CN117712092A - Power device packaging module and power device packaging method - Google Patents
Power device packaging module and power device packaging method Download PDFInfo
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- CN117712092A CN117712092A CN202311629005.6A CN202311629005A CN117712092A CN 117712092 A CN117712092 A CN 117712092A CN 202311629005 A CN202311629005 A CN 202311629005A CN 117712092 A CN117712092 A CN 117712092A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 31
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- 239000012528 membrane Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 32
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- 239000000463 material Substances 0.000 claims description 19
- 239000004642 Polyimide Substances 0.000 claims description 15
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- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000001465 metallisation Methods 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 9
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- 238000009713 electroplating Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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Abstract
The present application relates generally to the field of semiconductor technology, and more particularly to a power device packaging module and a power device packaging method. A power device package module according to one aspect of the present application includes: a substrate comprising a first side and a second side opposite the first side; a flexible membrane located on a first side of the substrate and having a plurality of through holes; one or more power devices, each power device located on a surface of the flexible film facing away from the first side of the substrate and comprising a front surface facing the surface provided with a plurality of electrodes, a rear surface opposite the front surface, a portion of the plurality of electrodes being integrated within an active area and connected to the first side of the substrate via the plurality of vias of the flexible film; and a heat dissipation member located on the second side of the substrate for dissipating heat generated by the one or more power devices.
Description
Technical Field
The present application relates generally to the field of semiconductor technology, and more particularly to a power device packaging module and a power device packaging method.
Background
The third generation semiconductor materials silicon carbide (SiC) and gallium nitride (GaN) have the advantages of large forbidden band width, high electron mobility, high breakdown field intensity, good heat conduction performance and the like, and have very strong spontaneous and piezoelectric polarization effects, so that compared with the traditional silicon-based materials, the silicon-based material is more suitable for manufacturing high-frequency, high-voltage and high-temperature-resistant power devices with high power density, and has obvious advantages especially in the field of high-efficiency electric energy conversion.
However, the current packaging technology and material design of power devices are still based on the technology of conventional silicon-based power devices, which cannot be adapted to the development direction of high integration, multi-functionalization and high power of the power devices, and the performance of the power devices based on the third generation semiconductor materials silicon carbide (SiC) and gallium nitride (GaN) is limited in internal connection, heat dissipation and protection, etc., so that the material advantages thereof cannot be fully exerted.
Disclosure of Invention
To solve or at least alleviate one or more of the above problems, the following solutions are provided.
According to a first aspect of the present application, there is provided a power device package module comprising: a substrate comprising a first side and a second side opposite the first side; a flexible membrane located on a first side of the substrate and having a plurality of through holes; one or more power devices, each power device located on a surface of the flexible film facing away from the first side of the substrate and comprising a front surface facing the surface provided with a plurality of electrodes, a rear surface opposite the front surface, a portion of the plurality of electrodes being integrated within an active area and connected to the first side of the substrate via the plurality of vias of the flexible film; and a heat dissipation member located on the second side of the substrate for dissipating heat generated by the one or more power devices.
The power device package module according to an embodiment of the present application, wherein the flexible film is implemented as a polyimide material.
The power device package module according to an embodiment of the present application or any of the above embodiments, wherein the plurality of electrodes includes a gate electrode, a drain electrode, and a source electrode, the drain electrode and the source electrode being configured as a multi-finger structure integrated within the active region and connected to the first side of the substrate via the plurality of through holes of the flexible film, the gate electrode being disposed outside the active region and connected to a surface of the flexible film facing away from the first side of the substrate.
The power device package module according to an embodiment of the application or any of the embodiments above, wherein a surface of the flexible film facing away from the first side of the substrate and a surface facing the first side of the substrate are deposited with a metallic material at a location in contact with each of the plurality of electrodes.
The power device package module according to an embodiment of the present application or any one of the above embodiments, wherein the power device package module further includes: and a metal layer disposed on the back surface of each power device and extending to the first side of the substrate for fixing each power device to the first side of the substrate and conducting heat generated by each power device.
The power device package module according to an embodiment of the present application or any one of the above embodiments, wherein the power device package module further includes: a temperature sensor disposed proximate to the plurality of electrodes of each power device, the temperature sensor configured to sense a temperature of each power device and generate a signal indicative of the sensed temperature exceeding a threshold temperature.
According to a second aspect of the present application, there is provided a power device package module comprising: a substrate comprising a first layer and a second layer, the first layer configured to have a first recess; a flexible film located between the first layer and the second layer of the substrate and having a plurality of through holes; one or more power devices, each power device disposed in the first recess of the first layer and including a front surface facing the flexible film provided with a plurality of electrodes and a back surface opposite the front surface, a portion of the plurality of electrodes being integrated within an active area and connected to the second layer of the substrate via the plurality of through holes of the flexible film; and a driving protection part connected to a side of the second layer of the substrate facing away from the flexible film and for driving and protecting the one or more power devices.
The power device package module according to an embodiment of the present application, wherein the flexible film is implemented as a polyimide material.
