CN117740162A - Infrared photoelectric detector testing device and testing method - Google Patents
Infrared photoelectric detector testing device and testing method Download PDFInfo
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- CN117740162A CN117740162A CN202311753775.1A CN202311753775A CN117740162A CN 117740162 A CN117740162 A CN 117740162A CN 202311753775 A CN202311753775 A CN 202311753775A CN 117740162 A CN117740162 A CN 117740162A
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- photoelectric detector
- preamplifier
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- 238000012360 testing method Methods 0.000 title claims abstract description 72
- 238000001228 spectrum Methods 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 24
- 230000000903 blocking effect Effects 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 12
- 230000005457 Black-body radiation Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010998 test method Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 description 8
- 238000003825 pressing Methods 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004438 eyesight Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a testing device and a testing method of an infrared photoelectric detector, wherein the testing device comprises the following components: the infrared photoelectric detector comprises an infrared photoelectric detector object stage (comprising a clamp and a test seat), a matching resistor array and a signal reading circuit. The device connects the detector and the matching resistor in series to a circuit with fixed bias voltage through the clamp and the test seat, when the modulated blackbody light source irradiates the surface of the detector, the voltage changes at two ends of the detector are caused, the signal is taken out through the reading circuit, and the signal value is read out in the lock-in amplifier and the spectrum analyzer.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectron testing, in particular to an infrared photoelectric detector testing device and an infrared photoelectric detector testing method.
Background
The infrared photoelectric detector is a semiconductor device and can convert radiation energy into electric energy, and three atmospheric windows exist in the earth atmosphere in an infrared band, so that the infrared photoelectric detector has important application in the fields of imaging detection, night vision, no-light detection, robot vision, aerospace, missile guidance and the like.
At present, research of infrared photoelectric detectors is mainly focused on material mechanism and device performance, most of ways for testing the testing performance of the infrared photoelectric detectors mainly adopt laser source pumping, and pumping energy of laser is too high to reflect real world real conditions. For example, CN116642580a is a device and method for testing laser damage of a photoelectric detector, and CN105606345A is a device and method for testing frequency response of a photoelectric detector based on wavelength coding technology.
Secondly, the resistance of the material to be tested spans greatly, and the accurate matching resistance and the detector resistance are difficult to find to match, so that the testing precision is affected.
In addition, because the material to be measured needs to be electrically connected with the circuit, the traditional mode of using the probe station to connect is too tedious, long in time and low in efficiency.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide an infrared photoelectric detector testing device and testing method, so as to solve the problems that the laser radiation source is difficult to reflect real world real situation, the matching resistance affects the testing precision, the probe station connection mode is too complicated, and the testing efficiency is low.
Therefore, the technical scheme of the invention is as follows:
according to a first aspect of the present invention, there is provided an infrared photodetector test device comprising:
one end of the infrared photoelectric detector objective table is connected with the matching resistor, and the other end of the infrared photoelectric detector objective table is connected with the power supply ground;
the matching resistor array comprises a plurality of resistor switches, each resistor switch controls a plurality of resistors, each resistor switch is connected in series, one end of each resistor switch is connected with the positive electrode of the power supply, and the other end of each resistor switch is connected with the detector;
the signal reading circuit comprises a blocking circuit and a preamplifier, one end of the blocking circuit is connected to the connection node of the detector and the matching resistor array, and the output end of the preamplifier is connected to an external phase-locked amplifier and a spectrometer.
Further, the infrared photoelectric detector objective table comprises a test fixture and a test seat;
the test fixture is a metal flat clamp, is welded on a bonding pad of the circuit board through soldering tin, and is used for fixing photoelectric materials prepared on the substrate in a test area;
the test seat is internally provided with a metal electrode column, a metal contact is arranged in the metal electrode column, the metal contact has elasticity, and the bottom of the metal electrode column is welded with the circuit board.
Further, the matching resistor array comprises six resistance switches with different magnitudes, each resistance switch controls nine resistors, the six resistance switches are sequentially connected in series, and the nine resistors controlled by each resistance switch are connected in parallel so as to realize resistance control of stepping 1k and resistance ranges of 1k to 999999 k.
Further, the signal reading circuit comprises a blocking circuit and a preamplifier, wherein the blocking circuit is composed of a capacitor and a resistor, one end of the capacitor in the blocking circuit is connected to a node where the detector object stage is connected with the matching resistor array, the other end of the capacitor is connected with the preamplifier and the resistor, one end of the resistor is connected with the preamplifier and the capacitor, the other end of the resistor is connected to the power ground, one end of the preamplifier is connected with the capacitor and the resistor, the other end of the preamplifier is used as a signal output, and the other end of the preamplifier is connected to an external phase-locked amplifier and a spectrum analyzer.
Further, the metal flat clip is a metal sheet which has elasticity and can rotate.
Further, the metal sheet is made of one of copper, alloy and steel.
Further, a color silk screen mark is arranged at a preset position of the test fixture.
Further, the resistance switch of the matching resistor array adopts a 9-bit dial switch, and the resistor adopts a chip resistor.
Further, an interface used by the signal output end of the pre-amplifier is a SWA interface, and is connected with the phase-locked amplifier and the spectrum analyzer through an SMA-BNC line.
According to a second aspect of the present invention, there is provided a method of testing detector materials and devices using an infrared photodetector testing device as described above, the method comprising:
if the unpackaged material is tested, placing the material at a designated position according to the object stage color silk-screen mark, and fixing the material by using a metal clamp to connect the material into a circuit;
if the packaged device is tested, the pin of the device is directly inserted into the electrode column groove, so that the pin of the device is tightly contacted with the electrode column contact, and circuit connection is established;
and starting the modulated blackbody radiation source, radiating the blackbody radiation source onto an infrared photoelectric detector, reading out signals on a lock-in amplifier and a spectrum analyzer, and testing the infrared photoelectric detector.
Compared with the prior art, the invention has the beneficial effects that:
1) The invention uses the modulated blackbody radiation source radiation detector, has small radiation energy, and can reflect real world real situation more than laser.
2) The invention uses the resistor array as the matching resistor to realize the matching of the resistance value of 1k-999999k, and has high precision and simple operation.
3) The invention uses the metal clamp and the test seat to connect the detector, and the mode of replacing the sample to be tested is simple and has high efficiency.
Drawings
In the drawings, which are not necessarily drawn to scale, like numerals may describe similar components in different views. The same reference numerals with letter suffixes or different letter suffixes may represent different instances of similar components. The accompanying drawings illustrate various embodiments by way of example in general and not by way of limitation, and together with the description and claims serve to explain the inventive embodiments. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. Such embodiments are illustrative and not intended to be exhaustive or exclusive of the present apparatus or method.
FIG. 1 is a schematic plan view of an infrared photodetector testing device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram showing a structure of a test stage in an infrared photoelectric detector testing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a matching resistor array in an infrared photodetector test device according to an embodiment of the invention;
FIG. 4 is a graph showing a comparison of single test time of an infrared photodetector test device and a conventional probe station test system according to an embodiment of the present invention;
FIG. 5 is a graph of black body response test results of device 1 tested using an infrared photodetector test device at 520HZ photo voltage;
fig. 6 is a graph of black body response test results of the device 1 tested at 320HZ photo voltage using an infrared photodetector test setup.
Reference numerals:
1-1-bias power positive electrode, 1-2-bias power ground, 2-1-matching resistor array, 2-2-matching resistor array dial switch, 2-3-matching resistor, 3-1-blackbody radiation source, 3-2-modulation chopper, 4-1-detector test stage, 4-2-stage test seat, 4-3-stage test metal fixture, 4-4-metal fixture pad, 4-5-metal fixture press plate, 4-6-test seat electrode column slot, 4-7-detector material mounting area, 4-8 metal fixture rotation shaft, 5-1-blocking capacitor, 5-2-bleeder resistor, 5-3-preamplifier, 6-SWA interface.
Detailed Description
The following examples are given for the purpose of better illustration only, but the invention is not limited to the examples. Those skilled in the art will appreciate from the foregoing disclosure that various modifications and adaptations of the embodiments described herein can be made to other examples without departing from the scope of the invention.
The invention will now be further described with reference to the accompanying drawings.
Example 1: testing of lead selenide infrared detector film materials
Referring to fig. 1,2 and 3, the invention provides an infrared photoelectric detector testing device, which is used for testing a lead selenide infrared detector film material:
firstly, cutting a material into small pieces with proper sizes, pressing down a metal clamp pressing piece 4-5 to enable the clamp to tilt, placing the material in a detector material installation area 4-7, putting down the metal clamp pressing piece 4-5 to fix, connecting the metal clamp pressing piece 4-5 serving as electrodes at two ends of the material to a wire through a bonding pad, connecting one section of the wire to a matching resistor, and connecting one end of the wire to a power ground.
And secondly, measuring the resistance values of two ends of the material by using a universal meter or a source meter, sequentially selecting corresponding resistance values from large to small in the matched resistor array according to the resistance value of the matched resistor 2-3, and stirring the matched resistor array dial switch 2-2 to adjust the total resistance value of the matched resistor array to be the same as the resistance value of the detector.
Then, a proper bias voltage is applied to the bias anode 1-1, the blackbody radiation source 3-1 and the frequency modulator 3-2 are started, and as the illumination resistance value of the detector changes, an alternating signal is output to the spectrum analyzer and the lock-in amplifier through the SWA interface 6 after passing through the blocking capacitor 5-1, the blocking circuit of the bleeder resistor 5-2 and the preamplifier 5-3, and the effective value is measured to be the response voltage signal of the infrared detector.
Then, the blackbody radiation source 3-1 is shielded, and the noise voltage signal is measured with a spectrum analyzer in a state where no incident radiation is present.
And finally, calculating the incident radiation power of the blackbody radiation source to calculate the specific detection rate, the noise equivalent power, the signal-to-noise ratio, the responsivity and other characteristic parameters of the infrared detector.
