CN117697619A - Polishing pad and grinding equipment - Google Patents
Polishing pad and grinding equipment Download PDFInfo
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- CN117697619A CN117697619A CN202410038728.7A CN202410038728A CN117697619A CN 117697619 A CN117697619 A CN 117697619A CN 202410038728 A CN202410038728 A CN 202410038728A CN 117697619 A CN117697619 A CN 117697619A
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- radial grooves
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a polishing pad, which comprises a polishing layer, wherein the polishing layer comprises a plurality of concentric grooves, a plurality of first radial grooves and a plurality of second radial grooves, the second radial grooves are arranged between two adjacent first radial grooves, the first radial grooves radially extend from the center of the polishing layer to the edge of the polishing layer, the second radial grooves radially extend from any point on the polishing layer to any other point on the polishing layer, the lengths of the plurality of second radial grooves are equal or unequal, the radius of the polishing layer is recorded as R, the inner side ends of the second radial grooves are positioned at 0.15R-0.35R, and the outer side ends of the second radial grooves are positioned at 0.68R-0.92R. The invention combines the first radial grooves with the same length and the second radial grooves with different lengths, plays a role in adjusting the edge grinding rate, improves the grinding uniformity and solves the problem of edge effect.
Description
Technical Field
The present invention relates to the field of chemical polishing. More particularly, the present invention relates to a polishing pad and an abrasive apparatus.
Background
Chemical Mechanical Polishing (CMP) is currently the most common technique for polishing the surface of a workpiece. CMP is a composite technique obtained by combining chemical attack and mechanical removal, and is also the most commonly used technique for planarization of semiconductor wafers and the like.
Currently, in conventional CMP processes, a wafer is mounted on a carrier assembly of an abrasive apparatus, and the position at which the wafer contacts a polishing pad during polishing is set by adjusting relevant parameters. During polishing, the wafer is pressed against the polishing pad by a controlled pressure, and the polishing pad is rotated in the same or opposite direction as the wafer by an external drive force. In the relative rotation process, the polishing liquid is continuously dripped on the polishing pad, so that the surface of the wafer is subjected to planarization grinding through the mechanical action of the surface of the polishing pad and the chemical action of the polishing liquid, and the polishing of the wafer is realized.
However, chemical mechanical polishing is often accompanied by "edge effect" problems. Edge effects are phenomena of uneven polishing rate at the edge and center of the wafer, and generally cause excessive material removal from the edge of the wafer relative to the center of the wafer, thus causing uneven edge polishing profile of the wafer, severely affecting wafer yield and yield.
Disclosure of Invention
It is an object of the present invention to solve at least the above problems and to provide at least the advantages to be described later.
It is still another object of the present invention to provide a polishing pad having a polishing layer incorporating radial grooves of different lengths, improving polishing uniformity and solving the problem of edge effects.
To achieve these objects and other advantages and in accordance with the purpose of the invention, as embodied and broadly described herein, a first aspect of the invention provides a polishing pad comprising a polishing layer including concentric grooves, first radial grooves and second radial grooves, the second radial grooves being disposed between adjacent two of the first radial grooves, the first radial grooves extending radially from a center of the polishing layer to an edge of the polishing layer, the second radial grooves extending radially from any point on the polishing layer to any other point on the polishing layer, the second radial grooves being equal or unequal in length, the polishing layer having a radius denoted R, an inner end of the second radial grooves being located between 0.15R and 0.35R, and an outer end of the second radial grooves being located between 0.68R and 0.92R.
Specifically, the number of the second radial grooves is 2 x K, K is more than or equal to 2 and less than or equal to 16, and K is an integer; preferably, K is 4.ltoreq.K.ltoreq.8.
Preferably, the second radial groove comprises grooves with three lengths of 0.320R-0.355R, 0.545R-0.590R and 0.710R-0.730R.
Preferably, the length of the second radial groove is gradually increased along the circumferential direction, the length L of the second radial groove n The value of n is an integer between 1 and 2*K, K is more than or equal to 2 and less than or equal to 16, W is the width of the concentric grooves, P is the interval between the concentric grooves, A is a constant, W is 0.20-0.50 mm, and P is 1.47-4.11 mm.
