CN117762853A - An efficient SPI data transmission connection method for improving the frame rate of TFT display screens - Google Patents
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Abstract
Description
技术领域Technical field
本发明涉及电子通信技术领域,更具体地说,涉及一种用于提高TFT显示屏帧率的高效SPI数据传输连接方式。The present invention relates to the field of electronic communication technology, and more specifically, to an efficient SPI data transmission connection method for improving the frame rate of a TFT display screen.
背景技术Background technique
现代电子设备中,薄膜晶体管(TFT)显示屏因其出色的显示特性而被广泛采用。为了驱动这些显示屏,微处理器单元(MCU)需要处理和传输大量图像数据。通常,这一过程涉及至少两路高速串行外设接口(SPI):一路连接TFT屏,负责送出显示数据;另一路连接外部Flash存储器,负责读取存储的图像数据。为了优化显示效果和减少数据传输次数,MCU还需内嵌较大容量的RAM以暂存数据。In modern electronic devices, thin film transistor (TFT) displays are widely used due to their excellent display characteristics. To drive these displays, microprocessor units (MCUs) need to process and transmit large amounts of image data. Usually, this process involves at least two high-speed serial peripheral interfaces (SPI): one is connected to the TFT screen and is responsible for sending out display data; the other is connected to the external Flash memory and is responsible for reading the stored image data. In order to optimize the display effect and reduce the number of data transmissions, the MCU also needs to embed a larger-capacity RAM to temporarily store data.
在现有技术中,驱动TFT显示屏通常要求微处理器单元(MCU)具备两路高速串行外设接口(SPI):一路连接TFT显示屏以传输显示数据,另一路连接外部Flash存储器以读取图像数据。为减少数据搬运次数,MCU还需要较大的RAM资源。在这一配置下,MCU需先从外部Flash通过SPI读取数据,然后存入内部RAM,再通过另一路SPI将数据传输到TFT显示屏。这种方案虽然可行,但存在诸多缺点,如对MCU性能要求高,芯片管脚损耗多,以及通信效率低下。In the existing technology, driving a TFT display usually requires a microprocessor unit (MCU) to have two high-speed serial peripheral interfaces (SPI): one is connected to the TFT display to transmit display data, and the other is connected to an external Flash memory to read Get image data. In order to reduce the number of data transfers, the MCU also requires larger RAM resources. In this configuration, the MCU needs to first read data from the external Flash through SPI, then store it in the internal RAM, and then transmit the data to the TFT display through another SPI. Although this solution is feasible, it has many shortcomings, such as high MCU performance requirements, high chip pin losses, and low communication efficiency.
因此,针对上述技术问题,有必要提供一种用于提高TFT显示屏帧率的高效SPI数据传输连接方式。Therefore, in response to the above technical problems, it is necessary to provide an efficient SPI data transmission connection method for improving the frame rate of TFT display screens.
发明内容Contents of the invention
本发明的目的在于提供一种用于提高TFT显示屏帧率的高效SPI数据传输连接方式,以解决上述的问题。The purpose of the present invention is to provide an efficient SPI data transmission connection method for improving the frame rate of a TFT display screen, so as to solve the above problems.
