liquid supply nozzle 52.
The first arm driving unit 60 moves the first support arm 45 in the up-down direction. The first arm driving unit 60 rotates the first support arm 45 about the vertical axis. That is, the first arm driving unit 60 (an example of a moving unit) moves the treatment liquid supply nozzle 42 (an example of a supply nozzle). The first arm driving section 60 includes, for example, a plurality of motors, gears and link mechanisms that transmit rotation generated by the motors, and the like.
The first arm driving unit 60 rotates the first support arm 45 to move the treatment liquid supply nozzle 42 and the cleaning liquid supply nozzle 52 in the radial direction of the wafer W.
The first arm driving unit 60 rotates the first support arm 45 to move the treatment liquid supply nozzle 42 and the cleaning liquid supply nozzle 52 between the standby position and the center position. The standby position is a state where the processing liquid supply nozzle 42 and the cleaning liquid supply nozzle 52 are not located above the wafer W, and is a position where the SPM processing liquid or the like is not supplied to the wafer W. The central position is a state where the processing liquid supply nozzle 42 and the cleaning liquid supply nozzle 52 are located above the central portion of the wafer W, and is a position where the SPM processing liquid or the like is supplied to the central portion of the wafer W.
When the processing liquid supply nozzle 42 and the cleaning liquid supply nozzle 52 are moved from the standby position to the central position, the first arm driving unit 60 moves the processing liquid supply nozzle 42 and the cleaning liquid supply nozzle 52 from the peripheral edge portion of the wafer W toward the central portion of the wafer W. Further, the first arm driving unit 60 rotates the first support arm 45 when moving the treatment liquid supply nozzle 42 and the cleaning liquid supply nozzle 52 from the central position to the standby position. Thus, the processing liquid supply nozzle 42 and the cleaning liquid supply nozzle 52 move from the center portion of the wafer W toward the peripheral portion of the wafer W.
First N 2 The gas supply unit 70 supplies N from the back surface side of the wafer W (an example of a substrate) 2 Gas (an example of a temperature-regulated gas). First N 2 The gas supply part 70 includes a regulating plate 71, a plate holding part 72, a first N 2 Gas supply source 73, first N 2 Gas supply nozzle 74 and first N 2 A gas regulating section 75.
The adjusting plate 71 is provided on the back surface side of the wafer W (an example of a substrate) and adjusts N 2 The gas (an example of the temperature-adjusting gas) is blown out to the wafer W. The adjustment plate 71 is disposed below the wafer W held by the holding portion 30 of the substrate holding mechanism 21. The adjustment plate 71 has a first plate 71a and a second plate 71b as shown in fig. 3. FIG. 3 is a schematic diagram of a preferred embodiment of the present inventionThe adjusting plate 71 of the embodiment is a perspective view. In the adjustment plate 71, a first plate 71a is disposed above a second plate 71b.
The first plate 71a is formed in a circular shape. The first plate 71a has a plurality of blowout holes 71c formed therein. The blowout holes 71c are formed in plurality, for example, in the radial direction and the circumferential direction of the first plate 71a. The blowoff holes 71c blow off N toward the back surface of the wafer W 2 Holes for gas.
The second plate 71b is formed in a circular shape. The second plate 71b is provided rotatably in the circumferential direction with respect to the first plate 71a. The second plate 71b is formed with an adjustment hole 71d. The adjusting hole 71d is for adjusting the blow-out of N to the back surface of the wafer W 2 Holes in the location of the gas. The adjustment hole 71d is formed in a fan shape, for example. The shape of the adjustment hole 71d is not limited to this. The adjustment hole 71d may be formed in an arc shape, for example. The plurality of adjustment holes 71d may be formed.
The adjusting plate 71 changes the relative position of the first plate 71a and the second plate 71b in the circumferential direction to change the N blown out to the back surface of the wafer W 2 The location of the gas.