The power device package module according to an embodiment of the present application or any one of the embodiments above, wherein the plurality of electrodes includes a gate electrode, a drain electrode, and a source electrode, the drain electrode and the source electrode being configured as a multi-finger structure integrated within the active region and connected to the second layer of the substrate via the plurality of through holes of the flexible film, the gate electrode being disposed outside the active region.
The power device package module according to an embodiment of the application or any of the embodiments above, wherein a surface of the flexible film facing the first layer of the substrate and a surface of the second layer of the substrate are deposited with a metallic material at a location in contact with each of the plurality of electrodes.
The power device package module according to an embodiment of the present application or any one of the above embodiments, wherein the power device package module further includes: a metal layer disposed on the back side of the one or more power devices and extending to the first layer of the substrate for securing the one or more power devices into the first recess of the first layer of the substrate and conducting heat generated by the one or more power devices.
The power device package module according to an embodiment of the present application or any one of the above embodiments, wherein the power device package module further includes: a temperature sensor disposed proximate to the plurality of electrodes of each power device, the temperature sensor configured to sense a temperature of each power device and generate a signal indicative of the sensed temperature exceeding a threshold temperature.
The power device package module according to an embodiment of the present application or any of the above embodiments, wherein the drive protection component includes one or more of: passive components, gate drivers, logic protection circuits.
The power device package module according to an embodiment of the present application or any one of the above embodiments, wherein the power device package module further includes: and a heat dissipation part at least positioned on one side of the metal layer facing away from the one or more power devices and used for dissipating heat generated by the one or more power devices.
The power device package module according to an embodiment of the present application or any one of the embodiments above, wherein the second layer of the substrate is configured to have a second recess corresponding to the first recess of the first layer, an insulating member is disposed in the second recess, and the heat dissipation member is further located on a side of the insulating member facing away from the flexible film.
According to a third aspect of the present application, there is provided a power device packaging method, including: providing a substrate comprising a first side and a second side opposite the first side; providing a flexible membrane having a plurality of through holes on a first side of the substrate; providing one or more power devices on a surface of the flexible film facing away from the first side of the substrate, each power device comprising a front surface facing the surface provided with a plurality of electrodes and a back surface opposite the front surface, a portion of the plurality of electrodes being integrated within an active area and connected to the first side of the substrate via the plurality of vias of the flexible film; and providing a heat sink member on a second side of the substrate for dissipating heat generated by the one or more power devices.
According to a fourth aspect of the present application, there is provided a power device packaging method, including: providing a substrate comprising a first layer and a second layer, the first layer being configured with a first recess; disposing a flexible film having a plurality of through holes between the first layer and the second layer of the substrate; disposing one or more power devices in the first recess of the first layer, each power device including a front face provided with a plurality of electrodes facing the flexible film and a back face opposite the front face, a portion of the plurality of electrodes being integrated within an active area and connected to the second layer of the substrate via the plurality of through holes of the flexible film; and connecting a drive protection component to a side of the second layer of the substrate facing away from the flexible film for driving and protecting the one or more power devices.
According to the power device packaging scheme of one or more embodiments of the application, an improved packaging structure suitable for high integration, multifunction and high power of a power device can be provided, for example, the internal connection of a packaging module is optimized through a plurality of through holes of a flexible film instead of a traditional wire bonding mode, and the front side heat dissipation of the power device is realized by arranging the power device on the surface of the flexible film in a flip-chip mode (namely, the front side of the power device, provided with a plurality of electrodes, faces the flexible film), so that the heat dissipation efficiency is improved. Furthermore, power device packaging schemes according to one or more embodiments of the present application enable third generation semiconductor materials silicon carbide (SiC) and gallium nitride (GaN) to fully exploit their material advantages when applied to power devices.
Drawings
The foregoing and/or other aspects and advantages of the present application will become more apparent and more readily appreciated from the following description of the various aspects taken in conjunction with the accompanying drawings in which like or similar elements are designated with the same reference numerals. In the drawings:
fig. 1 shows a schematic structure of a conventional lateral type power device.
Fig. 2 shows a schematic structural diagram of a lateral type power device in accordance with one or more embodiments of the present application.
Fig. 3 illustrates a power device package connection schematic in accordance with one or more embodiments of the present application.
Fig. 4 shows a schematic cross-sectional structure of the power device package connection provided in fig. 3.
Fig. 5 illustrates a schematic structure of a power device package module in accordance with one or more embodiments of the present application.
Fig. 6 illustrates a schematic structure of a power device package module in accordance with one or more embodiments of the present application.
Fig. 7 illustrates a schematic structure of a power device package module in accordance with one or more embodiments of the present application.
Fig. 8 illustrates a flow diagram of a power device packaging method in accordance with one or more embodiments of the present application.
Fig. 9 illustrates a flow diagram of a power device packaging method in accordance with one or more embodiments of the present application.
