CN117791298A

CN117791298A - Light emitting device

Info

Publication number: CN117791298A
Application number: CN202311244579.1A
Authority: CN
Inventors: 三浦创一郎
Original assignee: Nichia Corp
Current assignee: Nichia Corp
Priority date: 2022-09-29
Filing date: 2023-09-25
Publication date: 2024-03-29
Also published as: US20240113503A1; JP2024050474A; EP4346032A1

Abstract

The present invention provides a light-emitting device, comprising: a semiconductor laser element; a wavelength conversion member having a wavelength conversion portion and a reflection portion, the wavelength conversion portion having a light incident surface as a side surface and a light emergent surface as an upper surface, the reflection portion being provided on a surface excluding the light incident surface and the light emergent surface and reflecting light from the semiconductor laser element and light subjected to wavelength conversion; and a package for configuring the semiconductor laser element and the wavelength conversion member. The wavelength conversion member is disposed at a position apart from the position at which the semiconductor laser element is disposed in the 1 st direction, and the light-emitting surface has a shape having a 1 st region in which a width in the 2 nd direction perpendicular to the 1 st direction is widened from a side closest to the semiconductor laser element toward the 1 st direction in a plan view perpendicular to the light-emitting surface, and at least 80% or more of the region of the light-entering surface overlaps with a virtual line passing through the light-emitting surface at a point closest to the semiconductor laser element and parallel to the 2 nd direction in a plan view perpendicular to the light-emitting surface.

Description

Light emitting device

Technical Field

The present invention relates to a light emitting device.

Background

Patent document 1 discloses a light-emitting device including: a semiconductor laser element (also referred to as a semiconductor laser); a reflector that reflects light emitted from the semiconductor laser element upward; a light transmitting body through which the light reflected by the reflector passes; and a wavelength conversion member into which light emitted from the light-transmitting body enters.

< citation document >

< patent document 1> (japan) japanese patent application laid-open No. 2019-53130

Disclosure of Invention

< technical problem to be solved >

Provided is a light emitting device which is provided with a semiconductor laser element and a wavelength conversion member and can be manufactured at a low cost.

Alternatively, a light-emitting device including a semiconductor laser element and a wavelength conversion member and having a structure with a small number of components is provided instead of or in combination with the above.

Alternatively, a light-emitting device including a semiconductor laser element and a wavelength conversion member can be provided instead of or in combination with the above, and can be manufactured by relatively simple manufacturing steps.

< technical solution >

The light-emitting device disclosed in one embodiment comprises:

a semiconductor laser element;

a wavelength conversion member having a wavelength conversion portion and a reflection portion,

the wavelength conversion part has

A light incident surface which is a side surface on which light emitted from the semiconductor laser device is incident; and

An upper surface, which is a light-emitting surface from which light having undergone wavelength conversion according to light emitted from the semiconductor laser element is emitted,

the reflection unit is provided on a surface of the wavelength conversion unit excluding the light incident surface and the light emergent surface, and reflects light from the semiconductor laser element that enters the wavelength conversion unit and light that has been wavelength-converted by the wavelength conversion unit; and

A package having an arrangement region for arranging the semiconductor laser element and the wavelength conversion member, and forming an internal space for arranging the semiconductor laser element and the wavelength conversion member,

wherein,

the wavelength conversion member is disposed at a position distant from a position at which the semiconductor laser element is disposed in the 1 st direction,

the light-emitting surface has a shape having a 1 st region in which a width in a 2 nd direction perpendicular to the 1 st direction in a plan view perpendicular to the light-emitting surface is widened from a side closest to the semiconductor laser element toward the 1 st direction,

in a plan view perpendicular to the light-emitting surface, at least 80% or more of the area of the light-entering surface overlaps with a virtual line passing through the light-emitting surface at a point closest to the semiconductor laser element and parallel to the 2 nd direction.

< advantageous effects >

According to at least one of the one or more inventions disclosed in the embodiments, a light emitting device that can solve at least one of the above-described technical problems can be provided.

Drawings

Fig. 1 is an oblique view of a light emitting device of an embodiment.

Fig. 2 is a cross-sectional view along section line II-II of fig. 1.

Fig. 3A is an oblique view of the wavelength conversion member according to the first example of the embodiment, as viewed from above.

Fig. 3B is a six-view of a wavelength conversion member according to the first example of the embodiment.

Fig. 3C is an oblique view when the light-emitting device including the wavelength conversion member according to the first example of the embodiment is viewed from above.

Fig. 3D is a six-view of a light-emitting device including a wavelength conversion member according to the first example of the embodiment.

Fig. 4A is an oblique view when the wavelength conversion member of the second example of the embodiment is viewed from above.

Fig. 4B is a six-view of a wavelength conversion member of a second example of the embodiment.

Fig. 4C is an oblique view when the light-emitting device including the wavelength conversion member according to the second example of the embodiment is viewed from above.

Fig. 4D is a six-view of a light-emitting device including a wavelength conversion member according to a second example of the embodiment.

Fig. 5A is an oblique view when the wavelength conversion member of the third example of the embodiment is viewed from above.

Fig. 5B is a six-view of a wavelength conversion member of a third example of the embodiment.

Fig. 5C is an oblique view when the light-emitting device including the wavelength conversion member according to the third example of the embodiment is viewed from above.

Fig. 5D is a six-view of a light-emitting device including a wavelength conversion member according to a third example of the embodiment.

Fig. 6A is an oblique view when the wavelength conversion member of the fourth example of the embodiment is viewed from above.

Fig. 6B is a six-view of a wavelength conversion member of a fourth example of the embodiment.

Fig. 6C is an oblique view when the light-emitting device including the wavelength conversion member according to the fourth example of the embodiment is viewed from above.

Fig. 6D is a six-view of a light-emitting device including a wavelength conversion member according to a fourth example of the embodiment.

Fig. 7A is an oblique view when the wavelength conversion member of the fifth example of the embodiment is viewed from above.

Fig. 7B is a six-view of a wavelength conversion member of a fifth example of the embodiment.

Fig. 7C is an oblique view when the light-emitting device including the wavelength conversion member according to the fifth example of the embodiment is viewed from above.

Fig. 7D is a six-view of a light-emitting device including a wavelength conversion member according to a fifth example of the embodiment.

Fig. 8A is an oblique view when the wavelength conversion member of the sixth example of the embodiment is viewed from above.

Fig. 8B is a six-view of a wavelength conversion member of a sixth example of the embodiment.

