CN117702250A - Pressure release adjusting equipment for single crystal furnace - Google Patents
Pressure release adjusting equipment for single crystal furnace Download PDFInfo
- Publication number
- CN117702250A CN117702250A CN202311530683.7A CN202311530683A CN117702250A CN 117702250 A CN117702250 A CN 117702250A CN 202311530683 A CN202311530683 A CN 202311530683A CN 117702250 A CN117702250 A CN 117702250A
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- Prior art keywords
- furnace chamber
- fixedly connected
- chamber
- single crystal
- rod
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- 239000013078 crystal Substances 0.000 title claims abstract description 37
- 238000007789 sealing Methods 0.000 claims abstract description 22
- 238000009413 insulation Methods 0.000 claims description 23
- 238000003860 storage Methods 0.000 claims description 22
- 238000002791 soaking Methods 0.000 claims description 20
- 230000000670 limiting effect Effects 0.000 claims description 16
- 238000005086 pumping Methods 0.000 claims description 15
- 238000007790 scraping Methods 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000000498 cooling water Substances 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 56
- 239000011261 inert gas Substances 0.000 description 36
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 24
- 238000000034 method Methods 0.000 description 18
- 230000000694 effects Effects 0.000 description 7
- 238000004880 explosion Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention belongs to the technical field of single crystal furnaces, in particular to pressure relief adjusting equipment of a single crystal furnace, which comprises a main furnace chamber; the top surface of the main furnace chamber is fixedly connected with an auxiliary chamber; an upper furnace cylinder is arranged on the top surface of the auxiliary chamber; the auxiliary chamber is used for separating the main furnace chamber and the upper furnace cylinder; the bottom surface of the main furnace chamber is fixedly connected with a lower furnace chamber; a pair of exhaust holes are formed in the bottom surface of the main furnace chamber; a push rod is arranged in the exhaust hole; the bottom surface of the inner part of the lower furnace chamber is fixedly connected with a sleeve at a position corresponding to the ejector rod; the pressure sensor is arranged in the sleeve and connected with an external microcomputer for controlling an external air pressure component; the surface of the ejector rod is fixedly connected with a sealing ring; the gas in the main furnace chamber can squeeze the ejector rod, so that the ejector rod squeezes the gas in the sleeve, the internal pressure of the sleeve is increased, and after the internal pressure is detected by the pressure sensor, the exhaust hole is controlled to be opened, so that the gas which is proliferated in the main furnace chamber can be pumped into the lower furnace chamber, and the pressure relief of the main furnace chamber is completed.
Description
Technical Field
The invention belongs to the technical field of single crystal furnaces, and particularly relates to pressure relief adjusting equipment of a single crystal furnace.
Background
Photovoltaic panels are power generation devices that generate direct current when exposed to sunlight, and are made almost entirely of semiconductor materials, such as silicon, and are widely used as monocrystalline silicon solar panels, which are mainly made of monocrystalline silicon, and are mainly manufactured by using a monocrystalline furnace.
The single crystal furnace in the prior art is mainly divided into an upper furnace barrel, a partition chamber and a main furnace chamber, raw materials are heated in the main furnace chamber, a single crystal silicon rod is manufactured through a Czochralski method, then single crystals are pulled into the upper furnace barrel, the partition chamber is closed, the partition chamber is separated from the upper furnace barrel, the main furnace chamber is also closed, the upper furnace barrel is lifted, and the processed single crystal silicon rod is taken away.
In the prior art, inert gas is introduced into the single crystal furnace in the process of preparing the single crystal silicon rod by the Czochralski method, but the single crystal furnace still maintains a negative pressure state at the moment, and if other non-inert gases are mixed into the inert gas or more inert gases are introduced in the process of introducing the inert gas, the pressure in the single crystal furnace is increased, so that the preparation of the single crystal silicon rod is influenced, and even the explosion of the single crystal furnace is influenced.
Therefore, the invention provides pressure relief adjusting equipment for the single crystal furnace.
Disclosure of Invention
In order to overcome the deficiencies of the prior art, at least one technical problem presented in the background art is solved.