为了实现上述目的,本发明一实施例提供的技术方案如下:In order to achieve the above object, the technical solution provided by an embodiment of the present invention is as follows:
一种用于提高TFT显示屏帧率的高效SPI数据传输连接方式,包括:An efficient SPI data transmission connection method for improving the frame rate of TFT displays, including:
微控制单元(MCU);Microcontroller unit (MCU);
所述微控制单元(MCU)具有正电源输入引脚(VDD)和接地引脚(VSS),所述微控制单元(MCU)的正电源输入引脚(VDD)连接至正电源电压(VCC),所述微控制单元(MCU)的接地引脚(VSS)连接至接地(GND);The micro control unit (MCU) has a positive power input pin (VDD) and a ground pin (VSS), and the positive power input pin (VDD) of the micro control unit (MCU) is connected to the positive power voltage (VCC) , the ground pin (VSS) of the micro control unit (MCU) is connected to the ground (GND);
外部Flash存储器;External Flash memory;
所述外部Flash存储器设置有多个引脚,所述外部Flash存储器的接地(GND)引脚连接至一个公共接地,所述外部Flash存储器的电源(VCC)引脚连接至正电源电压(VCC),所述外部Flash存储器的数据输出(DO)引脚通过一个上拉电阻(R2)连接至正电源电压(VCC),所述上拉电阻(R2)的电阻值为4.7千欧姆,所述外部Flash存储器的片选(CS#)引脚通过一个上拉电阻(R3)连接至正电源电压(VCC),所述上拉电阻(R3)的电阻值为4.7千欧姆,所述外部Flash存储器的数据输入(DI)引脚通过一个限流电阻(R5)连接至外部Flash存储器的数据输出(DO)引脚,所述限流电阻(R5)的电阻值为360欧姆;The external Flash memory is provided with multiple pins, the ground (GND) pin of the external Flash memory is connected to a common ground, and the power supply (VCC) pin of the external Flash memory is connected to the positive power supply voltage (VCC) , the data output (DO) pin of the external Flash memory is connected to the positive power supply voltage (VCC) through a pull-up resistor (R2), the resistance value of the pull-up resistor (R2) is 4.7 kΩ, and the external The chip select (CS#) pin of the flash memory is connected to the positive supply voltage (VCC) through a pull-up resistor (R3). The resistance value of the pull-up resistor (R3) is 4.7 kΩ. The resistance of the external flash memory The data input (DI) pin is connected to the data output (DO) pin of the external Flash memory through a current limiting resistor (R5), the resistance value of the current limiting resistor (R5) is 360 ohms;
TFT屏幕;TFT screen;
所述TFT屏幕具有第1引脚至第13引脚,所述第9引脚和第10引脚均与正电源电压(VCC)连接,所述第8引脚、第11引脚和第13引脚均连接至接地(GND),所述正电源电压(VCC)与所述第12引脚之间通过一个电阻元件(R1)连接,所述电阻元件(R1)为51欧姆(51R),所述正电源电压(VCC)通过一个电容元件(C1)连接至接地(GND),所述电容元件(C1)为1微法拉(1uF)。The TFT screen has pins 1 to 13, the 9th pin and the 10th pin are connected to the positive power supply voltage (VCC), the 8th pin, the 11th pin and the 13th pin The pins are all connected to ground (GND). The positive power supply voltage (VCC) and the 12th pin are connected through a resistor element (R1). The resistor element (R1) is 51 ohms (51R). The positive supply voltage (VCC) is connected to ground (GND) through a capacitive element (C1), which is 1 microfarad (1uF).
作为本发明的进一步改进,所述微控制单元(MCU)通过单一串行外设接口(SPI)与外部Flash存储器和TFT屏幕连接。As a further improvement of the present invention, the micro control unit (MCU) is connected to the external Flash memory and TFT screen through a single serial peripheral interface (SPI).
作为本发明的进一步改进,所述微控制单元(MCU)的SPI时钟线(SPI_SCK)连接到外部Flash存储器的时钟输入(SCK)和TFT屏幕的时钟输入(SCK)。As a further improvement of the present invention, the SPI clock line (SPI_SCK) of the micro control unit (MCU) is connected to the clock input (SCK) of the external Flash memory and the clock input (SCK) of the TFT screen.
作为本发明的进一步改进,所述微控制单元(MCU)的主输出从输入线(SPI_MOSI)与主输入从输出线(SPI_MISO)相连,并且共同连接到外部Flash存储器的主输入从输出线(MISO)和TFT屏幕的主输出从输入线(MOSI)。As a further improvement of the present invention, the master output slave input line (SPI_MOSI) of the micro control unit (MCU) is connected to the master input slave output line (SPI_MISO), and is jointly connected to the master input slave output line (MISO) of the external Flash memory. ) and the master output slave input line (MOSI) of the TFT screen.
