CN117790611A - Laminated solar cell and method for manufacturing same - Google Patents

Abstract

The application relates to a laminated solar cell, wherein a heterojunction solar cell layer comprises a lateral intrinsic amorphous silicon layer, the thickness of the lateral intrinsic amorphous silicon layer is 1.5-3 times of that of a front intrinsic amorphous silicon layer, the application further provides a manufacturing method of the laminated solar cell, a plurality of silicon substrates are stacked and aligned, the lateral intrinsic amorphous silicon layer is deposited on the lateral surface of the silicon substrate, the structure of the heterojunction solar cell is optimized, the edge effect in the heterojunction solar cell is improved, the performance of the laminated solar cell is more stable, and in addition, etching for electrically isolating lasers from front and back is arranged at the lateral position, so that dead zones are avoided from forming on the front or back of the solar cell.

Description

Laminated solar cell and method for manufacturing same

[ field of technology ]

The present application relates to the field of solar cell technologies, and in particular, to a stacked solar cell.

[ background Art ]

The laminated solar cell is a solar cell formed by combining a plurality of solar cell units in a laminated manner, and materials with different energy gaps can be combined together, so that solar spectrum is utilized to the greatest extent, and photoelectric conversion efficiency is improved. Silicon-based solar cells are devices that utilize silicon wafers stacked with multiple thin films to convert light energy into electrical energy. The solar cell consists of a plurality of film layers, and each layer can absorb light rays with different wavelengths, so that the efficiency of the solar cell is improved. The fabrication process of silicon-based solar cells is complex, requiring the preparation of multiple thin films and then stacking them together. Each film has different energy band structure and light absorption characteristics, and can absorb light rays with different wavelengths. By optimizing the material and thickness between the different layers, light of different wavelengths in the spectrum can be maximally utilized.

Silicon-based solar cells have many advantages. First, higher photoelectric conversion efficiency can be achieved due to the design of the multilayer stack structure thereof. Secondly, the silicon material has abundant resources and relatively low preparation cost. In addition, the silicon-based solar laminated battery has better stability and durability, and can stably operate for a long time under various environmental conditions. However, silicon-based solar cells also present challenges and problems. First, the preparation process is relatively complex, requiring a high technical level and equipment investment. Secondly, the silicon-based solar laminated cell has a large thickness and a heavy weight due to the existence of the multi-layer structure, and is inconvenient to install and use. In addition, the manufacturing cost of the silicon-based solar laminated cell is high due to the complexity of the stacking structure, and the silicon-based solar laminated cell cannot compete with the traditional silicon-based solar cell at present.

The heterojunction solar cell is one of the commonly used cell substrates for manufacturing the silicon-based laminated solar cell, combines the ultra-low temperature production and manufacturing advantages of the thin film solar cell, avoids the traditional high temperature process, simplifies the process flow, and can be realized by only four parts. The stability of the heterojunction solar cell will affect the final effect of the stacked solar cell, so how to optimize the structure of the heterojunction solar cell, and thus improving the performance of the stacked solar cell is an important point of continuous research by those skilled in the art.

[ invention ]

The invention aims to provide a laminated solar cell, which optimizes the structure of heterojunction solar cells in the laminated solar cell, improves the edge effect in the heterojunction solar cells, ensures that the performance of the laminated solar cells is more stable, and also provides a manufacturing method of the laminated solar cell, which can reduce the requirement of laser treatment by combining a new structure and simplify the production process.

The purpose of the application is realized through the following technical scheme: the application provides a laminated solar cell, which comprises a heterojunction solar cell structure layer and a perovskite solar cell structure layer, wherein the perovskite solar cell structure layer is stacked on the heterojunction solar cell layer, the heterojunction solar cell layer comprises a silicon substrate, a front intrinsic amorphous silicon layer is formed on the front surface of the silicon substrate, a back intrinsic amorphous silicon layer is formed on the back surface of the silicon substrate, a front doped amorphous silicon layer is formed on the front intrinsic amorphous silicon layer, and a back doped amorphous silicon layer is formed on the back intrinsic amorphous silicon layer;

the side surface of the silicon substrate comprises a side surface intrinsic amorphous silicon layer, a front surface intrinsic amorphous silicon layer extending from the front surface to the side surface and a back surface intrinsic amorphous silicon layer extending from the back surface to the side surface which are sequentially stacked;

the thickness of the front intrinsic amorphous silicon layer is the same as that of the back intrinsic amorphous silicon layer, and the thickness of the side intrinsic amorphous silicon layer is 1.5-3 times that of the front intrinsic amorphous silicon layer;

wherein an oxide layer is arranged between the lateral intrinsic amorphous silicon layer and the front intrinsic amorphous silicon layer, and the thickness of the oxide layer is 50-500nm.

