CN117790437A

CN117790437A - Radio frequency module and preparation method thereof

Info

Publication number: CN117790437A
Application number: CN202311862932.2A
Authority: CN
Inventors: 郑章尧
Original assignee: Quanzhou San'an Integrated Circuit Co ltd
Current assignee: Quanzhou San'an Integrated Circuit Co ltd
Priority date: 2023-12-29
Filing date: 2023-12-29
Publication date: 2024-03-29

Abstract

The embodiment of the application provides a radio frequency module and a preparation method of the radio frequency module. The radio frequency module comprises: the function module, the function module includes: a substrate; the first chip is arranged on the substrate and is electrically connected with the substrate; the second chip is arranged on one side of the substrate, which is away from the first chip, and is electrically connected with the substrate; and the filter module is electrically connected with the functional module, and is arranged on one side of the first chip away from the substrate, a heat dissipation gap is arranged between the filter module and the functional module, and the power of the first chip is larger than that of the second chip. The radio frequency module of the embodiment can be highly integrated, the overall size of the radio frequency module is reduced, the heat dissipation effect of the radio frequency module can be improved, and the stability of the radio frequency module is further improved.

Description

Radio frequency module and preparation method thereof

Technical Field

The present disclosure relates to the field of semiconductor technologies, and in particular, to a radio frequency module and a method for manufacturing the radio frequency module.

Background

The main difference between 3D packages and 2.5D packages is: the 2.5D package is wired and punched on an Interposer (Interposer), while the 3D package is directly punched and wired on the chip to electrically connect the upper and lower chips. 3D integration currently refers to integration through 3D TSVs (Through Silicon Via, through silicon vias) to a large extent. The 3D package structure is that all chips and passive devices are located above the plane of the substrate, the chips are stacked together, through silicon vias penetrating through the chips are arranged above the plane of the substrate, and wiring and through holes are also arranged on the substrate, so that the chips and the substrate are electrically connected.

Advanced packaging technology is increasingly dependent on advanced manufacturing processes, and on close collaboration between design and manufacturing enterprises, 3D integration of different types of chips, typically two different chips vertically stacked and electrically connected together by TSVs and interconnected with an underlying substrate. However, the structure cannot be highly integrated to meet the high performance improvement of the radio frequency module, and the heat dissipation of the high-power chip after the high integration is also a problem to be solved.

Disclosure of Invention

Therefore, in order to overcome at least some of the defects and shortcomings in the prior art, embodiments of the present application provide a radio frequency module and a method for manufacturing a radio frequency module.

Specifically, in one aspect, the radio frequency module provided in the embodiment of the present application includes: the function module, the function module includes: a substrate; the first chip is arranged on the substrate and is electrically connected with the substrate; the second chip is arranged on one side of the substrate, which is away from the first chip, and is electrically connected with the substrate; and the filter module is electrically connected with the functional module, and is arranged on one side of the first chip away from the substrate, a heat dissipation gap is arranged between the filter module and the functional module, and the power of the first chip is larger than that of the second chip.

On the other hand, the embodiment of the application also provides a preparation method of the radio frequency module, which comprises the following steps: providing a functional module, the functional module comprising: a substrate; the first chip is arranged on the substrate and is electrically connected with the substrate; the second chip is arranged on one side of the substrate, which is away from the first chip, and is electrically connected with the substrate; providing a filter module; and connecting the filter module at one side of the first chip, which is far away from the substrate, and forming a heat dissipation gap between the filter module and the functional module.

From the above, this embodiment of the application is through setting up the function module into including first chip, second chip and base plate, set up first chip and second chip in the both sides of base plate respectively to connect function module and wave filter module, thereby make radio frequency module can highly integrate, reduce radio frequency module's overall dimension, thereby can reduce the terminal space, through setting up the heat dissipation clearance between function module and wave filter module, and set up the adjacent heat dissipation clearance of high-power first chip, can improve radio frequency module's radiating effect, further promote radio frequency module's stability.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic structural diagram of a radio frequency module according to a first embodiment of the present application.

