CN117706316A - Wafer testing method, device, equipment and medium of probe station - Google Patents
Wafer testing method, device, equipment and medium of probe station Download PDFInfo
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- CN117706316A CN117706316A CN202410167052.1A CN202410167052A CN117706316A CN 117706316 A CN117706316 A CN 117706316A CN 202410167052 A CN202410167052 A CN 202410167052A CN 117706316 A CN117706316 A CN 117706316A
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- 239000000523 sample Substances 0.000 title claims abstract description 56
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- 238000009826 distribution Methods 0.000 claims abstract description 46
- 238000010586 diagram Methods 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 22
- 235000012431 wafers Nutrition 0.000 claims description 487
- 238000004590 computer program Methods 0.000 claims description 12
- 238000012546 transfer Methods 0.000 claims description 12
- 238000003860 storage Methods 0.000 claims description 8
- 238000010998 test method Methods 0.000 claims description 5
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- 238000003384 imaging method Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
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Abstract
The invention provides a wafer testing method, device, equipment and medium of a probe station, wherein the method comprises the following steps: acquiring a target needle pressure and a corresponding target needle mark range of a central area of a first wafer in the wafer conveying box; performing an electrical performance test on other areas of the first wafer according to the target acupressure to obtain corresponding acupoints; and adjusting the needle marks of other areas of the first wafer until the target needle mark range is reached, and acquiring a needle pressure distribution diagram of the needle pressures of the different areas of the first wafer. The wafer testing method, the device, the equipment and the medium of the probe station can improve the testing precision of wafer testing.
Description
Technical Field
The present invention relates to the field of semiconductors, and in particular, to a method, an apparatus, a device, and a medium for testing a wafer on a probe station.
Background
A Probe Station (Probe Station) may place tiny test Probe tips on a wafer to test the performance and functionality of the wafer circuits. In wafer testing, the probe tips need to be in contact with the wafer to ensure accurate electrical signal transmission. The probe station may be used to control the contact force between the probe tip and the wafer to achieve a stable and reliable contact.
In the current wafer performance test process, the needle pressure of the probes of the probe station is fixed for the same lot (lot) of wafers. Because the thickness of different wafers is different, the condition that the thickness of the test metal gasket is uneven can exist at the same time, so that the needle pressure on the contact surface between the probe tip and the wafer is different, and the test precision is affected. Therefore, there is a need for improvement.
Disclosure of Invention
The invention aims to provide a wafer testing method, device, equipment and medium for a probe station, so as to improve the testing precision of wafer electrical property testing.
In order to solve the technical problems, the invention is realized by the following technical scheme:
the invention provides a wafer testing method of a probe station, which comprises the following steps:
acquiring a target needle pressure and a corresponding target needle mark range of a central area of a first wafer in the wafer conveying box;
performing an electrical performance test on other areas of the first wafer according to the target acupressure to obtain corresponding acupoints;
adjusting needle marks of other areas of the first wafer until the target needle mark range is reached, and acquiring needle pressure distribution diagrams of the needle pressures of the different areas of the first wafer;
Acquiring a plurality of wafers to be tested according to preset conditions, and performing electrical performance test on the central area of the wafers to be tested according to the target acupressure to acquire the acupoints of the central area of the wafers to be tested;
adjusting the needle mark of the central area of the wafer to be tested until the target needle mark range is reached, and obtaining corresponding needle pressure;
acquiring a difference value between the acupressure of the central area of the wafer to be tested and the target acupressure, and calculating acupressure of other areas of the wafer to be tested according to the acupressure distribution diagram and the difference value so as to complete the electrical performance test of the wafer to be tested;
fitting the serial number of the tested wafer according to the functional relation of the serial number of the tested wafer and the acupressure of the central area of the tested wafer to obtain the fitted acupressure of the central area of the untested wafer;
and obtaining a difference value between the fitting acupressure of the untested wafer and the target acupressure, and calculating acupressure of other areas of the untested wafer according to the acupressure distribution diagram and the difference value so as to complete electrical performance test of the untested wafer.
In an embodiment of the present invention, the step of obtaining the target acupressure and the corresponding target acupressure range of the central area of the first wafer in the wafer cassette includes:
Acquiring a wafer transfer box, wherein a plurality of wafers to be tested are stored in the wafer transfer box;
acquiring a first wafer, and performing an electrical performance test on a central area of the first wafer to form a needle mark on the central area of the first wafer;
and setting target acupressure according to the acupoints of the central area of the first wafer, and setting a target acupressure range.
In an embodiment of the present invention, the step of adjusting the needle mark of the other area of the first wafer until the target needle mark range is reached, and obtaining the needle pressure distribution map of the needle pressure of the different area of the first wafer includes:
judging whether the needle marks of other areas of the first wafer are within the target needle mark range or not;
if the needle mark of a certain area of the first wafer is within the target needle mark range, the needle pressure of the certain area of the first wafer is the same as the target needle pressure;
if the needle mark of a certain area of the first wafer is not in the target needle mark range, acquiring a difference value between the needle mark of the area and a preset target needle mark, and representing the difference value as a first difference value;
repeating the electrical performance test on a certain area of the first wafer until the needle mark on the certain area of the first wafer is within the target needle mark range, and acquiring the needle pressure of the certain area of the first wafer;
And fitting the first wafer according to the functional relation between the acupressure of a certain area of the first wafer and the first difference value to obtain acupressure distribution diagrams of different areas on the first wafer and acupressure of the first wafer.
