CN117790551A - 功率半导体装置、测量系统和用于确定功率半导体装置的电流的方法 - Google Patents

功率半导体装置、测量系统和用于确定功率半导体装置的电流的方法 Download PDF

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CN117790551A
CN117790551A CN202311265992.6A CN202311265992A CN117790551A CN 117790551 A CN117790551 A CN 117790551A CN 202311265992 A CN202311265992 A CN 202311265992A CN 117790551 A CN117790551 A CN 117790551A
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power semiconductor
pin
current
sensing element
semiconductor device
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I·德恩斯托弗
A·格纳佩尔
D·巴拉绍夫
M·博姆
C·克恩勒
R·施普林格
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Infineon Technologies AG
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Abstract

本公开涉及功率半导体装置、测量系统和用于确定功率半导体装置的电流的方法。提出一种功率半导体装置。功率半导体装置包括半导体主体和半导体主体的第一表面上方的配线区域。功率半导体装置还包括双极功率半导体元件，双极功率半导体元件包括配线区域中的第一负载电极、半导体主体中的有源区域和在半导体主体的第二表面的第二负载电极。功率半导体装置还包括电流感测元件，电流感测元件包括pn或pin结。功率半导体装置还包括光学窗口，光学窗口被配置为允许由双极功率半导体元件的接通电流引起的电磁辐射传递给电流感测元件。

Description

功率半导体装置、测量系统和用于确定功率半导体装置的电 流的方法
技术领域
本公开涉及一种功率半导体装置，特别地涉及一种包括双极半导体元件和感测元件的功率半导体装置。
背景技术
新代功率半导体装置(例如，绝缘栅双极晶体管(IGBT)或晶闸管)的技术开发旨在通过缩小装置几何形状来改进电气装置特性并且减少成本。虽然通过缩小装置几何形状可减少成本，但当增加每单位面积的装置功能时必须满足各种折衷和挑战。例如，由感测元件引起的芯片面积消耗和功率半导体装置的可靠性要求之间的折衷需要设计优化。
因此，存在对改进的功率半导体装置的需要。
发明内容
本公开的示例涉及一种功率半导体装置。功率半导体装置包括半导体主体和半导体主体的第一表面上方的配线区域。功率半导体装置还包括双极功率半导体元件，所述双极功率半导体元件包括配线区域中的第一负载电极、半导体主体中的有源区域和在半导体主体的第二表面的第二负载电极。功率半导体装置还包括电流感测元件，所述电流感测元件包括pn或pin结。功率半导体装置还包括光学窗口，所述光学窗口被配置为允许由双极功率半导体元件的接通电流引起的电磁辐射传递给电流感测元件。
本公开的另一示例涉及一种测量系统。测量系统包括功率半导体装置，所述功率半导体装置包括双极功率半导体元件和电流感测元件。测量系统还包括一种测量装置，所述测量装置被配置为通过在电流感测元件的第一管脚和第二管脚之间强制电压并且测量通过第一管脚和第二管脚的电流来确定双极功率半导体元件的接通电流的测量值(measure)。
本公开的另一示例涉及一种用于确定功率半导体装置的电流的方法，所述功率半导体装置包括双极功率半导体元件和电流感测元件。所述方法包括：通过在电流感测元件的第一管脚和第二管脚之间强制电压并且测量通过第一管脚和第二管脚的电流来确定双极功率半导体元件的接通电流的测量值。
本领域技术人员将会在阅读下面的详细描述时并且在观看附图时意识到另外的特征和优点。
附图说明
包括附图以提供对实施例的进一步理解，并且附图被并入在本说明书中并且构成本说明书的一部分。附图图示功率半导体装置和测量系统的示例，并且与描述一起用于解释示例的原理。在下面的详细描述和权利要求中描述另外的示例。
图1A和1B是用于图示包括双极功率半导体元件和温度/电流感测元件的功率半导体装置的示例的局部剖视图。
图2是用于图示功率半导体装置的温度/电流感测元件的示例的局部剖视图。
图3是图示功率半导体装置的温度/电流感测元件的示例的pn结二极管上的串联连接的示例性电路图。
图4是用于图示示例性测量系统的示意图。
图5是用于图示双极功率半导体元件的电流和温度的测量的温度/电流感测元件的示例性电流与电压曲线图。
具体实施方式
在下面的详细描述中，参照附图，附图形成所述详细描述的一部分并且在附图中作为说明示出功率半导体装置和测量系统的特定示例。要理解，在不脱离本公开的范围的情况下，可使用其它示例，并且可做出结构或逻辑改变。例如，针对一个示例图示或描述的特征能够被结合其它示例使用以产生另一示例。旨在本公开包括这种修改和变化。使用特定语言描述示例，这不应该被解释为限制所附权利要求的范围。附图未按照比例绘制，并且仅用于说明性目的。如果未另外陈述，则在不同附图中由相同标号指定对应元件。
术语“具有”、“含有”、“包含”、“包括”等是开放式，并且所述术语指示存在陈述的结构、元件或特征，但不排除存在另外的元件或特征。冠词“一”、“一个”和“该”旨在包括复数以及单数，除非上下文清楚地另外指示。
针对物理尺寸给出的范围包括边界值。例如，从a到b的参数y的范围读作a≤y≤b。这同样适用于具有一个边界值的范围(比如，“至多”和“至少”)。
术语“在…上”和“在…上方”不要被解释为仅意指“直接在…上”和“直接在…上方”。相反地，如果一个元件位于“另一元件上”或“另一元件上方”(例如，一层“在另一层上”或“在另一层上方”或者“在基底上”或“在基底上方”)，则另一部件(例如，另一层)可位于所述两个元件之间(例如，如果一层“在基底上”或“在基底上方”，则另一层可位于所述层和所述基底之间)。
功率半导体装置的示例可包括半导体主体和半导体主体的第一表面上方的配线区域。功率半导体装置还可包括双极功率半导体元件，所述双极功率半导体元件包括配线区域中的第一负载电极、半导体主体中的有源区域和在半导体主体的第二表面的第二负载电极。功率半导体装置还可包括电流感测元件，所述电流感测元件包括pn或pin结。功率半导体装置还可包括光学窗口，所述光学窗口被配置为允许由双极功率半导体元件的接通电流引起的电磁辐射传递给电流感测元件。
功率半导体装置可以是例如集成电路或分立半导体装置或半导体模块。功率半导体装置可以是或者可包括双极功率半导体元件，例如在第一表面和第二表面之间具有负载电流流动的垂直双极功率半导体元件。功率半导体装置可被用于汽车、工业功率控制、功率管理、感测解决方案和物联网应用中的安全中。双极功率半导体元件可以是或者可包括功率半导体二极管或功率半导体IGBT(绝缘栅双极晶体管)或反向导通(RC)IGBT或功率晶闸管(例如，可控硅整流器，SCR)或功率双极晶体管。功率半导体装置可被配置为传导超过1A或超过10A或甚至超过30A的电流。为了实现期望的最大负载电流，可通过多个并联连接的基元来设计双极功率半导体元件。并联连接的基元可例如是按照条或条段的形状形成的双极晶体管基元或晶闸管基元或IGBT基元或二极管基元。当然，装置基元还能够具有任何其它形状，例如圆形、椭圆形、多边形(诸如，八面体)。功率半导体装置还可被配置为阻断负载电极之间(例如，IGBT或双极晶体管的发射极和集电极之间，或者二极管或晶闸管的阴极和阳极之间)的处于数百或高达数千伏特的范围中的电压，例如30V、40V、60V、80V、100V、400V、650V、1.2kV、1.7kV、3.3kV、4.5kV、5.5kV、6kV、6.5kV、10kV。例如，阻断电压可对应于在功率半导体装置的数据表中指定的电压等级。功率半导体装置还可以是或还可包括侧向半导体装置，例如沿着例如平行于第一表面的侧向方向具有负载电流流动的侧向功率半导体装置。
例如，使用混合技术，功率半导体装置可被整体地实现。例如，在以上应用领域之一中，功率半导体装置可以是分立BCD或智能功率芯片的一部分。
半导体主体可包括来自以下的半导体材料或由来自以下的半导体材料组成：IV族元素半导体、IV-IV化合物半导体材料、III-V化合物半导体材料或II-VI化合物半导体材料。来自IV族元素半导体的半导体材料的示例包括例如(inter alia)硅(Si)和锗(Ge)。IV-IV化合物半导体材料的示例包括例如碳化硅(SiC)和硅锗(SiGe)。III-V化合物半导体材料的示例包括例如砷化镓(GaAs)、氮化镓(GaN)、磷化镓(GaP)、磷化铟(InP)、氮化铟镓(InGaN)和砷化铟镓(InGaAs)。II-VI化合物半导体材料的示例包括例如碲化镉(CdTe)、碲化镉汞(CdHgTe)和碲化镉镁(CdMgTe)。例如，半导体主体可以是磁直拉法、MCZ或浮区(FZ)或外延沉积的硅半导体主体。
例如，第一表面可以是半导体主体的前表面或顶表面，并且第二表面可以是半导体主体的背面或后表面。例如，半导体主体可经由第二表面附着到引线框架。
半导体主体的第一表面上方的配线区域可包括一个或超过一个(例如，两个、三个、四个或甚至更多个)配线层级。每个配线层级可由单一导电层或一堆导电层形成，所述导电层例如(一个或多个)金属层和/或(一个或多个)高度掺杂半导体层(例如，高度掺杂多晶层)。例如，配线层级可包括Cu、Au、AlCu、Ag或其合金中的至少一种。例如，配线层级可被按照平版印刷方式图案化。在堆叠的配线层级之间，可形成夹层介电结构。开口可被形成在夹层介电结构中用于以按照电气方式将不同配线层互连。例如，(一个或多个)接触插头或者(一个或多个)接触过孔或者(一个或多个)接触线可被形成在夹层介电结构中的开口中用于以按照电气方式将不同配线层级的部分(例如，金属线或接触区域)彼此连接。
例如，第一负载电极可由配线层级中的至少一个形成。
配线区域可被布置在功率半导体装置的有源区域上方。有源区域可以是半导体主体中的装置元件(例如，垂直功率半导体装置的双极晶体管基元阵列或晶闸管基元阵列或IGBT基元阵列或二极管基元阵列)经由第一表面按照电气方式连接到配线区域的区域。除了有源区域之外，功率半导体装置还可包括至少部分地包围有源区域的边缘终止区域。边缘终止区域可包括终止结构。在功率半导体装置的阻断模式下或在功率半导体装置的反向偏置模式下，有源区域和无场区之间的阻断电压横跨终止结构沿侧向下降。与有源区域相比，终止结构可具有更高或稍微更低的电压阻断能力。例如，终止结构可包括具有或不具有侧向掺杂变化(VLD)的结终止扩展(JTE)、一个或多个沿侧向分离的保护环或者其任何组合。例如，酰亚胺钝化可被布置在边缘终止和/或配线区域上方。
例如，电流感测元件可以是被用于感测功率半导体元件的温度并且用于感测功率半导体元件的电流的元件。通过感测pn或pin结的电流或电压，可实现这种双重功能。例如，光电流可被感测，其中通过在电流感测元件中吸收电磁辐射并且由pn或pin结的内置电场或者由偏置的pn或pin结分离产生的电荷载流子，产生光电流。感测到的光电流可被用于基于由双极功率半导体元件的接通电流引起并且通过光学窗口传递给电流感测元件的电磁辐射来确定双极功率半导体元件的接通电流。例如，电流感测元件还可被配置为感测或用于感测双极功率半导体元件的温度。在这种情况下，电流感测元件也可被称为温度/电流感测元件。
通过电流感测元件的pn或pin结，功率半导体装置允许感测双极功率半导体元件的温度和接通电流二者。通过将温度和电流感测功能组合到单个元件中，这可允许减少由感测元件引起的芯片面积消耗。由此，由感测元件引起的芯片面积消耗和功率半导体装置的可靠性要求之间的折衷可被改进。
例如，光学窗口可包括半导体材料和介电材料。由双极功率半导体元件的接通电流(例如，由电子空穴对的辐射复合过程)引起的电磁辐射可具有比半导体主体的能带隙小的能量。光学窗口可因此包括沿侧向从功率半导体元件延伸到电流感测元件的半导体主体的部分。除了双极功率半导体元件(即，电磁辐射的产生的位置)和电流感测元件(即，电磁辐射的检测的位置)之间的直接路径之外，电磁辐射还可在双极功率半导体元件到电流感测元件之间的路径上被反射一次或多次。电磁辐射的反射可由反射元件(例如，第一表面和/或第二表面上方的配线区域中的(一个或多个)金属层)引起。
电流感测元件可被布置在第一表面上方的配线区域中。例如，电流感测元件可被形成在第一表面上方的半导体层中。例如，半导体层可以是掺杂多晶硅半导体层。例如，多晶半导体层可以是用作形成为IGBT的双极功率半导体元件的栅电极的多晶层。
例如，电流感测元件的pn或pin结可以是单晶或多晶或纳晶硅pn或pin结。
例如，电流感测元件的表面可被纹理化。例如，纹理表面可以是硅半导体主体(例如，晶片)的(100)取向第一表面。例如，电流感测元件可被形成在配线区域中的纹理第一表面上方，或者可被形成在纹理第一表面下方的半导体主体中。另外，第二表面也可被纹理化，第二表面也可以是硅半导体主体的(100)取向表面。通过硅的各向异性蚀刻，例如通过强含水碱性介质(诸如，KOH-、NaOH-或TMAH-溶液)，可形成纹理。对于(110)取向Si晶片，碱性蚀刻导致形成具有{111}表面的基于正方形的金字塔。
例如，功率半导体装置还可包括反射层，所述反射层被配置为将电磁辐射反射回到光学窗口中。例如，反射层可以是半导体主体的第一表面上方的配线区域的部分。例如，反射层可由例如被布置为最靠近第一表面的配线区域的金属形成。
例如，功率半导体装置还可包括电流感测元件中的深能级杂质。这可允许多级吸收，并且可因此允许改进由双极功率半导体元件的接通电流引起的电磁辐射的检测灵敏度。
例如，半导体主体可以是硅半导体主体，并且深能级杂质可包括硒、硫、铊、锌中的至少一种。
例如，电流感测元件可包括串联或并联连接的多个pn或pin结。所述多个pn或pin结可随后沿着垂直方向和/或沿着侧向方向被布置。
例如，功率半导体装置还可包括在电流感测元件的表面上的表面复合减少结构。例如，表面复合减少结构可在与电流感测元件的半导体材料的界面允许减少的数量的复合中心。例如，表面复合减少结构可包括一个或多个薄介电层，例如SiO2、SiN或Al2O3。例如，表面复合减少结构的厚度可处于从1nm到100nm的范围中。
例如，pn或pin结中的等电位平面主要平行于垂直方向。这可允许减少由电流感测元件引起的芯片面积消耗，并且可因此有助于改进由感测元件引起的芯片面积消耗和功率半导体装置的可靠性要求之间的折衷。
例如，pn或pin结的p掺杂区的第一末端表面和pn或pin结的n掺杂区的第二末端表面之间的最小侧向距离可处于p掺杂区或n掺杂区中的至少一个掺杂区的扩散长度的0.5到3倍的范围中。这可允许使电流感测元件的侧向/垂直尺寸适配于电流感测元件的电流感测功能，并且允许减少由电流感测元件引起的芯片面积消耗。
关于以上针对功率半导体装置描述的特征的结构或功能或技术益处的细节同样地适用于本文中描述的示例性方法和测量系统。处理半导体主体可包括与结合提出的概念提及的一个或多个方面或者以上或以下描述的一个或多个示例对应的一个或多个可选的另外的特征。
测量系统的示例可包括一种功率半导体装置，所述功率半导体装置包括双极功率半导体元件和电流感测元件。例如，可根据本文中描述的任何示例配置所述功率半导体装置。测量系统还可包括测量装置，所述测量装置被配置为：通过在电流感测元件的第一管脚和第二管脚之间强制电压并且测量通过第一管脚和第二管脚的电流(例如，光电流)来确定双极功率半导体元件的接通电流的测量值。双极功率半导体元件的接通电流的测量值可以是允许识别接通电流的通过测量而确定的任何参数。
例如，测量装置还可被配置为：通过强制电流通过电流感测元件的第一管脚和第二管脚并且测量第一管脚和第二管脚之间的电压，或者通过在电流感测元件的第一管脚和第二管脚之间强制电压并且测量通过第一管脚和第二管脚的电流，来确定双极功率半导体元件的温度的测量值。双极功率半导体元件的温度的测量值可以是允许识别双极功率半导体元件的温度的通过测量而确定的任何参数。在电流感测元件还被配置为感测或用于感测温度的情况下，它也可被称为温度/电流感测元件。优选地，电流感测元件的同一pn或pin结可被用于测量温度的测量值和接通电流的测量值二者。
本公开的示例涉及一种用于确定功率半导体装置的电流的方法，所述功率半导体装置包括双极功率半导体元件和电流感测元件感测元件。所述方法可包括：通过在电流感测元件的第一管脚和第二管脚之间强制电压并且测量通过第一管脚和第二管脚的电流(例如，光电流)来确定双极功率半导体元件的接通电流的测量值。在电流感测元件还被配置为感测或用于感测温度的情况下，它也可被称为温度/电流感测元件。优选地，电流感测元件的同一pn或pin结可被用于测量温度的测量值和接通电流的测量值二者。
例如，所述方法还可包括：通过强制电流通过电流感测元件的第一管脚和第二管脚并且测量第一管脚和第二管脚之间的电压，或者通过在电流感测元件的第一管脚和第二管脚之间强制电压并且测量通过第一管脚和第二管脚的电流，来确定双极功率半导体元件的温度的测量值。
例如，可基于电流感测元件的测量电流和校准数据集来确定双极功率半导体元件的接通电流。例如，作为功率半导体装置的数据表的一部分，或者附随功率半导体装置的数据表，可提供校准数据集。
结合以上或以下描述的示例提及更多细节和方面。描述和附图仅图示本公开的原理。另外，本文中叙述的所有示例主要旨在明确地仅用于说明性目的以帮助阅读者理解由(一个或多个)发明人为了促进本领域而贡献的本公开的原理和构思。本文中叙述本公开的原理、方面和示例以及本公开的特定示例的所有陈述旨在包括其等同物。
要理解，在说明书或权利要求中公开的多个动作、过程、操作、步骤或功能的公开不可被解释为落在特定次序内，除非例如由于技术原因例如通过比如“此后”的表述明确地或隐含地另外陈述。因此，多个动作或功能的公开不会将这些限制于特定次序，除非这种动作或功能由于技术原因是不可互换的。另外，在一些示例中，单个动作、功能、过程、操作或步骤可分别包括多个子动作、子功能、子过程、子操作或子步骤，或者可被分解为多个子动作、子功能、子过程、子操作或子步骤。除非明确地排除，否则这种子动作可被包括并且是这个单个动作的公开的部分。
图1A是用于图示示例性功率半导体装置100的示意性局部剖视图。功率半导体装置100包括半导体主体102和半导体主体102的第一表面106(例如，顶表面)上方的配线区域104。
功率半导体装置100包括双极功率半导体元件108，双极功率半导体元件108包括配线区域104中的第一负载电极L1、半导体主体102中的有源区域和在半导体主体102的第二表面109的第二负载电极L2。第二表面109和第一表面106沿着垂直方向y彼此相对。