Preferably, the ratio of the total volume of the second radial grooves to the total volume of the first radial grooves is in the range of 0.452 to 0.659, more preferably 0.550 to 0.605.
Preferably, the width of the concentric grooves is denoted as W, the interval is denoted as P, and the W/R range is
0.78*10 -3 ～1.33*10 -3 The value range of P/W is 3.48-5.65.
Preferably, the W/R range is 0.94 x 10 -3 ～1.12*10 -3 The range of P/W is 3.48-4.65.
Specifically, the depth of the concentric grooves is 0.3-0.45 times of the thickness of the polishing layer.
A second aspect of the present invention provides an abrasive apparatus having a polishing pad in contact with a workpiece to be abraded, the polishing pad being the polishing pad of the first aspect.
The invention at least comprises the following beneficial effects:
the invention combines the first radial grooves with the same length and the second radial grooves with the same or different lengths, plays a role in adjusting the edge grinding rate, improves the grinding uniformity and solves the problem of edge effect.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
Drawings
FIG. 1 is a schematic diagram of a trench structure according to one embodiment of the present invention;
fig. 2 is a schematic diagram of a trench structure according to another embodiment of the present invention.
Detailed Description
The present invention provides a polishing pad and an abrasive apparatus, and the present invention will be described with reference to specific embodiments. It should be noted that, the directions or positional relationships indicated by the terms "concentric circle", "radial", "edge", "inner side end", "outer side end", "circumferential direction", etc. are directions or positional relationships based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or element to be referred to must have a specific direction, be configured and operated in a specific direction, and thus should not be construed as limiting the present invention. Other combinations and various modifications within the spirit of the invention may be made without departing from the spirit or scope of the invention.
< polishing pad >
The invention provides a polishing pad, which comprises a polishing layer, wherein the polishing layer is a polishing surface opposite to a wafer during polishing. In the present invention, the thickness of the polishing layer is between 1.90mm and 2.10mm, for example, the thickness of the polishing layer may be 1.92mm, 1.991mm, 1.998mm, 2.023mm, 2.036mm, 2.051mm, 2.072mm. In the present invention, the polishing layer has a diameter of 50 to 100cm, preferably 50 to 90cm; for example, 77.47cm and 74.168cm are possible. In the invention, in order to make the grinding speed more uniform and reduce the edge effect, the invention sets radial grooves with different lengths, the length and radius of part of the radial grooves are the same, or if the center of the polishing layer is a blank area, the starting end of the part of the radial grooves can also start from the end side of the blank area, and the other part of the radial grooves are grooves with equal or unequal lengths but shorter than the radius of the polishing layer. Referring to fig. 1, in the present embodiment of the invention, the polishing layer includes a plurality of concentric grooves 1, a plurality of first radial grooves 2, and a plurality of second radial grooves 3, where the second radial grooves 3 are disposed between two adjacent first radial grooves 2, one or more second radial grooves 3 may exist between two adjacent first radial grooves 2, and when a plurality of second radial grooves 3 exist between two adjacent first radial grooves 2, as shown in fig. 2. The first radial grooves 2 of the present invention extend radially from the center of the polishing layer to the edge of the polishing layer, and a plurality of the first radial grooves 2 are uniformly distributed on the polishing layer. The second radial grooves 3 of the present invention radially extend from any point on the polishing layer to any other point on the polishing layer, the lengths L of the plurality of second radial grooves 3 are equal or unequal, in the same polishing layer, there are necessarily second radial grooves with unequal lengths, the second radial grooves 3 are uniformly distributed between the two first radial grooves 2, the radius of the polishing layer is denoted as R, the inner side end of the second radial groove 3 is located at 0.15R-0.35R, and the outer side end of the second radial groove 3 is located at 0.68R-0.92R. The inner side end of the second radial groove 3 may start at the concentric grooves 1 or may start at a space between two adjacent concentric grooves 1. The inner end of the second radial groove 3 may be located at the same radius value on the polishing layer or at a different radius value on the polishing layer.
