CN117702282A - Preparation method of semi-insulating silicon carbide, wafer and semiconductor device - Google Patents
Preparation method of semi-insulating silicon carbide, wafer and semiconductor device Download PDFInfo
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- CN117702282A CN117702282A CN202311705692.5A CN202311705692A CN117702282A CN 117702282 A CN117702282 A CN 117702282A CN 202311705692 A CN202311705692 A CN 202311705692A CN 117702282 A CN117702282 A CN 117702282A
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- silicon carbide
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- carbide wafer
- insulating silicon
- wafer
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 86
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 238000000034 method Methods 0.000 claims description 20
- 230000007547 defect Effects 0.000 claims description 16
- 238000000137 annealing Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 125000004429 atom Chemical group 0.000 description 11
- 229910052720 vanadium Inorganic materials 0.000 description 6
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000001052 transient effect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/326—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Thermal Sciences (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention relates to the technical field of semiconductor processing, and provides a preparation method of semi-insulating silicon carbide, a wafer and a semiconductor device.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a preparation method of semi-insulating silicon carbide, a wafer and a semiconductor device.
Background
The existing method for forming the semi-insulating silicon carbide wafer can form the semi-insulating silicon carbide by doping V (vanadium) element, but the semi-insulating silicon carbide doped with V (vanadium) element has the defect that the doping concentration of V (vanadium) needs to be accurately controlled, if the doping concentration of V (vanadium) is too low, the ideal semi-insulating characteristic effect cannot be achieved, and if the doping concentration of V (vanadium) element is too high, precipitates containing V are easily caused, so that micropipe defects are generated in the semi-insulating silicon carbide material. And another disadvantage of the semi-insulating silicon carbide doped with the V element is that the doping depth of the V element is not necessarily deep, resulting in uneven longitudinal resistance distribution of the silicon carbide wafer and poor longitudinal semi-insulating properties.
Other modes such as point defect type directly generated by electron irradiation are simpler, so that the thermal stability is poor, and the resistivity of a sample after the electron irradiation is still reduced to 10 after the annealing at 1400 DEG C 5 Omega cm or less deteriorates semi-insulating properties of silicon carbide.
Disclosure of Invention
The invention aims to solve the problem of poor effect of the existing method for preparing semi-insulating silicon carbide, and provides a preparation method of the semi-insulating silicon carbide, a wafer and a semiconductor device.
In order to achieve the above object, the present invention provides a method for preparing semi-insulating silicon carbide, comprising:
providing a silicon carbide wafer;
at least one electrode is respectively arranged on the upper surface and the lower surface of the silicon carbide wafer;
and applying high-frequency high-voltage pulse to the electrode to displace part of atoms in the silicon carbide wafer, and forming vacancies and complex point defects in the silicon carbide wafer to obtain the semi-insulating silicon carbide wafer.
As an implementation mode, the voltage range of the high-frequency high-voltage electric pulse is 1000V-8000V, the pulse width range is 0.1us-3us, the pulse repetition frequency range is 300Hz-2000Hz, and the application time range of the high-frequency high-voltage electric pulse is 3min-30min.
As one implementation mode, the number of the electrodes is two, and the two electrodes are respectively positioned on the upper surface and the lower surface of the silicon carbide wafer.
As an embodiment, the distance between the two electrodes is the thickness of the silicon carbide wafer, and the thickness of the silicon carbide wafer ranges from 300 μm to 400 μm.
As an embodiment, the material of the electrode is metal.
As one embodiment, the contact area between each electrode and the surface of the silicon carbide wafer is 1cm 2 -30 cm 2 。
As one embodiment, the silicon carbide wafer has a resistivity in the range of 10 2 Ω·cm-10 5 Omega cm, the resistivity of the semi-insulating silicon carbide wafer is 10 11 Omega cm or more.
As an embodiment, further comprising: and annealing the formed semi-insulating silicon carbide wafer by using a preset annealing temperature so as to eliminate unstable defects.
Correspondingly, the invention also provides a semi-insulating silicon carbide wafer prepared by the preparation method of the semi-insulating silicon carbide.
Correspondingly, the invention also provides a semiconductor device comprising the semi-insulating silicon carbide wafer prepared by the preparation method of the semi-insulating silicon carbide.
