CN117721418A - Evaporation system and evaporation method - Google Patents
Evaporation system and evaporation method Download PDFInfo
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- CN117721418A CN117721418A CN202211104905.4A CN202211104905A CN117721418A CN 117721418 A CN117721418 A CN 117721418A CN 202211104905 A CN202211104905 A CN 202211104905A CN 117721418 A CN117721418 A CN 117721418A
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- 238000001704 evaporation Methods 0.000 title claims abstract description 519
- 230000008020 evaporation Effects 0.000 title claims abstract description 499
- 238000012806 monitoring device Methods 0.000 claims abstract description 58
- 230000007246 mechanism Effects 0.000 claims abstract description 41
- 230000005540 biological transmission Effects 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims description 74
- 238000007740 vapor deposition Methods 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 16
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- 230000000694 effects Effects 0.000 abstract description 11
- 239000010408 film Substances 0.000 description 42
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- 238000007747 plating Methods 0.000 description 27
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- 229910045601 alloy Inorganic materials 0.000 description 20
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 238000005286 illumination Methods 0.000 description 6
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- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
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- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
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- Physical Vapour Deposition (AREA)
Abstract
The application relates to an evaporation system and an evaporation method, wherein the evaporation system is provided with an evaporation cavity, an evaporation source, a bearing device, a monitoring device and a shielding device, the shielding device comprises an evaporation source baffle plate provided with an opening and a transmission mechanism, the evaporation source baffle plate is controlled to be switched between a closed state and an open state through the transmission mechanism, the evaporation source baffle plate can only reach the monitoring device through the opening in the closed state, and the evaporation source baffle plate can reach the monitoring device and a wafer borne by the bearing device in the open state. The evaporation source is in the preheating stage, and the control evaporation source baffle is in the closed state, and when the evaporation rate is determined to be stable according to the monitored evaporation rate and the preset evaporation rate, the control evaporation source baffle is in the open state, so that the evaporation source baffle is opened for evaporation when the evaporation rate is stable, the uniformity of the film deposited on the wafer is better, and the evaporation effect is improved.
Description
Technical Field
The present disclosure relates to the field of semiconductor manufacturing technologies, and in particular, to an evaporation system and an evaporation method.
Background
Light Emitting Diodes (LEDs) are widely accepted as fourth generation illumination sources or green sources. The LED has the characteristics of energy conservation, environmental protection, long service life, small volume and the like, is applied to various backlight sources, common illumination, decoration, display indication and other fields in a large number, and particularly in recent years, the whole LED industry is rapidly developed under the wide acceptance of the general illumination field by the public.
In the process of manufacturing an LED, film formation of an organic material and a metal material is performed by vacuum vapor deposition. Vacuum evaporation is a process method for evaporating and gasifying a coating material (or film material) by adopting a certain heating evaporation mode under a vacuum condition, and enabling particles to fly to the surface of a substrate to form a film by condensation. In the initial stage of vapor deposition, when the evaporation source begins to heat the coating material, the evaporation rate is unstable, which results in abnormal coating.
Therefore, how to improve the vapor deposition effect is a problem to be solved.
Disclosure of Invention
In view of the above-mentioned drawbacks of the related art, an object of the present application is to provide an evaporation system and an evaporation method, which aim to solve the problem of abnormal coating film due to unstable evaporation rate of an evaporation source in a preheating stage.
The application provides an evaporation system, include:
a vapor deposition cavity;
an evaporation source disposed on one side within the evaporation cavity, the evaporation source configured to heat a material to generate a vapor flow;
a carrying device disposed on a side of the evaporation cavity opposite to the evaporation source and on a flow path of the vapor flow, the carrying device being configured to carry a wafer;
a monitoring device disposed within the evaporation cavity and on a flow path of the vapor flow, the monitoring device configured to monitor an evaporation rate of the evaporation source; and
the shielding device is arranged in the evaporation cavity and comprises an evaporation source baffle plate with an opening and a transmission mechanism;
the evaporation source shutter has a closed state in which the evaporation source shutter is close to the evaporation source to block the vapor flow from reaching the wafer carried by the carrying device, and an open state in which the evaporation source shutter is away from the evaporation source so that the vapor flow reaches the wafer and the monitoring device, and the opening of the evaporation source shutter allows the vapor flow to pass therethrough to reach the monitoring device;
the transmission mechanism is connected with the evaporation source baffle, and is configured to control the evaporation source baffle to be switched from the closed state to the open state when the evaporation rate is determined to be stable.
Above-mentioned vaporization system, it is equipped with the evaporation cavity and sets up evaporation source, the load-carrying device in the evaporation cavity, monitoring device and shelter from the device, wherein shelter from the device including being equipped with open-ended evaporation source baffle and drive mechanism, control evaporation source baffle through drive mechanism and switch between closed state and open state, evaporation source baffle under closed state, the steam flow can only reach monitoring device through the opening, evaporation source baffle under open state, the steam flow can reach monitoring device and be born in the wafer that bears the device. The evaporation source is in the preheating stage, control the evaporation source baffle through drive mechanism to through monitoring device monitoring evaporation rate, confirm according to the evaporation rate of monitoring and predetermine evaporation rate that evaporation rate is in steadily, control the evaporation source baffle and be in open condition, make the steam flow reach the wafer in order to deposit the film on the wafer, then the evaporation system that this application provided has realized waiting that evaporation rate is in opening the evaporation source baffle and carrying out the evaporation when stabilizing, make the homogeneity of the film of deposit on the wafer better, and then promoted the evaporation effect.
