CN117747693A - Multispectral shortwave infrared detector based on GaSb photon crystal plate - Google Patents
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Abstract
The invention provides a multispectral short-wave infrared detector based on a GaSb photonic crystal plate, which comprises a second-class superlattice PBIN detection unit and a GaSb photonic crystal plate integrated on a GaSb cover layer of the second-class superlattice PBIN detection unit; the GaSb photonic crystal plate comprises a plurality of crystal plate units, wherein the periods of the crystal plate units are different, and the lattice constants of the crystal plate units are different; each crystal plate unit is provided with a plurality of detection holes, and the hole sizes of the detection holes of the plurality of crystal plate units are different. The invention has the advantages of wavelength selectivity, spectrum diversity, high resolution and wide working wave band.
Description
Technical Field
The invention relates to the technical field of multispectral infrared detection, in particular to a multispectral short-wave infrared detector based on a GaSb photon crystal plate.
Background
The multispectral photonic crystal infrared detection technology represents an important technological innovation, and aims to improve the performance and application field of infrared spectrum analysis. The core concept of the technology is the design of a photonic crystal structure, and the high-selectivity capturing of infrared radiation signals with different wavelengths is realized by precisely regulating and controlling the periodical lattice constant and pore size. The market background for this innovation includes a number of areas of military, environmental monitoring, medical diagnostics, and industrial applications, where there is an increasing need for multispectral infrared detection. Infrared spectroscopy has a wide range of applications in various fields in the world today. The military field needs high-resolution infrared detection technology for target identification, unmanned aerial vehicle navigation and the like so as to improve the success rate of military operation. In the aspect of environmental monitoring, multispectral infrared detection can be used for monitoring atmospheric pollution, climate change and greenhouse gas emission, and is beneficial to maintaining ecological balance. In the medical field, multispectral infrared detection can be used for medical image analysis and disease diagnosis, and the accuracy of the medical field is improved. In industrial application, the high-resolution multispectral infrared detection technology can improve the efficiency of industrial automation, quality control and anomaly detection.
Conventional multispectral imaging systems are typically composed of discrete optical elements and mechanical components, and are complex in structure, bulky, and costly, impeding their popularity in a wider range of fields. Among them, the spectroscopic element is a major factor limiting the miniaturization development of the spectral imaging system. The light splitting element bears the main function of the system for collecting the spectral characteristic information of the target area, and determines the optical performance of the imaging system, such as the detection mode, the spectral range, the resolution and the like. The size of the light splitting element is reduced, the chip level of on-chip integration is realized, and various optical performance index parameters are required to be weighed to meet specific application requirements. As a core component of the spectral imaging system, the spectral element determines technical indexes such as the overall architecture, volume, quality and the like of the system. Conventional spectral imaging systems are typically composed of discrete optical elements and mechanical components, and are complex in structure, bulky, and expensive, impeding their popularity in a wider range of fields.
In 2019, madison division Yu et al, university of Wis, USA, proposed a random spectrometer based on photonic crystal plates. The photonic crystal plates with different periods, lattice constants and pore sizes are integrated on the surface of the CMOS imaging sensor, so that the detection of the spectrum and the construction of an imaging spectrum system are realized. The working spectrum range of the filter structure is 550-750 nm, and the spectrum resolution is 1nm. The whole filter has the size of 210 mu m multiplied by 210 mu m, has smaller volume and realizes the design of chip integration on a chip. The constructed simple spectrum imaging system successfully acquires the spectrum information of the target, and the spectrum imaging capability of the photonic crystal plate filter is verified. However, the silicon-based photonic crystal plate detector is not easy to realize in-situ growth on a material system, and the working band is only 550-750 nm, so that the infrared band detection cannot be performed.
