CN117747441A - Circuit preparation method, conductive film and semiconductor device - Google Patents
Circuit preparation method, conductive film and semiconductor device Download PDFInfo
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- CN117747441A CN117747441A CN202311699927.4A CN202311699927A CN117747441A CN 117747441 A CN117747441 A CN 117747441A CN 202311699927 A CN202311699927 A CN 202311699927A CN 117747441 A CN117747441 A CN 117747441A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000010408 film Substances 0.000 claims abstract description 242
- 238000009713 electroplating Methods 0.000 claims abstract description 108
- 229910052751 metal Inorganic materials 0.000 claims abstract description 98
- 239000002184 metal Substances 0.000 claims abstract description 98
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 238000000034 method Methods 0.000 claims abstract description 83
- 238000005530 etching Methods 0.000 claims abstract description 73
- 230000001681 protective effect Effects 0.000 claims abstract description 64
- 239000004020 conductor Substances 0.000 claims abstract description 62
- 230000008569 process Effects 0.000 claims abstract description 39
- 239000010409 thin film Substances 0.000 claims abstract description 33
- 238000001035 drying Methods 0.000 claims abstract description 32
- 239000000853 adhesive Substances 0.000 claims abstract description 15
- 230000001070 adhesive effect Effects 0.000 claims abstract description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 54
- 238000004140 cleaning Methods 0.000 claims description 49
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 44
- 238000007747 plating Methods 0.000 claims description 41
- 239000012498 ultrapure water Substances 0.000 claims description 36
- 238000004519 manufacturing process Methods 0.000 claims description 34
- 239000003921 oil Substances 0.000 claims description 34
- 239000002253 acid Substances 0.000 claims description 33
- 239000000243 solution Substances 0.000 claims description 33
- 230000004913 activation Effects 0.000 claims description 31
- 238000002386 leaching Methods 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 28
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 22
- 238000005488 sandblasting Methods 0.000 claims description 22
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 17
- 238000001039 wet etching Methods 0.000 claims description 17
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 16
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 16
- 239000003795 chemical substances by application Substances 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 239000011259 mixed solution Substances 0.000 claims description 11
- 239000012459 cleaning agent Substances 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 238000005406 washing Methods 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims description 8
- 238000001771 vacuum deposition Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 7
- 230000001464 adherent effect Effects 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000003344 environmental pollutant Substances 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- 231100000719 pollutant Toxicity 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 238000007788 roughening Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 181
- 239000011135 tin Substances 0.000 description 7
- 238000005237 degreasing agent Methods 0.000 description 4
- 239000013527 degreasing agent Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000008719 thickening Effects 0.000 description 3
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses a circuit preparation method, a conductive film and a semiconductor device. The preparation method comprises the following steps: preparing a conductor thin film layer on a substrate with an adhesive metal film layer; preparing a patterned mask layer on the conductor film layer; performing first electroplating treatment on the conductor film layer with the mask layer to form an electroplating film layer, and then performing drying treatment; performing second electroplating treatment on the electroplating film layer to form a first protective film layer; removing the mask layer, and performing first etching treatment on the exposed conductor film layer; performing third electroplating treatment on the exposed part of the metal film layer and the first protective film layer after the first etching treatment to form a second protective film layer; coarsening the second protective film layer to remove the part of the second protective film layer; and carrying out second etching treatment on the roughened exposed part of the adhesion metal film layer. The invention can carry out three-dimensional package on the circuit pattern wiring, reduces the wire removing process, reduces the process cost and improves the efficiency.
Description
Technical Field
The present disclosure relates to the field of electronic manufacturing and electroplating technologies, and in particular, to a circuit manufacturing method, a conductive film, and a semiconductor device.
Background
In the electroplating field, when the patterned multilayer metal thickening electroplating is carried out, the circuit pattern is difficult to be subjected to multilayer three-dimensional coating of a surface wiring structure under the condition that no independent interconnection power-on lead exists, for example, in the copper interconnection electroplating with low oxidation resistance, reliability risks are easily generated due to the fact that three-dimensional coating is not formed on the side surface of the pattern wiring, and finally, the pattern circuit is invalid.
Along with the increasing demand of metal interconnection on the surfaces of various substrates, the relative cost is lower, copper and nickel become the preferred materials for wiring on the surfaces of the substrates in various industries based on the relatively low cost, and the copper and nickel surfaces are required to be coated with protective layers because the copper and nickel have very low oxidation resistance, so that the long-term reliability of circuits is ensured. At present, oxidation resistance modes of various industries are various, wherein in order to ensure high reliability and relatively low cost, the traditional technology generally adopts an electroplating mode to protect the surfaces of copper and nickel wiring.
The scheme of carrying out complete cladding protection on the copper or nickel interconnection surface in the traditional technology is that after copper or nickel is intercommunicated and electroplated by adopting a single lead mode, the lead is removed, the lead part is thinner, but the lead port is not wrapped, and some patterns cannot form pattern alignment wrapping due to thinner seams, so that the process is long and the reliability is low.
Disclosure of Invention
Based on this, it is necessary to provide a circuit manufacturing method. The circuit preparation method has few working procedures, high efficiency, mass production realization and low cost.
An embodiment of the application provides a circuit preparation method.
A method of manufacturing a circuit comprising the steps of:
providing a substrate having an adherent metal film layer;
preparing a conductor film layer on the adhesion metal film layer;
preparing a patterned mask layer on the conductor film layer;
performing first electroplating treatment on the conductor film layer with the mask layer to form an electroplating film layer;
performing second electroplating treatment on the electroplating film layer to form a first protective film layer;
removing the mask layer, and performing first etching treatment on the exposed conductor film layer;
performing third electroplating treatment on the exposed part of the adhesion metal film layer after the first etching treatment and the first protective film layer to form a fully covered second protective film layer;
coarsening a part of the second protective film connected with the adhesion metal film to remove the part of the second protective film;
and carrying out second etching treatment on the adhesion metal film layer.