In an embodiment of the present invention, the step of adjusting the needle mark of the central area of the wafer to be tested until the target needle mark range is reached, and obtaining the corresponding needle pressure includes:
judging whether the needle mark of the central area of the wafer to be tested is within the target needle mark range;
if the needle mark of the central area of the wafer to be detected is within the target needle mark range, the needle pressure of the central area of the wafer to be detected is the same as the target needle pressure;
and if the needle mark of the central area of the wafer to be tested is not in the target needle mark range, repeating the electrical performance test on the central area of the wafer to be tested until the needle mark of the central area of the wafer to be tested is in the target needle mark range, and obtaining the needle pressure of the central area of the wafer to be tested.
In an embodiment of the present invention, the step of obtaining a difference between the acupressure of the central area of the wafer to be tested and the target acupressure, and calculating acupressure of other areas of the wafer to be tested according to the acupressure distribution map and the difference, so as to complete the electrical performance test of the wafer to be tested includes:
Acquiring a difference value between the needle pressure of the central area of the wafer to be detected and the target needle pressure, wherein the difference value is expressed as a second difference value;
and respectively calculating the sum of the acupressure of different areas on the acupressure distribution diagram and the second difference value, and obtaining acupressure of other areas of the wafer to be tested so as to finish the electrical property test of the wafer to be tested.
In an embodiment of the present invention, the step of obtaining a difference between the fitted acupressure of the untested wafer and the target acupressure, and calculating acupressure of other areas of the untested wafer according to the acupressure distribution map and the difference, so as to complete the electrical performance test of the untested wafer includes:
obtaining a difference value between the fitting acupressure of the untested wafer and the target acupressure, and representing the difference value as a third difference value;
and respectively calculating the sum of the acupressure of different areas on the acupressure distribution diagram and the third difference value, and obtaining acupressure of other areas of the untested wafer so as to finish the electrical property test of the wafer to be tested.
In an embodiment of the present invention, an area of a central area of the first wafer is the same as an area of other areas, and the preset condition is expressed as: and selecting a plurality of wafers to be tested at intervals according to the numbers of the wafers to be tested in the wafer conveying box.
The invention also provides a wafer testing device of the probe station, which comprises:
the data setting module is used for acquiring the target needle pressure of the central area of the first wafer in the wafer conveying box and the corresponding target needle mark range;
the first testing module is used for testing the electrical properties of other areas of the first wafer according to the target needle pressure so as to obtain corresponding needle marks, adjusting the needle marks of other areas of the first wafer until reaching the target needle mark range, and obtaining a needle pressure distribution diagram of the needle pressure of the other areas of the first wafer;
the second testing module is used for acquiring a plurality of wafers to be tested according to preset conditions, carrying out electrical performance testing on the central area of the wafers to be tested according to the target acupressure to acquire acupoints of the central area of the wafers to be tested, adjusting the acupoints of the central area of the wafers to be tested until reaching the target acupoints range, acquiring corresponding acupoints, acquiring the difference between the acupoints of the central area of the wafers to be tested and the target acupoints, and calculating acupoints of other areas of the wafers to be tested according to the acupoints distribution map and the difference to finish the electrical performance testing of the wafers to be tested; and
And the third testing module is used for fitting the serial number of the tested wafer according to the functional relation of the needle pressure of the central area of the tested wafer, obtaining the fitted needle pressure of the central area of the untested wafer, obtaining the difference value between the fitted needle pressure of the untested wafer and the target needle pressure, and calculating the needle pressures of other areas of the untested wafer according to the needle pressure distribution diagram and the difference value so as to finish the electrical property test of the untested wafer.
The invention also provides a computer device, which comprises a memory, a processor and a computer program stored in the memory and capable of running on the processor, wherein the processor realizes the steps of the wafer testing method of the probe station when executing the computer program.
The invention also provides a computer readable storage medium storing a computer program which when executed by a processor implements the steps of the wafer testing method of the probe station.
As described above, the wafer testing method, apparatus, device and medium for a probe station provided by the present invention have the unexpected effect that, when testing wafers of the same lot of wafers to be tested, different acupressure can be set for the same wafer according to different testing areas, so as to perform electrical performance test and form acupoints in the testing areas of the wafer, and meanwhile, contact quality between the probe and the wafer is ensured, and reliable testing results are obtained. For different wafers to be tested, different acupressure can be set according to the thickness of the wafer, so that the damage to the surface of the wafer can be minimized. Meanwhile, the electrical testing precision of the wafer can be effectively improved.
Of course, it is not necessary for any one product to practice the invention to achieve all of the advantages set forth above at the same time.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a method for testing a wafer on a probe station according to an embodiment of the invention;
FIG. 2 is a flowchart of step S10 in FIG. 1;
FIG. 3 is a schematic illustration of a first wafer area division;
FIG. 4 is another schematic view of a first wafer area division;
FIG. 5 is a flowchart of step S30 in FIG. 1;
FIG. 6 is a schematic diagram of a fitting function;
FIG. 7 is another schematic representation of a fitting function;
FIG. 8 is a flowchart of step S50 in FIG. 1;
FIG. 9 is a flowchart of step S60 in FIG. 1;
FIG. 10 is a flowchart of step S80 in FIG. 1;
FIG. 11 is a schematic diagram of acupressure of different wafers to be tested;
fig. 12 is a schematic view of a wafer testing apparatus of the probe station.
