CN117711974A - Die bonding apparatus and die bonding method - Google Patents

Die bonding apparatus and die bonding method Download PDF

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Publication number
CN117711974A
CN117711974A CN202310927939.1A CN202310927939A CN117711974A CN 117711974 A CN117711974 A CN 117711974A CN 202310927939 A CN202310927939 A CN 202310927939A CN 117711974 A CN117711974 A CN 117711974A
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China
Prior art keywords
die
bonding
unit
detection
inspection
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Chinese (zh)
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金昶振
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Semes Co Ltd
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Semes Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67271—Sorting devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Die Bonding (AREA)

Abstract

The present invention provides a die bonding apparatus and a die bonding method for picking up dies singulated from a wafer through a dicing process and bonding to a substrate for forming a semiconductor device, which may include: a bonding module composed of a pick-up unit picking up a die from a wafer bonded on a dicing tape and transferring to an intermediate stage, and an adhesive unit picking up the die transferred to the intermediate stage and bonding to a substrate; a detection unit configured to detect the die transferred to the intermediate stage by the pick-up unit; and a control unit that, based on the result of the alignment detection of the die by the detection unit, performs scheduling of a subsequent detection process of the die and driving of the bonding unit that bonds the die to the substrate, and applies a control signal to the detection unit and the bonding die block.

Description

Die bonding apparatus and die bonding method
Technical Field
The present invention relates to a die bonding apparatus and a die bonding method, and more particularly, to a die bonding apparatus and a die bonding method for picking up a die singulated by a dicing process from a wafer and bonding to a substrate in order to form a semiconductor device.
Background
In general, semiconductor devices are formed on a silicon wafer serving as a semiconductor substrate by repeatedly performing a series of manufacturing processes, and the semiconductor devices thus formed may be divided by a dicing process and bonded to the substrate by a die bonding process.
The conventional die bonding apparatus for performing the die bonding process may include: a wafer stage supporting a wafer divided into a plurality of dies; a substrate transfer unit for transferring a substrate to a bonding region adjacent to the wafer stage; a bonding module that picks up a plurality of dies and bonds to a substrate, and the like. An example of the die bonding apparatus as described above is disclosed in korean patent laid-open publication No. 10-0929197.
Such a die bonding apparatus operates in a two-step bonding method, which is a step in which a pick-up unit picks up a die from a wafer supported on a wafer stage and performs placement to an intermediate stage (die stage) and a step in which an adhesion unit picks up a die placed on the intermediate stage and performs bonding to a substrate supported on a substrate stage, whereby die processing between the pick-up unit and the adhesion unit can be realized on the intermediate stage.
At this time, the Die placed on the intermediate stage may be inspected for dies using Die Vision (Die Vision). For example, alignment detection is performed to confirm how much the die placed on the intermediate stage has changed from the set position, and the bonding unit corrects the position and guides at the time of picking up the die so as to pick up it correctly, and detection is performed as to whether the die is undivided or not and whether a crack has occurred or not, so that it is possible to determine whether the die can be operated.
Disclosure of Invention
Problems to be solved
However, in the conventional die bonding apparatus, after the alignment, non-division, and crack detection of the die mounted on the intermediate stage are completed, the bonding unit performs the operation for picking up the die, and thus there is a problem in that the Cycle Time of the die bonding process is increased in accordance with the Time required for the detection.
The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a die bonding apparatus and a die bonding method capable of shortening the time required for visual inspection of a die, thereby saving the cycle of a die bonding process. Such problems are merely illustrative and the scope of the present invention is not limited by these problems.
Means for solving the problems
According to an embodiment of the present invention, there is provided a die bonding apparatus including: a bonding module composed of a pick-up unit picking up a die from a wafer bonded on a dicing tape and transferring to an intermediate stage, and an adhesive unit picking up the die transferred to the intermediate stage and bonding to a substrate; a detection unit configured to detect the die transferred to the intermediate stage by the pick-up unit; and a control unit that, based on the result of the alignment detection of the die by the detection unit, performs scheduling of a subsequent detection process of the die and driving of the bonding unit that bonds the die to the substrate, and applies a control signal to the detection unit and the bonding die block.
According to an embodiment of the present invention, the control section includes an alignment detection control section that applies a control signal to the detection section so as to detect alignment of the die disposed at the intermediate stage.
According to an embodiment of the present invention, the control section further includes: a timing control section correcting a pickup position of the bonding unit that picks up the die placed on the intermediate stage, based on an alignment detection result of the alignment detection control section, and applying a control signal to the bonding unit to cause the bonding unit to perform driving for pickup of the die; and a monitor control section that determines whether or not a subsequent inspection process of the die is performed based on an alignment detection result of the alignment detection control section, and that applies a control signal to the detection section when it is determined that the subsequent inspection process of the die is to be performed.
According to an embodiment of the present invention, the timing control section includes: a horizontal/vertical drive control unit for controlling left-right drive in a horizontal direction (X-axis direction) and front-rear drive in a vertical direction (Y-axis direction) of the bonding unit; a lowering drive control unit that controls a lowering drive in a height direction (Z-axis direction) of the bonding unit; a pickup drive control unit that controls pickup of the die by the bonding unit; and a lifting drive control unit for controlling lifting drive of the bonding unit in the height direction.
According to an embodiment of the present invention, the monitoring control section includes: an undivided detection control unit configured to apply a control signal to the detection unit and detect whether the die placed on the intermediate stage is undivided; and a crack detection control unit that applies a control signal to the detection unit and detects whether or not a crack of the crystal grain placed on the intermediate stage has occurred.
