CN117758423A - Plain weave antistatic fabric with hidden antistatic fibers and processing technology thereof - Google Patents
Plain weave antistatic fabric with hidden antistatic fibers and processing technology thereof Download PDFInfo
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- CN117758423A CN117758423A CN202311856451.0A CN202311856451A CN117758423A CN 117758423 A CN117758423 A CN 117758423A CN 202311856451 A CN202311856451 A CN 202311856451A CN 117758423 A CN117758423 A CN 117758423A
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- 239000004744 fabric Substances 0.000 title claims abstract description 137
- 239000000835 fiber Substances 0.000 title claims abstract description 117
- 238000005516 engineering process Methods 0.000 title claims abstract description 15
- 238000001816 cooling Methods 0.000 claims description 19
- 229920001778 nylon Polymers 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000004043 dyeing Methods 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910021389 graphene Inorganic materials 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 238000007493 shaping process Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 6
- 238000009941 weaving Methods 0.000 claims description 6
- 229920000728 polyester Polymers 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 239000002759 woven fabric Substances 0.000 claims description 4
- 229920006052 Chinlon® Polymers 0.000 claims description 2
- 229920004933 Terylene® Polymers 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 2
- 238000009987 spinning Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 8
- 239000004677 Nylon Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- FPVGTPBMTFTMRT-UHFFFAOYSA-L disodium;2-amino-5-[(4-sulfonatophenyl)diazenyl]benzenesulfonate Chemical compound [Na+].[Na+].C1=C(S([O-])(=O)=O)C(N)=CC=C1N=NC1=CC=C(S([O-])(=O)=O)C=C1 FPVGTPBMTFTMRT-UHFFFAOYSA-L 0.000 description 1
- 235000019233 fast yellow AB Nutrition 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
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- Woven Fabrics (AREA)
Abstract
The invention relates to the technical field of fabric spinning, in particular to a plain weave antistatic fabric with hidden antistatic fibers and a processing technology thereof. The plain weave antistatic fabric with hidden antistatic fibers is plain weave, warp yarns and weft yarns are interwoven alternately one by one, the antistatic fibers are distributed in the weft direction and are arranged on the back of the corresponding weft yarns, 0-10 weft yarns are arranged between adjacent antistatic fibers, and the antistatic fibers pass through the warp yarns one by one in a 1-10 lower mode. According to the invention, the antistatic fiber tissue points are fully buried below the weft yarns on the surface of the fabric, so that the antistatic fiber is not seen from the front surface of the plain weave antistatic fabric, the flatness of the plain weave fabric can be maintained, and an excellent antistatic function is given to the fabric.
Description
Technical Field
The invention relates to the technical field of fabric spinning, in particular to a plain weave antistatic fabric with hidden antistatic fibers and a processing technology thereof.
Background
The antistatic fabric is processed by antistatic processing and is widely used in the fields of petroleum industry, mining and metallurgy industry, chemical industry, electronic industry and the like. At present, the processing method of the antistatic fabric mainly comprises the following three steps: (1) finishing the fabric with an antistatic finishing agent; (2) Fiber grafting modification, hydrophilic fiber blending and interweaving for the purpose of improving fabric hygroscopicity; (3) blending or weaving conductive fibers.
In the processing method, if the antistatic fabric obtained by the first two methods is in a dry environment or washed for a plurality of times, the antistatic effect is weakened, and the antistatic fabric is usually applied to common clothing fabrics; the third processing method can solve the static problem of textile permanently and efficiently, and is widely applied to the production of antistatic working clothes and the like.
However, at present, the antistatic fiber is generally black yarn, when the fabric is processed through blending or inlay weaving, the antistatic black yarn floats on the surface of the fabric, if the fabric is dark, the fabric is not obvious, but the fabric has obvious black yarn feel, no matter the antistatic black yarn is dot-shaped or strip-shaped, the black yarn can be always seen from the surface of the fabric, the appearance of the fabric is influenced, and the application range of the fabric is limited.
In order to hide the antistatic fiber of the antistatic fabric, patent CN203890592U discloses an antistatic fabric with a buried structure, the surface of the fabric is formed into a complete 3/1 right twill through a special structure, the back surface is formed into a 1/3 structure, two warp yarns are formed in the structure of an antistatic unit structure with one antistatic fiber spaced, and the antistatic fiber is equidistantly arranged on the warp yarns, so that the antistatic fiber can be well hidden on the back surface of the fabric.
