CN117767891A - Ultra-wideband radio frequency power amplifier, radio frequency chip and electronic equipment - Google Patents
Ultra-wideband radio frequency power amplifier, radio frequency chip and electronic equipment Download PDFInfo
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Abstract
The invention provides an ultra-wideband radio frequency power amplifier, a radio frequency chip and electronic equipment, comprising: the input matching stabilizing module, the amplifying module and the negative feedback module; the input matching stabilizing module receives a radio frequency input signal and is used for carrying out impedance matching on the radio frequency input signal and the input end of the amplifying module and stabilizing and widening the working bandwidth of the ultra-wideband radio frequency power amplifier; the first end of the amplifying module is connected with the output end of the input matching stabilizing module, and the second end outputs the amplified radio frequency signal; the negative feedback module is connected with the amplifying module in parallel and is used for feeding back an output signal of the amplifying module to an input end of the amplifying module and reducing the output return loss value of the amplifying module. The invention is used for solving the problems of difficult expansion of working bandwidth, insufficient signal power level, insufficient stability, insufficient input/output return loss and the like of a broadband radio frequency front end chip in the prior art.
Description
Technical Field
The present invention relates to the field of signal transmission, and in particular, to an ultra wideband radio frequency power amplifier, a radio frequency chip, and an electronic device.
Background
Broadband radio frequency front end chips have long been studied and have been used in large scale as core devices in electronic warfare, military and civilian radar, and communication systems.
The signal amplification is a basic function in a radio frequency system, the radio frequency amplifier needs to amplify a wireless signal (100 dBm,3 uV) from very weak space at a receiving end, and needs to amplify a low-power level signal to be sent to a load such as an antenna at a transmitting end, and the core indexes of the power amplifier are output power, gain, power supply additional efficiency and linearity.
However, the existing broadband radio frequency front end chip has the problems of difficult expansion of working bandwidth, insufficient signal power level, stability risk, insufficient input/output return loss and the like.
Based on this, the present invention provides a new ultra wideband radio frequency power amplifier to solve the above problems.
It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present invention and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the invention section.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide an ultra-wideband rf power amplifier, an rf chip and an electronic device, which are used for solving the problems of difficulty in widening the working bandwidth, insufficient signal power level, stability risk, and insufficient input/output return loss of the wideband rf front-end chip in the prior art.
To achieve the above and other related objects, the present invention provides an ultra-wideband radio frequency power amplifier comprising: the input matching stabilizing module, the amplifying module and the negative feedback module;
the input matching stabilizing module receives a radio frequency input signal and is used for carrying out impedance matching on the input end of the amplifying module and stabilizing and widening the working bandwidth of the ultra-wideband radio frequency power amplifier;
the first end of the amplifying module is connected with the output end of the input matching stabilizing module, and the second end outputs an amplified radio frequency input signal which is used for amplifying the output signal of the input matching stabilizing module and outputting the amplified radio frequency input signal as an amplified signal;
the negative feedback module is connected with the amplifying module in parallel and is used for feeding back an output signal of the amplifying module to the input end of the amplifying module so as to reduce the output return loss value of the amplifying module.
Optionally, the input matching stabilization module includes an impedance matching unit, a stabilization unit, and a tuning unit; the impedance matching unit receives the radio frequency input signal, and is used for performing impedance matching on the radio frequency input signal and outputting an input matching signal; the tuning unit receives the input matching signal and outputs the input matching signal, and the tuning unit is used for counteracting parasitic capacitance of the amplifying module so as to widen the working bandwidth of the ultra-wideband radio frequency power amplifier; the stabilizing unit is connected with the output end of the tuning unit and is used for adjusting the damping of the impedance matching unit and outputting a signal with the adjusted damping as an output signal of the input matching stabilizing module.
Optionally, the impedance matching unit includes a first inductor, a second inductor, a first capacitor, and a first resistor; a first end of the first inductor receives the radio frequency input signal, and a second end outputs the input matching signal; a first end of the first capacitor is connected with a first end of the first inductor, and a second end of the first capacitor is connected to the reference ground through the first resistor; the first end of the second inductor is connected with the second end of the first inductor, and the second end of the second inductor is connected with the second end of the first capacitor.
Optionally, the stabilizing unit includes a second resistor and a second capacitor; the second resistor and the second capacitor are connected in parallel to form a parallel structure; the first end of the parallel structure is connected with the tuning unit, and the second end is used as the output end of the input matching stabilizing module.
Optionally, the tuning unit is configured as a tuning capacitor.
Optionally, the amplifying module includes N cascode transistors; n is an integer greater than or equal to 2; the source electrode of the (i+1) th stage transistor is connected with the drain electrode of the (i) th stage transistor, and the grid electrodes of the (i+1) th stage transistor are connected with corresponding grid voltages; i=1, 2, …, N-1; the source electrode of the first-stage transistor is connected to the reference ground, and the grid electrode of the first-stage transistor is connected with the output end of the input matching stabilizing module; the drain of the N-th transistor outputs the amplified signal.