In the figure: 100. a data setting module; 200. a first test module; 300. a second test module; 400. a third test module; 1000. a first wafer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, the present invention provides a wafer testing method of a probe station, which can be applied to a wafer electrical performance testing process. In the quality inspection process of wafer production, electrical performance testing for wafers is a very critical process. This process typically involves test probes (typically a row of fine needles or styli) of a probe station that contact a particular area of the wafer for electrical performance testing. The test method may comprise the steps of:
step S10, obtaining a target needle pressure and a corresponding target needle mark range of a central area of a first wafer in the wafer conveying box;
step S20, performing electrical performance test on other areas of the first wafer according to the target acupressure to obtain corresponding acupoints;
Step S30, adjusting needle marks of other areas of the first wafer until reaching a target needle mark range, and acquiring needle pressure distribution diagrams of the needle pressures of the different areas of the first wafer;
step S40, obtaining a plurality of wafers to be tested according to preset conditions, and performing electrical performance test on the central area of the wafers to be tested according to target acupressure to obtain the acupoints of the central area of the wafers to be tested;
step S50, adjusting the needle mark of the central area of the wafer to be tested until reaching the target needle mark range, and obtaining corresponding needle pressure;
step S60, obtaining a difference value between the acupressure of the central area of the wafer to be tested and the target acupressure, and calculating acupressure of other areas of the wafer to be tested according to the acupressure distribution diagram and the difference value so as to complete electrical performance test of the wafer to be tested;
step S70, fitting the number of the tested wafer according to the functional relation between the number of the tested wafer and the acupressure of the central area of the tested wafer to obtain the fitted acupressure of the central area of the untested wafer;
and S80, obtaining a difference value between the fitting acupressure of the untested wafer and the target acupressure, and calculating acupressure of other areas of the untested wafer according to the acupressure distribution diagram and the difference value so as to complete electrical performance test of the untested wafer.
Referring to fig. 2, in one embodiment of the present invention, when step S10 is performed, specifically, step S10 may include the following steps:
step S11, acquiring a wafer transfer box, wherein a plurality of wafers to be tested are stored in the wafer transfer box;
step S12, acquiring a first wafer, and performing an electrical performance test on a central area of the first wafer to form a needle mark on the central area of the first wafer;
and S13, setting target acupressure according to the acupoints of the central area of the first wafer, and setting a target acupressure range.
In one embodiment of the present invention, when step S11 is performed, specifically, when the electrical performance test is required for the wafer, since the wafer is stored in the wafer transfer box (FOUP, front Opening Unified Pod), the wafer to be tested can be obtained from the wafer transfer box by the robot arm of the machine. In this case, a cassette may store a plurality of wafers, for example, a standard-sized cassette may generally hold 25 wafers, and thus the number of wafers to be tested in the cassette may be plural.
In one embodiment of the present invention, when step S12 is performed, specifically, in performing an electrical performance test on a wafer to be tested in the wafer carrier, the first wafer 1000 in the wafer carrier may be acquired first, for example, the first wafer 1000 may be acquired by a mechanical arm of a machine, and then the first wafer 1000 is placed on a probe station, and the electrical performance test is performed on the first wafer 1000 by a test probe of the probe station.
For example, during electrical performance testing, the first wafer 1000 may be placed on a suitable wafer holder or vacuum chuck to ensure that the first wafer 1000 is stationary and in a horizontal state. The probe station can view the surface of the first wafer 1000 and the test probe positions through an imaging device such as a CCD camera to enable the test probes to be aligned with the center region of the first wafer 1000. By adjusting the field of view of the imaging device, it is confirmed that the test probes are aligned with test points (e.g., electrodes or contact points) on the central region of the first wafer 1000, and then the test probes are brought into contact with the first wafer 1000 by the Z-axis control of the probe station. The test probes are pressed on the corresponding electrodes of the first wafer 1000 to form pin presses and generate pin marks, and then electrical performance test can be performed. The test instrument applies a voltage or current to the first wafer 1000 through the test probe according to a predetermined test procedure to complete the test.
In one embodiment of the present invention, when step S13 is performed, specifically, after the electrical performance test, a corresponding trace is formed on the central area of the first wafer 1000. The needle mark on the central area can be the mark left by the ideal needle depression designed according to the application requirement and the test specification. According to the needle mark, the corresponding target needle pressure of the test probe of the probe station can be obtained. The target acupressure may be the pressing force of the test probe to the first wafer 1000 selected or set according to the requirement. The target acupressure needs to be large enough to establish good electrical contact between the contact surfaces of the test probes and the first wafer 1000. Meanwhile, a target stitch range may be set according to the stitch of the central area of the first wafer 1000. In this embodiment, the scribe line of the central area of the first wafer 1000 may be a predetermined target scribe line. The target acupressure can be in the range of 30um to 40um, the target acupressure can be in the range of 13um to 15um, and the target acupressure range can be expressed as the range of 12um to 16 um. For example, the target acupressure may be 30um, 35um, 40um, etc., and the target acupressure may be 13um, 14um, 15um, etc.
In one embodiment of the present invention, when step S20 is performed, specifically, after the target acupressure is obtained, electrical performance test needs to be performed on other areas of the first wafer 1000. For the non-central area of the first wafer 1000, there are multiple test points on the non-central area, and different test points are distributed on different areas, so that the non-central area of the first wafer 1000 can be distinguished to obtain corresponding test points from each area for testing.
Referring to fig. 3 and 4, in one embodiment of the present invention, when differentiating non-central areas of the surface of the first wafer 1000, since the wafer is circular in shape, a plurality of concentric circles may be drawn on the surface of the first wafer 1000, and at the same time, the areas of the different concentric rings and the areas of the central circles need to be kept the same. In this embodiment, the number of concentric circles is three as an example. Referring to fig. 3, after the concentric circles are drawn, they may be divided into six areas according to the 1-shape. Six areas may be represented as area a, area B, area C, area D, area E, area F in sequence. Referring to fig. 4, after the concentric circles are drawn, they may be divided into twelve areas according to a cross shape. Twelve areas may be represented as area a, area b, area c, area d, area e, area f, area g, area h, area i, area j, area k, area l in that order. In other embodiments, it may also be partitioned into twenty-four regions in a zig-zag fashion. The more the divided areas, the more the number of corresponding needle marks obtained later, and the more accurate the result. In the area division, the number of divisions may not be limited as long as it is possible to satisfy that the area of each area is approximately the same.