Detailed Description
Example embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings. It should be noted that the following description is for purposes of explanation and illustration, and thus should not be construed as limiting the present application. Those skilled in the art may make electrical, mechanical, logical and structural changes in these embodiments as may be made in the practice without departing from the principles of the present application without departing from the scope thereof. Furthermore, one skilled in the art will appreciate that one or more features of the different embodiments described below may be combined for any particular application scenario or actual need.
Terms such as "comprising" and "including" mean that in addition to having elements and steps that are directly and explicitly recited in the description, the technical solutions of the present application do not exclude the presence of other elements and steps not directly or explicitly recited. The terms such as "first" and "second" do not denote the order of units in terms of time, space, size, etc. but rather are merely used to distinguish one unit from another.
In the context of the present application, the term "lateral power device" refers to a power device in which the electrodes are located on the same side of the power device, wherein the side on which the electrodes are provided may be referred to as the front side of the power device and the side opposite the front side on which the electrodes are not provided may be referred to as the back side of the power device. By way of example, the lateral power device may include a high electron mobility transistor (High Electron Mobility Transist, HEMT), a schottky barrier diode (Schottky Barrier Diode, SBD), an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT), a Metal-Oxide-semiconductor Field-Effect Transistor (MOSFET), a Junction Field-Effect Transistor (JFET), a bipolar Junction transistor (Bipolar Junction Transistor, BJT), and the like.
Fig. 1 shows a schematic structure of a conventional lateral type power device.
As shown in fig. 1, the lateral power device 100 includes a drain electrode 110, an active region 120, a source electrode 130, and a gate electrode 140. A plurality of thin wires are disposed within the active region 120 for guiding current from the drain electrode 110 to the source electrode 130.
As shown in fig. 1, the drain electrode 110 and the source electrode 130 of the conventional lateral type power device 100 are respectively located outside the active regions 120 at both ends of the lateral type power device 100 for connection with external devices according to the package and power requirements. However, such a design increases the overall footprint and manufacturing cost of the power device, which is detrimental to a miniaturized design of the power device, and also to a uniform distribution of internal current.
Fig. 2 shows a schematic structural diagram of a lateral type power device in accordance with one or more embodiments of the present application.
As shown in fig. 2, the lateral power device 200 includes a drain electrode 210, an active region 220 (shown as a hatched portion), a source electrode 230, and a gate electrode 240. The drain electrode 210 and the source electrode 230 are configured in a multi-finger structure to be disposed crosswise and integrated within the active region 220. In the multi-finger structure, a plurality of drain electrodes 210 and source electrodes 230 are alternately arranged in parallel within the active region 220, improving the conduction efficiency of the drain electrodes 210 to the source electrodes 230 and the heat conduction efficiency.
Compared to the structure of the conventional lateral type power device 100 shown in fig. 1, the lateral type power device 200 reduces the overall occupied area and manufacturing cost, and achieves effective heat conduction and uniform distribution of internal current from the drain electrode 210 to the source electrode 230.
Fig. 3 illustrates a power device package connection schematic in accordance with one or more embodiments of the present application.
As shown in fig. 3, power device package connection 300 illustrates the connection of flexible membrane 310 to power device 320. It should be noted that the power device package connection 300 shown in fig. 3 may be applied not only to the lateral type power device 200 shown in fig. 2, but also to the lateral type power device 100 shown in fig. 1. The following will describe taking the implementation of the power device 320 as the lateral type power device 200 shown in fig. 2 as an example.
Alternatively, the flexible film 310 may be implemented using a polyimide insulating material to form a polyimide flexible film.
As shown in fig. 3, the flexible film 310 may have a plurality of through holes 3101, and the plurality of through holes 3101 may be formed, for example, by laser perforation techniques. In order to electrically connect with the power device 320, a metal material may be deposited on the upper and lower surfaces of the flexible film 310 through an electroplating process, then a portion of the deposited metal may be etched away according to design requirements (e.g., structural requirements, conductive requirements, insulation requirements, connection requirements, etc.) of the power device 320, and then the flexible film 310 may be connected with the front surface of the power device 320 through the remaining deposited metal through a soldering process or the like, i.e., the power device 320 may be disposed on the flexible film 310 in a flip-chip manner. In one embodiment, copper may be deposited on the upper and lower surfaces of the flexible film 310 through an electroplating process to a thickness of about 100 μm, and the deposited copper may be etched such that copper is deposited on the upper and lower surfaces of the flexible film 310 at a position contacting each electrode of the power device 320, and finally the drain electrode and the source electrode of the power device 320 may be connected to a side of the flexible film 310 remote from the power device 320 via a plurality of through holes 3101, and the gate electrode of the power device 320 may be directly connected to a side of the flexible film 310 close to the power device 320.
By forming the flexible film 310 using polyimide insulating material, parasitic inductance and power device packaging costs can be reduced, allowing for widespread use in integrated circuit packaging. The electrical connection between the flexible film 310 and the power device 320 is optimized by using the plurality of through holes 3101 instead of the conventional wire bonding manner, so that the electrode of the power device 320 can be disposed in the middle area of the power device 320 without being disposed only at the edges and corners, thereby reducing the RC delay of the power device 320 and improving the reliability of the power device 320.