Fig. 8C is an oblique view when the light-emitting device including the wavelength conversion member according to the sixth example of the embodiment is viewed from above.

Fig. 8D is a six-view of a light-emitting device including a wavelength conversion member according to a sixth example of the embodiment.

Fig. 9A is an oblique view when the wavelength conversion member of the seventh example of the embodiment is viewed from above.

Fig. 9B is a six-view of a wavelength converting member of a seventh example of embodiment.

Fig. 9C is an oblique view when the light-emitting device including the wavelength conversion member according to the seventh example of the embodiment is viewed from above.

Fig. 9D is a six-view of a light-emitting device including a wavelength conversion member according to a seventh example of the embodiment.

Reference numerals illustrate:

1 light emitting device

10 Package (package)

14 base

15 frame parts

17 cover part

20 semiconductor laser element

30 base (submounts)

40 wavelength conversion component

41 wavelength conversion section

42 side surfaces

42A upper surface

42B lower surface

43 reflecting portion

Detailed Description

In the present specification and claims, the term "polygon" as used herein includes a shape obtained by processing a corner of a polygon such as a triangle or a quadrangle with a rounded corner, a chamfer, or a rounded corner. The shape of the intermediate portion of the edge after the processing is also called a polygon, not limited to the corner (edge portion). In other words, the shapes after the partial (partial) processing based on the polygons are included in the explanation of "polygons" described in the present specification and claims.

The term "polygonal" is not limited to polygonal, and may be any term that indicates a specific shape such as trapezoid, circle, or concave-convex. In addition, the same is true when referring to the formation of the sides of these shapes. In other words, even if a corner or an intermediate portion of one side is processed, the processed portion is included in the interpretation range of "side". If it is necessary to distinguish between a "polygon" or a "side" that is not subjected to local processing and a shape that is subjected to processing, a word "strict" is added, and is described as, for example, "strict quadrangle".

In the present specification and claims, the description of up and down (above/below), left and right, front and back (front/back), front and back, and the like are merely for describing the relationship of relative position, orientation, direction, and the like, and may not correspond to the relationship when in use.

In the drawings, the directions such as the X direction, the Y direction, and the Z direction may be indicated by arrows. The direction of these arrows is consistent between the various figures of the same embodiment. In addition, directions of arrows denoted by X, Y and Z in the drawings are positive directions, and directions opposite thereto are negative directions. For example, the direction in which the arrow tip marks X is the X direction and is the positive direction. The direction in which the direction is the X direction and the direction in which the direction is the positive direction is referred to as the "positive direction of X" (note that "is equivalent to" ") and the direction opposite thereto is referred to as the" negative direction of X ". In addition, the same is true for both the Y direction and the Z direction.

In the present specification, for example, when components and the like are described, they may be referred to as "parts" or "portions". A "component" refers to an object that is physically considered as a single unit (monomer). An object that is physically considered a single unit may also refer to an object that is considered a component in a manufacturing step. On the other hand, "part" refers to an object that may not be physically considered as a single unit. For example, when a part of one component is partially represented, when a plurality of components are collectively represented as one object, or the like, a "part" may be used.

The written distinction between "component" and "part" does not indicate that the scope of the claims is intended to be limited in interpretation of the doctrine of equivalents. In other words, even if a constituent element described as a "component" exists in the claims, the applicant does not recognize that the constituent element is physically regarded as a single unit as essential to the application of the present invention for only this reason.

In the present specification and claims, when a plurality of certain components are provided and they are distinguished, a mark such as "1 st", "2 nd" may be added to the front of the component to distinguish them. In addition, the object of distinction between the present specification and the claims may also be different from time to time. For this reason, even if the claims describe the components having the same reference numerals as those of the present specification, there is a possibility that the objects specified by the components may not be identical between the present specification and the claims.

For example, in the present specification, there are components to which "1 st", "2 nd", "3 rd" and the like are added for distinction, and when components to which "1 st" and "3 rd" are added in the present specification are described in the claims, the "1 st" and "2 nd" are sometimes added in the claims for distinction from the viewpoint of easy reading. In this case, the constituent elements to which the "1 st" and "2 nd" marks are added in the claims represent the constituent elements to which the "1 st" and "3 rd" marks are added in the present specification, respectively. The application object of the rule is not limited to the constituent elements, and the rule may be applied to other objects appropriately and flexibly.

The following is a description of the manner in which the invention may be practiced. Further, specific modes for carrying out the invention are described with reference to the accompanying drawings. The mode for carrying out the present invention is not limited to these specific modes. In other words, the illustrated embodiments are not the only way to implement the present invention. In addition, the sizes, positional relationships, and the like of the components shown in the drawings may be exaggerated for the sake of easy understanding.

< embodiment >

The light-emitting device 1 of the embodiment will be described. Fig. 1 to 9 are diagrams for describing an exemplary one mode of the light emitting device 1. Fig. 1 is an oblique view of a light emitting device 1. Fig. 2 is a cross-sectional view along section line II-II of fig. 1. Fig. 3A to 3D are diagrams for describing the light emitting device 1 provided with the wavelength conversion member 40A as a first example of the wavelength conversion member 40. Fig. 4A to 4D are diagrams for describing the light emitting device 1 provided with the wavelength conversion member 40B as a second example of the wavelength conversion member 40. Fig. 5A to 5D are diagrams for describing the light emitting device 1 provided with the wavelength conversion member 40C as a third example of the wavelength conversion member 40. Fig. 6A to 6D are diagrams for describing the light emitting device 1 provided with the wavelength conversion member 40D as a fourth example of the wavelength conversion member 40. Fig. 7A to 7D are diagrams for describing the light emitting device 1 provided with the wavelength conversion member 40E as a fifth example of the wavelength conversion member 40. Fig. 8A to 8D are diagrams for describing the light emitting device 1 having the wavelength conversion member 40F as a sixth example of the wavelength conversion member 40. Fig. 9A to 9D are diagrams for describing the light emitting device 1 provided with the wavelength conversion member 40G as a seventh example of the wavelength conversion member 40. The light-emitting device 1 is illustrated in a state in which the light-emitting device 1 can be seen through the surface of the cover 17 having the light-transmitting portion and the light-shielding film, except for fig. 1. In addition, although the six views are different from the size of the real object, the size relationship and the positional relationship between the components are not shown in enlargement. Further, with respect to the six views, the front view is indicated by an arrow F1, the rear view is indicated by an arrow F2, the plan view is indicated by an arrow F3, the bottom view is indicated by an arrow F4, the right view is indicated by an arrow F5, and the left view is indicated by an arrow F6.

