CN117712093A - Power device, power device packaging module and method and motor driving system - Google Patents
Power device, power device packaging module and method and motor driving system Download PDFInfo
- Publication number
- CN117712093A CN117712093A CN202311632907.5A CN202311632907A CN117712093A CN 117712093 A CN117712093 A CN 117712093A CN 202311632907 A CN202311632907 A CN 202311632907A CN 117712093 A CN117712093 A CN 117712093A
- Authority
- CN
- China
- Prior art keywords
- power device
- substrate
- gate electrodes
- flexible film
- package module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 230000017525 heat dissipation Effects 0.000 claims abstract description 18
- 239000012528 membrane Substances 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 11
- 239000004642 Polyimide Substances 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000001465 metallisation Methods 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 238000007306 functionalization reaction Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000009827 uniform distribution Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 206010063385 Intellectualisation Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5387—Flexible insulating substrates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present application relates to the field of semiconductor technology, and more particularly, to a power device, a power device packaging module, a power device packaging method, and a motor driving system including the power device packaging module. A power device package module according to one aspect of the present application includes: a substrate comprising a first side and a second side opposite the first side; a flexible membrane located on a first side of the substrate and having a plurality of through holes; one or more power devices, each power device being located on a surface of the flexible film facing away from the first side of the substrate and including a front surface of the flexible film on which a plurality of gate electrodes are disposed and a back surface opposite to the front surface, the plurality of gate electrodes being dispersedly arranged in the power devices such that delay times for each of the plurality of gate electrodes to receive a control signal are equal; and a heat dissipation member located at least on the second side of the substrate and configured to dissipate heat generated by the one or more power devices.
Description
Technical Field
The present application relates generally to the field of semiconductor technology, and more particularly to a power device packaging module and a power device packaging method.
Background
The third generation semiconductor materials silicon carbide (SiC) and gallium nitride (GaN) have the advantages of large forbidden band width, high electron mobility, high breakdown field intensity, good heat conduction performance and the like, and have very strong spontaneous and piezoelectric polarization effects, so that compared with the traditional silicon-based materials, the silicon-based material is more suitable for manufacturing high-frequency, high-voltage and high-temperature-resistant power devices with high power density, and has obvious advantages especially in the field of high-efficiency electric energy conversion.
However, the current packaging technology and material design of power devices are still based on the technology of conventional silicon-based power devices, which cannot be adapted to the development direction of high integration, multi-functionalization and high power of the power devices, and the performance of the power devices based on the third generation semiconductor materials silicon carbide (SiC) and gallium nitride (GaN) is limited in internal connection, heat dissipation and protection, etc., so that the material advantages thereof cannot be fully exerted.
Disclosure of Invention
To solve or at least alleviate one or more of the above problems, the following solutions are provided.
According to a first aspect of the present application, there is provided a power device package module comprising: a substrate comprising a first side and a second side opposite the first side; a flexible membrane located on a first side of the substrate and having a plurality of through holes; one or more power devices, each power device being located on a surface of the flexible film facing away from the first side of the substrate and including a front surface facing the flexible film, on which a plurality of gate electrodes are provided, and a rear surface opposite to the front surface, the plurality of gate electrodes being dispersedly arranged on the power devices such that delay times for each of the plurality of gate electrodes to receive a control signal are equal; and a heat dissipation member located at least on the second side of the substrate and configured to dissipate heat generated by the one or more power devices.
The power device package module according to an embodiment of the present application, wherein the flexible film is implemented as a polyimide material.
The power device package module according to an embodiment of the present application or any one of the above embodiments, wherein a front surface of the power device is further provided with a source electrode, and a back surface of the power device is provided with a drain electrode.
The power device package module according to an embodiment of the application or any of the embodiments above, wherein the source electrode is connected to the first side of the substrate via the plurality of through holes of the flexible film, and the plurality of gate electrodes are connected to a surface of the flexible film facing away from the first side of the substrate.
The power device package module according to an embodiment of the application or any of the embodiments above, wherein a surface of the flexible film facing away from the first side of the substrate is deposited with a metal material at a location in contact with the source electrode and the plurality of gate electrodes and at a location in contact with the source electrode facing the surface of the first side of the substrate.
