CN101494243A - Photon crystal coupling narrowband response quantum well infrared detector - Google Patents
Photon crystal coupling narrowband response quantum well infrared detector Download PDFInfo
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- CN101494243A CN101494243A CNA200910046994XA CN200910046994A CN101494243A CN 101494243 A CN101494243 A CN 101494243A CN A200910046994X A CNA200910046994X A CN A200910046994XA CN 200910046994 A CN200910046994 A CN 200910046994A CN 101494243 A CN101494243 A CN 101494243A
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Abstract
The invention discloses a quantum well infrared detector of a photonic crystal coupling narrowband response. A photonic crystal is combined with a quantum well infrared detecting unit; and the photonic crystal, as a coupling unit, is directly nested in the infrared detecting unit. The modulation of a periodic surface structure and the photonic crystal to photon state leads the response of the quantum well infrared detecting unit to specific wave bands to be strengthened, while the response to other wave bands is restrained, thus achieving the detection of narrow band. Compared with the traditional quantum well detector, the detector has the advantages as follows: firstly, response wave band is narrow. The detector can regulate the position of peak response wavelength through the regulation and control of the photonic crystal to the photon state and the self structure control of the quantum well; secondly, the detection efficiency of the peak wavelength is high. Due to the realization of the control of the photon state, the detection efficiency is improved; and thirdly, user-oriented design is facilitated. New design dimension is provided for the regulation and control of the photon state, thus being more convenient for optimizing the matching property of response wave band of product according to the needs of the users.
Description
Technical field
The present invention relates to LONG WAVE INFRARED quantum well detector technology, specifically be meant a kind of photon crystal coupling narrowband response quantum well infrared detector.
Background technology
In nearest 20 years, along with the fast development of low-dimensional materials, the laboratory research of quantum trap infrared detector and business development are very active.Compared with traditional cadmium-telluride-mercury infrared detector, the advantage of quantum well detector is the good uniformity of material, and device making technics maturation, anti-irradiation, cost be low, for the focal plane array detector, these advantages performances more obvious.At present, generally good is that GaAs/AlGaAs Multiple Quantum Well detector has suitable future in the long wave band application facet.But,, have only electric vector could from the ground state transition to excitation state, be caused the variation of conductivity to realize the detection of device by the Electron absorption in the subband to infrared light perpendicular to the incident light of Multiple Quantum Well aufwuchsplate according to quantum mechanics transition selection rule.Generally speaking, infrared radiation need be taked certain measure (optical coupling) to make radiation be detected device and absorb perpendicular to the incident of quantum trap growth face.At present, people generally take grating coupled mode, but, this coupled modes are made the quantum well detector response wave band and are in a kind of very awkward condition---and can not satisfy the requirement of wide response wave band device performance, also can't reach the narrowband device performance demands of specific response wavelength.
Photonic crystal is to introduce periodically dielectric constant modulation, a kind of microstructure that the cycle of its medium dielectric constant microwave medium can be compared with optical wavelength by the whole bag of tricks artificially.The cyclic variation of dielectric function can be modulated the state model of photon in the material, makes that the photon state density of characteristic frequency increases in the material, and the photon state density of other frequency reduces.If the feature that can utilize photonic crystal to regulate and control for photon state realizes that a kind of Infrared Detectors of super narrowband response has significant application value for this reason.
Summary of the invention
The purpose of this invention is to provide a kind of photon crystal coupling narrowband response quantum well infrared detector, solve existing grating coupling quantum trap infrared detector response wave band broad and the lower problem of response, realize the Infrared Detectors of a kind of super narrow-band spectral response and peak value wavelength response rate.
Basic structural feature of the present invention is that photonic crystal is combined with quantum well infrared unit, and photonic crystal directly is nested in the infrared detecting unit as coupling unit.Because in the plane vertical with the direction of growth, exist the periodicity that is similar to two-dimensional grating to repeat on two vertical direction, this structure at first can partly be converted into vertical incidence light the along continuous straight runs transmission, improves the quantum efficiency of quantum well probe unit.And, we make the photon state density that is in the response peak position significantly increase, and the photon state density of other response frequency scopes reduce by the regulation and control of photonic crystal to photon state, thereby limited quantum well probe response waveband width effectively, the response wave band of the detector that narrowed.