Fig. 4 shows a schematic cross-sectional structure of the power device package connection provided in fig. 3.
As shown in fig. 4, power device package connection 400 includes a flexible film 410, a power device 420, and a metal deposit 430 between flexible film 410 and power device 420.
In fig. 4, the flexible film 410 may be formed with a plurality of through holes, for example, by a laser perforation technique, the drain electrode D and the source electrode S of the power device 420 may be connected to a side of the flexible film 410 remote from the power device 420 via the plurality of through holes, and the gate electrode G of the power device 420 may be directly connected to a side of the flexible film 410 close to the power device 420. As described above with reference to fig. 3, the surface of the flexible film 410 may have a metal deposit 430. The metal deposition 430 may be formed by: first, a metal material is deposited on the surface of the flexible film 410 by an electroplating process, and then, a portion of the deposited metal, i.e., the metal deposit 430, may be etched away according to design requirements (e.g., structural requirements, electrical conductivity requirements, insulation requirements, connection requirements, etc.) of the power device 420. Illustratively, the flexible film 410 may be attached to the front side of the power device 420 by metal deposition 430 using a soldering or the like process, i.e., the power device 420 is flip-chip mounted on the flexible film 410. It should be noted that although not shown in fig. 4, the lower surface of the flexible film 410 may also be provided with a metal deposit 430 in a similar manner for making electrical connection with other components.
Fig. 5 illustrates a schematic structure of a power device package module in accordance with one or more embodiments of the present application.
As shown in fig. 5, the power device package module 500 includes a substrate 510, a flexible film 520, a power device 530, a heat sink 540, and a metal layer 550.
The substrate 510 may include a first layer 5101, a second layer 5102, and a third layer 5103, wherein the first layer 5101 and the third layer 5103 may be implemented as a metallic material (e.g., copper) and the second layer 5102 may be implemented as an insulating material (e.g., a ceramic material such as aluminum nitride, aluminum oxide, etc.). Alternatively, the substrate 510 may omit the third layer 5103 and include the first layer 5101 and the second layer 5102.
The flexible membrane 520 may have a plurality of through holes. Alternatively, the flexible film 520 may be implemented using a polyimide insulating material to be formed as a polyimide flexible film.
The power device 530 is located at a surface of the flexible film 520 facing away from the first layer 5101 of the substrate 510 and includes a front surface toward the surface where a plurality of electrodes (e.g., drain electrode D, source electrode S, and gate electrode G) are disposed and a rear surface opposite to the front surface. As an example, fig. 5 shows a power device package module 500 comprising two symmetrically arranged power devices 530. It should be noted that the power device package module 500 may also include one or more power devices 530. The structure of the power device package module 500 will be described in detail below with the aid of the power device 530 shown on the right in fig. 5.
In fig. 5, the flexible membrane 520 and the power device 530 may be connected by means of the connection described above with reference to fig. 3 and 4. For example, the flexible film 520 may be formed with a plurality of through holes, for example, by a laser perforation technique, the drain electrode D and the source electrode S of the power device 530 may be connected to the first layer 5101 of the substrate 510 via the plurality of through holes, and the gate electrode G of the power device 530 may be directly connected to a side of the flexible film 520 close to the power device 530. As described above with reference to fig. 3, the upper and lower surfaces of the flexible membrane 520 may have a metal deposit 560. The metal deposition 560 may be formed by: first, metal materials are deposited on the upper and lower surfaces of the flexible film 520 through an electroplating process, and then, a part of the deposited metal may be etched away according to design requirements (e.g., structural requirements, conductive requirements, insulation requirements, connection requirements, etc.) of the power device 530, and the remaining deposited metal is the metal deposition 560. Illustratively, the flexible film 520 may be connected to the front side of the power device 530 by metal deposition 560 using a soldering or the like process, i.e., the power device 530 is flip-chip mounted on the flexible film 520. Further, the flexible film 520 may be connected to the first layer 5101 of the substrate 510 by soldering or sintering using the metal deposition 560 of the lower surface thereof.
By forming the flexible film 520 using polyimide insulating material, parasitic inductance and power device packaging costs can be reduced, allowing for widespread use in integrated circuit packaging. The electrical connection of the flexible film 520 and the power device 530 is optimized by the plurality of through holes of the flexible film 520 and the metal deposition 560 on the upper surface thereof instead of the conventional wire bonding manner, so that the electrode of the power device 530 can be disposed in the middle region of the power device 530 without being disposed only at the edges and corners, thereby reducing the RC delay of the power device 530 and improving the reliability of the power device 530.