The power device package module according to an embodiment of the present application or any one of the above embodiments, wherein the power device package module further includes: and a metal layer disposed on the back surface of each power device and extending to the first side of the substrate for fixing each power device to the first side of the substrate and conducting heat generated by each power device.
According to an embodiment of the present application or any one of the above embodiments, the heat dissipation member is further located on a side of the metal layer away from the power device, and an insulating material is disposed between the side of the metal layer away from the power device and the heat dissipation member.
The power device package module according to an embodiment of the present application or any one of the above embodiments, wherein the power device package module further includes: a temperature sensor integrated within the power device or disposed on a first side of the substrate proximate to the power device, the temperature sensor configured to measure a temperature of the power device and generate a signal indicative of the measured temperature.
The power device package module according to an embodiment of the present application or any one of the above embodiments, wherein the power device package module further includes: a current sensor integrated within the power device, the current sensor configured to measure a current flowing through the power device and to generate a signal indicative of the measured current.
The power device package module according to an embodiment of the application or any of the embodiments above, wherein the plurality of gate electrodes are configured to be arranged discretely to the power device based on a geometry of the power device such that the control signal is capable of controlling a maximum distance of each gate electrode of the plurality of gate electrodes with respect to the power device transmission.
The power device package module according to an embodiment of the present application or any one of the above embodiments, wherein the power device package module further includes: a drive protection member connected to a surface of the flexible film facing away from the first side of the substrate and for driving and protecting the one or more power devices.
The power device package module according to an embodiment of the present application or any of the above embodiments, wherein the drive protection component includes one or more of: passive components, gate drivers, logic protection circuits.
According to a second aspect of the present application, there is provided a motor drive system comprising a power device package module according to the first aspect of the present application.
According to a third aspect of the present application, there is provided a power device comprising: and a plurality of gate electrodes dispersedly arranged on the power device such that delay times for each of the plurality of gate electrodes to receive a control signal are equal.
The power device according to an embodiment of the present application, wherein the power device further comprises a source electrode and a drain electrode, the source electrode and the plurality of gate electrodes being arranged on one side of the power device and the drain electrode being arranged on the other side of the power device.
The power device according to an embodiment of the present application or any of the above embodiments, wherein the plurality of gate electrodes are configured to be arranged discretely in the power device based on a geometry of the power device such that minimizing the control signal is capable of controlling a maximum distance of each gate electrode of the plurality of gate electrodes transmitted relative to the power device.
According to a fourth aspect of the present application, there is provided a power device packaging method, including: providing a substrate comprising a first side and a second side opposite the first side; providing a flexible membrane having a plurality of through holes on a first side of the substrate; providing one or more power devices on a surface of the flexible film facing away from the first side of the substrate, each power device including a front surface facing the flexible film on which a plurality of gate electrodes are provided and a back surface opposite the front surface, the plurality of gate electrodes being arranged in a dispersed manner in the power devices such that delay times for each of the plurality of gate electrodes to receive a control signal are equal; and providing a heat sink member at least on the second side of the substrate for dissipating heat generated by the one or more power devices.
The power device packaging scheme according to one or more embodiments of the present application can provide an improved packaging structure adapted to high integration, multi-functionalization and high power of a power device, such as optimizing internal connection of a packaging module by a plurality of through holes of a flexible film instead of a conventional wire bonding manner while achieving front side heat dissipation of the power device to improve heat dissipation efficiency, achieving uniform distribution of current in the power device by dispersedly arranging a plurality of gate electrodes and reducing switching delay of the power device. Furthermore, power device packaging schemes according to one or more embodiments of the present application enable third generation semiconductor materials silicon carbide (SiC) and gallium nitride (GaN) to fully exploit their material advantages when applied to power devices.
Drawings
The foregoing and/or other aspects and advantages of the present application will become more apparent and more readily appreciated from the following description of the various aspects taken in conjunction with the accompanying drawings in which like or similar elements are designated with the same reference numerals. In the drawings:
fig. 1a and 1b are schematic structural views illustrating a conventional vertical power device.
Fig. 1c shows a schematic diagram of a vertical power device in accordance with one or more embodiments of the present application.
Fig. 2 illustrates a power device package connection schematic in accordance with one or more embodiments of the present application.
Fig. 3 shows a schematic cross-sectional structure of the power device package connection provided in fig. 2.
Fig. 4 illustrates a schematic structure of a power device package module in accordance with one or more embodiments of the present application.