In some of these embodiments, the substrate comprises a ceramic substrate, a silicon wafer, an insulating substrate, or a semiconductor substrate.
In some of these embodiments, the ceramic substrate comprises an alumina ceramic substrate, an aluminum nitride ceramic substrate; and/or the semiconductor substrate comprises a solar cell.
In some of these embodiments, the substrate with the adherent metal film layer is prepared by: cleaning the substrate by adopting a cleaning agent to remove surface pollutants, wherein the cleaning agent comprises hydrofluoric acid, hydrochloric acid and pure water, and the volumes of the hydrofluoric acid, the hydrochloric acid and the pure water are 2-5 mL:2-5 mL:100mL;
and preparing the adhesion metal film layer on the substrate by adopting a vacuum coating method.
In some of these embodiments, the circuit preparation method further satisfies at least one of the following conditions:
(1) The preparation material of the adhesive metal film layer comprises metal Al, cr, ni, mn, pd, bi, nb, ta, pa, V, ti and an alloy consisting of one or more of W;
(2) The preparation material of the adhesive metal film layer comprises Al, cr, ni, mn, pd, bi, nb, ta, pa, V, ti or W metal nitride or metal oxide.
In some embodiments, the thickness of the adhesion metal film layer is 100 nm-200 nm.
In some embodiments, the thickness of the conductor thin film layer is 20 nm-500 nm.
In some embodiments, the method for preparing the patterned mask layer on the conductor film layer comprises the following steps:
the mask layer is prepared from one or more of printing ink, photoresist and dry film;
and/or preparing the mask layer on the conductor film layer by screen printing, spraying or spin coating when the mask layer is made of a non-photosensitive material, and preparing the mask layer on the conductor film layer by coating, exposure with a mask plate or developing technology when the mask layer is made of a photosensitive material.
In some embodiments, when the conductive thin film layer with the mask layer is subjected to a first electroplating treatment to form an electroplating film layer, the method specifically comprises the following steps:
sequentially carrying out oil removal treatment and cleaning treatment on the conductor film layer by adopting an oil removal agent, and then carrying out acid leaching activation treatment and cleaning treatment;
and carrying out first electroplating treatment on the conductor film layer.
In some of these embodiments, the first electroplating process is performed while satisfying at least one of the following conditions:
(1) When the oil is removed, the oil removing time is at least 40s;
(2) In the acid leaching activation treatment, hydrochloric acid with the mass concentration of 5% -15% is adopted for acid leaching activation for at least 40s;
(3) And in the cleaning treatment, high-purity water is adopted for cleaning for at least 60 seconds.
In some of these embodiments, the substrate is placed in a copper plating solution or nickel plating solution at a current density of 0.5A/dm during the first electroplating process 2 ~15 A/dm 2 The following stepsAnd (3) selective electroplating, wherein the electroplating time is 30-200 s, the thickness of the electroplating film layer is 2-15 mu m, and after the electroplating is finished, high-purity water is adopted for cleaning for at least 60s and then drying is carried out.
In some embodiments, when the second electroplating treatment is performed on the electroplated film layer to form the first protective film layer, the method specifically includes the following steps:
sequentially carrying out oil removal treatment and cleaning treatment on the electroplating film layer by adopting an oil removing agent, and then carrying out acid leaching activation treatment and cleaning treatment;
and carrying out second electroplating treatment on the electroplating film layer.
In some of these embodiments, the second electroplating process is performed while satisfying at least one of the following conditions:
(1) In the degreasing treatment, the degreasing time is at least 40s,
(2) In the acid leaching activation treatment, hydrochloric acid with the mass concentration of 5% -15% is adopted for acid leaching activation for at least 40s;
(3) And in the cleaning treatment, high-purity water is adopted for cleaning for at least 60 seconds.
In some of these embodiments, the substrate is placed in a gold plating solution at a current density of 0.5A/dm during the second electroplating process 2 ~1 A/dm 2 The selective plating is carried out under the condition that or the substrate is placed in tinning liquid, the current density is 0.5A/dm 2 ~10 A/dm 2 And (3) carrying out selective electroplating for 3-15 min, wherein the thickness of the first protective film layer is 1-10 mu m, and after the electroplating is finished, cleaning the substrate with high-purity water for at least 60s and then drying the substrate.
In some embodiments, when the exposed conductor thin film layer is subjected to the first etching treatment, the method specifically includes the following steps:
carrying out first etching treatment on the exposed conductor film layer by adopting wet etching or plasma dry etching;
in wet etching, when the preparation material of the conductor film layer is Cu, the etching solution is a mixed solution of sulfuric acid, sodium persulfate and water, or a mixed solution of hydrogen peroxide, concentrated sulfuric acid and water, the etching time is 20s-120s, and when the preparation material of the conductor film layer is Ni, the etching solution is a mixed solution of nitric acid, sodium persulfate and water, and the etching time is 20s-100s;
in the dry plasma etching, the argon flow is more than 20sccm, the etching process pressure is 0.01 Pa-1 Pa, and the etching time is 10 s-1000 s.
In some of these embodiments, the circuit preparation method further satisfies at least one of the following conditions:
(1) The mass volume ratio of the sulfuric acid to the sodium persulfate to the water is 2 mL-3 mL, 1 g-5 g and 10 g-20 g;
(2) The volume ratio of the hydrogen peroxide to the concentrated sulfuric acid to the water is 1 mL-2 mL, 2 mL-4 mL, 20 mL-40 mL;
(3) The mass volume ratio of the nitric acid to the sodium persulfate to the water is 2 mL-3 mL, 1 g-5 g and 10 g-20 g.
In some embodiments, when the exposed portion of the adhesion metal film layer after the first etching treatment and the first protective film layer are subjected to a third electroplating treatment to form a fully covered second protective film layer, the method specifically includes the following steps;
sequentially carrying out oil removal treatment and cleaning treatment on the exposed part of the adhesion metal film layer and the first protective film layer by adopting an oil removal agent, and then carrying out acid leaching activation treatment and cleaning treatment;
and carrying out third electroplating treatment on the exposed part of the adhesion metal film layer and the first protective film layer to form a fully covered second protective film layer.