Fig. 2 is a schematic flow chart of a method for manufacturing a radio frequency module according to a second embodiment of the present application.

Fig. 3 is a schematic diagram illustrating a partial flow of step S10 in fig. 2.

Fig. 4 is a schematic flow chart of step S10 in fig. 2.

Fig. 5 is a schematic flow chart of step S20 in fig. 2.

Fig. 6A to 6J are schematic structural diagrams of the functional module prepared in the present application.

Fig. 7A to 7D are schematic structural diagrams of a filter module prepared in the present application.

Reference numerals illustrate:

100. a radio frequency module; 10. a substrate; 20. a wall layer; 21. a third conductive via; 31. a first chip; 32. a third chip; 33. a first conductive via; 40. a first encapsulation layer; 51. a second chip; 52. a fourth chip; 53. a second conductive via; 60. a second encapsulation layer; 70. a wiring layer; 80. a first solder layer; 91. an adapter plate; 92. a filter device; 93. a third encapsulation layer; 94. and a second solder layer.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden on the person of ordinary skill in the art based on the embodiments described herein, are intended to be within the scope of this application.

It should be noted that all directional indicators (such as up, down, left, right, front, rear, top, bottom) in the embodiments of the present application are merely used to explain the relative positional relationship, movement conditions, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicators are correspondingly changed. Furthermore, in the embodiments of the invention and in the claims, the term "perpendicular" means that the angle between two elements is 90 ° or there is a deviation of-5 ° to +5°, and the term "parallel" means that the angle between two elements is 0 ° or there is a deviation of-5 ° to +5°.

The descriptions in the embodiments of the present application, such as with respect to "first," "second," etc., are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature.

[ first embodiment ]

A first embodiment of the present application provides a radio frequency module 100, which may include, for example: a filter module A and a functional module B.

Referring to fig. 1, the functional module B includes: a substrate 10, a first chip 31 and a second chip 51. In the rf module 100, the substrate 10 is mainly used for supporting and fixing electronic components (for example, a first chip and a second chip), and providing electrical and mechanical connection thereto, so as to perform functions of signal transmission, power distribution, thermal management, and the like. The substrate 10 may be, for example, a ceramic substrate, a glass substrate, a metal substrate, a polymer substrate, etc., and may be specifically set according to practical requirements. The substrate 10 is provided with conductive vias and metal wirings. The first chip 31 and the second chip 51 may be, for example, functional chips, switching chips, etc. of the radio frequency module 100, and the power of the first chip 31 may be, for example, greater than the power of the second chip 51, and when the radio frequency module 100 operates, the operating heat of the first chip 31 is greater than the operating heat of the second chip 51. The first chip 31 is disposed on the substrate 10, and the first chip 31 is electrically connected to the substrate 10, specifically, may be electrically connected to the substrate 10 through, for example, conductive vias and metal wirings on the substrate 10. The second chip 51 is disposed on a side of the substrate 10 facing away from the first chip 31, and is electrically connected to the substrate 10, specifically, may be electrically connected to the substrate 10 through, for example, conductive vias and metal wirings on the substrate 10. I.e. the first chip 31 and the second chip 51 are arranged on both sides of the substrate 10, respectively.

The filter module a and the functional module B are electrically connected, and the filter module a is disposed on a side of the first chip 31 away from the substrate 10, and a heat dissipation gap 101 is disposed between the filter module a and the functional module B. By disposing the first chip 31 and the second chip 51 on both sides of the substrate 10, respectively, and electrically connecting the functional module B and the filter module a, the high integration of the rf module 100 is achieved, the overall size of the rf module 100 can be reduced, and thus the terminal space can be reduced. In addition, by arranging the heat dissipation gap 101 between the functional module B and the filter module a and arranging the high-power first chip 31 adjacent to the heat dissipation gap 101, the heat dissipation effect of the radio frequency module 100 can be improved, and the stability of the radio frequency module 100 can be further improved.