The light-emitting device 1 includes a plurality of components. The plurality of components include the package 10, the semiconductor laser element 20, the submount 30, the wavelength conversion member 40, and the reflective film 50. The light-emitting device 1 may further include other components. The light-emitting device 1 may not include some of the plurality of components listed here.

First, each constituent element will be described.

(Package 10)

The package 10 has a base 14, a frame 15, and a lid 17. The package 10 includes, for example, a base member constituting the base 14 and the frame 15, and a cover member constituting the cover 17. The base member may be formed by joining a mounting member constituting the base 14 and a frame member constituting the frame 15. Alternatively, the package 10 may include a base member constituting the base 14 and a cover member constituting the frame 15 and the cover 17.

An enclosed space (closed space) is formed inside the package body 10. The internal space (closed space formed inside) is a closed space (sealed space). The internal space is a space sealed in an airtight state under a predetermined atmosphere.

The package 10 has an arrangement region for arranging (disposing) other constituent elements. The arrangement region is provided on the upper surface of the package body 10. The arrangement regions do not necessarily have to be provided on the same plane, but are regions provided on the same surface side (here, upper surface side).

For example, the main material of the mounting part is a metal or a composite containing a metal. For example, the main material of the mounted part is copper. The main material of the frame member is, for example, ceramic. For example, the main material of the frame member is any one of aluminum nitride, silicon nitride, and aluminum oxide. The main material of the lid member is, for example, any one of quartz, silicon carbide, sapphire, and glass. In the case where the base portion 14 and the frame portion 15 are integrally formed of the same material, the main material of the base member is ceramic.

Here, the main material means a material having the largest weight or volume ratio in the target formation. In the case where a target object is formed of one material, the material is a main material. In other words, a material being the primary material is meant to include the case where the material may be 100% in terms of its percentage.

(semiconductor laser element 20)

The semiconductor laser element 20 has an emission end surface for emitting light. The semiconductor laser element 20 has an upper surface, a lower surface, and a plurality of sides. The side surface of the semiconductor laser element 20 is an emission end surface. The semiconductor laser element 20 has a rectangular outer shape having long sides and short sides in plan view. The shape of the device is not rectangular.

For example, a semiconductor laser device that emits blue light can be used as the semiconductor laser device 20. The blue light herein means light having a light emission peak wavelength in the range of 420nm to 494 nm. The semiconductor laser element 20 may be a semiconductor laser element that emits light of another color. The semiconductor laser device 20 may be a semiconductor laser device capable of emitting light having a light emission peak wavelength in the range of 320nm to 530 nm.

The semiconductor laser element 20 is, for example, a semiconductor laser element including a nitride semiconductor. As the nitride semiconductor, gaN, inGaN, and AlGaN can be used, for example.

Here, light emitted from the semiconductor laser element will be described. Light (laser light) emitted from the semiconductor laser element has diffusivity. The light emitted from the semiconductor laser element forms a far field pattern (Far Field Pattern) (hereinafter referred to as "FFP") having an elliptical shape on a plane parallel to the light emission end surface. FFP refers to the shape and light intensity distribution of the emitted light at a position distant from the emission end face.

Here, light passing through the center of the elliptical shape of the FFP (in other words, light having peak intensity in the light intensity distribution of the FFP) is referred to as light propagating along the optical axis or light passing through the optical axis. In addition, the light intensity distribution of FFP has 1/e relative to the peak intensity value ² Light of intensity of more than a factor of two is referred to as light of the main portion.

The FFP of the light emitted from the semiconductor laser element has an elliptical shape in which the length in the stacking direction in a plane parallel to the light emitting end face is longer than the length in the direction perpendicular to the stacking direction. The lamination direction refers to a lamination direction of a plurality of semiconductor layers including an active layer (active layer) in the semiconductor laser element. The direction perpendicular to the lamination direction may also refer to the surface direction of the semiconductor layer. The longer diameter direction of the elliptical shape of the FFP is also referred to as the fast axis direction of the semiconductor laser element, and the shorter diameter direction is also referred to as the slow axis direction of the semiconductor laser element.

1/e of peak light intensity ² An angle at which light of the double light intensity is diffused based on the light intensity distribution of the FFP is regarded as a semiconductorDiffusion angle of light of the bulk laser element. In terms of the diffusion angle, it is possible to make the diffusion angle dependent on 1/e of the peak light intensity ² The multiplied light intensity may be obtained, for example, from the light intensity which is half of the peak light intensity. In the description of the present specification, when the term "diffusion angle" is merely described, it means 1/e of the peak light intensity ² Light diffusion angle of double light intensity. It can be said that the diffusion angle in the fast axis direction is larger than the diffusion angle in the slow axis direction.

The semiconductor laser device 20 may be, for example, a semiconductor laser device having a diffusion angle in the slow axis direction of 2 degrees to 30 degrees. The semiconductor laser device 20 may be, for example, a semiconductor laser device having a diffusion angle in the fast axis direction of 5 degrees to 120 degrees.

(base 30)

The base 30 has an upper surface and a lower surface. The base 30 is formed in a rectangular parallelepiped shape. The base 30 has a rectangular outer shape having long sides and short sides in plan view. The width of the susceptor 30 in the up-down direction is the smallest. The width of the susceptor 30 in the up-down direction may be 50 μm or more and 1000 μm or less. The shape of the base 30 is not limited to a rectangular parallelepiped. The susceptor 30 may be formed by using silicon nitride, aluminum nitride, or silicon carbide, for example.

(wavelength converting member 40)

The wavelength conversion member 40 has a wavelength conversion portion 41 and a reflection portion 43. In the wavelength conversion member 40, a part of the surface of the wavelength conversion portion 41 is covered with the reflection portion 43, and the other part of the surface is not covered with the reflection portion 43. The outer edge shape of the upper surface of the wavelength conversion member 40 is quadrangular.

The wavelength converting region 41 has an upper surface 42A, a lower surface 42B, and one or more sides 42. In the wavelength conversion member 40, the upper surface 42A of the wavelength conversion portion 41 is not covered with the reflection portion 43. In the wavelength conversion member 40, a part of one or more side surfaces 42 is covered with the reflecting portion 43, and the other part is not covered with the reflecting portion 43. The portion of one or more side surfaces 42 covered by the reflecting portion 43 is in contact with the reflecting portion 43.

