CN117706342A - Non-contact LED detection device and method with coupling gain structure - Google Patents
Non-contact LED detection device and method with coupling gain structure Download PDFInfo
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- CN117706342A CN117706342A CN202311511942.1A CN202311511942A CN117706342A CN 117706342 A CN117706342 A CN 117706342A CN 202311511942 A CN202311511942 A CN 202311511942A CN 117706342 A CN117706342 A CN 117706342A
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Abstract
The application discloses a non-contact LED detection device with a coupling gain structure and a method thereof, wherein the device comprises a lower substrate, a lower support layer and a lower conductive layer which are sequentially arranged from bottom to top, wherein the lower conductive layer is provided with an LED chip to be detected; the upper substrate is arranged above the lower substrate and comprises a gain lens, an upper supporting layer and an upper conducting layer which are sequentially arranged from top to bottom, wherein the upper supporting layer and the upper conducting layer are made of transparent materials; the coupling medium is arranged between the lower substrate and the upper substrate, and wraps the LED chip; the power supply component is respectively connected with the lower conductive layer and the upper conductive layer; the electric signal detection component is used for detecting electric signal information of the LED chip; the optical signal detection part is used for detecting optical signal information of the LED chip. The high-dielectric-constant coupling medium is added to enhance the capacitance effect and improve the current injection efficiency.
Description
Technical Field
The application relates to the technical field of LED detection, in particular to a non-contact LED detection device and method with a coupling gain structure.
Background
At present, although non-contact electroluminescence detection of single and array LED chips is realized, the miniature LEDs have small luminous area, and extremely high requirements on the traditional photoelectric test instrument are met. And the problem that the test accuracy is reduced or even the test cannot be performed is unavoidable due to the influence of low luminous intensity. Meanwhile, in the existing non-contact detection, most of the non-contact detection uses air as a coupling medium, the current injection efficiency is low, the electrode plates are required to apply higher voltage to drive, and the driving conditions are severe.
Disclosure of Invention
The object of the present application is to solve at least one of the technical problems existing in the prior art. Therefore, the application provides the non-contact LED detection device with the coupling gain structure, which can improve the sensitivity and accuracy of non-contact LED test, can also enhance the capacitance effect, improves the efficiency of current injection, and is beneficial to improving the use reliability of a detection chip.
The application also provides a non-contact LED detection method with the coupling gain structure.
A non-contact LED detection device with coupling gain structure according to an embodiment of the first aspect of the present application, comprising:
the LED device comprises a lower substrate, a lower substrate and a lower substrate, wherein the lower substrate comprises a lower supporting layer and a lower conductive layer which are sequentially arranged from bottom to top, and the lower conductive layer is used for arranging an LED chip to be detected;
the upper substrate is arranged above the lower substrate and comprises a gain lens, an upper supporting layer and an upper conducting layer which are sequentially arranged from top to bottom, wherein the upper supporting layer and the upper conducting layer are made of transparent materials;
the coupling medium is arranged between the lower substrate and the upper substrate and is used for wrapping the LED chip;
the power supply component is respectively connected with the lower conductive layer and the upper conductive layer and forms a loop;
the electric signal detection component is arranged in the loop in series and is used for detecting electric signal information of the LED chip;
and the optical signal detection component is matched with the gain lens and is used for detecting optical signal information of the LED chip.
The non-contact LED detection device with the coupling gain structure according to the embodiment of the first aspect of the application has at least the following beneficial effects: the high coupling medium and the gain lens enhance the convergence effect on the light of the micro LED chip, improve the detection capability of the light signal detection part on weak light of the small-size micro LED chip, improve the sensitivity and accuracy of the detection of the LED chip, and overcome the defects of low spatial spectral energy density and weak spectral signal of the small-size micro LED chip, which lead to low detection accuracy of the traditional photoelectric detection instrument. Meanwhile, a coupling medium with high dielectric constant is added between the electrode plate and the LED chip, so that the capacitance effect can be enhanced, the current injection efficiency is improved, the LED chip is sealed, and the chip is protected from being damaged by the outside. On the basis of the advantages, the advantages of the traditional non-contact detection are inherited, the damage of the probe to the LED chip in the traditional LED chip detection process is avoided, the use reliability of the detection chip is improved, and the practical service life of the LED chip is prolonged.