A heat sink 540 may be disposed on the third layer 5103 of the substrate 510 and configured to dissipate heat generated by the power device 530. Alternatively, the heat sink 540 may also be disposed directly on the second layer 5102 of the substrate 510 and configured to dissipate heat generated by the power device 530. By arranging the power device 530 on the flexible film 520 in a flip-chip manner as described above and by optimizing the electrical connection of the flexible film 520 and the power device 530 by the plurality of through holes of the flexible film 520 and the metal deposition 560 on the upper surface thereof instead of the conventional wire bonding manner, the front side heat dissipation of the power device 530 can be achieved, i.e. the heat dissipation member 540 is arranged towards the front side of the power device 530. Since the heat generated by the power device 530 is mainly derived from the heat generated by each electrode, the heat dissipation efficiency of the heat dissipation member 540 disposed toward the front surface of the power device 530 can be significantly improved compared to the conventional heat dissipation method in which the heat dissipation member is disposed on the back surface of the power device (i.e., the surface excluding the electrode).
The metal layer 550 may be disposed on the back side of the power device 530 and extend to the first layer 5101 of the substrate 510 for fixing the power device 530 to the first layer 5101 of the substrate 510 and conducting heat generated by the power device 530. Alternatively, the metal layer 550 may be implemented as a copper bridge structure.
Optionally, the power device package module 500 may further include a temperature sensor (not shown in fig. 5) that may be disposed proximate to the plurality of electrodes of the power device 530, for example, between the flexible film 520 and the first layer 5101 of the substrate 510 proximate to the source electrode S. The temperature sensor may be configured to sense the temperature of the power device 530 and generate a signal indicative of the sensed temperature exceeding a threshold temperature for controlling the power device 530 to be turned off or the load protection operation to be enabled, etc. By the power device package module 500 according to one or more embodiments of the present application, a temperature sensor can be disposed at a position close to a plurality of electrodes of the power device 530, improving accuracy of temperature sensing.
Alternatively, the power device package module 500 may be molded by integral plastic encapsulation or other encapsulation modes (e.g., by a potting compound material).
According to the power device packaging module, an improved packaging structure suitable for high integration, multifunction and high power of a power device can be provided, internal connection of the packaging module is optimized through a plurality of through holes of a flexible film instead of a traditional wire bonding mode, front-side heat dissipation of the power device is achieved through arranging the power device on the surface of the flexible film in a flip-chip mode (namely, the front side of the power device, provided with a plurality of electrodes, faces the flexible film), and heat dissipation efficiency is improved. Furthermore, power device packaging schemes according to one or more embodiments of the present application enable third generation semiconductor materials silicon carbide (SiC) and gallium nitride (GaN) to fully exploit their material advantages when applied to power devices. The power device packaging module according to one or more embodiments of the present application has the advantages of simple structure, easy implementation and cost saving.
Fig. 6 illustrates a schematic structure of a power device package module in accordance with one or more embodiments of the present application.
As shown in fig. 6, the power device package module 600 includes a substrate 610, a flexible film 620, a power device 630, a driving protection part 640, a metal layer 650, and a heat dissipation part 660.
The substrate 610 may include a first layer 6101 and a second layer 6102, and the first layer 6101 may be configured with a first recess C for accommodating the power device 630. Alternatively, the substrate 610 may be implemented as a conventional PCB material, such as an FR-4 grade material, a composite of so-called tetra-functional (Tera-functional) epoxy plus filler and glass fiber. Optionally, metal traces T, such as copper traces, may be disposed within the first layer 6101 and the second layer 6102 of the substrate 610.
The flexible film 620 may be disposed between the first layer 6101 and the second layer 6102 of the substrate 610 and have a plurality of through holes. Alternatively, the flexible film 620 may be implemented using a polyimide insulating material to be formed as a polyimide flexible film.
The power device 630 may be disposed in a first recess C of a first layer 6101 of the substrate 610 and include a front surface provided with a plurality of electrodes (e.g., including a drain electrode D, a source electrode S, and a gate electrode G) toward the flexible film 620 and a rear surface opposite to the front surface. As an example, fig. 6 shows a power device package module 600 including two symmetrically arranged power devices 630. It should be noted that the power device package module 600 may also include one or more power devices 630. The structure of the power device package module 600 will be described in detail below with the aid of the power device 630 shown on the right in fig. 6.
In fig. 6, flexible film 620 and power device 630 may be connected by means of the connection described above with reference to fig. 3 and 4. For example, the flexible film 620 may form a plurality of through holes, for example, by a laser perforation technique, the drain electrode D and the source electrode S of the power device 630 may be connected to the second layer 6102 of the substrate 610 via the plurality of through holes of the flexible film 620, and the gate electrode G of the power device 630 may be connected to the driving protection member 640 via the through holes of the flexible film 620 and the metal trace T inside the second layer 6102 of the substrate 610. As described above with reference to fig. 3, the upper and lower surfaces of the flexible film 620 may be deposited with a metal material, which may be etched away according to design requirements (e.g., structural requirements, conductive requirements, insulation requirements, connection requirements, etc.) of the power device 630, and then the flexible film 620 is connected to the front surface of the power device 630 through the remaining metal deposition by a soldering process or the like, i.e., the power device 630 is disposed on the flexible film 620 in a flip-chip manner. Further, the flexible film 620 may be connected to the second layer 6102 of the substrate 610 by a remaining metal deposition in a soldering or sintering manner.