The technical scheme adopted for solving the technical problems is as follows: the invention relates to pressure relief regulating equipment for a single crystal furnace, which comprises a main furnace chamber; the top surface of the main furnace chamber is fixedly connected with an auxiliary chamber; an upper furnace cylinder is arranged on the top surface of the auxiliary chamber; the auxiliary chamber is used for separating the main furnace chamber from the upper furnace cylinder and can seal the top of the main furnace chamber; the bottom surface of the main furnace chamber is fixedly connected with a lower furnace chamber; a pair of exhaust holes are formed in the bottom surface of the main furnace chamber; a push rod is arranged in the exhaust hole; the bottom surface of the inner part of the lower furnace chamber is fixedly connected with a sleeve at a position corresponding to the ejector rod, and the sleeve is connected with an external air pressure assembly; the pressure sensor is arranged in the sleeve and connected with an external microcomputer for controlling an external air pressure component; the surface of the ejector rod is fixedly connected with a sealing ring; the external air pressure component is used for introducing air into the sleeve so as to push the ejector rod to move towards the main furnace chamber and enable the sealing ring on the surface of the ejector rod to seal the exhaust hole; the lower furnace chamber is connected with an external vacuum pump; when the single crystal silicon rod is manufactured by the single crystal furnace, in order to maintain the normal pressure in the single crystal furnace, the embodiment of the invention can be used, when the pressure in the single crystal furnace is normal, the external air pressure component pumps air into the sleeve, so that the ejector rod is pushed to the main furnace chamber along the exhaust hole, the sealing ring on the surface of the ejector rod is driven to the bottom of the exhaust hole, the bottom of the exhaust hole is plugged, the external vacuum pump is used for vacuumizing the lower furnace chamber, then the user can introduce inert gas into the main furnace chamber, the upper furnace barrel and the auxiliary chamber when performing the vertical pulling method for manufacturing the single crystal silicon rod, and in the process, if the user has misoperation, the excessive inert gas is caused, or the inert gas is not pure, other gases are mixed, the air is generated, the air is caused to react with raw materials in the main furnace chamber, the air pressure in the main furnace chamber is increased, the air in the main furnace chamber is further extruded by the ejector rod, the air in the sleeve is increased, the lower furnace chamber is detected by the sensor, signals are transmitted to the outside computer, and the air pressure in the main furnace chamber is controlled by the outside computer, the air pressure in the main furnace chamber is not influenced, and the pressure in the main furnace chamber is even the air chamber is not influenced, and the pressure is not influenced by the air pressure in the main furnace chamber is pumped into the micro-chamber, and the air chamber is completely.
Preferably, the inner wall of the exhaust hole is fixedly connected with a connecting plate; a limiting hole is formed in the middle of the connecting plate; the top surface of the ejector rod is rotationally connected with an extension rod, and the extension rod is in sliding connection with the limiting hole; when the ejector rod moves in the exhaust hole, the ejector rod can also drive the extension rod to move together, and because the extension rod can be always located in the limiting hole on the surface of the connecting plate and the limiting effect of the extension rod is achieved through the limiting hole, the extension rod is always located at the center axis position of the exhaust hole in the moving process, and the ejector rod is also enabled to move along the center axis of the exhaust pipe all the time due to the fact that the ejector rod is rotationally connected with the extension rod, the ejector rod is prevented from being pushed by gas in the furnace chamber, the ejector rod is enabled to shake in the moving process, gaps are formed between the ejector rod and the sleeve, and leakage of gas in the sleeve is caused.
Preferably, the surface of the extension rod is fixedly connected with a plurality of fan blades which are uniformly arranged; the surface of the extension rod is fixedly connected with a connecting rod at a position close to the bottom; the ends, far away from the ejector rods, of the two connecting rods are fixedly connected with scraping plates; when the gas in the main furnace chamber is discharged from the exhaust hole, the gas in the main furnace chamber can be blown to the fan blade on the surface of the extension rod, so that the extension rod is driven to rotate on the top surface of the ejector rod, the rotating extension rod drives the surface connecting rod and the scraping plate to rotate along the inner wall of the exhaust hole, and the scraping plate scrapes the inner wall of the exhaust hole, so that impurities sublimated at the exhaust hole are shoveled down, and the smoothness of the exhaust hole is ensured.
Preferably, one side of the lower furnace chamber is fixedly connected with a fixed conduit; an air storage tank is arranged at one end of the guide pipe far away from the lower furnace chamber; a pumping assembly is arranged in the air storage tank; the top of the pumping assembly is fixedly connected with a corrugated pipe; one end of the corrugated pipe, which is far away from the pumping assembly, is connected with the upper furnace cylinder; the pumping assembly pumps the gas in the lower furnace chamber into the gas storage tank, and pumps the gas in the gas storage tank into the upper furnace cylinder; when the device works, as excessive inert gas is introduced into the main furnace chamber, the ejector rod and the sealing ring are ejected away from the exhaust hole, so that the inert gas in the main furnace chamber can be pumped into the lower furnace chamber, and then the inert gas in the lower furnace chamber can be pumped into the gas storage tank by the pumping assembly, thereby realizing the recovery of the inert gas, and when the device needs to be reused, the inert gas in the gas storage tank can be pumped into the upper furnace cylinder through the corrugated pipe.