Patent CN203890591U discloses an antistatic fabric with a warp and weft two-way buried weave structure, the surface of the fabric is formed into a complete 2/2 twill through a special weave structure, the weave points of the antistatic fiber on the back are buried between the weave points of the adjacent warp and weft respectively, the antistatic unit weave is uniformly distributed on the fabric in a regular shape, in the antistatic unit weave, the antistatic fiber is arranged on the warp and weft at a certain distance, and the linear density of the fourth warp and the second weft is only half or finer than that of the other warp and weft, so that the antistatic fabric can be well buried on the back of the fabric.
The above patent is that the anti-static fiber tissue points are completely buried in the warp yarns on the surface of the fabric through the structures of the warp yarns and the weft yarns in the tissue structure, so that the performances of anti-static and the like of the product are ensured, and the appearance and the serviceability of the product are also ensured. However, the fabric is of twill weave, the surface of the fabric is three-dimensional, the antistatic fiber is easy to hide, and the fabric is not suitable for plain weave fabric with flat surface.
Disclosure of Invention
The invention aims to provide the plain weave antistatic fabric with the hidden antistatic fibers, which is used for solving the technical problem that the antistatic fibers can be obviously seen from the front surface of the plain weave antistatic fabric, and the antistatic fiber tissue points are completely buried below weft yarns on the surface of the fabric, so that the antistatic fibers cannot be seen from the front surface of the plain weave antistatic fabric, the flatness of the plain weave fabric can be maintained, and an excellent antistatic function is given to the fabric.
The processing technology of the plain weave antistatic fabric with hidden antistatic fibers comprises the following steps:
(1) Weaving: the fabric weave is plain weave, warp yarns and weft yarns are interwoven alternately one by one, anti-static fibers are distributed in the weft direction and are arranged on the back of the corresponding weft yarns, 0-10 weft yarns are separated between adjacent anti-static fibers, and 1-10 anti-static fibers pass through the warp yarns one by one;
(2) Dyeing: immersing the woven fabric into a dyeing liquid, heating to 70-90 ℃ at 2-3 ℃/min, preserving heat for 7-8min, heating to 100-120 ℃ at 2-3 ℃/min, preserving heat for 7-8min, heating to 130-140 ℃ at 2-3 ℃/min, preserving heat for 45-50min, and finishing heating; then cooling to 100-120 ℃ at 2-3 ℃/min, preserving heat for 6-7min, cooling to 70-90 ℃ at 2-3 ℃/min, preserving heat for 25-35min, cooling to 30-50 ℃ at 2-3 ℃/min, and completing cooling;
(3) Shaping: and dehydrating the dyed fabric, and drying to obtain the plain weave antistatic fabric with hidden antistatic fibers.
In the step (1), according to the antistatic requirement of the fabric, the distribution density of the antistatic fiber in the weft direction of the fabric is reasonably set, and along with the gradual increase of the distribution density of the antistatic fiber in the weft direction of the fabric, the antistatic effect of the fabric is also gradually improved. When the antistatic requirement is higher, the weft yarns can be arranged between adjacent antistatic fibers without intervals, and the antistatic fiber is arranged on the back of each weft yarn, so that the fabric achieves the optimal antistatic effect. Meanwhile, the interweaving rule of the antistatic fiber and the warp yarn is adjusted, so that the antistatic fiber is hung on the back of the fabric with proper tightness.
Preferably, the warp yarn is one or two of polyester fiber and nylon fiber, and the warp yarn count is 5D-600D, preferably 10D-70D.
Preferably, the weft yarn is one or two of polyester fiber and nylon fiber, and the weft yarn count is 5D-600D, preferably 10D-70D.
Preferably, the antistatic fiber is one or two of terylene graphene antistatic fiber and chinlon graphene antistatic fiber, and the antistatic fiber yarn count is 5D-600D, preferably 10D-70D.
The yarn counts of the warp yarns and the weft yarns can be adjusted, so that the surface of the fabric has the effects of no pattern, check lines, transverse stripes and the like. For example, when the yarn counts of the warp and weft yarns are the same, the surface of the fabric exhibits a pattern-free effect (as shown in FIGS. 1-3); when the warp yarns and the weft yarns are circularly arranged in a mode of '1 roving+a plurality of spun yarns', the surface of the fabric presents a check effect (as shown in figures 4-6); when the yarn count of the warp yarn is the same and the weft yarn is circularly arranged in a mode of '1 roving+a plurality of spun yarns', the surface of the fabric presents a transverse stripe effect; etc. The adjustment of the count of the warp and weft yarns and the adjustment of the arrangement mode have no influence on the flatness and the antistatic effect of the fabric and the concealment of the antistatic fiber.
