CN117790344A - Ceramic riving knife with composite CVD diamond coating and preparation method thereof - Google Patents
Ceramic riving knife with composite CVD diamond coating and preparation method thereof Download PDFInfo
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- 238000000576 coating method Methods 0.000 title claims abstract description 136
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 128
- 239000010432 diamond Substances 0.000 title claims abstract description 128
- 239000000919 ceramic Substances 0.000 title claims abstract description 102
- 239000002131 composite material Substances 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 238000003466 welding Methods 0.000 claims abstract description 103
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- 240000005702 Galium aparine Species 0.000 claims description 44
- 230000003746 surface roughness Effects 0.000 claims description 34
- 238000000151 deposition Methods 0.000 claims description 32
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 29
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 18
- 229910052786 argon Inorganic materials 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 14
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
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- Chemical Vapour Deposition (AREA)
Abstract
The application relates to the technical field of semiconductor processing welding tools, and particularly discloses a ceramic riving knife with a composite CVD diamond coating and a preparation method thereof. The ceramic riving knife comprises a riving knife body, an inner hole and a welding nozzle positioned at one end of the body, wherein the inner hole extends along the longitudinal axis direction of the riving knife body and is terminated at an inner chamfer of the welding nozzle; a micron diamond coating is deposited on the end face of the welding nozzle, and a nanometer diamond coating is deposited on the surface of the inner hole; and a transition layer is deposited between the micron diamond coating and the end face of the welding nozzle and between the nanometer diamond coating and the surface of the inner hole. The fatigue tension value of the second welding spot of the ceramic chopper obtained by the application is reduced to 2.7g which is about 10 times longer than the service life of the uncoated ceramic chopper after being welded for about 2000 ten thousand times.
Description
Technical Field
The application relates to the technical field of semiconductor processing welding tools, in particular to a ceramic riving knife with a composite CVD diamond coating and a preparation method thereof.
Background
Wire bonding is the use of thin metal wires (e.g., copper, gold, silver, etc.), as well as heat, pressure, and ultrasonic energy to tightly bond the metal leads to the substrate pads, thereby achieving electrical interconnection between the chips and the substrate and information communication between the chips, forming an integrated circuit module.
The ceramic chopper, also called ceramic nozzle or capillary, is a welding ceramic tool for wire bonding of a bonding machine, and in the wire bonding process, like a needle for threading a wire in a sewing machine, a metal wire needs to be sewn on another chip or substrate through the ceramic chopper. At present, ceramic cleavers are mainly toughened alumina ceramics, and because of high dimensional accuracy and high manufacturing difficulty, the market of the ceramic cleavers is occupied by foreign companies, and small parts of products are imported as advanced ceramic technology in China is developed in the years.
Because a bonding machine needs to bond millions of welding spots every day under the working condition of full load, and each ceramic chopper can only bond about two millions of welding spots, the service life is shorter, basically one device consumes 1-2 chopper every day, and therefore, in order to reduce the cost and improve the service efficiency of the device, more wear-resistant chopper needs to be developed.
In addition, under the condition that the cost of the semiconductor package is increasingly reduced, a bonding wire with low cost is imperative, so that a copper wire is imperative to replace a gold wire, and the copper wire is the main bonding wire for replacing the gold wire in the future. However, the reliability of copper wires in thermal cycle is far inferior to that of gold wires and is also harder than gold wires and alloy wires, so that a larger ultrasonic wave and a larger adhesive force are required for wire bonding, and a higher strength and a better wear resistance are required for both the substrate and the ceramic cleaver to avoid deterioration of the encapsulation effect.
Disclosure of Invention
In order to improve the wear resistance of the ceramic riving knife, the application provides a ceramic riving knife with a composite CVD diamond coating and a preparation method thereof.
In a first aspect, the present application provides a ceramic cleaver with a composite CVD diamond coating that employs the following method scheme:
the ceramic riving knife with the composite CVD diamond coating comprises a riving knife body, an inner hole and a welding nozzle positioned at one end of the body, wherein the inner hole extends along the longitudinal axis direction of the riving knife body and is terminated at an inner chamfer of the welding nozzle; a micron diamond coating is deposited on the end face of the welding nozzle, and a nanometer diamond coating is deposited on the surface of the inner hole; and a transition layer is deposited between the micron diamond coating and the end face of the welding nozzle and between the nanometer diamond coating and the surface of the inner hole.