Fig. 5 illustrates a schematic structure of a power device package module in accordance with one or more embodiments of the present application.
Fig. 6 illustrates a flow diagram of a power device packaging method in accordance with one or more embodiments of the present application.
Detailed Description
Example embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings. It should be noted that the following description is for purposes of explanation and illustration, and thus should not be construed as limiting the present application. Those skilled in the art may make electrical, mechanical, logical and structural changes in these embodiments as may be made in the practice without departing from the principles of the present application without departing from the scope thereof. Furthermore, one skilled in the art will appreciate that one or more features of the different embodiments described below may be combined for any particular application scenario or actual need.
Terms such as "comprising" and "including" mean that in addition to having elements and steps that are directly and explicitly recited in the description, the technical solutions of the present application do not exclude the presence of other elements and steps not directly or explicitly recited. The terms such as "first" and "second" do not denote the order of units in terms of time, space, size, etc. but rather are merely used to distinguish one unit from another.
In the context of the present application, the term "vertical power device" refers to a power device in which the electrodes are located on different sides of the power device, wherein the side provided with the gate electrode and the source electrode may be referred to as the front side of the power device and the side provided with the drain electrode may be referred to as the back side of the power device. It will be appreciated that in a vertical power device, current flows vertically from the drain electrode to the source electrode. By way of example, the vertical-type power device may include a high electron mobility transistor (High Electron Mobility Transist, HEMT), a schottky barrier diode (SchottkyBarrierDiode, SBD), an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT), a Metal-Oxide-Semiconductor Field-Effect Transistor, a MOSFET, a Junction Field-Effect Transistor, a JFET, a bipolar Junction transistor (Bipolar Junction Transistor, BJT), and the like.
Fig. 1a and 1b are schematic structural views illustrating a conventional vertical power device.
As shown in fig. 1a, the vertical type power device 100a includes a gate electrode G disposed at a middle position of an edge of the vertical type power device 100a, la schematically showing a maximum distance that a control signal for controlling the gate electrode G needs to be transmitted with respect to the vertical type power device 100 a. Schematically, the distance La may also be understood as the length of the delay time for the control signal to control (e.g., turn on) the gate electrode G.
As shown in fig. 1b, the vertical-type power device 100b includes a gate electrode G disposed at a central position of the vertical-type power device 100b, and Lb schematically illustrates a maximum distance that a control signal for controlling the gate electrode G needs to be transmitted with respect to the vertical-type power device 100b. Schematically, the distance Lb may also be understood as the length of the delay time for the control signal to control (e.g. turn on) the gate electrode G. Although the distance Lb shown in fig. 1b is shorter than the distance La shown in fig. 1a, the implementation of the conventional wire bonding connection scheme is limited because the gate electrode G in fig. 1b is disposed at the center of the vertical power device 100b.
Fig. 1c shows a schematic diagram of a vertical power device in accordance with one or more embodiments of the present application.
As shown in fig. 1c, the vertical-type power device 100c includes a plurality of gate electrodes G that are dispersedly arranged in the vertical-type power device 100c such that delay times in which each of the plurality of gate electrodes G receives a control signal are equal, so that each of the plurality of gate electrodes G can be controlled (e.g., turned on) substantially simultaneously, thereby achieving uniform distribution of current inside the vertical-type power device 100c. Alternatively, the vertical-type power device 100c may further include source and drain electrodes (not shown in fig. 1 c), and the source and the plurality of gate electrodes G may be disposed at one side of the vertical-type power device 100c and the drain electrode may be disposed at the other side of the vertical-type power device 100c. Alternatively, the plurality of gate electrodes G may be configured to be dispersedly arranged at the vertical-type power device 100c based on the geometry of the vertical-type power device 100c such that the minimum control signal can control the maximum distance that each of the plurality of gate electrodes G transmits with respect to the vertical-type power device 100c, thereby minimizing the control delay of each of the plurality of gate electrodes G.