Based on the same inventive concept, the present application also provides an evaporation method applied to the evaporation system as described above, comprising:
setting the preset evaporation rate corresponding to the evaporation source;
controlling the evaporation source shutter to be in the closed state, and controlling the evaporation source to heat a material to generate the vapor stream;
and when the evaporation rate is determined to be stable according to the evaporation rate of the evaporation source and the preset evaporation rate, controlling the evaporation source baffle to be in the opening state.
According to the evaporation method, the evaporation system with the shielding device is adopted, and the evaporation source baffle is opened for evaporation when the evaporation rate is determined to be stable, so that the uniformity of the film deposited on the wafer is better, and the evaporation effect is improved.
Drawings
Fig. 1 is a schematic structural diagram of an evaporation system according to an alternative embodiment of the present disclosure;
FIG. 2 is a schematic view of another vapor deposition system according to an alternative embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of another evaporation system according to an alternative embodiment of the present disclosure when the evaporation source baffle is driven to rotate by the rotation shaft;
fig. 4 is a schematic structural view of an evaporation source shutter in an evaporation system according to an alternative embodiment of the present disclosure;
fig. 5 is a schematic structural view of an evaporation source baffle plate in an evaporation system according to an alternative embodiment of the present disclosure;
fig. 6 is a schematic flow chart of an evaporation method according to another alternative embodiment of the present application;
fig. 7 is a schematic structural diagram of an evaporation system according to another alternative embodiment of the present disclosure;
fig. 8 is a schematic flow chart of an evaporation method according to another alternative embodiment of the present disclosure;
reference numerals illustrate:
10-evaporating cavity; 20-evaporating source; 30-a carrying device; 40-monitoring device; 50-shielding device; 51-evaporation source baffles; 52-a transmission mechanism; 511-opening; 41-crystal oscillator probe; 42-isolating cover; 53-a rotation axis; 54-hinge assembly; 541-fixing the connecting rod; 542—a movable link; 6-a first plane; 7-a second plane.
Detailed Description
In order to facilitate an understanding of the present application, a more complete description of the present application will now be provided with reference to the relevant figures. Preferred embodiments of the present application are shown in the accompanying drawings. This application may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
LEDs are widely accepted as fourth generation illumination sources or green sources. The LED has the characteristics of energy conservation, environmental protection, long service life, small volume and the like, is applied to various backlight sources, common illumination, decoration, display indication and other fields in a large number, and particularly in recent years, the whole LED industry is rapidly developed under the wide acceptance of the general illumination field by the public.
In the process of manufacturing an LED, film formation of an organic material and a metal material is performed by vacuum vapor deposition. Vacuum evaporation is a process method for evaporating and gasifying a coating material (or film material) by adopting a certain heating evaporation mode under a vacuum condition, and enabling particles to fly to the surface of a substrate to form a film by condensation. In the initial stage of vapor deposition, when the evaporation source begins to heat the coating material, the evaporation rate is unstable, which results in abnormal coating. Therefore, how to improve the vapor deposition effect is a problem to be solved.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
An alternative embodiment of the present application:
in order to improve the evaporation effect, the embodiment provides an evaporation system, please refer to fig. 1 to 5, which at least includes the following components:
a vapor deposition chamber 10;
an evaporation source 20 disposed at one side within the evaporation cavity 10, the evaporation source 20 being configured to heat a material to generate a vapor flow;
a carrying device 30 disposed at a side of the evaporation cavity 10 opposite to the evaporation source 20 and located on a flow path of the vapor flow, the carrying device 30 being configured to carry a wafer;
a monitoring device 40 disposed within the evaporation chamber 10 and located on a flow path of the vapor flow, the monitoring device 40 configured to monitor an evaporation rate of the evaporation source 20; and
a shielding device 50 disposed in the vapor deposition chamber 10, the shielding device 50 including an evaporation source baffle 51 having an opening 511 and a transmission mechanism 52;
the evaporation source shutter 51 has a closed state in which the evaporation source shutter 51 is close to the evaporation source 20 to block the vapor flow from reaching the wafer carried on the carrier 30, and an opening 511 of the evaporation source shutter 51 allows the vapor flow to pass to reach the monitoring device 40, and an open state in which the evaporation source shutter 51 is away from the evaporation source 20 so that the vapor flow reaches the wafer and the monitoring device 40; a transmission mechanism 52 is connected to the evaporation source shutter 51, the transmission mechanism 52 being configured to control the evaporation source shutter 51 to switch from a closed state to an open state upon determining that the evaporation rate monitored by the monitoring device 40 is stable.