By forming the flexible film 620 using polyimide insulating material, parasitic inductance and power device packaging costs can be reduced, allowing for widespread use in integrated circuit packaging. The electrical connection between the flexible film 620 and the power device 630 is optimized by the plurality of through holes of the flexible film 620 instead of the conventional wire bonding manner, so that the electrode of the power device 630 can be disposed in the middle area of the power device 630 without being disposed only at the edges and corners, thereby reducing the RC delay of the power device 630 and improving the reliability of the power device 630.
The driving protection part 640 is connected to a side of the second layer 6102 of the substrate 610 facing away from the flexible film 620 and serves to drive and protect the power device 630. Alternatively, the driving protection part 640 may include passive components (e.g., capacitors, resistors, inductors, various sensors, etc.), gate drivers, logic protection circuits, etc.
The metal layer 650 may be disposed on the back surface of the power device 630 and extend to the first layer 6101 of the substrate 610 for fixing the power device 630 into the first recess C of the first layer 6101 of the substrate 610 and conducting heat generated by the power device 630. Alternatively, the metal layer 650 may be implemented as a copper bridge structure.
The heat dissipation member 660 may be disposed at least on a side of the metal layer 650 facing away from the power device 630 and configured to dissipate heat generated by the power device 630. Optionally, the second layer 6102 of the substrate 610 may also be configured with a second recess corresponding to the first recess C of the first layer 6101, in which a dielectric may be provided, and a heat dissipation member 660 may also be provided at a side of the dielectric facing away from the flexible film 620, an embodiment for double sided heat dissipation of a power device package module will be further described below in connection with fig. 7.
Optionally, the power device package module 600 may further include a temperature sensor (not shown in fig. 6) that may be disposed proximate to the plurality of electrodes of the power device 630, for example, between the flexible film 620 and the first layer 6101 of the substrate 610 proximate to the source electrode S. The temperature sensor may be configured to sense the temperature of the power device 630 and generate a signal indicative of the sensed temperature exceeding a threshold temperature for controlling the power device 630 to be turned off or the load protection operation to be enabled, etc. By the power device package module 600 according to one or more embodiments of the present application, it is possible to dispose a temperature sensor at a position close to a plurality of electrodes of the power device 630, improving accuracy of temperature sensing.
Alternatively, the power device package module 600 may be molded by integral plastic encapsulation or other encapsulation modes (e.g., by a potting compound material).
The power device package module according to one or more embodiments of the present application can integrate a driving protection part and can incorporate a multi-layer PCB process, thereby achieving high integration and applicability of the power device package module.
Fig. 7 illustrates a schematic structure of a power device package module in accordance with one or more embodiments of the present application.
In fig. 7, the power device package module 600 shown in fig. 6 may be modified according to a heat dissipation requirement and an application scenario of the power device package module to implement double-sided heat dissipation of the power device.
As shown in fig. 7, the power device package module 700 includes a substrate 710, a flexible film 720, a power device 730, a driving protection part 740, a metal layer 750, and a heat dissipation part 760.
The substrate 710 may include a first layer 7101 and a second layer 7102, the first layer 7101 may be configured to have a first recess C1 for receiving the power device 730, the second layer 7102 may be configured to have a second recess C2 corresponding to the first recess C1, and an insulating member 770 (e.g., a ceramic member) may be disposed in the second recess C2. Alternatively, the substrate 710 may be implemented as a conventional PCB material, such as an FR-4 grade material, a composite of so-called tetra-functional (Tera-functional) epoxy plus filler and glass fiber. Optionally, metal traces T, such as copper traces, may be disposed within the first layer 7101 and the second layer 7102 of the substrate 710.
The flexible film 720 may be disposed between the first layer 7101 and the second layer 7102 of the substrate 710 and have a plurality of through holes. Alternatively, the flexible film 720 may be implemented using a polyimide insulating material to be formed as a polyimide flexible film.
The power device 730 may be disposed in the first recess C1 of the first layer 7101 of the substrate 710 and include a front surface toward the flexible film 720 where a plurality of electrodes (e.g., including a drain electrode D, a source electrode S, and a gate electrode G) are disposed and a rear surface opposite to the front surface. As an example, fig. 7 shows a power device package module 700 including two symmetrically arranged power devices 730. It should be noted that the power device package module 700 may also include one or more power devices 730.