Preferably, one end of the guide pipe is fixedly connected with an air box, and two sides of the air box are soaking plates; the conduit is communicated with the inside of the gas tank; the top of the air box is communicated with the air storage tank; the two sides of the air box are fixedly connected with the cover shells, and the cover shells are connected with an external water circulation system; the external water circulation system is used for inputting cooling water into the housing; when the single crystal silicon rod is pulled into the upper furnace barrel, the auxiliary chamber is closed, the upper furnace barrel and the main furnace chamber are separated, and at the moment, the cooled inert gas can be introduced into the upper furnace barrel, so that the single crystal silicon rod is cooled, and the cooling time of the single crystal silicon rod can be shortened.
Preferably, a rotating rod is connected with the inner rotation of the housing; the surface of the rotating rod is fixedly connected with a plurality of flexible plates which are uniformly arranged; the rotating rod extends to the outside of the housing and is driven by an external motor; when the water circulation system works for a period of time, in order to reduce the influence of scale on the vapor chamber, a user can start the external motor, the external motor is provided with a rotating rod to rotate, the rotating rod can drive the flexible plate on the surface of the external motor to rotate together, and then the surface of the vapor chamber is scraped through the continuously rotating flexible plate to scrape the scale on the vapor chamber, so that the heat dissipation efficiency of the vapor chamber is ensured.
Preferably, one end of the flexible plate, which is close to the vapor chamber, is fixedly connected with a plurality of hairbrushes which are uniformly arranged; one end of the brush, which is far away from the flexible plate, is contacted with the surface of the soaking plate; when the working process is carried out, the brush on the bottom surface of the flexible plate can scrape the surface of the soaking plate when the flexible plate rotates under the drive of the rotating rod, so that the cleaning effect of the soaking plate is further improved.
Preferably, the bottom surface of the main furnace chamber is embedded with a heat insulation block at a position corresponding to the lower furnace chamber; a cavity is formed in the heat insulation block, and the cavity is vacuumized; when the main furnace chamber works, the cavity inside the heat insulation block is vacuumized, so that the main furnace chamber can be restrained from heating the lower furnace chamber through heat conduction and heat convection, the temperature inside the lower furnace chamber is further reduced, the pressure sensor in the lower furnace chamber is ensured to work at a proper temperature, and the service life of the pressure sensor is further ensured.
Preferably, one side of the heat insulation block is fixedly connected with an exhaust pipe; one end of the exhaust pipe, which is far away from the heat insulation block, is connected with an external exhaust pump; an electric valve is arranged in the exhaust pipe; during operation, in order to guarantee that the heat insulation block can be stable and insulate against heat for a long time, the user can open the motorised valve regularly to bleed through outside aspiration pump to the cavity inside, thereby guarantee the inside vacuum of cavity, with the thermal-insulated effect of assurance heat insulation block.
Preferably, the top surface of the sealing ring is fixedly connected with an arc-shaped bulge; the bottom of the exhaust hole is matched with the arc-shaped bulge; when the gas exhaust in the main furnace chamber is discharged to the exhaust hole, the sealing ring and the arc-shaped bulge are propped away from the exhaust hole, and the top surface of the arc-shaped bulge is arc-shaped, so that the gas exhausted from the exhaust hole can smoothly pass through the surface of the arc-shaped bulge, and the pressure release process is smooth.
The beneficial effects of the invention are as follows:
1. according to the pressure release adjusting device for the single crystal furnace, the ejector rod is extruded by the gas in the main furnace chamber, so that the ejector rod extrudes the gas in the sleeve, the internal pressure of the sleeve is increased, and after the pressure sensor detects the pressure, the external air pressure component is controlled to pump away a part of air in the sleeve, so that the air pressure in the sleeve is insufficient to support the quality of the ejector rod and the sealing ring, the vent hole is opened, the gas which is rapidly increased in the main furnace chamber can be pumped into the lower furnace chamber, the pressure release of the main furnace chamber is further completed, and the influence on the preparation of single crystal silicon and even the explosion of the single crystal furnace caused by the overlarge pressure in the main furnace chamber are avoided.
2. According to the pressure release adjusting device for the single crystal furnace, through the fan blades enabling the gas in the main furnace chamber to blow to the surfaces of the extension rods, the extension rods are driven to rotate on the top surfaces of the ejector rods, the rotating extension rods drive the surface connecting rods and the scraping plates to rotate along the inner walls of the exhaust holes, the scraping plates scrape the inner walls of the exhaust holes, and therefore impurities sublimated at the exhaust holes are shoveled down, and accordingly the smoothness of the exhaust holes is guaranteed.
Drawings
The invention is further described below with reference to the accompanying drawings.