According to an embodiment of the first aspect of the present application, the non-contact LED detection device with the coupling gain structure further includes a displacement device, where the displacement device is configured to drive the upper substrate or the lower substrate to move, so that the upper conductive layer faces the LED chip, and a preset vertical distance is controlled between a lower surface of the upper substrate and an upper surface of the chip.
According to the non-contact LED detection device with the coupling gain structure, the precision of the displacement device is in the range of 1-10 μm, and the degree of freedom of adjustment of the displacement device at least comprises one or more of X-axis movement, Y-axis movement, Z-axis movement and Z-axis rotation.
According to the non-contact LED detection device with the coupling gain structure, the electric signal detection component comprises a brightness meter, a spectrometer, a light intensity meter, a silicon diode, a CCD sensor, an industrial camera, a lens group and an optical fiber which are electrically connected to form a system.
According to the non-contact LED detection device with the coupling gain structure, the optical signal detection component comprises a high-precision source meter, an alternating current meter and an oscilloscope which are electrically connected to form a system.
According to the non-contact LED detection device with the coupling gain structure in the first aspect of the present application, the power supply unit includes a function generator, a power amplifier and a high-precision source meter electrically connected to form a system, so that the voltage waveform output by the power supply unit is one or more of a sine wave, a square wave, a pulse, a sawtooth wave or a gaussian wave.
According to the non-contact LED detection device with the coupling gain structure, the coupling medium comprises one or more high-dielectric-constant insulating liquid dielectrics of deionized water, ethanol, methanol and glycerin.
According to the non-contact LED detection device with the coupling gain structure disclosed by the embodiment of the first aspect of the application, the filling mode of the coupling medium is a priming method or an immersion method.
According to the non-contact LED detection device with the coupling gain structure, the gain lens is one lens or a lens group composed of a plurality of lenses, and the minimum unit of the gain lens is a plano-convex lens, a biconvex lens, an optimal shape lens, an aspheric lens or a biconic lens.
According to a second aspect of the present application, a method for detecting a non-contact LED with a coupling gain structure includes the following steps:
s1: placing an LED chip to be tested on the upper surface of the lower substrate;
s2: filling a coupling medium into a gap between the upper substrate and the lower substrate, and covering the upper surface of the LED chip to enable the chip to be completely located in the environment of the coupling medium;
s3: the lower substrate or the upper substrate is moved to enable the upper conductive layer to be opposite to the LED chip, and a preset vertical distance is controlled between the lower surface of the upper substrate and the upper surface of the chip, so that a coupling medium is filled between the lower surface of the upper substrate and the upper surface of the chip;
s4: the power supply part applies an electric signal with a proper waveform between the upper substrate and the lower substrate to drive the LED chip to emit light in a non-contact manner; meanwhile, the electric signal detection part records the luminous information of the LED chip, and the optical signal detection part records the luminous information of the LED chip;
s5: after the optical signal detection part and the electric signal detection part are recorded, the power supply part stops supplying power;
s6: and repeating the steps S3-S5 until all the LED chips are detected.
It will be appreciated that the method for detecting a non-contact LED with a coupling gain structure in the second embodiment of the present application has the technical effects of the non-contact LED detection device with a coupling gain structure in the first embodiment as described above, and thus will not be described in detail.
Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
The present application is further described below with reference to the drawings and examples;
FIG. 1 is a schematic cross-sectional view of an embodiment of the present application;
FIG. 2 is a top view of an embodiment of the present application;
FIG. 3 is a schematic diagram of a moving lower substrate of a displacement device according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram of a filling mode of coupling medium according to an embodiment of the present application;
fig. 5 is a schematic diagram of detecting multiple LED chips, a gain lens being a single lens, and a coupling medium filling mode being immersion in the embodiment of the present application;
fig. 6 is a schematic diagram of detecting a plurality of LED chips, a gain lens being a plurality of lenses, and a coupling medium filling mode being an priming method in the embodiment of the present application.
Reference numerals:
101. an upper conductive layer; 102. an upper support layer; 103. a gain lens;
201. a lower support layer; 202. a lower conductive layer; 203. an LED chip; 204. a coupling medium; 205. a lower insulating layer; 206. a miniature dropper;
301. a power supply part;
401. an electric signal detection section;
501. an optical signal detecting section.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.