According to an embodiment of the present invention, the control unit further includes a die discard reservation unit that receives a detection failure signal from a detection control unit in which a detection failure has occurred when a detection failure has occurred in any one of the alignment detection control unit, the undivided detection control unit, and the crack detection control unit, and generates a die discard signal for reserving discarding of the die.
According to an embodiment of the present invention, the control section is formed as follows:
when a defective inspection occurs in the alignment inspection control section, the defective inspection signal is generated by the alignment inspection control section, and only the timing control section for pickup driving of the die is started without starting the monitor control section for performing a subsequent inspection process of the die; when the inspection is qualified in the alignment inspection control part, the monitoring control part for performing the subsequent inspection process of the die and the timing control part for the pick-up driving of the die are started at the same time.
According to an embodiment of the present invention, the control section is formed as follows: when a detection failure occurs in the undivided detection control section of the monitor control section, a crack detection control section for detecting whether or not a crack of the crystal grain has occurred is not activated, and the detection failure signal is generated by the undivided detection control section; when a failure occurs in the crack detection control unit of the monitor control unit, the failure detection signal is generated by the crack detection control unit, and if the failure detection is detected in the crack detection control unit, a bonding operation reservation signal is generated by the crack detection control unit.
According to an embodiment of the present invention, the control section further includes: an operation judging part for determining whether the crystal grain is abandoned or bonded and generating abandoned signals or bonding signals of the crystal grain; and a die bonding control section that applies a control signal to the bonding unit so as to discard or bond the die to the substrate in accordance with the discard signal or the bonding signal of the operation determination section.
According to an embodiment of the present invention, the operation judgment section is formed as follows: the discard signal of the die is generated when the die discard reservation section receives the die discard signal, and the bonding signal of the die is generated when the bonding operation reservation signal is received from the crack detection control section.
According to another embodiment of the present invention, there is provided a die bonding method implemented by a die bonding apparatus including a bonding module composed of a pick-up unit that picks up a die from a wafer bonded on a dicing tape and transfers the die to an intermediate stage, and an adhesive unit that picks up the die transferred to the intermediate stage and bonds the die to a substrate, wherein the die bonding apparatus includes: an alignment detecting step (a) of detecting alignment of the die transferred to the intermediate stage by the pick-up unit; and a control step (b) of scheduling a subsequent inspection process of the die and driving of the bonding unit for bonding the die to the substrate based on the result of the alignment inspection of the die by the alignment inspection step.
According to another embodiment of the invention, the controlling step includes: a timing control step (b-1) of correcting a pickup position of the bonding unit that picks up the die placed on the intermediate stage, based on an alignment detection result of the alignment detection step, and controlling the bonding unit so that the bonding unit performs driving for pickup of the die; and a monitor control step (b-2) of determining whether or not a subsequent inspection process of the die is performed based on an alignment inspection result of the alignment inspection step, and controlling the subsequent inspection process when it is determined that the subsequent inspection process of the die is to be performed.
According to another embodiment of the present invention, the timing control step includes: a horizontal/vertical driving control step (b-1-1) of controlling left-right driving in a horizontal direction (X-axis direction) and front-rear driving in a vertical direction (Y-axis direction) of the bonding unit; a lowering drive control step (b-1-2) of controlling a lowering drive in a height direction (Z-axis direction) of the bonding unit; a pick-up driving control step (b-1-3) of controlling pick-up of the die of the bonding unit; and a step (b-1-4) of controlling the lifting drive of the bonding unit in the height direction.
According to another embodiment of the present invention, the monitoring control step includes: an undivided detection step (b-2-1) of detecting whether or not the die disposed on the intermediate stage is undivided; and a crack detection step (b-2-2) of detecting whether or not a crack of the crystal grain disposed in the intermediate stage has occurred.
According to another embodiment of the present invention, when a detection failure occurs in any one of the alignment detection step, the undivided detection step, and the crack detection step, a die discard signal reserving discarding of the die is generated in the detection step in which the detection failure occurs.
According to another embodiment of the present invention, the die discard signal is generated when a detection failure occurs in the alignment detection step, the monitor control step for performing a subsequent detection process of the die is not performed, and only the timing control step for pickup driving of the die is performed; and when the inspection is qualified in the alignment inspection step, the monitoring control step for performing the subsequent inspection process of the die and the timing control step for the pick-up driving of the die are simultaneously performed.
According to another embodiment of the present invention, when a detection failure occurs in the undivided detection step, a crack detection step for detecting whether or not a crack of the crystal grain occurs is not performed, and the crystal grain discard signal is generated; and generating the crystal grain discarding signal when the detection failure occurs in the crack detection step, and generating a bonding operation reservation signal if the detection is qualified in the crack detection step.
According to another embodiment of the present invention, further comprising: an operation judging step of determining whether the crystal grain is abandoned or bonded or not and generating abandoned signals or bonding signals of the crystal grain; and a die bonding control step of controlling the bonding unit so as to discard or bond the die to the substrate in accordance with the discard signal or the bonding signal of the operation judgment step.
According to another embodiment of the present invention, in the operation judging step, the discard signal of the die is generated if the die discard signal is generated in any one of the alignment detecting step, the undivided detecting step, and the crack detecting step, and the bonding signal of the die is generated if the bonding operation reservation signal is generated in the crack detecting step.