The vapor deposition system provided in this embodiment is provided with a vapor deposition cavity 10, and an evaporation source 20, a carrying device 30, a monitoring device 40 and a shielding device 50 which are disposed in the vapor deposition cavity 10, wherein the shielding device 50 includes an evaporation source baffle 51 provided with an opening 511 and a transmission mechanism 52, the transmission mechanism 52 controls the evaporation source baffle 51 to switch between a closed state and an open state, in the closed state, the evaporation source baffle 51 can only reach the monitoring device 40 through the opening 511, in the open state, the vapor flow can reach the monitoring device 40 and a wafer carried by the carrying device 30. The evaporation source 20 is in the preheating stage, the evaporation source baffle 51 is controlled to be in a closed state through the transmission mechanism 52, the evaporation rate is monitored through the monitoring device 40, when the evaporation rate is determined to be stable according to the monitored evaporation rate and the preset evaporation rate, the evaporation source baffle 51 is controlled to be in an open state, so that the steam flow reaches the wafer to deposit the film on the wafer, and the evaporation system provided by the embodiment realizes that the evaporation source baffle 51 is opened for evaporation when the evaporation rate is stable, so that the uniformity of the film deposited on the wafer is better, and further the evaporation effect is improved.
In this embodiment, the vapor deposition chamber 10 includes a top wall, a bottom wall, and side walls, and an internal space defined by the top wall, the bottom wall, and the side walls. The shape of the vapor deposition chamber 10 is not limited in this embodiment, and the shape of the vapor deposition chamber 10 is not limited to a cylindrical shape or a cubic shape. The evaporation cavity 10 is also provided with an air outlet which is communicated with a vacuum pumping device arranged outside the evaporation cavity 10, and the vacuum pumping device comprises a vacuum pump and a pressure detector. Before evaporation starts, the internal space of the evaporation cavity 10 can be vacuumized by a vacuumizing device, and the pressure value in the evaporation cavity 10 is detected, so that the vacuum degree in the evaporation cavity 10 reaches the vacuum degree required during evaporation.
In this embodiment, the evaporation source 20 may be provided at the bottom wall of the evaporation chamber 10, or may be spaced apart from the bottom wall of the evaporation chamber 10. The heating method of the evaporation source 20 is not limited in this embodiment, and the heating method of the evaporation source 20 may be a heating method such as vapor deposition electron gun heating, resistance wire heating, or tungsten boat heating. The evaporation source 20 may also be provided with a control system electrically connected to the evaporation source 20 configured to switch on or off the heating of the evaporation source 20. The control system includes a proportional-integral-derivative controller (PID controller) configured to control the evaporation rate of the evaporation source 20, and may also have a display function. The number and materials of the evaporation sources 20 are not limited in this embodiment. The number of the evaporation sources 20 can be 1, 2, 4 or other values, and any one or a combination of several of gold, nickel and germanium can be selected as the material arranged in the evaporation sources 20. In one embodiment, the evaporation system includes an evaporation source 20, and the evaporation source 20 is provided with an alloy material formed of gold and nickel, so as to implement evaporation of the alloy film. In another embodiment, the evaporation system comprises two evaporation sources 20, the two evaporation sources 20 being provided with different elemental materials, one of the evaporation sources 20 being provided with gold and the other evaporation source 20 being provided with nickel, co-evaporation being achieved to obtain the alloy film. In the foregoing embodiment, when the alloy material is directly heated for evaporation, there is a possibility that liquid fractionation occurs in the same liquid alloy metal component at a certain temperature, and the evaporation amount of the alloy metal component after fractionation does not evaporate according to the mixing ratio of the alloy, so that the composition of the formed alloy film changes, and even the alloy film layering phenomenon occurs. When co-evaporating metal simple substance materials are adopted, no fractionation risk exists, doping is uniform, and the proportion of alloy film components is stable and uniform.
In this embodiment, the carrying device 30 may be disposed in the evaporation chamber 10 near the top wall. In this embodiment, the specific structure of the carrying device 30 is not limited, in a specific embodiment, the carrying device 30 includes a support rod and a plating pot, the support rod is fixedly connected with the center of the plating pot, and the support rod is fixed at the center of the top wall of the evaporation cavity 10 and connected with a driving member disposed outside the evaporation cavity 10, and drives the support rod and the plating pot to rotate together through the driving member. The shape of the plating pot can be arc, and the plating pot can be used for bearing a plurality of wafers, so that the plating efficiency is improved. In another embodiment, the carrying device 30 comprises a supporting frame and a plurality of plating baths, wherein each plating bath is a planetary plating bath capable of rotating and revolving. The support frame is fixed at the roof center of evaporation cavity 10 and is connected with the driving piece that sets up in evaporation cavity 10 outside, and a plurality of plating pot are connected with the support frame and are circumference distribution around the support frame, and each plating pot can be the slope setting and guarantee the evaporation surface orientation evaporation source 20 of plating pot, under the effect of driving piece, a plurality of plating pot revolve around the support frame. The bearing device 30 further comprises a rotation transmission mechanism corresponding to the plating pots, and under the action of the rotation transmission mechanism, the plating pots can revolve along with the support frame, and simultaneously realize the rotation of the plating pots around the axis of the plating pots, so that the plating efficiency and the plating quality are improved to a greater extent.