By adopting the scheme, as the diamond has higher hardness, the diamond coating is deposited on the end face of the ceramic riving knife welding nozzle and the surface of the inner hole, the surface microhardness can reach more than 60GPa, and the wear resistance and the deformation resistance of the ceramic riving knife are improved, so that the service life of the ceramic riving knife is prolonged.
Meanwhile, lead materials of diamond, gold, copper, silver and the like are not infiltrated (infiltration angles of diamond, gold, copper, silver are all larger than 120 degrees), adhesion between a chopper and the lead can be avoided when the lead is bonded, and bonding strength is improved.
In addition, the diamond coating deposited on the end face of the welding nozzle is in a micron level, the surface roughness of the coating is higher, and the welding quality and bonding strength can be obviously improved during ultrasonic welding. The nano diamond coating is deposited on the surface of the inner hole, and the surface roughness and friction coefficient of the coating are reduced, so that the friction force of a lead is reduced, the lead scratch and the breakage in the welding process are avoided, the bonding strength of a second bonding point is improved, the surface hardness and the wear resistance of the inner hole of the riving knife are improved, and the service life is prolonged. And when the fatigue tension value of the second welding spot reaches 2.7g, the welding times of the ceramic cleaver with the micron diamond coating deposited on the end face of the welding nozzle and the nano diamond coating deposited on the surface of the inner hole are about 10 times of the welding times of the uncoated ceramic cleaver.
Furthermore, the transition layers are also deposited between the end surfaces of the micron diamond coating and the welding nozzle and between the surfaces of the nano diamond coating and the inner hole, so that the thermal expansion coefficient difference of the interface material is reduced, the adhesive force of the micron diamond coating and the nano diamond coating on the end surfaces of the welding nozzle and the surfaces of the inner hole respectively can be improved, and the wear resistance of the micron diamond coating and the nano diamond coating on the ceramic cleaver is ensured.
It should be noted that: the inner hole surface deposited with the nano-diamond coating in the application at least comprises a part of the inner hole surface near the welding nozzle of the riving knife.
As preferable: the average size of diamond grains of the micron diamond coating is 1-10 mu m, and the average thickness is 1-15 mu m; the average size of diamond grains of the nano diamond coating is 5-500nm, and the average thickness is 50-1000nm.
By adopting the scheme, the grain size of the micron diamond is controlled to be 1-10 mu m, and the grain size of the nano diamond is controlled to be 5-500nm, so that the micron diamond coating and the nano diamond coating have proper surface roughness and friction coefficient.
More preferably: the average size of diamond grains of the micron diamond coating is 2-5 mu m, and the average thickness is 3-10 mu m; the average size of diamond grains of the nano diamond coating is 20-100nm, and the average thickness is 300-600nm.
As preferable: the surface roughness Ra of the end face of the welding nozzle after the micron diamond coating is deposited is 0.5-4 mu m; the surface roughness Ra of the inner hole after the nano diamond coating is deposited is less than or equal to 0.5 mu m.
By adopting the scheme, the micron diamond coating has higher surface roughness, which is beneficial to improving the welding quality and bonding strength during ultrasonic welding; the nano diamond coating has lower surface roughness, can reduce lead friction force, avoid lead scratch and broken wire in the welding process, further improve the bonding strength of the second bonding point, improve the surface hardness of the welding inner hole and improve the wear resistance of the ceramic chopper.
More preferably, the surface roughness Ra of the end surface of the welding tip after depositing the micron diamond coating is 0.8-2 mu m; the surface roughness Ra of the inner hole after the nano diamond coating is deposited is less than or equal to 0.3 mu m.
As preferable: the transition layer is any one or more of a nitride transition layer, a carbide transition layer and a boride transition layer.