The wavelength conversion portion 41 has an incident surface and an exit surface. In the wavelength converting region 41, a region of one or more side surfaces 42 not covered by the reflecting portion 43 may be a light incident surface. In the wavelength converting region 41, a region of the upper surface 42A not covered by the reflecting portion 43 may be a light-emitting surface. The reflection portion 43 is provided on a surface of the wavelength conversion portion 41 excluding the light incident surface and the light emitting surface.

For example, one side surface 42, the entire area of which is not covered by the reflection portion 43, may be a light incident surface. For example, a region of the one side surface 42 of which a part is not covered with the reflecting portion 43, which is not covered with the reflecting portion 43, may be a light incident surface. For example, one region not covered by the reflecting portion 43, which is obtained by selectively combining a plurality of the side surfaces 42, may be used as the light incident surface.

The lower surface 42B of the wavelength converting region 41 is not covered by the reflecting region 43. The lower surface 42B may be covered with the reflecting portion 43.

In the wavelength conversion portion 41, a region of one or more side surfaces 42 located on the opposite side to the light incident surface is covered with the reflection portion 43. In the wavelength conversion portion 41, a region of one or more side surfaces 42 continuous from the light incident surface is covered with the reflection portion 43. In the wavelength converting region 41, all of the one or more side surfaces 42 intersecting the light incident surface are covered with the reflecting region 43. In the wavelength converting region 41, all areas other than the light incident surface in one or more side surfaces 42 are covered with the reflecting portion 43.

The light incident surface and the light emergent surface of the wavelength conversion member 40 are connected to each other. In other words, the light incident surface and the light emitting surface are directly connected to each other on the surface of the wavelength conversion member 40.

In a plan view perpendicular to the light-emitting surface of the wavelength converting region 41, the reflecting portion 43 surrounds all portions of the entire circumference (periphery) of the light-emitting surface except for the connection portion between the light-entering surface and the light-emitting surface. The reflection portion 43 has a side surface that is flush (flush) with the light incident surface of the wavelength conversion portion 41 and extends laterally. The lateral direction here means the same direction as the Y direction in the illustrated light emitting device 1.

The wavelength converting region 41 includes a phosphor (phosphor). Examples of the fluorescent material include cerium-activated Yttrium Aluminum Garnet (YAG), cerium Lutetium Aluminum Garnet (LAG), and europium-activated silicic acidSalt ((Sr, ba) ₂ SiO ₄ ) Alpha race Long Yingguang, beta race Long Yingguang, etc. Among them, YAG phosphor has a preferable heat resistance.

The wavelength conversion portion 41 is preferably formed using an inorganic material that is difficult to decompose by light irradiation as a main material. The main material of the wavelength conversion portion 41 is, for example, ceramic. The main material is not limited to ceramic. The wavelength conversion portion 41 may be formed of a single crystal of a fluorescent substance. Examples of the ceramics include alumina, aluminum nitride, silicon oxide, yttrium oxide, zirconium oxide, and magnesium oxide.

The wavelength conversion portion 41 is formed, for example, such that ceramic is used as a main material. The wavelength conversion portion 41 is, for example, a sintered body. The wavelength conversion portion 41 may be formed by, for example, sintering a light-transmitting material such as a fluorescent material or alumina. For example, ceramics composed of substantially only a fluorescent substance obtained by sintering a powder of the fluorescent substance may be used.

The main material of the reflecting portion 43 is, for example, ceramic. Examples of the ceramics used as the main material include alumina, aluminum nitride, silicon oxide, yttrium oxide, zirconium oxide, and magnesium oxide. The reflecting portion 43 may be formed by using ceramic as a main material, for example. The reflecting portion 43 is, for example, a sintered body.

The wavelength conversion member 40 may be formed by, for example, integrally sintering the wavelength conversion portion 41 and the reflection portion 43. The reflecting portion 43 may not be made of ceramic. For example, the reflecting portion 43 may be formed of a metal film made of a metal as a main material or a dielectric multilayer film formed by laminating dielectric layers into a multilayer film. Examples of the metal used as the main material include silver and aluminum. As the dielectric layer, silicon oxide, niobium oxide, aluminum nitride, titanium oxide, tantalum oxide, or the like can be used.

(reflective film 50)

The reflection film 50 is provided at least in a partial region of the light incident surface of the wavelength conversion member 40. The reflective film 50 is provided at least in an area above a predetermined position in the light incident surface. For example, the predetermined position is located above the midpoint of the width of the light incident surface in the up-down direction. By the region provided with the reflective film 50, the region of the light incident surface where the reflective film 50 is not provided can be isolated (separated) from the light emergent surface.

The reflection film 50 is formed by using a main material different from that of the reflection portion 43 forming the wavelength conversion member 40. The reflective film 50 is formed by using a material different from that used for the reflective portion 43 of the wavelength conversion member 40. For example, the reflective film 50 may be composed of a metal film having a metal as a main material or a dielectric multilayer film formed by laminating dielectric layers into a multilayer film. Examples of the metal used as the main material include silver and aluminum. As the dielectric layer, silicon oxide, niobium oxide, aluminum nitride, titanium oxide, tantalum oxide, or the like can be used.

Next, the light-emitting device 1 including the above-described components will be described.

(light-emitting device 1)

In the light emitting device 1, the semiconductor laser element 20 is disposed in the internal space of the package 10. The semiconductor laser element 20 is disposed on the base 14 of the package 10. The semiconductor laser element 20 is disposed in the disposition region of the package 10.

The semiconductor laser element 20 emits light traveling in the lateral direction from the emission end face. The semiconductor laser element 20 emits light propagating in the 1 st direction from the emission end face. The light emitted from the semiconductor laser element 20 traveling along the optical axis may be light traveling in the 1 st direction. In the illustrated light emitting device, the 1 st direction is the same direction as the positive direction of X.

The semiconductor laser element 20 is mounted on the package 10 via the submount 30. The submount 30 is bonded to the upper surface (arrangement region) of the package 10, and the semiconductor laser element 20 is arranged above the submount 30. By passing through the submount 30, the light emitting point of the semiconductor laser element 20 can be increased.