In this embodiment, the monitoring device 40 may be fixed on the top wall of the evaporation cavity 10 and extend to a position below the carrier device 30 and close to the side wall, or may be directly fixed on the side wall of the evaporation cavity 10 and located between the evaporation source 20 and the carrier device 30. The monitoring device 40 comprises a crystal oscillator probe 41, and the crystal oscillator probe 41 is positioned in the evaporation cavity 10. The vapor deposition system further includes a film thickness gauge electrically connected to the crystal oscillator probe 41, the film thickness gauge being located outside the vapor deposition chamber 10. The crystal oscillator probe 41 is configured to monitor real-time data such as the evaporation rate and the evaporation thickness of the evaporation source 20, and transmit the monitored real-time data to the film thickness gauge. The film thickness gauge is configured to receive real-time data transmitted by the crystal oscillator probe 41 and control the evaporation process according to the real-time data and preset data. The number of the monitoring devices 40 may be set to 1, 2, 4, or other values, and the number of the monitoring devices 40 may be set according to the number of the evaporation sources 20. In a specific embodiment, the evaporation system includes a plurality of evaporation sources 20 and a plurality of monitoring devices 40, the plurality of monitoring devices 40 are in one-to-one correspondence with the plurality of evaporation sources 20, and the plurality of monitoring devices 40 are disposed at the same height position of the sidewall of the evaporation cavity 10. In this embodiment, the monitoring device 40 may also include a cage 42. The present embodiment does not limit the shape of the isolation cover 42, the isolation cover 42 is provided between the target evaporation source 20 and the crystal oscillator probe 41 at a position close to the crystal oscillator probe 41, the isolation cover 42 is configured to block vapor flow from the remaining evaporation sources 20 from reaching the crystal oscillator probe 41, wherein the target evaporation source 20 is one evaporation source 20 corresponding to the monitoring device 40, and the remaining evaporation sources 20 are evaporation sources 20 other than the target evaporation source 20 among the plurality of evaporation sources 20. By providing the isolation cover 42, the interference of the steam flow of the rest of the evaporation sources 20 is avoided, and the monitoring accuracy of the monitoring device is improved.
In the present embodiment, a shielding device 50 is provided in the evaporation chamber 10, and the shielding device 50 includes an evaporation source shutter 51 provided with an opening 511 and a transmission mechanism 52. The transmission mechanism 52 may be fixed to the bottom wall of the evaporation cavity 10, and the transmission mechanism 52 is connected to the evaporation source baffle 51. The shielding device 50 may further comprise a connection connecting the evaporation source shutter 51 and the transmission mechanism 52, i.e. the evaporation source shutter 51 is connected to the transmission mechanism 52 by a connection. The evaporation source shutter 51 may be directly connected to the transmission mechanism 52. The shape of the evaporation source shutter 51 may be, but is not limited to, circular, elliptical, or rectangular. The evaporation source shutter 51 is provided with an opening 511, and the shape of the opening 511 may be, but not limited to, a semicircle, a circle, a triangle, or a fan. The opening 511 may be provided in an edge region of the evaporation source shutter 51, and on the basis of this, the opening 511 may be provided as a notch at the edge of the evaporation source shutter 51, which may be semicircular or triangular in shape. The evaporation source shutter 51 has a closed state and an open state, and the evaporation source shutter 51 can be driven to switch between the closed state and the open state by the transmission mechanism 52. In the closed state, the evaporation source shutter 51 is located above the evaporation source 20 and the opening 511 of the evaporation source shutter 51 is close to the monitoring device 40, the evaporation source shutter 51 can block the vapor flow of the lower evaporation source 20 from reaching the wafer fixed on the carrier device 30, and the opening 511 of the evaporation source shutter 51 can allow the vapor flow of the lower evaporation source 20 to pass through and reach the monitoring device 40. In the open state, the evaporation source shutter 51 is moved away from above the evaporation source 20 to avoid the vapor flow of the evaporation source 20, so that the vapor flow of the evaporation source 20 can reach the monitoring device 40 and the carrier device 30.
It should be appreciated that the present embodiment is not limited to the specific type of transmission 52. The transmission mechanism 52 can be a rotation mechanism, a translation mechanism or other movement mechanisms, so as to ensure that the evaporation source baffle 51 can be controlled to switch between a closed state and an open state. In some embodiments, the transmission mechanism 52 is a rotation mechanism that rotates the evaporation source shutter 51 such that the evaporation source shutter 51 is switched between a closed state and an open state. The rotation mechanism can drive the evaporation source baffle 51 to rotate in a rotation opening and closing manner or a hinge opening and closing manner.
In a specific embodiment, as shown in fig. 2 to 3, the shielding device 50 includes an evaporation source baffle 51, a connector, and a rotating shaft 53, where the rotating shaft 53 drives the evaporation source baffle 51 to rotate in a first plane 6, and the first plane 6 is a plane parallel to a projection plane of the evaporation source baffle 51 on a bottom wall of the evaporation cavity 10. In this embodiment, one end of the rotation shaft 53 is fixed to the bottom wall of the vapor deposition chamber 10, the other end of the rotation shaft 53 is connected to a connector, the connector connects the evaporation source shutter 51 and the rotation shaft 53, and the evaporation source shutter 51 may be disposed perpendicular to the rotation shaft 53. The evaporation source shutter 51 is driven by the rotation shaft 53 to perform a rotation movement together with the connection member in the first plane 6. It will be appreciated that the inner surface of the bottom wall of the evaporation cavity 10 and the first plane 6 are horizontal.