In the description of the present application, it should be understood that references to orientation descriptions, such as directions of up, down, front, back, left, right, etc., are based on the orientation or positional relationship shown in the drawings, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the apparatus or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application.
In the description of the present application, the meaning of several is one or more, the meaning of a plurality is at least two, greater than, less than, exceeding, etc. is understood to not include the present number, and above, below, within, etc. is understood to include the present number. The description of the first and second is for the purpose of distinguishing between technical features only and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present application, unless explicitly defined otherwise, terms such as arrangement, installation, connection, etc. should be construed broadly and the specific meaning of the terms in the present application can be reasonably determined by a person skilled in the art after combining the specific contents of the technical solutions.
Referring to fig. 1 to 6, a non-contact LED detection device with a coupling gain structure according to an embodiment of the first aspect of the present application is applied to LED non-contact electroluminescent detection, and the non-contact LED detection device with a coupling gain structure includes a lower substrate, an upper substrate, a coupling medium 204, a power supply part 301, an electrical signal detection part 401, and an optical signal detection part 501.
The lower substrate comprises a lower supporting layer 201 and a lower conductive layer 202 which are sequentially arranged from bottom to top, wherein the lower conductive layer 202 is used for arranging an LED chip 203 to be detected; the upper substrate is arranged above the lower substrate, and comprises a gain lens 103, an upper supporting layer 102 and an upper conductive layer 101 which are sequentially arranged from top to bottom, wherein the upper supporting layer 102 and the upper conductive layer 101 are made of transparent materials; the coupling medium 204 is arranged between the lower substrate and the upper substrate, and the coupling medium 204 is used for wrapping the LED chip 203; the power supply part 301 connects the lower conductive layer 202 and the upper conductive layer 101, respectively, and forms a loop; the electric signal detection part 401 is arranged in series in the loop, and the electric signal detection part 401 is used for detecting electric signal information of the LED chip 203; the optical signal detecting section 501 is provided in cooperation with the gain lens 103 and detects optical signal information of the LED chip 203.
Referring to fig. 1 to 6, in the non-contact LED detection device with a coupling gain structure according to the first aspect of the present application, the converging effect of the light of the micro LED chip 203 is enhanced by the high coupling medium 204 and the gain lens 103, so as to improve the detectability of the light signal detection component 501 to weak light of the small-size micro LED chip 203, improve the sensitivity and accuracy of the detection of the LED chip 203, and overcome the disadvantages of low spatial spectral energy density and weak spectral signal of the small-size micro LED chip 203, which results in low detection accuracy of the conventional photoelectric detection instrument. Meanwhile, the coupling medium 204 with high dielectric constant is added between the electrode plate and the LED chip 203, so that the capacitance effect can be enhanced, the current injection efficiency can be improved, the LED chip 203 can be sealed, and the chip can be protected from being damaged by the outside. Based on the advantages, the advantages of the traditional non-contact detection are inherited, the damage of the probe to the LED chip 203 in the traditional detection process of the LED chip 203 is avoided, the use reliability of the detection chip is improved, and the practical service life of the LED chip 203 is prolonged.
It is understood that the lower substrate is used for carrying the LED chip 203, and the upper substrate is located directly above the LED chip 203 and is not in contact with the LED chip 203 under test. The coupling medium 204 is used to improve the efficiency of injecting external current into the LED chip 203 and enhance the light extraction efficiency of the chip, and is located in the gap between the upper and lower substrates. The gain lens 103 is for increasing the central luminous intensity of the LED chip 203, is located on the upper surface of the upper substrate, and is located directly below the optical signal detecting section 501.
It should be noted that the lower substrate includes at least two layers, the lower layer is the lower supporting layer 201, and the upper layer is the lower conductive layer 202; materials of the lower conductive layer 202 include, but are not limited to, copper, gold, tin, ITO, etc.; in order to make the LED chip 203 in a uniform electric field, the area of the lower conductive layer 202 is greater than or equal to the area of the LED chip 203; when detecting the LED chip 203, the LED chip 203 is placed on the upper surface of the lower substrate. Further, the upper substrate comprises at least two layers, the upper layer is an upper supporting layer 102, and the lower layer is an upper conductive layer 101; the upper support layer 102 is made of a transparent material such as glass, PVDF, or the like; the upper conductive layer 101 is made of a transparent and conductive material such as ITO or the like; the transmittance of the upper substrate to light in the light emitting wavelength range of the LED chip 203 should be more than 50%; the area of the upper conductive layer 101 is not larger than the chip area.