In some of these embodiments, the third electroplating process is performed while satisfying at least one of the following conditions:
(1) When the oil is removed, the oil removing time is at least 40s;
(2) In the acid leaching activation treatment, hydrochloric acid with the mass concentration of 5% -15% is adopted for acid leaching activation for at least 40s;
(3) And in the cleaning treatment, high-purity water is adopted for cleaning for at least 60 seconds.
In some of these embodiments, the substrate is placed in a gold plating solution, silver plating solution, or tin plating solution at a current density of 0.5A/dm during the third electroplating process 2 ~40 A/dm 2 And (3) carrying out selective electroplating for 30-200 s, wherein the thickness of the second protective film layer (700) is 0.5-1 mu m, and after the electroplating is finished, cleaning the substrate by high-purity water for at least 60s and then drying the substrate.
In some embodiments, when roughening the second protective film layer connected to the adhesion metal film layer, the method specifically includes the following steps:
carrying out wet sand blasting treatment on part of the second protective film layer to remove part of the second protective film layer connected to the adhesive metal film layer, wherein the granularity of the silicon carbide is 100-400 meshes, the sand blasting pressure is 0.1-0.3 mpa, the sand blasting time is 20-100 s, the water washing flow rate is 2-10L/min, and the water washing time is 20-100 s;
drying treatment is carried out after wet sand blasting treatment, the drying temperature is 50-80 ℃, and the drying time is 20-100 s.
In some embodiments, the second etching treatment is performed on the adhesion metal film layer, which specifically includes the following steps:
carrying out second etching treatment on the adhesion metal film layer by adopting wet etching or plasma dry etching;
During wet etching, HF acid is adopted for etching, the etching time is 20-100 s, and the temperature is 25-30 ℃;
and during dry plasma etching, the etching pressure is 0.1 Pa-1 Pa, the etching gas is argon, the argon flow is more than 20sccm, and the etching time is 10s-1000s.
Another embodiment of the present application also provides a conductive film.
The conductive film is prepared by adopting the preparation method.
Another embodiment of the present application also provides a semiconductor device.
A semiconductor device includes a conductive film.
According to the circuit preparation method, the circuit pattern wiring can be three-dimensionally wrapped in an electroplating thickening mode under the condition that no independent interconnection leads are arranged. Specifically, the adhesion metal film layer of the application is composed of alloy or simple substance metal, and the sheet resistance is between 3 ohm and 10 ohm due to the fact that the thickness of the adhesion metal film layer is thinner, so that under the condition of applying certain power, the current of circuits with different sheet resistances is different, the side face of a final circuit can be plated, three-dimensional package of patterns is finally formed, and due to the fact that the surface of a non-pattern area is plated with a small amount of metal layer, the metal on the adhesion metal film layer with low adhesion surface is removed through coarsening with lower strength such as a sand blasting process, and finally the adhesion metal film layer is etched.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that are required to be used in the description of the embodiments will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained from these drawings without inventive effort to a person skilled in the art.
For a more complete understanding of the present application and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings. Wherein like reference numerals refer to like parts throughout the following description.
Fig. 1 to fig. 6 are schematic process flow diagrams of a circuit manufacturing method according to an embodiment of the invention.
Description of the reference numerals
100. A substrate; 200. adhering a metal film layer; 300. a conductor thin film layer; 400. a mask layer; 500. a plating film layer; 600. a first protective film layer; 700. and a second protective film layer.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the invention, whereby the invention is not limited to the specific embodiments disclosed below.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
In the description of the present invention, the meaning of a number is one or more, the meaning of a number is two or more, and greater than, less than, exceeding, etc. are understood to exclude the present number, and the meaning of a number is understood to include the present number. The description of the first and second is for the purpose of distinguishing between technical features only and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
The embodiment of the application provides a circuit preparation method, which aims to solve the problems that in the method for removing a lead after copper or nickel is protected by adopting an independent lead mode for intercommunication in the traditional technology, the lead port is not wrapped, and patterns cannot form pattern alignment wrapping due to thinner seams, so that the risk problems of long working procedure and low reliability are finally caused. The circuit preparation method will be described below with reference to the accompanying drawings.
Referring to fig. 1, fig. 1 is a schematic process flow diagram of a circuit preparation method according to an embodiment of the present application. The circuit fabrication method of the present application can be used for multi-layer electroplated circuit fabrication applications.
In order to more clearly illustrate the structure of the circuit fabrication method, the circuit fabrication method will be described with reference to the accompanying drawings.
Exemplary, a method of manufacturing a circuit includes the steps of:
providing a substrate 100 having an adherent metal film layer 200;
preparing a conductor thin film layer 300 on the adhesion metal film layer 200 by adopting a vacuum coating method;
preparing a patterned mask layer 400 on the conductor thin film layer 300, as shown in fig. 1;
performing first electroplating treatment on the exposed part of the conductor film layer 300 with the mask layer 400 to form an electroplating film layer 500, and then performing drying treatment;
performing a second electroplating process on the electroplated film 500 to form a first protective film 600, as shown in fig. 2;
removing the mask layer 400, as shown in fig. 3; the exposed conductor thin film layer 300 is subjected to a first etching process, as shown in fig. 4;
performing a third electroplating process on the exposed portion of the adhesion metal film layer 200 and the first protection film layer 600 after the first etching process to form a fully covered second protection film layer 700, as shown in fig. 5;
coarsening a part of the second protective film 700 connected to the adhesion metal film 200 to remove the part of the second protective film 700; and
the adhesion metal film layer 200 is subjected to a second etching process, as shown in fig. 6. The substrate 100 is exposed after the second etching process.
In some of these embodiments, the conductor thin film layer 300 is made of Cu or Ni.
In some of these embodiments, the substrate 100 comprises a ceramic substrate, a silicon wafer, an insulating substrate, or a semiconductor substrate.