In fig. 7, the flexible membrane 720 and the power device 730 may be connected by means of the connection described above with reference to fig. 3 and 4. For example, the flexible film 720 may form a plurality of through holes, for example, by a laser perforation technique, and the drain electrode D, the source electrode S, and the gate electrode G of the power device 730 may be connected to the second layer 7102 of the substrate 710 via the plurality of through holes of the flexible film 720. As described above with reference to fig. 3, the upper and lower surfaces of the flexible film 720 may be deposited with a metal material, which may be etched away according to the design requirements (e.g., structural requirements, conductive requirements, insulation requirements, connection requirements, etc.) of the power device 730, and then the flexible film 720 is connected to the front surface of the power device 730 through the remaining metal deposition by a soldering process or the like, i.e., the power device 730 is flip-chip mounted on the flexible film 720. Further, the flexible film 720 may be connected to the second layer 7102 of the substrate 710 by way of a remaining metal deposit in a welded or sintered manner.
The driving protection part 740 is connected to a side of the second layer 7102 of the substrate 710 facing away from the flexible film 720 and serves to drive and protect the power device 730. Alternatively, the driving protection part 740 may include passive components (e.g., capacitors, resistors, inductors, various sensors, etc.), gate drivers, logic protection circuits, etc.
The metal layer 750 may be disposed at the rear surface of the power device 730 and extend to the first layer 7101 of the substrate 710 for fixing the power device 730 into the first recess C1 of the first layer 7101 of the substrate 710 and conducting heat generated by the power device 730. Alternatively, the metal layer 750 may be implemented as a copper bridge structure.
The heat dissipation member 760 may be disposed on a side of the metal layer 750 facing away from the power device 730 and on a side of the insulating member 770 facing away from the flexible film 720, for achieving bidirectional heat dissipation of the power device 730. Optionally, the side of the insulator 770 facing the flexible membrane 720 may have a metal layer for making electrical connection with the electrodes of the power device 730.
Optionally, the power device package module 700 may further include a temperature sensor (not shown in fig. 7) that may be disposed proximate to the plurality of electrodes of the power device 730, for example, between the flexible film 720 and the first layer 7101 of the substrate 710 proximate to the source electrode S. The temperature sensor may be configured to sense the temperature of the power device 730 and generate a signal indicative of the sensed temperature exceeding a threshold temperature for controlling the power device 730 to be turned off or the load protection operation to be enabled, etc. By the power device package module 700 according to one or more embodiments of the present application, it is possible to dispose the temperature sensor at a position close to the plurality of electrodes of the power device 730, improving accuracy of temperature sensing.
Alternatively, the power device package module 700 may be molded by integral plastic encapsulation or other encapsulation modes (e.g., by a potting compound material).
The power device package module according to one or more embodiments of the present application can integrate a driving protection part and can incorporate a multi-layer PCB process, thereby achieving high integration and applicability of the power device package module. In addition, the power device packaging module according to one or more embodiments of the present application can realize double-sided heat dissipation of the power device, is suitable for packaging of the power device with high power density, and improves reliability.
Fig. 8 illustrates a flow diagram of a power device packaging method in accordance with one or more embodiments of the present application.
As shown in fig. 8, in step S810, a substrate is provided, which may include a first side and a second side opposite to the first side.
In step S820, a flexible film having a plurality of through holes is disposed on a first side of a substrate.
In step S830, one or more power devices are disposed on a surface of the flexible film facing away from the first side of the substrate, each power device including a front surface facing the surface on which a plurality of electrodes are disposed and a back surface opposite the front surface, a portion of the plurality of electrodes being integrated within the active area and connected to the first side of the substrate via a plurality of vias of the flexible film.
In step S840, a heat sink is disposed on the second side of the substrate for dissipating heat generated by the one or more power devices.
Fig. 9 illustrates a flow diagram of a power device packaging method in accordance with one or more embodiments of the present application.
As shown in fig. 9, in step S910, a substrate is provided, the substrate including a first layer and a second layer, the first layer being configured to have a first recess.
In step S920, a flexible film having a plurality of through holes is disposed between the first layer and the second layer of the substrate.
In step S930, one or more power devices are disposed in the first recess of the first layer, each power device including a front surface facing the flexible film provided with a plurality of electrodes and a back surface opposite to the front surface, a portion of the plurality of electrodes being integrated within the active area and connected to the second layer of the substrate via a plurality of through holes of the flexible film.
In step S940, a drive protection component is connected to a side of the second layer of the substrate facing away from the flexible film for driving and protecting the one or more power devices.
The embodiments and examples set forth herein are presented to best explain the embodiments in accordance with the application and its particular application and to thereby enable those skilled in the art to make and use the application. However, those skilled in the art will recognize that the foregoing description and examples have been presented for the purpose of illustration and example only. The description as set forth is not intended to cover various aspects of the application or to limit the application to the precise form disclosed.
Claims (10)
1. A power device package module, the power device package module comprising:
a substrate comprising a first side and a second side opposite the first side;
a flexible membrane located on a first side of the substrate and having a plurality of through holes;
one or more power devices, each power device located on a surface of the flexible film facing away from the first side of the substrate and comprising a front surface facing the surface provided with a plurality of electrodes, a rear surface opposite the front surface, a portion of the plurality of electrodes being integrated within an active area and connected to the first side of the substrate via the plurality of vias of the flexible film; and
a heat sink member located on the second side of the substrate for dissipating heat generated by the one or more power devices.