Because ceramic riving knife is mainly toughened alumina ceramic, the difference between the thermal expansion coefficient and diamond is larger, the adhesion of diamond coating directly deposited on the surface of the ceramic riving knife is poorer, the ceramic riving knife is easy to fall off, and the thermal expansion coefficient of nitride, carbide or boride ceramic film of aluminum is between the diamond and the alumina ceramic.
As preferable: the transition layer is an aluminum nitride transition layer; the thickness of the aluminum nitride transition layer is 10-1000nm.
More preferably, the thickness of the aluminum nitride transition layer is 300-500nm.
By adopting the scheme, when the transition layer is made of aluminum nitride, the adhesion force between the transition layer and the diamond coating is large, and the adhesion force of the micro-diamond coating and the nano-diamond coating on the surface of the end face and the inner hole of the welding nozzle respectively and the adhesion force between the transition layer and the ceramic riving knife body can be further improved.
In a second aspect, the present application provides a method for preparing a ceramic cleaver with a composite CVD diamond coating according to any one of the above, comprising the following steps:
s1, cleaning an uncoated ceramic chopper;
s2, depositing a transition layer on the end face of the welding nozzle and the surface of the inner hole by adopting a chemical vapor deposition method;
and S3, respectively depositing the micro-diamond and the nano-diamond on the transition layer of the end face of the welding nozzle and the transition layer of the surface of the inner hole by adopting a chemical vapor deposition method to prepare the ceramic chopper.
The cleaning agent used in the step S1 of the present application for cleaning the uncoated ceramic cleaver may be an organic cleaning agent, and the organic cleaning agent may be, for example, absolute ethanol, acetone or methanol; the cleaning mode may be ultrasonic vibration cleaning, for example.
As preferable: in step S2, the transition layer is an aluminum nitride transition layer, and the aluminum nitride transition layer is deposited by the following steps: introducing methane, hydrogen, argon and nitrogen at 1600-1900 ℃ for nitriding reaction, and depositing to obtain the aluminum nitride transition layer.
By adopting the scheme, a certain amount of nitrogen is added while methane, hydrogen and argon are introduced before the diamond coating is deposited, and the aluminum nitride transition layer can be obtained after aluminum oxide is reduced and nitrided in the atmosphere of carbon and nitrogen.
As preferable: the micron diamond coating and the nano diamond coating are prepared by adopting a one-time deposition method; the preparation method comprises the following steps: the chopper after the transition layer is deposited is vertically arranged on the sample stage, wherein the end face of the welding nozzle is positioned above; and then, discharging the mixed gas flow comprising hydrogen, argon and methane from top to bottom through the inner hole, and carrying out deposition reaction to prepare the micro-diamond coating and the nano-diamond coating.
Be provided with on the sample platform that this application adopted with riving knife diameter assorted intercommunicating pore, can set up the riving knife after depositing the transition layer perpendicularly on the sample platform through this intercommunicating pore, the terminal surface of the welding tip of ceramic riving knife faces the air current direction in the deposition process, forms plasma jet top-down through riving knife hole for hole surface deposition nanodiamond through control air supply input pipeline pressure and deposition equipment cavity pressure differential and provides the reaction air supply.
Preferably, the deposition conditions of the deposition reaction are: the temperature at the end face of the welding nozzle is controlled at 780-880 ℃, the hydrogen flow is 6-9SLM, the argon flow is 2.5-6SLM, and the methane flow is CH 4 /H 2 =1 to 3%, the chamber pressure of the deposition apparatus is 2.5 to 4.5kPa, and the gas input line pressure is 9.5 to 14.5kPa.
The deposition apparatus used in the present application may be, for example, a direct-current arc plasma jet CVD apparatus.
The size, thickness and surface roughness Ra of diamond grains in the prepared micron diamond coating and nano diamond coating can be adjusted by adjusting the deposition conditions, so that the micron diamond coating and nano diamond coating with required parameters can be prepared.