作为本发明的进一步改进,所述外部Flash存储器和TFT屏幕的片选线(CS)分别连接到MCU的不同I/O端口。As a further improvement of the present invention, the chip select lines (CS) of the external Flash memory and the TFT screen are respectively connected to different I/O ports of the MCU.
作为本发明的进一步改进,所述微控制单元(MCU)在与外部Flash存储器通信时能够使能外部Flash存储器的片选线(CS),同时失能TFT屏幕的片选线(CS)。As a further improvement of the present invention, the micro control unit (MCU) can enable the chip select line (CS) of the external Flash memory and simultaneously disable the chip select line (CS) of the TFT screen when communicating with the external Flash memory.
作为本发明的进一步改进,所述微控制单元(MCU)在与TFT屏幕通信时能够使能TFT屏幕的片选线(CS),同时失能外部Flash存储器的片选线(CS)。As a further improvement of the present invention, the micro control unit (MCU) can enable the chip select line (CS) of the TFT screen and simultaneously disable the chip select line (CS) of the external Flash memory when communicating with the TFT screen.
作为本发明的进一步改进,所述微控制单元(MCU)在接收数据时能够使能其SPI主输入从输出线(SPI_MISO),并将主输出从输入线(SPI_MOSI)设置为输入模式。As a further improvement of the present invention, the micro control unit (MCU) can enable its SPI master input slave output line (SPI_MISO) and set the master output slave input line (SPI_MOSI) to input mode when receiving data.
作为本发明的进一步改进,所述微控制单元(MCU)在发送数据时能够使能其SPI主输出从输入线(SPI_MOSI),并将主输入从输出线(SPI_MISO)设置为输入模式。As a further improvement of the present invention, the micro control unit (MCU) can enable its SPI master output slave input line (SPI_MOSI) and set the master input slave output line (SPI_MISO) to input mode when sending data.
作为本发明的进一步改进,所述微控制单元(MCU)在需要将外部Flash存储器的数据透传到TFT屏幕时,能够将其SPI主输出从输入线(SPI_MOSI)和主输入从输出线(SPI_MISO)设置为输入模式,并控制SPI时钟线(SPI_SCK)发送时钟信号。As a further improvement of the present invention, when the micro control unit (MCU) needs to transparently transmit data from the external Flash memory to the TFT screen, it can use its SPI master output slave input line (SPI_MOSI) and master input slave output line (SPI_MISO ) is set to input mode and controls the SPI clock line (SPI_SCK) to send the clock signal.
相比于现有技术,本发明的优点在于:Compared with the existing technology, the advantages of the present invention are:
本方案通过单一的串行外设接口(SPI)高效连接微控制单元(MCU)、外部Flash存储器和TFT显示屏,实现了一种简化的硬件架构,从而显著提高了TFT显示屏的帧率。由于SPI接口允许图像数据直接从Flash存储器传输到TFT屏幕,绕过了MCU的中间处理,这不仅加快了数据传输速度,还减轻了MCU的工作负担,降低了对其性能的依赖,此外减少了所需的MCU I/O管脚数量,降低了内存需求,进一步减少了系统的总成本和功耗。通过电阻串联的方式降低了信号干扰,提高了传输稳定性,可以降低芯片资源要求,提高刷屏效率和效果,适合于对高分辨率和流畅显示性能有高要求的应用,提供了成本效益和性能之间的优化平衡。This solution efficiently connects the microcontrol unit (MCU), external Flash memory and TFT display through a single serial peripheral interface (SPI), achieving a simplified hardware architecture, thereby significantly increasing the frame rate of the TFT display. Since the SPI interface allows image data to be transmitted directly from the Flash memory to the TFT screen, bypassing the intermediate processing of the MCU, this not only speeds up the data transmission, but also reduces the workload of the MCU and reduces the dependence on its performance. In addition, it reduces The number of MCU I/O pins required reduces memory requirements, further reducing the overall system cost and power consumption. The series connection of resistors reduces signal interference and improves transmission stability, which can reduce chip resource requirements and improve screen refresh efficiency and effect. It is suitable for applications with high requirements for high resolution and smooth display performance, providing cost-effectiveness and Optimized balance between performance.