2. The power device package module of claim 1 wherein the flexible film is implemented as a polyimide material,
wherein the plurality of electrodes includes a gate electrode, a drain electrode, and a source electrode configured as a multi-finger structure integrated within the active region and connected to a first side of the substrate via the plurality of through holes of the flexible film, the gate electrode disposed outside the active region and connected to a surface of the flexible film facing away from the first side of the substrate,
wherein a surface of the flexible film facing away from the first side of the substrate and a surface facing the first side of the substrate are deposited with a metallic material at a location in contact with each of the plurality of electrodes.
3. The power device package module of claim 1, wherein the power device package module further comprises:
and a metal layer disposed on the back surface of each power device and extending to the first side of the substrate for fixing each power device to the first side of the substrate and conducting heat generated by each power device.
4. The power device package module of claim 1, wherein the power device package module further comprises:
a temperature sensor disposed proximate to the plurality of electrodes of each power device, the temperature sensor configured to sense a temperature of each power device and generate a signal indicative of the sensed temperature exceeding a threshold temperature.
5. A power device package module, the power device package module comprising:
a substrate comprising a first layer and a second layer, the first layer configured to have a first recess;
a flexible film located between the first layer and the second layer of the substrate and having a plurality of through holes;
one or more power devices, each power device disposed in the first recess of the first layer and including a front surface facing the flexible film provided with a plurality of electrodes and a back surface opposite the front surface, a portion of the plurality of electrodes being integrated within an active area and connected to the second layer of the substrate via the plurality of through holes of the flexible film; and
a driving protection member connected to a side of the second layer of the substrate facing away from the flexible film and for driving and protecting the one or more power devices.
6. The power device package module of claim 5 wherein the flexible film is implemented as a polyimide material,
wherein the plurality of electrodes includes a gate electrode, a drain electrode, and a source electrode configured as a multi-finger structure integrated within the active region and connected to the second layer of the substrate via the plurality of through holes of the flexible film, the gate electrode being disposed outside the active region,
wherein a surface of the flexible film facing the first layer of the substrate and a surface of the second layer of the substrate are deposited with a metallic material at a location in contact with each of the plurality of electrodes,
wherein the power device package module further comprises:
a metal layer disposed on a back side of the one or more power devices and extending to the first layer of the substrate for securing the one or more power devices into the first recess of the first layer of the substrate and conducting heat generated by the one or more power devices,
wherein the power device package module further comprises:
a temperature sensor disposed proximate to the plurality of electrodes of each power device, the temperature sensor configured to sense a temperature of each power device and generate a signal indicative of the sensed temperature exceeding a threshold temperature,
wherein the drive protection component comprises one or more of: passive components, gate drivers, logic protection circuits.
7. The power device package module of claim 6, wherein the power device package module further comprises:
and a heat dissipation part at least positioned on one side of the metal layer facing away from the one or more power devices and used for dissipating heat generated by the one or more power devices.
8. The power device package module of claim 7, wherein the second layer of the substrate is configured to have a second recess corresponding to the first recess of the first layer, an insulator disposed in the second recess, the heat sink member further located on a side of the insulator facing away from the flexible film.
9. A power device packaging method, the power device packaging method comprising:
providing a substrate comprising a first side and a second side opposite the first side;
providing a flexible membrane having a plurality of through holes on a first side of the substrate;
providing one or more power devices on a surface of the flexible film facing away from the first side of the substrate, each power device comprising a front surface facing the surface provided with a plurality of electrodes and a back surface opposite the front surface, a portion of the plurality of electrodes being integrated within an active area and connected to the first side of the substrate via the plurality of vias of the flexible film; and
a heat sink is disposed on the second side of the substrate for dissipating heat generated by the one or more power devices.
10. A power device packaging method, the power device packaging method comprising:
providing a substrate comprising a first layer and a second layer, the first layer being configured with a first recess;
disposing a flexible film having a plurality of through holes between the first layer and the second layer of the substrate;
disposing one or more power devices in the first recess of the first layer, each power device including a front face provided with a plurality of electrodes facing the flexible film and a back face opposite the front face, a portion of the plurality of electrodes being integrated within an active area and connected to the second layer of the substrate via the plurality of through holes of the flexible film; and
a drive protection component is connected to a side of the second layer of the substrate facing away from the flexible film for driving and protecting the one or more power devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311629005.6A CN117712092A (en) | 2023-11-28 | 2023-11-28 | Power device packaging module and power device packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311629005.6A CN117712092A (en) | 2023-11-28 | 2023-11-28 | Power device packaging module and power device packaging method |
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| Publication Number | Publication Date |
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| CN117712092A true CN117712092A (en) | 2024-03-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311629005.6A Pending CN117712092A (en) | 2023-11-28 | 2023-11-28 | Power device packaging module and power device packaging method |
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| Country | Link |
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| CN (1) | CN117712092A (en) |
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2023
- 2023-11-28 CN CN202311629005.6A patent/CN117712092A/en active Pending
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