As preferable: and water cooling the sample stage in the deposition process. By adopting the scheme, as the sample table is forcedly water-cooled, plasma at the front end of the ceramic chopper is heated, and the tail part is cooled, the front end has a larger temperature gradient towards the tail part, the temperature of the front end is higher, crystal grains rapidly nucleate and grow up to form a micron diamond coating under the same methane concentration, the temperature of an inner hole of the chopper is lower, and the nucleation growth speed of diamond is slower under the same methane concentration, so that the nano diamond coating is formed. Therefore, by adopting the method, the micron diamond coating on the end face of the welding nozzle and the nanometer diamond coating on the surface of the inner hole can be deposited at one time under the same atmosphere, and the method has the advantages of simple deposition process and production time and cost saving.
In summary, the present application includes at least one of the following beneficial technical effects:
(1) The diamond grain size of the micron diamond coating is regulated to be 1-10 mu m, the thickness is 1-15 mu m, the diamond grain size of the nanoscale diamond coating is 5-500nm, the thickness is 50-1000nm, the surface roughness Ra of the deposited micron diamond coating on the end face of the welding nozzle is 0.5-4 mu m, the surface roughness Ra of the deposited nanometer diamond coating on the surface of the inner hole is less than or equal to 0.5 mu m, the micron diamond coating and the nanometer diamond coating have proper surface roughness and friction coefficient, the microhardness of the end face and the inner hole of the welding nozzle of the ceramic chopper is more than 60GPa, the hardness and the wear resistance of the end face and the inner hole of the welding nozzle of the ceramic chopper are obviously improved, and the service life of the ceramic chopper is prolonged.
(2) According to the ceramic cleaver, the transition layer is arranged between the micron diamond coating and the end face of the welding nozzle and between the nano diamond coating and the surface of the inner hole, so that the adhesive force of the micron diamond coating and the nano diamond coating on the end face of the welding nozzle and the inner hole of the welding nozzle can be further improved, and the adhesive force of the micron diamond coating and the nano diamond coating on the ceramic cleaver body can be further improved.
Drawings
Fig. 1 is a microscopic image of a micron diamond coating deposited on the tip end surface of the tip in example 5.
Fig. 2 is a microscopic image of the surface deposited nanodiamond coating of the inner hole in example 5.
Fig. 3 is a schematic structural view of a ceramic cleaver prepared in example 1 with a deposited micro-diamond coating and nano-diamond coating, wherein the left view is a prepared ceramic cleaver and the right view is an enlarged cross-sectional view of the prepared ceramic cleaver nozzle portion.
FIG. 4 is a schematic view showing the flow direction of the air flow when the ceramic cleaver is fabricated in example 1; the left diagram is a schematic diagram of the structure of the sample stage, the right diagram shows the airflow path, and the arrow direction is the airflow direction.
Detailed Description
The present application is described in further detail below in connection with specific examples.
Example 1
The ceramic riving knife of embodiment 1 comprises the following operating steps:
s1, carrying out ultrasonic oscillation cleaning on an uncoated ceramic chopper by adopting an absolute ethyl alcohol organic cleaning agent;
s2, depositing an aluminum nitride transition layer: introducing methane, hydrogen, argon and nitrogen at 1750 ℃ to perform nitriding reaction, and depositing an aluminum nitride transition layer on the end face of the welding nozzle and the surface of the inner hole, wherein the thickness is 10nm.
And S3, respectively depositing the micro-diamond and the nano-diamond on the end face of the welding nozzle and the surface of the inner hole by adopting a chemical vapor deposition method to prepare the ceramic riving knife. A schematic of the structure of a ceramic cleaver deposited micro-diamond coating and nano-diamond coating is shown in fig. 3. Wherein, the average size of the micro-diamond grains is 0.5 mu m, the average thickness of the micro-diamond deposited on the end face of the welding nozzle is 1 mu m, the surface roughness Ra is 0.4-0.5 mu m, the average size of the nano-diamond grains is 80nm, the average thickness of the nano-diamond deposited on the surface of the inner hole is 85nm, and the surface roughness Ra is 0.15-0.2 mu m.