附图说明Description of the drawings
图1为本发明的结构示意图;Figure 1 is a schematic structural diagram of the present invention;
图2为本发明的微控制器引脚功能分配示意图;Figure 2 is a schematic diagram of pin function allocation of the microcontroller of the present invention;
图3为本发明的接口连接细节示意图。Figure 3 is a detailed schematic diagram of the interface connection of the present invention.
具体实施方式Detailed ways
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述;显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例,基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention; it is obvious that the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments, and all other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making creative work are within the scope of protection of the present invention.
实施例1:Example 1:
请参阅图1至图3,一种用于提高TFT显示屏帧率的高效SPI数据传输连接方式,包括:Please refer to Figure 1 to Figure 3, an efficient SPI data transmission connection method for improving the frame rate of TFT display, including:
微控制单元(MCU);Microcontroller unit (MCU);
微控制单元(MCU)具有正电源输入引脚(VDD)和接地引脚(VSS),微控制单元(MCU)的正电源输入引脚(VDD)连接至正电源电压(VCC),微控制单元(MCU)的接地引脚(VSS)连接至接地(GND);The micro control unit (MCU) has a positive power input pin (VDD) and a ground pin (VSS). The positive power input pin (VDD) of the micro control unit (MCU) is connected to the positive power supply voltage (VCC). The micro control unit The ground pin (VSS) of (MCU) is connected to ground (GND);
外部Flash存储器;External Flash memory;
外部Flash存储器设置有多个引脚,外部Flash存储器的接地(GND)引脚连接至一个公共接地,外部Flash存储器的电源(VCC)引脚连接至正电源电压(VCC),外部Flash存储器的数据输出(DO)引脚通过一个上拉电阻(R2)连接至正电源电压(VCC),上拉电阻(R2)的电阻值为4.7千欧姆,外部Flash存储器的片选(CS#)引脚通过一个上拉电阻(R3)连接至正电源电压(VCC),上拉电阻(R3)的电阻值为4.7千欧姆,外部Flash存储器的数据输入(DI)引脚通过一个限流电阻(R5)连接至外部Flash存储器的数据输出(DO)引脚,限流电阻(R5)的电阻值为360欧姆;The external Flash memory is provided with multiple pins. The ground (GND) pin of the external Flash memory is connected to a common ground. The power supply (VCC) pin of the external Flash memory is connected to the positive power supply voltage (VCC). The data of the external Flash memory The output (DO) pin is connected to the positive supply voltage (VCC) through a pull-up resistor (R2) with a resistance of 4.7 kΩ and the chip select (CS#) pin of the external Flash memory. A pull-up resistor (R3) is connected to the positive supply voltage (VCC) with a resistance value of 4.7 kΩ. The data input (DI) pin of the external flash memory is connected through a current limiting resistor (R5). To the data output (DO) pin of the external Flash memory, the resistance value of the current limiting resistor (R5) is 360 ohms;
TFT屏幕;TFT screen;
TFT屏幕具有第1引脚至第13引脚,所述第9引脚和第10引脚均与正电源电压(VCC)连接,所述第8引脚、第11引脚和第13引脚均连接至接地(GND),正电源电压(VCC)与第12引脚之间通过一个电阻元件(R1)连接,电阻元件(R1)为51欧姆(51R),正电源电压(VCC)通过一个电容元件(C1)连接至接地(GND),电容元件(C1)为1微法拉(1uF)。The TFT screen has pins 1 to 13, the 9th pin and the 10th pin are connected to the positive power supply voltage (VCC), the 8th pin, the 11th pin and the 13th pin are connected to ground (GND), the positive supply voltage (VCC) and pin 12 are connected through a resistor element (R1), the resistor element (R1) is 51 ohms (51R), the positive supply voltage (VCC) is connected through a The capacitive element (C1) is connected to ground (GND) and the capacitive element (C1) is 1 microfarad (1uF).