As an example, two gate electrodes G are shown in fig. 1c, which are respectively arranged at two opposite corners of the vertical-type power device 100c, lc schematically showing the maximum distance that a control signal for controlling the gate electrode G needs to be transmitted with respect to the vertical-type power device 100c. Schematically, the distance Lc may also be understood as the length of the delay time for the control signal to control (e.g. turn on) the gate electrode G. The distance Lc in fig. 1c is significantly shortened compared to the distance La in fig. 1a and the distance Lb in fig. 1b, thereby significantly reducing the control delay of the control signal to the gate electrode G. In addition, it should be noted that the number of gate electrodes G may be flexibly selected according to the size of the vertical-type power device 100c and the size of the active region. For example, four gate electrodes G may be provided, which may be disposed at four opposite corners of the vertical type power device 100c, respectively.
Alternatively, the vertical-type power device 100c may be further integrated with a temperature sensor TS and a current sensor CS, the temperature sensor TS may be configured to measure a temperature of the vertical-type power device 100c and generate a signal indicating the measured temperature, and the current sensor CS may be configured to measure a current flowing through the vertical-type power device 100c and generate a signal indicating the measured current. For example, the signals generated by the temperature sensor TS and the current sensor CS indicating the measured temperature and the signals indicating the measured current may be transmitted to an external logic circuit for processing so that the external logic circuit may rapidly (e.g., about 3 to 5 microseconds) turn off the voltage of the gate electrode G to turn off the vertical-type power device 100c when the measured temperature is outside the threshold temperature range or the measured current is outside the threshold current range. Alternatively, the vertical type power device 100c may be further integrated with a driving resistor R, and a control signal for controlling the gate electrode G may be transmitted to the gate electrode G via the driving resistor R. By integrating one or more of the temperature sensor TS, the current sensor CS, and the gate electrode G inside the vertical-type power device 100c, the degree of intellectualization and the degree of integration of the vertical-type power device 100c can be improved.
Fig. 2 illustrates a power device package connection schematic in accordance with one or more embodiments of the present application.
As shown in fig. 2, power device package connection 200 illustrates the connection of flexible membrane 210 to power device 220. It should be noted that the power device package connection 200 shown in fig. 2 may be applied not only to the vertical type power device 100c shown in fig. 1c, but also to the vertical type power device 100a shown in fig. 1a and the vertical type power device 100b shown in fig. 1 b. The power device 220 will be described below as being implemented as a vertical power device 100c shown in fig. 1c as an example.
Alternatively, the flexible film 210 may be implemented using a polyimide insulating material to be formed as a polyimide flexible film.
As shown in fig. 2, the flexible film 210 may have a plurality of through holes 2101, and the plurality of through holes 2101 may be formed, for example, by laser perforation techniques. To make electrical connection with the power device 220, a metal material may be deposited on the upper and lower surfaces of the flexible film 210 through an electroplating process, then a portion of the deposited metal may be etched away according to design requirements (e.g., structural requirements, conductive requirements, insulation requirements, connection requirements, etc.) of the power device 220, and then the flexible film 210 may be connected to the front side (i.e., the side including the source electrode and the plurality of gate electrodes) of the power device 220 through the remaining deposited metal by a soldering process or the like. In one embodiment, copper may be deposited on the upper and lower surfaces of the flexible film 210 through an electroplating process to a thickness of about 100 μm, and the deposited copper may be etched such that copper is deposited on the upper and lower surfaces of the flexible film 210 at positions contacting the source electrode and the plurality of gate electrodes of the power device 220, and finally the source electrode of the power device 220 may be connected to a side of the flexible film 210 remote from the power device 220 via the plurality of through holes 2101, and the plurality of gate electrodes G of the power device 220 may be directly connected to a side of the flexible film 210 close to the power device 220.
By forming the flexible film 210 using polyimide insulating material, parasitic inductance and power device packaging costs can be reduced, allowing for widespread use in integrated circuit packaging. The electrical connection of the flexible film 210 and the power device 220 is optimized by the plurality of through holes 2101 instead of the conventional wire bonding manner, so that the electrode of the power device 220 can be arranged in the middle area of the power device 220 without being arranged only at the edge and the corner, thereby reducing the RC delay of the power device 220 and improving the reliability of the power device 220 compared with the conventional wire bonding manner.
Optionally, the power device package connection 200 may further include metal traces 230 for electrically connecting with the driving circuit and external logic circuit, etc., to receive control signals and send measurement signals generated by the temperature sensor TS and the current sensor CS to the external logic circuit for processing.
Fig. 3 shows a schematic cross-sectional structure of the power device package connection provided in fig. 2.