Based on above-mentioned mentality of designing, technical solution of the present invention is: on the quantum trap infrared detector material that has grown into, make periodically cylindrical grooves array by lithography, depth of groove arrives in the cycle multiple quantum well layer, shown in accompanying drawing 1,2,3.And on groove part deposition silica dioxide medium, Sheng Chang GaAs/AlGaAs material is different with the silica dioxide medium material dielectric constant already, so periodically the inside, quantum well unit that is modulated at of dielectric constant forms photonic crystal, realizes selectively coupled to the vertical incidence light wavelength.
Device architecture is determined as follows:
Lattice constant a
x, a
yWith cylindrical hole diameter D, can be according to the dielectric constant of silicon dioxide and GaAs/AlGaAs material, the needs that reach selected specific response wavelength X are regulated, and its magnitude is a micron.
Lattice constant: a
x=a
y=λ/3 μ m.
The diameter of dielectric cylinder: D=0.4a
xμ m.
The etching depth of dielectric cylinder hole: T
1＜H＜T
2, T wherein
1Be emitter n type Doped GaAs layer (1) and Al
0.15Ga
0.85The thickness sum of As barrier layer (2), T
2Be emitter n type Doped GaAs layer (1), Al
0.15Ga
0.85The thickness sum of As barrier layer (2) and multiple quantum well layer (3).
The present invention uses photonic crystal to embody a concentrated expression of with respect to the reinforcement of two-dimensional grating performance as the advantage of quantum well infrared unit light coupling element and promotes.The photonic crystal optical coupling possesses on the one hand and has improved two-dimensional grating and partly changes the incident light direction to the ability that is parallel to the quantum well plane, on the other hand owing to the regulation and control of photonic crystal to photon state, strengthen the density of states of specific wavelength incident light in material, and suppress the density of states of other wavelength incident light in material, realize narrow band detection performance.
Description of drawings
Fig. 1 is a photon crystal coupling narrowband response quantum well infrared detecting unit structural representation of the present invention;
Among the figure: 6---cylindric silica dioxide medium is filled.
Fig. 2 is the top view of photon crystal coupling narrowband response quantum well infrared detecting unit of the present invention.
Fig. 3 is the end view at section place shown in Fig. 2 arrow of the present invention;
Among the figure: 1---go up emitter n type Doped GaAs layer;
2---Al
0.15Ga
0.85The As barrier layer;
3---multiple quantum well layer;
4---following emitter n type Doped GaAs layer;
5---the GaAs substrate.
Fig. 4 is the comparison of photon crystal coupling narrowband response quantum well infrared detecting unit optogalvanic spectra of the present invention and the quantum well infrared unit light current spectrum of ordinary two dimensional grating.
Embodiment
According to technical solution of the present invention, we are example with the photon crystal coupling narrowband response quantum well infrared detecting unit of response wave length peak value about λ=15 μ m, in conjunction with the accompanying drawings the implementation method of 1,2 and 3 funerary objects spares.
GaAs/AlGaAs material of the present invention utilizes the molecular beam epitaxy technique growth.
Said multiple quantum well layer has 50 cycles, and each cycle comprises the Al of 1 60nm
0.15Ga
0.85The GaAs quantum well layer of As barrier layer and 1 7nm, the doping content of quantum well are 2.5 * 10
17Cm
-3Emitter is respectively the GaAs that the n type mixes up and down, and doping content is 2.5 * 10
17Cm
-3
The thickness of last emitter n type Doped GaAs layer is 1 μ m, Al
0.15Ga
0.85The thickness of As barrier layer is 47nm, that is:
T
1＝1.0μm；
T
2＝4.4μm。
Utilize the cylindric hole of photoetching technique etching periodic arrangement on epitaxially grown quantum well unit, the hole degree of depth arrives in the multiple quantum well layer, and in cylindric hole the deposition of silica medium, form the periodic modulation of dielectric constant.
The main structure parameters design of photonic crystal is as follows:
Lattice constant: a
x=a
y=5 μ m.
The diameter of dielectric cylinder: D=2 μ m.
The etching depth of dielectric cylinder hole: H=1.3 μ m
Device is concrete at first to be reduced to 35K with the device working temperature in using, and regulates operating voltage to 2 volt.For relatively counting, can simultaneously the two-dimensional grating coupling quantum well infrared detecting unit of routine be tested simultaneously and use under identical condition of work.