In another embodiment, as shown in fig. 4 and 5, the shielding device 50 includes an evaporation source baffle 51 and a hinge assembly 54, and the hinge assembly 54 drives the evaporation source baffle 51 to rotate in a second plane 7, where the second plane 7 is a plane perpendicular to a projection plane of the evaporation source baffle 51 on a bottom wall of the evaporation cavity 10. In this embodiment, the hinge assembly 54 includes a fixed link 541 and a movable link 542, the fixed link 541 is fixed to the bottom wall of the evaporation cavity 10, the movable link 542 is connected to the evaporation source shutter 51, and the evaporation source shutter 51 is driven to flip up or down by the movable link 542. The evaporation source baffle 51 is in a closed state, the fixed connecting rod 541 forms a first included angle with the evaporation source baffle 51, the evaporation source baffle 51 is in an open state, the fixed connecting rod 541 forms a second included angle with the evaporation source baffle 51, the first included angle is smaller than 90 ° and smaller than the second included angle, and the second included angle can be equal to 180 °.
It should also be appreciated that the present embodiment also provides for the shielding device 50 to be provided with a control module, which is electrically connected to the monitoring device 40 and the shielding device 50, respectively. The control module stores preset data (including a preset evaporation rate and a preset evaporation thickness) in advance, and can acquire real-time data (including the evaporation rate and the evaporation thickness) monitored by the monitoring device 40, analyze the real-time data, determine whether the evaporation rate is stable, and determine whether the evaporation thickness reaches a preset thickness value. The control module can also issue control instructions to the shielding device 50 according to the analysis result to control the state (including the closed state and the open state) of the evaporation source shutter 51. During the preheating stage of the evaporation source 20, the control module issues a command to the shielding device 50 to control the evaporation source shutter 51 to be in a closed state. Meanwhile, the control module acquires real-time data monitored by the monitoring device 40, and when determining that the evaporation rate is stable according to the real-time data and preset data stored in advance, issues a control instruction to the shielding device 50, so that the transmission mechanism 52 drives the evaporation source baffle plate 51 to rotate to be switched into an open state, and film coating is started on the wafer. During the film plating process, the control module can also control the evaporation source baffle plate 51 to be in a closed state when determining that the film thickness reaches the preset thickness according to the real-time data and the preset data stored in advance, and stop film plating on the wafer. By opening the evaporation source baffle plate 51 when the evaporation rate is stable, the uniformity of the thin film deposited on the wafer is better, and the evaporation effect is improved.
Another alternative embodiment of the present application:
the embodiment provides a vapor deposition method applied to the vapor deposition system described in the foregoing embodiment, please refer to fig. 6, the vapor deposition method at least includes the following steps:
s101, setting a preset evaporation rate corresponding to an evaporation source 20;
s102, controlling the evaporation source baffle plate 51 to be in a closed state, and controlling the evaporation source 20 to heat materials to generate steam flow;
s103, when the evaporation rate is determined to be stable according to the evaporation rate of the evaporation source 20 and the preset evaporation rate, the evaporation source baffle 51 is controlled to be in an open state.
According to the evaporation method, due to the adoption of the evaporation system provided with the shielding device 50, the evaporation source baffle plate 51 is opened for evaporation when the evaporation rate is determined to be stable, so that the uniformity of the thin film deposited on the wafer is better, and the evaporation effect is improved.
In this embodiment, the preset evaporation rate and the preset evaporation thickness may be preset before the evaporation source 20 is started to heat, to determine when the evaporation source shutter 51 is opened and to start coating the wafer, and to determine when the evaporation source shutter 51 is closed and to stop coating the wafer. After performing S103 above, the following steps may be further included: when it is determined that the evaporation thickness of the evaporation source 20 reaches the preset evaporation thickness, the evaporation source shutter 51 is controlled to be in a closed state.
In the present embodiment, the evaporation source shutter 51 has a closed state and an open state. The evaporation source shutter 51 may be controlled to be in a closed state before the heating of the evaporation source 20 is started, when the evaporation source shutter 51 is positioned above the evaporation source 20 to block the vapor flow from reaching the wafer, and the opening 511 of the evaporation source shutter 51 allows the vapor flow to pass through to reach the monitoring device 40, and the evaporation rate of the evaporation source 20 is monitored by the monitoring device 40. When the monitored evaporation rate is stable, the evaporation source baffle 51 is controlled to be in an open state, and the evaporation source baffle 51 is removed from the upper side of the evaporation source 20 at the moment, so that the evaporation source baffle 51 does not influence the flow path of the steam flow, and the steam flow can reach the wafer and the monitoring device 40, and the wafer is coated, and the evaporation rate and the thickness are monitored. The present embodiment can determine whether the evaporation rate is stable in various ways. For example, when the monitored evaporation rate is equal to the preset evaporation rate, determining that the evaporation rate is stable; or determining that the evaporation rate is stable when the evaporation rate monitored in the preset time is equal to the preset evaporation rate; or the difference between the evaporation rate monitored in the preset time and the preset evaporation rate is always in the preset difference range, and it is determined that the evaporation rate is stable. The specific values of the preset time, the preset evaporation rate and the preset difference range can be flexibly set according to actual requirements. In this embodiment, when the evaporation rate is stable and the evaporation source baffle 51 is controlled to be in an open state, the evaporation thickness monitored before can be cleared, and the evaporation thickness can be recalculated, so as to improve the monitoring precision and the evaporation effect.