As shown in fig. 3, the power device package connection 300 includes a flexible film 310, a power device 320 (shown in phantom), and metal deposits 330 on the upper and lower surfaces of the flexible film 310. The power device package connection 300 shown in fig. 3 may be used for packaging one or more power devices, and fig. 3 schematically illustrates a package connection of two power devices 320, which is described in detail below with reference to the left side of the power device 320.
In fig. 3, the flexible film 310 may be formed with a plurality of through holes, for example, by a laser perforation technique, the source electrode S of the power device 320 may be connected to a side of the flexible film 310 remote from the power device 320 via the plurality of through holes, the gate electrode G of the power device 320 may be directly connected to a side of the flexible film 310 close to the power device 320, and the drain electrode D of the power device 320 is located at a side of the power device 320 remote from the flexible film 310. As described above with reference to fig. 2, the upper and lower surfaces of the flexible film 310 may have metal deposition 330 at positions contacting the gate electrode G and the source electrode S of the power device 320. The metal deposition 330 may be formed by: first, metal materials are deposited on the upper and lower surfaces of the flexible film 310 through an electroplating process, and then, a part of the deposited metal may be etched away according to design requirements (e.g., structural requirements, conductive requirements, insulation requirements, connection requirements, etc.) of the power device 320, and the remaining deposited metal is the metal deposition 330. Illustratively, the flexible film 310 may be connected to the front side of the power device 320 (i.e., the side including the source electrode S and the plurality of gate electrodes G) by metal deposition 330 using a soldering or the like process. It should be noted that the lower surface of the flexible film 310 may also have a metal deposit 330 for connection with other components.
Optionally, the power device package connection 300 may further include an adhesive 340 and a driving protection part 350 disposed on the upper and lower surfaces of the flexible film 310. The adhesive 340 may be used to fix the power device 320, the driving protection member 350, and the flexible film 310, and to fix the flexible film 310 and other components. Alternatively, the driving protection part 350 may include passive components (e.g., capacitors, resistors, inductors, various sensors, etc.), gate drivers, logic protection circuits, etc.
Fig. 4 illustrates a schematic structure of a power device package module in accordance with one or more embodiments of the present application.
As shown in fig. 4, the power device package module 400 includes a substrate 410, a flexible film 420, a power device 430, and a heat sink 440. The power device package module 400 shown in fig. 4 may be used for packaging one or more power devices, and fig. 4 schematically illustrates packaging of two power devices 430, and is described in detail below with reference to the right side of the power device 430.
The substrate 410 may include a first layer 4101, a second layer 4102, and a third layer 4103, wherein the first layer 4101 and the third layer 4103 may be implemented as a metallic material (e.g., copper) and the second layer 4102 may be implemented as an insulating material (e.g., a ceramic material such as aluminum nitride, aluminum oxide, etc.). Alternatively, the substrate 410 may omit the third layer 4103 and include the first layer 4101 and the second layer 4102. Alternatively, the substrate 410 may be implemented by a multi-layer PCB process (e.g., DBC process, IMS process).
As described above, the flexible film 420 may have a plurality of through holes. Alternatively, the flexible film 420 may be implemented using a polyimide insulating material to form a polyimide flexible film.
The power device 430 is located at a surface of the flexible film 420 facing away from the first layer 4101 of the substrate 410 and includes a front surface provided with a plurality of gate electrodes G and source electrodes S and a rear surface provided with drain electrodes S facing the flexible film 420, the plurality of gate electrodes G being dispersedly arranged at the power device 430 such that delay times for each of the plurality of gate electrodes G to receive a control signal are equal. Alternatively, the plurality of gate electrodes G may be configured to be dispersedly arranged at the power device 430 based on the geometry of the power device 430 such that the minimum control signal can control the maximum distance that each of the plurality of gate electrodes G transmits with respect to the power device 430. The specific implementation of the plurality of gate electrodes G of the power device 430 may be referred to the description above in connection with fig. 1 c.