In addition, the adjustment plate 71 may have a plurality of second plates 71b. By changing the relative positions of the plurality of second plates 71b in the circumferential direction, the N blown out from the blow-out holes 71c of the first plate 71a can be finely adjusted 2 The location of the gas.
The adjustment plate 71 may be a single plate. For example, the adjustment plate 71 may be a single plate having an arcuate adjustment hole 71d. The adjustment plate 71 may be a combination of a plurality of first plates 71a and a plurality of second plates 71b.
Returning to fig. 2, the plate holding portion 72 holds the adjustment plate 71. The plate holding portion 72 holds the first plate 71a and the second plate 71b so as to be able to adjust the relative positions of the first plate 71a and the second plate 71b in the circumferential direction. The plate holding portion 72 is supported by the column portion 31.
The plate holding portion 72 rotates together with the column portion 31 when the column portion 31 rotates by the driving portion 32. The plate holding portion 72 may be provided so as not to rotate when the column portion 31 rotates due to the driving portion 32. For example, the plate holding portion 72 may be supported by the column portion 31 via a bearing or the like. The plate holding portion 72 moves in the up-down direction along with the up-down movement of the pillar portion 31.
In addition, the regulating plate 71 and the plate holding portion 72 are provided so as to be capable of carrying in and carrying out the wafer W. For example, a through hole or the like through which a lift pin for delivering and receiving the wafer W is formed in the adjustment plate 71 and the plate holding portion 72.
First N 2 The gas supply nozzle 74 is connected to the first N 2 Gas regulating portion 75 and first N 2 The gas supply source 73 is connected. First N 2 The gas supply nozzle 74 supplies N to the back surface of the wafer W 2 And (3) gas. First N 2 The gas supply nozzle 74 is provided in the center of the plate holding portion 72.
First N 2 The gas regulating part 75 regulates the flow of gas from the first N 2 N supplied from the gas supply nozzle 74 to the back surface of the wafer W 2 Flow rate of gas. First N 2 The gas regulating unit 75 includes an on-off valve (not shown), a flow rate regulating valve (not shown), a motor (not shown) for operating the valves, and the like. In addition, the first N 2 The gas regulating unit 75 regulates N 2 The temperature of the gas. For example, first N 2 The gas conditioning unit 75 includes a heater, a gas cooler, and the like.
Second N 2 The gas supply unit 80 supplies N from the front surface side of the wafer W 2 And (3) gas. Second N 2 The gas supply portion 80 includes a second N 2 Gas supply source 81, second N 2 Gas supply nozzle 82 and second N 2 A gas adjusting section 83.
Second N 2 The gas supply nozzle 82 is connected to the second N 2 Gas regulating portion 83 and second N 2 The gas supply source 81 is connected. In addition, the second N 2 The gas supply nozzle 82 may also be connected to the gas supply line via a second N 2 Gas regulating portion 83 and first N 2 The gas supply source 73 is connected. Namely, N can be shared by 2 A gas supply source for supplying a gas to the first N 2 Gas supply nozzle 74 and second N 2 The gas supply nozzle 82 supplies N 2 And (3) gas. Second N 2 The gas supply nozzle 82 is mounted to the second support arm 85. Second N 2 The gas supply nozzle 82 can radially release N 2 And (3) gas.
Second N 2 The gas adjusting part 83 adjusts the flow rate of the gas from the second N 2 N supplied from the gas supply nozzle 82 to the front surface of the wafer W 2 Flow rate of gas. Second N 2 The gas regulating portion 83 includes an on-off valve (not shown), a flow rate regulating valve (not shown), a motor (not shown) for operating each valve, and the like. In addition, the second N 2 The gas adjusting section 83 adjusts N 2 The temperature of the gas. For example, the second N 2 The gas regulating portion 83 includes a heater, a gas cooler, and the like. In addition, adjust N 2 A heater or the like for the temperature of the gas may be provided to the second support arm 85.