FIG. 1 is a perspective view of the present invention;
FIG. 2 is a partial cross-sectional view of the primary furnace chamber of the present invention;
FIG. 3 is an enlarged view of a portion of FIG. 2 at B;
FIG. 4 is a schematic view of the structure of the flexible board of the present invention;
FIG. 5 is an enlarged view of a portion of FIG. 4 at C;
FIG. 6 is an enlarged view of a portion of FIG. 1 at A;
in the figure: 1. a main furnace chamber; 2. a sub-chamber; 3. feeding a furnace cylinder; 4. a lower furnace chamber; 5. an exhaust hole; 6. a push rod; 7. a sleeve; 8. a seal ring; 9. a connecting plate; 10. a limiting hole; 11. an extension rod; 12. a fan blade; 13. a connecting rod; 14. a scraper; 15. a conduit; 16. a gas storage tank; 17. a bellows; 18. an air box; 19. a housing; 20. a rotating lever; 21. a flexible board; 22. a brush; 23. a heat insulating block; 24. a cavity; 25. an exhaust pipe; 26. an electric valve; 27. arc-shaped protrusions.
Detailed Description
The invention is further described in connection with the following detailed description in order to make the technical means, the creation characteristics, the achievement of the purpose and the effect of the invention easy to understand.
As shown in fig. 1 to 3, the pressure release adjusting device for the single crystal furnace according to the embodiment of the invention comprises a main furnace chamber 1; the top surface of the main furnace chamber 1 is fixedly connected with an auxiliary chamber 2; an upper furnace cylinder 3 is arranged on the top surface of the auxiliary chamber 2; the auxiliary chamber 2 is used for separating the main furnace chamber 1 and the upper furnace cylinder 3, and can be used for plugging the top of the main furnace chamber 1; the bottom surface of the main furnace chamber 1 is fixedly connected with a lower furnace chamber 4; a pair of exhaust holes 5 are formed in the bottom surface of the main furnace chamber 1; a push rod 6 is arranged in the exhaust hole 5; the bottom surface inside the lower furnace chamber 4 is fixedly connected with a sleeve 7 at a position corresponding to the ejector rod 6, and the sleeve 7 is connected with an external air pressure component; the pressure sensor is arranged in the sleeve 7 and connected with an external microcomputer for controlling an external air pressure component; the surface of the ejector rod 6 is fixedly connected with a sealing ring 8; the external air pressure component is used for introducing air into the sleeve 7 so as to push the ejector rod 6 to move towards the main furnace chamber 1 and enable the sealing ring 8 on the surface of the ejector rod 6 to seal the exhaust hole 5; the lower furnace chamber 4 is connected with an external vacuum pump; when the single crystal silicon rod is manufactured by a single crystal furnace, in order to maintain the normal pressure in the single crystal furnace, the embodiment of the invention can be used, when the pressure in the single crystal furnace is normal, as the external air pressure component pumps air into the sleeve 7, the ejector rod 6 is ejected to the main furnace chamber 1 along the air outlet 5, the sealing ring 8 on the surface of the ejector rod 6 is driven to be ejected to the bottom of the air outlet 5, the bottom of the air outlet 5 is plugged, the external vacuum pump pumps the lower furnace chamber 4 to be vacuumized, then the inert gas is introduced into the main furnace chamber 1, the upper furnace cylinder 3 and the auxiliary chamber 2 when the user performs the Czochralski method to manufacture the single crystal silicon rod, if the operation errors of the user occur, the inert gas is too much to be introduced, or the inert gas is not pure, and other gases are mixed, the reaction with the raw materials in the main furnace chamber 1 is caused, gas is generated, the gas in the main furnace chamber 1 is increased, at the moment, the gas in the main furnace chamber 1 can extrude the ejector rod 6, the ejector rod 6 can extrude the gas in the sleeve 7, the internal pressure of the sleeve 7 is increased, the pressure sensor detects the pressure, after the signal is transmitted to an external microcomputer, the external microcomputer controls an external air pressure component to pump away a part of air in the sleeve 7, the air pressure in the sleeve 7 is insufficient to support the mass of the ejector rod 6 and the sealing ring 8, so that the exhaust hole 5 is opened, the gas which is increased in the main furnace chamber 1 is pumped into the lower furnace chamber 4, the pressure relief of the main furnace chamber 1 is finished, and the influence on the preparation of monocrystalline silicon and even the explosion of the monocrystalline furnace caused by the overlarge pressure in the main furnace chamber 1 are avoided.