The invention has the beneficial effects that: the invention provides a preparation method of semi-insulating silicon carbide, a wafer and a semiconductor device, wherein high-frequency high-voltage pulse is applied to an electrode arranged on the surface of the silicon carbide wafer, atoms in the silicon carbide wafer can be bombarded from different directions by utilizing transient characteristics and alternating current characteristics of high-frequency high voltage, and finally partial atoms in the silicon carbide wafer are displaced, so that vacancies and complex point defects are formed in the silicon carbide wafer, and the semi-insulating silicon carbide wafer with high resistivity and better stability is obtained through the carrier capturing effect of the deep energy level defects. Moreover, the longitudinal resistance of the semi-insulating silicon carbide wafer is uniformly distributed, so that the longitudinal semi-insulating property of the semi-insulating silicon carbide wafer can be improved.
Drawings
Fig. 1 is a schematic diagram illustrating steps of a method for preparing semi-insulating silicon carbide according to some embodiments of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, some embodiments of the present invention provide a method for preparing semi-insulating silicon carbide, including:
step S100, providing a silicon carbide wafer;
step 200, respectively arranging at least one electrode on the upper surface and the lower surface of the silicon carbide wafer; the method comprises the steps of carrying out a first treatment on the surface of the
And step S300, applying high-frequency high-voltage electric pulse to the electrode so as to displace atoms in the silicon carbide wafer, and forming vacancies and complex point defects in the silicon carbide wafer to obtain the semi-insulating silicon carbide wafer.
According to the embodiments of the invention, high-frequency high-voltage pulse is applied to the electrode arranged on the surface of the silicon carbide wafer, transient characteristics of high frequency and high voltage and alternating current characteristics are utilized, transient characteristics can generate transient strong impact force, the alternating current characteristics can enable atoms to be subjected to acting forces in left and right directions, the atoms are more favorable for being separated from the original positions, atoms in the silicon carbide wafer can be bombarded from different directions, finally, the atoms in the silicon carbide wafer are displaced, adjacent atoms are excited by an electric field to be separated from the original positions, a plurality of vacancies or inversions are left, so that vacancies and complex point defects are formed in the silicon carbide wafer, and a semi-insulating silicon carbide wafer with high resistivity and better stability is obtained through the carrier capturing effect of the deep energy level defects. Moreover, the longitudinal resistance of the semi-insulating silicon carbide wafer is uniformly distributed, so that the longitudinal semi-insulating property of the semi-insulating silicon carbide wafer can be improved, and the problem that the longitudinal resistance of the silicon carbide wafer is not uniformly distributed and the longitudinal semi-insulating property is poor due to the fact that the doping depth of V (vanadium) element is not necessarily deep is solved.
The method of high-frequency high-voltage electric pulse can shorten the processing time and form the semi-insulating silicon carbide wafer. The method of high-frequency high-voltage electric pulse can reduce the cost by more than 60 percent compared with the traditional method, and is more beneficial to industrialization.
Step S100 is performed:
in some embodiments, a purer silicon carbide wafer may be provided, while the initial resistivity of the silicon carbide wafer may generally be provided in the range of 10 2 Ω·cm-10 5 Omega cm, the silicon carbide wafer may have a thickness in the range of 300 μm to 400 μm.
Step S200 is performed:
in some embodiments, the number of the electrodes may be two, and the two electrodes are respectively located on the upper surface and the lower surface of the silicon carbide wafer, and the distance between the two electrodes is the thickness of the silicon carbide wafer. In some embodiments, the material of the electrode may be metal, in particular mercury electrode, and the electrode may be formed by electron beam evaporation. In some embodiments, the contact area between each electrode and the silicon carbide wafer surface may be in the range of 1cm 2 -30 cm 2 Can generate the electric field range and the electric fieldStrength.
Step S300 is performed:
in some embodiments, the high frequency high voltage pulse has a voltage range of 1000V-8000V, a pulse width range of 0.1us-3us, a pulse repetition frequency range of 300Hz-2000Hz, and an application time range of 3min-30min; so that the resistivity of the formed semi-insulating silicon carbide wafer is 10 11 Omega cm or more.