In some embodiments of the present application, the device further includes a displacement device, where the displacement device is used to drive the upper substrate or the lower substrate to move, so that the upper conductive layer 101 faces the LED chip 203, and a preset vertical distance is controlled between the lower surface of the upper substrate and the upper surface of the chip. In some embodiments, the displacement device has a precision in the range of 1 μm to 10 μm, and the degree of freedom of adjustment of the displacement device includes at least one or more of X-axis movement, Y-axis movement, Z-axis movement, and Z-axis rotation. It will be appreciated that the displacement device is used to move the upper substrate or the lower substrate, so that the LED chips 203 and the optical signal detecting component 501 are located at a proper relative position and angle, and a plurality of LED chips 203 can be sequentially detected, thereby improving efficiency.
In some embodiments of the present application, the electrical signal detection component 401 comprises a brightness meter, a spectrometer, a light intensity meter, a silicon diode, a CCD sensor, an industrial camera, a lens group, an optical fiber, which are electrically connected to form a system. It will be appreciated that the function of the electrical signal detection component 401 is to obtain electrical information of the luminescence of the chip.
In some embodiments of the present application, the optical signal detection component 501 includes a high precision source meter, an ac ammeter, an oscilloscope electrically connected to form a system. It will be appreciated that the optical signal detecting section 501 functions to acquire electrical information for driving the chip to emit light.
In some embodiments of the present application, the power supply 301 includes a function generator, a power amplifier, and a high precision source meter electrically connected to form a system, such that the voltage waveform output by the power supply 301 is a superposition of one or more of a sine wave, a square wave, a pulse, a sawtooth wave, or a gaussian waveform. It will be appreciated that one electrode of the power supply unit 301 is connected to the lower conductive layer 202, and the other electrode is connected to the upper conductive layer 101, and the electric signal detecting unit 401 is further connected in series, so as to realize detection of the corresponding LED chip 203.
In some embodiments of the present application, coupling medium 204 comprises one or more high dielectric constant insulating liquid dielectrics of deionized water, ethanol, methanol, glycerol. In some embodiments, the coupling medium 204 is filled by a liquid injection method or an immersion method. It can be appreciated that the coupling medium 204 can increase the equivalent capacitance, improving the efficiency of current injection; the coupling medium 204 has higher light transmittance and refractive index larger than that of air, so that the light extraction efficiency can be enhanced; the coupling medium 204 may also encapsulate the LED chip 203, which is advantageous for protecting the chip from external damage.
In some embodiments of the present application, the gain lens 103 is a lens or a lens group composed of a plurality of lenses, and the minimum unit of the gain lens 103 is a plano-convex lens, a biconvex lens, an optimum profile lens, an aspherical lens, or a doublet lens. It will be appreciated that the lens or lenses are made of a high refractive index material such as glass, silica gel, PMMA, PC, etc.; the gain lens 103 has a condensing and enhancing effect on the weak light signal emitted from the LED chip 203, so that the light signal detecting section 501 receives more energy per unit area.
Referring to fig. 1 to 6, in a non-contact LED detection method with a coupling gain structure according to a second aspect of the present application, the non-contact LED detection method with a coupling gain structure may be a method for using a non-contact LED detection device with a coupling gain structure according to a first aspect of the present application, the non-contact LED detection method with a coupling gain structure includes the following steps:
s1: placing an LED chip 203 to be tested on the upper surface of the lower substrate;
s2: filling a coupling medium 204 into a gap between the upper substrate and the lower substrate, and covering the upper surface of the LED chip 203 to enable the chip to be completely located in the environment of the coupling medium 204;
s3: moving the lower substrate or the upper substrate to enable the upper conductive layer 101 to be opposite to the LED chip 203, and controlling a preset vertical distance between the lower surface of the upper substrate and the upper surface of the chip to enable a coupling medium 204 to be filled between the lower surface of the upper substrate and the upper surface of the chip;
s4: the power supply part 301 applies an electric signal with a proper waveform between the upper substrate and the lower substrate to drive the LED chip 203 to emit light in a non-contact manner; meanwhile, the electric signal detecting section 401 records the light emission information of the LED chip 203, and the optical signal detecting section 501 records the light emission information of the LED chip 203;
s5: after waiting for the completion of the recording by the optical signal detecting section 501 and the electric signal detecting section 401, the power supplying section 301 stops supplying power;
s6: steps S3-S5 are repeated until all LED chips 203 are detected.