In some of these embodiments, ceramic substrate 100 comprises an alumina ceramic substrate, an aluminum nitride ceramic substrate; and/or the semiconductor substrate comprises a solar cell.
In some of these embodiments, the substrate 100 with the adherent metal film layer 200 is prepared by: cleaning the substrate 100 by using a cleaning agent to remove surface pollutants, wherein the cleaning agent comprises hydrofluoric acid, hydrochloric acid and pure water, and the volumes of the hydrofluoric acid, the hydrochloric acid and the pure water are 2-5 mL, 2-5 mL and 100mL;
an adhesive metal film layer 200 is prepared on the substrate 100 using a vacuum coating method.
In some of these embodiments, the preparation material of the adhesion metal film layer 200 includes an alloy composed of one or more of the metal Al, cr, ni, mn, pd, bi, nb, ta, pa, V, ti and W.
In some of these embodiments, the preparation material of the adhesion metal film layer 200 includes Al, cr, ni, mn, pd, bi, nb, ta, pa, V, ti or W metal nitride or metal oxide.
In some embodiments, the thickness of the adhesion metal film layer 200 is 100nm to 200nm.
In some embodiments, the thickness of the conductive thin film layer 300 is 20nm to 500nm.
In some of these embodiments, the conductive thin film layer 300 may be made of the same material as the plating layer 500 or may be made of different materials.
In some of these embodiments, the patterned mask layer 400 is prepared on the conductor thin film layer 300, and includes the following steps: the mask layer 400 is made of one or more materials selected from ink, photoresist and dry film.
In some of these embodiments, when mask layer 400 is a non-photosensitive material, mask layer 400 is prepared on conductor thin film layer 300 by screen printing, spray coating, or spin coating, and when mask layer 400 is a photosensitive material, mask layer 400 is prepared on conductor thin film layer 300 by a coating, masking exposure, or developing technique.
In some embodiments, when the first electroplating treatment is performed on the conductive thin film layer 300 with the mask layer 400 to form the electroplating film layer 500, the method specifically includes the following steps:
sequentially carrying out oil removal treatment and cleaning treatment on the conductor film layer 300 by adopting an oil removal agent, and then carrying out acid leaching activation treatment and cleaning treatment;
The first plating process is performed on the conductor thin film layer 300.
In some of these embodiments, the first electroplating process is performed while satisfying at least one of the following conditions:
(1) When in oil removal treatment, the oil removal time is at least 40s;
(2) During acid leaching activation treatment, hydrochloric acid with mass concentration of 5% -15% is adopted for acid leaching activation for at least 40s;
(3) During the cleaning treatment, high-purity water is used for cleaning for at least 60 seconds.
In some of these embodiments, during the first electroplating process, the substrate 100 is placed in a copper or nickel plating solution consistent with the material of the conductor film layer 300 at a current density of 0.5A/dm 2 ~15 A/dm 2 And (3) carrying out selective electroplating for 5 min-15 min, wherein the thickness of the electroplating film layer 500 is 2-15 mu m, and after the electroplating is finished, adopting high-purity water to clean for at least 60s and then drying.
In some embodiments, when the first protective film 600 is formed by performing the second electroplating process on the electroplated film 500, the method specifically includes the following steps:
sequentially carrying out oil removal treatment and cleaning treatment on the electroplating film layer 500 by adopting an oil removal agent, and then carrying out acid leaching activation treatment and cleaning treatment;
the plating layer 500 is subjected to a second plating process.
In some of these embodiments, the first protective film layer 600 is made of a material including, but not limited to, gold, silver, tin.
In some of these embodiments, the second electroplating process is performed while satisfying at least one of the following conditions:
(1) When in oil removal treatment, the oil removal time is at least 40s;
(2) During acid leaching activation treatment, hydrochloric acid with mass concentration of 5% -15% is adopted for acid leaching activation for at least 40s;
(3) During the cleaning treatment, high-purity water is used for cleaning for at least 60 seconds.
In some of these embodiments, during the second electroplating process, the substrate 100 is placed in a gold plating solution at a current density of 0.5A/dm 2 ~1 A/dm 2 With selective plating or placing the substrate 100 in a tin plating solution at a current density of 0.5A/dm 2 ~10 A/dm 2 And (3) carrying out selective electroplating for 3-15 min, wherein the thickness of the first protective film layer 600 is 1-10 mu m, and after the electroplating is finished, cleaning the substrate with high-purity water for at least 60s and then drying the substrate.
In some embodiments, the first etching treatment is performed on the exposed conductor thin film layer 300, which specifically includes the following steps:
performing first etching treatment on the exposed conductor film layer 300 by adopting wet etching or plasma dry etching; in the wet etching, when the preparation material of the conductor thin film layer 300 is Cu, the etching solution is a mixed solution of sulfuric acid, sodium persulfate and water, or a mixed solution of hydrogen peroxide, concentrated sulfuric acid and water, the etching time is 20s-120s, and when the preparation material of the conductor thin film layer 300 is Ni, the etching solution is a mixed solution of nitric acid, sodium persulfate and water, the etching time is 20s-100s. In the dry plasma etching, the argon flow is more than 20sccm, the etching process pressure is 0.01 Pa-1 Pa, and the etching time is 10 s-1000 s.
In some embodiments, the mass volume ratio of sulfuric acid, sodium persulfate and water is 2 mL-3 mL, 1 g-5 g, 10 g-20 g.
In some embodiments, the volume ratio of the hydrogen peroxide to the concentrated sulfuric acid to the water is 1 mL-2 mL, 2 mL-4 mL, 20 mL-40 mL.
In some embodiments, the mass volume ratio of nitric acid, sodium persulfate and water is 2 mL-3 mL, 1 g-5 g, 10 g-20 g.