In step S3, the micron diamond is coatedThe layer and the nano diamond coating are prepared by adopting a one-time deposition method, and the specific preparation method comprises the following steps: placing the riving knife with the deposited transition layer in a hole matched with the diameter of the riving knife on a sample table, wherein the hole on the sample table is a communication hole, so that the riving knife is vertically arranged on the sample table, and the end face of a welding nozzle is positioned above the riving knife; and then, the air flow comprising hydrogen, argon and methane flows through the inner hole of the riving knife from top to bottom and is discharged from the bottom of the sample stage (the flow direction schematic diagram of the air flow is shown as figure 4), the deposition reaction is carried out, and the sample stage is continuously water-cooled in the deposition process, so that the micron diamond coating and the nano diamond coating are prepared. The deposition conditions are as follows: the temperature at the end face of the welding nozzle was controlled at 830 ℃, the hydrogen flow rate was 7.5SLM, the argon flow rate was 4SLM, and the methane flow rate was CH 4 /H 2 The chamber pressure of the deposition apparatus (direct current arc plasma jet CVD apparatus) was 3.2kPa, and the gas input line pressure was 12.0kPa.
Example 2
Example 2 is different from the ceramic cleaver of example 1 in that in step S3 the average size of the diamond grains is 2 μm, the average thickness of the diamond grains deposited on the tip face is 5 μm, the surface roughness Ra is 0.8-1 μm, the average size of the diamond grains is 80nm, the average thickness of the diamond grains deposited on the surface of the inner hole is 380nm, the surface roughness Ra is 0.2-0.25 μm, and the rest of the operations are the same as in example 1.
Example 3
Example 3 is different from the ceramic cleaver of example 1 in that in step S3 the average thickness of the micro-diamond grains deposited on the tip face is 4 μm, the average thickness of the nano-diamond grains deposited on the inner hole face is 10 μm, the surface roughness Ra is 1.5-2 μm, the average size of the nano-diamond grains is 80nm, the average thickness of the nano-diamond deposited on the inner hole face is 580nm, the surface roughness Ra is 0.25-0.3 μm, and the rest of the operations are the same as in example 1.
Example 4
Example 4 is different from the ceramic cleaver of example 1 in that in step S3 the average size of the micro-diamond grains is 12 μm, the average thickness of the micro-diamond deposited on the tip face is 15 μm, the surface roughness Ra is 5-6 μm, the average grain size of the nano-diamond is 500nm, the nano-diamondThe thickness of the deposited film on the inner hole surface of the welding nozzle is 1500nm, and the surface roughness Ra is 0.6-0.7 mu m. In addition, the deposition conditions for preparing the micron diamond coating and the nano diamond coating are as follows: the temperature at the end face of the welding nozzle was controlled at 880 ℃, the hydrogen flow rate was 7.5SLM, the argon flow rate was 4SLM, and the methane flow rate was CH 4 /H 2 =1%, the chamber pressure is 3.2kPa, the gas input line pressure is 12.0kPa, and the rest of the procedure is the same as in example 1.
Example 5
Example 5 is different from the ceramic cleaver of example 1 in that in step S3 the average size of the diamond grains is 7 μm, the average thickness of the diamond deposited on the tip face is 12 μm, the surface roughness Ra is 3.5-4 μm, the average size of the diamond grains is 250nm, the average thickness of the diamond deposited on the inner hole surface is 750nm, and the surface roughness Ra is 0.4-0.45 μm. The microscopic image of the micron diamond coating deposited on the end face of the welding nozzle in the prepared ceramic chopper is shown in fig. 1, and the microscopic image of the nanometer diamond coating deposited on the surface of the inner hole is shown in fig. 2. In addition, the deposition conditions for preparing the micron diamond coating and the nano diamond coating are as follows: the temperature at the end face of the welding nozzle was controlled at 880 ℃, the hydrogen flow rate was 7.5SLM, the argon flow rate was 4SLM, and the methane flow rate was CH 4 /H 2 =2%, the chamber pressure is 3.2kPa, the gas input line pressure is 12.0kPa, and the rest of the procedure is the same as in example 1.