Preferably, when the weft adopts a yarn branch, the antistatic fiber is the same as the yarn branch of the weft; when two or more yarn branches are adopted as the weft yarn, the antistatic fiber is the same as the thinnest weft yarn branch.
Preferably, the plain weave antistatic fabric has a warp density of 80-300 pieces/inch and a weft density of 60-270 pieces/inch. Because a certain amount of antistatic fibers are required to be introduced into the weft direction of the fabric and are arranged on the back of the weft yarns, the flatness of the fabric is not affected, and the density of the weft yarns is less than or equal to that of warp yarns.
In the step (2), during dyeing, preparing a dyeing liquid according to the color requirement of the fabric, wherein the dye can be acid black, acid yellow, acid red and the like. The selection of the dyeing liquid has no influence on the antistatic effect of the fabric. The dyeing process adopts a method of stage heating and stage cooling, so that the warp and weft yarn fibers of the fabric are extruded and contracted more fully, the anti-static fibers are hidden, and the surface of the fabric is kept flat.
In the step (3), when drying, the material is pre-dried at 140-145 ℃, then baked at 160-165 ℃ and then cooled to below 30 ℃. Before drying and shaping, if other performance requirements are met on the fabric, the fabric can be treated in the functional auxiliary agent solution first, and then drying and shaping are carried out.
According to the invention, through drying and shaping the plain weave antistatic fabric, the warp and weft fibers of the fabric are extruded and contracted more fully, the antistatic fiber black silk is better hidden, and the advantages of the fabric structure are combined, so that the effects of fully hiding the black silk and having an excellent antistatic function are achieved.
The invention also provides the plain weave antistatic fabric with the hidden antistatic fibers, which is obtained by the processing technology, wherein the antistatic fibers are not shown on the front surface of the fabric, and the antistatic effect of the plain weave antistatic fabric is tested according to the standard GB/T12703.1-2021, so that the antistatic performance of the plain weave antistatic fabric is excellent.
Compared with the prior art, the invention has the following beneficial effects:
(1) The invention uses polyester fiber or nylon fiber, through the interweaving mode of warp and weft yarn and antistatic fiber, totally conceal the antistatic fiber on the back of the fabric, hang the antistatic fiber on the back of the antistatic fabric according to certain rule, combine the improvement of dyeing and finishing process at the same time, make the antistatic fiber squeeze in the warp and weft yarn tissue, thus conceal the antistatic fiber, make the front of the fabric see the antistatic fiber, can keep the flatness of the plain weave fabric at the same time, and give the fabric excellent antistatic function;
(2) According to the plain weave antistatic fabric, the yarn counts of warp yarns and weft yarns are adjusted, so that the surface of the fabric has the effects of no patterns, check marks, transverse stripes and the like, and the adjustment of the yarn counts of warp yarns and weft yarns and the adjustment of the arrangement mode have no influence on the flatness and antistatic effect of the fabric and the hiding of antistatic fibers.
Drawings
FIG. 1 is a weave diagram of a plain weave antistatic fabric with hidden antistatic fibers according to example 1 of the present invention;
fig. 2 is a front view of a plain weave antistatic fabric with hidden antistatic fibers according to embodiment 1 of the present invention;
FIG. 3 is a back view of a plain weave antistatic fabric with hidden antistatic fibers according to example 1 of the present invention;
FIG. 4 is a weave diagram of a plain weave antistatic fabric with hidden antistatic fibers according to example 2 of the present invention;
FIG. 5 is a front view of a plain weave antistatic fabric with hidden antistatic fibers according to example 2 of the present invention;
FIG. 6 is a back view of a plain weave antistatic fabric with hidden antistatic fibers according to example 2 of the present invention;
in the figure: 1. warp yarns; 2. weft yarns; 3. an antistatic fiber.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail. In order to avoid unnecessary detail, well-known structures or functions will not be described in detail in the following embodiments.
In the examples, the antistatic effect of the fabric was tested according to standard GB/T12703.1-2021.