Optionally, the amplifying module further includes a first gate power supply unit for supplying power to the gates of the first stage transistors, and N-1 second gate power supply units for supplying power to the gates of the i+1th stage transistors, respectively; the first grid power supply unit comprises a third resistor; the grid electrode of the first stage transistor is connected to a corresponding voltage signal through the third resistor; each second grid power supply unit comprises a fourth resistor, a fifth resistor and a third capacitor; the grid electrode of the (i+1) th stage transistor is connected to a corresponding voltage signal through a corresponding fourth resistor; the first end of each fifth resistor is connected with the grid electrode of the corresponding transistor, and the second end of each fifth resistor is connected with the reference ground through the corresponding third capacitor.
Optionally, the ultra-wideband radio frequency power amplifier further comprises a drain power supply unit for supplying power to the drain of the nth stage transistor.
Optionally, the drain power supply unit includes a fourth capacitor, a fifth capacitor and a third inductor; the first end of the third inductor is connected to the drain electrode of the N-th stage transistor, and the second end of the third inductor is connected to a corresponding voltage signal; the first polar plate of the fourth capacitor is connected to the second end of the third inductor, and the second polar plate is connected to the reference ground; the fifth capacitor is connected in parallel with the fourth capacitor.
Optionally, the ultra-wideband radio frequency power amplifier further comprises an output matching module; the output matching module is connected to the second end of the amplifying module and used for impedance matching of the output end of the amplifying module.
Optionally, the output matching module includes a fourth inductor and a seventh capacitor; the first end of the fourth inductor is connected with the second end of the amplifying module, and the second end outputs an output signal after impedance matching; the first polar plate of the seventh capacitor is connected with the second end of the fourth inductor, and the second polar plate is connected to the reference ground.
Optionally, the negative feedback module includes a sixth capacitor and a sixth resistor; the first end of the sixth resistor is connected to the drain electrode of the Nth transistor, and the second end of the sixth resistor is connected to the first polar plate of the sixth capacitor; the second plate of the sixth capacitor is connected to the input terminal of the amplifying module.
To achieve the above and other related objects, the present invention provides a radio frequency chip comprising: the ultra-wideband radio frequency power amplifier.
To achieve the above and other related objects, the present invention provides an electronic device comprising: peripheral circuits and the ultra-wideband radio frequency power amplifier; the peripheral circuit comprises a first blocking capacitor and a second blocking capacitor; the first blocking capacitor is arranged at the input end of the ultra-wideband radio frequency power amplifier; the second blocking capacitor is arranged at the output end of the ultra-wideband radio frequency power amplifier.
Optionally, the ultra-wideband radio frequency power amplifier is arranged on a radio frequency chip; the peripheral circuit is arranged at the periphery of the radio frequency chip, and the first blocking capacitor and the second blocking capacitor are connected to the radio frequency chip through bonding wires.
As described above, the ultra-wideband radio frequency power amplifier, the radio frequency chip and the electronic equipment have the following beneficial effects:
according to the ultra-wideband radio frequency power amplifier, the radio frequency chip and the electronic equipment, the output voltage is greatly improved under the condition that the output current is not influenced by constructing the field effect transistor stacking structure, so that the output power and the output gain of a circuit are improved, and the working voltage of the amplifier is improved; meanwhile, in order to ensure the stability of the input/output standing wave, the ultra-wideband radio frequency power amplifier, the radio frequency chip and the electronic equipment, the input matching stabilizing module and the negative feedback circuit are adopted, so that the output return loss is optimized, the input impedance matching with ultra-wideband high flatness is provided, the input return loss is optimized, and the stability of the ultra-wideband radio frequency power amplifier is improved.
Drawings
Fig. 1 is a schematic diagram of an ultra wideband rf power amplifier according to the present invention.
Fig. 2 is a schematic diagram of an ultra wideband rf power amplifier according to the present invention.
Fig. 3 shows a graph of S-coefficient for an ultra wideband radio frequency power amplifier of the present invention.
Fig. 4 is a graph showing the stability factor of the ultra wideband rf power amplifier of the present invention.
Fig. 5 is a graph showing the relationship between the saturated output power and the saturated power added efficiency of the ultra wideband rf power amplifier of the present invention and frequency, respectively.
Fig. 6 is a graph showing the relationship between the output power and the power added efficiency of the ultra wideband rf power amplifier of the present invention and the input power, respectively.
Description of element reference numerals
1-an ultra-wideband radio frequency power amplifier; 11-input matching stabilization module; a 111-impedance matching unit; 112-a stabilizing unit; 113-a tuning unit; 12-an amplifying module; 121-a first gate power supply unit; 122-a second gate power supply unit; 123-drain power supply unit; 13-a negative feedback module; 14-an output matching module.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Please refer to fig. 1-6. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
As shown in fig. 1, the present embodiment provides an ultra-wideband radio frequency power amplifier 1, including: the input matches the stabilization module 11, the amplification module 12 and the negative feedback module 13.