Further, the size of the heat dissipation gap 101 is in the range of 50 μm to 200 μm, that is, the thickness of the heat dissipation gap 101 in the height direction perpendicular to the substrate 10 is in the range of 50 μm to 200 μm, and specifically may be, for example, 50 μm, 100 μm, 150 μm, or 200 μm. When the size range of the heat dissipation gap 101 is smaller than 50 μm, the process difficulty is high and the cost is high, and the connection stability between the filter module a and the functional module B is low due to the too small heat dissipation gap 101; and the heat dissipation gap 101 is larger than 200 μm, which also results in higher connection cost and lower reliability. Therefore, the size range of the heat dissipation gap 101 is set to 50 μm to 200 μm, so that the heat dissipation of the radio frequency module 100 is improved, while the connection stability and reliability of the radio frequency module 100 are ensured, and the process difficulty and cost are not increased.

In the present embodiment, the first chip 31 may be, for example, a high-power chip, and the second chip 51 may be, for example, a low-power chip. The first chip 31 may be, for example, a Power Amplifier chip (PA), an HBT (Heterojunction Bipolar Transistor ) Power Amplifier, a GaN (Gallium Nitride) Power device, a COMS (Complementary Metal-Oxide Semiconductor, complementary metal oxide semiconductor) or a HEMT (High Electron Mobility Transistor ). The second chip 51 may be, for example, an SOI (Silicon-On-Insulator) switching device, SOC (System On a Chip) switching device. Of course, the present embodiment is not limited thereto.

Referring back to fig. 1, the functional module B may further include, for example: the wall layer 20, the first encapsulation layer 40, the second encapsulation layer 60, the wiring layer 70, and the first solder layer 80.

The wall layer 20 may be disposed on the substrate 10, for example, a material of the wall layer 20 may be Polyimide (PI), epoxy, photoresist, silicon, or glass, for example, and the wall layer 20 may be enclosed on the substrate 10 to form a cavity, and the first chip 31 is disposed in the cavity. The wall layer 20 may be provided with a third conductive via 21, for example, and the third conductive via 21 penetrates through the upper and lower surfaces of the wall layer 20. The material of the first encapsulation layer 40 may be, for example, epoxy, the first encapsulation layer 40 is disposed on the substrate 10, the first encapsulation layer 40 covers the first chip 31, and the first encapsulation layer 40 exposes the third conductive via 21 of the wall layer 20 facing away from the substrate 10, i.e. the upper surface of the wall layer 20 is exposed to air, so as to expose the third conductive via 21, and the filter module a is electrically connected to the substrate 10 through the third conductive via 21.

The material of the second encapsulation layer 60 may be, for example, epoxy, and the second encapsulation layer 60 may be, for example, disposed on the side of the substrate 10 where the second chip 51 is disposed and cover the second chip 51. The second package layer 60 encapsulates the second chip 51, the wiring layer 70 is disposed on an outer surface of the second package layer 60, the wiring layer 70 may be, for example, an RDL wiring layer, the wiring layer 70 may be specifically electrically connected with the substrate 10, for example, and may be disposed on a side surface of the second package layer 60 and an outer surface of the second package layer 60 facing away from the substrate 10, for example. The first solder layer 80 may be, for example, a solder ball, and the material of the first solder layer 80 may be, for example, copper, gold, tin, or the like, and the first solder layer 80 is connected to a side of the wiring layer 70 facing away from the substrate 10.

In one embodiment of the present embodiment, the heat dissipation coefficient of the first encapsulation layer 40 is greater than 1.5W/m ² K may specifically be, for example, 5W/m ² K. Because the first packaging layer 40 is made of a heat conductive material, the first packaging layer 40 has a better heat dissipation effect, so as to further improve the heat dissipation effect of the radio frequency module 100. In this embodiment, the first encapsulation layer 40 may be made of epoxy resin or polyimide resin, and in order to improve the heat dissipation of the encapsulation layer, the encapsulation layer may be filled with a material with a high thermal conductivity, such as powder of metal oxide, nitride (boron nitride, aluminum nitride), silicon carbide, or the like.