其中,微控制单元(MCU)作为中心处理单元,负责数据的处理和命令的执行。外部Flash存储器用于存储图像数据,提供给MCU通过SPI读取。TFT屏幕用于显示MCU发送的图像数据,MCU通过单一SPI接口与Flash存储器和TFT屏幕连接,减少了硬件连接的复杂性。Among them, the micro control unit (MCU) serves as the central processing unit and is responsible for data processing and command execution. The external Flash memory is used to store image data and is provided to the MCU for reading through SPI. The TFT screen is used to display image data sent by the MCU. The MCU is connected to the Flash memory and the TFT screen through a single SPI interface, reducing the complexity of hardware connections.
这种设计显著提高了数据传输效率,降低了对MCU性能的要求,并且减少了硬件设计的复杂性。通过减少MCU中数据的中间搬运,直接从Flash传输到TFT,大大提高了图像更新的帧率,使得TFT显示屏能够更加流畅地显示高清图像和视频,尤其适用于高分辨率和高帧率的显示要求,此外,减少了MCU的管脚数量和内存需求,可以降低芯片资源要求,提高刷屏效率和效果,有助于降低整体系统成本和功耗。This design significantly improves data transmission efficiency, reduces the requirements for MCU performance, and reduces the complexity of hardware design. By reducing the intermediate transfer of data in the MCU and directly transferring it from Flash to TFT, the frame rate of image update is greatly improved, allowing the TFT display to display high-definition images and videos more smoothly, especially suitable for high-resolution and high-frame-rate displays. Display requirements, in addition, reduce the number of MCU pins and memory requirements, which can reduce chip resource requirements, improve screen refresh efficiency and effect, and help reduce overall system cost and power consumption.
微控制单元(MCU)通过单一串行外设接口(SPI)与外部Flash存储器和TFT屏幕连接。The microcontroller unit (MCU) interfaces with the external Flash memory and TFT screen through a single serial peripheral interface (SPI).
微控制单元(MCU)的SPI时钟线(SPI_SCK)连接到外部Flash存储器的时钟输入(SCK)和TFT屏幕的时钟输入(SCK)。The SPI clock line (SPI_SCK) of the micro control unit (MCU) is connected to the clock input (SCK) of the external Flash memory and the clock input (SCK) of the TFT screen.
其中,MCU的SPI时钟线(SPI_SCK)连接到Flash存储器和TFT屏幕的时钟输入,时钟线的共享确保数据在SPI总线上同步传输。Among them, the SPI clock line (SPI_SCK) of the MCU is connected to the clock input of the Flash memory and TFT screen. The sharing of the clock line ensures that data is transmitted synchronously on the SPI bus.
微控制单元(MCU)的主输出从输入线(SPI_MOSI)与主输入从输出线(SPI_MISO)相连,并且共同连接到外部Flash存储器的主输入从输出线(MISO)和TFT屏幕的主输出从输入线(MOSI)。The master output slave input line (SPI_MOSI) of the micro control unit (MCU) is connected to the master input slave output line (SPI_MISO), and is jointly connected to the master input slave output line (MISO) of the external Flash memory and the master output slave input of the TFT screen line(MOSI).
其中,MCU的SPI主输出从输入线(SPI_MOSI)和主输入从输出线(SPI_MISO)相连,这样设计可以简化数据传输路径,这些线同时连接到Flash和TFT屏幕的对应数据线。Among them, the SPI master output slave input line (SPI_MOSI) of the MCU is connected to the master input slave output line (SPI_MISO). This design can simplify the data transmission path. These lines are simultaneously connected to the corresponding data lines of the Flash and TFT screens.