Disclosure of Invention
In order to solve the technical problems that a multispectral short-wave infrared detector in the prior art is not easy to grow in situ and cannot detect infrared wave bands, the invention aims to provide a multispectral short-wave infrared detector based on a GaSb photonic crystal plate, wherein the multispectral short-wave infrared detector comprises a second-class superlattice PBIN detection unit and a GaSb photonic crystal plate integrated on a GaSb cover layer of the second-class superlattice PBIN detection unit;
the GaSb photonic crystal plate comprises a plurality of crystal plate units, and the periods of the crystal plate units are different and the lattice constants are different; and each crystal plate unit is provided with a plurality of detection holes, and the hole sizes of the detection holes of the plurality of crystal plate units are different.
Preferably, the second-class superlattice PBIN detection unit comprises a substrate and a buffer layer grown on the substrate;
and a P region, a B region, an I region and an N region are sequentially grown on the buffer layer.
Preferably, the P region comprises a first 6InAs/1GaSb/5AlSb/1GaSb structure of 126 cycles; performing Be doping on the first 6InAs/1GaSb/5AlSb/1GaSb structure;
the region B comprises 47 cycles of a 5AlAsSb/2GaSb structure, and the 5AlAsSb/2GaSb structure is subjected to Be doping;
the I region comprises a 45-cycle/GaAs/4 InAs/1GaSb/5AlSb/1GaSb structure and a 278-cycle second 6InAs/1GaSb/5AlSb/1GaSb structure;
the N region comprises a third 6InAs/1GaSb/5AlSb/1GaSb structure with 50 periods; and the third 6InAs/1GaSb/5AlSb/1GaSb structure is doped with Si.
Preferably, the/GaAs/4 InAs/1GaSb/5AlSb/1GaSb structure is an undoped structure; the second 6InAs/1GaSb/5AlSb/1GaSb structure is an undoped structure.
Preferably, the third 6InAs/1GaSb/5AlSb/1GaSb structure is provided with a GaSb covering layer.
The invention provides a multispectral shortwave infrared detector based on a GaSb photon crystal plate, which comprises the following components: wavelength selectivity: the GaSb photonic crystal plate is used as a wavelength selective element, so that the high-selectivity filtration of different wavelengths is realized, and the detector can efficiently detect light in a specific wavelength range; spectral diversity: through integrating GaSb photonic crystal plates with different periods, lattice constants and pore sizes, multispectral detection is realized, so that the detector can detect the spectrum information of a plurality of different wavelength ranges simultaneously or alternately; high resolution: with the assistance of the GaSb photonic crystal slab, the spectral resolution is obviously improved, so that the GaSb photonic crystal slab is suitable for applications requiring high-precision spectral analysis, such as spectral imaging; the working wave band is wide: the invention can realize the working wave band in the range of 1-3 microns from short wave infrared detection to near infrared detection, and is suitable for various spectrum applications.
According to the multispectral short-wave infrared detector based on the GaSb photonic crystal plate, provided by the invention, the GaSb photonic crystal plate is directly processed at the front end of the second-class superlattice PBIN detection unit through a micro-nano processing technology, so that the volume and the weight of an imaging system are further reduced, and the detection of a spectrum and the construction of the imaging spectrum system are realized.
According to the multispectral short-wave infrared detector based on the GaSb photonic crystal plate, the GaSb layer is directly grown at the front end of the second-class superlattice PBIN detection unit, and then electron beam exposure is performed to write the GaSb photonic crystal plate. The innovative method effectively simplifies the system structure, reduces the volume and the cost, and promotes the popularization and the application of the spectrum imaging system in multiple fields.
According to the multispectral short-wave infrared detector based on the GaSb photonic crystal plate, the multispectral short-wave infrared detector works in a wave band of 1-3 microns by adjusting the periods, the lattice constants and the pore sizes of the detection holes of a plurality of crystal plate units of the GaSb photonic crystal plate, and the problem that the working wave band is not in an infrared wave band is solved. This flexibility enables the multispectral short-wave infrared detector to be adapted for a wider range of applications including medical, environmental monitoring and industrial quality control. By adjusting the working wave band, the photonic crystal plate can meet the requirements of different applications, and the universality and applicability of the system are improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 schematically shows a cross-sectional view of a GaSb photonic crystal slab-based multispectral short-wave infrared detector according to the present invention.