In one embodiment, the lateral intrinsic amorphous silicon layer extends to the front and back sides of the silicon substrate, respectively.

In one embodiment, the front-side doped amorphous silicon layer further comprises a front-side transparent conductive layer thereon, and the perovskite functional layer is arranged on the front-side transparent conductive layer.

In one embodiment, the back doped amorphous silicon layer further includes a back transparent conductive layer thereon, and the back gate line electrode is included on the back transparent conductive layer.

In one embodiment, the width of the side intrinsic layer extending to the front and back sides is less than the thickness of the side intrinsic amorphous silicon layer on the sides.

The application also provides a manufacturing method of the laminated solar cell, which comprises the following steps:

step S1, cleaning and texturing a silicon substrate;

s2, stacking and aligning a plurality of silicon substrates, and placing dummy wafers at the bottom and the top;

step S3, placing the stacked body into a vapor deposition chamber, and depositing a lateral intrinsic amorphous silicon layer on the lateral surface of the silicon substrate under the condition that pressure is applied to the stacked body;

step S4, after forming the lateral intrinsic amorphous silicon layer, forming a back intrinsic amorphous silicon layer on the back of the silicon substrate, manufacturing a front intrinsic amorphous silicon layer and a front doped amorphous silicon layer on the front of the silicon substrate, and manufacturing a back doped amorphous silicon layer on the back of the silicon substrate;

step S5, carrying out laser etching on the side surface of the silicon substrate;

and S6, forming a transparent conductive layer and a perovskite functional layer on the front surface doped amorphous silicon layer.

In one embodiment, the step S3 and the step S4 further include a step of separating the plurality of silicon substrates stacked together.

In one embodiment, in the step S5, a plurality of silicon substrates are stacked, and the side of the stacked body is subjected to laser etching.

In one embodiment, the doping type of the silicon substrate is N-type, the doping type of the front-side doped amorphous silicon layer is N-type, and the doping concentration of the front-side doped amorphous silicon layer is higher than the doping concentration of the silicon substrate.

In one embodiment, the doping type of the back doped amorphous silicon layer is P-type.

Compared with the prior art, the application has the following beneficial effects:

1. according to the method, the lateral intrinsic amorphous silicon layer is formed before the intrinsic doped amorphous silicon layers on the front side and the back side of the heterojunction solar cell are manufactured, the lateral surface is protected firstly, the excessive generation of the front side and the back side doped amorphous silicon layers can be prevented from being subjected to plating around on the basis of forming the lateral intrinsic amorphous silicon layer, and the operation requirement of the subsequent laser processing step can be reduced;

2. the edge of the intrinsic amorphous silicon layer on the side face is protected, the influence of the laser on the side face to the substrate layer by removing the winding coating layer by etching is avoided, and the solar cell can be processed in batches by adopting a manufacturing mode, so that the steps are added, but the process duration is not obviously increased;

3. the heterojunction solar cell prepared by the method can be well compatible with perovskite functional layers, can realize electrical connection better, and ensures the conversion efficiency and stability of the laminated solar cell while simplifying the process;

4. according to the method, the silicon substrate is stacked, batch processing including deposition of the intrinsic amorphous silicon layer and laser etching can be performed on the side face of the substrate, and etching with laser in front-back electric isolation is arranged at the side face position, so that front face or back face processing of the solar cell is avoided, and dead zones of an irradiation face are reduced.

[ description of the drawings ]

Fig. 1 is a schematic structural view of a stacked solar cell of the present application.

Fig. 2 is a flowchart of a method of manufacturing a stacked solar cell of the present application.

Fig. 3 is a schematic structural diagram of a manufacturing process of the laminated solar cell of the present application.

[ detailed description ] of the invention

In order to make the above objects, features and advantages of the present application more comprehensible, embodiments accompanied with figures are described in detail below. It is to be understood that the specific embodiments described herein are for purposes of illustration only and are not limiting. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present application are shown in the drawings. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.

The terms "comprising" and "having" and any variations thereof herein are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus.

Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the present application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.