The filter module a may for example comprise: an interposer 91, a filter device 92, a third encapsulation layer 93, and a second solder layer 94. The Interposer 91 may be, for example, an Interposer (Interposer), the filter device 92 is disposed on the Interposer 91, and the filter device 92 is electrically connected to the Interposer 91. The filter devices 92 may include two, for example, and the two filter devices 92 are tiled on the interposer 91, which is not limited in this embodiment. The filter device 92 may be, for example, a WLP (Wafer Level Packaging, wafer level package) filter device, or may be, for example, a CLP (Chip Level Packaging, chip level package) filter device, which is not limited thereto. The material of the third encapsulation layer 93 may be, for example, epoxy, and the third encapsulation layer 93 is disposed on the interposer 91 and covers the filter device 92. The second solder layer 94 is disposed on a side of the interposer 91 facing away from the filter device 92, the second solder layer 94 is electrically connected to the filter device 92 through the interposer 91, and the material of the second solder layer 94 may be, for example, gold, copper, tin, or other metals. The filter module a and the functional module B are connected by a second solder layer 94, the second solder layer 94 is connected between the wall layer 20 and the interposer 91, and the second solder layer 94 is electrically connected with the third conductive via 21. The filter module a and the functional module B may be connected, for example, by eutectic fusion, with a heat dissipation gap 101 disposed between the interposer 91 and the first encapsulation layer 40.

In one implementation of the present embodiment, the functional module B may further include, for example, a third chip 32 and a fourth chip 52. The third chip 32 may be disposed between the first chip 31 and the substrate 10, for example, the first chip 31 and the third chip 32 may be stacked, and the third chip 32 and the first chip 31 may be electrically connected to the substrate 10 through the first conductive via 33; the fourth chip 52 is stacked with the second chip 51, and the second chip 51 and the fourth chip 52 are electrically connected to the substrate 10 through the second conductive via 53. Wherein the power of the first chip 31 may be, for example, greater than the power of the second chip 51, the third chip 32 and the fourth chip 52. The third chip 32 and the fourth chip 52 may be, for example, functional chips, and of course, the number of chips may be set according to practical requirements, which is not limited to this embodiment. The first, second and third conductive vias 33, 53 and 21 may be through TSVs (Through Silicon Via, through silicon via technology), for example, which are vertical electrical interconnections through silicon vias by making vertical vias between chips, wafers and wafers. The functional module B in the present embodiment applies RDL technology and TSV technology, uses advanced packaging core technology, and enables high integration of the functional module B.

To sum up, in this embodiment of the present application, by setting the functional module B to include the first chip 31, the second chip 51 and the substrate 10, setting the first chip 31 and the second chip 51 on two sides of the substrate 10 respectively, and connecting the functional module B with the filter module a, so that the radio frequency module 100 may be highly integrated, the overall size of the radio frequency module 100 is reduced, so that the terminal space may be reduced, by setting the heat dissipation gap 101 between the functional module B and the filter module a, and setting the high-power first chip 31 adjacent to the heat dissipation gap 101, the heat dissipation effect of the radio frequency module 100 may be improved, and the stability of the radio frequency module 100 may be further improved.

[ second embodiment ]

Referring to fig. 2, a second embodiment of the present application provides a method for preparing a radio frequency module, which may, for example, include the following steps:

s10, providing a functional module;

s20, providing a filter module; and

s30, connecting the filter module at one side of the first chip, which is away from the substrate, so that a heat dissipation gap is formed between the filter module and the functional module.