In the present invention, the depth of the first radial groove 2 and the second radial groove 3 is 0.3 to 0.5 times the thickness of the polishing layer. In the embodiment of the invention, the first radial grooves 2, the second radial grooves 3 and the concentric grooves 1 are all communicated, so that the polishing liquid is uniformly distributed on the polishing layer.
In the present invention, the second radial grooves 3 provided on the polishing layer of the present invention are present in an even number, and the number of the second radial grooves 3 on the polishing layer is set according to the polishing rate and the polishing effect. Specifically, the number of the second radial grooves 3 is 2 x K, K is more than or equal to 2 and less than or equal to 16, and K is an integer; preferably, K is 4.ltoreq.K.ltoreq.8. In the present invention, the number of the first radial grooves 2 may be 4, 8, 16, 32, or even numbers in other ranges. Between two adjacent first radial grooves 2, 1, 2, 3 or 4 second radial grooves 3 are uniformly arranged.
In the present invention, in order to achieve an increase in the rate and also reduce the occurrence of wafer defects, the length of the second radial groove 3 is further defined. The second radial groove 3 at least comprises grooves with three lengths of 0.320R-0.355R, 0.545R-0.590R and 0.710R-0.730R. In this embodiment of the present invention, the inner ends of the adjacent second radial grooves 3 may be located at the same radius value of the polishing layer, or may be located at different radius values of the polishing layer; on one polishing layer, the outer end of the second radial groove 3 is located at the same radius value or at a different radius value of the polishing layer to meet the requirements of achieving different polishing rates at different positions.
In the present invention, the polishing uniformity is improved on the basis of being able to improve the polishing rate, so that the second radial grooves 3 can be more widely applied to various types of polishing layers. In the present embodiment of the present invention, the length of the second radial groove 3 gradually increases in the circumferential direction, L n Recorded as the length L of the nth radial groove n =0.514 r+a×n (w+p), n is an integer between 1 and 2*K, W is the width of the concentric grooves 1, P is the spacing between the concentric grooves 1, and a is a constant. The constant is a parameter designed according to the position of the region where the polishing rate is too high during polishing, and a is generally 1 to 15, preferably 1 to 12. For example, in one embodiment, a may take on the value 6.337. In the present embodiment, W is in the range of 0.20mm to 0.50mm, and P is in the range of 1.47mm to 4.11mm.
In the present invention, the ratio of the total volume of the first radial grooves 2 to the total volume of the second radial grooves 3 is in the range of 0.452 to 0.659, more preferably 0.550 to 0.605. The effect of polishing uniformity can be further improved when the ratio of the total volume of all the first radial grooves 2 to the total volume of the second radial grooves 3 is within this numerical range.
Specifically, the total volume of all the first radial grooves 2 is denoted as V Total 1 The width of the first radial groove 2 is denoted W 1 The length of the first radial groove 2 is R, and the surface area S of the first radial groove 2 1 ＝W 1 * R, the depth of the first radial groove 2 is denoted as D 1 Volume V of single first radial groove 2 1 ＝S 1 *D 1 ＝W 1 *R*D 1 Assuming 2*N first radial grooves 2, 2.ltoreq.N.ltoreq.16, V Total 1 ＝2*N*V 1 ＝2*N*W 1 *R*D 1 . When there is a blank region in the center of the polishing layer, and the starting end of the first radial grooves 2 is the end of the blank region, the total volume of all the first radial grooves 2 is denoted as V Total (S)
1 ＝2*N*V 1 ＝2*N*W 1 *(R-R 1 )*D 1 ，R 1 Is the radius value of the blank area of the polishing layer.
The total volume of all second radial grooves 3 is denoted V Total 2 The width of the second radial groove 3 is denoted W 2 The length of the second radial groove 3 is denoted as L n Surface area S of the second radial groove 3 2 ＝W 2 *L n N is an integer between 1 and 2*K, K is 2-16, and the depth of the second radial groove 3 is D 2 Volume V of single second radial groove 3 2 ＝S 2 *D 2 ＝W 2 *L n *D 2 Assuming that 2*K first radial grooves 2 are present, the total volume of all second radial grooves 3 is denoted as V Total (S)
2 ＝V 21 +V 22 +···+V 2n ＝W 2 *(L 1 +L 2 +···+L n )*D 2 。
The ratio of the total volume of the second radial grooves 3 to the total volume of the first radial grooves 2 is denoted as V Total 2 /V Total 1 ，V Total 2 /V Total 1 ＝W 2 *(L 1 +L 2 +···+L n )*D 2 /2*N*W 1 *R*D 1 . In the first radial direction 2 and the second radial directionGroove width W of groove 3 1 And W is 2 Equal groove depth D 1 And D 2 When equal, the volume ratio of the first radial grooves 2 to the second radial grooves 3 is related to the number of grooves and the groove length.