In some embodiments, when the exposed portion of the adhesion metal film layer 200 after the first etching treatment and the first protection film layer 600 are subjected to the third electroplating treatment to form the fully covered second protection film layer 700, the method specifically includes the following steps;
sequentially carrying out oil removal treatment and cleaning treatment on the exposed part of the adhesion metal film layer 200 and the first protection film layer 600 by adopting an oil removal agent, and then carrying out acid leaching activation treatment and cleaning treatment;
and performing a third electroplating treatment on the exposed part of the adhesion metal film layer 200 and the first protection film layer 600 to form a fully covered second protection film layer 700.
In some of these embodiments, the second protective film 700 is made of materials including, but not limited to, the inert metals gold, silver, tin.
In some of these embodiments, the third electroplating process is performed while satisfying at least one of the following conditions:
(1) When in oil removal treatment, the oil removal time is at least 40s;
(2) During acid leaching activation treatment, hydrochloric acid with mass concentration of 5% -15% is adopted for acid leaching activation for at least 40s;
(3) During the cleaning treatment, high-purity water is used for cleaning for at least 60 seconds.
In some embodiments, the degreasing agent is a degreasing agent of model S-15S, available from Chongqing, inc.
In some of these embodiments, during the third electroplating process, the substrate 100 is placed in a gold, silver or tin plating solution at a current density of 0.5A/dm 2 ~10 A/dm 2 And then, carrying out selective electroplating for 30-200 s, wherein the thickness of the second protective film layer 700 is 0.5-1 mu m, and after the electroplating is finished, adopting high-purity water to clean for at least 60s and then drying.
In some embodiments, when roughening the second protective film 700 connected to the metal film 200, the method specifically includes the following steps:
carrying out wet sand blasting treatment on part of the second protective film 700 to remove part of the second protective film 700 connected to the adhesive metal film 200, wherein the granularity of the silicon carbide is 100-400 meshes, the sand blasting pressure is 0.1-0.3 mpa, the sand blasting time is 20-100 s, the water washing flow rate is 2-10L/min, the water washing time is 20-100 s, and finally part of the second protective film 700 on the surface of the adhesive metal film 200 is removed;
Drying treatment is carried out after wet sand blasting treatment, the drying temperature is 50-80 ℃, and the drying time is 20-100 s.
In some embodiments, when the second etching treatment is performed on the adhesion metal film layer 200, the method specifically includes the following steps:
performing a second etching treatment on the adhesion metal film layer 200 by wet etching or plasma dry etching;
during wet etching, the etching liquid comprises copper chloride, hydrochloric acid and pure water, wherein the volume ratio of the copper chloride to the hydrochloric acid to the pure water is 1-2 mL, 5-5 mL is 50mL, the etching time is 20 s-100 s, and the temperature is 25-30 ℃.
When the wet etching cannot be performed by adopting the plasma dry etching, the etching pressure is 0.1 Pa-1 Pa, the etching gas is argon, the argon flow is more than 20sccm, and the etching time is 10s-1000s.
Another embodiment of the present application also provides a conductive film.
A conductive film is prepared by a preparation method.
Another embodiment of the present application also provides a semiconductor device.
A semiconductor device includes the above conductive film.
In some of these embodiments, the semiconductor device includes a discrete device semiconductor, an optoelectronic semiconductor, a logic IC, an analog IC, a memory, or the like.
Another embodiment of the present application also provides a solar cell.
A solar cell comprises the conductive film.
Example 1
The present embodiment provides a conductive film prepared by the following circuit preparation method.
A method of manufacturing a circuit comprising the steps of:
(1) The substrate 100 is selected, and the substrate 100 is a silicon wafer. The substrate 100 is cleaned by a cleaning agent to remove surface pollutants, wherein the cleaning agent comprises hydrofluoric acid, hydrochloric acid and pure water, and the volumes of the hydrofluoric acid, the hydrochloric acid and the pure water are 2-5 ml/100 ml.
(1) Preparing an adhesion metal film layer 200 on the surface of the substrate 100 by a vacuum coating method; the thickness of the adhesion metal film layer 200 is 100nm. The adhesive metal film layer 200 is made of metal Al.
(2) The conductor film layer 300 is prepared on the adhesion metal film layer 200 by adopting a vacuum coating method, the thickness of the conductor film layer 300 is 20nm, and the preparation material of the conductor film layer 300 is Cu.
(3) A patterned mask layer 400 is prepared on the conductive thin film layer 300, as shown in fig. 1, the preparation material of the mask layer 400 includes photoresist, and the mask layer 400 is prepared on the conductive thin film layer 300 by using a mask exposure technology, as shown in fig. 1.
(4) The conductor film layer 300 is degreased for 40S by adopting a degreasing agent S-15S, cleaned for 60S by adopting high-purity water, then is subjected to acid leaching activation for 40S by adopting hydrochloric acid with the mass concentration of 10%, and is cleaned for 60S by adopting high-purity water.
The exposed portion of the conductor film layer 300 was subjected to a first plating treatment to form a plating film layer 500, as shown in FIG. 2, in which the substrate 100 was placed in a copper plating solution at a current density of 0.5A/dm 2 And then, carrying out selective electroplating for 20min, wherein the thickness of the electroplating film layer 500 is 2 mu m, and after the electroplating is finished, adopting high-purity water to clean for 60s and then drying.
(5) The electroplating film 500 is deoiled for 40S by adopting a deoiling agent S-15S, cleaned for 60S by adopting high-purity water, then is subjected to acid leaching activation by adopting hydrochloric acid with the mass concentration of 10% for 40S, and cleaned for 60S by adopting high-purity water. The second electroplating process is performed on the electroplated film 500, and the second electroplating process is performed on the electroplated film 500 to form a first protective film 600, as shown in fig. 2. In the second electroplating treatment, the substrate 100 was placed in a tin plating solution at a current density of 1A/dm 2 And then, performing selective electroplating for 10min, wherein the thickness of the first protective film layer 600 is 3 mu m, and after the electroplating is finished, cleaning the substrate with high-purity water for 60s and then drying the substrate. See the second step of figure 1.
(6) Mask layer 400 is removed, as shown in fig. 3.