Test results referring to fig. 4,5 and 6, it can be seen from fig. 4 that the test time of the present embodiment is shorter than that of the conventional probe station test, and from fig. 5 and 6, the present test station can accurately reflect the infrared response and noise level of the laser and the blackbody, and it can be seen that the waveform of fig. 5 has more spikes, because the blackbody has a small radiation power, a low response, a large laser power, and a much larger response than noise, and thus the waveform is smoother.
Example 2 testing of lead selenide Infrared Detector Package
Referring to example 1, the thin film material in example 1 can be wire-bonded and vacuum-packaged to form a lead selenide infrared detector package device with stable and excellent performance, and when the package device is tested, only the pin of the device is required to be inserted into the electrode column groove of 4-6 to form close contact with the electrode column groove, and at the moment, the metal clamp pressing piece of 4-5 is not required, and the rest of the testing steps are identical to those of example 1.
The above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention, and are intended to be included within the scope of the appended claims and description.
Claims (10)
1. An infrared photodetector test device, comprising:
one end of the infrared photoelectric detector objective table is connected with the matching resistor, and the other end of the infrared photoelectric detector objective table is connected with the power supply ground;
the matching resistor array comprises a plurality of resistor switches, each resistor switch controls a plurality of resistors, each resistor switch is connected in series, one end of each resistor switch is connected with the positive electrode of the power supply, and the other end of each resistor switch is connected with the detector;
the signal reading circuit comprises a blocking circuit and a preamplifier, one end of the blocking circuit is connected to the connection node of the detector and the matching resistor array, and the output end of the preamplifier is connected to an external phase-locked amplifier and a spectrometer.
2. The infrared photodetector test device of claim 1, wherein the infrared photodetector stage comprises a test fixture and a test seat;
the test fixture is a metal flat clamp, is welded on a bonding pad of the circuit board through soldering tin, and is used for fixing photoelectric materials prepared on the substrate in a test area;
the test seat is internally provided with a metal electrode column, a metal contact is arranged in the metal electrode column, the metal contact has elasticity, and the bottom of the metal electrode column is welded with the circuit board.
3. The infrared photoelectric detector testing device according to claim 1, wherein the matching resistor array comprises six resistance switches with different magnitudes, each resistance switch controls nine resistors, the six resistance switches are sequentially connected in series, and the nine resistors controlled by each resistance switch are connected in parallel so as to realize resistance control of stepping 1k and resistance ranges 1k to 999999 k.
4. The infrared photoelectric detector testing device according to claim 1, wherein the signal readout circuit comprises a blocking circuit and a preamplifier, wherein the blocking circuit is composed of a capacitor and a resistor, one end of the capacitor in the blocking circuit is connected to a node where the detector stage is connected to the matching resistor array, the other end of the capacitor is connected to the preamplifier and the resistor, one end of the resistor is connected to the preamplifier and the capacitor, the other end of the resistor is connected to a power ground, one end of the preamplifier is connected to the capacitor and the resistor, the other end of the preamplifier is used as a signal output, and the other end of the preamplifier is connected to an external phase-locked amplifier and a spectrum analyzer.
5. The infrared photodetector testing device as defined in claim 2, wherein said metal flat clip is a resilient and rotatable metal sheet.
6. The infrared photodetector test device of claim 5, wherein said metal sheet is one of copper, an alloy, and steel.
7. The infrared photoelectric detector testing device according to claim 2, wherein a color screen mark is provided at a preset position of the test fixture.
8. The infrared photodetector test device of claim 1 wherein the resistive switches of the matching resistive array are 9-bit dip switches and the resistors are chip resistors.
9. The infrared photoelectric detector testing device according to claim 1, wherein the interface used by the signal output end of the pre-amplifier is a SWA interface, and is connected with the lock-in amplifier and the spectrum analyzer through an SMA-to-BNC line.
10. A method of testing detector materials and devices using an infrared photodetector testing device according to any one of claims 1 to 9, said method comprising:
if the unpackaged material is tested, placing the material at a designated position according to the object stage color silk-screen mark, and fixing the material by using a metal clamp to connect the material into a circuit;
if the packaged device is tested, the pin of the device is directly inserted into the electrode column groove, so that the pin of the device is tightly contacted with the electrode column contact, and circuit connection is established;
and starting the modulated blackbody radiation source, radiating the blackbody radiation source onto an infrared photoelectric detector, reading out signals on a lock-in amplifier and a spectrum analyzer, and testing the infrared photoelectric detector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311753775.1A CN117740162A (en) | 2023-12-18 | 2023-12-18 | Infrared photoelectric detector testing device and testing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311753775.1A CN117740162A (en) | 2023-12-18 | 2023-12-18 | Infrared photoelectric detector testing device and testing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117740162A true CN117740162A (en) | 2024-03-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311753775.1A Pending CN117740162A (en) | 2023-12-18 | 2023-12-18 | Infrared photoelectric detector testing device and testing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117740162A (en) |
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- 2023-12-18 CN CN202311753775.1A patent/CN117740162A/en active Pending
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