As shown in fig. 1-2, the input matching stabilizing module 11 receives a radio frequency input signal RFin, and is configured to perform impedance matching on the input end of the amplifying module 12 and simultaneously stably widen the working bandwidth of the ultra wideband radio frequency power amplifier 1.
Specifically, the input matching stabilization module 11 includes an impedance matching unit 111, a stabilization unit 112, and a tuning unit 113.
As an example, the impedance matching unit 111 receives the radio frequency input signal RFin, and is configured to perform impedance matching on the radio frequency input signal RFin and output an input matching signal.
In the present embodiment, the impedance matching unit 111 includes a first inductor L1, a second inductor L2, a first capacitor C1, and a first resistor R1; a first end of the first inductor L1 receives the radio frequency input signal RFin, and a second end outputs the matching signal; a first end of the first capacitor C1 is connected to a first end of the first inductor L1, and a second end is connected to the reference ground via the first resistor R1; the first end of the second inductor L2 is connected to the second end of the first inductor L1, and the second end is connected to the second end of the first capacitor C1.
As an example, the tuning unit 113 receives and outputs the input matching signal, for canceling the parasitic capacitance of the amplifying module 12, so as to widen the operating bandwidth of the ultra wideband radio frequency power amplifier 1.
In this embodiment, the tuning unit 113 is set to a tuning capacitance Ctune. In this embodiment, the amplifying module 12 includes at least N cascaded transistors (N is an integer greater than or equal to 2), and the gate-source parasitic capacitance Cgs of the first stage transistor will limit the expansion of the operating bandwidth of the ultra-wideband radio frequency power amplifier 1, so that the parasitic capacitance of the amplifying module 12 mainly counteracts the gate-source parasitic capacitance Cgs of the first stage transistor, and therefore, by setting the tuning capacitor Ctune, a part of the gate-source parasitic capacitance Cgs from the first stage transistor can be effectively absorbed, so that the operating bandwidth of the impedance matching unit 111 is improved. In addition, in the present embodiment, the tuning capacitor Ctune is provided to perform capacitance absorption and compensation, and the influence of the capacitance adjustment gain of the stabilizing unit 112 can be avoided.
It should be noted that, the specific structure of the tuning unit 113 is not limited to the embodiment, and any structure that can cancel the influence of the capacitance adjustment gain of the subsequent connection structure and the parasitic capacitance influence of the amplifying module 12 is the protection scope of the embodiment.
As an example, the stabilizing unit 112 is connected to an output terminal of the tuning unit 113, and is configured to adjust damping of the impedance matching unit 111 and output a signal with the adjusted damping as an output signal input to the matching stabilizing module 11.
In this embodiment, the stabilizing unit 112 includes a second resistor R2 and a second capacitor C2; the second resistor R2 and the second capacitor C2 are connected in parallel to form a parallel structure; the first end of the parallel structure is connected with the tuning unit 113, and the second end is used as the output end of the input matching stabilization module. In the present embodiment, the resistance value of the first resistor R1 in the impedance matching unit 111 is set to a fixed value (as in some examples, the resistance value of the first resistor R1 is set to 50Ω), at this time, since the input topology damping of the impedance matching unit 111 is difficult to tune, it further causes the stability coefficient of the input matching stabilization module 11 to be difficult to optimize, that is: the system stability is not enough but cannot be adjusted in time; meanwhile, since the tuning unit 113 is provided to further increase the operating bandwidth of the impedance matching unit 111, stability risks need to be considered while the bandwidth is increased. Based on this, the stabilizing unit 112 of the present embodiment is provided to achieve damping adjustability of the impedance matching unit 111, and optimize the input return loss and high frequency gain.
It should be noted that, the stabilizing unit 112 is not limited to the present embodiment, and any structure that adjusts the damping of the impedance matching unit 111 and outputs the damping is the protection scope of the present embodiment.
The implementation principles and parameters of the impedance matching unit 111, the stabilizing unit 112, and the tuning unit 113 in the present embodiment are correspondingly described below:
in this embodiment, as shown in fig. 2, the impedance matching unit 111 includes a first inductor L1, a second inductor L2, a first capacitor C1 and a first resistor R1, the stabilizing unit 112 includes a second resistor R2 and a second capacitor C2, and the tuning unit 113 includes a tuning capacitor Ctune, where the device parameters of the above elements can be obtained by the following formula:
R1= Z0（1）
wherein R1 is the resistance value of the first resistor, Z 0 The characteristic impedance is a normal standard value, which is usually constant and real, and is set to 50Ω in the present embodiment, but may be set to 75Ω, 100deg.OMEGA, 600Ω, or the like in practice, and is not limited to the present embodiment.