In this embodiment, the number of evaporation sources 20 in the evaporation system may be greater than or equal to 1, and if the evaporation system includes at least two evaporation sources 20, a corresponding preset evaporation rate and a preset evaporation thickness need to be set for each evaporation source 20. In this embodiment, materials in the evaporation source 20 can be flexibly set according to actual requirements, materials set by different evaporation sources 20 can be different, and materials set by different evaporation sources 20 can be the same. Meanwhile, the material of the evaporation source 20 includes an alloy material or a metal simple substance. If the film layer formed by vapor deposition is a current diffusion layer, the evaporation source 20 may be formed of any one or a combination of gold, nickel, and germanium.
In one embodiment, the evaporation system comprises two evaporation sources 20, wherein one evaporation source 20 is provided with a main body material, the other evaporation source 20 is provided with a doping material, the main body material and the doping material are different metal simple substances,wherein the main material is the metal simple substance with the highest content in the film to be evaporated. In the embodiment, when S101 is performed, the preset evaporation rate corresponding to each evaporation source 20 may be determined according to the volume ratio of the elemental metal between the host material and the doping material in the thin film to be evaporated. That is, a linear relationship between the evaporation rate of each evaporation source 20 and the volume of the elemental metal can be established, so that an alloy thin film of a target component mass ratio can be accurately formed. For example, the film to be evaporated includes a metal a and a metal B, the host material is the metal a, and the doping material is the metal B. The mass ratio of the metal A to the metal B is m a :m b The volume ratio of metal A to metal B is =a:bAnd calculating to obtain the rate ratio of metal A to metal B as +.>Wherein ρ is a For the density of A metal, ρ b For the B metal density, ra is the A metal atom radius and rb is the B metal atom radius.
In the present embodiment, when S103 is performed, the difference between the evaporation rate of each evaporation source 20 and the preset evaporation rate within the preset time is within the preset difference range, and it is determined that the evaporation rate is stable, and the evaporation source shutter 51 is controlled to be in the opened state. That is, when the evaporation rate of each evaporation source 20 is stable, the evaporation source baffle plate 51 is opened again, and the wafer is coated, so that the stability and uniformity of the alloy film are ensured. The present embodiment further includes, after executing S103, executing the steps of: when it is determined that the film thickness of the host material reaches a preset thickness, the evaporation source shutter 51 is controlled to be in a closed state. The film thickness of the main material in the alloy film is controlled, and the total thickness deviation caused by the unstable evaporation rate of each material can be reduced to the greatest extent.
Yet another alternative embodiment of the present application:
based on the foregoing embodiments, the present embodiment provides a more detailed vapor deposition system and vapor deposition method in combination with practical application scenarios.
Referring to fig. 7, the evaporation system provided in this embodiment at least includes an evaporation cavity 10, two evaporation sources 20 disposed inside the evaporation cavity 10, a carrying device 30, two monitoring devices 40, and two shielding devices 50.
The vapor deposition chamber 10 of the present embodiment includes a top wall, a bottom wall, and side walls, and an internal space defined by the top wall, the bottom wall, and the side walls. The evaporation cavity 10 is further provided with an air outlet, the air outlet is communicated with a vacuum pumping device arranged outside the evaporation cavity 10, and the internal space of the evaporation cavity 10 can be vacuumized through the vacuum pumping device, so that the vacuum degree in the evaporation cavity 10 reaches the vacuum degree required during evaporation. Can also be provided with an evaporation cavity 10 and can lead the vacuum degree in the evaporation cavity 10 to reach 10 -7 The vacuum pumping device of Torr is connected.
The two evaporation sources 20 of this embodiment are located at one side of the evaporation cavity 10 near the bottom wall, and a certain distance is kept between the two evaporation sources 20 and at the same height. The two evaporation sources 20 are provided with different materials, and are divided into a host material and a doping material according to the mass ratio of each material in the alloy thin film to be formed, and the content of the host material in the alloy thin film to be formed is highest. One of the evaporation sources 20 is provided with a main body material, the other evaporation source 20 is provided with a doping material, and the main body material and the doping material are metal simple substances. The evaporation sources 20 may be heated by an electron gun, a resistance wire, or a tungsten boat. And the evaporation rate of each evaporation source 20 can be controlled by a PID control method.
The carrying device 30 of the present embodiment is disposed in the vapor deposition chamber 10 near the top wall. The carrying means 30 comprise a support bar and a plating pot. The support rod is fixedly connected with the central position of the plating pot, is fixed at the center of the top wall of the evaporation cavity 10 and is connected with a driving piece arranged outside the evaporation cavity 10, and the support rod and the plating pot are driven to rotate together through the driving piece. The plating pot is arc-shaped and is loaded with a plurality of wafers.