Wherein, functional module B includes: a substrate 10, a first chip 31 and a second chip 51. In the rf module 100, the substrate 10 is mainly used for supporting and fixing electronic components (for example, a first chip and a second chip), and providing electrical and mechanical connection thereto, so as to perform functions of signal transmission, power distribution, thermal management, and the like. The substrate 10 may be, for example, a ceramic substrate, a glass substrate, a metal substrate, a polymer substrate, etc., and may be specifically set according to practical requirements. The substrate 10 is provided with conductive vias and metal wirings. The first chip 31 and the second chip 51 may be, for example, functional chips, switching chips, etc. of the radio frequency module 100, and the power of the first chip 31 may be, for example, greater than the power of the second chip 51, and when the radio frequency module 100 operates, the operating heat of the first chip 31 is greater than the operating heat of the second chip 51. The first chip 31 is disposed on the substrate 10, and the first chip 31 is electrically connected to the substrate 10, specifically, may be electrically connected to the substrate 10 through, for example, conductive vias and metal wirings on the substrate 10. The second chip 51 is disposed on a side of the substrate 10 facing away from the first chip 31, and is electrically connected to the substrate 10, specifically, may be electrically connected to the substrate 10 through, for example, conductive vias and metal wirings on the substrate 10. I.e. the first chip 31 and the second chip 51 are arranged on both sides of the substrate 10, respectively.

Referring to fig. 3, providing a functional module may, for example, include the steps of:

s11, providing a substrate;

s12, preparing a wall layer on the substrate, wherein the wall layer forms a cavity on the substrate, and a third conductive through hole is formed in the wall layer;

s13, forming a first chip on the substrate, wherein the first chip is arranged in the cavity;

s14, forming a first packaging layer, wherein the first packaging layer covers the wall layer and the first chip, and the first packaging layer exposes the third conductive through hole of the wall layer, which is away from the substrate.

Referring to fig. 4, providing the functional module may, for example, further comprise the steps of:

s16, forming a second chip on one side of the substrate away from the first chip;

s17, forming a second packaging layer, wherein the second packaging layer covers the second chip;

s18, forming a wiring layer on the outer surface of the second packaging layer;

and S19, forming a first solder layer on one side of the wiring layer, which is away from the substrate.

Referring to fig. 5, providing a filter module may, for example, include the steps of:

s21, providing an adapter plate;

s22, forming a filter device on the adapter plate;

s23, forming a third packaging layer, wherein the third packaging layer covers the filter device; and

s24, forming a second solder layer on one side, away from the filter device, of the adapter plate, wherein the second solder layer is electrically connected with the filter device through the adapter plate.

As shown in fig. 6A, a substrate 10 is provided, and the substrate 10 may be, for example, a ceramic substrate, a glass substrate, a metal substrate, a polymer substrate, or the like, and the substrate 10 may be provided with, for example, conductive through holes and metal wirings. As shown in fig. 6B, a wall layer 20 is prepared on the substrate 10, the material of the wall layer 20 may be Polyimide (PI), epoxy, photoresist, silicon, glass, or the like, the wall layer 20 may be enclosed to form a cavity on the substrate 10, and a through hole communicating with a metal wiring on the substrate 10 is formed in the wall layer 20. As shown in fig. 6C, the third conductive via 21 is formed in the via hole of the wall layer 20, and specifically, the third conductive via 21 may be formed by, for example, sputtering, electroplating, or the like. As shown in fig. 6D, the first chip 31 and the third chip 32 may be formed on the substrate 10, for example, and the first conductive via 33 is formed through a process of opening, reflow, flux cleaning, or the like to electrically connect the first chip 31 and the third chip 32 with the substrate 10 through the first conductive via 33. As shown in fig. 6E, a first encapsulation layer 40 is formed, where the first encapsulation layer 40 covers the wall layer 20 and the first and third chips 31 and 32, i.e., the first encapsulation layer 40 encapsulates the substrate 10 on the side where the first chip 31 is disposed. As shown in fig. 6F, the first encapsulation layer 40 is removed to protrude from the upper surface of the wall layer 20, so that the first encapsulation layer 40 exposes the upper surface of the wall layer 20 facing away from the substrate 10, and specifically, the third conductive via 21 on the side of the wall layer 20 facing away from the substrate 10 may be leaked through grinding, polishing, or the like.