In fig. 4, flexible membrane 420 and power device 430 may be connected by means of the connection described above with reference to fig. 2 and 3. For example, the flexible film 420 may be formed with a plurality of through holes, for example, by a laser perforation technique, the source electrode S of the power device 430 may be connected to the first layer 4101 of the substrate 410 via the plurality of through holes, and the gate electrode G of the power device 430 may be directly connected to a side of the flexible film 420 close to the power device 430. As described above with reference to fig. 3, the upper and lower surfaces of flexible film 420 may have metal deposition. The metal deposition may be formed by: first, metal materials are deposited on the upper and lower surfaces of the flexible film 420 through an electroplating process, and then, part of the deposited metal can be etched away according to design requirements (e.g., structural requirements, conductive requirements, insulation requirements, connection requirements, etc.) of the power device 430, and the remaining deposited metal is metal deposition. By way of example, flexible film 420 may be attached to the front side of power device 430 by metal deposition using a soldering or the like process. Further, the flexible film 420 may be connected to the first layer 4101 of the substrate 410 by soldering or sintering using metal deposition of the lower surface thereof.
By forming the flexible film 420 using polyimide insulating material, parasitic inductance and power device packaging costs may be reduced, allowing for widespread use in integrated circuit packaging. The electrical connection between the flexible film 420 and the power device 430 is optimized by the plurality of through holes of the flexible film 420 and the metal deposition on the upper and lower surfaces thereof instead of the conventional wire bonding manner, so that the electrode of the power device 430 can be disposed in the middle area of the power device 430 without being disposed only at the edges and corners, thereby reducing the RC delay of the power device 430 and improving the reliability of the power device 430 compared with the conventional wire bonding manner.
The heat dissipation member 440 may be coupled to at least the third layer 4103 of the substrate 410 and configured to dissipate heat generated by the power device 430. Alternatively, the heat dissipation member 440 may also be directly connected to the second layer 4102 of the substrate 410 and used to dissipate heat generated by the power device 430.
The metal layer 450 may be disposed on the back surface of the power device 430 and extend to the first layer 4101 of the substrate 410 for fixing the power device 430 to the first layer 4101 of the substrate 410 and conducting heat generated by the power device 430. Alternatively, the metal layer 450 may be implemented as a copper bridge structure.
Optionally, the power device package module 400 may further include a lead frame 460, which may be implemented as a metallic material (e.g., copper), for making electrical connection of the power device 430 to external circuitry.
Optionally, the power device package module 400 may further include a temperature sensor (not shown in fig. 4) that may be disposed at a location of the first layer 4101 of the substrate 410 proximate to the power device 430, which may be configured to measure a temperature of the power device 430 and generate a signal indicative of the measured temperature. By the power device package module 400 according to one or more embodiments of the present application, it is possible to dispose a temperature sensor at a position close to the source electrode and the drain electrode of the power device 430, improving accuracy of temperature sensing.
Alternatively, the power device package module 400 may be molded by integral plastic encapsulation or other encapsulation mode (e.g., by a potting compound material), as shown at 470 in fig. 4. It should be noted that, the power device package module 400 is implemented as a single-sided heat dissipation, i.e., includes one heat dissipation member 440. Optionally, the power device package module 400 may also expose the metal layer 450 without molding to achieve dual-sided heat dissipation, as described in connection with fig. 5 below.
Fig. 5 illustrates a schematic structure of a power device package module in accordance with one or more embodiments of the present application.
As shown in fig. 5, the power device package module 500 includes a substrate 510, a flexible film 520, a power device 530, a heat sink 540, a first metal layer 550, and a leadframe 560.
The substrate 510 may include a first layer 5101, a second layer 5102, and a third layer 5103, wherein the first layer 5101 and the third layer 5103 may be implemented as a metallic material (e.g., copper) and the second layer 5102 may be implemented as an insulating material (e.g., a ceramic material such as aluminum nitride, aluminum oxide, etc.). Alternatively, the substrate 510 may omit the third layer 5103 and include the first layer 5101 and the second layer 5102.
Alternatively, the arrangement and implementation of the power device package module 500 may be similar to the power device package module 400 described in fig. 4, with respect to differences from the power device package module 400 described in fig. 4.
In fig. 5, the power device package module 500 may be implemented as a double-sided heat sink, i.e., includes two heat sink members 540 to improve heat dissipation efficiency. As shown in fig. 5, the power device package module 500 may further include a second metal layer 570 and an insulating layer 580, wherein the second metal layer 570 is disposed on a side of the first metal layer 550 away from the power device 530, and the insulating layer 580 is disposed on a side of the second metal layer 570 away from the first metal layer 550. One heat sink member 540 may be disposed at a side of the insulating layer 580 remote from the second metal layer 570, and the other heat sink member 540 may be connected to the third layer 5103 of the substrate 510.