According to yet another embodiment of the present invention, a die bonding apparatus is provided. The die bonding apparatus includes: a bonding module composed of a pick-up unit picking up a die from a wafer bonded on a dicing tape and transferring to an intermediate stage, and an adhesive unit picking up the die transferred to the intermediate stage and bonding to a substrate; a detection unit configured to detect the die transferred to the intermediate stage by the pick-up unit; and a control unit configured to schedule a subsequent inspection step of the die and driving of the bonding means for bonding the die to the substrate, based on a result of the alignment inspection of the die by the inspection unit, and to apply a control signal to the inspection unit and the bonding die block; the control unit includes: an alignment detection control unit that applies a control signal to the detection unit to detect alignment of the die placed on the intermediate stage; a timing control section correcting a pickup position of the bonding unit that picks up the die placed on the intermediate stage, based on an alignment detection result of the alignment detection control section, and applying a control signal to the bonding unit to cause the bonding unit to perform driving for pickup of the die; and a monitor control section that determines whether or not a subsequent inspection process of the die is performed based on an alignment detection result of the alignment detection control section, and that applies a control signal to the detection section when it is determined that the subsequent inspection process of the die is to be performed; the timing control section includes: a horizontal/vertical drive control unit for controlling left-right drive in a horizontal direction (X-axis direction) and front-rear drive in a vertical direction (Y-axis direction) of the bonding unit; a lowering drive control unit that controls a lowering drive in a height direction (Z-axis direction) of the bonding unit; a pickup drive control unit that controls pickup of the die by the bonding unit; and a lifting drive control unit for controlling lifting drive of the bonding unit in the height direction; the monitoring control section includes: an undivided detection control unit configured to apply a control signal to the detection unit and detect whether the die placed on the intermediate stage is undivided; and a crack detection control unit that applies a control signal to the detection unit and detects whether or not a crack of the crystal grain placed on the intermediate stage has occurred; wherein the control part is formed as follows: when a defective inspection occurs in the alignment inspection control section, the defective inspection signal is generated by the alignment inspection control section, and only the timing control section for pickup driving of the die is started without starting the monitor control section for performing a subsequent inspection process of the die; when the inspection is qualified in the alignment inspection control part, the monitoring control part for performing the subsequent inspection process of the die and the timing control part for the pick-up driving of the die are started at the same time.
ADVANTAGEOUS EFFECTS OF INVENTION
According to an embodiment of the present invention configured as described above, after a die transferred from a pick-up unit to an intermediate stage is photographed by a die vision inspection unit, a subsequent inspection process (non-division inspection, crack inspection, etc.) of the die is performed based on the alignment inspection result of the die, and driving of an adhesion unit for picking up the die is performed at the same time, or the subsequent inspection process of the die is omitted, whereby the time required for die vision inspection can be shortened.
In addition, in the process of driving the bonding unit for picking up the die, the result of the alignment detection or the result of the subsequent detection process performed simultaneously with the driving of the bonding unit is obtained, so that whether the bonding operation or the discarding operation for the die is performed or not is reserved in advance in the driving of the bonding unit, and the bonding operation or the discarding operation for the die is performed immediately after the die is picked up by the bonding unit, thereby enabling the driving time of the bonding unit to be shortened.
As described above, by optimizing the inspection process of the die placed on the intermediate stage and the pick-up process by the bonding unit, it is possible to realize a die bonding apparatus and a die bonding method capable of saving the cycle of the die bonding process and improving the product production efficiency of the semiconductor device. Of course, the scope of the present invention is not limited by these effects.
Drawings
Fig. 1 is a conceptual diagram schematically illustrating a die bonding apparatus according to an embodiment of the present invention;
FIG. 2 is a block diagram illustrating one embodiment of a control portion of the die bonding apparatus of FIG. 1;
fig. 3 is a sequence diagram sequentially showing a die bonding method according to another embodiment of the present invention;
FIG. 4 is a sequence diagram showing more specifically the steps of the die bonding method of FIG. 3;
reference numerals illustrate:
10 a bonding unit; 11 a pick-up unit;
12 an adhesive unit; 13 mounting a frame;
14 an expansion ring; 15 holders;
16. a die ejector; a 17-camera;
20. a control unit; 21 an alignment detection control part;
22. a timing control unit; 22a horizontal/vertical drive control section;
22b lowering drive control unit; 22c pick-up drive control section;
22d an ascending drive control unit; 23a monitoring control part;
23a undivided detection control section; 23b crack detection control unit;
24. a die discard reservation section; 25 an operation judgment section;
26. a die bonding control unit; a 30 detection unit;
100. a die bonding device; t cutting the adhesive tape;
a W wafer; d, crystal grains;
s base plate; e a detection device;
WS wafer stage; an MS intermediate station;
SS substrate table.
Detailed Description
Hereinafter, some preferred embodiments of the present invention are described in detail with reference to the accompanying drawings.
The embodiments of the present invention are intended to more fully describe the present invention to those skilled in the art, and the following embodiments may be modified into several different forms, and the scope of the present invention is not limited to the following embodiments. Rather, these embodiments are intended to make this disclosure more faithful and complete, and to fully convey the concept of the invention to those skilled in the art. In addition, the thickness or size of each layer in the drawings is exaggerated for convenience and clarity of illustration.
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings schematically showing preferred embodiments of the present invention. Variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Therefore, embodiments of the inventive concept should not be construed as limited to the particular shapes of regions illustrated in this specification and, for example, should include shape variations resulting from fabrication.
Fig. 1 is a conceptual diagram schematically illustrating a die bonding apparatus 100 according to an embodiment of the present invention, and fig. 2 is a block diagram illustrating an embodiment of a control section 20 of the die bonding apparatus of fig. 1.