The second arm driving unit 61 moves the second support arm 85 in the up-down direction. The second arm driving unit 61 rotates the second support arm 85 about the vertical axis. The second arm driving section 61 includes, for example, a plurality of motors, gears and link mechanisms that transmit rotation generated by the motors, and the like.
The second arm driving unit 61 rotates the second support arm 85 to thereby rotate the second N 2 The gas supply nozzle 82 moves in the radial direction of the wafer W. The second arm driving unit 61, for example, causes the second N 2 The gas supply nozzle 82 moves above the peripheral edge of the wafer W. By adjusting the rotational position of the second arm driving part 61, N supplied to the wafer W is adjusted 2 The blowing position of the gas.
The recovery cup 23 is disposed so as to surround the holding portion 30, and collects the SPM processing liquid and the like scattered from the wafer W due to the rotation of the holding portion 30. A drain port 23a is formed at the bottom of the recovery cup portion 23, and the SPM processing liquid and the like collected by the recovery cup portion 23 are discharged from the drain port 23a to the outside of the processing unit 16. Further, an exhaust port 23b for exhausting the gas supplied from the FFU24 to the outside of the process unit 16 is formed at the bottom of the recovery cup portion 23.
The control device 4 causes the processing unit 16 to perform substrate processing on the wafer W. The control device 4 controls the rotation of the driving unit 32. The control device 4 controls the driving unit 32 to control the rotation speed of the wafer W.
The control device 4 controls the first arm driving unit 60 to adjust the supply position of the SPM treatment liquid supplied from the treatment liquid supply nozzle 42. Specifically, when the SPM treatment liquid is supplied to the wafer W (an example of a substrate), the control device 4 controls the first arm driving unit 60 (an example of a moving unit) so that the treatment liquid supply nozzle 42 (an example of a supply nozzle) moves from the peripheral edge portion of the wafer W to the central portion of the wafer W.
The control device 4 adjusts the moving speed of the processing liquid supply nozzle 42 (an example of a supply nozzle) for supplying the SPM processing liquid so as to eliminate the difference between the target etching amount and the reference etching amount corresponding to the radial position of the wafer W.
The reference etching amount is an etching amount corresponding to a position in the radial direction of the wafer W when the etching amount in the center portion of the wafer W is a target etching amount by supplying the SPM processing liquid to the center portion of the wafer W while the wafer W (an example of a substrate) is held and rotated. The reference etching amount is set to be plural in accordance with the radial position of the wafer W.
< pretreatment >
The following describes the advance processing of the embodiment. The preliminary processing is processing for acquiring a reference etching amount. The preliminary treatment is performed by: in a state where the wafer W (an example of a substrate) is held and rotated, an SPM processing liquid is supplied to the center portion of the wafer W, and a reference etching amount corresponding to the radial position of the wafer W when the etching amount of the center portion of the wafer W becomes a target etching amount is obtained. In the preliminary processing, the wafer W is held by the holding portion 30 of the processing unit 16, and the wafer W is rotated at a predetermined rotation speed. The predetermined rotational speed is a rotational speed set in advance, and is the same rotational speed as that in the substrate processing described later.
Then, the SPM treatment liquid is supplied to the central portion of the wafer W. When the etching amount of the central portion of the wafer W becomes the target etching amount, the supply of the SPM treatment liquid is stopped, and the process is stopped. Then, the etching amount at the radial position of the wafer W is measured, and the reference etching amount is obtained. The reference etching amount is stored in the storage section 19. The reference etching amount may be obtained using the processing unit 16, or may be obtained using another processing unit 16. The reference etching amount is acquired in association with the kind of film formed on the wafer W.
Further, the processing time for which the etching amount of the central portion of the wafer W becomes the target etching amount may be measured, and the same processing may be performed again for the processing time measured for the other wafers W. When the etching amount of the central portion of the other wafer W becomes the target etching amount, the etching amount at the radial position of the wafer W may be measured to obtain the reference etching amount.