The two monitoring devices 40 of the present embodiment are symmetrically arranged, and the two monitoring devices 40 are in one-to-one correspondence with the two evaporation sources 20. Each monitoring device 40 is directly fixed on the sidewall of the evaporation cavity 10 and is located between the evaporation source 20 and the carrier device 30. Each monitoring device 40 comprises a crystal oscillator probe 41 and an isolation cover 42, the crystal oscillator probe 41 can be used for monitoring the evaporation rate and the evaporation thickness of the corresponding evaporation source 20, and the isolation cover 42 can be used for blocking the vapor flow of the rest evaporation sources 20 from reaching the crystal oscillator probe 41, so that the monitoring precision is improved.
The two shielding devices 50 in this embodiment are in one-to-one correspondence with the two evaporation sources 20, the shielding devices 50 include an evaporation source baffle 51 and a transmission mechanism 52, and the transmission mechanism 52 can drive the evaporation source baffle 51 to rotate in a rotary opening and closing manner or a hinge opening and closing manner. The evaporation source shutter 51 is provided with an opening 511, and the opening 511 is a notch at the edge of the evaporation source shutter 51. The evaporation source shutter 51 has a closed state and an open state, and the evaporation source shutter 51 can be driven to switch between the closed state and the open state by the transmission mechanism 52. In the closed state, the evaporation source shutter 51 is located above the evaporation source 20 with the opening 511 of the evaporation source shutter 51 being close to the monitoring device 40, the evaporation source shutter 51 can block the vapor flow of the lower evaporation source 20 from reaching the wafer fixed on the carrier device 30, and the opening 511 of the evaporation source shutter 51 can allow the vapor flow of the lower evaporation source 20 to pass through and reach the monitoring device 40. In the open state, the evaporation source shutter 51 is moved away from above the evaporation source 20 to avoid the vapor flow of the evaporation source 20, so that the evaporation source shutter 51 does not affect the flow path of the vapor flow, and the vapor flow of the evaporation source 20 can reach the monitoring device 40 and the carrier device 30.
In addition, the evaporation system further comprises a control module electrically connected with the monitoring device 40 and the shielding device 50, wherein the control module can obtain the evaporation rate and the evaporation thickness monitored by the monitoring device 40, judge whether the evaporation rate is stable or not and judge whether the evaporation thickness reaches a preset thickness value or not, and issue a control instruction to the shielding device 50 based on the judgment result so as to control the evaporation source baffle 51 to be in a closed state or an open state.
Referring to fig. 8, the evaporation method provided in this embodiment includes the following steps:
s201, setting a preset evaporation rate of each evaporation source 20 and a preset thickness of the host material.
It should be understood that in this embodiment, the density of the host material and the doping material may be obtained according to the mass ratio between the host material and the doping material in the alloy thin film to be formed by evaporation, the volume ratio between the host material and the doping material may be calculated, the atomic radius of the host material and the doping material may be obtained, the rate ratio between the host material and the doping material may be calculated, and the preset evaporation rate corresponding to each evaporation source 20 may be determined based on the rate ratio. The predetermined thickness of the host material in the alloy film may also be set in advance.
S202, closing the evaporation source baffle 51 and starting the evaporation source 20 to heat.
It should be understood that the present embodiment fixes the wafer on the carrier 30, adds a host material to one of the evaporation sources 20, and adds a doping material to the other evaporation source 20, wherein the host material and the doping material are elemental materials of alloy components, and the purity is higher than that of the elemental materials>99.99%. The evaporation source shutter 51 is driven to be in a closed state by the transmission mechanism 52, and an external vacuum-pumping device is turned on to vacuum the evaporation cavity 10. When the vacuum pressure in the vapor deposition cavity 10 reaches 1x10 -5 Pa or less, the evaporation source 20 is started to heat. The plating pot can be controlled to rotate, and the rotating speed is set to be 5 r/min-20 r/min.
S203, when the evaporation rate is stable, the evaporation source baffle plate 51 is opened and film coating is started.
It should be understood that when the evaporation rates of the host material and the dopant material reach the corresponding preset evaporation rates, and the difference between the evaporation rates and the preset evaporation rates is within the range of the fluctuation error (less 10%), it is determined that the evaporation rates of the evaporation sources 20 are stable, the evaporation source baffle plate 51 is controlled to be in an opened state, and the wafer is coated. The film thickness of the host material is also monitored simultaneously.
S204, closing the evaporation source baffle plate 51 to finish film coating.
It should be understood that when the film thickness of the host material reaches a preset thickness, each evaporation source shutter 51 is simultaneously controlled to be in a closed state to end the film plating of the wafer. And opening the evaporation cavity 10 after cooling down and taking out the wafer.
It should also be understood that the evaporation system and the evaporation method provided in this embodiment are suitable for forming a current diffusion layer, an alloy film is formed in a doping manner by evaporating a plurality of evaporation sources 20 at the same time and is used as the current diffusion layer, no fractionation risk exists in the evaporation process, and a current diffusion layer with stable and uniform component proportion can be obtained, and stable ohmic contact can be formed by annealing subsequently, so that the chip performance is improved.