功率半导体装置100还包括温度/电流感测元件110。在一些示例中，温度/电流感测元件110至少部分地被形成在半导体主体102中。温度/电流感测元件110也可至少部分地被形成在第一表面106上方的配线区域104中。在一些示例中，温度/电流感测元件110的pn或pin结被形成在半导体主体102中。在一些其它示例中，温度/电流感测元件110的pn或pin结被形成在半导体主体102的第一表面106上方的配线区域104中。在一些示例中，温度/电流感测元件110包括按照电气方式串联和/或并联连接的多个pn或pin结。所述多个pn或pin结可被形成在半导体主体102中，或形成在配线区域104中，或形成在配线区域104和半导体主体102二者中。
图1B是用于图示由双极功率半导体元件108的接通电流引起并且传递给温度/电流感测元件110以用于接通电流感测的电磁辐射的示意性局部剖视图。
路径R1是从双极功率半导体元件108通过光学窗口114到温度/电流感测元件104的直接路径的一个示例。路径R2是从双极功率半导体元件108通过光学窗口114到温度/电流感测元件110的间接路径的一个示例。间接路径R2基于由第一表面104上方和第二表面109上方的反射元件(例如，(一个或多个)金属层)引起的电磁辐射的反射。光学窗口114包括：半导体材料1021，例如半导体主体102的半导体材料；以及介电材料116，例如夹层电介质，诸如硅的局部氧化(LOCOS)或浅沟槽隔离(STI)或平面电介质，布置在温度/电流感测元件110和半导体主体102之间。介电材料116可包括氧化硅。光学窗口114的介电材料116(例如，氧化硅)可表现出至少10％或至少20％的传递性。
图2的示意性局部剖视图图示布置在半导体主体102的第一表面106上方的配线区域104中的双极功率半导体元件108的一个示例。双极功率半导体元件108包括n+掺杂区120和p+掺杂区122之间的pn结118。pn结118中的等电位平面主要平行于垂直方向y。
图3的示意性电路图图示通过在感测管脚P1、P2之间串联连接四个pn结二极管1101而形成的温度/电流感测元件110的一个示例。保护二极管124与pn结二极管1101并联连接。pn结二极管1101的数量和互连类型(串联或并联)可被改变，并且适配于特定要求。
图4的示意图示例性地图示测量系统130。测量系统130包括功率半导体装置100。功率半导体装置100包括功率IGBT 1001作为双极功率半导体元件108的示例，并且还包括温度/电流感测元件110。测量系统130还包括测量装置132，测量装置132被配置为通过在温度/电流感测元件110的第一管脚P1和第二管脚P2之间强制电压(例如，0V)并且感测通过第一管脚P1和第二管脚P2的电流I来确定功率IGBT 1001的接通电流Ion的测量值。测量装置132或另一测量装置包括子单元1321(例如，栅极驱动器)、1322(例如，电压表)、1323(例如，电流源)以用于测试IGBT 1001。子单元1311、1322、1323可被用于校准温度/电流感测元件110。例如，通过将栅极电压(例如，15V)施加于IGBT 1001的栅极G并且强制接通电流Ion通过IGBT 1001的发射极E和集电极C，由接通电流Ion引起的电磁辐射被传递给双极功率半导体元件108并且被测量为与特定接通电流Ion相关的光电流Iph。通过改变Ion，能够实现使感测到的光电流Iph和IGBT 1001的接通状态电流Ion相联系的校准数据。
测量装置132可被配置为通过强制优选地与光电流Iph相反的方向的电流(例如，至少1μA)通过温度/电流感测元件110的第一管脚P1和第二管脚P2并且感测第一管脚P1和第二管脚P2之间的所得到的电压V来确定半导体主体102中的温度T、功率IGBT 1001的Ion的测量值。光电流Iph可例如处于从1μA到1mA的范围中。