When the SPM processing liquid is supplied from the central portion of the rotating wafer W, the SPM processing liquid flows from the central portion of the wafer W to the peripheral portion of the wafer W in a diffusing manner. The temperature of the SPM treatment liquid is different between the central portion of the wafer W and the peripheral portion of the wafer W. Due to the temperature difference of the SPM processing liquid, the etching amount may be different between the peripheral portion of the wafer and the central portion of the wafer W. For example, when the temperature of the SPM processing liquid becomes lower as it goes to the peripheral portion of the wafer W, the etching amount at the peripheral portion of the wafer W is smaller than the etching amount at the central portion of the wafer W. Thus, in the embodiment, a substrate process described below is performed.
< substrate treatment in treatment Unit >
Next, with reference to fig. 4, a substrate process performed by the processing unit 16 of the embodiment will be described. Fig. 4 is a flowchart illustrating a substrate process performed by the processing unit 16 of the embodiment.
The control device 4 executes the feeding process (S100). Specifically, the control device 4 feeds the wafer W into the chamber 20 by the substrate transport device 17, and holds the wafer W by the holding portion 30. For example, the holding portion 30 holds the wafer W so that the wafer W is oriented in a predetermined direction. That is, the holding portion 30 holds the wafers W so that the orientation of each wafer W is uniform.
The control device 4 executes the SPM process (S101). The control device 4 adjusts the moving speed of the processing liquid supply nozzle 42 (one example of the supply nozzle) for supplying the SPM processing liquid so as to eliminate the difference between the target etching amount and the reference etching amount when the SPM processing liquid is processed on the wafer W by moving the supply position of the SPM processing liquid from the peripheral edge portion of the wafer W (one example of the substrate) to the central portion of the wafer W.
Specifically, the control device 4 supplies the SPM treatment liquid to the wafer W while moving the treatment liquid supply nozzle 42 from the peripheral edge portion of the wafer W to the central portion of the wafer W in a state where the rotation speed of the wafer W is set to a predetermined rotation speed.
The control device 4 sets the moving speed of the processing liquid supply nozzle 42 based on the target etching amount and the reference etching amount, and moves the processing liquid supply nozzle 42 from the peripheral edge portion of the wafer W to the central portion of the wafer W. The control device 4 adjusts the moving speed of the processing liquid supply nozzle 42 to eliminate the difference between the target etching amount and the reference etching amount corresponding to the radial position of the wafer W. The control device 4 changes the moving speed of the processing liquid supply nozzle 42 according to the radial position of the wafer W.
For example, as shown in fig. 5, when the reference etching amount is smaller toward the peripheral edge of the wafer W, the control device 4 decreases the moving speed of the processing liquid supply nozzle 42 toward the peripheral edge of the wafer W. Fig. 5 is a diagram showing the target etching amount and the reference etching amount with respect to the radial position of the wafer W. By decreasing the moving speed of the processing liquid supply nozzle 42 at the peripheral edge portion of the wafer W, the amount of the SPM processing liquid supplied to the peripheral edge portion side of the wafer W becomes large (the supply time of the SPM processing liquid becomes long), and thus the etching amount at the peripheral edge portion of the wafer W becomes large.
The control device 4 supplies N to the wafer W (an example of a substrate) 2 Gas (an example of a temperature-regulated gas). For example, the control device 4 supplies N from the back surface of the wafer W (an example of a substrate) 2 Gas (an example of a temperature-regulated gas). N (N) 2 The blowing-out position of the gas (temperature-adjusting gas) is adjusted by the adjusting plate 71. Further, for example, the control device 4 supplies N from the front side of the wafer W (an example of a substrate) 2 Gas (temperature-regulated gas). N (N) 2 The second support arm 85 and the second N are set at the gas blowing position by the second arm driving unit 61 2 The gas supply nozzle 82 is rotated to adjust. For example, N is supplied to the front surface of the peripheral edge portion of the wafer W 2 And (3) gas.