Performing first etching treatment on the exposed conductor film layer 300 outside the electroplating film layer 500 by adopting wet etching; the etching solution is a mixed solution of sulfuric acid, sodium persulfate and water, wherein the mass volume ratio of the sulfuric acid to the sodium persulfate to the water is 2mL, 1g to 10g, and the etching time is 20s, and is shown in FIG. 4.
(7) The exposed part of the adhesion metal film layer 200 and the first protective film layer 600 is deoiled for 40S by adopting a deoiling agent S-15S, cleaned for 60S by adopting high-purity water, and then activated for 40S by adopting hydrochloric acid pickling with the mass concentration of 10%, and cleaned for 60S by adopting high-purity water.
The substrate 100 was placed in a tin plating solution at a current density of 2A/dm 2 Then, a third electroplating treatment is performed for 200s to form a second protective film 700 connected to the adhesive metal film 200 and the first protective film 600, the thickness of the second protective film 700 is 1 μm, and after the electroplating is completed, high purity water is usedWashing for 60s and drying. See fig. 5.
(8) Performing wet sand blasting treatment on a part of the second protective film 700 on the adhered metal film 200 to remove the part of the second protective film 700, wherein the grain size of the silicon carbide is 100 meshes, the sand blasting pressure is 0.1Mpa, the sand blasting time is 100s, the water washing flow rate is 2L/min, and the water washing time is 20s; drying treatment is carried out after wet sand blasting treatment, the drying temperature is 50 ℃, and the drying time is 100s.
(9) The adhesion metal film layer 200 is subjected to a second etching treatment by wet etching to expose a part of the substrate 100, wherein the wet etching is performed by using a KOH solution with a mass concentration of 5%, the etching time is 30s, and the temperature is 30 ℃. See fig. 6.
Example 2
The present embodiment provides a conductive film prepared by the following circuit preparation method.
A method of manufacturing a circuit comprising the steps of:
(1) The substrate 100 is selected, and the substrate 100 is an alumina ceramic substrate 100. The substrate 100 is cleaned to remove surface pollutants by using a cleaning agent, wherein the cleaning agent comprises hydrofluoric acid, hydrochloric acid and pure water, and the volumes of the hydrofluoric acid, the hydrochloric acid and the pure water are 2mL:2mL:100mL.
(1) Preparing an adhesion metal film layer 200 on the surface of the substrate 100 by a vacuum coating method; the thickness of the adhesion metal film layer 200 is 200nm. The preparation material of the adhesion metal film layer 200 comprises metal Ni and Cr alloy.
(2) The conductor thin film layer 300 was prepared on the adhesion metal film layer 200 by a vacuum coating method, and the thickness of the conductor thin film layer 300 was 500nm. The material for preparing the conductor thin film layer 300 is Ni.
(3) A patterned masking layer 400 is prepared on the conductor thin film layer 300 by screen printing using an ink, as shown in fig. 1.
(4) The exposed part of the conductor film layer 300 is deoiled for 40S by adopting a deoiling agent S-15S, cleaned for 60S by adopting high-purity water, then activated for 40S by adopting hydrochloric acid pickling with the mass concentration of 10%, and cleaned for 60S by adopting high-purity water.
The exposed portion of the conductor film layer 300 is subjected to a first electroplating treatment to form an electroplating film layer 500, as shown in FIG. 2, in which the substrate 100 is placed in a nickel plating solution at a current density of 5A/dm 2 And then, carrying out selective electroplating for 30min, wherein the thickness of the electroplating film layer 500 is 8 mu m, and after the electroplating is finished, adopting high-purity water to clean for 60s and then drying.
(5) The conductor film layer 300 is degreased for 40S by adopting a degreasing agent S-15S, cleaned for 60S by adopting high-purity water, then is subjected to acid leaching activation for 40S by adopting hydrochloric acid with the mass concentration of 10%, and is cleaned for 60S by adopting high-purity water.
The second electroplating process is performed on the electroplated film 500, and the second electroplating process is performed on the electroplated film 500 to form a first protective film 600, as shown in fig. 2. In the second plating treatment, the substrate 100 was placed in a gold plating solution at a current density of 0.5A/dm 2 And then, selective electroplating is carried out for 30min, the thickness of the first protective film layer 600 is 3 mu m, and after the electroplating is finished, high-purity water is adopted for cleaning for 60s, and then drying treatment is carried out.
(6) Mask layer 400 is removed, as shown in fig. 3.
The exposed conductor film layer 300 is subjected to a first etching treatment by wet etching, wherein an etching solution is a mixed solution of nitric acid, sodium persulfate and water, the mass volume ratio of the nitric acid to the sodium persulfate to the water is 2mL:1g:10g, and the etching time is 100s, which is shown in FIG. 4.
(7) The deoiling agent S-15S is adopted to deoil the exposed part of the adhesion metal film layer 200 and the exposed part of the electroplating film layer 500 for 40S, high-purity water is adopted to clean for 60S, hydrochloric acid with the mass concentration of 10% is adopted to perform acid leaching activation for 40S, and high-purity water is adopted to clean for 60S.
Placing the substrate 100 in gold plating solution at a current density of 31A/dm 2 And then, performing a third electroplating treatment for 1min to form a second protective film 700 connected to the adhesive metal film 200 and the protective film 600, wherein the thickness of the second protective film 700 is 1 μm, and after the electroplating is finished, cleaning the substrate with high-purity water for 60s and then drying the substrate. See fig. 5.
(8) Performing wet sand blasting treatment on a part of the second protective film 700 on the adhered metal film 200 to remove the part of the second protective film 700, wherein the grain size of the silicon carbide is 400 meshes, the sand blasting pressure is 0.2Mpa, the sand blasting time is 20s, the water washing flow rate is 10L/min, and the water washing time is 20s; drying treatment is carried out after wet sand blasting treatment, the drying temperature is 80 ℃, and the drying time is 20s.