Fig. 2 shows a three-dimensional structure diagram of a multispectral shortwave infrared detector based on a GaSb photonic crystal slab.
Fig. 3 shows a graph of the test result of photoluminescence spectrum of a GaSb photonic crystal slab-based multispectral short-wave infrared detector of the present invention.
Fig. 4 shows an ohmic contact test result diagram of a multispectral shortwave infrared detector based on a GaSb photonic crystal slab.
Fig. 5 shows a graph of the current response of a GaSb photonic crystal slab-based multispectral short-wave infrared detector according to the present invention.
Detailed Description
To further clarify the above and other features and advantages of the present invention, a further description of the invention will be rendered by reference to the appended drawings. It should be understood that the specific embodiments presented herein are for purposes of explanation to those skilled in the art and are intended to be illustrative only and not limiting.
As shown in fig. 1 and 2, according to an embodiment of the present invention, there is provided a GaSb photonic crystal slab-based multispectral short-wave infrared detector, which includes a second-type superlattice PBIN detection unit, and a GaSb photonic crystal slab 9 integrated on a GaSb cap layer 8 of the second-type superlattice PBIN detection unit.
The type-II superlattice PBIN detection cell comprises a substrate 1, and a buffer layer 2 grown on the substrate 1. The substrate 1 of the second-class superlattice PBIN detection unit is a GaSb substrate, and the buffer layer 2 is a GaSb buffer layer.
And a P region, a B region, an I region and an N region are sequentially grown on the buffer layer 2. The P region comprises a first 6InAs/1GaSb/5AlSb/1GaSb structure 3 with 126 periods; the first 6InAs/1GaSb/5AlSb/1GaSb structure 3 is Be doped as a lower contact layer. The B region includes 47 cycles of 5AlAsSb/2GaSb structure 4, and the 5AlAsSb/2GaSb structure is doped by Be as a barrier region.
Region I includes 45 cycles/GaAs/4 InAs/1GaSb/5AlSb/1GaSb structure 5, and 278 cycles of a second 6InAs/1GaSb/5AlSb/1GaSb structure 6. The N region comprises a third 6InAs/1GaSb/5AlSb/1GaSb structure 7 with 50 periods; and the third 6InAs/1GaSb/5AlSb/1GaSb structure 7 is doped with Si.
The GaAs/4InAs/1GaSb/5AlSb/1GaSb structure 5 is an undoped structure, and the second 6InAs/1GaSb/5AlSb/1GaSb structure 6 is an undoped structure. The second 6InAs/1GaSb/5AlSb/1GaSb structure 6 is used as an absorption region, and the third 6InAs/1GaSb/5AlSb/1GaSb structure 7 is used as an upper contact layer.
A GaSb cap layer 8 is grown on the third 6InAs/1GaSb/5AlSb/1GaSb structure 7. A GaSb photonic crystal slab 9 is integrated on the GaSb cap layer 8.
According to an embodiment of the present invention, the GaSb photonic crystal slab 9 includes a plurality of crystal slab units. The 6 crystal plate units of the GaSb photonic crystal plate 9, namely, the first crystal plate unit 901, the second crystal plate unit 902, the first crystal plate unit 903, the fourth crystal plate unit 904, the fifth crystal plate unit 905, and the sixth crystal plate unit 906 are exemplarily shown in the present embodiment.
According to an embodiment of the present invention, the periods of the plurality of crystal plate units are different, and the lattice constants are different; each crystal plate unit is provided with a plurality of detection holes, and the hole sizes of the detection holes of the plurality of crystal plate units are different.
Taking the first crystal plate unit 901 and the second crystal plate unit 902 as examples, the growth periods of the first crystal plate unit 901 and the second crystal plate unit 902 are different, and the lattice constants are different.