In one embodiment of the present invention, after the division of the other areas on the surface of the first wafer 1000 is completed, the electrical performance test may be performed on the other areas of the first wafer 1000 according to the target acupressure to obtain the corresponding acupoints of the other areas. The number of the needle marks can be multiple, one needle mark can be formed on each area, and each needle mark can correspond to one area.
Referring to fig. 5, in one embodiment of the present invention, when step S30 is performed, specifically, step S30 may include the following steps:
step S31, judging whether the needle mark of other areas of the first wafer is within the target needle mark range;
step S32, if the needle mark of a certain area of the first wafer is within the target needle mark range, the needle pressure of the certain area of the first wafer is the same as the target needle pressure;
step S33, if the needle mark of a certain area of the first wafer is not in the target needle mark range, obtaining a difference value between the needle mark of the area and a preset target needle mark, and representing the difference value as a first difference value;
step S34, repeatedly performing electrical performance test on a certain area of the first wafer until the needle mark on the certain area of the first wafer is within the target needle mark range, and obtaining the needle pressure of the certain area of the first wafer;
Step S35, fitting the first wafer according to the functional relation between the acupressure of a certain area of the first wafer and the first difference value to obtain acupressure distribution diagrams of different areas on the first wafer and acupressure of the different areas.
In one embodiment of the present invention, when step S31 is performed, specifically, when the electrical performance test is performed on the other area of the first wafer 1000, the applied acupressure is the target acupressure. Since the surface of the first wafer 1000 may have uneven thickness of the test metal pad, the needle pressure on the contact surface between the test probe and other areas may be different, and thus the needle mark on different areas may be different. Therefore, it is necessary to determine whether the needle marks on different areas meet the requirements, i.e. whether the needle marks are all within the target needle mark range.
In one embodiment of the present invention, when step S32 is performed, specifically, when the needle mark of a certain area of the first wafer 1000 is within the target needle mark range, the accuracy of the electrical measurement result indicating the area can meet the requirement, and no adjustment is required for the needle pressure of the area. The acupressure in this region may be the same as the target acupressure.
In one embodiment of the present invention, when step S33 is performed, specifically, when the needle mark of a certain area of the first wafer 1000 is not within the target needle mark range, the accuracy of the electrical measurement result indicating the area cannot meet the requirement, and the needle pressure of the area needs to be adjusted so that the needle mark of the area after the adjustment can meet the requirement. In the process of adjusting the needle pressure of the area, a difference between the needle mark of the area of the first wafer 1000 and the target needle mark may be obtained, which is denoted as a first difference. Since there may be a plurality of regions of the first wafer 1000 where the needle mark is not within the target needle mark range, the number of the first differences may be plural, and each of the first differences may correspond to one region.
In one embodiment of the present invention, when step S34 is performed, specifically, since the needle mark on a certain area cannot meet the requirement, the electrical performance test may be repeated for the area that does not meet the requirement, and a new needle mark may be generated. The size of the newly generated needle mark can be identified by an imaging device such as a CCD camera and compared with the target needle mark range until the needle mark on the other areas of the first wafer 1000 is within the target needle mark range, and at this time, the corresponding needle pressure on the other areas of the first wafer 1000 can be obtained. Since the number of the areas requiring needle mark adjustment may be plural, the number of the acquired needle pressures may be plural, and the needle pressure of each area requiring needle mark adjustment may correspond to a first difference.
Referring to fig. 6 and 7, in an embodiment of the present invention, when step S35 is performed, specifically, after a plurality of first differences and a plurality of acupressure are obtained, for the same area with the adjusted acupoints, the area can correspond to a first difference and a acupressure. Therefore, the first difference and the acupressure can be fitted according to the functional relationship between the first difference and the acupressure to obtain acupressure distribution maps (maps) of different areas on the first wafer 1000 and acupressure. At the same time, for areas that do not require adjustment, it can also be fitted into the acupressure profile. The needle pressure profile may be used to indicate the amount of needle mark variation in different areas as a function of needle pressure.
In one embodiment of the present invention, when step S40 is performed, specifically, after the electrical performance test of the first wafer 1000 is completed, the acupressure map of the first wafer 1000 and the target acupressure range can be obtained. And then, selecting other wafers to be tested according to preset conditions for testing. In this embodiment, since the number of wafers in the wafer cassette may be 25, the preset condition may be expressed as: and selecting a plurality of wafers to be tested at intervals according to the numbers of the wafers to be tested in the wafer conveying box for testing. For example, the test may be performed on four wafers at each interval, i.e., 1# wafer, 5# wafer, 10# wafer, 15# wafer, 20# wafer, 25# wafer, and the wafers are respectively designated as a first wafer 1000, a second wafer, a third wafer, a fourth wafer, a fifth wafer, and a sixth wafer. Of course, in other embodiments, other numbers of wafers may be tested at intervals, for example, two, three, etc. wafers may be tested at intervals.
Further, after other wafers are selected from the wafer transfer box, electrical performance testing can be performed on the central areas of other wafers to be tested according to the target acupressure so as to obtain the acupoints of the central areas of the other wafers to be tested. The thickness may be different for different wafers, and thus, the size of the resulting needle mark may be different even if the same target needle pressure is applied to the center area of different wafers to be tested.