Systematic function is as follows:
The probe unit optogalvanic spectra is under uniform temperature and operating voltage situation, the curve that the explorer response electric current changes with lambda1-wavelength, and it can reflect the wave band response characteristic of detector.Photon crystal coupling narrowband response quantum well infrared detecting unit and the expection optogalvanic spectra of ordinary two dimensional grating coupling quantum well infrared detecting unit under 35K and 2V operating voltage are shown among Fig. 4, and photon crystal coupled as can be seen coupling has better narrow wave property compared with the ordinary two dimensional grating.It can be the bandwidth reduction of detector more than 10 times, if further optimize photon crystal structure, such response wave band compression factor can further be promoted, thereby satisfy the demand that a lot of gas molecule vibrational spectrums are surveyed.
Claims (4)
1. a photon crystal coupling narrowband response quantum well infrared detector is characterized in that: the photonic crystal as coupling unit that is nested with Two dimensional Distribution on the described Infrared Detectors.
2. a kind of photon crystal coupling narrowband response quantum well infrared detector according to claim 1 is characterized in that: the structure of described photonic crystal is:
Lattice constant: a
x=a
y=λ/3 μ m;
The diameter of dielectric cylinder: D=0.4a
xμ m;
Dielectric cylinder hole etching depth: T
1＜H＜T
2
Wherein λ is the centre wavelength of explorer response, T
1Be emitter n type Doped GaAs layer (1) and Al
0.15Ga
0.85The thickness sum of As barrier layer (2), T
2Be emitter n type Doped GaAs layer (1), Al
0.15Ga
0.85The thickness sum of As barrier layer (2) and multiple quantum well layer (3).
3. a kind of photon crystal coupling narrowband response quantum well infrared detector according to claim 1 is characterized in that: described Infrared Detectors is a GaAs/AlGaAs Multiple Quantum Well detector.
4. a kind of photon crystal coupling narrowband response quantum well infrared detector according to claim 1 is characterized in that: the packing material of described photonic crystal dielectric cylinder hole is a silicon dioxide.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200910046994XA CN101494243A (en) | 2009-03-04 | 2009-03-04 | Photon crystal coupling narrowband response quantum well infrared detector |
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|---|---|---|---|
| CNA200910046994XA CN101494243A (en) | 2009-03-04 | 2009-03-04 | Photon crystal coupling narrowband response quantum well infrared detector |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101949836A (en) * | 2010-08-25 | 2011-01-19 | 华中科技大学 | Thermal radiation infrared transmitting and probing integrated device |
| CN102097520A (en) * | 2010-11-29 | 2011-06-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Photonic crystal coupling type multicolor quantum well infrared detector |
| CN104916713A (en) * | 2015-05-28 | 2015-09-16 | 东南大学 | Gallium-nitride-based ultraviolet detector with photonic crystals acting as incident window |
| CN108231923A (en) * | 2016-12-15 | 2018-06-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of infrared detector and preparation method thereof |
| CN109755332A (en) * | 2018-12-11 | 2019-05-14 | 惠科股份有限公司 | A kind of manufacturing method thereof of photoreceptor, panel and photoreceptor |
| CN117747693B (en) * | 2023-11-22 | 2024-06-28 | 广州市南沙区北科光子感知技术研究院 | Multispectral shortwave infrared detector based on GaSb photon crystal plate |
-
2009
- 2009-03-04 CN CNA200910046994XA patent/CN101494243A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101949836A (en) * | 2010-08-25 | 2011-01-19 | 华中科技大学 | Thermal radiation infrared transmitting and probing integrated device |
| CN101949836B (en) * | 2010-08-25 | 2011-11-30 | 华中科技大学 | Thermal radiation infrared transmitting and probing integrated device |
| CN102097520A (en) * | 2010-11-29 | 2011-06-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Photonic crystal coupling type multicolor quantum well infrared detector |
| CN104916713A (en) * | 2015-05-28 | 2015-09-16 | 东南大学 | Gallium-nitride-based ultraviolet detector with photonic crystals acting as incident window |
| CN108231923A (en) * | 2016-12-15 | 2018-06-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of infrared detector and preparation method thereof |
| CN108231923B (en) * | 2016-12-15 | 2019-10-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of infrared detector and preparation method thereof |
| CN109755332A (en) * | 2018-12-11 | 2019-05-14 | 惠科股份有限公司 | A kind of manufacturing method thereof of photoreceptor, panel and photoreceptor |
| CN117747693B (en) * | 2023-11-22 | 2024-06-28 | 广州市南沙区北科光子感知技术研究院 | Multispectral shortwave infrared detector based on GaSb photon crystal plate |
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Open date: 20090729 |