As shown in fig. 1, a die bonding apparatus 100 according to an embodiment of the present invention includes: the bonding module 10 is composed of a pickup unit 11 for picking up the die D from the wafer W adhered to the dicing tape T and transferring to the intermediate stage MS, and an adhesive unit 12 for picking up the die D transferred to the intermediate stage MS and bonding to the substrate S; a detection unit 30, which is provided above the intermediate stage MS, and which is a type of visual camera capable of capturing the crystal grain D transferred to the intermediate stage MS, and which is capable of visually detecting the crystal grain D transferred to the intermediate stage MS by the pickup unit 11; and a control unit 20 for scheduling the subsequent inspection process of the die D and the driving of the bonding unit 12 for bonding the die D to the substrate S based on the result of the alignment inspection of the die D by the inspection unit 30, and applying a control signal to the inspection unit 30 and the bonding die 10.
Here, the die bonding apparatus 100 according to an embodiment of the present invention is an apparatus used for manufacturing semiconductor devices in a stacked manner, and may be disposed behind a inspection apparatus E that electrically inspects a plurality of dies D of a wafer W by a probe card or the like and generates die class level information according to the operation performance.
More specifically, in the die bonding apparatus 100 according to an embodiment of the present invention, the wafer W singulated into the plurality of dies D through the dicing process may be supported on the substantially circular ring-shaped mounting frame 13 by the dicing tape T, the wafer W may be provided in a state of being stuck on the dicing tape T of the wafer stage WS for supporting the wafer W, on the wafer stage WS, an expanding ring 14 supporting an edge portion of the dicing tape T, a gripper 15 holding the mounting frame 13, a driving part (not shown) for moving the gripper 15 downward to expand the dicing tape T, and the like may be provided.
Further, a die ejector 16 separating the plurality of dies D on the dicing tape T from the dicing tape T may be disposed at a lower portion of the wafer stage WS, and a bonding die block 10 selectively picking up the plurality of dies D and bonding to the substrate S may be disposed at an upper portion of the wafer stage WS.
Here, the bonding die block 10 may include a pickup unit 11 capable of selectively picking up the die D from the wafer W and transferring to the intermediate stage MS, and a bonding unit 12 performing die bonding of the die D from the intermediate stage MS to the substrate S on the substrate stage SS.
Although not shown, the pickup unit 11 may include a lifting device for lifting the pickup head by driving a drive motor, a moving device for moving the pickup head forward, backward, leftward, and rightward, or the like, and the bonding unit 12 may include a lifting device for lifting the bonding head by driving a drive motor, a moving device for moving the pickup head forward, backward, leftward, and rightward, or the like.
However, such a bonding module 10 is not limited to the division of its functions into the pick-up unit 11 and the bonding unit 12, and for example, a single bonding module in which the intermediate stage MS is omitted and the functions of the pick-up unit 11 and the bonding unit 12 are doubled by one bonding module 10 may be applied.
Further, although not shown, the wafer stage WS may be moved in a horizontal direction for selective pickup of a plurality of dies D. That is, the wafer stage WS may be moved in a horizontal direction by a stage driving part (not shown) so that the die to be picked up is located at an upper portion of the die ejector 16. Meanwhile, a camera 17 for detecting the die to be picked up and confirming the position thereof may be disposed at the upper portion of the wafer stage WS.
Although one bonding die 10 has been described above, two or more bonding modules 10 may be provided to shorten the time required for the die bonding process and to perform the bonding process more efficiently. Meanwhile, a substrate supply unit for supplying the substrate S may be provided, and although not shown, the substrate supply unit may simultaneously supply first and second substrates, etc. different from each other.
For stacking of the Die D, a Die Attach Film (DAF) (not shown) may be provided on the lower surface of the Die D, for example, and the bonding Die block 10 may pick up the Die D in the scheduled setting order and bond the Die D to the substrate S on the substrate stage SS in a stacked manner.
Accordingly, as shown in fig. 1, the die D separated from the wafer W stuck on the dicing tape T of the wafer stage WS may be bonded to the substrate S such as the PCB on the substrate stage SS by the bonding module 10 including the pick-up unit 11 and the bonding unit 12 through the intermediate stage MS.
At this time, the die D placed on the intermediate stage MS may be detected by the detecting unit 30, and the detecting unit 30 may be configured to visually (Vi s ion) detect the die D by a camera.
For example, it is possible to confirm how much the die D placed on the intermediate stage MS is deviated from the set correct position by performing alignment detection of the die D by using the image of the die D captured by the detecting portion 30, and the bonding unit 12 corrects and guides the pick-up position at the time of picking up the die D so as to pick up it correctly, and performs detection as to whether the die D is undivided or whether a crack is generated or not, so that it is possible to judge whether the die D is operable, thereby discarding or bonding the die D to the substrate S.
The configuration of the control unit 20 for controlling the driving of the detecting unit 30 and the bonding unit 12 and applying a control signal will be described in further detail below, wherein the detecting unit 30 and the bonding unit 12 are used for detecting the die D mounted on the intermediate stage MS of the die bonding apparatus 100 via the pick-up unit 11 and performing the bonding process.
First, as shown in fig. 2, the control section 20 may include an alignment detection control section 21 that applies a control signal to the detection section 30 to thereby detect alignment of the die D placed on the intermediate stage MS.
The control unit 20 may further include: a timing control section 22 correcting a pickup position of the bonding unit 12 that picks up the die D placed on the intermediate stage MS based on the alignment detection result of the alignment detection control section 21, and applying a control signal to the bonding unit 12 so that the bonding unit 12 performs driving for pickup of the die D; and a monitor control section 23 for determining whether or not the subsequent inspection process of the die D is performed based on the result of the alignment inspection by the alignment inspection control section 21, and for applying a control signal to the inspection section 30 when the subsequent inspection process of the die D is determined to be performed.