Referring to fig. 8, in one embodiment of the present invention, when step S50 is performed, specifically, step S50 may include the following steps:
step S51, judging whether the needle mark of the central area of the wafer to be tested is within the target needle mark range;
step S52, if the needle mark of the central area of the wafer to be tested is within the target needle mark range, the needle pressure of the central area of the wafer to be tested is the same as the target needle pressure;
and step S53, if the needle mark of the central area of the wafer to be tested is not in the target needle mark range, repeating the electrical performance test on the central area of the wafer to be tested until the needle mark of the central area of the wafer to be tested is in the target needle mark range, and obtaining the needle pressure of the central area of the wafer to be tested.
In one embodiment of the present invention, when step S51 is performed, specifically, when the electrical performance test is performed on the central area of the other wafer to be tested, the applied acupressure is the target acupressure. Because the thicknesses of different wafers to be tested may be different, the surfaces of the different wafers to be tested may have uneven thickness of the test metal pad, which results in different needle pressures on contact surfaces between the test probe and the central areas of the different wafers to be tested, and thus, the needle marks obtained in the central areas of the different wafers to be tested may be different. Therefore, it is necessary to determine whether the needle marks of different wafers to be tested meet the requirements, i.e. determine whether the needle marks are within the target needle mark range.
In one embodiment of the present invention, when step S52 is performed, specifically, when the needle mark of the central area of a certain wafer to be tested is within the target needle mark range, the accuracy of the electrical test result indicating the wafer to be tested can reach the requirement, and no adjustment is required for the needle pressure of other areas of the wafer to be tested. The acupressure of the central area of the wafer to be tested is the same as the target acupressure. At this time, the acupressure of different areas can be obtained according to the acupressure distribution diagram of the first wafer 1000, so as to complete the electrical performance test of other areas of the wafer to be tested.
In one embodiment of the present invention, when step S53 is performed, specifically, when the needle mark in the central area of a certain wafer to be tested is not within the target needle mark range, the accuracy of the electrical test result of the wafer to be tested cannot meet the requirement, and the needle pressure in other areas of the wafer to be tested needs to be adjusted, so that the needle mark in the central area of the adjusted wafer to be tested can meet the requirement.
Specifically, the electrical performance test can be repeatedly performed on the center area of the wafer to be tested which does not meet the requirement, and a new trace is generated. The size of the newly generated needle mark can be identified through imaging equipment such as a CCD camera and the like, and compared with the target needle mark range. And obtaining the corresponding acupressure on the central area of the wafer to be tested until the acupoints on the central area of the wafer to be tested are within the target acupoints range. The number of the wafers to be tested which do not meet the requirement may be multiple, and the number of the needle pressures of the central area of the wafers to be tested after the adjustment may be multiple.
Referring to fig. 9, in one embodiment of the present invention, when step S60 is performed, specifically, step S60 may include the following steps:
step S61, obtaining a difference value between the needle pressure of the central area of the wafer to be detected and the target needle pressure, wherein the difference value is expressed as a second difference value;
and step S62, respectively calculating the sum of the acupressure of different areas on the acupressure distribution diagram and the second difference value, and obtaining acupressure of other areas of the wafer to be tested so as to finish the electrical performance test of the wafer to be tested.
In one embodiment of the present invention, when step S61 and step S62 are performed, specifically, after the needle mark of the central area of a certain wafer to be tested is adjusted, a difference between the needle pressure of the central area of the wafer to be tested and the target needle pressure may be obtained, which is denoted as a second difference. For example, the target acupressure is p, and acupressure of the central area of the wafer to be tested of the second and third wafers is q and t, respectively. At this time, the second difference of the second wafer is denoted as q-p, and the second difference of the third wafer is denoted as t-p. Then, the acupressure of the different areas can be obtained according to the acupressure distribution map of the first wafer 1000. And calculating the acupressure on other areas of the wafer to be tested to be adjusted according to the sum of acupressure of different areas on the acupressure distribution diagram and the second difference value so as to finish the electrical performance test of the wafer to be tested. For example, if the acupressure of the region a of the first wafer 1000 is m and the acupressure of the region B is n, the acupressure of the region a of the second wafer may be set to m+q-p and the acupressure of the region B may be set to n+q-p.
In one embodiment of the present invention, when step S70 is performed, specifically, after the electrical performance test of the selected wafer to be tested is completed, the needle pressure of the untested wafer in the wafer transfer box needs to be adjusted. For example, the electrical performance test of the 1# wafer, the 5# wafer, the 10# wafer, the 15# wafer, the 20# wafer, and the 25# wafer is completed, and the needle pressure needs to be adjusted for other numbered wafers. In this embodiment, after the acupressure of the central area of the tested wafer is obtained, fitting is performed on the number of the tested wafer according to the functional relationship between the acupressure of the central area of the tested wafer, so as to obtain the fitted acupressure of the central area of the untested wafer.
For example, the tested wafer may be a 1# wafer, a 5# wafer, a 10# wafer, a 15# wafer, a 20# wafer, or a 25# wafer. In this embodiment, the numbers of the 6 wafers are abscissa, and the acupressure of the central area of the wafer is ordinate, and the fitting process is performed on the acupressure of the central area of the wafer, so as to obtain a fitting curve, so as to obtain fitting acupressure of the central areas of the wafers to be measured with different numbers.