The first crystal plate unit 901 is provided with a plurality of first detection holes 9011, the second crystal plate unit 902 is provided with a plurality of second detection holes 9021, the third crystal plate unit 903 is provided with a plurality of third detection holes 9031, and the fourth crystal plate unit 904 is provided with a plurality of third detection holes 9041, … ….
Taking the first and second crystal plate units 901 and 902 as an example, the hole size of the first detection hole 9011 of the first crystal plate unit 901 is different from the hole size of the second detection hole 9021 of the second crystal plate unit 902.
The periods of the plurality of crystal plate units are different, the lattice constants are different, and the hole sizes of the detection holes of the plurality of crystal plate units are different, so that the detection of spectra of different wave bands is realized.
The principle of the multispectral short-wave infrared detector based on the GaSb photonic crystal plate is described below.
(1) Principle of a second-class superlattice PBIN detection unit.
The second-class superlattice PBIN detection unit adopts a specially designed semiconductor superlattice structure and consists of a plurality of thin layers of different materials alternately. Typically, such structures include materials such as InAs (indium arsenide) and GaSb (gallium antimonide). The superlattice structure of the second type of superlattice PBIN detection cell forms a plurality of band gap (bandgap) layers, each having a different energy level bandgap. The design can accurately regulate and control the transition of electrons between different energy level bands. When infrared radiation enters the detector surface, photon energy of a particular wavelength matches the forbidden band energy level of the material. Photons are absorbed and excite the electrons to transition from the valence band to the conduction band. The excited electrons move freely in the conduction band, generating a current. This current signal is an electrical signal of the detected infrared radiation.
The second-class superlattice PBIN detection unit selects a 6InAs/1GaSb/5AlSb/1GaSb structure as an absorption region to control the working wavelength of the detector to Be in a short-wave infrared band, and in addition, a P region and an N region are doped by using Be and Si. Compared with the PIN structure, the PBIN structure has smaller dark current, and adopts the 5AlAsSb/2GaSb structure to carry out Be doping as a potential barrier region (preferably AlAs 0.1 Sb 0.9 GaSb) because of AlAs in AlAsSb/GaSb superlattice 0.1 Sb 0.9 Is lattice matched to the GaSb substrate and has Sb atoms identical to GaSb, which provides great flexibility in superlattice design without requiring any special interface design or strain balancing. And the valence band offset between AlAsSb and GaSb is small, the valence band engineering possibility is small, but the electron quantum well is deep (1.19 eV). So that the superlattice may be tuned to a wide-bandgap barrier layer. Smoother surface morphology can be achieved with AlAsSb/GaSb than with AlAsSb alone, and the AlAsSb/GaSb growth conditions are the same as InAs/GaSb/AlSb.
(2) The principle of operation of a GaSb photonic crystal plate 9 (a multispectral short wave infrared detector based on a GaSb photonic crystal plate of the invention) integrated on a GaSb cap layer 8 of a second-class superlattice PBIN detection unit.
The GaSb photonic crystal slab 9 is a core component of the present invention, the working principle of which is based on multiple reflections of light and spectrum sampling. The plurality of photonic crystal plate units of the GaSb photonic crystal plate 9 allow light rays of different wavelengths to be efficiently collected and analyzed, and high-resolution spectral measurement to be achieved within a minute size.
The GaSb photonic crystal slab 9 is a micrometer thin dielectric layer with periodic nanostructures on the surface. These periodic nanostructures cause multiple reflections of light when light is incident from free space. Unlike conventional spectrometers, light passes through the instrument not only once or twice, but is reflected back and forth multiple times within the GaSb photonic crystal slab 9, so that a long optical path can be realized within a minute size. Spectrum sampling and transmission spectrum: the periodic structure of GaSb photonic crystal slab 9 results in the spectrum of light being dispersed and sampled. This sampling approach creates a transmission spectrum that includes many rich spectral features such as spikes due to guided resonance, wide background variations due to fabry-perot resonance, and irregular linearities due to fabry-perot interference.