More specifically, the timing control section 22 may include: a horizontal/vertical drive control unit 22a for controlling the horizontal (X-axis) drive and the vertical (Y-axis) drive of the bonding unit 12; a lowering drive control unit 22b that controls the lowering drive in the height direction (Z-axis direction) of the bonding unit 12; a pickup drive control unit 22c for controlling pickup of the die D of the bonding unit 12; and a lifting drive control unit 22d for controlling lifting drive of the bonding unit 12 in the height direction; further, the monitoring control section 23 may include: an undivided detection control unit 23a for applying a control signal to the detection unit 30 to detect whether or not the die D placed on the intermediate stage MS is undivided; and a crack detection control unit 23b for applying a control signal to the detection unit 30 to detect whether or not a crack is generated in the die D placed on the intermediate stage MS.
The timing control section 22 and the monitoring control section 23 of the control section 22 are driven selectively based on the alignment detection result of the alignment detection section 21.
For example, when a detection failure occurs in the alignment detection control section 21, the control section 20 may generate a detection failure signal by the alignment detection control section 21, and may start only the timing control section 22 for pickup driving of the die D without starting the monitor control section 23 for performing the subsequent inspection process of the die D.
In contrast, when the inspection pass occurs in the alignment inspection control section 21, the monitor control section 23 for performing the subsequent inspection process of the die D and the timing control section 22 for the pickup drive of the die D are simultaneously started.
When the detection is passed in the alignment detection control unit 21 and the monitoring control unit 23 is started, the undivided detection control unit 23a and the crack detection control unit 23b of the monitoring control unit 23 may be sequentially started as the subsequent detection process proceeds.
At this time, when a detection failure occurs in the undivided detection control section 23a, the detection failure signal may be generated by the undivided detection control section 23a without activating the crack detection control section 23b for detecting the occurrence or non-occurrence of cracks in the crystal grain D; then, when the crack detection control unit 23b is started up without the occurrence of the detection pass in the divided detection control unit 23a, the defective detection signal may be generated by the crack detection control unit 23b, and when the detection pass finally occurs in the crack detection control unit 23b, the bonding operation reservation signal may be generated by the crack detection control unit 23b.
Here, the example in which the subsequent detection process is performed in the order of the undivided detection control section 23a and the crack detection control section 23b when the monitoring control section 23 is activated has been given, but the present invention is not limited thereto, and the subsequent detection process may be performed in the order of the crack detection control section 23b and the undivided detection control section 23 a.
The control unit 20 may further include: a die discard reservation unit 24 that, when a detection failure (NG) occurs in any one of the alignment detection control unit 21, the undivided detection control unit 23a, and the crack detection control unit 23b, receives the detection failure signal from the detection control unit in which the detection failure has occurred, and generates a die discard signal for reserving discard (Dump) of the die D; an operation determination unit 25 for determining whether or not the die D is discarded or bonded, and generating a discard signal or a bonding signal of the die D; and a die bonding control section 26 that applies a control signal to the bonding unit 12 so as to discard or bond the die D to the substrate S in accordance with the discard signal or the bonding signal of the operation determination section 25.
With this, the operation determination section 25 is formed as follows: when the timing control section 22 for pickup driving of the die D is started (at this time, the monitor control section 23 for performing the subsequent inspection process of the die D is selectively started together with the timing control section 22 according to the inspection result of the alignment inspection control section 21), the discard signal of the die D is generated when the die discard reservation section 24 receives the discard signal, so that the die bonding control section 26 can apply the control signal of the discard die D to the bonding unit 12; when the bonding operation reservation signal is received from the crack detection control section 23b, the bonding signal is generated, so that the die bonding control section 26 can apply a control signal of bonding the die D to the bonding unit 12.
Therefore, according to the die bonding apparatus 100 of an embodiment of the present invention, after the die D transferred from the pick-up unit 11 to the intermediate stage MS is photographed by the inspection portion 30 for die vision, the subsequent inspection process (non-division inspection, crack inspection, etc.) of the die is performed based on the alignment inspection result of the die D, and the driving of the bonding unit for picking up the die is performed at the same time, or the subsequent inspection process of the die is omitted, so that the time required for die vision inspection can be shortened.
Further, in the process of driving the bonding unit 12 for picking up the die D, the result of the alignment detection or the result of the subsequent detection process performed simultaneously with the driving of the bonding unit 12 is acquired, so that whether or not the bonding operation or the discarding operation for the die D is performed is reserved in advance in the driving of the bonding unit 12, the bonding operation or the discarding operation for the die D can be performed immediately after the die D is picked up by the bonding unit 12, and the driving time of the bonding unit 12 can be shortened.
Therefore, the inspection process of the die D placed on the intermediate stage MS and the pick-up process by the bonding unit 12 are optimized, thereby saving the cycle of the die bonding process and improving the production efficiency of the semiconductor device.
Hereinafter, a die bonding method using the die bonding apparatus 100 will be described in detail.
Fig. 3 is a sequence diagram sequentially showing a die bonding method according to another embodiment of the present invention, and fig. 4 is a sequence diagram more specifically showing steps of the die bonding method in fig. 3.
As shown in fig. 3, a die bonding method according to another embodiment of the present invention is implemented by a die bonding apparatus 100, the die bonding apparatus 100 including a bonding die block 10 composed of a pick-up unit 11 picking up a die D from a wafer W bonded on a dicing tape T and transferring to a stage MS, and an adhesive unit 12 picking up the die D transferred to the stage MS and bonding to a substrate S, wherein: an alignment detecting step (a) of detecting alignment of the die D transferred to the intermediate stage MS by the pick-up unit 11; and a control step (b) of scheduling the subsequent inspection process of the die D and the driving of the bonding unit 12 for bonding the die D to the substrate S based on the result of the alignment inspection of the die D by the alignment inspection step (a).