Referring to fig. 10, in one embodiment of the present invention, when step S80 is performed, specifically, step S80 may include the following steps:
Step S81, obtaining a difference value between the fitting acupressure of the untested wafer and the target acupressure, and representing the difference value as a third difference value;
and S82, respectively calculating the sum of the acupressure of different areas on the acupressure distribution diagram and the third difference value, and obtaining acupressure of other areas of the wafer which is not tested so as to finish the electrical performance test of the wafer to be tested.
Referring to fig. 11, in one embodiment of the present invention, when step S81 and step S82 are performed, specifically, on the fitting curve, the fitting acupressure of the central area of the other untested wafer can be obtained. In this embodiment, for a 2# wafer, the fit acupressure of its central region may be expressed as x. At this time, a difference between the fitted acupressure of the central region of the 2# wafer and the target acupressure of the central region of the 1# wafer may be obtained, which is expressed as a third difference y, y=x-p. Then, the acupressure of the different areas can be obtained according to the acupressure distribution map of the first wafer 1000. And calculating the acupressure of other areas of the untested wafer according to the sum of the acupressure of different areas on the acupressure distribution diagram and the third difference value so as to finish the electrical performance test of the untested wafer. For example, the acupressure of region a of the 2# wafer may be expressed as m+y, i.e., m+x-p. The acupressure of region B of the 2# wafer may be expressed as n+y, i.e., n+x-p. After the acupressure of different areas of the No. 2 wafer is obtained, the electrical performance test of the corresponding area can be completed according to the different acupressure.
Therefore, in the above scheme, when testing wafers of the same batch of wafers to be tested, different acupressure can be set for the same wafer according to different testing areas so as to test the electrical performance of the testing areas of the wafer and form the acupoints, and meanwhile, the contact quality between the probes and the wafer is ensured, and reliable testing results are obtained. For different wafers to be tested, different acupressure can be set according to the thickness of the wafer, so that the damage to the surface of the wafer can be minimized. Meanwhile, the electrical testing precision of the wafer can be effectively improved.
It should be understood that the sequence number of each step in the foregoing embodiment does not mean that the execution sequence of each process should be determined by the function and the internal logic, and should not limit the implementation process of the embodiment of the present invention.
Referring to fig. 12, the present invention further provides a wafer testing apparatus of the probe station, where the testing apparatus corresponds to the testing method in the above embodiment one by one. The test apparatus may include a data setting module 100, a first test module 200, a second test module 300, and a third test module 400. The functional modules are described in detail as follows:
In one embodiment of the present invention, the data setting module 100 may be configured to obtain a target acupressure and a corresponding target acupressure range of the central region of the first wafer 1000 in the wafer cassette
In one embodiment of the present invention, the data setting module 100 may be specifically configured to obtain a wafer transfer box, where a plurality of wafers to be tested are stored in the wafer transfer box; acquiring a first wafer, and performing an electrical performance test on a central area of the first wafer to form a needle mark on the central area of the first wafer; and setting target acupressure according to the acupoints of the central area of the first wafer, and setting a target acupressure range.
In one embodiment of the present invention, the first testing module 200 may be configured to perform an electrical performance test on other areas of the first wafer according to the target acupressure to obtain corresponding acupoints; and adjusting the needle marks of other areas of the first wafer until reaching the target needle mark range, and acquiring needle pressure distribution diagrams of the needle pressures of the different areas of the first wafer.
In one embodiment of the present invention, the first test module 200 may be specifically configured to determine whether the scribe line of the other area of the first wafer is within the target scribe line range; if the needle mark of a certain area of the first wafer is within the target needle mark range, the needle pressure of the certain area of the first wafer is the same as the target needle pressure; if the needle mark of a certain area of the first wafer is not in the target needle mark range, acquiring a difference value between the needle mark of the area and a preset target needle mark, and representing the difference value as a first difference value; repeating the electrical performance test on a certain area of the first wafer until the needle mark on the certain area of the first wafer is within the target needle mark range, and acquiring the needle pressure of the certain area of the first wafer; and fitting the first wafer according to the functional relation between the acupressure of a certain area of the first wafer and the first difference value to obtain acupressure distribution diagrams of different areas on the first wafer and acupressure of the first wafer.
In one embodiment of the present invention, the second testing module 300 may be configured to obtain a plurality of wafers to be tested according to a preset condition, and perform an electrical performance test on a central area of the wafers to be tested according to a target acupressure to obtain an acupressure mark of the central area of the wafers to be tested; adjusting the needle mark of the central area of the wafer to be tested until reaching the target needle mark range, and obtaining the corresponding needle pressure; and obtaining the difference value between the needle pressure of the central area of the wafer to be tested and the target needle pressure, and calculating the needle pressure of other areas of the wafer to be tested according to the needle pressure distribution diagram and the difference value so as to finish the electrical property test of the wafer to be tested.
In one embodiment of the present invention, the second testing module 300 may be specifically configured to determine whether the trace of the center area of the wafer to be tested is within the target trace range; if the needle mark of the central area of the wafer to be tested is within the target needle mark range, the needle pressure of the central area of the wafer to be tested is the same as the target needle pressure; and if the needle mark of the central area of the wafer to be tested is not in the target needle mark range, repeating the electrical performance test on the central area of the wafer to be tested until the needle mark of the central area of the wafer to be tested is in the target needle mark range, and obtaining the needle pressure of the central area of the wafer to be tested.
In one embodiment of the present invention, the second testing module 300 may be further specifically configured to obtain a difference between the acupressure of the central area of the wafer to be tested and the target acupressure, which is expressed as a second difference; and respectively calculating the sum of the acupressure of different areas on the acupressure distribution diagram and the second difference value, and obtaining acupressure of other areas of the wafer to be tested so as to finish the electrical performance test of the wafer to be tested.