To achieve spectral measurement GaSb photonic crystal slab 9 employs an array of photonic crystal slab elements, which are fabricated with a plurality of different photonic crystal slab elements having different periodicity, lattice constants, and pore sizes. The purpose of deriving the signal from the wavelength is to obtain the rate of change or gradient at different wavelengths in the spectrum. This can be used to analyze features in the spectrum such as the location of the peak, the width of the peak, the intensity of the absorption or emission peak, etc. The signal received by the photodetector below the ith photonic crystal slab unit may be equal to the spectrum of the incident light multiplied by the spectrum of the transmitted light, multiplied by the integral of the responsivity of the detector with respect to wavelength, which may be explained by the principle of operation of the photonic crystal slab unit. The photonic crystal slab unit is a material with a periodic micro-nano structure, and can form an optical band gap in a specific wavelength range, namely, only light with specific wavelength is allowed to pass through, and light with other wavelengths can be reflected or absorbed. This means that when the incident light passes through the photonic crystal slab unit, only light of a specific wavelength can be transmitted and reach the underlying second-type superlattice PBIN detection unit. Thus, the signal received by the second type superlattice PBIN detection unit below the ith photonic crystal slab unit depends primarily on the spectrum of the incident light, since only certain wavelengths in the incident light are able to pass. The spectrum of this transmitted light is then multiplied by the integral of the responsivity of the two-superlattice PBIN detection unit with respect to wavelength, resulting in a final detector signal.
S i ＝∫I(λ)T i (λ)η(λ)dλ
Ti (λ) is the transmission spectrum, where λ is the wavelength in free space, I (λ) is the spectrum of the incident light, and η (λ) is the spectral response of a type two superlattice PBIN detection unit. The meaning of this equation is that it gives a brief overview of the relationship between incident light, transmitted light and detector responsivity. This equation describes the source of the sensor signal and how the spectral information is converted into a quantized signal that is output by the detector.
According to the multispectral short-wave infrared detector based on the GaSb photonic crystal plates, the GaSb photonic crystal plates 9 with different periods, lattice constants and pore sizes are integrated at the front ends of the two types of superlattice PBIN detection units, so that highly selective wavelength filtering and spectrum detection and construction of an imaging spectrum system are realized, the multispectral short-wave infrared detector can realize a working wave band of 1-3 microns, and the problems of low spectral resolution and integration of the photonic crystal plates and the infrared detector in multispectral detection are solved.
The preparation process of the multispectral short-wave infrared detector based on the GaSb photonic crystal plate is described below.
S1, selecting GaSb as an epitaxial substrate, adopting InAs/GaSb/AlSb materials as an absorption region and adopting AlAsSb/GaSb materials as a potential barrier region, and preparing a second-class superlattice PBIN detection unit by using a molecular beam epitaxy method.
And S2, integrating a GaSb photonic crystal plate 9 on the GaSb cover layer 8 of the second-class superlattice PBIN detection unit by utilizing a molecular beam epitaxy method.
Specifically, the method for integrating the GaSb photonic crystal slab 9 on the GaSb cap layer 8 of the second-type superlattice PBIN detection unit includes:
and (3) photoresist coating: a photoresist is coated on the GaSb cap layer 8. Positive electron beam photoresist, such as AZ5214, is uniformly coated on the surface of the GaSb cap layer 8 by a spin coating process at 4000rmp for 60s. The thickness control of the photoresist is achieved by adjusting spin coating parameters such as rotational speed and time to meet design requirements, typically about 1.4 microns.
And (3) heat baking pretreatment: the photoresist coated sample was thermally baked at a pre-bake temperature of about 100 c for about 90 seconds to cure the photoresist and enhance its stability.
Electron beam exposure: the sample is placed in an electron beam lithography machine and the photoresist is precisely exposed to electron beam radiation. By fine control of the position and intensity of the electron beam, the desired micro-nanostructure pattern is generated.