其中,在Flash存储器的MISO和MOSI之间通过电阻串联,这可能是为了限制电流或减少干扰。Among them, a resistor is connected in series between MISO and MOSI of the Flash memory, which may be to limit the current or reduce interference.
外部Flash存储器和TFT屏幕的片选线(CS)分别连接到MCU的不同I/O端口。The chip select lines (CS) of the external Flash memory and TFT screen are connected to different I/O ports of the MCU respectively.
其中,MCU通过不同的I/O端口控制Flash存储器和TFT屏幕的片选线(CS),允许MCU独立地与Flash或TFT屏幕通信,而不会相互干扰。Among them, the MCU controls the chip select line (CS) of the Flash memory and TFT screen through different I/O ports, allowing the MCU to communicate with the Flash or TFT screen independently without interfering with each other.
微控制单元(MCU)在与外部Flash存储器通信时能够使能外部Flash存储器的片选线(CS),同时失能TFT屏幕的片选线(CS)。When communicating with the external Flash memory, the micro control unit (MCU) can enable the chip select line (CS) of the external Flash memory and simultaneously disable the chip select line (CS) of the TFT screen.
其中,MCU在与Flash通信时使能Flash的CS,同时失能TFT屏幕的CS,这确保了在与Flash交互时,TFT屏幕不会接收到不应接收的信号。Among them, the MCU enables the CS of the Flash when communicating with the Flash, and at the same time disables the CS of the TFT screen. This ensures that the TFT screen will not receive signals that should not be received when interacting with the Flash.
微控制单元(MCU)在与TFT屏幕通信时能够使能TFT屏幕的片选线(CS),同时失能外部Flash存储器的片选线(CS)。When communicating with the TFT screen, the micro control unit (MCU) can enable the chip select line (CS) of the TFT screen and simultaneously disable the chip select line (CS) of the external Flash memory.
其中,MCU在与TFT屏幕通信时使能TFT的CS,同时失能Flash的CS,确保了在与TFT屏幕交互时,Flash存储器不会接收到不应接收的信号。Among them, the MCU enables the CS of the TFT when communicating with the TFT screen, and disables the CS of the Flash at the same time, ensuring that the Flash memory does not receive signals that should not be received when interacting with the TFT screen.
微控制单元(MCU)在接收数据时能够使能其SPI主输入从输出线(SPI_MISO),并将主输出从输入线(SPI_MOSI)设置为输入模式。The micro control unit (MCU) can enable its SPI master input slave output line (SPI_MISO) and set the master output slave input line (SPI_MOSI) to input mode when receiving data.
其中,MCU在接收数据时,会使能SPI_MISO,并将SPI_MOSI设置为输入模式,使得MCU可以正确地从SPI总线上接收数据。Among them, when the MCU receives data, it will enable SPI_MISO and set SPI_MOSI to input mode so that the MCU can correctly receive data from the SPI bus.
微控制单元(MCU)在发送数据时能够使能其SPI主输出从输入线(SPI_MOSI),并将主输入从输出线(SPI_MISO)设置为输入模式。The micro control unit (MCU) can enable its SPI master output slave input line (SPI_MOSI) and set the master input slave output line (SPI_MISO) to input mode when sending data.
其中,MCU在发送数据时,会使能SPI_MOSI,并将SPI_MISO设置为输入模式,使得MCU可以正确地向SPI总线上发送数据。Among them, when the MCU sends data, it will enable SPI_MOSI and set SPI_MISO to the input mode so that the MCU can correctly send data to the SPI bus.
微控制单元(MCU)在需要将外部Flash存储器的数据透传到TFT屏幕时,能够将其SPI主输出从输入线(SPI_MOSI)和主输入从输出线(SPI_MISO)设置为输入模式,并控制SPI时钟线(SPI_SCK)发送时钟信号。When the micro control unit (MCU) needs to transparently transmit data from the external Flash memory to the TFT screen, it can set its SPI master output slave input line (SPI_MOSI) and master input slave output line (SPI_MISO) to input mode and control the SPI The clock line (SPI_SCK) sends the clock signal.