The control device 4 adjusts N 2 The temperature of the gas. By N 2 The temperature of the gas adjusts the etching amount in the wafer W. N (N) 2 The gas includes a warming gas. Through N 2 The supply of the gas heats the wafer W, thereby promoting etching by the SPM processing liquid. In addition, N 2 The gas comprises a cooling gas. Through N 2 The supply of the gas cools the wafer W, thereby suppressing the inflow of the SPM treatment liquidAnd (5) etching the rows.
N 2 The blowout position of the gas can be adjusted based on the target etching amount and the reference etching amount. For example, N 2 The gas blowing position is set so as to blow N to a portion where it is difficult to eliminate a difference between the target etching amount and the reference etching amount corresponding to the radial position of the substrate by adjusting the moving speed of the processing liquid supply nozzle 42 2 And (3) gas.
For example, as shown in fig. 6, when there is a portion in the radial direction of the wafer W where the reference etching amount is locally reduced, N is blown out to the portion where the reference etching amount is locally reduced 2 The gas heats a portion of the wafer W where the reference etching amount is locally reduced. Fig. 6 is a graph showing the reference etching amount and the target etching amount when there is a portion where the reference etching amount is locally reduced in the radial direction of the wafer W.
Thus, even in a portion where it is difficult to eliminate the difference between the target etching amount and the reference etching amount corresponding to the position in the radial direction of the substrate by adjusting the moving speed of the processing liquid supply nozzle 42, the etching amount can be adjusted. Therefore, in the wafer W, the unevenness of the etching amount can be suppressed.
Using the first N 2 The gas supply nozzle 74 supplies N from the back surface of the wafer 2 Gas, and utilize the second N 2 The gas supply nozzle 82 supplies N from the front surface of the wafer 2 The temperature of the wafer W can be adjusted with high accuracy by the gas. Therefore, the unevenness of the etching amount in the wafer W can be suppressed.
The control device 4 may not be the second N 2 The gas supply nozzle 82 supplies N 2 SPM processing is performed pneumatically.
The control device 4 adjusts N based on the rotation speed of the wafer W (an example of a substrate) 2 Flow rate of gas (one example of temperature-regulated gas). When the rotation speed of the wafer W increases, the control device 4, for example, causes the wafer W to rotate from the first N 2 N supplied from the gas supply nozzle 74 2 The flow rate of the gas becomes large. The control device 4 sets N corresponding to a predetermined rotation speed 2 The flow rate of the gas, N of the flow rate to be set 2 From the first N 2 The gas supply nozzle 74 is supplied to the back surface of the wafer W. N (N) 2 The flow rate of the gas increases as the rotation speed of the wafer W increases. That is, when the predetermined rotation speed becomes large, N 2 The flow rate of the gas becomes large. The control device 4 can adjust the rotation speed of the wafer W from the second N 2 N supplied from the gas supply nozzle 82 2 Flow rate of gas.
In addition, since N 2 Since the gas is supplied to the back surface of the wafer W, the back surface of the wafer W can be suppressed from becoming negative pressure, and the wafer W can be suppressed from being deflected.
Returning to fig. 4, the control device 4 executes the cleaning process (step S102). The control device 4 stops the supply of the SPM treatment liquid. Then, the control device 4 supplies the cleaning liquid from the cleaning liquid supply nozzle 52 to the central portion of the wafer W while rotating the wafer W. For example, the control device 4 makes the rotation speed of the wafer W larger than the rotation speed of the wafer W during the SPM process. N (N) 2 The flow rate of the gas increases according to the rotation speed of the wafer W.
The control device 4 executes the drying process (step S103). The control device 4 stops the supply of the cleaning liquid. Then, the control device 4 rotates the wafer W, and throws away the cleaning liquid attached to the wafer W to dry the wafer W. For example, the control device 4 makes the rotation speed of the wafer W larger than the rotation speed of the wafer W during the cleaning process. N (N) 2 The flow rate of the gas increases according to the rotation speed of the wafer W.