The power device packaging module according to one or more embodiments of the present application can provide an improved packaging structure adapted to high integration, multi-functionalization and high power of a power device, such as optimizing internal connection of the packaging module by a plurality of through holes of a flexible film instead of a conventional wire bonding manner while achieving front side heat dissipation of the power device to improve heat dissipation efficiency, achieving uniform distribution of current in the power device by dispersedly arranging a plurality of gate electrodes and reducing switching delay of the power device. Furthermore, power device packaging schemes according to one or more embodiments of the present application enable third generation semiconductor materials silicon carbide (SiC) and gallium nitride (GaN) to fully exploit their material advantages when applied to power devices. Furthermore, a power device package module according to one or more embodiments of the present application can integrate a driving protection part and can incorporate a multi-layer PCB process, thereby achieving high integration and applicability of the power device package module.
Fig. 6 illustrates a flow diagram of a power device packaging method in accordance with one or more embodiments of the present application.
As shown in fig. 6, in step S610, a substrate is provided, the substrate including a first side and a second side opposite the first side.
In step S620, a flexible film having a plurality of through holes is disposed on a first side of a substrate.
In step S630, one or more power devices are disposed on a surface of the flexible film facing away from the first side of the substrate, each power device including a front surface facing the flexible film on which a plurality of gate electrodes are disposed and a rear surface opposite to the front surface, the plurality of gate electrodes being dispersedly disposed on the power devices such that delay times for each of the plurality of gate electrodes to receive a control signal are equal.
In step S640, a heat sink is disposed at least on the second side of the substrate for dissipating heat generated by the one or more power devices.
The embodiments and examples set forth herein are presented to best explain the embodiments in accordance with the application and its particular application and to thereby enable those skilled in the art to make and use the application. However, those skilled in the art will recognize that the foregoing description and examples have been presented for the purpose of illustration and example only. The description as set forth is not intended to cover various aspects of the application or to limit the application to the precise form disclosed.
Claims (10)
1. A power device package module, the power device package module comprising:
a substrate comprising a first side and a second side opposite the first side;
a flexible membrane located on a first side of the substrate and having a plurality of through holes;
one or more power devices, each power device being located on a surface of the flexible film facing away from the first side of the substrate and including a front surface facing the flexible film, on which a plurality of gate electrodes are provided, and a rear surface opposite to the front surface, the plurality of gate electrodes being dispersedly arranged on the power devices such that delay times for each of the plurality of gate electrodes to receive a control signal are equal; and
and a heat dissipation member located at least on the second side of the substrate and configured to dissipate heat generated by the one or more power devices.
2. The power device package module of claim 1 wherein the flexible film is implemented as a polyimide material,
wherein the front side of the power device is also provided with a source electrode, and the back side of the power device is provided with a drain electrode,
wherein the source electrode is connected to a first side of the substrate via the plurality of through holes of the flexible film, the plurality of gate electrodes are connected to a surface of the flexible film facing away from the first side of the substrate,
wherein a surface of the flexible film facing away from the first side of the substrate is deposited with a metallic material at a location in contact with the source electrode and the plurality of gate electrodes and at a location in contact with the source electrode facing the surface of the first side of the substrate.
3. The power device package module of claim 1, wherein the power device package module further comprises:
a metal layer disposed on the back side of each of the power devices and extending to the first side of the substrate for securing each of the power devices to the first side of the substrate and conducting heat generated by each of the power devices,
the heat dissipation part is further positioned on one side of the metal layer far away from the power device, and an insulating material is arranged between one side of the metal layer far away from the power device and the heat dissipation part.
4. The power device package module of claim 1, wherein the power device package module further comprises:
a temperature sensor integrated within the power device or disposed on a first side of the substrate proximate to the power device, the temperature sensor configured to measure a temperature of the power device and generate a signal indicative of the measured temperature.
5. The power device package module of claim 1, wherein the power device package module further comprises:
a current sensor integrated within the power device, the current sensor configured to measure a current flowing through the power device and to generate a signal indicative of the measured current.