In the light emitting device 1, the wavelength conversion member 40 is disposed in the internal space of the package 10. The wavelength conversion member 40 is disposed in the disposition region of the package 10. The wavelength conversion member 40 is disposed at a position distant from the position at which the semiconductor laser element 20 is disposed in the 1 st direction. The wavelength conversion member 40 is disposed along a direction in which the light incident surface faces the light emitting end surface of the semiconductor laser element 20. In a plan view, the convex portion of the wavelength conversion member 40 partially overlaps the semiconductor laser element 20.

In a plan view perpendicular to the light-emitting surface of the wavelength converting region 41, at least 80% or more of the light-entering surface of the wavelength converting region 41 overlaps with a virtual line parallel to the 2 nd direction passing through a point of the light-emitting surface closest to the semiconductor laser element 20. The 2 nd direction is a direction perpendicular to the 1 st direction in a plan view perpendicular to the light-emitting surface of the wavelength converting region 41. In the illustrated light emitting device, the 2 nd direction is the same direction as the Y direction.

The semiconductor laser element 20 emits light that propagates from the light-emitting surface to the wavelength conversion member 40. Light emitted from the semiconductor laser element 20 enters the light incident surface. A major portion of light emitted from the semiconductor laser element 20 is contained in the outer edge of the light incident surface. The light of the main portion emitted from the semiconductor laser element 20 is irradiated in a region of the light incident surface where the reflective film 50 is not provided. The wavelength conversion unit 41 emits light having undergone wavelength conversion based on light emitted from the semiconductor laser element 20. The wavelength conversion unit 41 emits light after wavelength conversion from the light-emitting surface.

The light incident surface of the wavelength conversion member 40 has a shape in which the maximum width in the 3 rd direction is larger than the maximum width in the 2 nd direction. The light emitted from the semiconductor laser element 20 has preferably a shape longer in the 3 rd direction than in the 2 nd direction on a plane perpendicular to the 1 st direction. The 2 nd direction and the 3 rd direction are orthogonal to each other. In the illustrated light emitting device, the 3 rd direction is the same direction as the Z direction. For example, the fast axis direction of the FFP of the light emitted from the semiconductor laser element 20 is set to be the same as the 3 rd direction, and the slow axis direction is set to be the same as the 2 nd direction. Accordingly, the light emitted from the light incident surface of the wavelength conversion unit 41 can be suppressed, and the light can be efficiently output from the light emitting surface of the wavelength conversion member 40.

The light incident surface of the wavelength conversion member 40 may have a shape in which the maximum width in the 3 rd direction is smaller than the maximum width in the 2 nd direction. For example, such a shape adjustment can be performed by adjusting the length of the wavelength conversion member 40 in the 3 rd direction or by adjusting the size of the light-emitting surface. In this case, the light of the main portion emitted from the semiconductor laser element 20 preferably has a shape longer in the 2 nd direction than in the 3 rd direction on a plane perpendicular to the 1 st direction. For example, the fast axis direction of the FFP of the light emitted from the semiconductor laser element 20 is set to be the same as the 2 nd direction, and the slow axis direction is set to be the same as the 3 rd direction. Accordingly, the light emitted from the light incident surface of the wavelength conversion unit 41 can be suppressed, and the light can be efficiently output from the light emitting surface of the wavelength conversion member 40.

The light from the semiconductor laser element 20 or the light wavelength-converted by the wavelength conversion unit 41 is emitted from the light emitting surface of the wavelength conversion member 40. Only the wavelength-converted light may be emitted from the light-emitting surface, but white light may be emitted by, for example, emitting blue light emitted from the semiconductor laser element 20 and yellow fluorescent light emitted by the fluorescent material included in the wavelength conversion portion 41 together (in combination).

The light emitted from the light-emitting surface of the wavelength conversion member 40 is emitted to the outside of the package 10 through the package 10. The light emitted from the light-emitting surface of the wavelength conversion member 40 is emitted upward through the cover 17 of the package 10. In this way, by using a wavelength conversion member having a light incident surface on a side surface and a light emergent surface on an upper surface, the number of components can be reduced as compared with a structure composed of a mirror (mirror) and a wavelength conversion member. Further, the manufacturing steps can be made simpler than in the case where the reflection mirror is mounted in the package and the wavelength conversion member is mounted on the package. In addition, the light-emitting device can be manufactured at a lower cost.

Further, since light is emitted laterally from the semiconductor laser element 20, a light-emitting device can be manufactured with a structure in which laser light from the semiconductor laser element 20 is not directly emitted from the lid 17 of the package 10. For this reason, the safety of the light emitting device using the laser can be improved.

The outer edge shape of the upper surface of the reflecting portion 43 has a shape having a 2 nd area with a constant (constant) width in the 2 nd direction from a point closest to the semiconductor laser element 20 toward the 1 st direction in a plan view perpendicular to the upper surface.

The reflection unit 43 reflects the light emitted from the semiconductor laser element 20 and incident on the wavelength conversion unit 41 and the light wavelength-converted by the wavelength conversion unit 41. In the area of the wavelength conversion unit 41 covered by the reflection unit 43, light incident on the reflection unit 43 from the wavelength conversion unit 41 is reflected by the reflection unit 43 and returned to the wavelength conversion unit 41. Accordingly, light can be prevented from being emitted from the light-incident surface or from a surface other than the light-emitting surface, and light can be efficiently emitted from the light-emitting surface.

The reflection film 50 reflects the light emitted from the semiconductor laser element 20 and incident on the wavelength conversion unit 41 and the light wavelength-converted by the wavelength conversion unit 41. In the region covered with the reflective film 50 on the light incident surface of the wavelength conversion region 41, the light incident on the reflective film 50 from the wavelength conversion region 41 is reflected by the reflective film 50 and returns to the wavelength conversion region 41. Accordingly, light emission from the light-incident surface can be suppressed, and light can be efficiently output from the light-emitting surface.

In the light emitting device 1, the length from the upper surface of the semiconductor laser element 20 to the lower surface of the lid portion 17 of the package 10 in the direction perpendicular to the lower surface of the package 10 is smaller than the width of the wavelength conversion member 40. By satisfying such a condition, even when the wavelength conversion member 40 mounted on the package 10 is detached from the package 10, the movement range of the wavelength conversion member 40 can be limited, and thus the safety of the light emitting device 1 can be improved.

The package 10 has a light shielding portion that can shield light having the same wavelength range as the light emitted from the semiconductor laser element 20. The package 10 further has a light-transmitting portion that transmits (transmits) light emitted from the light-emitting surface of the wavelength conversion member 40 and emits the light to the outside. The light shielding portion is provided on the frame portion 15 of the package 10, for example. The light transmitting portion is provided on the lid portion 17 of the package 10, for example.

In the light emitting device 1, the light shielding portion may not be arranged on an extension of an optical path from the emission end face of the semiconductor laser element 20 to the wavelength conversion member 40, from which the light of the main portion emitted from the emission end face is emitted to the uppermost side.

In the light emitting device 1, the light transmitting portion may be arranged on a line segment before the extension line of the optical path extending from the emission end surface of the semiconductor laser element 20 to the uppermost side and entering the wavelength conversion member 40 intersects the light shielding portion.

In the light emitting device 1, a light shielding film surrounding the light transmitting portion is provided on the upper surface or the lower surface of the cover 17 of the package 10. The light shielding film is provided on the upper surface or the lower surface of the cover 17 in the entire region except the light transmitting portion. Accordingly, light can be emitted from a desired region of the package body 10, and light emission from other regions can also be suppressed. In the illustrated light emitting device 1, a light shielding film is provided on the lower surface of the cover 17.

In the light-emitting device 1, the light-emitting surface of the wavelength conversion portion 41 does not overlap the light-shielding film of the cover portion 17 in plan view. In the light-emitting device 1, the upper surface of the reflecting portion 43 partially overlaps the light shielding film of the cover portion 17 in plan view. In the light emitting device 1, the outer edge of the wavelength conversion member 40 partially overlaps the light shielding film of the cover 17 in plan view. In the light-emitting device 1, the entire outer edge of the wavelength conversion member 40 may overlap the light shielding film of the cover 17 in a plan view. Alternatively, in the light-emitting device 1, the entire outer edge of the wavelength conversion member 40 may not overlap the light shielding film of the cover 17 in plan view.

Next, as examples of the wavelength conversion member 40 included in the light emitting device 1, the wavelength conversion members 40A to 40G are given. Further, the light emitting device 1 provided with the wavelength conversion member 40 of each example is described. In the drawings showing oblique views of the wavelength conversion members 40A to 40G, the areas indicated by the broken hatching are areas for providing the reflection film 50.

(light-emitting device 1 provided with wavelength conversion member 40A)

Fig. 3A to 3D are diagrams related to the wavelength converting member 40A. The light-emitting surface of the wavelength conversion portion 41 has a shape of a 1 st region having a width in the 2 nd direction that widens in the 1 st direction from the side closest to the semiconductor laser element 20 in a plan view perpendicular to the light-emitting surface. By adjusting the shape of the light-emitting surface, the distribution of light emitted from the light-emitting device can be adjusted. The light-emitting surface of the wavelength conversion unit 41 has a pentagonal shape. That is, the light-emitting surface of the wavelength conversion portion 41 has a square shape with one corner cut away. The corner is a corner located closest to the semiconductor laser element 20 in four corners, and the side of the corner cut out is parallel to the 2 nd direction. In the illustrated wavelength conversion member 40A, the 1 st direction is the same direction as the positive direction of X.

The maximum width in the 2 nd direction of the light incident surface of the wavelength converting region 41 is the same as the minimum width in the 2 nd direction of the 1 st region of the light exiting surface of the wavelength converting region 41.

The maximum width in the 2 nd direction of the light incident surface of the wavelength converting region 41 is smaller than the maximum width in the 2 nd direction of the 1 st region of the light exiting surface of the wavelength converting region 41.

The width of the light entering surface of the wavelength converting region 41 in the 2 nd direction at the position of the point where the light passing through the optical axis from the semiconductor laser element 20 passes through the light entering surface of the wavelength converting region 41 is the same as the minimum width of the light exiting surface of the wavelength converting region 41 in the 1 st region in the 2 nd direction.

The minimum width in the 2 nd direction of the light incident surface of the wavelength converting region 41 is the same as the minimum width in the 2 nd direction of the 1 st region of the light emergent surface of the wavelength converting region 41. In the wavelength conversion member 40A, the light incident surface can be formed in a shape having a narrower width in the 2 nd direction, that is, the light exit surface can be formed in a shape larger than the light incident surface, so that light can be efficiently emitted from the light exit surface.

In a plan view perpendicular to the light-emitting surface of the wavelength converting region 41, at least 80% or more of the light-entering surface of the wavelength converting region 41 overlaps with the outer edge of the light-emitting surface. In a plan view perpendicular to the light-emitting surface of the wavelength converting region 41, at least 80% or more of the light-entering surface of the wavelength converting region 41 overlaps with the outer edge of the 1 st region. Such a shape can be manufactured, for example, by cutting (sizing) the columnar wavelength conversion member, in which the entire side surface of the wavelength conversion portion is surrounded by the reflection portion, from the lower surface to the upper surface along a line passing through a part of the wavelength conversion portion, and is thus simpler.

The reflection film 50 is not provided in a region below a predetermined position in the light incident surface of the wavelength conversion portion 41. The predetermined position is above the position where the light emitted from the semiconductor laser element 20 is mainly incident on the light incident surface.

(light-emitting device 1 provided with wavelength conversion member 40B)

Fig. 4A to 4D are diagrams related to the wavelength converting member 40B. The light-emitting surface of the wavelength conversion portion 41 has a shape of a 1 st region having a width in the 2 nd direction that widens in the 1 st direction from the side closest to the semiconductor laser element 20 in a plan view perpendicular to the light-emitting surface. By adjusting the shape of the light-emitting surface, the distribution of light emitted from the light-emitting device can be adjusted. The light-emitting surface of the wavelength conversion unit 41 has a quadrangular shape. That is, the light-emitting surface of the wavelength conversion portion 41 has a triangular shape with one corner cut away. The corner is a corner located closest to the semiconductor laser element 20 in three corners, and the side of the corner cut out is parallel to the 2 nd direction. In the illustrated wavelength conversion member 40B, the 1 st direction is the same direction as the positive direction of X.

The minimum width in the 2 nd direction of the light incident surface of the wavelength converting region 41 is the same as the minimum width in the 2 nd direction of the 1 st region of the light emergent surface of the wavelength converting region 41. In the wavelength conversion member 40B, the light incident surface can be formed to have a narrower width in the 2 nd direction, that is, the light exit surface can be formed to be larger than the light incident surface, whereby light can be efficiently emitted from the light exit surface.

In a plan view perpendicular to the light-emitting surface of the wavelength converting region 41, at least 80% or more of the light-entering surface of the wavelength converting region 41 overlaps with the outer edge of the light-emitting surface. In a plan view perpendicular to the light-emitting surface of the wavelength converting region 41, at least 80% or more of the light-entering surface of the wavelength converting region 41 overlaps with the outer edge of the 1 st region. Such a shape can be produced, for example, by cutting a columnar wavelength conversion member, in which the entire side surface of the wavelength conversion portion is covered with the reflection portion, from the lower surface to the upper surface along a line passing through a part of the wavelength conversion portion, and is therefore simpler.

The reflective film 50 is not provided in the area below the predetermined position on the light incident surface of the wavelength conversion section 41. The predetermined position is above the position where the light emitted from the semiconductor laser element 20 is mainly incident on the light incident surface.

(light-emitting device 1 provided with wavelength conversion member 40C)

Fig. 5A to 5D are diagrams related to the wavelength converting member 40C. The light-emitting surface of the wavelength conversion portion 41 has a shape of a 1 st region having a width in the 2 nd direction that widens in the 1 st direction from the side closest to the semiconductor laser element 20 in a plan view perpendicular to the light-emitting surface. By adjusting the shape of the light-emitting surface, the distribution of light emitted from the light-emitting device can be adjusted. The light-emitting surface of the wavelength conversion unit 41 has a quadrangular shape. That is, the light-emitting surface of the wavelength conversion portion 41 has a triangular shape with one corner cut away. The corner is a corner located at a position closest to the semiconductor laser element 20 in three corners, and a side of the corner cut out is parallel to the 2 nd direction. In the illustrated wavelength conversion member 40C, the 1 st direction is the same direction as the positive direction of X.

The maximum width in the 2 nd direction of the light incident surface of the wavelength converting region 41 is larger than the minimum width in the 2 nd direction of the 1 st region of the light emergent surface of the wavelength converting region 41.

The width of the light entering surface of the wavelength converting region 41 in the 2 nd direction at the position of the point where the light passing through the optical axis from the semiconductor laser element 20 passes through the light entering surface of the wavelength converting region 41 is larger than the minimum width of the light exiting surface of the wavelength converting region 41 in the 1 st region in the 2 nd direction.

The minimum width in the 2 nd direction of the light incident surface of the wavelength converting region 41 is the same as the minimum width in the 2 nd direction of the 1 st region of the light emergent surface of the wavelength converting region 41. In the wavelength conversion member 40C, the light incident surface can be formed in a shape having a narrower width in the 2 nd direction, that is, the light exit surface can be formed in a shape larger than the light incident surface, whereby light can be efficiently emitted from the light exit surface. Further, since the lower surface of the wavelength conversion portion 41 is larger than the light exit surface, even if the light exit surface has the same size, the light quantity of the light subjected to the wavelength conversion can be increased as compared with the wavelength conversion portion 41 whose lower surface has the same size as the light exit surface.

The wavelength conversion member 40C can be manufactured by, for example, cutting a columnar wavelength conversion member in which the entire side surface of the wavelength conversion portion is surrounded by the reflection portion from the lower surface to the upper surface along a line passing through a part of the wavelength conversion portion, and is therefore simpler.

(light-emitting device 1 provided with wavelength conversion member 40D)

Fig. 6A to 6D are diagrams related to the wavelength converting member 40D. The light-emitting surface of the wavelength conversion portion 41 has a shape of a 1 st region having a constant (constant) width in the 2 nd direction from the side closest to the semiconductor laser element 20 toward the 1 st direction in a plan view perpendicular to the light-emitting surface. By adjusting the shape of the light-emitting surface, the distribution of light emitted from the light-emitting device can be adjusted. The light-emitting surface of the wavelength conversion unit 41 has a quadrangular shape. In the illustrated wavelength conversion member 40D, the 1 st direction is the same direction as the positive direction of X.

The maximum width in the 2 nd direction of the light incident surface of the wavelength converting region 41 is the same as the maximum width in the 2 nd direction of the 1 st region of the light exiting surface of the wavelength converting region 41.

The minimum width in the 2 nd direction of the light incident surface of the wavelength converting region 41 is the same as the minimum width in the 2 nd direction of the 1 st region of the light emergent surface of the wavelength converting region 41.

In a plan view perpendicular to the light-emitting surface of the wavelength converting region 41, at least 80% or more of the light-entering surface of the wavelength converting region 41 overlaps with the outer edge of the light-emitting surface. In a plan view perpendicular to the light-emitting surface of the wavelength converting region 41, at least 80% or more of the light-entering surface of the wavelength converting region 41 overlaps with the outer edge of the 1 st region. Such a shape can be produced, for example, by cutting a columnar wavelength conversion member, in which the entire side surface of the wavelength conversion portion is surrounded by the reflection portion, from the lower surface to the upper surface along a line passing through a part of the wavelength conversion portion, and is therefore simpler.

The reflective film 50 is also provided in a region below the predetermined position on the light incident surface of the wavelength conversion section 41. The predetermined position is above the position where the light emitted from the semiconductor laser element 20 is mainly incident on the light incident surface. The reflective film 50 is provided in a region of the light incident surface of the wavelength conversion section 41, which is distant from a region in the 2 nd direction in which a main portion of the light emitted from the semiconductor laser element 20 is incident on the light incident surface. Accordingly, not only the size of the wavelength converting region 41 can be increased, but also the amount of light emitted from the light incident surface can be suppressed.

(light-emitting device 1 provided with wavelength conversion member 40E)

Fig. 7A to 7D are diagrams related to the wavelength converting member 40E. The light-emitting surface of the wavelength conversion portion 41 has a shape of a 1 st region having a constant (constant) width in the 2 nd direction from the side closest to the semiconductor laser element 20 toward the 1 st direction in a plan view perpendicular to the light-emitting surface. By adjusting the shape of the light-emitting surface, the distribution of light emitted from the light-emitting device can be adjusted. The light-emitting surface of the wavelength conversion unit 41 has a quadrangular shape. In the illustrated wavelength conversion member 40E, the 1 st direction is the same direction as the positive direction of X.

The width of the light entering surface of the wavelength converting region 41 in the 2 nd direction at the position of the point where the light passing through the optical axis from the semiconductor laser element 20 passes through the light entering surface of the wavelength converting region 41 is smaller than the minimum width of the light exiting surface of the wavelength converting region 41 in the 1 st region in the 2 nd direction.