As shown in fig. 6G, the second chip 51 and the fourth chip 52 may be formed, for example, on a side of the substrate 10 facing away from the first chip 31, and the second conductive via 53 may be formed through a process of opening, reflow, solder cleaning, or the like to electrically connect the second chip 51 and the fourth chip 52 with the substrate 10 through the second conductive via 53. As shown in fig. 6H, a second encapsulation layer 60 is formed, the second encapsulation layer 60 covering the second chip 51 and the fourth chip 52, i.e., the second encapsulation layer 60 is encapsulated on the side of the substrate 10 where the second chip 51 is disposed. As shown in fig. 6I, the wiring layer 70 is formed on the outer surface of the second encapsulation layer 60, and specifically may be formed by, for example, sputtering, electroplating, or the like. As shown in fig. 6J, the first solder layer 80 is formed on a side of the wiring layer 70 facing away from the substrate 10, and specifically, for example, solder balls may be formed, which is not limited to this embodiment.

As shown in fig. 7A, an interposer 91 is provided, and the interposer 91 may be provided with conductive vias and metal wirings, for example. As shown in fig. 7B, a filter device 92 is formed on the interposer 91, and the filter device 92 is electrically connected to the interposer 91. As shown in fig. 7C, a third encapsulation layer 93 is formed, and the third encapsulation layer 93 covers the filter device 92 and is disposed on the interposer 91. As shown in fig. 7D, a second solder layer 94 is formed on a side of the interposer 91 facing away from the filter device 92, the second solder layer 94 being electrically connected to the filter device 92 through the interposer 91, the second solder layer 94 being for example solder paste.

The filter module a and the functional module B are connected through the second solder layer 94, specifically, for example, the functional module B may be placed on the filter module a, the third conductive through hole 21 on the wall layer 20 is placed corresponding to the second solder layer 94, the filter module a and the functional module B are connected through the second solder layer 94 through eutectic fusion, and a heat dissipation gap 101 is formed between the interposer 91 and the first package layer 40. The size of the heat dissipation gap 101 ranges from 50 μm to 200 μm, that is, the thickness of the heat dissipation gap 101 in the height direction perpendicular to the substrate 10 ranges from 50 μm to 200 μm, and specifically may be, for example, 50 μm, 100 μm, 150 μm, or 200 μm.

In summary, in the radio frequency module 100 formed by the above preparation process, the functional module B is configured to include the first chip 31, the second chip 51 and the substrate 10, the first chip 31 and the second chip 51 are respectively disposed on two sides of the substrate 10, and the functional module B is connected with the filter module a, so that the radio frequency module 100 can be highly integrated, the overall size of the radio frequency module 100 is reduced, and thus the terminal space can be reduced, and the heat dissipation effect of the radio frequency module 100 can be improved by setting the heat dissipation gap 101 between the functional module B and the filter module a and setting the high-power first chip 31 adjacent to the heat dissipation gap 101, thereby further improving the stability of the radio frequency module 100.

In addition, it is understood that the foregoing embodiments are merely exemplary descriptions of the present application, and the technical solutions of the embodiments may be arbitrarily combined and matched without conflict in technical features and contradiction in structure and without departing from the purpose of the present application.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and are not limiting thereof; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the corresponding technical solutions.

Claims

1. A radio frequency module, comprising:

the function module, the function module includes:

a substrate;

the first chip is arranged on the substrate and is electrically connected with the substrate;

the second chip is arranged on one side of the substrate, which is away from the first chip, and is electrically connected with the substrate; and

the filter module is electrically connected with the functional module, and is arranged on one side, far away from the substrate, of the first chip, a heat dissipation gap is arranged between the filter module and the functional module, and the power of the first chip is larger than that of the second chip.

2. The radio frequency module according to claim 1, wherein the size of the heat dissipation gap is in a range of 50 μm to 200 μm.

3. The radio frequency module of claim 1, wherein the functional module further comprises:

the wall layer is arranged on the substrate, the first chip is positioned in a cavity enclosed by the wall layer, and a third conductive through hole is formed in the wall layer;

the first packaging layer covers the first chip, the first packaging layer exposes the third conductive through hole of the wall layer, which is away from the substrate, and the filter module is electrically connected with the substrate through the third conductive through hole.