The control device 4 executes the send-out process (step S104). Specifically, the control device 4 stops the rotation of the wafer W and stops N 2 And (3) supplying gas. Then, the control device 4 transfers the wafer W held in the holding portion 30 to the substrate transfer device 17, and transfers the wafer W from the chamber 20.
< Effect >
The substrate processing method comprises the following steps: a step of supplying SPM treatment liquid, which is a mixed liquid of sulfuric acid and hydrogen peroxide, to a central portion of the wafer W while the wafer W (an example of a substrate) is held and rotated, and obtaining a reference etching amount corresponding to a radial position of the wafer W when the etching amount of the central portion of the wafer W becomes a target etching amount; and a step of adjusting the moving speed of the supply nozzle for supplying the SPM processing liquid so as to eliminate the difference between the target etching amount and the reference etching amount when the SPM processing liquid is supplied from the peripheral edge portion of the wafer W to the central portion of the wafer W and the wafer W is processed by the SPM processing liquid.
Thus, the etching amount from the center portion of the wafer W to the peripheral portion of the wafer W becomes the target etching amount. Therefore, the substrate processing method can suppress occurrence of uneven etching amount in the radial direction of the wafer W. Thus, the substrate processing method can improve the in-plane uniformity of the wafer W.
The substrate processing method includes supplying N to a wafer W (an example of a substrate) 2 A step of gas (an example of temperature-adjusting gas).
Thus, the substrate processing method can utilize N 2 The gas regulates the amount of etching in the wafer W. Therefore, the substrate processing method can improve the in-plane uniformity of the wafer W.
Supply N 2 The step of adjusting the gas (one example of the temperature adjusting gas) adjusts N based on the rotation speed of the wafer W (one example of the substrate) 2 Flow rate of gas.
Substrate processing method by adjusting N according to the rotation speed of wafer W 2 The flow rate of the gas can set the temperature of the wafer W to a temperature suitable for the process performed by the SPM processing liquid. Therefore, the substrate processing method can improve the accuracy of the SPM processing of the wafer W.
Supply N 2 A step of supplying N from the back surface side of the wafer W (an example of a substrate) 2 And (3) gas.
Thus, the substrate processing method can supply N to the part of the wafer W where the etching amount is locally uneven 2 And (3) gas. Therefore, the substrate processing method can suppress occurrence of local unevenness in etching amount. Thus, the substrate processing method can improve the in-plane uniformity of the wafer W.
Supply N 2 A step of supplying N from the front side of the wafer W (an example of a substrate) 2 And (3) gas.
Thus, the substrate processing method can utilize N 2 The gas regulation ratio is supplied (N 2 Gas) is located at a position closer to the temperature of the SPM processing liquid on the outer side in the radial direction of the wafer W. Thus (2)The substrate processing method can adjust the ratio to be supplied with N 2 The portion of the gas is against the etching amount at the radially outer side of the wafer W. Thus, the substrate processing method can suppress local unevenness of etching amount and improve in-plane uniformity of the wafer W.
N 2 The blowing position of the gas (an example of the temperature-adjusting gas) is adjusted by the adjusting plate 71.
Thus, the substrate processing method can supply N to the part where the etching amount is locally uneven by the adjusting plate 71 2 And (3) gas. Thus, the substrate processing method can improve the in-plane uniformity of the wafer W.
Adjusting N based on the target etching amount and the reference etching amount 2 The blowing position of the gas (an example of the temperature-regulated gas).
Thus, the substrate processing method can adjust N 2 In a state of the gas blow-out position, N is supplied to the wafer W 2 A gas for eliminating a difference between the target etching amount and the reference etching amount. Therefore, the substrate processing method can suppress the uneven etching amount in the wafer W and improve the in-plane uniformity of the wafer W.
N 2 The gas (an example of the temperature-adjusting gas) includes a warming gas. Thus, the substrate processing method is realized by supplying N 2 The gas can increase the etching amount of the portion where the reference etching amount is smaller than the target etching amount, and can improve the in-plane uniformity of the wafer W.