Cin_eff=Cgs·Ctune/（Cgs+Ctune）（2）
Where cin_eff is an equivalent capacitance after absorbing the parasitic capacitance of the amplifying module 12, cgs is an input parasitic capacitance (in this embodiment, the gate-source parasitic capacitance of the first stage transistor M1), and Ctune is a capacitance value of the tuning capacitance.
L1=(1-(R2+R1p)/R1)R1 2 Cin_eff/2（3）
Where L1 is the inductance value of the first inductor, R2 is the resistance value of the second resistor, R1 is the resistance value of the first resistor, and R1p is the input parasitic resistor (in this embodiment, the parasitic resistor of the first stage transistor M1).
L2=(1+(R2+R1p)/R1)R1 2 Cin_eff/2（4）
Wherein L2 is the inductance value of the second inductor.
C1=(1-(R2+R1p)/R1 2 )Cin_eff/4（5）
Wherein C1 is the capacitance of the first capacitor.
Compared with the existing radio frequency power amplifier, the parameters of each element are set based on the formulas (1) - (5), so that the ultra-wideband radio frequency power amplifier 1 of the embodiment can further realize adjustable input damping, better system stability and optimized input return loss and high-frequency gain of the system on the premise of improving the amplification factor (namely, realizing effective lifting of output power). Compared with the rf power amplifier in which the phase in the amplifying module 12 is only improved to increase the amplification factor in a comparative example, the input matching stabilizing module of the ultra-wideband rf power amplifier 1 of the present embodiment is more stable and has adjustable damping, and has better rf signal transmission effect.
As shown in fig. 1-2, the first end of the amplifying module 12 is connected to the output end of the input matching stabilizing module 11, and the second end outputs an amplified radio frequency input signal, which is used for amplifying the output signal of the input matching stabilizing module and outputting the amplified radio frequency input signal as an amplified signal.
Specifically, the amplifying module 12 includes N cascode transistors; n is an integer greater than or equal to 2; the source electrode of the (i+1) th stage transistor is connected with the drain electrode of the (i) th stage transistor, and the grid electrodes of the (i+1) th stage transistor are connected with corresponding grid voltages; i=1, 2, …, N-1. The source electrode of the first-stage transistor M1 is connected to the reference ground, and the grid electrode is connected with the output end of the input matching stabilization module 11; the drain of the nth stage transistor (in this embodiment, N is 3, the third stage transistor M3) outputs the amplified signal.
Specifically, the amplifying module 12 further includes a first gate power supply unit 121 for supplying power to the gate of the first stage transistor M1, and N-1 second gate power supply units 122 for supplying power to the gates of the i+1th stage transistors, respectively; wherein the first gate power supply unit 121 includes a third resistor R3; the grid electrode of the first-stage transistor M1 is connected to a corresponding voltage signal through the third resistor R3; each of the second gate power supply units 122 includes a fourth resistor R4, a fifth resistor R5, and a third capacitor C3; the grid electrode of the (i+1) th stage transistor is connected to a corresponding voltage signal through a corresponding fourth resistor R4; the first end of each fifth resistor R5 is connected to the gate of the corresponding transistor, and the second end is connected to the ground via the corresponding third capacitor C3.
As an example, the amplifying module 12 is provided in the present embodiment to include 3 transistors (the first stage transistor M1, the second stage transistor M2, and the third stage transistor M3 in the present embodiment). Wherein, each transistor is cascade connection in proper order: the drain electrode of the first-stage transistor M1 is connected with the source electrode of the second transistor M2; the drain of the second transistor M2 is connected to the source of the third transistor M3. The source of the first transistor M1 is connected to the ground, and the drain of the third transistor M3 outputs the amplified signal. In this embodiment, the gates of the first stage transistor M1, the second stage transistor M2 and the third stage transistor M3 are provided with different biases, so that the transistors are correspondingly turned on and signal amplification is completed. The output signal of the input matching stabilizing module is input by the grid electrode of the common source transistor (the first stage transistor M1), amplified by the common source transistor (the first stage transistor M1), output from the drain electrode of the common source transistor (the first stage transistor M1) to the source electrode of the common gate transistor (the second stage transistor M2), amplified by the common gate transistor (the second stage transistor M2), output from the drain electrode of the common gate transistor (the second stage transistor M2) to the source electrode of the common gate transistor (the third stage transistor M3), amplified by the common gate transistor (the third stage transistor M3), and output of the radio frequency signal from the drain electrode of the common gate transistor (the third stage transistor M3), compared with the case that one transistor performs the amplifying function, at least more than two transistors are arranged in the embodiment, so that the output power of the ultra-wideband radio frequency power amplifier 1 is larger.
It should be noted that, since the plurality of transistors are configured to amplify in this embodiment, the problem of system stability and the like caused by the configuration of the plurality of transistors need to be considered, so this embodiment overcomes the above problem by configuring the input matching stabilization module 11, and specific processes are described in the foregoing, and are not repeated here.