Example 1
A plain weave antistatic fabric with hidden antistatic fibers has a weave diagram shown in figure 1, and the processing technology is as follows:
(1) Weaving: the fabric weave is plain weave, the warp yarns and the weft yarns are nylon fibers with 20D, the warp yarns and the weft yarns are interwoven one by one at intervals, the warp density is 210 pieces/inch, and the weft density is 142 pieces/inch; the anti-static fibers are nylon graphene anti-static fibers of the yarn support 20D, the anti-static fibers are distributed in the weft direction and are arranged on the back of the corresponding weft yarn, four weft yarns are arranged between adjacent anti-static fibers, and the anti-static fibers pass through warp yarns from top to bottom;
(2) Dyeing: immersing the woven fabric into a dyeing liquid, heating to 70 ℃ at 2 ℃/min for 8min, heating to 100 ℃ at 2 ℃/min for 8min, and heating to 130 ℃ at 2 ℃/min for 50min to finish heating; then cooling to 100 ℃ at 2 ℃/min for 7min, cooling to 70 ℃ at 2 ℃/min for 35min, and cooling to 30 ℃ at 2 ℃/min to finish cooling;
(3) Shaping: dehydrating the dyed fabric, pre-baking at 145 ℃, baking at 165 ℃, and cooling to below 30 ℃ to obtain the plain weave antistatic fabric with hidden antistatic fibers.
The front and back surfaces of the plain weave antistatic fabric in the embodiment are shown in fig. 2-3, and as can be seen from fig. 2-3, the front surface of the fabric does not show antistatic fibers, the flatness is good, and the antistatic fiber black yarns are hidden on the back surface of the fabric.
Comparative example 1
The present comparative example differs from the fabric weave of example 1 only in that the weft yarn corresponding to the antistatic fiber is removed, namely: the fabric is plain weave, the warp yarn 1 and the weft yarn 2 are all nylon fibers with yarn count of 20D, the antistatic fiber 3 is nylon graphene antistatic fibers with yarn count of 20D, the warp yarn 1 is adopted in the warp direction of the fabric, the weft directions of the fabric are circularly arranged in a mode of 1 antistatic fiber plus 4 weft yarns, the warp yarn 1 is interwoven with the weft yarn 1 at intervals, the warp density is 210/inch, and the weft density is 142/inch.
The front and back sides of the plain weave antistatic fabric of the comparative example show antistatic fiber black yarns.
Meanwhile, the anti-static effect of the plain weave anti-static fabric of the comparative example 1 and the plain weave anti-static fabric of the example 1 is tested, and the results show that the surface resistivity of the fabrics is lower than 2 multiplied by 10 6 Omega, which is in accordance with the A level,the charge area density was 2.0. Mu.C/m 2 The electrostatic half-life was 0.2s. It can be known that after the anti-static fiber is hidden, the anti-static effect of the fabric is not affected.
Example 2
The plain weave antistatic fabric with hidden antistatic fiber has a weave diagram shown in figure 4, and the processing technology is as follows:
(1) Weaving: the fabric weave is plain weave, warp yarns and weft yarns are circularly arranged in a mode of 1 40D nylon fiber plus 9 20D nylon fibers, the warp yarns and the weft yarns are interwoven one by one at intervals, the warp density is 195 per inch, and the weft density is 177 per inch; the antistatic fiber adopts nylon graphene antistatic fiber with 20D yarn count, the antistatic fiber is distributed in the weft direction and arranged on the back surface of 40D nylon fiber in the weft, nine weft yarns are separated between adjacent antistatic fibers, and the antistatic fiber passes through warp yarns one by one;
(2) Dyeing: immersing the woven fabric into a dyeing liquid, heating to 90 ℃ at 3 ℃/min, preserving heat for 7min, heating to 120 ℃ at 3 ℃/min, preserving heat for 7min, and preserving heat for 45min at 140 ℃ at 3 ℃/min to finish heating; then cooling to 120 ℃ at 3 ℃/min for 7min, cooling to 90 ℃ at 3 ℃/min for 25min, and cooling to 50 ℃ at 3 ℃/min to finish cooling;
(3) Shaping: dehydrating the dyed fabric, pre-baking at 140 ℃, baking at 160 ℃, and cooling to below 30 ℃ to obtain the plain weave antistatic fabric with hidden antistatic fibers.
The front and back surfaces of the plain weave antistatic fabric in the embodiment are shown in fig. 5-6, and as can be seen from fig. 2-3, the fabric presents check patterns, the front surface does not display antistatic fibers, the flatness is good, and the antistatic fiber black filaments are hidden at the back surface of the fabric.
Comparative example 2
The present comparative example differs from the fabric weave of example 2 only in that the weft yarn corresponding to the antistatic fiber is removed, namely: the fabric is plain weave, warp yarn 1 is circularly arranged in a mode of 1 40D nylon fiber plus 9 20D nylon fibers, the weft yarn of the fabric is circularly arranged in a mode of 1 20D nylon graphene antistatic fiber and 1 20D nylon fiber mixed yarn plus 9 20D nylon fibers, the fabric is interwoven with warp yarn 1 in a top-bottom alternate manner, the warp density is 195 pieces/inch, and the weft density is 177 pieces/inch.