And (3) heat baking post-treatment: if the selected photoresist is negative photoresist, after exposure, carrying out thermal baking again to consolidate the shape and stability of the pattern and ensure the reliability of the micro-nano structure.
Developing: the sample is immersed in the appropriate developer solution. The exposed photoresist is gradually removed by the developing solution, so that the pattern of the ultra-surface micro-nano structure is clearly visible.
GaSb photonic crystal slab 9 growth: a GaSb photonic crystal slab 9 is grown on the sample surface (GaSb cap layer 8 surface). This step gives the micro-nano structure specific optical and electromagnetic properties, adding functionality to the infrared detector application.
Photoresist removal: the sample is immersed to remove the photoresist using a suitable solvent, such as acetone. This step transfers the photoresist pattern from the surface of the GaSb cap layer 8 to the GaSb photonic crystal slab 9.
After integrating a GaSb photonic crystal plate 9 on a GaSb cap layer 8 of a second-class superlattice PBIN detection unit, a light lamp electrode is prepared on the GaSb photonic crystal plate 9. Photoelectrodes are prepared on GaSb photonic crystal slab 9 using photolithography and etching processes. Photoelectrodes generally have electrodes and windows that allow infrared radiation to enter. In order to connect the multispectral shortwave infrared detector based on the GaSb photonic crystal board to an external circuit, a metal lead is attached to a photoelectric electrode. The entire device is then enclosed in a protective enclosure to prevent the ingress of dust and moisture.
The invention prepares the micro-nano structure template of the GaSb photonic crystal slab 9 by using a photoetching machine, and transfers the accurate design pattern to a photoresist layer. The process is optimized during the development step to ensure accuracy and stability of the template. The structural pattern on the template prepared by lithography is transferred to the surface of the GaSb photonic crystal slab 9 by using an electron beam exposure technique. The adjustment of exposure dose and time is critical to precisely control the size and shape of the structure, ensuring superior optical performance of the prepared supersurface. After the preparation is completed, the morphology of the micro-nano structure surface is observed by using a Scanning Electron Microscope (SEM), and the micro-nano structure surface is verified to be consistent with the design.
The method comprises the steps of firstly preparing a second-class superlattice PBIN detection unit by using a molecular beam epitaxy and micro-nano processing technology, secondly precisely constructing a GaSb photonic crystal plate 9 by using an electron beam exposure technology (EBL), and finally guiding light with different wavelengths to corresponding detection areas to realize rapid capture of multispectral signals. The advantage of this innovative approach is that it provides high resolution, high sensitivity multispectral infrared detection capability. Compared with the traditional infrared detector, the multispectral shortwave infrared detector based on the GaSb photonic crystal plate can realize in-situ growth more easily. In addition, the compact design and efficient energy utilization are expected to reduce the energy cost and the equipment size, and bring new possibilities for future development of infrared detection technology.
The prepared multispectral short-wave infrared detector based on the GaSb photonic crystal plate is tested below.
The optical performance of the multispectral short wave infrared detector based on the GaSb photon crystal plate, which is prepared by the in-situ spectrum test technology, under the infrared band, comprises absorption, transmission and the like. These tests will provide important data regarding the performance of the subsurface in infrared detection. Finally, an optical performance test is carried out on the prepared multispectral short wave infrared detector based on the GaSb photon crystal plate by utilizing an infrared light source and a spectrometer so as to verify the effect of the multispectral short wave infrared detector in an infrared band.
The energy band structure, carrier dynamics and defect state information of the material are researched by exciting the prepared multispectral short wave infrared detector based on the GaSb photon crystal plate and measuring the radiation luminescence of the multispectral short wave infrared detector, and photoluminescence spectrum (PL spectrum) testing is carried out. As shown in FIG. 3, the photoluminescence spectrum tested was compatible with infrared short wave detection, with a strong emission peak near infrared extended short wave (2.6 μm), with a band gap energy of about 476.92 electron volts (eV).
The electrical performance of the prepared multispectral shortwave infrared detector based on the GaSb photonic crystal plate is evaluated by measuring the current-voltage (IV) characteristics, and the IV characteristics test (the Mum contact test) is carried out. Ohmic contact testing is a test method used to verify the resistive properties of the electrical contacts or connections of the detector device. As shown in fig. 4, the electrical contact part of the tested detector can conduct electricity normally, and the performance and accuracy of the detector are guaranteed.
The infrared radiation is generated by using a light source, and the current response of the prepared multispectral short-wave infrared detector based on the GaSb photon crystal plate is measured to determine the sensitivity and the wavelength range. As shown in FIG. 5, the prepared multispectral shortwave infrared detector based on the GaSb photonic crystal plate has device current response test results under illumination and no illumination.
The multispectral short-wave infrared detector based on the GaSb photonic crystal plate has the following outstanding characteristics and advantages:
wavelength selectivity: the GaSb photonic crystal slab 9 is used as a wavelength selective element, so that the high-selectivity filtering of different wavelengths is realized, and the detector can efficiently detect light in a specific wavelength range.
Spectral diversity: by integrating GaSb photonic crystal plates 9 of different periods, lattice constants and pore sizes, multispectral detection is achieved, enabling the detector to detect spectral information of multiple different wavelength ranges simultaneously or alternately.
High resolution: with the aid of the GaSb photonic crystal slab 9, the spectral resolution is significantly improved, making it suitable for applications requiring high-precision spectral analysis, such as spectral imaging.
The working wave band is wide: the invention can realize the working wave band in the range of 1-3 microns from short wave infrared detection to near infrared detection, and is suitable for various spectrum applications.
According to the multispectral short-wave infrared detector based on the GaSb photonic crystal plate, the GaSb photonic crystal plate is integrated on the surface of the second-class superlattice PBIN detection unit, so that a highly integrated multispectral detection system is realized, and spectral analysis and spectral imaging application can be executed more accurately and flexibly. The innovative method has wide application prospect in a plurality of fields including scientific research, medical diagnosis and industrial application.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (5)
1. The multispectral short-wave infrared detector based on the GaSb photonic crystal plate is characterized by comprising a second-class superlattice PBIN detection unit and a GaSb photonic crystal plate integrated on a GaSb cover layer of the second-class superlattice PBIN detection unit;
the GaSb photonic crystal plate comprises a plurality of crystal plate units, and the periods of the crystal plate units are different and the lattice constants are different; and each crystal plate unit is provided with a plurality of detection holes, and the hole sizes of the detection holes of the plurality of crystal plate units are different.
2. The multispectral short-wave infrared detector of claim 1, wherein the second-class superlattice PBIN detection unit comprises a substrate, and a buffer layer grown on the substrate;
and a P region, a B region, an I region and an N region are sequentially grown on the buffer layer.
3. The multispectral short-wave infrared detector of claim 2, wherein the P-region comprises a first 6InAs/1GaSb/5AlSb/1GaSb structure of 126 cycles; performing Be doping on the first 6InAs/1GaSb/5AlSb/1GaSb structure;
the region B comprises 47 cycles of a 5AlAsSb/2GaSb structure, and the 5AlAsSb/2GaSb structure is subjected to Be doping;
the I region comprises a 45-cycle/GaAs/4 InAs/1GaSb/5AlSb/1GaSb structure and a 278-cycle second 6InAs/1GaSb/5AlSb/1GaSb structure;
the N region comprises a third 6InAs/1GaSb/5AlSb/1GaSb structure with 50 periods; and the third 6InAs/1GaSb/5AlSb/1GaSb structure is doped with Si.
4. The multispectral short-wave infrared detector of claim 4, wherein the/GaAs/4 InAs/1GaSb/5AlSb/1GaSb structure is an undoped structure; the second 6InAs/1GaSb/5AlSb/1GaSb structure is an undoped structure.
5. The short wave infrared detector of claim 4, wherein said third 6InAs/1GaSb/5AlSb/1GaSb structurally grows a GaSb cap layer.
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