In the invention, in order to adjust the grinding rate, a grinding effect with better uniformity is achieved. The width of the concentric circular grooves 1 is marked as W, the interval is marked as P, and the W/R range is 0.78 x 10 -3 ～1.33*10 -3 The range of P/W is 3.48-5.65; preferably, W/R is in the range of 0.94 x 10 -3 ～1.12*10 -3 The range of P/W is 3.48-4.65. The value range of P is 1.70-2.82 mm, and the value range of W is 0.28-0.50 mm.
In the present invention, the depth of the concentric circular grooves 1 is 0.3 to 0.45 times the thickness of the polishing layer. For example, it may be 0.70mm, 0.71mm, 0.72mm, 0.74mm, 0.76mm, 0.77mm, 0.79mm, 0.81mm, 0.82mm, 0.83mm, 0.85mm, 0.86mm, or 0.88mm.
< preparation of polishing pad >
The polishing pad of the invention comprises a polishing layer and may also comprise a buffer layer. The polishing layer and the buffer layer can be self-made by the following methods, or can be directly purchased as a commercial product. The method of bonding the polishing layer and the buffer layer to each other to prepare the polishing pad is not particularly limited, and there may be mentioned a method of laminating an adhesive layer made of a polyester-based hot-melt adhesive on the buffer layer, melting the adhesive layer by heating with a heater, and then laminating and pressing the polishing layer on the melted adhesive layer.
As the polishing layer, the polishing layer of the invention can be prepared by adopting the known prepolymer method, one-step method and the like, and the method selected by the skilled in the art according to the need does not influence the conception and the protection scope of the invention as long as the polishing layer related to the invention can be prepared.
The polishing layer is made of materials conventionally used in the art, such as polyurethane, which refers to a product derived from difunctional or polyfunctional isocyanate, for example, one or more of polyether urea, polyisocyanurate, polyurethane, polyurea and polyurethane urea, and also a copolymer of two or more of polyether urea, polyisocyanurate, polyurethane, polyurea and polyurethane urea. Preferably, the polyurethane is prepared from an isocyanate-terminated prepolymer obtained by reacting an isocyanate and a polyol and then reacting with a curing agent, or from an isocyanate-terminated prepolymer obtained by reacting an isocyanate and a polyol and then reacting with a mixture of a curing agent and hollow microspheres.
The isocyanate may be, for example, an aromatic isocyanate and/or an aliphatic isocyanate, which are known in the polyurethane field. The isocyanate may be, for example, one or more of an aromatic diisocyanate compound, an aliphatic diisocyanate compound, and an alicyclic diisocyanate compound. The aromatic diisocyanate is preferably one or more of 2, 4-toluene diisocyanate, 2, 6-toluene diisocyanate, 2' -diphenylmethane diisocyanate, 2,4' -diphenylmethane diisocyanate, 4' -diphenylmethane diisocyanate, 1, 5-naphthalene diisocyanate, p-phenylene diisocyanate, m-phenylene diisocyanate, p-phenylene diisocyanate and m-phenylene diisocyanate. The aliphatic diisocyanate is preferably one or more of ethylene diisocyanate, 2, 4-trimethylhexamethylene diisocyanate and 1, 6-hexamethylene diisocyanate. The alicyclic diisocyanate is preferably one or more of 1, 4-cyclohexane diisocyanate, 4' -dicyclohexylmethane diisocyanate, isophorone diisocyanate and norbornane diisocyanate.
The polyol is not particularly limited, and may be any compound known in the polyurethane field, for example, polyether polyol and/or polyester polyol. Preferably, the polyol is one or more of polytetramethylene ether glycol, polyethylene glycol, polypropylene glycol, polybutylene glycol, ethylene adipate and butylene adipate, or a copolymer of two or more of the above six substances.