For example, the alignment detecting step (a) may be a step of detecting the alignment of the die D to be able to confirm how much the die D transferred from the wafer W by the pick-up unit 11 and placed on the intermediate stage MS is deviated from the set correct position, thereby correcting the pick-up position when the bonding unit 12 picks up the die D, thereby correct pick-up.
Further, the control step (b) may be performed roughly in two steps: a timing control step (b-1) of correcting a pickup position of the bonding unit 12 picking up the die D placed on the intermediate stage MS based on the alignment detection result of the alignment detection step (a), and controlling the bonding unit 12 so that the bonding unit 12 performs driving for pickup of the die D; and a monitor control step (b-2) of determining whether or not the subsequent inspection process of the die D is performed based on the alignment inspection result of the alignment inspection step (a), and controlling the subsequent inspection process when it is determined that the subsequent inspection process of the die D is to be performed.
More specifically, as shown in fig. 4, the timing control step (b-1) includes: a horizontal/vertical driving control step (b-1-1) of controlling left-right driving in the horizontal direction (X-axis direction) and front-rear driving in the vertical direction (Y-axis direction) of the bonding unit 12; a lowering drive control step (b-1-2) of controlling a lowering drive in the height direction (Z-axis direction) of the bonding unit 12; a pickup drive control step (b-1-3) of controlling pickup of the die D of the bonding unit 12; and a rising drive control step (b-1-4) of controlling the rising drive of the bonding unit 12 in the height direction so as to control the bonding unit 12 in such a manner that the drive for picking up the die D is enabled.
Further, the monitoring control step (b-2) includes: an undivided detection step (b-2-1) of detecting whether or not the die D mounted on the intermediate stage MS is undivided; and a crack detection step (b-2-2) for detecting whether or not a crack of the die D mounted on the intermediate stage MS has occurred, thereby enabling control of a subsequent detection process of the die D.
Wherein the timing control step (b-1) is performed after the alignment detecting step (a) for pickup driving of the die D by the bonding unit 12 and is independent of the detection result of the alignment detecting step (a), and the monitor control step (b-2) is performed selectively after the alignment detecting step (a) according to the detection result of the alignment detecting step (a) and may be performed simultaneously with the timing control step (b-1) when the steps are performed.
For example, as shown in fig. 4, when a defective inspection occurs in the alignment inspection step (a), a die discard signal is generated, and the monitoring control step (b-2) for performing the subsequent inspection step of the die D is not performed, but only the timing control step (b-1) for the pick-up driving of the die D is performed; when the inspection pass occurs in the alignment inspection step (a), a monitor control step (b-2) for performing the subsequent inspection process of the die (D) and a timing control step (b-1) for pickup driving of the die (D) are simultaneously performed.
In this way, when the detection pass occurs in the alignment detection step (a) and the monitoring control step (b-2) is performed together with the timing control step (b-1), the undivided detection step (b-2-1) and the crack detection step (b-2-2) may be sequentially performed as the subsequent detection steps.
At this time, as shown in fig. 4, when the defective detection occurs in the undivided detection step (b-2-1), the crack detection step (b-2-2) for detecting whether or not the crack of the die (D) occurs may not be performed, and the die discard signal may be generated; the die-off signal may be generated when a defective inspection occurs in the crack inspection step (b-2-2), and a bonding operation reservation signal may be generated if the inspection is finally qualified in the crack inspection step (b-2-2).
Here, although an example is given in which the subsequent detection process is performed in the order of the undivided detection step (b-2-1) and the crack detection step (b-2-2) when the monitoring control step (b-2) is performed, the subsequent detection process is not limited to this, and may be performed in the order of the crack detection step (b-2-2) and the undivided detection step (b-2-1).
Next, as shown in fig. 4, the die bonding method may implement the following steps: an operation judging step (c) for determining whether the die D is abandoned or bonded, and generating a abandoned signal or bonding signal of the die D; and a die bonding control step (D) of controlling the bonding unit 12 so as to discard or bond the die D to the substrate (S) in accordance with the discard signal or the bonding signal of the operation judgment step (c).
For example, when a defective inspection occurs in any one of the alignment inspection step (a), the undivided inspection step (b-2-1) and the crack inspection step (b-2-2), the inspection operation reservation signal may be generated if the inspection operation reservation signal is generated in the defective inspection step and the discard of the die D is reserved, and the inspection is not performed until the crack inspection step (b-2-2) is accepted.
Thus, as shown in fig. 4, in the operation determination step (c), if the die-out signal is generated in any one of the alignment detection step (a), the undivided detection step (b-2-1), and the crack detection step (b-2-2), the die-out signal of the die D is generated, and the bonding means 12 is controlled so as to discard the die D in the die-bonding control step (D); if the bonding operation reservation signal is generated in the crack detection step (b-2-2), the bonding signal of the die D is generated, so that the bonding unit 12 can be controlled in such a manner that the die D is bonded to the substrate S in the die bonding control step (D).
Next, while the die bonding process is continued, the alignment inspection step (a) is repeatedly performed again for another die picked up from the wafer W attached to the dicing tape T by the pick-up unit 11 and placed on the intermediate stage MS. At this time, the process of picking up the further die by the pick-up unit 11 and transferring to the intermediate stage MS is performed simultaneously with the control step (b) including the timing control step (b-1) and the monitor control step (b-2), the operation judgment step (c), and the die bonding control step (d), so that the engineering time for the bonding process of the next die can be saved.
Thus, according to the die bonding method of another embodiment of the present invention, after the die D transferred from the pick-up unit 11 to the intermediate stage MS is photographed by the inspection portion 30 for die vision, the subsequent inspection process (non-division inspection, crack inspection, etc.) of the die D is performed based on the alignment inspection result of the die D and the driving of the bonding unit for picking up the die D is performed at the same time, or the subsequent inspection process of the die D is omitted, so that the time required for die vision inspection can be shortened.
In addition, in the process of driving the bonding unit 12 for picking up the die D, the result of the alignment detection or the result of the subsequent detection process performed simultaneously with the driving of the bonding unit 12 is acquired, so that the bonding operation or discarding operation for the die D is reserved in advance in the driving of the bonding unit 12 or not, and the bonding operation or discarding operation for the die D is performed immediately after the die D is picked up by the bonding unit 12, whereby the driving time of the bonding unit 12 can be shortened.
Therefore, by optimizing the inspection process of the die D placed on the intermediate stage MS and the pick-up process by the bonding unit 12, the cycle of the die bonding process can be saved and the product production efficiency of the semiconductor device can be improved.
The embodiments shown in the figures are described with reference to the present invention, but this is only an example, and it is understood that many variations and equivalent other embodiments can be made by those skilled in the art. Therefore, the true technical scope of the present invention should be determined according to the technical ideas of the appended claims.

Claims (20)

1. A die bonding apparatus, comprising:
a bonding module composed of a pick-up unit picking up a die from a wafer bonded on a dicing tape and transferring to an intermediate stage, and an adhesive unit picking up the die transferred to the intermediate stage and bonding to a substrate;
a detection unit configured to detect the die transferred to the intermediate stage by the pick-up unit; and
and a control unit configured to schedule a subsequent inspection step of the die and driving of the bonding unit for bonding the die to the substrate, based on a result of the alignment inspection of the die by the inspection unit, and to apply a control signal to the inspection unit and the bonding die block.
2. The die bonding apparatus of claim 1, wherein,
the control section includes an alignment detection control section that applies a control signal to the detection section to thereby detect alignment of the die disposed at the intermediate stage.
3. The die bonding apparatus of claim 2, wherein,
the control section further includes:
a timing control section correcting a pickup position of the bonding unit that picks up the die placed on the intermediate stage, based on an alignment detection result of the alignment detection control section, and applying a control signal to the bonding unit to cause the bonding unit to perform driving for pickup of the die; and
and a monitor control unit for determining whether or not a subsequent inspection process of the die is performed based on the result of the alignment inspection by the alignment inspection control unit, and for applying a control signal to the inspection unit when it is determined that the subsequent inspection process of the die is to be performed.
4. The die bonding apparatus of claim 3, wherein,
the timing control section includes:
a horizontal/vertical drive control unit for controlling left-right drive in a horizontal direction (X-axis direction) and front-rear drive in a vertical direction (Y-axis direction) of the bonding unit;
a lowering drive control unit that controls a lowering drive in a height direction (Z-axis direction) of the bonding unit;
a pickup drive control unit that controls pickup of the die by the bonding unit; and
And a lifting drive control unit for controlling lifting drive of the bonding unit in the height direction.
5. The die bonding apparatus of claim 4, wherein,
the monitoring control section includes:
an undivided detection control unit configured to apply a control signal to the detection unit and detect whether the die placed on the intermediate stage is undivided; and
and a crack detection control unit that applies a control signal to the detection unit and detects whether or not a crack of the crystal grain placed on the intermediate stage has occurred.
6. The die bonding apparatus of claim 5, wherein,
the control unit further includes a die discard reservation unit that receives a detection failure signal from a detection control unit in which a detection failure has occurred when a detection failure has occurred in any one of the alignment detection control unit, the undivided detection control unit, and the crack detection control unit, and generates a die discard signal for reserving die discard.
7. The die bonding apparatus of claim 6, wherein,
the control unit is formed as follows:
When a defective inspection occurs in the alignment inspection control section, the defective inspection signal is generated by the alignment inspection control section, and only the timing control section for pickup driving of the die is started without starting the monitor control section for performing a subsequent inspection process of the die;
when the inspection is qualified in the alignment inspection control part, the monitoring control part for performing the subsequent inspection process of the die and the timing control part for the pick-up driving of the die are started at the same time.
8. The die bonding apparatus of claim 7, wherein,
the control unit is formed as follows:
when a detection failure occurs in the undivided detection control section of the monitor control section, a crack detection control section for detecting whether or not a crack of the crystal grain has occurred is not activated, and the detection failure signal is generated by the undivided detection control section;
when a failure occurs in the crack detection control unit of the monitor control unit, the failure detection signal is generated by the crack detection control unit, and if the failure detection is detected in the crack detection control unit, a bonding operation reservation signal is generated by the crack detection control unit.
9. The die bonding apparatus of claim 8, wherein,
the control section further includes:
an operation judging part for determining whether the crystal grain is abandoned or bonded and generating abandoned signals or bonding signals of the crystal grain; and
and a die bonding control unit that applies a control signal to the bonding unit so as to discard or bond the die to the substrate in accordance with the discard signal or the bonding signal of the operation determination unit.
10. The die bonding apparatus of claim 9, wherein,
the operation judgment section is formed as follows:
the discard signal of the die is generated when the die discard reservation section receives the die discard signal, and the bonding signal of the die is generated when the bonding operation reservation signal is received from the crack detection control section.
11. A die bonding method performed by a die bonding apparatus including a bonding module constituted by a pick-up unit that picks up a die from a wafer bonded on a dicing tape and transfers the die to an intermediate stage, and an adhesive unit that picks up the die transferred to the intermediate stage and bonds the die to a substrate, characterized by comprising:
An alignment detecting step (a) of detecting alignment of the die transferred to the intermediate stage by the pick-up unit; and
and a control step (b) of scheduling a subsequent inspection step of the die and driving of the bonding unit for bonding the die to the substrate, based on the result of the alignment inspection of the die by the alignment inspection step.