Compared with the traditional detection of the non-contact LED chip 203, the invention can enhance the convergence effect on the light of the LED chip 203, improve the detection capability of the light signal detection component 501 on weak light of a small-size chip, and improve the sensitivity and accuracy of the detection of the LED chip 203.
Embodiment one:
in the present embodiment, the detection device detects a single LED chip 203 at a time, and the gain lens 103 is a single lens, wherein the light transmittance of the upper substrate in the light emission wavelength range of the detected LED chip 203 is 80%.
In this embodiment, the displacement device is an XYZR micro-motion stage with an accuracy of 1 μm, which can control the degrees of freedom of the lower substrate in X-direction movement, Y-direction movement, Z-direction movement, and rotation about the Z-axis.
In this embodiment, the size of the lower substrate is 5mm×5mm, the supporting layer is an FR-4 epoxy glass cloth laminated board, the metal layer is copper, and the LED chip 203 is disposed on the surface of the metal layer. The upper substrate is located above the LED chip 203, the size is 100 μm×100 μm, the material of the supporting layer is glass, the material of the conductive layer is ITO, the material of the insulating layer is SiO2 with thickness of 30nm, and the distance between the upper substrate and the upper surface of the chip is 10 μm.
In this embodiment, the coupling medium 204 is deionized water, and is filled in the gap between the upper substrate and the lower substrate by the liquid injection method.
In the present embodiment, the optical signal detecting section 501 is a CCD spectrometer. The electric signal detecting section 401 is an oscilloscope. The power supply unit 301 generates a waveform for the function generator, outputting a square wave with a voltage of 200Vpp and a frequency of 100kHz through the power amplifier.
In this embodiment, the gain lens 103 is located above the upper substrate and is closely attached to the upper substrate, and the number of lenses is 1, which is a common spherical lens, the material of which is glass, and the radius of the curved surface of the lens is 1mm.
Fig. 1 is a schematic diagram of a cross-sectional structure of a non-contact LED inspection apparatus with a coupling gain structure according to an embodiment of the present invention. The gain lens 103 is integrally manufactured above the upper support layer 102; the LED chip 203 is positioned on the upper surface of the lower substrate, the coupling medium 204 is positioned in a gap between the upper substrate and the lower substrate, and the LED chip 203 is completely wrapped; the lower surface of the upper substrate is not in direct contact with the LED chip 203, the LED chip 203 is driven by the power supply part 301 to perform non-contact electroluminescence, and the electric signal detection part 401 collects detailed information of electric signals; the optical signal detecting section 501 collects optical signal information during the light emission of the LED chip 203, which is performed in synchronization with the collection of the electrical signal.
Fig. 2 is a schematic top view of a non-contact LED detection device with a coupling gain structure according to an embodiment of the present invention. The to-be-detected LED chip 203 is filled and wrapped by the coupling medium 204, and the position of the optical signal detection component 5011 is fixed; starting from the lower left, the lower substrate moves one distance between the LED chips 203 at a time, one LED chip 203 is detected at a time, and after the detection of a certain row of chips is finished, the detection of another row of chips is continued to be carried out upwards in a Z shape until all the chips are detected.
Fig. 3 is a schematic sectional structure diagram of the detection motion process of the array of the LED chips 203 in the case that the positions of the upper substrate and the optical signal component are fixed, the lower substrate and the LED chips 203 are moved, and only a single LED chip 203 is detected each time, and the gain lens 103 is a single lens. The upper substrate and the optical signal detecting part 501 are fixed in position, and the lower substrate drives the LED chips 203 to move, and each time a single LED chip 203 is detected, until all the LED chips 203 are detected.
Fig. 4 is a schematic diagram illustrating a process of filling the coupling medium 204 when the coupling medium 204 is filled by the priming method according to the first embodiment of the present invention. The micro dropper 206 drops the coupling medium 204 on the upper surface of the lower substrate where the LED chip 203 is placed, and the lower substrate moves along with the dropping process of the coupling medium 204 until the coupling medium 204 fills the entire upper surface of the lower substrate and completely covers the upper surface of the LED chip 203, so that the gap between the upper and lower substrates is completely filled.