It should be further noted that the specific structure of the amplifying module 12 is not limited to the embodiment, and any arrangement capable of amplifying the radio frequency signal multiple times is the protection scope of the embodiment.
Specifically, the amplifying module 12 further includes a drain power supply unit 123 for supplying power to the drain of the nth stage transistor.
As an example, the drain power supply unit 123 includes a fourth capacitor C4, a fifth capacitor C5, and a third inductor L3; the first end of the third inductor L3 is connected to the drain of the nth stage transistor (the third transistor M3 in the present embodiment), and the second end is connected to the corresponding voltage signal; the first polar plate of the fourth capacitor C4 is connected to the second end of the third inductor L3, and the second polar plate is connected to the reference ground; the fifth capacitor C5 is connected in parallel with the fourth capacitor C4.
In the present embodiment, the drain power supply unit 123 supplies power to the drain of the third transistor M3, and since the third transistor M3 is a common source transistor, a predetermined voltage is set at the gate and the drain to ensure the amplifying effect of the amplifying module 13. In addition, the specific structure of the drain power supply unit 123 is not limited to this embodiment, and any arrangement that can supply power to the drain of the last stage transistor is the protection scope of this embodiment.
As shown in fig. 1-2, the negative feedback module 13 is connected in parallel with the amplifying module 12, and is configured to feedback an output signal of the amplifying module 12 and output the feedback signal to an input end of the amplifying module 12, so as to reduce an output return loss value of the amplifying module 12.
Specifically, in the present embodiment, the negative feedback module 13 includes a sixth capacitor C6 and a sixth resistor R6; the first end of the sixth resistor R6 is connected to the drain electrode of the nth transistor (the third transistor M3 in the present embodiment), and the second end is connected to the first plate of the sixth capacitor C6; the second plate of the sixth capacitor C6 is connected to the input of the amplifying module 12.
In this embodiment, in order to enable the ultra wideband rf power amplifier 1 to obtain a sufficient driving output, the standing wave characteristic of the output of the amplifying module 12 of this embodiment is required to be at least lower than-10 dB to ensure that the input impedance of the subsequent stage of power amplifier is not biased. Therefore, by providing the negative feedback structure, the drain output of the third transistor M3 of the present embodiment can be sensed and fed back to the input end of the amplifying module 12, so as to optimize the output standing wave of each cascaded transistor in the amplifying module 12.
Note that, the return loss refers to the ratio between the incident power and the reflected power, which is usually a negative number, and the larger the return loss is, the better the matching is; therefore, the smaller the value of the output return loss, the larger the absolute value of the output return loss, indicating that the matching effect is better. The ultra-wideband radio frequency power amplifier provided by the embodiment can realize better matching effect so as to improve the amplification factor.
It should be further described that, compared with other ultra-wideband architectures, the structure that the bandwidth of the power amplifier is extended by introducing the negative feedback structure generally causes deterioration of output power and efficiency, however, the negative feedback module and the input matching stabilization module of the embodiment have synergistic effect, so that the bandwidth of the power amplifier is extended without any influence on output matching, that is, the bandwidth is extended, the output power and efficiency are not deteriorated, and the output return loss is optimized; in addition, the negative feedback module does not need to expand bandwidth, so that output return loss can be optimized as much as possible, output power and efficiency are not influenced, and a good linkage effect matched with input is finally formed.
As shown in fig. 1-2, the ultra-wideband radio frequency power amplifier 1 further includes an output matching module 14; the output matching module 14 is connected to the second end of the amplifying module 12, and is used for impedance matching the output end of the amplifying module 12.
Specifically, the output matching module 14 includes a fourth inductor L4 and a seventh capacitor C7; the first end of the fourth inductor L4 is connected to the second end of the amplifying module 12, and the second end outputs an output signal after impedance matching; the first polar plate of the seventh capacitor C7 is connected to the second end of the fourth inductor L4, and the second polar plate is connected to the reference ground. The output end of the amplifying module 12 is matched to a high load by the output matching module 14 of the present embodiment, so as to achieve the effect of high-efficiency amplification.
The following describes the parameters of the ultra wideband radio frequency power amplifier 1 of the present embodiment with reference to fig. 3 to 6. As shown in fig. 3, the S parameter (i.e., information including the amplitude and phase of the signal) of the present embodiment. Where in Spq, p represents an output port number, and q represents an output port number, such as: s11 represents the ratio of the reflected wave of port 1 to the incident wave in the case where the output port is 1 (the reflected wave of port 1) and the input port is 1 (the incident wave of port 1). As shown in FIG. 3, the S parameters of the ultra-wideband radio frequency power amplifier 1 in this embodiment are slowly maintained at 20dB along with the increase of frequency, the S22 parameters are fluctuated within the range of-35 dB to-15 dB, and the S11 is slowly increased within the range of-35 dB to-25 dB. Therefore, the S21 parameter of the ultra-wideband rf power amplifier 1 of the present embodiment indicates that the gain flatness is good, and the input/output return loss meets the use requirement.