(9) And performing second etching treatment on the adhesion metal film layer 200 by adopting plasma dry etching to remove part of the adhesion metal film layer 200, exposing part of the substrate 100, wherein the etching pressure is 1Pa, the etching gas is argon, the flow of the argon is more than 20sccm, and the etching time is 100s. See fig. 6.
The conductive films prepared in example 1 and example 2 were subjected to performance test. The test results are shown in Table 1.
TABLE 1
In summary, according to the above-mentioned circuit manufacturing method, the circuit pattern wiring can be three-dimensionally wrapped by electroplating thickening without separate interconnection leads. Specifically, the adhesion metal film layer 200 is composed of alloy or simple substance metal, and the sheet resistance is between 3 ohm and 10 ohm due to the fact that the thickness of the adhesion metal film layer 200 is thinner, so that under the condition of applying certain power, the current of circuits with different sheet resistances is different, the side face of the final circuit can be plated, three-dimensional package of patterns is finally formed, the surface of a non-pattern area is plated with a small amount of metal layers, the low adhesion surface metal on the adhesion metal film layer 200 is removed through coarsening with lower strength such as a sand blasting process, and finally the adhesion metal film layer 200 is etched.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (21)
1. A method of manufacturing a circuit comprising the steps of:
providing a substrate (100) having an adherent metal film layer (200);
preparing a conductor thin film layer (300) on the adhesion metal film layer (200);
Preparing a patterned mask layer (400) on the conductor thin film layer (300);
performing a first electroplating treatment on the conductor thin film layer (300) with the mask layer (400) to form an electroplating film layer (500);
performing a second electroplating process on the electroplating film layer (500) to form a first protection film layer (600);
removing the mask layer (400), and performing a first etching treatment on the exposed conductor film layer (300);
performing third electroplating treatment on the exposed part of the adhesion metal film layer (200) and the first protective film layer (600) after the first etching treatment to form a fully covered second protective film layer (700);
coarsening a part of the second protective film (700) connected to the adhesive metal film (200) to remove the part of the second protective film (700);
and performing a second etching treatment on the adhesion metal film layer (200).
2. The circuit manufacturing method according to claim 1, characterized in that the substrate (100) comprises a ceramic substrate, a silicon wafer, an insulating substrate, or a semiconductor substrate, the ceramic substrate comprising an alumina ceramic substrate, an aluminum nitride ceramic substrate, and the semiconductor substrate comprising a solar cell.
3. The method of manufacturing a circuit according to claim 1, wherein the substrate (100) with the adherent metal film layer (200) is manufactured by: cleaning the substrate (100) by using a cleaning agent to remove surface pollutants, wherein the cleaning agent comprises hydrofluoric acid, hydrochloric acid and pure water, and the volumes of the hydrofluoric acid, the hydrochloric acid and the pure water are 2-5 mL:2-5 mL:100mL;
the adhesive metal film layer (200) is prepared on the substrate (100) by a vacuum coating method.
4. The circuit fabrication method of claim 1, further satisfying at least one of the following conditions:
(1) The preparation material of the adhesive metal film layer (200) comprises metal Al, cr, ni, mn, pd, bi, nb, ta, pa, V, ti and an alloy consisting of one or more of W;
(2) The preparation material of the adhesive metal film layer (200) comprises Al, cr, ni, mn, pd, bi, nb, ta, pa, V, ti or W metal nitride or metal oxide.
5. The circuit fabrication method of claim 1, further satisfying at least one of the following conditions:
(1) The thickness of the adhesion metal film layer (200) is 100 nm-200 nm;
(2) The thickness of the conductor film layer (300) is 20-500 nm.
6. The method for manufacturing a circuit according to any one of claims 1 to 5, wherein, when manufacturing a patterned mask layer (400) on the conductor thin film layer (300), the method comprises the steps of:
the preparation material of the mask layer (400) comprises one or more of printing ink, photoresist and dry film;
and/or when the mask layer (400) is made of a non-photosensitive material, the mask layer (400) is prepared on the conductor film layer (300) through a screen printing, spraying or spin coating mode, and when the mask layer (400) is made of a photosensitive material, the mask layer (400) is prepared on the conductor film layer (300) through a coating, masking plate exposure or developing technology.
7. The method for manufacturing a circuit according to any one of claims 1 to 5, wherein when the conductive thin film layer (300) having the mask layer (400) is subjected to a first electroplating treatment to form the electroplating film layer (500), the method specifically comprises the steps of:
sequentially carrying out oil removal treatment and cleaning treatment on the conductor film layer (300) by adopting an oil removal agent, and then carrying out acid leaching activation treatment and cleaning treatment;
A first electroplating treatment is performed on the conductor thin film layer (300).
8. The method of manufacturing a circuit according to claim 7, wherein at least one of the following conditions is satisfied when the first plating treatment is performed:
(1) When the oil is removed, the oil removing time is at least 40s;
(2) In the acid leaching activation treatment, hydrochloric acid with the mass concentration of 5% -15% is adopted for acid leaching activation for at least 40s;
(3) And in the cleaning treatment, high-purity water is adopted for cleaning for at least 60 seconds.
9. The method for manufacturing a circuit according to any one of claims 1 to 5 and 8, wherein during the first electroplating treatment, the method comprises the steps ofThe substrate (100) was placed in a copper plating solution or a nickel plating solution at a current density of 0.5A/dm 2 ~15 A/dm 2 And (3) carrying out selective electroplating for 30-200 s, wherein the thickness of the electroplating film layer (500) is 2-15 mu m, and after the electroplating is finished, cleaning the substrate with high-purity water for at least 60s and then drying the substrate.
10. The method for manufacturing a circuit according to any one of claims 1 to 5 and 8, wherein when the second plating treatment is performed on the plating film layer (500) to form the first protective film layer (600), the method specifically comprises the steps of:
sequentially carrying out oil removal treatment and cleaning treatment on the electroplating film layer (500) by adopting an oil removal agent, and then carrying out acid leaching activation treatment and cleaning treatment;
And performing a second electroplating treatment on the electroplating film layer (500).