12. The die bonding method according to claim 11, wherein,
the control step includes:
a timing control step (b-1) of correcting a pickup position of the bonding unit that picks up the die placed on the intermediate stage, based on an alignment detection result of the alignment detection step, and controlling the bonding unit so that the bonding unit performs driving for pickup of the die; and
and a monitor control step (b-2) of determining whether or not a subsequent inspection process of the die is performed based on the alignment inspection result of the alignment inspection step, and controlling the subsequent inspection process when it is determined that the subsequent inspection process of the die is to be performed.
13. The die bonding method according to claim 12, wherein,
the timing control step includes:
A horizontal/vertical driving control step (b-1-1) of controlling left-right driving in a horizontal direction (X-axis direction) and front-rear driving in a vertical direction (Y-axis direction) of the bonding unit;
a lowering drive control step (b-1-2) of controlling a lowering drive in a height direction (Z-axis direction) of the bonding unit;
a pick-up driving control step (b-1-3) of controlling pick-up of the die of the bonding unit; and
and a step (b-1-4) of controlling the lifting drive of the bonding unit in the height direction.
14. The die bonding method according to claim 13, wherein,
the monitoring control step comprises the following steps:
an undivided detection step (b-2-1) of detecting whether or not the die disposed on the intermediate stage is undivided; and
and (b-2-2) detecting whether or not a crack of the crystal grain disposed on the intermediate stage has occurred.
15. The die bonding method according to claim 14, wherein,
when a defective inspection occurs in any one of the alignment inspection step, the undivided inspection step, and the crack inspection step, a die discard signal is generated to reserve discarding of the die in the defective inspection step.
16. The die bonding method according to claim 15, wherein,
when a defective inspection occurs in the alignment inspection step, the die discard signal is generated, and the monitoring control step for performing a subsequent inspection process of the die is not performed, but only the timing control step for pickup driving of the die is performed;
and when the inspection is qualified in the alignment inspection step, the monitoring control step for performing the subsequent inspection process of the die and the timing control step for the pick-up driving of the die are simultaneously performed.
17. The die bonding method according to claim 16, wherein,
when a detection failure occurs in the undivided detection step, a crack detection step for detecting whether or not a crack of the crystal grain occurs is not performed, and the crystal grain discard signal is generated;
and generating the crystal grain discarding signal when the detection failure occurs in the crack detection step, and generating a bonding operation reservation signal if the detection is qualified in the crack detection step.
18. The die bonding method according to claim 17, wherein,
further comprises:
An operation judging step of determining whether the crystal grain is abandoned or bonded or not and generating abandoned signals or bonding signals of the crystal grain; and
and a die bonding control step of controlling the bonding unit so as to discard or bond the die to the substrate in accordance with the discard signal or the bonding signal of the operation determination step.
19. The die bonding method according to claim 18, wherein,
in the operation judgment step, in the above-described operation judgment step,
the discard signal of the die is generated if the die discard signal is generated in any one of the alignment detection step, the undivided detection step, and the crack detection step, and the bonding signal of the die is generated if the bonding operation reservation signal is generated in the crack detection step.
20. A die bonding apparatus, comprising:
a bonding module composed of a pick-up unit picking up a die from a wafer bonded on a dicing tape and transferring to an intermediate stage, and an adhesive unit picking up the die transferred to the intermediate stage and bonding to a substrate;
a detection unit configured to detect the die transferred to the intermediate stage by the pick-up unit; and
A control unit configured to schedule a subsequent inspection step of the die and driving of the bonding means for bonding the die to the substrate, based on a result of the alignment inspection of the die by the inspection unit, and to apply a control signal to the inspection unit and the bonding die block;
the control unit includes:
an alignment detection control unit that applies a control signal to the detection unit to detect alignment of the die placed on the intermediate stage;
a timing control section correcting a pickup position of the bonding unit that picks up the die placed on the intermediate stage, based on an alignment detection result of the alignment detection control section, and applying a control signal to the bonding unit to cause the bonding unit to perform driving for pickup of the die; and
a monitor control section that determines whether or not a subsequent inspection process of the die is performed based on an alignment detection result of the alignment detection control section, and that applies a control signal to the detection section when it is determined that the subsequent inspection process of the die is to be performed;
the timing control section includes:
a horizontal/vertical drive control unit for controlling left-right drive in a horizontal direction (X-axis direction) and front-rear drive in a vertical direction (Y-axis direction) of the bonding unit;
A lowering drive control unit that controls a lowering drive in a height direction (Z-axis direction) of the bonding unit;
a pickup drive control unit that controls pickup of the die by the bonding unit; and
a lifting drive control unit for controlling lifting drive of the bonding unit in the height direction;
the monitoring control section includes:
an undivided detection control unit configured to apply a control signal to the detection unit and detect whether the die placed on the intermediate stage is undivided; and
a crack detection control unit that applies a control signal to the detection unit and detects whether or not a crack of the crystal grain placed on the intermediate stage has occurred;
wherein the control part is formed as follows:
when a defective inspection occurs in the alignment inspection control section, the defective inspection signal is generated by the alignment inspection control section, and only the timing control section for pickup driving of the die is started without starting the monitor control section for performing a subsequent inspection process of the die;
when the inspection is qualified in the alignment inspection control part, the monitoring control part for performing the subsequent inspection process of the die and the timing control part for the pick-up driving of the die are started at the same time.
CN202310927939.1A 2022-09-14 2023-07-26 Die bonding apparatus and die bonding method Pending CN117711974A (en)

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