图5的示意性曲线图图示温度/电流感测元件110的感测pn或pin结的电流I与电压V曲线。对于固定偏置电流Iref，感测到的电压V1…Vn与温度/电流感测元件110的温度T1…Tn关联。对于固定偏置电流Iref，温度/电流感测元件110(代表例如图4中的IGBT 1001)的半导体主体102中的温度T的增加导致感测到的电压的增加。如参照图4所述，双极功率半导体元件(例如，图4中的IGBT 1001)中的接通电流Ion引起电磁辐射的发射，所述电磁辐射由温度/电流感测元件110感测作为光电流Iph。对于参考电压(例如，0V)，接通电流Ion的增加导致感测到的光电流Iph的增加。
通常，电流I与电压V曲线的至少任意两对值可被测量以确定接通电流Ion的测量值和温度的测量值二者。通过这两对值，电流I与电压V曲线可被充分地表示以获得接通电流Ion的测量值和温度的测量值二者。在数学上，通过所述任意两对值，电流I与电压V曲线可被明确定义。通过在温度/电流感测元件110的第一管脚P1和第二管脚P2之间强制电压并且感测通过第一管脚P1和第二管脚P2的电流I或者强制电流通过温度/电流感测元件110的第一管脚P1和第二管脚P2并且感测第一管脚P1和第二管脚P2之间的电压I，所述两对值中的每一对可被确定。当然，任意超过两对值可被确定以提供更好的可靠性和/或准确性。
例如，半导体主体102中的温度T或接通电流Ion可由测量装置132计算或确定。测量装置132可包括：微处理器、数字信号处理器、IC、FPGA等，被配置为计算或确定温度T和/或接通电流和/或温度T和/或接通电流的相应测量值。
与以前详述的示例和附图中的一个或多个一起提及和描述的方面和特征也可与其它示例中的一个或多个组合以便替换其它示例的相同特征，或者以便另外将所述特征引入到其它示例。

Claims (22)

1.一种功率半导体装置(100)，包括：
半导体主体(102)和所述半导体主体(102)的第一表面(106)上方的配线区域(104)；
双极功率半导体元件(108)，包括所述配线区域(104)中的第一负载电极(L1)、所述半导体主体(102)中的有源区域和在所述半导体主体(102)的第二表面(109)的第二负载电极(L2)；
电流感测元件(110)，包括pn或pin结(118)；和
光学窗口(114)，被配置为允许由所述双极功率半导体元件(108)的接通电流(Ion)引起的电磁辐射传递给所述电流感测元件(110)。
2.如前面权利要求所述的功率半导体装置(100)，其中所述光学窗口(114)包括半导体材料(1021)和介电材料(116)。
3.如前面权利要求中任一项所述的功率半导体装置(100)，其中所述电流感测元件(110)被布置在所述配线区域(104)中。
4.如前面权利要求中任一项所述的功率半导体装置(100)，其中所述pn或pin结(118)是单晶或多晶或纳晶硅pn或pin结。
5.如前面权利要求中任一项所述的功率半导体装置(100)，其中所述电流感测元件(110)的表面被纹理化。
6.如前面权利要求中任一项所述的功率半导体装置(100)，还包括：反射层，被配置为将所述电磁辐射反射回到所述光学窗口(114)中。
7.如前面权利要求中任一项所述的功率半导体装置(100)，还包括所述电流感测元件(108)中的深能级杂质。
8.如前面权利要求所述的功率半导体装置(100)，其中所述半导体主体(102)是硅半导体主体，并且所述深能级杂质包括硒、硫、铊、锌中的至少一种。
9.如前面权利要求中任一项所述的功率半导体装置(100)，其中所述电流感测元件(110)包括串联或并联连接的多个pn或pin结(118)。