Example 6
Example 6 is different from the ceramic cleaver of example 1 in that in step S3 the average size of the micro-diamond grains is 9.5 μm, the average thickness of the micro-diamond deposited on the tip face is 15 μm, the surface roughness Ra is 4.5-5 μm, the average grain size of the nano-diamond is 300nm, the average thickness of the nano-diamond deposited on the inner hole surface is 1000nm, the surface roughness Ra is 0.5-0.55 μm, and in addition, the deposition conditions for the preparation of the micro-diamond coating and the nano-diamond coating are: the temperature at the end face of the welding nozzle was controlled at 880 ℃, the hydrogen flow rate was 7.5SLM, the argon flow rate was 4SLM, and the methane flow rate was CH 4 /H 2 =2%, the chamber pressure is 3.2kPa, the gas input line pressure is 12.0kPa, and the rest of the procedure is the same as in example 1.
Example 7
The ceramic cleaver of example 7 differs from that of example 2 in that the thickness of the aluminum nitride transition layer is 5nm, the average size of the micro diamond grains in step S3 is 2 μm, the average thickness of the micro diamond deposited on the tip face is 5 μm, the surface roughness Ra is 0.8-1 μm, the average size of the nano diamond grains is 80nm, the average thickness of the nano diamond deposited on the inner hole surface is 380nm, the surface roughness Ra is 0.2-0.25 μm, and the rest of the operations are the same as in example 2.
Example 8
Example 8 differs from example 2 in that the aluminum nitride transition layer has a thickness of 300nm, and the rest of the procedure is the same as example 2.
Example 9
Example 9 differs from example 2 in that the thickness of the aluminum nitride transition layer was 500nm, and the rest of the procedure was the same as in example 2.
Example 10
The ceramic cleaver of example 10 differs from example 2 in that the thickness of the aluminum nitride transition layer is 1000nm, and the remainder of the process is the same as that of example 2.
Example 11
The ceramic cleaver of example 11 differs from example 8 in that the transition layer is a boride carbide transition layer, deposited by: methane, hydrogen, argon and diborane are introduced at 1750 ℃, alumina is reduced in carbon and boron atmosphere and reacted with carbon and boron to form a carbon boron aluminum compound, and a carbon boride transition layer is obtained, and the rest of the operations are the same as in example 8.
Comparative example 1
The ceramic cleaver of comparative example 1 was distinguished from example 1 in that no transition layer was deposited between the microdiamond coating and the tip face, and between the nanodiamond coating and the tip bore surface, the remainder of the procedure was the same as in example 1.
Comparative example 2
The ceramic cleaver of comparative example 2 was different from example 1 in that the tip face was not deposited with a micro-diamond coating, the tip interior bore surface was not deposited with a nano-diamond coating, and no transition layer was deposited between the micro-diamond coating and the tip face, and between the nano-diamond coating and the tip interior bore surface, the remainder of the procedure was the same as in example 1.
Performance detection
The ceramic cleavers obtained in examples 1-11 and comparative examples 1-2 were tested using the following procedure, and the specific test results are shown in Table 1.
TABLE 1 Performance test results for different ceramic cleavers
The test results in Table 1 show that the composite CVD diamond coated ceramic cleaver obtained in examples 1-6 and 8-11 of the application has a fatigue tension value of 3.3-3.8g for the second spot welding when the number of welding times is 120 ten thousand times, and has a welding time 1570-2230 ten thousand times when the fatigue tension value of the second spot welding reaches a critical value of 2.7g, and the coating cannot fall off in the welding process. The ceramic riving knife prepared in comparative example 1 has no transition layer deposited between the end surfaces of the micron diamond coating and the welding nozzle and between the nano diamond coating and the surface of the inner hole, so that the bonding between the diamond coating and the ceramic riving knife is not firm, the coating is fallen off before the welding times are less than 120 ten thousand times, and the transition layer deposited between the micron diamond coating and the end surfaces of the welding nozzle and between the nano diamond coating and the surface of the inner hole can prolong the service life of the ceramic riving knife.