11. The method of manufacturing a circuit according to claim 10, wherein at least one of the following conditions is satisfied when the second plating treatment is performed:
(1) When the oil is removed, the oil removing time is at least 40s;
(2) In the acid leaching activation treatment, hydrochloric acid with the mass concentration of 5% -15% is adopted for acid leaching activation for at least 40s;
(3) And in the cleaning treatment, high-purity water is adopted for cleaning for at least 60 seconds.
12. The method of manufacturing a circuit according to any one of claims 1 to 5, 8, and 11, wherein the substrate (100) is placed in a gold plating solution at a current density of 0.5A/dm during the second plating treatment 2 ~1 A/dm 2 The selective plating is carried out under conditions or the substrate (100) is placed in a tin plating solution at a current density of 0.5A/dm 2 ~10 A/dm 2 And (3) carrying out selective electroplating for 3-15 min, wherein the thickness of the first protective film layer (600) is 1-10 mu m, and after the electroplating is finished, cleaning the substrate with high-purity water for at least 60s and then drying the substrate.
13. The method for manufacturing a circuit according to any one of claims 1 to 5, 8, and 11, wherein when the exposed conductor thin film layer (300) is subjected to the first etching process, the method specifically comprises the steps of:
Performing a first etching treatment on the exposed conductor thin film layer (300) by adopting wet etching or plasma dry etching;
in the wet etching, when the preparation material of the conductor film layer (300) is Cu, the etching solution is a mixed solution of sulfuric acid, sodium persulfate and water, or a mixed solution of hydrogen peroxide, concentrated sulfuric acid and water, the etching time is 20s-120s, and when the preparation material of the conductor film layer (300) is Ni, the etching solution is a mixed solution of nitric acid, sodium persulfate and water, and the etching time is 20s-100s;
in the dry plasma etching, the argon flow is more than 20sccm, the etching process pressure is 0.01 Pa-1 Pa, and the etching time is 10 s-1000 s.
14. The circuit fabrication method of claim 13, further satisfying at least one of the following conditions:
(1) The mass volume ratio of the sulfuric acid to the sodium persulfate to the water is 2 mL-3 mL, 1 g-5 g and 10 g-20 g;
(2) The volume ratio of the hydrogen peroxide to the concentrated sulfuric acid to the water is 1 mL-2 mL, 2 mL-4 mL, 20 mL-40 mL;
(3) The mass volume ratio of the nitric acid to the sodium persulfate to the water is 2 mL-3 mL, 1 g-5 g and 10 g-20 g.
15. The method for manufacturing a circuit according to any one of claims 1 to 5, 8, 11, and 14, wherein when a third electroplating process is performed on the exposed portion of the adhesion metal film layer (200) and the first protective film layer (600) after the first etching process to form a fully covered second protective film layer (700), the method specifically comprises the following steps;
Sequentially carrying out oil removal treatment and cleaning treatment on the exposed part of the adhesion metal film layer (200) and the first protection film layer (600) by adopting an oil removal agent, and then carrying out acid leaching activation treatment and cleaning treatment;
and performing third electroplating treatment on the exposed part of the adhesion metal film layer (200) and the first protective film layer (600) to form a fully covered second protective film layer (700).
16. The circuit manufacturing method according to claim 15, wherein at least one of the following conditions is satisfied when the third plating treatment is performed:
(1) When the oil is removed, the oil removing time is at least 40s;
(2) In the acid leaching activation treatment, hydrochloric acid with the mass concentration of 5% -15% is adopted for acid leaching activation for at least 40s;
(3) And in the cleaning treatment, high-purity water is adopted for cleaning for at least 60 seconds.
17. The method of manufacturing a circuit according to any one of claims 1 to 5, 8, 11, 14, 16, wherein, in the third plating treatment, the substrate (100) is placed in a gold plating solution, silver plating solution, or tin plating solution at a current density of 0.5A/dm 2 ~40 A/dm 2 And (3) carrying out selective electroplating for 30-200 s, wherein the thickness of the second protective film layer (700) is 0.5-1 mu m, and after the electroplating is finished, cleaning the substrate by high-purity water for at least 60s and then drying the substrate.
18. The method for manufacturing a circuit according to any one of claims 1 to 5, 8, 11, 14, and 16, wherein when roughening the second protective film (700) on the portion connected to the adhesion metal film (200), the method specifically comprises the steps of:
carrying out wet sand blasting treatment on part of the second protective film (700) to remove part of the second protective film (700) connected to the adhesive metal film (200), wherein the granularity of silicon carbide is 100-400 meshes, the sand blasting pressure is 0.1-0.3 mpa, the sand blasting time is 20-100 s, the water washing flow rate is 2-10L/min, and the water washing time is 20-100 s;
drying treatment is carried out after wet sand blasting treatment, the drying temperature is 50-80 ℃, and the drying time is 20-100 s.
19. The method for manufacturing a circuit according to any one of claims 1 to 5, 8, 11, 14, and 16, wherein the second etching treatment is performed on the adhesion metal film layer (200), specifically comprising the steps of:
performing second etching treatment on the adhesion metal film layer (200) by adopting wet etching or plasma dry etching;
during wet etching, HF acid is adopted for etching, the etching time is 20-100 s, and the temperature is 25-30 ℃;
And during dry plasma etching, the etching pressure is 0.1 Pa-1 Pa, the etching gas is argon, the argon flow is more than 20sccm, and the etching time is 10s-1000s.
20. A conductive film prepared by the preparation method of any one of claims 1 to 19.
21. A semiconductor device comprising the conductive film according to claim 20.
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| CN202311699927.4A CN117747441A (en) | 2023-12-08 | 2023-12-08 | Circuit preparation method, conductive film and semiconductor device |
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| CN202311699927.4A CN117747441A (en) | 2023-12-08 | 2023-12-08 | Circuit preparation method, conductive film and semiconductor device |
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| CN117747441A true CN117747441A (en) | 2024-03-22 |
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