As shown in fig. 2 to 3, a connecting plate 9 is fixedly connected to the inner wall of the exhaust hole 5; a limiting hole 10 is formed in the middle of the connecting plate 9; the top surface of the ejector rod 6 is rotatably connected with an extension rod 11, and the extension rod 11 is in sliding connection with the limiting hole 10; when the ejector rod 6 moves in the exhaust hole 5, the ejector rod 6 can also drive the extension rod 11 to move together, and because the extension rod 11 can be always positioned in the limiting hole 10 on the surface of the connecting plate 9 and the limiting effect of the extension rod 11 is achieved through the limiting hole 10, the extension rod 11 is always positioned at the center axis position of the exhaust hole 5 in the moving process, and the ejector rod 6 is also rotationally connected with the extension rod 11, so that the ejector rod 6 always moves along the center axis of the exhaust pipe, the pushing of gas in a furnace chamber is avoided, the ejector rod 6 is rocked in the moving process, a gap is formed between the ejector rod 6 and the sleeve 7, and gas in the sleeve 7 is leaked.
As shown in fig. 3, the surface of the extension rod 11 is fixedly connected with a plurality of fan blades 12 which are uniformly arranged; the surface of the extension rod 11 is fixedly connected with a connecting rod 13 at a position close to the bottom; the ends of the two connecting rods 13, which are far away from the ejector rod 6, are fixedly connected with scraping plates 14; when the gas in the main furnace chamber 1 is discharged from the exhaust hole 5 during operation, the gas in the main furnace chamber 1 is blown to the fan blades 12 on the surface of the extension rod 11, so that the extension rod 11 is driven to rotate on the top surface of the ejector rod 6, the rotating extension rod 11 drives the surface connecting rod 13 and the scraping plate 14 to rotate along the inner wall of the exhaust hole 5, and the scraping plate 14 scrapes the inner wall of the exhaust hole 5, so that some impurities sublimated at the exhaust hole 5 are shoveled down, and the smoothness of the exhaust hole 5 is ensured.
As shown in fig. 1 to 2, a fixed conduit 15 is fixedly connected to one side of the lower furnace chamber 4; the end of the conduit 15, which is far away from the lower furnace chamber 4, is provided with a gas storage tank 16; a pumping assembly is arranged in the air storage tank 16; the top of the pumping assembly is fixedly connected with a corrugated pipe 17; one end of the corrugated pipe 17, which is far away from the pumping assembly, is connected with the upper furnace cylinder 3; the pumping assembly pumps the gas in the lower furnace chamber 4 into the gas storage tank 16, and pumps the gas in the gas storage tank 16 into the upper furnace cylinder 3 again; when the device works, as excessive inert gas is introduced into the main furnace chamber 1, the ejector rod 6 and the sealing ring 8 are ejected away from the exhaust hole 5, so that the inert gas in the main furnace chamber 1 can be pumped into the lower furnace chamber 4, and then the inert gas in the lower furnace chamber 4 can be pumped into the gas storage tank 16 by the pumping assembly, so that the recovery of the inert gas is realized, and when the device needs to be reused, the inert gas in the gas storage tank 16 can be pumped into the upper furnace cylinder 3 through the corrugated pipe 17.
As shown in fig. 1, 2 and 4, one end of the conduit 15 is fixedly connected with an air box 18, and two sides of the air box 18 are soaking plates; the conduit 15 is communicated with the inside of the air box 18; the top of the air box 18 is communicated with the air storage tank 16; the two sides of the air box 18 are fixedly connected with the cover shell 19, and the cover shell 19 is connected with an external water circulation system; the external water circulation system is used for inputting cooling water into the housing 19; when the single crystal silicon rod is pulled into the upper furnace barrel 3, the auxiliary chamber 2 is closed, the upper furnace barrel 3 is separated from the main furnace chamber 1, and at the moment, the cooled inert gas can be introduced into the upper furnace barrel 3, so that the single crystal silicon rod is cooled, and the cooling time of the single crystal silicon rod can be shortened.
As shown in fig. 2 and 4, a rotating rod 20 is connected to the inner rotation of the cover 19; a plurality of flexible plates 21 which are uniformly arranged are fixedly connected to the surface of the rotating rod 20; the rotating rod 20 extends to the outside of the housing 19 and is driven by an external motor; when the water circulation system works for a period of time, in order to reduce the influence of scale on the soaking plate, a user can start an external motor, the external motor is provided with a rotating rod 20 to rotate, the rotating rod 20 drives a flexible plate 21 on the surface of the rotating rod to rotate together, and then the surface of the soaking plate is scraped through the flexible plate 21 which continuously rotates to scrape the scale on the soaking plate, so that the heat dissipation efficiency of the soaking plate is guaranteed.
As shown in fig. 4 to 5, one end of the flexible plate 21, which is close to the vapor chamber, is fixedly connected with a plurality of uniformly arranged hairbrushes 22; one end of the brush 22, which is far away from the flexible plate 21, is contacted with the surface of the soaking plate; when the flexible plate 21 rotates under the drive of the rotating rod 20 during operation, the hairbrushes 22 on the bottom surface of the flexible plate 21 scratch the surface of the soaking plate, so that the cleaning effect on the soaking plate is further improved.