According to the combination of the performance detection data of the ceramic cleavers in the embodiments 1-6, the fatigue tension value of the second spot welding point is lower when the welding times of the ceramic cleavers in the embodiments 1 and 4 are 120 ten thousand times, and is 3.3g and 3.4g respectively, the welding times when the fatigue tension value of the second spot welding point reaches a critical value of 2.7g are 1610 ten thousand times and 1570 ten thousand times respectively, and the ceramic cleavers are lower than those in the embodiments 2-3 and 5-6, mainly because the average size of micron diamond grains on the ceramic cleavers in the embodiment 1 is only 0.5 mu m, the surface roughness of a micron diamond coating is lower, the welding quality and bonding strength of the ceramic cleavers are reduced, meanwhile, the thickness of the micron diamond coating is only 1 mu m, the thickness of the nanometer diamond coating is only 85nm, the coating is thinner and is easy to be worn and corroded by metal, so that the service life is reduced, and the welding times when the fatigue tension value of the second spot welding point reaches the critical value of 2.7g are reduced; in example 4, the average size of the micro diamond grains on the ceramic chopper was 12 μm, the average size of the nano diamond grains was 500nm, which resulted in that the surface roughness of the micro diamond coating and the micro diamond coating were too high, the too high surface roughness also reduced the welding quality and bonding strength of the ceramic chopper, and the friction force of the chopper during use was too large, even in the case of thicker coating, the number of times of welding when the fatigue tension value of the chopper at the second spot welding point reached 2.7g was significantly reduced. The fatigue tension value of the second spot welding point is better than that of the embodiment 5-6 when the welding times of the ceramic riving knife of the embodiment 2-3 are 120 ten thousand times, and the welding times when the fatigue tension value of the second spot welding point reaches a critical value of 2.7g are also better than that of the embodiment 5-6, which means that the average size of diamond grains of the micron diamond coating is controlled to be 2-4 mu m, the average thickness is controlled to be 5-10 mu m, the surface roughness Ra is controlled to be 0.8-2 mu m, the average size of diamond grains of the nanometer diamond coating is controlled to be 50-100nm, the average thickness is controlled to be 380-580nm, and the surface roughness Ra is controlled to be 0.2-0.3 mu m, thereby being beneficial to further improving the service performance of the riving knife, and leading the welding times of the riving knife to be higher when the fatigue tension value of the second spot welding point reaches the critical value of 2.7g when the welding times of 120 ten thousand times.
According to the performance detection data of the ceramic riving knife of the embodiment 7-10, the thickness of the aluminum nitride transition layer of the ceramic riving knife of the embodiment 7 is only 5nm, the transition layer deposited by adopting a chemical vapor deposition method is too thin and is not easy to densely cover a ceramic substrate, the coating adhesive force is low, and although the fatigue tension value of the second spot welding point in the initial welding process is 3.8g, the lead is broken due to the falling of the coating when the welding times reach 30 ten thousand times, and the riving knife is invalid. The welding times of the ceramic riving knife in the embodiment 8-9 when the fatigue tension value of the second spot welding point reaches the critical value of 2.7g are 2230 ten thousand times, the welding times of the ceramic riving knife in the embodiment 10 when the fatigue tension value of the second spot welding point reaches the critical value of 2.7g are 2180 ten thousand times, which is slightly lower than that of the ceramic riving knife in the embodiment 8-9, and the ceramic riving knife is more beneficial to prolonging the service life of the ceramic riving knife when the thickness of the aluminum nitride transition layer of the ceramic riving knife is 300-500nm.
By combining the performance detection data of the ceramic riving knife of the embodiment 11 and the embodiment 8, the fatigue tension value of the second spot welding point is 3.7g when the welding time of the ceramic riving knife of the embodiment 11 is 120 ten thousand times, and the welding time of 2200 ten thousand times when the fatigue tension value of the second spot welding point reaches the critical value of 2.7g is slightly lower than that of the embodiment 8, which shows that when the transition layer is a boride carbide transition layer, the effect is not as good as that of an aluminum nitride transition layer, but the ceramic riving knife still has longer service life.