10.如前面权利要求中任一项所述的功率半导体装置(100)，还包括在所述电流感测元件(110)的表面上的表面复合减少结构。
11.如前面权利要求中任一项所述的功率半导体装置(100)，其中所述pn或pin结(118)中的等电位平面主要平行于垂直方向(y)。
12.如前面权利要求中任一项所述的功率半导体装置(100)，其中所述pn或pin结(118)的p掺杂区(122)的第一末端表面和所述pn或pin结(118)的n掺杂区(120)的第二末端表面之间的最小侧向距离处于所述p掺杂区(122)或所述或n掺杂区(120)中的至少一个掺杂区的扩散长度的0.5到3倍的范围中。
13.如前面权利要求中任一项所述的功率半导体装置(100)，其中所述电流感测元件(110)被热耦合到所述半导体主体。
14.一种测量系统(130)，包括：
功率半导体装置(100)，包括双极功率半导体元件(108)和电流感测元件(110)；和
测量装置(132)，被配置为：
通过在所述电流感测元件(110)的第一管脚(P1)和第二管脚(P2)之间强制电压(V)并且测量通过所述第一管脚(P1)和所述第二管脚(P2)的电流(Iph)来确定所述双极功率半导体元件(108)的接通电流(Ion)的测量值。
15.如前面权利要求所述的测量系统(130)，其中所述测量装置(132)还被配置为：
通过强制电流(I)通过所述电流感测元件(110)的所述第一管脚(P1)和所述第二管脚(P2)并且测量所述第一管脚(P1)和所述第二管脚(P2)之间的电压(V)，或者通过在所述电流感测元件(110)的所述第一管脚(P1)和所述第二管脚(P2)之间强制电压(V)并且测量通过所述第一管脚(P1)和所述第二管脚(P2)的电流(I)，来确定所述双极功率半导体元件(108)的温度的测量值。
16.如前面权利要求中任一项所述的测量系统(130)，其中所述电流感测元件(110)被热耦合到所述半导体主体。
17.如前面权利要求中任一项所述的测量系统(130)，其中所述电流感测元件(110)被布置在所述配线区域(104)中。
18.一种用于确定功率半导体装置(100)的电流的方法，所述功率半导体装置(100)包括双极功率半导体元件(108)和电流感测元件(110)，所述方法包括：
通过在所述电流感测元件(110)的第一管脚(P1)和第二管脚(P2)之间强制电压(V)并且测量通过所述第一管脚(P1)和所述第二管脚(P2)的电流(Iph)来确定所述双极功率半导体元件(108)的接通电流(Ion)的测量值。
19.如前面权利要求所述的方法，还包括：通过在所述电流感测元件(110)的所述第一管脚(P1)和所述第二管脚(P2)之间强制电流(I)并且测量所述第一管脚(P1)和所述第二管脚(P2)之间的电压(V)，或者通过在所述电流感测元件(110)的所述第一管脚(P1)和所述第二管脚(P2)之间强制电压(V)并且测量通过所述第一管脚(P1)和所述第二管脚(P2)的电流(I)，来确定所述双极功率半导体元件(108)的温度的测量值。
20.如两个前面权利要求中任一项所述的方法，其中
基于所述电流感测元件(110)的测量电流(Iph)和校准数据集来确定所述双极功率半导体元件(108)的所述接通电流(Ion)。
21.如前面权利要求中任一项所述的方法，其中所述电流感测元件(110)被热耦合到所述半导体主体。
22.如前面权利要求中任一项所述的方法，其中所述电流感测元件(110)被布置在所述配线区域(104)中。
CN202311265992.6A 2022-09-27 2023-09-27 功率半导体装置、测量系统和用于确定功率半导体装置的电流的方法 Pending CN117790551A (zh)

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