其中,MCU可以将SPI_MOSI和SPI_MISO设置为输入模式,并控制SPI_SCK发送时钟信号,从而直接将数据从Flash透传到TFT,可以在不涉及MCU中间处理的情况下,直接将数据从存储器传输到显示屏,提高了数据传输效率。Among them, the MCU can set SPI_MOSI and SPI_MISO to input mode and control SPI_SCK to send the clock signal, thereby directly transparently transmitting data from Flash to TFT, and can directly transmit data from memory to display without involving the MCU intermediate processing. screen, improving data transmission efficiency.
工作原理:working principle:
MCU利用单一的串行外围设备接口(SPI)来管理与外部Flash存储器和TFT屏幕的通信。通过共享SPI时钟线(SPI_SCK),MCU确保了数据在这两个外设之间能够同步传输。MCU的SPI主数据输出线(SPI_MOSI)和主数据输入线(SPI_MISO)直接连接至外部Flash和TFT屏幕,这样的配置支持数据线直连,允许Flash与TFT之间的直接数据传输,减少了MCU的中间处理工作。片选线(CS)的控制使MCU能够选择性的与外部Flash或TFT屏幕进行通信,从而避免了潜在的数据传输冲突。MCU通过切换输入/输出模式来适应数据的发送和接收需求。此外,在需要将数据直接从Flash传输到TFT屏幕时,MCU可以将SPI数据线设置为输入模式,并仅通过控制SPI时钟线来实现数据的透传,这种方式允许数据无需在MCU中缓存就能传输,提高了效率并减少了资源占用。The MCU utilizes a single serial peripheral interface (SPI) to manage communication with external Flash memory and TFT screens. By sharing the SPI clock line (SPI_SCK), the MCU ensures that data can be transferred synchronously between the two peripherals. The MCU's SPI main data output line (SPI_MOSI) and main data input line (SPI_MISO) are directly connected to the external Flash and TFT screens. This configuration supports direct connection of data lines, allowing direct data transmission between Flash and TFT, reducing the MCU intermediate processing work. The control of the chip select line (CS) enables the MCU to selectively communicate with an external Flash or TFT screen, thereby avoiding potential data transmission conflicts. The MCU adapts to data sending and receiving needs by switching input/output modes. In addition, when data needs to be transmitted directly from Flash to the TFT screen, the MCU can set the SPI data line to input mode and realize transparent transmission of data only by controlling the SPI clock line. This method allows the data to be cached without buffering in the MCU. can be transmitted, improving efficiency and reducing resource usage.
对于本领域技术人员而言,显然本发明不限于上述示范性实施例的细节,而且在不背离本发明的精神或基本特征的情况下,能够以其他的具体形式实现本发明。因此,无论从哪一点来看,均应将实施例看作是示范性的,而且是非限制性的,本发明的范围由所附权利要求而不是上述说明限定,因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。It is obvious to those skilled in the art that the present invention is not limited to the details of the above-described exemplary embodiments, and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention. Therefore, the embodiments should be regarded as illustrative and non-restrictive from any point of view, and the scope of the present invention is defined by the appended claims rather than the above description, and it is therefore intended that all claims falling within the claims All changes within the meaning and scope of equivalent elements are included in the present invention. Any reference signs in the claims shall not be construed as limiting the claim in question.
此外,应当理解,虽然本说明书按照实施例加以描述,但并非每个实施例仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施例中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。In addition, it should be understood that although this specification is described in terms of embodiments, not each embodiment only contains an independent technical solution. This description of the specification is only for the sake of clarity, and those skilled in the art should take the specification as a whole. , the technical solutions in each embodiment can also be appropriately combined to form other implementations that can be understood by those skilled in the art.
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