As shown in fig. 4, the stability value K of the present embodiment indicates the stability of the system, and generally, a value higher than 1 indicates that the power amplifier is relatively stable. In this embodiment, as the frequency increases, the K value is maintained to decrease first and then increase, and the range is 2-10, so that the circuit stability is better than that of the ultra-wideband rf power amplifier 1 without using this embodiment.
As shown in fig. 5, the saturated output power of the present embodiment is maintained at about 32dBm, the power added efficiency is maintained at about 60-40%, and the average power added efficiency in the full operating frequency range is about 52%. Therefore, the saturated output power and the power additional efficiency value indicate that the ultra-wideband radio frequency power amplifier 1 of the embodiment can realize ultra-wideband efficient and flat amplification of the input signal.
As shown in fig. 6, the output power of the embodiment starts to be compressed at the frequency point of the working frequency 1GHz at the gain of 13dBm of the input power, and the output power at this time is 31dBm, which is close to power saturation, and the saturation output efficiency is 56%, which indicates that the ultra-wideband radio frequency power amplifier 1 of the embodiment has good linearity while amplifying the input signal with high efficiency.
As shown in fig. 1, this embodiment also provides a radio frequency chip, which includes the above ultra wideband radio frequency power amplifier.
In particular, in the present embodiment, the HEMT is a core device in the advanced rf microwave/millimeter wave module, component and system nowadays because the HEMT is a High Electron Mobility Transistor (HEMT) based on two-dimensional electron gas (2 DEG) and has excellent performance such as power, efficiency, noise and linearity. The signal amplification is a basic function in a radio frequency system, the radio frequency amplifier needs to amplify a wireless signal (100 dBm,3 uV) from very weak space at a receiving end, and needs to amplify a low-power level signal at a transmitting end to send the signal to a load such as an antenna and the like, and the core indexes of the power amplifier are output power, gain, power supply additional efficiency and linearity. Therefore, the radio frequency chip provided by the embodiment can amplify signals better, can effectively improve the output power, gain, power supply additional efficiency and linearity of signal amplification in the radio frequency field, and can be popularized and applied in a large scale in the signal transmission field.
As shown in fig. 1-2, the present embodiment further provides an electronic device, which includes a peripheral circuit and the above-mentioned ultra-wideband rf power amplifier 1.
Specifically, the peripheral circuit includes a first blocking capacitor C Block1 Second blocking capacitor C Block2 The method comprises the steps of carrying out a first treatment on the surface of the The first blocking capacitor C Block1 The ultra-wideband radio frequency power amplifier 1 is arranged at the input end of the ultra-wideband radio frequency power amplifier; the second blocking capacitor is arranged at the output end C of the ultra-wideband radio frequency power amplifier Block2
As a first example, the ultra wideband radio frequency power amplifier 1 is provided on a radio frequency chip; the peripheral circuit is arranged at the periphery of the radio frequency chip and the first blocking capacitor C Block1 The second blocking capacitor C Block2 Are connected to the radio frequency chip by bond wires. In this embodiment, the first blocking capacitor C Block1 The ultra-wideband radio frequency power amplifier is connected to the input end of the ultra-wideband radio frequency power amplifier 1 through a first bonding wire Bondwire 1; the saidSecond blocking capacitor C Block2 And the output end of the ultra-wideband radio frequency power amplifier 1 is connected to the second bonding wire Bondwire 2.
In a second example, as shown in fig. 2, the gate power supply unit 123 in the ultra-wideband rf power amplifier 1 is disposed outside the rf chip, and the gate power supply unit 123 is connected to the output end of the amplifying module 12 through a second bonding wire bond 2.
It should be noted that the peripheral circuit may be configured in other structures, and is not limited to the present embodiment.
It should be further noted that, the electronic device of the embodiment may be used as a testing device for testing a part of components requiring radio frequency signals as test inputs, so as to obtain corresponding test data; the electronic device of the present embodiment may also be a transceiver, that is, the transceiver includes the ultra wideband rf power amplifier 1 provided in the present embodiment. In fact, the electronic device of the present embodiment may also be any corresponding device including a peripheral circuit and the circuit of the above-mentioned ultra wideband radio frequency power amplifier 1, which is not limited to the present embodiment.