Referring to fig. 1, fig. 1 is a schematic structural diagram of a stacked solar cell according to a preferred embodiment of the present application, in which a lateral intrinsic amorphous silicon layer 200 is formed before intrinsic doped amorphous silicon layers on the front and back sides of a heterojunction solar cell are fabricated, and the lateral intrinsic amorphous silicon layer 200 is protected, so that excessive plating of the front and back doped amorphous silicon layers 302 can be prevented. The application provides a laminated solar cell, which comprises a heterojunction solar cell structure layer and a perovskite solar cell structure layer, wherein the perovskite solar cell structure layer is stacked on the heterojunction solar cell layer, the heterojunction solar cell layer comprises a silicon substrate 100, a front intrinsic amorphous silicon layer 401 is formed on the front surface of the silicon substrate 100, a back intrinsic amorphous silicon layer 301 is formed on the back surface of the silicon substrate 100, a front doped amorphous silicon layer 402 is formed on the front intrinsic amorphous silicon layer 401, and a back doped amorphous silicon layer 302 is formed on the back intrinsic amorphous silicon layer 301; the lateral intrinsic amorphous silicon layer 200 is formed before the intrinsic doped amorphous silicon layers on the front and back sides of the heterojunction solar cell are manufactured, the lateral surface is protected first, and compared with the prior art, the intrinsic amorphous silicon layer is formed on the lateral surface first, and the isolation performance of the cell at the edge is improved.

A side intrinsic amorphous silicon layer 200, a front intrinsic amorphous silicon layer 401 extending from the front surface to the side surface, and a back intrinsic amorphous silicon layer 301 extending from the back surface to the side surface, which are sequentially stacked on the side surface of the silicon substrate 100; in the above structure, the front intrinsic amorphous silicon layer 401 and the back intrinsic amorphous silicon layer 301 are respectively prepared in a single-sided manner, and no specific isolation structure is provided in the manufacturing process, so that the silicon wafer is only required to be placed on the carrier plate, and the front intrinsic amorphous silicon layer 401 is allowed to extend to the side surface or even to the back surface during the preparation, and the back intrinsic amorphous silicon layer 301 is allowed to extend to the side surface or even to the front surface during the corresponding preparation of the back intrinsic amorphous silicon layer 301.

The thickness of the front intrinsic amorphous silicon layer 401 is the same as that of the back intrinsic amorphous silicon layer 301, and the thickness of the side intrinsic amorphous silicon layer 200 is 1.5-3 times that of the front intrinsic amorphous silicon layer 401; in order to further protect the front surface, the thicknesses of the front intrinsic amorphous silicon layer 401 and the back intrinsic amorphous silicon layer 301 are generally limited, the lateral intrinsic amorphous silicon layer 200 is appropriately increased, the lateral distance of the substrate can be prolonged from the side, the optimized structure can allow the laser to manufacture an electrical isolation structure from the side, the structure of the heterojunction solar cell can be protected, the formation of the lateral intrinsic amorphous silicon layer 200 can ensure the maintenance of the edge insulation performance, and the diffusion of the dopant into the amorphous silicon layer can be further prevented by forming a plurality of layers of undoped amorphous silicon layers on the side to affect the insulation path.

The thickness of the oxide layer is 50-500nm, the setting of the oxide layer can be performed by adjusting specific parameters such as energy, duration and the like of subsequent laser treatment, only the oxide layer is etched, the oxide layer can further prevent the dopant from diffusing into the substrate, the oxide layer mainly has two functions and can serve as a stopping target layer of laser etching and also can prevent diffusion, in the subsequent treatment step, since the oxide layer is only introduced between the side intrinsic amorphous silicon layer 200 and the front intrinsic amorphous silicon layer 401, the oxide layer on the side can be removed by etching through a solution method, and thus the layer formed further after the oxide layer is removed simultaneously.

Specifically, the lateral intrinsic amorphous silicon layer 200 extends to the front and back surfaces of the silicon substrate 100, respectively. The front intrinsic amorphous silicon layer 401 and the back intrinsic amorphous silicon layer 301 are prepared by adopting a single-sided mode respectively, in the process of manufacturing the side intrinsic amorphous silicon layer 200, a plurality of silicon substrates 100 can be stacked, the stacked body is placed into a vapor deposition chamber, under the condition that pressure is applied to the stacked body, the side intrinsic amorphous silicon layer 200 is deposited on the side surface of the silicon substrate 100, while the silicon substrates 100 are stacked during preparation, and further in the technical scheme, the pressure is applied to the stacked body, but the applied pressure does not eliminate gaps at a microscopic level, and certain coiling plating can be formed on the front surface during the process of forming the side intrinsic amorphous silicon layer 200 on the side surface, so that the side surface of the side intrinsic amorphous silicon layer 200 can be completely wrapped, and as the silicon substrates 100 are stacked, large-area deposition of the side intrinsic amorphous silicon layer 200 can not occur on the front surface, and the preparation and application of other layers of a battery piece are ensured on the basis of maintaining related design.

Specifically, the front-side doped amorphous silicon layer 402 further includes a front-side transparent conductive layer 500 thereon, and the front-side transparent conductive layer 500 includes a perovskite functional layer 600 thereon. The transparent conductive layer and the perovskite functional layer 600 have a common structure, for example, the perovskite functional layer 600 includes an electron transport layer, a perovskite functional layer 600, a hole transport layer, and a top electrode layer, wherein: the substrate may be a substrate commonly used in the art, for example, a glass substrate. A transparent conductive layer 2 may be provided on the substrate, and related materials may be Indium Tin Oxide (ITO), fluorine doped tin oxide (FTO), zinc gallium oxide (GZO), and zinc indium oxide (IZO). Since the side intrinsic amorphous silicon layer 200 is formed at the side, in the edge-formed structure, the side may be relatively higher than the surface, and when the front transparent conductive layer 500 is formed,

specifically, the back-doped amorphous silicon layer 302 further includes a back transparent conductive layer thereon, and the back-doped amorphous silicon layer includes a back gate electrode (not specifically shown in the drawings) thereon. The steps of forming the back transparent conductive layer and forming the back gate line electrode on the back surface can be manufactured by adopting a preparation method and equipment commonly used for heterojunction, and the application is not particularly limited.

Specifically, the width of the lateral intrinsic layer extending to the front and back sides is smaller than the thickness of the lateral intrinsic amorphous silicon layer 200 on the sides. Certain coiling plating is formed on the front surface, so that the side surface of the side intrinsic amorphous silicon layer 200 can be completely wrapped, and large-area deposition of the side surface intrinsic amorphous silicon layer 200 can not occur on the front surface and the back surface due to the fact that the silicon substrate 100 is stacked, the manufacture of other layers on the front surface and the back surface is not affected, and the functions of other layers of the battery piece are guaranteed.

Referring to fig. 2 and 3, fig. 2 is a flowchart of a method for manufacturing a laminated solar cell of the present application, and fig. 3 is a schematic structural diagram of a manufacturing process of a laminated solar cell of the present application, and the present application further provides a method for manufacturing a laminated solar cell, including the following steps:

step S1, cleaning and texturing a silicon substrate 100;

step S2, stacking and aligning a plurality of silicon substrates 100, and placing dummy wafers at the bottom and the top; the placement of the dummy wafer can prevent the formation of an intrinsic amorphous silicon layer on the surface of the silicon substrate 100 and can facilitate the compression of the stack by applying pressure to the stack through the rods.

Step S3, placing the stack into a vapor deposition chamber, and depositing a lateral intrinsic amorphous silicon layer 200 on the lateral surface of the silicon substrate 100 under pressure applied to the stack; the vapor deposition method may be a PECVD method or an LPCVD method, in which the space between the silicon substrates 100 is reduced as much as possible due to the pressure applied by the stack, and it is difficult for the gas to enter between the silicon substrates 100 in a large range, and some gas can enter at the edge, thereby generating a partial formation of an amorphous silicon layer at the edge, and by using this principle, the desired plating around the side is formed, where plating around refers to plating on the surface where the formation of the material layer is not pursued, and does not refer to front to back or back to front in particular.

Step S4, after forming the lateral intrinsic amorphous silicon layer 200, forming a back intrinsic amorphous silicon layer 301 on the back surface of the silicon substrate 100, forming a front intrinsic amorphous silicon layer 401 and a front doped amorphous silicon layer 402 on the front surface of the silicon substrate 100, and forming a back doped amorphous silicon layer 302 on the back surface of the silicon substrate 100;

step S5, performing laser etching on the side surface of the silicon substrate 100;

in step S6, a transparent conductive layer and a perovskite functional layer 600 are formed on the front surface doped amorphous silicon layer 402.

The lateral intrinsic amorphous silicon layer 200 is formed before the intrinsic doped amorphous silicon layers on the front side and the back side of the heterojunction solar cell are manufactured, and the lateral surface is protected first, compared with the prior art, the isolation performance of the cell at the edge can be improved, the front intrinsic amorphous silicon layer 401 and the back intrinsic amorphous silicon layer 301 are respectively manufactured in a single-sided mode, no specific isolation structure is arranged in the manufacturing process, a silicon wafer is only required to be placed on a carrier, the front intrinsic amorphous silicon layer 401 is allowed to extend to the lateral surface even to the back side during manufacturing, and the back intrinsic amorphous silicon layer 301 is allowed to extend to the lateral surface even to the front side during corresponding manufacturing of the back intrinsic amorphous silicon layer 301.

In the preparation process, in order to further protect the front surface, the thicknesses of the front intrinsic amorphous silicon layer 401 and the back intrinsic amorphous silicon layer 301 are generally limited, the lateral intrinsic amorphous silicon layer 200 is appropriately added, so that the lateral distance of the substrate can be prolonged from the lateral surface, the optimized structure can allow the laser to manufacture an electrical isolation structure from the lateral surface, and the structure of the heterojunction solar cell can be protected.

Specifically, a step of separating the plurality of silicon substrates 100 stacked together is further included between the step S3 and the step S4. The front intrinsic amorphous silicon layer 401 and the back intrinsic amorphous silicon layer 301 are prepared separately in a single-sided manner, and no specific isolation structure is provided during the fabrication process, and the silicon substrates 100 are stacked together in the previous step, so that the stacked body is divided into individual pieces at the time of performing the singulation process, and the silicon substrates 100 in the stacked body can be divided by an automated apparatus singulation suction manner.

Specifically, in the step S5, a plurality of silicon substrates 100 are stacked, and the side surfaces of the stacked body are subjected to laser etching. The optimized structure can allow laser to manufacture an electrical isolation structure from the side surface, the structure of the heterojunction solar cell can be protected, an oxide layer can be further arranged between the side surface intrinsic amorphous silicon layer 200 and the front surface intrinsic amorphous silicon layer 401, the oxide layer can be only etched to the oxide layer by adjusting specific parameters such as energy, duration and the like of subsequent laser treatment, the oxide layer can further prevent the dopant from diffusing into the substrate, the edge is protected by the side surface intrinsic amorphous silicon layer, the influence on the substrate layer by removing a plating layer by etching the side surface through laser is avoided, and the solar cell can be processed in batches by adopting a manufacturing mode.

Specifically, the doping type of the silicon substrate 100 is N-type, the doping type of the front-side doped amorphous silicon layer 402 is N-type, and the doping concentration of the front-side doped amorphous silicon layer 402 is higher than the doping concentration of the silicon substrate 100.

Specifically, the doping type of the back doped amorphous silicon layer 302 is P-type. The doping type of the silicon substrate 100 is N-type, the heterojunction solar cell is a back emitter junction, and the perovskite functional layer 600 is formed on the front surface, so that double-sided light entering can be realized, and a double-sided laminated solar cell is manufactured.

Performance test and comparison were performed by comparing the laminated solar cell structure without the intrinsic amorphous silicon layer on the side, and other structures were fabricated by using the same parameters, and also, insulating isolation of laser light was performed on the side of the laminated solar cell without the intrinsic amorphous silicon layer on the side, and Eta (efficiency), voc (open circuit voltage), isc (short circuit current), and FF (fill factor) were measured, respectively. As shown by the result, the efficiency of the laminated solar cell reaches 33.5%, the conversion efficiency of the embodiment is improved by 0.3% based on the comparative example, the main reasons are probably that the surface area is fully utilized, the current loss of the side face is reduced, in addition, the optical loss of the amorphous silicon is reduced, the shading area is reduced, the short-circuit current of the cell is effectively improved, and it is presumed that the laser of the side face can influence the front structure under the condition of no side face intrinsic amorphous silicon layer due to the laser etching of the side face; embodiments provide improved fill factor relative to a stacked solar cell without a lateral intrinsic amorphous silicon layer by improving contact; there is no significant difference in the open circuit voltage of the two cells. In combination, the gains of Isc and FF exceeded the Voc difference, resulting in a 0.3% improvement in efficiency.