N 2 The gas (an example of the temperature-adjusting gas) includes a cooling gas. Thus, the substrate processing method is realized by supplying N 2 The gas can reduce the etching amount of the portion where the reference etching amount is larger than the target etching amount, and can improve the in-plane uniformity of the wafer W.
The processing unit 16 according to the modification is provided with N as a supply 2 First N of gas 2 The gas supply nozzles 74 may include nozzles for warming gas and nozzles for cooling gas. Namely, the first N 2 Gas supply nozzle 74 and second N 2 At least one of the gas supply nozzles 82 may be provided in plurality.
The processing unit 16 of the modification may not perform N 2 Adjustment of the blow-out position of the gas,and adjusts the moving speed of the treatment liquid supply nozzle 42. The processing unit 16 according to the modification may adjust N without adjusting the moving speed of the processing liquid supply nozzle 42 2 The blowing position of the gas. The processing unit 16 according to the modification may supply the SPM processing liquid from the central position by the processing liquid supply nozzle 42 without moving the processing liquid supply nozzle 42 from the peripheral edge portion of the wafer W to the central portion of the wafer W.
The processing unit 16 of the modification can adjust the movement speed of the SPM process according to the state of the wafer W before processing. For example, the processing unit 16 of the modification measures the state of the film before processing of the wafer W, adjusts the moving speed in the SPM processing based on the measurement result, so as to eliminate the difference between the target etching amount and the reference etching amount.
The processing unit 16 according to the modification can adjust the flow rate of the SPM processing liquid according to the position of the wafer W in the radial direction.
Further, all portions of the embodiments disclosed herein are intended to be illustrative and not limiting. The above embodiments can be implemented in various ways in practice. The above-described embodiments may be omitted, replaced, or modified in various ways without departing from the scope and gist of the present invention.
Description of the reference numerals
1 substrate processing system
4 control device
16 processing unit (substrate processing apparatus)
18 control part
21 substrate holding mechanism
22 treatment fluid supply
30 holding portion (substrate holding portion)
32 drive part (rotating part)
40 treatment liquid supply section
42 treatment liquid supply nozzle (supply nozzle)
45 first support arm
60 first arm driving part (moving part)
70 first N 2 Gas supply unit
71 adjusting plate
71a first plate
71b second plate
74 first N 2 Gas supply nozzle
80 second N 2 Gas supply unit
82 second N 2 Gas supply nozzle
W wafer (substrate).
Claims (13)
1. A method of processing a substrate, comprising:
a step of supplying an SPM treatment liquid to a central portion of the substrate in a state where the substrate is held and rotated, and obtaining a reference etching amount corresponding to a radial position of the substrate when the etching amount of the central portion of the substrate becomes a target etching amount, wherein the SPM treatment liquid is a mixed liquid of sulfuric acid and hydrogen peroxide; and
and a step of adjusting a moving speed of a supply nozzle for supplying the SPM processing liquid so as to eliminate a difference between the target etching amount and the reference etching amount when the SPM processing liquid is supplied from a peripheral edge portion of the substrate to a central portion of the substrate.
2. The substrate processing method according to claim 1, wherein:
comprising the step of supplying a temperature-regulated gas to the substrate.
3. The substrate processing method according to claim 2, wherein:
the step of supplying the temperature-adjusting gas adjusts a flow rate of the temperature-adjusting gas based on a rotation speed of the substrate.
4. A substrate processing method according to claim 2 or 3, wherein:
the step of supplying the temperature-adjusting gas supplies the temperature-adjusting gas from the front side of the substrate.
5. A substrate processing method according to claim 2 or 3, wherein:
the step of supplying the temperature-adjusting gas supplies the temperature-adjusting gas from the back surface side of the substrate.
6. The substrate processing method according to claim 5, wherein:
the blowout position of the temperature-regulated gas is regulated by a regulating plate.
7. The substrate processing method according to claim 5, wherein:
the blowout position of the temperature-adjusting gas is adjusted based on the target etching amount and the reference etching amount.