As shown in fig. 2, a heat insulation block 23 is inlaid at a position corresponding to the lower furnace chamber 4 on the bottom surface of the main furnace chamber 1; a cavity 24 is formed in the heat insulation block 23, and the interior of the cavity 24 is vacuumized; when the main furnace chamber 1 works, the cavity 24 in the heat insulation block 23 is vacuumized, so that the main furnace chamber 1 can be restrained from heating the lower furnace chamber 4 through heat conduction and heat convection, the temperature in the lower furnace chamber 4 is further reduced, the pressure sensor in the lower furnace chamber 4 is ensured to work at a proper temperature, and the service life of the pressure sensor is further ensured.
As shown in fig. 1 and 6, an exhaust pipe 25 is fixedly connected to one side of the heat insulation block 23; one end of the air extraction pipe 25, which is far away from the heat insulation block 23, is connected with an external air extraction pump; an electric valve 26 is arranged in the exhaust pipe 25; in order to ensure that the heat insulation block 23 can be used for stably insulating heat for a long time, a user can open the electric valve 26 at regular time and exhaust air from the cavity 24 through the external air exhaust pump, so that the vacuum degree in the cavity 24 is ensured, and the heat insulation effect of the heat insulation block 23 is ensured.
As shown in fig. 3, the top surface of the sealing ring 8 is fixedly connected with an arc-shaped protrusion 27; the bottom of the exhaust hole 5 is matched with the arc-shaped bulge 27; when the gas in the main furnace chamber 1 is discharged to the exhaust hole 5 in operation, the sealing ring 8 and the arc-shaped bulge 27 are propped away from the exhaust hole 5, and the top surface of the arc-shaped bulge 27 is arc-shaped, so that the gas exhausted from the exhaust hole 5 can smoothly pass through the surface of the arc-shaped bulge 27, and the pressure release process is smoother.
When the single crystal silicon rod is manufactured by a single crystal furnace, in order to maintain the normal pressure in the single crystal furnace, the embodiment of the invention can be used, when the pressure in the single crystal furnace is normal, as the external air pressure component pumps air into the sleeve 7, the ejector rod 6 is ejected to the main furnace chamber 1 along the air outlet 5, the sealing ring 8 on the surface of the ejector rod 6 is driven to be ejected to the bottom of the air outlet 5, the bottom of the air outlet 5 is plugged, the external vacuum pump pumps the lower furnace chamber 4 to be vacuumized, then the inert gas is introduced into the main furnace chamber 1, the upper furnace cylinder 3 and the auxiliary chamber 2 when the user performs the Czochralski method to manufacture the single crystal silicon rod, if the operation errors of the user occur, the inert gas is too much to be introduced, or the inert gas is not pure, and other gases are mixed, the reaction with the raw materials in the main furnace chamber 1 is caused, gas is generated, the gas in the main furnace chamber 1 is increased, at the moment, the gas in the main furnace chamber 1 can extrude the ejector rod 6, the ejector rod 6 can extrude the gas in the sleeve 7, the internal pressure of the sleeve 7 is increased, the pressure sensor detects the pressure, after the signal is transmitted to an external microcomputer, the external microcomputer controls an external air pressure component to pump away a part of air in the sleeve 7, the air pressure in the sleeve 7 is insufficient to support the mass of the ejector rod 6 and the sealing ring 8, so that the exhaust hole 5 is opened, the gas which is increased in the main furnace chamber 1 is pumped into the lower furnace chamber 4, the pressure relief of the main furnace chamber 1 is finished, and the influence on the preparation of monocrystalline silicon and even the explosion of the monocrystalline furnace caused by the overlarge pressure in the main furnace chamber 1 are avoided.
When the ejector rod 6 moves in the exhaust hole 5, the ejector rod 6 also drives the extension rod 11 to move together, and because the extension rod 11 is always positioned in the limiting hole 10 on the surface of the connecting plate 9 and the limiting effect of the limiting hole 10 on the extension rod 11 is achieved, the extension rod 11 is always positioned at the center axis position of the exhaust hole 5 in the moving process, and because the ejector rod 6 is rotationally connected with the extension rod 11, the ejector rod 6 also always moves along the center axis of the exhaust pipe, the ejector rod 6 is prevented from shaking in the moving process under the pushing of gas in the furnace chamber, gaps are formed between the ejector rod 6 and the sleeve 7, and gas in the sleeve 7 is leaked.