6. The power device package module of claim 1 wherein the plurality of gate electrodes are configured to be discretely arranged at the power device based on a geometry of the power device such that minimizing the control signal enables control of a maximum distance that each of the plurality of gate electrodes transmits relative to the power device,
wherein the power device package module further comprises:
a drive protection member connected to a surface of the flexible film facing away from the first side of the substrate and for driving and protecting the one or more power devices,
wherein the drive protection component comprises one or more of: passive components, gate drivers, logic protection circuits.
7. A motor drive system, characterized in that it comprises a power device package module according to any one of claims 1 to 6.
8. A power device, the power device comprising:
and a plurality of gate electrodes dispersedly arranged on the power device such that delay times for each of the plurality of gate electrodes to receive a control signal are equal.
9. The power device of claim 8, wherein the power device further comprises a source electrode and a drain electrode, the source electrode and the plurality of gate electrodes being disposed on one side of the power device and the drain electrode being disposed on another side of the power device,
wherein the plurality of gate electrodes are configured to be discretely arranged at the power device based on a geometry of the power device such that a maximum distance that the control signal can control each gate electrode of the plurality of gate electrodes to be transferred relative to the power device is minimized.
10. A power device packaging method, the power device packaging method comprising:
providing a substrate comprising a first side and a second side opposite the first side;
providing a flexible membrane having a plurality of through holes on a first side of the substrate;
providing one or more power devices on a surface of the flexible film facing away from the first side of the substrate, each power device including a front surface facing the flexible film on which a plurality of gate electrodes are provided and a back surface opposite the front surface, the plurality of gate electrodes being arranged in a dispersed manner in the power devices such that delay times for each of the plurality of gate electrodes to receive a control signal are equal; and
a heat sink member is disposed at least on the second side of the substrate for dissipating heat generated by the one or more power devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311632907.5A CN117712093A (en) | 2023-11-28 | 2023-11-28 | Power device, power device packaging module and method and motor driving system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311632907.5A CN117712093A (en) | 2023-11-28 | 2023-11-28 | Power device, power device packaging module and method and motor driving system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117712093A true CN117712093A (en) | 2024-03-15 |
Family
ID=90143422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311632907.5A Pending CN117712093A (en) | 2023-11-28 | 2023-11-28 | Power device, power device packaging module and method and motor driving system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117712093A (en) |
-
2023
- 2023-11-28 CN CN202311632907.5A patent/CN117712093A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11037847B2 (en) | Method of manufacturing semiconductor module and semiconductor module | |
| JP6354845B2 (en) | Semiconductor module | |
| US8373197B2 (en) | Circuit device | |
| US9627356B2 (en) | Semiconductor module, semiconductor module arrangement and method for operating a semiconductor module | |
| US11605613B2 (en) | Semiconductor device | |
| US10985110B2 (en) | Semiconductor package having an electromagnetic shielding structure and method for producing the same | |
| US9159715B2 (en) | Miniaturized semiconductor device | |
| US10916531B2 (en) | Semiconductor module | |
| JP4146888B2 (en) | Semiconductor module and method for manufacturing semiconductor module | |
| US20240186221A1 (en) | Semiconductor device | |
| US10290567B2 (en) | Transistor package with three-terminal clip | |
| US11133303B2 (en) | Semiconductor device and semiconductor arrangement comprising semiconductor devices | |
| US11527456B2 (en) | Power module with organic layers | |
| CN117712093A (en) | Power device, power device packaging module and method and motor driving system | |
| US11942452B2 (en) | Semiconductor module arrangement | |
| JP7392319B2 (en) | semiconductor equipment | |
| CN112750800A (en) | Semiconductor power module | |
| CN115668508A (en) | Semiconductor device with a plurality of semiconductor chips | |
| US20240006402A1 (en) | Semiconductor device | |
| JP7487411B2 (en) | Electrical contact configuration, power semiconductor module, method for manufacturing electrical contact configuration, and method for manufacturing power semiconductor module | |
| CN117712092A (en) | Power device packaging module and power device packaging method | |
| EP4113605A1 (en) | Power semiconductor module arrangement | |
| WO2023243418A1 (en) | Semiconductor device | |
| US20220367372A1 (en) | Semiconductor device | |
| CN118679569A (en) | Module assembly of multiple semiconductor devices with insulating substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |