CN117757557A - Lubricating liquid for linear cutting of silicon wafer, linear cutting method of silicon wafer and application of lubricating liquid - Google Patents
Lubricating liquid for linear cutting of silicon wafer, linear cutting method of silicon wafer and application of lubricating liquid Download PDFInfo
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- CN117757557A CN117757557A CN202311678087.3A CN202311678087A CN117757557A CN 117757557 A CN117757557 A CN 117757557A CN 202311678087 A CN202311678087 A CN 202311678087A CN 117757557 A CN117757557 A CN 117757557A
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- wire cutting
- ethylene oxide
- propylene oxide
- silicon wafer
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- 238000005520 cutting process Methods 0.000 title claims abstract description 80
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 230000001050 lubricating effect Effects 0.000 title claims abstract description 58
- 239000007788 liquid Substances 0.000 title claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 44
- 239000010703 silicon Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000002270 dispersing agent Substances 0.000 claims abstract description 39
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims abstract description 37
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000080 wetting agent Substances 0.000 claims abstract description 25
- 239000004721 Polyphenylene oxide Substances 0.000 claims abstract description 23
- 150000001412 amines Chemical class 0.000 claims abstract description 23
- 229920000570 polyether Polymers 0.000 claims abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229920000642 polymer Polymers 0.000 claims abstract description 14
- 235000019387 fatty acid methyl ester Nutrition 0.000 claims abstract description 13
- 239000002518 antifoaming agent Substances 0.000 claims abstract description 12
- 239000003999 initiator Substances 0.000 claims abstract description 11
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 150000002191 fatty alcohols Chemical class 0.000 claims abstract description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 9
- 239000000314 lubricant Substances 0.000 claims description 9
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 7
- 239000012530 fluid Substances 0.000 claims description 7
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 6
- 238000009736 wetting Methods 0.000 claims description 6
- 150000003973 alkyl amines Chemical class 0.000 claims description 3
- 125000005375 organosiloxane group Chemical group 0.000 claims description 3
- 150000002009 diols Chemical class 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 37
- 230000000694 effects Effects 0.000 abstract description 17
- 238000005461 lubrication Methods 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 9
- 229910000831 Steel Inorganic materials 0.000 abstract description 5
- 239000010959 steel Substances 0.000 abstract description 5
- 239000011863 silicon-based powder Substances 0.000 description 15
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 14
- 238000004140 cleaning Methods 0.000 description 7
- 241000519995 Stachys sylvatica Species 0.000 description 6
- -1 polyoxyethylene Polymers 0.000 description 6
- BAVYZALUXZFZLV-UHFFFAOYSA-N mono-methylamine Natural products NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 5
- 229920000056 polyoxyethylene ether Polymers 0.000 description 5
- 229940051841 polyoxyethylene ether Drugs 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920001451 polypropylene glycol Polymers 0.000 description 4
- 229920000858 Cyclodextrin Polymers 0.000 description 3
- 239000002156 adsorbate Substances 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000005187 foaming Methods 0.000 description 3
- 229910001385 heavy metal Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 3
- ROSDSFDQCJNGOL-UHFFFAOYSA-N protonated dimethyl amine Natural products CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical compound O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- RVGRUAULSDPKGF-UHFFFAOYSA-N Poloxamer Chemical compound C1CO1.CC1CO1 RVGRUAULSDPKGF-UHFFFAOYSA-N 0.000 description 2
- 239000013530 defoamer Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 125000003916 ethylene diamine group Chemical group 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- KXLUWEYBZBGJRZ-POEOZHCLSA-N Canin Chemical compound O([C@H]12)[C@]1([C@](CC[C@H]1C(=C)C(=O)O[C@@H]11)(C)O)[C@@H]1[C@@]1(C)[C@@H]2O1 KXLUWEYBZBGJRZ-POEOZHCLSA-N 0.000 description 1
- GPFVKTQSZOQXLY-UHFFFAOYSA-N Chrysartemin A Natural products CC1(O)C2OC2C34OC3(C)CC5C(CC14)OC(=O)C5=C GPFVKTQSZOQXLY-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003335 steric effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Abstract
The invention relates to the technical field of silicon wafer cutting, and discloses a lubrication liquid for wire cutting of a silicon wafer, a silicon wafer wire cutting method and application of the lubrication liquid. The disclosed lubricating liquid for wire cutting of the silicon wafer comprises the following components in percentage by mass: 20-30% of lubricating dispersant, 15-25% of wetting agent, 0-5% of defoaming agent and the balance of pure water; the lubricating dispersant is an organic amine polyether dispersant, which is a polymer grafted with ethylene oxide and propylene oxide by taking organic amine as an initiator; the wetting agent is at least one of condensate of 8-12 carbon fatty acid methyl ester and ethylene oxide, propylene oxide and condensate of isomeric fatty alcohol and ethylene oxide, propylene oxide. The disclosed silicon wafer wire cutting method uses the lubricating liquid for wire cutting. The application of the lubricating liquid for wire cutting in N-type 210 large-size half-chip multi-wire cutting is also disclosed. The lubricating liquid provided by the invention can be matched with steel wires, has better dispersibility and wettability, and has good effect in the process of cutting silicon wafers.
Description
Technical Field
The invention relates to the technical field of silicon wafer cutting, in particular to lubricating liquid for linear cutting of silicon wafers, a silicon wafer linear cutting method and application thereof.
Background
The silicon wafer wire cutting is an important link of upstream production of a photovoltaic cell manufacturing process, the process is mainly used for processing solid silicon rods of monocrystalline silicon or polycrystalline silicon at present, firstly, the silicon rods are cut into square blocks, standard silicon wafers are required at the end of a cell manufacturing process in an on-line cutting mode, two factors playing a key role in the process are diamond wires and lubricating liquid, and if the diamond wires and the lubricating liquid cannot be effectively matched, various wire cutting risks can be caused in the on-line cutting process.
In the online cutting process, a large amount of silicon powder is carried out along with the friction between the steel wire and the silicon side, so that the content concentration of pure water silicon powder in the cylinder body is increased, and the performance requirements on the dispersibility and wettability of the silicon powder are increased. With the market demand of larger silicon wafer size and thinner silicon wafer thickness, the conventional dispersing agent and wetting agent on the market at present are more difficult to meet the use demands of silicon wafer manufacturing enterprises.
In view of this, the present invention has been made.
Disclosure of Invention
The invention aims to provide a lubrication liquid for linear cutting of a silicon wafer, a linear cutting method of the silicon wafer and application thereof.
The invention is realized in the following way:
in a first aspect, the invention provides a lubrication liquid for wire cutting of a silicon wafer, which comprises the following components in percentage by mass:
20-30% of lubricating dispersant, 15-25% of wetting agent, 0-5% of defoaming agent and the balance of pure water;
the lubricating dispersant is an organic amine polyether dispersant, which is a polymer grafted with ethylene oxide and propylene oxide by taking organic amine as an initiator;
the wetting agent is at least one of condensate of 8-12 carbon fatty acid methyl ester and ethylene oxide propylene oxide and condensate of isomeric fatty alcohol and ethylene oxide propylene oxide.
In an alternative embodiment, the wetting dispersant is of the formula (1) or (2):
in the formula (1), at least one of R1, R2, R3 and R4 is an ethylene oxide and propylene oxide chain segment, a is 1-14, and in the formula (2), at least one of R5, R6 and R7 is an ethylene oxide and propylene oxide chain segment; the structural formulas of the ethylene oxide and propylene oxide chain segments are as follows:or (b)Wherein R is H or-CH 3 M is 1 to 3, and n is 1 to 3.
In an alternative embodiment, when non-ethylene oxide, propylene oxide segments are present in R1, R2, R3 and R4 in formula (1), the group is an alkyl group;
when a non-ethylene oxide, propylene oxide segment is present in R5, R6 and R7 in formula (2), the group is an alkyl group;
the structural formula of the alkyl is-C f H 2f+1 Wherein f is 1 to 6.
In an alternative embodiment, the organic amine is at least one of alkylamine and ethylenediamine, and the organic amine polyether dispersant is a polymer prepared by taking organic amine as an initiator and grafting 1-2 ethylene oxide and propylene oxide long molecular chains on N atoms.
At the canIn an alternative embodiment, the wetting agent has the formula R-CO-R 8 -OCH 3 Wherein R is-C g H 2g+1 Wherein g is 1-12, R 8 Is thatOr->Wherein h is 1 to 3,i and 1 to 3.
In an alternative embodiment, the defoamer is present in an amount greater than 0%.
In an alternative embodiment, the defoamer is selected from at least one of acetylenic diol defoamers and polyether modified organosiloxanes.
In a second aspect, the present invention provides a method for wire cutting a silicon wafer, wherein the cutting process uses the lubricating fluid for wire cutting according to any one of the preceding embodiments.
In a third aspect, the present invention provides the use of a wire cutting lubricating fluid according to any of the preceding embodiments in N-type 210 large-size half-chip multi-wire cutting.
The invention has the following beneficial effects:
the lubricating liquid for wire cutting provided by the embodiment of the invention has a macromolecular space structure, and can be used as a lubricant and a silicon powder dispersing agent in the cutting process so as to adsorb heavy metal ions generated by cutting steel wires or in water quality, and also can greatly reduce the influence of the wire cutting process, silicon powder dispersing and adsorbates on the surface of a silicon wafer on the wool making white spots. The steric structure of N atoms in the molecular structure is combined with a plurality of grafted groups, so that the steric hindrance effect is enhanced, and the cleaning and dispersing effects of the lubricating liquid are excellent, so that the lubricating liquid has super-strong dispersing capability and lubricating capability for linear cutting of large-size silicon wafers, and has a chelating effect on harmful components. Compared with cyclodextrin polyether dispersant, the organic amine polyether dispersant has better effect in metal cleaning because the viscosity, hydrophilicity and other performances of the organic amine polyether dispersant can be adjusted by selecting different polyoxyalkylene structures, and amine groups provide more possible good reactivity. The fatty acid methyl ester polyoxyethylene polyoxypropylene ether wetting agent can bring super-strong wetting, penetrating, dispersing and low foaming properties, the surface tension can be as low as 25, and the super-low surface tension can enable the wetting agent to penetrate into all silicon powder particles with water, so that super-strong dispersing properties are achieved. Therefore, compared with the prior art, the composition of the lubricating liquid provided by the invention has good dispersion capability, avoids agglomeration and deposition of silicon powder in the process of online cutting large-size silicon wafers, causes surface damage of the silicon wafers, and prevents defects such as white spots and bright spots caused by residual cutting liquid in the subsequent texturing process.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below. The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
The lubrication liquid for wire cutting of the silicon wafer, the wire cutting method and the application thereof provided by the embodiment of the invention are specifically described below.
The lubricating liquid for wire cutting of the silicon wafer provided by the embodiment of the invention comprises the following components in percentage by mass:
20-30% of lubricating dispersant, 15-25% of wetting agent, 0-5% of defoaming agent and the balance of pure water;
the lubricating dispersant is an organic amine polyether dispersant, which is a polymer grafted with ethylene oxide and propylene oxide by taking organic amine as an initiator;
the wetting agent is at least one of condensate of 8-12 carbon fatty acid methyl ester and ethylene oxide and propylene oxide and condensate of isomeric fatty alcohol and ethylene oxide and propylene oxide.
The lubricating liquid for wire cutting provided by the embodiment of the invention has a macromolecular space structure, and can be used as a lubricant and a silicon powder dispersing agent in the cutting process so as to adsorb heavy metal ions generated by cutting steel wires or in water quality, and also can greatly reduce the influence of the wire cutting process, silicon powder dispersing and adsorbates on the surface of a silicon wafer on the wool making white spots. The steric structure of N atoms in the molecular structure is combined with a plurality of grafted groups, so that the steric hindrance effect is enhanced, the cleaning and dispersing effects are excellent, and the introduction of the epoxypropyl groups also enables the cleaning and dispersing effects to have low-foam performance, low foam and self elimination. Therefore, the lubricating liquid provided by the invention has super-strong dispersing capability and lubricating capability for linear cutting of large-size silicon wafers and has a chelating effect on harmful components. Compared with cyclodextrin polyether dispersant, the organic amine polyether dispersant has better effect in metal cleaning because the viscosity, hydrophilicity and other performances of the organic amine polyether dispersant can be adjusted by selecting different polyoxyalkylene structures, and amine groups provide more possible good reactivity.