In summary, the present invention provides an ultra wideband radio frequency power amplifier, comprising: the input matching stabilizing module, the amplifying module and the negative feedback module; the input matching stabilizing module receives a radio frequency input signal and is used for carrying out impedance matching on the radio frequency input signal and widening the working bandwidth of the ultra-wideband radio frequency power amplifier; the negative feedback module is connected with the amplifying module in parallel and is used for sensing the output signal of the amplifying module and outputting the output signal to the input end of the amplifying module so as to reduce the output standing wave of the amplifying module. The invention is used for solving the problems of incapability of widening the working bandwidth, insufficient signal amplification factor, insufficient stability risk, input return loss and the like of a broadband radio frequency front end chip in the prior art. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (15)
1. An ultra-wideband radio frequency power amplifier, characterized in that it comprises at least: the input matching stabilizing module, the amplifying module and the negative feedback module;
the input matching stabilizing module receives a radio frequency input signal and is used for carrying out impedance matching on the input end of the amplifying module and stabilizing and widening the working bandwidth of the ultra-wideband radio frequency power amplifier;
the first end of the amplifying module is connected with the output end of the input matching stabilizing module, and the second end outputs an amplified radio frequency input signal which is used for amplifying the output signal of the input matching stabilizing module and outputting the amplified radio frequency input signal as an amplified signal;
the negative feedback module is connected with the amplifying module in parallel and is used for feeding back an output signal of the amplifying module to the input end of the amplifying module so as to reduce the output return loss value of the amplifying module.
2. The ultra wideband radio frequency power amplifier of claim 1, wherein: the input matching stabilization module comprises an impedance matching unit, a stabilization unit and a tuning unit;
the impedance matching unit receives the radio frequency input signal, and is used for performing impedance matching on the radio frequency input signal and outputting an input matching signal;
the tuning unit receives the input matching signal and outputs the input matching signal, and the tuning unit is used for counteracting parasitic capacitance of the amplifying module so as to widen the working bandwidth of the ultra-wideband radio frequency power amplifier;
the stabilizing unit is connected with the output end of the tuning unit and is used for adjusting the damping of the impedance matching unit and outputting a signal with the adjusted damping as an output signal of the input matching stabilizing module.
3. The ultra wideband radio frequency power amplifier of claim 2, wherein: the impedance matching unit comprises a first inductor, a second inductor, a first capacitor and a first resistor;
a first end of the first inductor receives the radio frequency input signal, and a second end outputs the input matching signal;
a first end of the first capacitor is connected with a first end of the first inductor, and a second end of the first capacitor is connected to the reference ground through the first resistor;
the first end of the second inductor is connected with the second end of the first inductor, and the second end of the second inductor is connected with the second end of the first capacitor.
4. The ultra wideband radio frequency power amplifier of claim 2, wherein: the stabilizing unit comprises a second resistor and a second capacitor;
the second resistor and the second capacitor are connected in parallel to form a parallel structure; the first end of the parallel structure is connected with the tuning unit, and the second end is used as the output end of the input matching stabilizing module.
5. The ultra wideband radio frequency power amplifier of claim 2, wherein: the tuning unit is arranged as a tuning capacitor.
6. The ultra wideband radio frequency power amplifier of claim 1, wherein: the amplifying module comprises N cascading transistors; n is an integer greater than or equal to 2;
the source electrode of the (i+1) th stage transistor is connected with the drain electrode of the (i) th stage transistor, and the grid electrodes of the (i+1) th stage transistor are connected with corresponding grid voltages; i=1, 2, …, N-1;
the source electrode of the first-stage transistor is connected to the reference ground, and the grid electrode of the first-stage transistor is connected with the output end of the input matching stabilizing module; the drain of the N-th transistor outputs the amplified signal.
7. The ultra wideband radio frequency power amplifier of claim 6, wherein: the amplifying module further comprises a first grid power supply unit for supplying power to the grid of the first-stage transistor, and N-1 second grid power supply units for supplying power to the grid of the (i+1) th-stage transistor respectively;
the first grid power supply unit comprises a third resistor; the grid electrode of the first stage transistor is connected to a corresponding voltage signal through the third resistor;
each second grid power supply unit comprises a fourth resistor, a fifth resistor and a third capacitor; the grid electrode of the (i+1) th stage transistor is connected to a corresponding voltage signal through a corresponding fourth resistor; the first end of each fifth resistor is connected with the grid electrode of the corresponding transistor, and the second end of each fifth resistor is connected with the reference ground through the corresponding third capacitor.
8. The ultra wideband radio frequency power amplifier of claim 6, wherein: the ultra-wideband radio frequency power amplifier further comprises a drain power supply unit for supplying power to the drain of the N-th stage transistor.
9. The ultra wideband radio frequency power amplifier of claim 8, wherein: the drain power supply unit comprises a fourth capacitor, a fifth capacitor and a third inductor;
the first end of the third inductor is connected to the drain electrode of the N-th stage transistor, and the second end of the third inductor is connected to a corresponding voltage signal;
the first polar plate of the fourth capacitor is connected to the second end of the third inductor, and the second polar plate is connected to the reference ground;
the fifth capacitor is connected in parallel with the fourth capacitor.
10. The ultra wideband radio frequency power amplifier of claim 1, wherein: the ultra-wideband radio frequency power amplifier further comprises an output matching module; the output matching module is connected to the second end of the amplifying module and used for impedance matching of the output end of the amplifying module.