The embodiment has the advantages that one chip is detected at a time, the detection accuracy is high, the requirement on the detection component is low, the structural manufacturing difficulty of a single lens is low, the cost is low, and the stability of the detection component is high.
Embodiment two:
in this embodiment, the plurality of LED chips 203 and the gain lens 103 are each detected as a single lens, and the upper substrate and the optical signal detecting member 501 are moved, the lower substrate and the LED chips 203 are fixed, the coupling medium 204 is ethanol, and the upper substrate and the lower substrate are immersed in ethanol by immersing, so that the coupling medium 204 completely fills the gap between the upper substrate and the lower substrate.
Fig. 5 is a schematic cross-sectional structure of a detection device in which a plurality of LED chips 203 are detected each time, a gain lens 103 is a single lens, a coupling medium 204 is filled by immersion, an upper substrate and an optical signal detection part 501 move, and a lower substrate and the LED chips 203 are fixed. The upper substrate comprises an upper supporting layer 102, an upper conducting layer 101 and an integrally manufactured spherical gain lens 103; the lower substrate comprises a lower supporting layer 201, a lower conducting layer 202 and a lower insulating layer 205, the LED chip 203 is positioned on the upper surface of the lower substrate, and the coupling medium 204 completely wraps the LED chip 203; the power supply part 301 drives the LED chip 203 to be lightened in a non-contact mode, and the electric signal detection part 401 collects electric signals in the driving process; the optical signal detecting section 501 collects and analyzes the optical signal emitted from the LED chip 203; the positions of the lower substrate and the LED chip 203 are unchanged, and each time after the LED chip 203 of one area is detected, the optical signal detecting unit 501 and the upper substrate move to the next chip area without detection, and the detection of the chip of the next area is performed until all the chip detection is completed.
The embodiment has the advantages that the detection is carried out on multiple chips at a time, the detection efficiency is high, the manufacturing difficulty of a single lens is low, and the cost is low; the filling efficiency is higher by filling the coupling medium 204 by the immersion method, and the current injection efficiency can be improved by the coupling medium 204.
Embodiment III:
in this embodiment, each time a lens array composed of a plurality of LED chips 203 and a plurality of gain lenses 103 is detected, and the upper substrate and the optical signal detecting member 501 move, the lower substrate and the LED chips 203 are fixed in position, the coupling medium 204 is glycerin, and the coupling medium 204 is filled in the gap between the upper substrate and the lower substrate by the priming method.
Fig. 6 is a schematic cross-sectional structure of a detecting device in which a plurality of LED chips 203 are detected each time, a gain lens 103 is a lens array formed by a plurality of lenses, a filling mode of a coupling medium 204 is a priming method, an upper substrate and an optical signal detecting member 501 move, and a lower substrate and the LED chips 203 are fixed. The upper substrate comprises an upper supporting layer 102, an upper conducting layer 101 and an array spherical gain lens 103, and each lens corresponds to one LED chip 203; the lower substrate comprises a lower supporting layer 201 and a lower conducting layer 202, and the LED chip 203 is positioned on the upper surface of the lower substrate and is filled with a coupling medium 204; the power supply part 301 drives the LED chip 203 to be lightened in a non-contact mode, and the electric signal detection part 401 collects electric signals in the driving process; the optical signal detecting section 501 collects and analyzes the optical signal emitted from the LED chip 203; the positions of the lower substrate and the chips are unchanged, and each time the LED chips 203 of one area are detected, the optical signal detecting unit 501 and the upper substrate are moved to the next area of the chips which are not detected, and the detection of the chips of the next area is performed until all the chip detection is completed.
The embodiment has the advantages that the detection efficiency is high due to the fact that multiple chips are detected at a time, and the gain lens 103 is a lens array formed by multiple lenses and can play a role in enhancing light rays of each LED chip 203; the coupling medium 204 is filled by the priming method, so that the consumption of the coupling medium 204 can be reduced, more accurate position filling is realized, and meanwhile, the current injection efficiency of the coupling medium 204 can be improved.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The embodiments of the present application have been described in detail above with reference to the accompanying drawings, but the present application is not limited to the above embodiments, and various changes can be made within the knowledge of one of ordinary skill in the art without departing from the spirit of the present application.