In one embodiment of the present invention, the third testing module 400 may be configured to perform fitting on the tested wafer according to a functional relationship between the serial number of the tested wafer and the acupressure of the central area of the tested wafer, so as to obtain a fitted acupressure of the central area of the untested wafer; and obtaining the difference between the fitting acupressure of the untested wafer and the target acupressure, and calculating acupressure of other areas of the untested wafer according to the acupressure distribution diagram and the difference so as to complete the electrical performance test of the untested wafer.
In one embodiment of the present invention, the third testing module 400 may be specifically configured to obtain a difference between the fitted acupressure of the untested wafer and the target acupressure, which is denoted as a third difference; and respectively calculating the sum of the acupressure of different areas on the acupressure distribution diagram and the third difference value to obtain acupressure of other areas of the wafer which is not tested so as to finish the electrical performance test of the wafer to be tested.
For specific limitations of the wafer test apparatus of the probe station, reference may be made to the above limitations of the wafer test method of the probe station, and no further description is given here. The various modules in the wafer test apparatus of the probe station described above may be implemented in whole or in part by software, hardware, and combinations thereof. The above modules may be embedded in hardware or may be independent of a processor in the computer device, or may be stored in software in a memory in the computer device, so that the processor may call and execute operations corresponding to the above modules.
The invention also provides a computer device comprising a processor, a memory, a network interface and a database connected by a system bus. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes non-volatile and/or volatile storage media and internal memory. The non-volatile storage medium stores an operating system, computer programs, and a database. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The network interface of the computer device is for communicating with an external client via a network connection. The computer program, when executed by a processor, performs the functions or steps of the wafer test method of the probe station.
In one embodiment of the invention, a computer device may include a memory, a processor, and a computer program stored on the memory and executable on the processor, the processor implementing the steps of:
acquiring a target needle pressure and a corresponding target needle mark range of a central area of a first wafer in the wafer conveying box;
performing electrical performance test on other areas of the first wafer according to the target acupressure to obtain corresponding acupoints;
adjusting needle marks of other areas of the first wafer until reaching a target needle mark range, and acquiring needle pressure distribution diagrams of the needle pressures of the different areas of the first wafer;
acquiring a plurality of wafers to be tested according to preset conditions, and performing electrical performance test on the central area of the wafers to be tested according to target acupressure to acquire the acupoints of the central area of the wafers to be tested;
adjusting the needle mark of the central area of the wafer to be tested until reaching the target needle mark range, and obtaining the corresponding needle pressure;
acquiring a difference value between the acupressure of the central area of the wafer to be tested and the target acupressure, and calculating acupressure of other areas of the wafer to be tested according to the acupressure distribution diagram and the difference value so as to finish the electrical performance test of the wafer to be tested;
Fitting the serial number of the tested wafer according to the functional relation of the serial number of the tested wafer and the acupressure of the central area of the tested wafer to obtain the fitted acupressure of the central area of the untested wafer;
and obtaining the difference between the fitting acupressure of the untested wafer and the target acupressure, and calculating acupressure of other areas of the untested wafer according to the acupressure distribution diagram and the difference so as to complete the electrical performance test of the untested wafer.
It should be noted that, the functions or steps that can be implemented by the computer readable storage medium or the computer device may correspond to those described in the foregoing method embodiments, and are not described herein for avoiding repetition.
Those skilled in the art will appreciate that implementing all or part of the above-described methods in accordance with the embodiments may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed may comprise the steps of the embodiments of the methods described above. Any reference to memory, storage, database, or other medium used in the various embodiments provided herein may include non-volatile and/or volatile memory. The nonvolatile memory can include Read Only Memory (ROM), programmable ROM (PROM), electrically Programmable ROM (EPROM), electrically Erasable Programmable ROM (EEPROM), or flash memory. Volatile memory can include Random Access Memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in a variety of forms such as Static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double Data Rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous Link DRAM (SLDRAM), memory bus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM), among others.
The embodiments of the invention disclosed above are intended only to help illustrate the invention. The examples are not intended to be exhaustive or to limit the invention to the precise forms disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best understand and utilize the invention. The invention is limited only by the claims and the full scope and equivalents thereof.
Claims (10)
1. A method for testing a wafer on a probe station, comprising:
acquiring a target needle pressure and a corresponding target needle mark range of a central area of a first wafer in the wafer conveying box;
performing an electrical performance test on other areas of the first wafer according to the target acupressure to obtain corresponding acupoints;
adjusting needle marks of other areas of the first wafer until the target needle mark range is reached, and acquiring needle pressure distribution diagrams of the needle pressures of the different areas of the first wafer;
acquiring a plurality of wafers to be tested according to preset conditions, and performing electrical performance test on the central area of the wafers to be tested according to the target acupressure to acquire the acupoints of the central area of the wafers to be tested;
Adjusting the needle mark of the central area of the wafer to be tested until the target needle mark range is reached, and obtaining corresponding needle pressure;
acquiring a difference value between the acupressure of the central area of the wafer to be tested and the target acupressure, and calculating acupressure of other areas of the wafer to be tested according to the acupressure distribution diagram and the difference value so as to complete the electrical performance test of the wafer to be tested;
fitting the serial number of the tested wafer according to the functional relation of the serial number of the tested wafer and the acupressure of the central area of the tested wafer to obtain the fitted acupressure of the central area of the untested wafer;
and obtaining a difference value between the fitting acupressure of the untested wafer and the target acupressure, and calculating acupressure of other areas of the untested wafer according to the acupressure distribution diagram and the difference value so as to complete electrical performance test of the untested wafer.