When the gas in the main furnace chamber 1 is discharged from the exhaust hole 5, the gas in the main furnace chamber 1 is blown to the fan blades 12 on the surface of the extension rod 11, so that the extension rod 11 is driven to rotate on the top surface of the ejector rod 6, the rotating extension rod 11 drives the surface connecting rod 13 and the scraping plate 14 to rotate along the inner wall of the exhaust hole 5, and the scraping plate 14 scrapes the inner wall of the exhaust hole 5, so that some impurities sublimated at the exhaust hole 5 are shoveled off, and the smoothness of the exhaust hole 5 is ensured.
When excessive inert gas is introduced into the main furnace chamber 1, the ejector rod 6 and the sealing ring 8 are ejected away from the exhaust hole 5, so that the inert gas in the main furnace chamber 1 can be pumped into the lower furnace chamber 4, and then the inert gas in the lower furnace chamber 4 is pumped into the gas storage tank 16 by the pumping assembly, so that the recovery of the inert gas is realized, and when the inert gas needs to be reused, the inert gas in the gas storage tank 16 can be pumped into the upper furnace cylinder 3 through the corrugated pipe 17.
When inert gas is pumped into the guide pipe 15, the guide pipe 15 guides the inert gas into the gas box 18, at the moment, cooling water is continuously pumped into the covers 19 at the two sides of the gas box 18 by an external water circulation system, then heat of the gas in the gas box 18 is transferred into the cooling water in the covers 19 through the vapor chamber, so that heat dissipation of the inert gas is completed, when the monocrystalline silicon rod is pulled into the upper furnace barrel 3, the auxiliary chamber 2 is closed, the upper furnace barrel 3 is separated from the main furnace chamber 1, and at the moment, cooled inert gas can be introduced into the upper furnace barrel 3, so that the monocrystalline silicon rod is cooled, and the cooling time of the monocrystalline silicon rod can be shortened.
After the water circulation system works for a period of time, in order to reduce the influence of scale on the soaking plate, a user can start an external motor, the external motor is provided with a rotating rod 20 to rotate, the rotating rod 20 drives a flexible plate 21 on the surface of the rotating rod to rotate together, and then the surface of the soaking plate is scraped through the continuously rotating flexible plate 21 to scrape the scale on the soaking plate, so that the heat dissipation efficiency of the soaking plate is guaranteed.
When the flexible plate 21 rotates under the drive of the rotating rod 20, the brush 22 on the bottom surface of the flexible plate 21 scratches the surface of the soaking plate, so that the cleaning effect of the soaking plate is further improved.
When the main furnace chamber 1 works, the cavity 24 in the heat insulation block 23 is vacuumized, so that the main furnace chamber 1 can be restrained from heating the lower furnace chamber 4 through heat conduction and heat convection, the temperature in the lower furnace chamber 4 is further reduced, the pressure sensor in the lower furnace chamber 4 is ensured to work at a proper temperature, and the service life of the pressure sensor is further ensured.
In order to ensure that the heat insulation block 23 can stably insulate heat for a long time, a user can open the electric valve 26 at regular time and pump air out of the cavity 24 through the external air pump, so that the vacuum degree of the cavity 24 is ensured, and the heat insulation effect of the heat insulation block 23 is ensured.
When the gas in the main furnace chamber 1 is discharged to the exhaust hole 5, the sealing ring 8 and the arc-shaped bulge 27 are propped away from the exhaust hole 5, and the top surface of the arc-shaped bulge 27 is arc-shaped, so that the gas exhausted from the exhaust hole 5 can smoothly pass through the surface of the arc-shaped bulge 27, and the pressure release process is smoother.
The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present invention, and various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined in the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. A single crystal growing furnace pressure release governing device, its characterized in that: comprises a main furnace chamber (1); the top surface of the main furnace chamber (1) is fixedly connected with an auxiliary chamber (2); an upper furnace cylinder (3) is arranged on the top surface of the auxiliary chamber (2); the auxiliary chamber (2) is used for separating the main furnace chamber (1) and the upper furnace cylinder (3), and can be used for plugging the top of the main furnace chamber (1); the bottom surface of the main furnace chamber (1) is fixedly connected with a lower furnace chamber (4); a pair of exhaust holes (5) are formed in the bottom surface of the main furnace chamber (1); a push rod (6) is arranged in the exhaust hole (5); the bottom surface inside the lower furnace chamber (4) is fixedly connected with a sleeve (7) at a position corresponding to the ejector rod (6), and the sleeve (7) is connected with an external air pressure component; the pressure sensor is arranged in the sleeve (7) and connected with an external microcomputer for controlling an external air pressure component; the surface of the ejector rod (6) is fixedly connected with a sealing ring (8); the external air pressure component is used for introducing air into the sleeve (7), so as to push the ejector rod (6) to move towards the main furnace chamber (1) and enable the sealing ring (8) on the surface of the ejector rod (6) to seal the exhaust hole (5); the lower furnace chamber (4) is connected with an external vacuum pump.