Claims (10)
1. A non-contact LED inspection device with a coupling gain structure, comprising:
the LED device comprises a lower substrate, a lower substrate and a lower substrate, wherein the lower substrate comprises a lower supporting layer and a lower conductive layer which are sequentially arranged from bottom to top, and the lower conductive layer is used for arranging an LED chip to be detected;
the upper substrate is arranged above the lower substrate and comprises a gain lens, an upper supporting layer and an upper conducting layer which are sequentially arranged from top to bottom, wherein the upper supporting layer and the upper conducting layer are made of transparent materials;
the coupling medium is arranged between the lower substrate and the upper substrate and is used for wrapping the LED chip;
the power supply component is respectively connected with the lower conductive layer and the upper conductive layer and forms a loop;
the electric signal detection component is arranged in the loop in series and is used for detecting electric signal information of the LED chip;
and the optical signal detection component is matched with the gain lens and is used for detecting optical signal information of the LED chip.
2. The non-contact LED detection device with coupling gain structure of claim 1, wherein: the LED chip comprises an upper substrate, a lower substrate, an upper conductive layer, a lower conductive layer, a displacement device and a display device, wherein the displacement device is used for driving the upper substrate or the lower substrate to move so that the upper conductive layer is opposite to the LED chip, and a preset vertical distance is reserved between the lower surface of the upper substrate and the upper surface of the chip.
3. The non-contact LED detection device with coupling gain structure of claim 2, wherein: the precision of the displacement device is in the range of 1-10 mu m, and the degree of freedom of adjustment of the displacement device at least comprises one or more of X-axis movement, Y-axis movement, Z-axis movement and Z-axis rotation.
4. The non-contact LED detection device with coupling gain structure of claim 1, wherein: the electric signal detection component comprises a brightness meter, a spectrometer, a light intensity meter, a silicon diode, a CCD sensor, an industrial camera, a lens group and an optical fiber which are electrically connected to form a system.
5. The non-contact LED detection device with coupling gain structure of claim 1, wherein: the optical signal detection component comprises a high-precision source meter, an alternating current meter and an oscilloscope which are electrically connected to form a system.
6. The non-contact LED detection device with coupling gain structure of claim 1, wherein: the power supply part comprises a function generator, a power amplifier and a high-precision source meter which are electrically connected to form a system, so that the voltage waveform output by the power supply part is one or more of sine wave, square wave, pulse, sawtooth wave or Gaussian wave.
7. The non-contact LED detection device with coupling gain structure of claim 1, wherein: the coupling medium comprises one or more high dielectric constant insulating liquid dielectrics selected from deionized water, ethanol, methanol and glycerin.
8. The non-contact LED detection device with coupling gain structure of claim 7, wherein: the filling mode of the coupling medium is a priming method or an immersion method.
9. The non-contact LED detection device with coupling gain structure of claim 1, wherein: the gain lens is a lens or a lens group consisting of a plurality of lenses, and the minimum unit of the gain lens is a plano-convex lens, a biconvex lens, an optimal shape lens, an aspheric lens or a biconic lens.
10. A detection method of a noncontact LED detection device with coupling gain configuration as claimed in any one of claims 1 to 9, including the steps of:
s1: placing an LED chip to be tested on the upper surface of the lower substrate;
s2: filling a coupling medium into a gap between the upper substrate and the lower substrate, and covering the upper surface of the LED chip to enable the chip to be completely located in the environment of the coupling medium;
s3: the lower substrate or the upper substrate is moved to enable the upper conductive layer to be opposite to the LED chip, and a preset vertical distance is controlled between the lower surface of the upper substrate and the upper surface of the chip, so that a coupling medium is filled between the lower surface of the upper substrate and the upper surface of the chip;
s4: the power supply part applies an electric signal with a proper waveform between the upper substrate and the lower substrate to drive the LED chip to emit light in a non-contact manner; meanwhile, the electric signal detection part records the luminous information of the LED chip, and the optical signal detection part records the luminous information of the LED chip;
s5: after the optical signal detection part and the electric signal detection part are recorded, the power supply part stops supplying power;
s6: and repeating the steps S3-S5 until all the LED chips are detected.
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