4. The radio frequency module of claim 3, wherein the functional module further comprises:

a second encapsulation layer covering the second chip;

the wiring layer is arranged on the outer surface of the second packaging layer and is electrically connected with the substrate; and

and the first solder layer is connected to one side of the wiring layer, which is away from the substrate.

5. The radio frequency module according to claim 3, wherein the heat dissipation factor of the first encapsulation layer is greater than 1.5W/m ² ·K。

6. The radio frequency module of claim 3, wherein the filter module comprises:

an adapter plate;

the filter device is arranged on the adapter plate and is electrically connected with the adapter plate;

the third packaging layer is arranged on the adapter plate and covers the filter device; and

the second solder layer is arranged on one side, away from the filter device, of the adapter plate, and the second solder layer is electrically connected with the filter device through the adapter plate.

7. The radio frequency module according to claim 6, wherein the filter module and the functional module are connected by the second solder layer, the second solder layer is connected between the wall layer and the interposer, and the second solder layer is electrically connected with the third conductive via, and the heat dissipation gap is disposed between the interposer and the first package layer.

8. The radio frequency module of claim 3, wherein the functional module further comprises:

the third chip is arranged between the first chip and the substrate, the first chip and the third chip are arranged in a laminated mode, and the third chip and the first chip are electrically connected with the substrate through a first conductive through hole.

9. The radio frequency module of claim 3, wherein the functional module further comprises:

and the fourth chip is stacked with the second chip, and the second chip and the fourth chip are electrically connected with the substrate through a second conductive through hole.

10. The radio frequency module of claim 8, wherein the power of the first chip is greater than the power of the second chip and the third chip.

11. The radio frequency module of claim 9, wherein the power of the first chip is greater than the power of the second chip and the fourth chip.

12. The radio frequency module of claim 1, wherein the first chip is a power amplifier chip and the second chip is a switching device.

13. A method of manufacturing a radio frequency module, comprising:

providing a functional module, the functional module comprising:

a substrate;

the first chip is arranged on the substrate and is electrically connected with the substrate; and

the second chip is arranged on one side of the substrate, which is away from the first chip, and is electrically connected with the substrate;

providing a filter module; and

and one side of the first chip, which is far away from the substrate, is connected with the filter module, and a heat dissipation gap is formed between the filter module and the functional module.

14. The method for manufacturing a radio frequency module according to claim 13, wherein the providing the functional module comprises:

providing a substrate;

preparing a wall layer on the substrate, wherein the wall layer forms a cavity on the substrate, and a third conductive through hole is formed in the wall layer;

forming a first chip on the substrate, wherein the first chip is arranged in the cavity;

and forming a first packaging layer, wherein the first packaging layer covers the wall layer and the first chip, and the first packaging layer exposes the third conductive through hole of the wall layer, which is away from the substrate.

15. The method for manufacturing a radio frequency module according to claim 14, wherein the providing function module further comprises:

forming a second chip on one side of the substrate away from the first chip;

forming a second packaging layer, wherein the second packaging layer covers the second chip;

forming a wiring layer on the outer surface of the second packaging layer;

and forming a first solder layer on one side of the wiring layer, which is away from the substrate.

16. The method for manufacturing a radio frequency module according to claim 14, wherein the providing a filter module comprises:

providing an adapter plate;

forming a filter device on the adapter plate;

forming a third packaging layer, wherein the third packaging layer covers the filter device; and

and forming a second solder layer on one side of the adapter plate, which is away from the filter device, wherein the second solder layer is electrically connected with the filter device through the adapter plate.

17. The method for manufacturing a radio frequency module according to claim 16, wherein the connecting the filter module on the side of the first chip facing away from the substrate, such that a heat dissipation gap is formed between the filter module and the functional module, comprises:

and one side of the wall layer, which is away from the substrate, is connected with the adapter plate through the second solder layer, so that a heat dissipation gap is formed between the adapter plate and the first packaging layer.