In addition, according to various index data of the ceramic cleaver in the comparison example 2 and the example 1, the application can deposit a micron diamond coating on the end face of the welding nozzle of the ceramic cleaver, deposit a nano diamond coating on the surface of the inner hole of the welding nozzle, and deposit a transition layer between the micron diamond coating and the end face of the welding nozzle and between the nano diamond coating and the surface of the inner hole of the welding nozzle, so that the service life of the ceramic cleaver can be prolonged.
The present embodiment is merely illustrative of the present application and is not intended to be limiting, and a person skilled in the art, after having read the present specification, may make modifications to the present embodiment without creative contribution as required, but is protected by patent laws within the scope of the claims of the present application.
Claims (10)
1. The ceramic riving knife with the composite CVD diamond coating is characterized by comprising a riving knife body, an inner hole and a welding nozzle positioned at one end of the body, wherein the inner hole extends along the longitudinal axis direction of the riving knife body and is terminated at an inner chamfer of the welding nozzle; a micron diamond coating is deposited on the end face of the welding nozzle, and a nanometer diamond coating is deposited on the surface of the inner hole; and a transition layer is deposited between the micron diamond coating and the end face of the welding nozzle and between the nanometer diamond coating and the surface of the inner hole.
2. The ceramic cleaver with composite CVD diamond coating of claim 1, wherein the diamond grains of the microdiamond coating have an average size of 1-10 μιη and an average thickness of 1-15 μιη; the average size of diamond grains of the nano diamond coating is 5-500nm, and the average thickness is 50-1000nm.
3. The ceramic cleaver with composite CVD diamond coating according to claim 1 or 2, wherein the surface roughness Ra of the tip after deposition of the micro diamond coating is 0.5-4 μm; the surface roughness Ra of the inner hole after the nano diamond coating is deposited is less than or equal to 0.5 mu m.
4. A ceramic cleaver with a composite CVD diamond coating according to claim 1 or claim 2, wherein the transition layer is any one or more of a nitride transition layer, a carbide transition layer and a boride transition layer.
5. The ceramic cleaver with a composite CVD diamond coating of claim 4, wherein the transition layer is an aluminum nitride transition layer; the thickness of the aluminum nitride transition layer is 10-1000nm.
6. A method of preparing a ceramic cleaver with a composite CVD diamond coating according to any one of claims 1 to 5, comprising the following steps:
s1, cleaning an uncoated ceramic chopper;
s2, depositing a transition layer on the end face of the welding nozzle and the surface of the inner hole by adopting a chemical vapor deposition method;
and S3, respectively depositing the micro-diamond and the nano-diamond on the transition layer of the end face of the welding nozzle and the transition layer of the surface of the inner hole by adopting a chemical vapor deposition method to prepare the ceramic chopper.
7. The method of claim 6, wherein in step S2, the transition layer is an aluminum nitride transition layer, and the aluminum nitride transition layer is deposited by: introducing methane, hydrogen, argon and nitrogen at 1600-1900 ℃ for nitriding reaction, and depositing to obtain the aluminum nitride transition layer.
8. The method for manufacturing a ceramic cleaver with a composite CVD diamond coating according to claim 6 or 7, wherein the micro-diamond coating and the nano-diamond coating are manufactured by a one-time deposition method, the manufacturing method comprising the steps of: the chopper after the transition layer is deposited is vertically arranged on the sample stage, wherein the end face of the welding nozzle is positioned above; and then, discharging the mixed gas flow comprising hydrogen, argon and methane from top to bottom through the inner hole, and carrying out deposition reaction to prepare the micro-diamond coating and the nano-diamond coating.
9. The method of preparing a ceramic cleaver with a composite CVD diamond coating according to claim 8, wherein the deposition reaction conditions are: the temperature at the end face of the welding nozzle is controlled at 780-880 ℃, the hydrogen flow is 6-9SLM, the argon flow is 2.5-6SLM, and the methane flow is CH 4 /H 2 =1 to 3%, the chamber pressure of the deposition apparatus is 2.5 to 4.5kPa, and the gas input line pressure is 9.5 to 14.5kPa.
10. The method of claim 9, wherein the sample stage is water cooled during the deposition process.
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