8. A substrate processing method according to claim 2 or 3, wherein:
the temperature-regulating gas includes a warming gas.
9. A substrate processing method according to claim 2 or 3, wherein:
the temperature-regulating gas includes a cooling gas.
10. A substrate processing apparatus, comprising:
a substrate holding portion for holding a substrate;
a rotation section for rotating the substrate holding section;
a supply nozzle for supplying an SPM treatment liquid to the substrate, wherein the SPM treatment liquid is a mixed liquid of sulfuric acid and hydrogen peroxide;
a moving unit that moves the supply nozzle; and
a control device for controlling the moving part to move the supply nozzle from the peripheral part of the substrate to the central part of the substrate when the SPM treatment liquid is supplied to the substrate,
the control device adjusts the moving speed of the supply nozzle for supplying SPM treatment liquid to eliminate the difference between the target etching amount and the reference etching amount corresponding to the radial position of the substrate,
the reference etching amount is an etching amount corresponding to a radial position of the substrate in a state in which the substrate is held and rotated, and the etching amount of the central portion of the substrate is the target etching amount by supplying the SPM processing liquid to the central portion of the substrate.
11. The substrate processing apparatus according to claim 10, comprising:
a gas supply unit for supplying a temperature-adjusting gas from the back surface side of the substrate; and
and a regulating plate provided on the back surface side of the substrate for regulating the blowing position of the temperature-regulated gas to the substrate.
12. The substrate processing apparatus of claim 11, wherein:
the blowout position of the temperature-adjusting gas in the adjusting plate is adjusted based on the target etching amount and the reference etching amount.
13. The substrate processing apparatus according to claim 11 or 12, wherein:
the control device adjusts the flow rate of the temperature-adjusting gas based on the rotational speed of the substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021133114 | 2021-08-18 | ||
| JP2021-133114 | 2021-08-18 | ||
| PCT/JP2022/029881 WO2023021999A1 (en) | 2021-08-18 | 2022-08-04 | Substrate treatment method and substrate treatment device |
Publications (1)
| Publication Number | Publication Date |
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| CN117795653A true CN117795653A (en) | 2024-03-29 |
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| CN202280055799.7A Pending CN117795653A (en) | 2021-08-18 | 2022-08-04 | Substrate processing method and substrate processing apparatus |
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| JP (1) | JPWO2023021999A1 (en) |
| KR (1) | KR20240039612A (en) |
| CN (1) | CN117795653A (en) |
| WO (1) | WO2023021999A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3886008B2 (en) * | 2002-11-06 | 2007-02-28 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
| JP5202865B2 (en) * | 2007-04-05 | 2013-06-05 | 大日本スクリーン製造株式会社 | Substrate processing method and substrate processing apparatus |
| JP6183705B2 (en) * | 2013-01-15 | 2017-08-23 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method and substrate processing apparatus |
| JP5992379B2 (en) * | 2013-08-23 | 2016-09-14 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
| JP6336365B2 (en) * | 2014-09-18 | 2018-06-06 | 東京エレクトロン株式会社 | Substrate liquid processing equipment |
| JP7241589B2 (en) | 2019-04-04 | 2023-03-17 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
| JP7313208B2 (en) * | 2019-06-26 | 2023-07-24 | 東京エレクトロン株式会社 | Substrate processing method |
-
2022
- 2022-08-04 WO PCT/JP2022/029881 patent/WO2023021999A1/en active Application Filing
- 2022-08-04 KR KR1020247007807A patent/KR20240039612A/en unknown
- 2022-08-04 CN CN202280055799.7A patent/CN117795653A/en active Pending
- 2022-08-04 JP JP2023542322A patent/JPWO2023021999A1/ja active Pending
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| JPWO2023021999A1 (en) | 2023-02-23 |
| WO2023021999A1 (en) | 2023-02-23 |
| KR20240039612A (en) | 2024-03-26 |
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