In some embodiments, the atom may be a silicon atom, or may be a carbon atom; the vacancies may be corresponding silicon vacancies and carbon vacancies; the complex point disadvantage may be a double vacancy.
In some embodiments, the steps after obtaining the semi-insulating silicon carbide wafer further comprise: and carrying out rapid annealing treatment on the semi-insulating silicon carbide wafer by using a preset annealing temperature so as to eliminate unstable defects. The predetermined annealing temperature ranges from 300 ℃ to 800 ℃. And because adjacent atoms are excited by an electric field to separate from the original positions after the high-frequency high-voltage pulse, a plurality of vacancies or inversions are left, the main types of defects are complex point defects, and the thermal stability is relatively high, so that the semi-insulating property can still be kept relatively good after high-temperature annealing. In some embodiments, the unstable defect may be, for example, a Si vacancy, and the annealing temperature may be 400 ℃ to 800 ℃ because the Si vacancy disappears above 400 ℃.
Correspondingly, some embodiments of the invention also provide a semi-insulating silicon carbide wafer prepared by the preparation method of the semi-insulating silicon carbide.
Correspondingly, the invention also provides a semiconductor device comprising the semi-insulating silicon carbide wafer prepared by the preparation method of the semi-insulating silicon carbide.
Although the present invention has been described with respect to the preferred embodiments, it is not intended to be limited thereto, and any person skilled in the art can make any possible variations and modifications to the technical solution of the present invention by using the methods and techniques disclosed herein without departing from the spirit and scope of the present invention.
Claims (10)
1. A method for preparing semi-insulating silicon carbide, comprising:
providing a silicon carbide wafer;
at least one electrode is respectively arranged on the upper surface and the lower surface of the silicon carbide wafer;
and applying high-frequency high-voltage pulse to the electrode to displace part of atoms in the silicon carbide wafer, and forming vacancies and complex point defects in the silicon carbide wafer to obtain the semi-insulating silicon carbide wafer.
2. The method for preparing semi-insulating silicon carbide according to claim 1, wherein the high-frequency high-voltage pulse has a voltage range of 1000V-8000V, a pulse width range of 0.1us-3us, a pulse repetition frequency range of 300Hz-2000Hz, and a time for applying the high-frequency high-voltage pulse is 3min-30min.
3. The method of claim 1, wherein the number of electrodes is two, and the two electrodes are respectively located on the upper surface and the lower surface of the silicon carbide wafer.
4. A method of preparing semi-insulating silicon carbide according to claim 3 wherein the distance between the two electrodes is the thickness of the silicon carbide wafer, which is in the range 300 μm to 400 μm.
5. The method of claim 1, wherein the electrode is made of metal.
6. The method for producing semi-insulating silicon carbide according to claim 1, which comprisesCharacterized in that the contact area between each electrode and the surface of the silicon carbide wafer is 1cm 2 -30cm 2 。
7. The method of claim 1, wherein the silicon carbide wafer has a resistivity in the range of 10 2 Ω·cm-10 5 Omega cm, the resistivity of the semi-insulating silicon carbide wafer is 10 11 Omega cm or more.
8. The method of preparing semi-insulating silicon carbide according to claim 1, further comprising:
and annealing the formed semi-insulating silicon carbide wafer by using a preset annealing temperature so as to eliminate unstable defects.
9. A semi-insulating silicon carbide wafer prepared by the method of any one of claims 1 to 8.
10. A semiconductor device comprising a semi-insulating silicon carbide wafer prepared by the method of preparing a semi-insulating silicon carbide according to any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311705692.5A CN117702282A (en) | 2023-12-12 | 2023-12-12 | Preparation method of semi-insulating silicon carbide, wafer and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311705692.5A CN117702282A (en) | 2023-12-12 | 2023-12-12 | Preparation method of semi-insulating silicon carbide, wafer and semiconductor device |
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| Publication Number | Publication Date |
|---|---|
| CN117702282A true CN117702282A (en) | 2024-03-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311705692.5A Pending CN117702282A (en) | 2023-12-12 | 2023-12-12 | Preparation method of semi-insulating silicon carbide, wafer and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117702282A (en) |
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2023
- 2023-12-12 CN CN202311705692.5A patent/CN117702282A/en active Pending
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