11. The ultra wideband radio frequency power amplifier of claim 10, wherein: the output matching module comprises a fourth inductor and a seventh capacitor;
the first end of the fourth inductor is connected with the second end of the amplifying module, and the second end outputs an output signal after impedance matching; the first polar plate of the seventh capacitor is connected with the second end of the fourth inductor, and the second polar plate is connected to the reference ground.
12. The ultra-wideband radio frequency power amplifier according to any one of claims 1-11, wherein: the negative feedback module comprises a sixth capacitor and a sixth resistor;
the first end of the sixth resistor is connected to the drain electrode of the Nth transistor, and the second end of the sixth resistor is connected to the first polar plate of the sixth capacitor;
the second plate of the sixth capacitor is connected to the input terminal of the amplifying module.
13. A radio frequency chip, characterized by: the radio frequency chip comprises the ultra-wideband radio frequency power amplifier according to any one of claims 1-12.
14. An electronic device, characterized in that: the electronic device comprising a peripheral circuit and an ultra wideband radio frequency power amplifier as claimed in any one of claims 1 to 12; the peripheral circuit comprises a first blocking capacitor and a second blocking capacitor; the first blocking capacitor is arranged at the input end of the ultra-wideband radio frequency power amplifier; the second blocking capacitor is arranged at the output end of the ultra-wideband radio frequency power amplifier.
15. The electronic device of claim 14, wherein: the ultra-wideband radio frequency power amplifier is arranged on the radio frequency chip; the peripheral circuit is arranged at the periphery of the radio frequency chip, and the first blocking capacitor and the second blocking capacitor are connected to the radio frequency chip through bonding wires.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070024377A1 (en) * | 2005-07-28 | 2007-02-01 | Xuezhen Wang | Impedance matching techiques for multi-band or wideband RF amplifiers and associated amplifier designs |
| CN115296621A (en) * | 2022-08-15 | 2022-11-04 | 电子科技大学 | Ultra-wideband low-noise amplifier based on gate-source low-coupling structure |
| CN115412037A (en) * | 2022-09-26 | 2022-11-29 | 杭州电子科技大学富阳电子信息研究院有限公司 | Parallel negative feedback ultra-wideband low-noise amplifier based on cross-junction type microstrip matching |
| CN115441842A (en) * | 2022-09-21 | 2022-12-06 | 杭州电子科技大学富阳电子信息研究院有限公司 | Negative feedback ultra-wideband low-noise amplifier circuit and design method thereof |
| CN218387447U (en) * | 2022-09-26 | 2023-01-24 | 杭州步越辰芯科技有限公司 | Parallel negative feedback ultra-wideband low-noise amplifier based on cross-junction type microstrip matching |
| CN116865690A (en) * | 2023-07-20 | 2023-10-10 | 湖北大学 | Ultra-wideband low-power-consumption compact low-noise amplifier based on asymmetric transformer |
-
2024
- 2024-02-20 CN CN202410187668.5A patent/CN117767891A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070024377A1 (en) * | 2005-07-28 | 2007-02-01 | Xuezhen Wang | Impedance matching techiques for multi-band or wideband RF amplifiers and associated amplifier designs |
| CN115296621A (en) * | 2022-08-15 | 2022-11-04 | 电子科技大学 | Ultra-wideband low-noise amplifier based on gate-source low-coupling structure |
| CN115441842A (en) * | 2022-09-21 | 2022-12-06 | 杭州电子科技大学富阳电子信息研究院有限公司 | Negative feedback ultra-wideband low-noise amplifier circuit and design method thereof |
| CN115412037A (en) * | 2022-09-26 | 2022-11-29 | 杭州电子科技大学富阳电子信息研究院有限公司 | Parallel negative feedback ultra-wideband low-noise amplifier based on cross-junction type microstrip matching |
| CN218387447U (en) * | 2022-09-26 | 2023-01-24 | 杭州步越辰芯科技有限公司 | Parallel negative feedback ultra-wideband low-noise amplifier based on cross-junction type microstrip matching |
| CN116865690A (en) * | 2023-07-20 | 2023-10-10 | 湖北大学 | Ultra-wideband low-power-consumption compact low-noise amplifier based on asymmetric transformer |
Non-Patent Citations (2)
| Title |
|---|
| HUACHENG, L. ET AL: "Intermodulation distortion optimization strategy based on active negative feedback in ultra-wideband low-power amplifiers", 《2023 IEEE 6TH INTERNATIONAL CONFERENCE ON INFORMATION SYSTEMS AND COMPUTER AIDED EDUCATION (ICISCAE)》, 31 December 2023 (2023-12-31), pages 1006 - 9 * |
| 吴佳倩: "超宽带CMOS限幅器和低噪声放大器的集成设计", 《中国优秀硕士学位论文全文数据库（电子期刊）》, vol. 2020, no. 01, 15 January 2020 (2020-01-15) * |
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