2. The method of claim 1, wherein the step of obtaining the target acupressure and the corresponding target acupressure range of the center region of the first wafer in the wafer cassette comprises:
acquiring a wafer transfer box, wherein a plurality of wafers to be tested are stored in the wafer transfer box;
acquiring a first wafer, and performing an electrical performance test on a central area of the first wafer to form a needle mark on the central area of the first wafer;
And setting target acupressure according to the acupoints of the central area of the first wafer, and setting a target acupressure range.
3. The method for testing a wafer on a probe station according to claim 1, wherein the step of adjusting the needle mark of the other area of the first wafer until the target needle mark range is reached, and obtaining the needle pressure distribution map of the needle pressure of the other area of the first wafer comprises:
judging whether the needle marks of other areas of the first wafer are within the target needle mark range or not;
if the needle mark of a certain area of the first wafer is within the target needle mark range, the needle pressure of the certain area of the first wafer is the same as the target needle pressure;
if the needle mark of a certain area of the first wafer is not in the target needle mark range, acquiring a difference value between the needle mark of the area and a preset target needle mark, and representing the difference value as a first difference value;
repeating the electrical performance test on a certain area of the first wafer until the needle mark on the certain area of the first wafer is within the target needle mark range, and acquiring the needle pressure of the certain area of the first wafer;
And fitting the first wafer according to the functional relation between the acupressure of a certain area of the first wafer and the first difference value to obtain acupressure distribution diagrams of different areas on the first wafer and acupressure of the first wafer.
4. The method for testing a wafer on a probe station according to claim 1, wherein the step of adjusting the needle mark of the central area of the wafer to be tested until the target needle mark range is reached, and obtaining the corresponding needle pressure comprises:
judging whether the needle mark of the central area of the wafer to be tested is within the target needle mark range;
if the needle mark of the central area of the wafer to be detected is within the target needle mark range, the needle pressure of the central area of the wafer to be detected is the same as the target needle pressure;
and if the needle mark of the central area of the wafer to be tested is not in the target needle mark range, repeating the electrical performance test on the central area of the wafer to be tested until the needle mark of the central area of the wafer to be tested is in the target needle mark range, and obtaining the needle pressure of the central area of the wafer to be tested.
5. The method for testing a wafer on a probe station according to claim 1, wherein the step of obtaining a difference between the acupressure of the central area of the wafer to be tested and the target acupressure and calculating acupressure of other areas of the wafer to be tested according to the acupressure distribution map and the difference to complete the electrical performance test of the wafer to be tested comprises:
Acquiring a difference value between the needle pressure of the central area of the wafer to be detected and the target needle pressure, wherein the difference value is expressed as a second difference value;
and respectively calculating the sum of the acupressure of different areas on the acupressure distribution diagram and the second difference value, and obtaining acupressure of other areas of the wafer to be tested so as to finish the electrical property test of the wafer to be tested.
6. The method according to claim 1, wherein the step of obtaining a difference between the fitted acupressure of the untested wafer and the target acupressure, and calculating acupressure of other areas of the untested wafer according to the acupressure distribution map and the difference, to complete the electrical performance test of the untested wafer comprises:
obtaining a difference value between the fitting acupressure of the untested wafer and the target acupressure, and representing the difference value as a third difference value;
and respectively calculating the sum of the acupressure of different areas on the acupressure distribution diagram and the third difference value, and obtaining acupressure of other areas of the untested wafer so as to finish the electrical property test of the wafer to be tested.
7. The method for testing a wafer on a probe station according to claim 1, wherein the area of the central area of the first wafer is the same as the area of the other areas, and the preset condition is expressed as: and selecting a plurality of wafers to be tested at intervals according to the numbers of the wafers to be tested in the wafer conveying box.
8. A wafer testing apparatus for a probe station, comprising:
the data setting module is used for acquiring the target needle pressure of the central area of the first wafer in the wafer conveying box and the corresponding target needle mark range;
the first testing module is used for testing the electrical properties of other areas of the first wafer according to the target needle pressure so as to obtain corresponding needle marks, adjusting the needle marks of other areas of the first wafer until reaching the target needle mark range, and obtaining a needle pressure distribution diagram of the needle pressure of the other areas of the first wafer;
the second testing module is used for acquiring a plurality of wafers to be tested according to preset conditions, carrying out electrical performance testing on the central area of the wafers to be tested according to the target acupressure to acquire acupoints of the central area of the wafers to be tested, adjusting the acupoints of the central area of the wafers to be tested until reaching the target acupoints range, acquiring corresponding acupoints, acquiring the difference between the acupoints of the central area of the wafers to be tested and the target acupoints, and calculating acupoints of other areas of the wafers to be tested according to the acupoints distribution map and the difference to finish the electrical performance testing of the wafers to be tested; and
And the third testing module is used for fitting the serial number of the tested wafer according to the functional relation of the needle pressure of the central area of the tested wafer, obtaining the fitted needle pressure of the central area of the untested wafer, obtaining the difference value between the fitted needle pressure of the untested wafer and the target needle pressure, and calculating the needle pressures of other areas of the untested wafer according to the needle pressure distribution diagram and the difference value so as to finish the electrical property test of the untested wafer.
9. A computer device comprising a memory, a processor and a computer program stored in the memory and executable on the processor, characterized in that the processor, when executing the computer program, carries out the steps of the wafer test method of the probe station according to any of claims 1 to 7.
10. A computer readable storage medium storing a computer program, characterized in that the computer program when executed by a processor implements the steps of the wafer testing method of a probe station according to any of claims 1 to 7.
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