According to the evaporation system and the evaporation method, the alloy film is formed in a doping mode through simultaneous evaporation of a plurality of evaporation sources, and the alloy film with stable and uniform component proportion can be formed; the evaporation source baffle with the opening is arranged, and the evaporation source baffle is opened when the evaporation rate is determined to be stable, so that the wafer is coated, and the risk of abnormal coating caused by unstable evaporation rate of the evaporation source in the preheating stage is eliminated; according to the rate ratio between the main material and the doping material in the alloy film to be evaporated, determining each preset evaporation rate, and accurately forming the alloy film with the mass ratio of the target components; and the film thickness of the main material in the alloy film is controlled, so that the total thickness deviation caused by the unstable evaporation rate of each material can be reduced to the greatest extent.
It is to be understood that the application of the present application is not limited to the examples described above, but that modifications and variations can be made by a person skilled in the art from the above description, all of which modifications and variations are intended to fall within the scope of the claims appended hereto.
Claims (10)
1. An evaporation system, comprising:
a vapor deposition cavity;
an evaporation source disposed on one side within the evaporation cavity, the evaporation source configured to heat a material to generate a vapor flow;
a carrying device disposed on a side of the evaporation cavity opposite to the evaporation source and on a flow path of the vapor flow, the carrying device being configured to carry a wafer;
a monitoring device disposed within the evaporation cavity and on a flow path of the vapor flow, the monitoring device configured to monitor an evaporation rate of the evaporation source; and
the shielding device is arranged in the evaporation cavity and comprises an evaporation source baffle plate with an opening and a transmission mechanism;
the evaporation source shutter has a closed state in which the evaporation source shutter is close to the evaporation source to block the vapor flow from reaching the wafer carried by the carrying device, and an open state in which the evaporation source shutter is away from the evaporation source so that the vapor flow reaches the wafer and the monitoring device, and the opening of the evaporation source shutter allows the vapor flow to pass therethrough to reach the monitoring device;
the transmission mechanism is connected with the evaporation source baffle, and is configured to control the evaporation source baffle to be switched from the closed state to the open state when the evaporation rate is determined to be stable.
2. The vapor deposition system of claim 1, comprising: the evaporation sources and the monitoring devices are in one-to-one correspondence, and the monitoring devices are arranged at the same height position of the side wall of the evaporation cavity.
3. The vapor deposition system of claim 2, comprising: the monitoring device comprises a crystal oscillator probe and an isolation cover, wherein the isolation cover is arranged between a target evaporation source and the crystal oscillator probe and is close to the position of the crystal oscillator probe, the isolation cover is configured to block vapor flow from other evaporation sources from reaching the crystal oscillator probe, the target evaporation source is the evaporation source corresponding to the monitoring device, and the other evaporation sources are evaporation sources except the target evaporation source among a plurality of evaporation sources.
4. The evaporation system of any one of claims 1-3, wherein said transmission mechanism is a rotation mechanism that rotates said evaporation source shutter such that said evaporation source shutter is switched between said closed state and said open state.
5. The evaporation system of claim 4, wherein said rotation mechanism comprises a rotation shaft that rotates said evaporation source baffle in a first plane that is parallel to a projection plane of said evaporation source baffle on a bottom wall of said evaporation chamber.
6. The evaporation system of claim 4, wherein the rotation mechanism comprises a hinge assembly that rotates the evaporation source baffle in a second plane that is perpendicular to a projection plane of the evaporation source baffle on a bottom wall of the evaporation chamber.
7. The evaporation system of any of claims 1-3, wherein said opening is a notch at an edge of said evaporation source baffle.
8. A vapor deposition method, characterized in that the vapor deposition method is applied to the vapor deposition system according to any one of claims 1 to 7, comprising:
setting a preset evaporation rate corresponding to the evaporation source;
controlling the evaporation source shutter to be in the closed state, and controlling the evaporation source to heat a material to generate the vapor stream;
and when the evaporation rate is determined to be stable according to the evaporation rate of the evaporation source and the preset evaporation rate, controlling the evaporation source baffle to be in the opening state.
9. The vapor deposition method according to claim 8, wherein the vapor deposition system includes two of the evaporation sources, one of the evaporation sources being provided with a host material and the other evaporation source being provided with a doping material, the host material being a different metal element than the doping material;
the setting the preset evaporation rate corresponding to the evaporation source includes:
determining the preset evaporation rate corresponding to each evaporation source according to the volume ratio of simple substance metal between the main material and the doping material in the film to be evaporated;
and when the evaporation rate is determined to be stable according to the evaporation rate of the evaporation source and the preset evaporation rate, controlling the evaporation source baffle to be in the open state comprises:
and in the preset time, the difference value between the evaporation rate of each evaporation source and the preset evaporation rate is in a preset difference value range, and the evaporation rate is determined to be stable, and the evaporation source baffle is controlled to be in the open state.
10. The vapor deposition method according to claim 9, wherein after controlling the evaporation source shutter to be in the open state when the evaporation rate is determined to be stable based on the evaporation rate of the evaporation source and the preset evaporation rate, further comprising:
and when the film thickness of the main body material reaches a preset thickness, controlling the evaporation source baffle to be in the closed state.
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| CN202211104905.4A CN117721418A (en) | 2022-09-09 | 2022-09-09 | Evaporation system and evaporation method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211104905.4A CN117721418A (en) | 2022-09-09 | 2022-09-09 | Evaporation system and evaporation method |
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