The minimum width in the 2 nd direction of the light incident surface of the wavelength converting region 41 is smaller than the minimum width in the 2 nd direction of the 1 st region of the light emergent surface of the wavelength converting region 41. The wavelength conversion member 40E may have a shape in which the width of the light incident surface in the 2 nd direction of the region where the light from the semiconductor laser element 20 enters is narrower than the width of the light emitting surface in the 2 nd direction, and thus the light can be efficiently emitted from the light emitting surface.

The reflective film 50 is not provided in a region below the predetermined position on the light incident surface of the wavelength conversion section 41. The predetermined position is above the position where the light emitted from the semiconductor laser element 20 is mainly incident on the light incident surface.

(light-emitting device 1 provided with wavelength conversion member 40F)

Fig. 8A to 8D are diagrams related to the wavelength converting member 40F. The light-emitting surface of the wavelength conversion portion 41 has a shape of a 1 st region having a constant (constant) width in the 2 nd direction from the side closest to the semiconductor laser element 20 toward the 1 st direction in a plan view perpendicular to the light-emitting surface. By adjusting the shape of the light-emitting surface, the distribution of light emitted from the light-emitting device can be adjusted. The light-emitting surface of the wavelength conversion unit 41 has a quadrangular shape. In the illustrated wavelength conversion member 40F, the 1 st direction is the same direction as the positive direction of X.

The maximum width in the 2 nd direction of the light incident surface of the wavelength converting region 41 is larger than the maximum width in the 2 nd direction of the 1 st region of the light exiting surface of the wavelength converting region 41.

The minimum width in the 2 nd direction of the light incident surface of the wavelength converting region 41 is the same as the minimum width in the 2 nd direction of the 1 st region of the light emergent surface of the wavelength converting region 41. In the wavelength conversion member 40F, the light emitting surface (in other words, the area where light is emitted) can be made small. Further, since the lower surface of the wavelength converting region 41 is larger than the light emitting surface, even if the light emitting surface has the same size, the amount of light subjected to wavelength conversion can be increased as compared with the wavelength converting region 41 having the same size of the lower surface and the light emitting surface.

(light-emitting device 1 provided with wavelength conversion member 40G)

Fig. 9A to 9D are diagrams related to the wavelength converting member 40G. The light-emitting surface of the wavelength conversion portion 41 has a shape of a 1 st region in which the width in the 2 nd direction is narrowed from the nearest side to the semiconductor laser element 20 toward the 1 st direction in a plan view perpendicular to the light-emitting surface. By adjusting the shape of the light-emitting surface, the distribution of light emitted from the light-emitting device can be adjusted. The light-emitting surface of the wavelength conversion unit 41 has a quadrangular shape. In the illustrated wavelength conversion member 40G, the 1 st direction is the same direction as the positive direction of X.

The minimum width in the 2 nd direction of the light incident surface of the wavelength converting region 41 is larger than the minimum width in the 2 nd direction of the 1 st region of the light emergent surface of the wavelength converting region 41. In the wavelength conversion member 40G, the reflection portion 43 is configured to easily reflect light in a direction toward the light-emitting surface, and thereby can efficiently emit light from the light-emitting surface.

While the embodiments of the present invention have been described above, the light-emitting device of the present invention is not limited to the light-emitting device of the embodiments. In other words, the present invention is not limited to the external shape and structure of the light emitting device disclosed in each embodiment, but cannot be realized. The application of the present invention does not necessarily have to have all the constituent elements. For example, when a part of the constituent elements of the light-emitting device disclosed in the embodiments is not described in the claims, those skilled in the art can design the constituent elements of the part by substituting, omitting, deforming the shape, changing the material, and the like, and determine the application of the invention described in the claims on the basis of the above.

The following technical solutions are disclosed by what has been described so far in the present specification.

(scheme 1)

A light emitting device is provided with:

a semiconductor laser element;

the wavelength conversion part has

wherein,

the light-emitting surface has a shape of a 1 st region having a width in a 2 nd direction perpendicular to the 1 st direction in a plan view perpendicular to the light-emitting surface, the 1 st region widening from a side closest to the semiconductor laser element toward the 1 st direction,

in a plan view perpendicular to the light-emitting surface, at least 80% or more of the area of the light-entering surface overlaps with a point closest to the semiconductor laser element through the light-emitting surface and with the 2 nd direction parallel virtual line.

(scheme 2)

The light-emitting device according to claim 1, wherein a maximum width of the light incident surface in the 2 nd direction is the same as a minimum width of the light exit surface in the 2 nd direction of the 1 st region.

(scheme 3)

The light-emitting device according to claim 1, wherein a maximum width of the light-incident surface in the 2 nd direction is larger than a minimum width of the light-exiting surface in the 2 nd direction of the 1 st region.

(scheme 4)

The light-emitting device according to claim 3, wherein a maximum width of the light incident surface in the 2 nd direction is smaller than a maximum width of the light exit surface in the 2 nd direction of the 1 st region.

(scheme 5)

The light-emitting device according to any one of claims 1 to 4, further comprising:

and a reflection film which is provided only in an area above a predetermined position in the entire area of the light incident surface and is formed of a main material different from a main material forming the reflection portion, wherein the reflection portion reflects light from the semiconductor laser element and light wavelength-converted by the wavelength conversion portion.

(scheme 6)

The light-emitting device according to any one of claims 1 to 5, wherein the light-incident surface is connected to the light-emitting surface on a surface of the wavelength conversion member.

< industrial applicability >

The light emitting device described in each embodiment mode can be applied to a lighting fixture of a smart lamp, indirect lighting, or the like, a vehicle-mounted head lamp, a head-mounted display, a projector, a display, or the like.

Claims

1. A light emitting device is provided with:

a semiconductor laser element;

the wavelength conversion part has

wherein,

2. The light-emitting device of claim 1, wherein,

the maximum width of the light incident surface in the 2 nd direction is the same as the minimum width of the light emergent surface in the 2 nd direction of the 1 st region.

3. The light-emitting device of claim 1, wherein,

the maximum width of the light incident surface in the 2 nd direction is larger than the minimum width of the light emergent surface in the 2 nd direction of the 1 st area.

4. The light-emitting device according to claim 3, wherein,

the maximum width of the light incident surface in the 2 nd direction is smaller than the maximum width of the light emergent surface in the 2 nd direction of the 1 st area.

5. The light-emitting device according to claim 1, further comprising:

6. The light-emitting device according to any one of claim 1 to 5, wherein,

the light incident surface is connected to the light emergent surface on the surface of the wavelength conversion member.