The fatty acid methyl ester polyoxyethylene polyoxypropylene ether wetting agent can bring super-strong wetting, penetrating, dispersing and low foaming properties, the surface tension can be as low as 25, and the super-low surface tension can enable the wetting agent to penetrate into all silicon powder particles with water, so that super-strong dispersing properties are achieved. The introduction of the epoxypropane solves the problem of difficult defoaming of the fatty acid methyl ester polyoxyethylene ether, and has the advantage that the fatty acid methyl ester polyoxyethylene serial products can obtain good performance in the processing of solar silicon wafers by utilizing the good activity of the epoxypropane.
Compared with the prior art, the lubricating liquid provided by the invention has the advantages that the composition is simple, no metal corrosion inhibitor and the like are contained, the COD emission in the wire cutting waste liquid is greatly reduced, and the wire cutting waste liquid is easy to treat. The lubricating liquid has good dispersion capability, avoids agglomeration and deposition of silicon powder in the process of online cutting of large-size silicon wafers, causes surface damage of the silicon wafers, and prevents defects of white spots, bright spots and the like caused by residual cutting liquid in the subsequent texturing process; in addition, the addition amount of the lubricating liquid is small, and the dilution ratio is high, so that the COD of the waste liquid generated by wire cutting is also greatly reduced, the cost is saved in the subsequent treatment, and the method is environment-friendly.
Further, the organic amine is at least one of alkylamine and ethylenediamine, and the organic amine polyether dispersant is a polymer with 1-2 ethylene oxide and propylene oxide long molecular chains grafted on N atoms by taking the organic amine as an initiator.
Further, the structural formula of the wetting dispersant is as follows:
in the formula (1), at least one of R1, R2, R3 and R4 is an ethylene oxide and propylene oxide chain segment, a is 1-14, and in the formula (2), at least one of R5, R6 and R7 is an ethylene oxide and propylene oxide chain segment;
the structural formulas of the ethylene oxide and propylene oxide chain segments are as follows:r or->Wherein R is H or-CH 3 M is 1 to 3, and n is 1 to 3.
Further, when non-ethylene oxide and propylene oxide segments are present in R1, R2, R3 and R4 in formula (1), the group is an alkyl group;
when non-ethylene oxide and propylene oxide segments are present in R5, R6 and R7 in formula (2), the group is an alkyl group;
the structural formula of the alkyl is-C f H 2f+1 Wherein f is 1 to 6.
Further, in order to make the lubricating fluid have better defoaming performance, the content of the defoaming agent may be more than 0%.
Further, the defoaming agent can be at least one selected from the group consisting of commercially available alkyne diol defoamers and polyether modified organosiloxanes, and has the following structural formulas:
the embodiment of the invention also provides a silicon wafer wire cutting method, and the wire cutting lubricating liquid provided by the embodiment of the invention is used in the cutting process.
The embodiment of the invention also provides application of the lubricating liquid for wire cutting in N-type 210 large-size half-chip multi-wire cutting. The lubricating liquid for wire cutting provided by the invention has better multi-wire cutting effect on the N-type 210 large-size half-piece, so that the lubricating liquid is more suitable for multi-wire cutting of the N-type 210 large-size half-piece.
The features and capabilities of the present invention are described in further detail below in connection with the examples.
Example 1
The embodiment provides a lubrication liquid for wire cutting, which comprises the following specific components:
20% of lubricating dispersant, 15% of wetting agent and the balance of pure water.
The lubricating dispersant is ethylenediamine polyether, ethylenediamine is taken as an initiator, polymers of ethylene oxide and propylene oxide are grafted, each part of ethylenediamine is mixed with 1 part of polymers of ethylene oxide and propylene oxide, and the other three N upper points are connected with methyl groups to provide a branched structure and a steric hindrance effect, and the structural formula is as follows:
namely, in the structural general formula, a is 2, m is 1, n is 1, and f is 3.
In this embodiment, the wetting agent is 10-carbon fatty acid methyl ester polyoxyethylene ether polyoxypropylene ether, and the structural formula is:namely, in the general structural formula, g is 10, h is 1, and i is 1.
Example 2
The embodiment provides a lubrication liquid for wire cutting, which comprises the following specific components:
22% of lubricating dispersant, 15% of wetting agent and the balance of pure water.
The lubricating dispersant is dimethylamine polyether, takes dimethylamine as an initiator, grafts ethylene oxide and propylene oxide polymer, and has the structural formula:
namely, m is 1, n is 1, and f is 2 in the structural general formula.
In this embodiment, the wetting agent is a 12-carbon fatty acid methyl ester polyoxyethylene ether polyoxypropylene ether having the structural formula:in the structural general formula, g is 12, h is 1, and i is 1.
Example 3
The embodiment provides a lubrication liquid for wire cutting, which comprises the following specific components:
18% of lubricating dispersant, 20% of wetting agent and the balance of pure water.
The lubricating dispersant is methyl amine polyether, methyl amine is taken as an initiator, polymers of ethylene oxide and propylene oxide are grafted, each part of methyl amine is connected with 2 parts of polymers of ethylene oxide and propylene oxide, and in addition, a hole site on N is connected with methyl, so that a branched structure is provided, and the steric effect is provided, and the structural formula is as follows:
namely, m is 2, n is 2 and f is 1 in the structural general formula.
In this embodiment, the wetting agent is a 12-carbon fatty acid methyl ester polyoxyethylene ether polyoxypropylene ether having the structural formula:namely, in the structural general formula, g is 12, h is 1, and i is 1.
Example 4
The embodiment provides a lubrication liquid for wire cutting, which comprises the following specific components:
23% of lubricating dispersant, 17% of wetting agent and the balance of pure water.
The lubricating dispersant is ethylenediamine polyether, takes ethylenediamine as an initiator, grafts ethylene oxide and propylene oxide polymer, and is prepared by mixing 3 parts of ethylene oxide and propylene oxide polymer with each part of ethylenediamine, wherein the structural formula is as follows:
namely, in the structural general formula, a is 2, m is 3, n is 3, and f is 1.
In this embodiment, the wetting agent is a 12-carbon fatty acid methyl ester polyoxyethylene ether polyoxypropylene ether having the structural formula:namely, in the structural general formula, g is 12, h is 1, and i is 1.
(the content of the defoaming agent in the above case is 0%, and in order to enable the lubricating fluid to have better defoaming performance, the content of the defoaming agent can be more than 0%, so that the implementation case containing the defoaming agent is not additionally increased).
Experimental example
The results of the large-size silicon wafer wire-cut experiments performed on examples, comparative examples and some commercially available lubricating fluids are shown below:
as can be seen from the table, compared with the commercially available lubricating liquid, the lubricating liquid provided by the invention has obviously better pollution rate and breakage rate.
In summary, the lubricating liquid for wire cutting provided by the embodiment of the invention has a macromolecular space structure, and can be used as a lubricant and a silicon powder dispersing agent in the cutting process so as to adsorb heavy metal ions generated by cutting steel wires or in water quality, and also can greatly reduce the influence of the wire cutting process, silicon powder dispersing and adsorbates on the surface of a silicon wafer on the wool making white spots. The steric structure of N atoms in the molecular structure is combined with a plurality of grafted groups, so that the steric hindrance effect is enhanced, and the cleaning and dispersing effects of the lubricating liquid are excellent, so that the lubricating liquid has super-strong dispersing capability and lubricating capability for linear cutting of large-size silicon wafers, and has a chelating effect on harmful components. Compared with cyclodextrin polyether dispersant, the organic amine polyether dispersant has better effect in metal cleaning because the viscosity, hydrophilicity and other performances of the organic amine polyether dispersant can be adjusted by selecting different polyoxyalkylene structures, and amine groups provide more possible good reactivity. The fatty acid methyl ester polyoxyethylene polyoxypropylene ether wetting agent can bring super-strong wetting, penetrating, dispersing and low foaming properties, the surface tension can be as low as 25, and the super-low surface tension can enable the wetting agent to penetrate into all silicon powder particles with water, so that super-strong dispersing properties are achieved. Therefore, compared with the prior art, the composition of the lubricating liquid provided by the invention has good dispersion capability, avoids agglomeration and deposition of silicon powder in the process of online cutting large-size silicon wafers, causes surface damage of the silicon wafers, and prevents defects such as white spots and bright spots caused by residual cutting liquid in the subsequent texturing process.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. The lubricating liquid for wire cutting of the silicon wafer is characterized by comprising the following components in percentage by mass:
20-30% of lubricating dispersant, 15-25% of wetting agent, 0-5% of defoaming agent and the balance of pure water;
the lubricating dispersant is an organic amine polyether dispersant, and is a polymer grafted with ethylene oxide and propylene oxide by taking organic amine as an initiator;
the wetting agent is at least one of condensate of 8-12 carbon fatty acid methyl ester and ethylene oxide and propylene oxide and condensate of isomeric fatty alcohol and ethylene oxide and propylene oxide.
2. The lubricant for wire cutting according to claim 1, wherein the wetting dispersant has a structural formula shown in (1) or (2):
(1)(2)/>in the formula (1), at least one of R1, R2, R3 and R4 is an ethylene oxide and propylene oxide chain segment, a is 1-14, and in the formula (2), at least one of R5, R6 and R7 is an ethylene oxide and propylene oxide chain segment;
the structural formula of the ethylene oxide and propylene oxide chain segments is as follows:wherein R is H or-CH 3 M is 1 to 3, and n is 1 to 3.
3. The lubricant for wire cutting according to claim 1, wherein when a segment other than ethylene oxide or propylene oxide is present in R1, R2, R3 and R4 in the formula (1), the group is an alkyl group;
when non-ethylene oxide and propylene oxide segments are present in R5, R6 and R7 in formula (2), the group is an alkyl group;
the structural formula of the alkyl is-C f H 2f+1 Wherein f is 1 to 6.
4. The lubricant for wire cutting according to claim 1, wherein the organic amine is at least one of alkylamine and ethylenediamine, and the organic amine polyether dispersant is a polymer obtained by grafting 1-2 long molecular chains of ethylene oxide and propylene oxide on an N atom using the organic amine as an initiator.
5. The lubricant for wire cutting according to claim 1, wherein the wetting agent has a structural formula of R-CO-R 8 -OCH 3 Wherein R is-C g H 2g+1 Wherein g is 1-12, R 8 Is thatWherein h is 1 to 3,i and 1 to 3.
6. The lubricant for wire cutting according to claim 1, wherein the content of the antifoaming agent is more than 0%.
7. The lubricant for wire cutting according to claim 6, wherein the antifoaming agent is at least one selected from the group consisting of an acetylenic diol antifoaming agent and a polyether modified organosiloxane.
8. A silicon wafer wire cutting method, wherein the wire cutting process uses the lubricating fluid for wire cutting according to any one of claims 1 to 6.
9. Use of the lubricating fluid for wire cutting according to any one of claims 1 to 7 in N-type 210 large-size half-chip multi-wire cutting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311678087.3A CN117757557A (en) | 2023-12-08 | 2023-12-08 | Lubricating liquid for linear cutting of silicon wafer, linear cutting method of silicon wafer and application of lubricating liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311678087.3A CN117757557A (en) | 2023-12-08 | 2023-12-08 | Lubricating liquid for linear cutting of silicon wafer, linear cutting method of silicon wafer and application of lubricating liquid |
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| CN117757557A true CN117757557A (en) | 2024-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311678087.3A Pending CN117757557A (en) | 2023-12-08 | 2023-12-08 | Lubricating liquid for linear cutting of silicon wafer, linear cutting method of silicon wafer and application of lubricating liquid |
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| Country | Link |
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| CN (1) | CN117757557A (en) |
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2023
- 2023-12-08 CN CN202311678087.3A patent/CN117757557A/en active Pending
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