2. The single crystal furnace pressure relief and adjustment device according to claim 1, wherein: a connecting plate (9) is fixedly connected to the inner wall of the exhaust hole (5); a limiting hole (10) is formed in the middle of the connecting plate (9); the top surface of the ejector rod (6) is rotatably connected with an extension rod (11), and the extension rod (11) is in sliding connection with the limiting hole (10).
3. The single crystal furnace pressure relief and adjustment device according to claim 2, wherein: the surface of the extension rod (11) is fixedly connected with a plurality of fan blades (12) which are uniformly arranged; the surface of the extension rod (11) is fixedly connected with a connecting rod (13) at a position close to the bottom; the ends of the two connecting rods (13) far away from the ejector rod (6) are fixedly connected with scraping plates (14).
4. The single crystal furnace pressure relief and adjustment device according to claim 1, wherein: one side of the lower furnace chamber (4) is fixedly connected with a fixed conduit (15); one end of the guide pipe (15) far away from the lower furnace chamber (4) is provided with a gas storage tank (16); a pumping assembly is arranged in the air storage tank (16); the top of the pumping assembly is fixedly connected with a corrugated pipe (17); one end of the corrugated pipe (17) far away from the pumping assembly is connected with the upper furnace cylinder (3); the pumping assembly pumps the gas in the lower furnace chamber (4) into the gas storage tank (16), and pumps the gas in the gas storage tank (16) into the upper furnace cylinder (3).
5. The single crystal growing furnace pressure release adjusting device according to claim 4, wherein: one end of the guide pipe (15) is fixedly connected with an air box (18), and two sides of the air box (18) are soaking plates; the conduit (15) is communicated with the inside of the air box (18); the top of the air box (18) is communicated with the air storage tank (16); the two sides of the air box (18) are fixedly connected with the cover shell (19), and the cover shell (19) is connected with an external water circulation system; the external water circulation system is used for inputting cooling water into the housing (19).
6. The single crystal growing furnace pressure release adjusting device according to claim 5, wherein: a rotating rod (20) is connected with the inner rotation of the housing (19); the surface of the rotating rod (20) is fixedly connected with a plurality of flexible plates (21) which are uniformly arranged; the rotating rod (20) extends outside the housing (19) and is driven by an external motor.
7. The single crystal furnace pressure relief and adjustment device according to claim 6, wherein: one end of the flexible plate (21) close to the vapor chamber is fixedly connected with a plurality of hairbrushes (22) which are uniformly arranged; one end of the brush (22) far away from the flexible plate (21) is contacted with the surface of the soaking plate.
8. The single crystal furnace pressure relief and adjustment device according to claim 1, wherein: the bottom surface of the main furnace chamber (1) is embedded with a heat insulation block (23) at a position corresponding to the lower furnace chamber (4); a cavity (24) is formed in the heat insulation block (23), and the interior of the cavity (24) is vacuumized.
9. The single crystal growing furnace pressure release adjusting device according to claim 8, wherein: an exhaust pipe (25) is fixedly connected to one side of the heat insulation block (23); one end of the air extraction pipe (25) far away from the heat insulation block (23) is connected with an external air extraction pump; an electric valve (26) is arranged in the exhaust pipe (25).
10. The single crystal furnace pressure relief and adjustment device according to claim 9, wherein: the top surface of the sealing ring (8) is fixedly connected with an arc-shaped bulge (27); the bottom of the exhaust hole (5) is matched with the arc-shaped bulge (27).
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| CN217203066U (en) * | 2021-12-29 | 2022-08-16 | 晶科能源股份有限公司 | Cooling circulation pipeline and single crystal furnace with cooling circulation group |
| CN115652424A (en) * | 2022-11-13 | 2023-01-31 | 芯朋半导体科技(如东)有限公司 | Furnace body exhaust device of semiconductor equipment |
| CN219454796U (en) * | 2022-11-17 | 2023-08-01 | 陕西海风热能科技有限公司 | Waste heat recovery device of boiler |
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2023
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| GB2076941A (en) * | 1980-05-23 | 1981-12-09 | Asulab Ag | Flow regulating valve |
| CN2890098Y (en) * | 2005-12-26 | 2007-04-18 | 北京有色金属研究总院 | CZ-Si single crystal furnace with post oxidation device |
| CN210367996U (en) * | 2019-06-18 | 2020-04-21 | 宁夏隆基硅材料有限公司 | Single crystal furnace |
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| CN217203066U (en) * | 2021-12-29 | 2022-08-16 | 晶科能源股份有限公司 | Cooling circulation pipeline and single crystal furnace with cooling circulation group |
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|---|---|
| CN117702250B (en) | 2024-08-27 |
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