From the foregoing, it can be seen that the present application provides a stacked solar cell, wherein the heterojunction solar cell layer comprises a lateral intrinsic amorphous silicon layer, the thickness of the lateral intrinsic amorphous silicon layer is 1.5-3 times that of the front intrinsic amorphous silicon layer, the lateral intrinsic amorphous silicon layer is formed before the intrinsic doped amorphous silicon layers on the front and back surfaces of the heterojunction solar cell are fabricated, and the lateral surface is protected. According to the manufacturing method of the laminated solar cell, the plurality of silicon substrates are stacked, aligned and placed, the lateral intrinsic amorphous silicon layer is deposited on the lateral surface of the silicon substrate, the structure of the heterojunction solar cell is optimized, the edge effect in the heterojunction solar cell is improved, and the performance of the laminated solar cell is more stable. In addition, the etching of the front and back electric isolation of the laser is arranged at the side position, so that dead zones are prevented from being formed on the front or back of the solar cell.

The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.

The foregoing examples represent only a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the invention. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.

Claims (10)

1. A tandem solar cell comprising a heterojunction solar cell structural layer and a perovskite solar cell structural layer, the perovskite solar cell structural layer being stacked on the heterojunction solar cell layer, characterized in that:

the heterojunction solar cell layer comprises a silicon substrate, a front intrinsic amorphous silicon layer is formed on the front surface of the silicon substrate, a back intrinsic amorphous silicon layer is formed on the back surface of the silicon substrate, a front doped amorphous silicon layer is formed on the front intrinsic amorphous silicon layer, and a back doped amorphous silicon layer is formed on the back intrinsic amorphous silicon layer;

the side surface of the silicon substrate comprises a side surface intrinsic amorphous silicon layer, a front surface intrinsic amorphous silicon layer extending from the front surface to the side surface and a back surface intrinsic amorphous silicon layer extending from the back surface to the side surface which are sequentially stacked;

the thickness of the front intrinsic amorphous silicon layer is the same as that of the back intrinsic amorphous silicon layer, and the thickness of the side intrinsic amorphous silicon layer is 1.5-3 times that of the front intrinsic amorphous silicon layer;

wherein an oxide layer is arranged between the lateral intrinsic amorphous silicon layer and the front intrinsic amorphous silicon layer, and the thickness of the oxide layer is 50-500nm.

2. The stacked solar cell of claim 1, wherein the lateral intrinsic amorphous silicon layers extend to the front and back sides of the silicon substrate, respectively.

3. The laminated solar cell of claim 1, wherein the front-side doped amorphous silicon layer further comprises a front-side transparent conductive layer thereon, and wherein the front-side transparent conductive layer comprises a perovskite functional layer thereon.

4. The stacked solar cell of claim 1, wherein the back side doped amorphous silicon layer further comprises a back side transparent conductive layer thereon, and wherein the back side transparent conductive layer comprises a back side gate line electrode thereon.

5. The stacked solar cell of claim 2, wherein the width of the side intrinsic layers extending to the front and back sides is less than the thickness of the side intrinsic amorphous silicon layer on the sides.

6. A method of manufacturing a stacked solar cell, comprising the steps of:

step S1, cleaning and texturing a silicon substrate;

s2, stacking and aligning a plurality of silicon substrates, and placing dummy wafers at the bottom and the top;

step S3, placing the stacked body into a vapor deposition chamber, and depositing a lateral intrinsic amorphous silicon layer on the lateral surface of the silicon substrate under the condition that pressure is applied to the stacked body;

step S4, after forming the lateral intrinsic amorphous silicon layer, forming a back intrinsic amorphous silicon layer on the back of the silicon substrate, manufacturing a front intrinsic amorphous silicon layer and a front doped amorphous silicon layer on the front of the silicon substrate, and manufacturing a back doped amorphous silicon layer on the back of the silicon substrate;

step S5, carrying out laser etching on the side surface of the silicon substrate;

and S6, forming a transparent conductive layer and a perovskite functional layer on the front surface doped amorphous silicon layer.

7. The method of manufacturing a stacked solar cell according to claim 6, further comprising a step of separating the plurality of silicon substrates stacked together between the step S3 and the step S4.

8. The method of manufacturing a stacked solar cell according to claim 6, wherein a plurality of silicon substrates are stacked and a side surface of the stacked body is subjected to laser etching in step S5.

9. The method of claim 6, wherein the silicon substrate has a doping type of N-type, the front-side doped amorphous silicon layer has a doping type of N-type, and the front-side doped amorphous silicon layer has a doping concentration higher than that of the silicon substrate.

10. The method of claim 9, wherein the back-doped amorphous silicon layer is P-type in doping type.