The front and back sides of the plain weave antistatic fabric of the comparative example show antistatic fiber black yarns.
Meanwhile, the anti-static effect of the plain weave anti-static fabric of the comparative example 2 and the plain weave anti-static fabric of the example 2 is tested, and the results show that the surface resistivity of the fabrics is lower than 2.5x10 12 Omega, C-class, charge surface density of 1.9. Mu.C/m 2 The electrostatic half-life was 0.22s. It can be known that after the anti-static fiber is hidden, the anti-static effect of the fabric is not affected.
Claims (9)
1. A processing technology of a plain weave antistatic fabric with hidden antistatic fibers is characterized in that: the method comprises the following steps:
(1) Weaving: the fabric weave is plain weave, warp yarns and weft yarns are interwoven alternately one by one, anti-static fibers are distributed in the weft direction and are arranged on the back of the corresponding weft yarns, 0-10 weft yarns are separated between adjacent anti-static fibers, and 1-10 anti-static fibers pass through the warp yarns one by one;
(2) Dyeing: immersing the woven fabric into a dyeing liquid, heating to 70-90 ℃ at 2-3 ℃/min, preserving heat for 7-8min, heating to 100-120 ℃ at 2-3 ℃/min, preserving heat for 7-8min, heating to 130-140 ℃ at 2-3 ℃/min, preserving heat for 45-50min, and finishing heating; then cooling to 100-120 ℃ at 2-3 ℃/min, preserving heat for 6-7min, cooling to 70-90 ℃ at 2-3 ℃/min, preserving heat for 25-35min, cooling to 30-50 ℃ at 2-3 ℃/min, and completing cooling;
(3) Shaping: and dehydrating the dyed fabric, and drying to obtain the plain weave antistatic fabric with hidden antistatic fibers.
2. The processing technology of the plain weave antistatic fabric hiding the antistatic fiber according to claim 1, which is characterized in that: the warp yarn is one or two of polyester fiber and nylon fiber, and the warp yarn count is 5D-600D.
3. The processing technology of the plain weave antistatic fabric hiding the antistatic fiber according to claim 1, which is characterized in that: the weft yarn is one or two of polyester fiber and nylon fiber, and the weft yarn count is 5D-600D.
4. The processing technology of the plain weave antistatic fabric hiding the antistatic fiber according to claim 1, which is characterized in that: the antistatic fiber is one or two of terylene graphene antistatic fiber and chinlon graphene antistatic fiber, and the antistatic fiber yarn count is 5D-600D.
5. The processing technology of the plain weave antistatic fabric hiding the antistatic fiber according to claim 1, which is characterized in that: when the weft adopts a yarn branch, the antistatic fiber is the same as the yarn branch of the weft; when two or more yarn branches are adopted as the weft yarn, the antistatic fiber is the same as the thinnest weft yarn branch.
6. The processing technology of the plain weave antistatic fabric hiding the antistatic fiber according to claim 1, which is characterized in that: the warp density of the plain weave antistatic fabric is 80-300 pieces/inch, and the weft density is 60-270 pieces/inch.
7. The process for producing a plain weave antistatic fabric with hidden antistatic fibers according to claim 6, wherein the process comprises the steps of: the weft yarn density is less than or equal to the warp yarn density.
8. The processing technology of the plain weave antistatic fabric hiding the antistatic fiber according to claim 1, which is characterized in that: in the step (3), when drying, the material is pre-dried at 140-145 ℃, then baked at 160-165 ℃ and then cooled to below 30 ℃.
9. The utility model provides a hide anti-static fabric of plain weave of anti-static fiber which characterized in that: is prepared by the process according to any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311856451.0A CN117758423A (en) | 2023-12-29 | 2023-12-29 | Plain weave antistatic fabric with hidden antistatic fibers and processing technology thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311856451.0A CN117758423A (en) | 2023-12-29 | 2023-12-29 | Plain weave antistatic fabric with hidden antistatic fibers and processing technology thereof |
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| Publication Number | Publication Date |
|---|---|
| CN117758423A true CN117758423A (en) | 2024-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311856451.0A Pending CN117758423A (en) | 2023-12-29 | 2023-12-29 | Plain weave antistatic fabric with hidden antistatic fibers and processing technology thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117758423A (en) |
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2023
- 2023-12-29 CN CN202311856451.0A patent/CN117758423A/en active Pending
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