The saidThe prepolymer is preferably of the typeAnd->One or more of the following.
The curing agent may be, for example, one or more of a polyol, a polyamine and an alcohol amine, which are known in the polyurethane art, and the polyamine may be used, for example, without particular limitation. Preferably, the curing agent is one or more of 4,4 '-methylene-bis-o-chloroaniline, 4' -methylenebis (3-chloro-2, 6-diethylaniline), dimethylthiotoluenediamine, 1, 3-propanediol di-p-aminobenzoate, diethyltoluenediamine, 5-t-amyl-2, 4-and 3-t-amyl-2, 6-toluenediamine and chlorotoluenediamine. More preferably, the curing agent is preferably MOCA which is 3, 3-dichloro-4, 4-diaminodiphenylmethane and/or MCDEA which is 4, 4-methylenebis (3-chloro-2, 6-diethylaniline).
A polishing layer comprising hollow microspheres, the hollow microspheres being uniformly dispersed in the polishing layer. The hollow microspheres have a capsule-like structure of outer walls of polyacrylonitrile or a polyacrylonitrile copolymer. More preferably, the hollow microsphere is of the Expancel series hollow microsphere or the Sorbon microsphere F series. Even more preferably, the hollow microspheres are of the type551DE20d42. The hollow microsphere polymer is dispersed in the polishing layer, so that the polishing layer finally has the porosity of 10-40%, and the pore diameter is less than 120 mu m; more preferably, the porosity is 15-35%, and the pore diameter is<50μm。
The content of the curing agent and the content of the microspheres control the physical parameters such as different hardness, density, compressibility and the like of the polishing layer through the prepolymer of different components. And pouring the composition into a mold to form a cylinder, slicing the cylinder to obtain a sheet, and grooving the sheet to obtain the polishing layer with the groove pattern, thereby preparing the polishing layer.
Examples of the buffer layer include a fibrous nonwoven fabric such as a polyester nonwoven fabric, a nylon nonwoven fabric, and an acrylic nonwoven fabric; resin-impregnated nonwoven fabrics such as polyurethane-impregnated polyester nonwoven fabrics; polymer resin foams such as polyurethane foam and polyethylene foam; rubber resins such as butadiene rubber and isoprene rubber; photosensitive resins, and the like.
The density, hardness and compressibility of the buffer layer can be adjusted by using different nonwoven fabrics and polyurethane DMF solutions of different viscosities. After soaking for a period of time, forming and attaching TPU on non-woven fabrics through a solidification tank of DMF with low concentration and solution exchange, then placing into a water washing tank of clean water, washing off solvent, then drying in a tunnel furnace at 150 ℃, forming, and polishing to the required thickness.
< grinding apparatus >
A second aspect of the present invention provides an abrasive apparatus having a polishing pad in contact with a workpiece to be abraded, the polishing pad being provided in the first aspect of the present invention.
The present invention is described in further detail below with reference to examples to enable those skilled in the art to practice the same by referring to the description.
The experimental methods described in the following embodiments are conventional methods unless otherwise indicated, and the reagents and materials are commercially available.
The polishing layer in the polishing pad used in the following examples had a diameter of 74.168cm, a radius of 37.084cm and a thickness of 2.072mm.
In embodiments 1 to 5, one second radial groove is provided between two adjacent first radial grooves.
In the polishing layers of the polishing pads used in examples 1 to 4 and comparative examples 1 to 5, the width W of the concentric grooves was 0.30mm, the pitch P between the concentric grooves was 1.57mm, the depth of the concentric grooves was 0.7112mm, and the width W of the first radial groove 1 And width W of the second radial groove 2 Equal, W 1 ＝W 2 ＝0.7239mmDepth D of first radial groove 1 And depth D of the second radial groove 2 Equal, D 1 ＝D 2 ＝0.7112mm。
The width W of the concentric grooves of example 5 was 0.3937mm, the interval P was 1.7272mm, and the depth of the concentric grooves, the width and depth of the first radial groove and the second radial groove were the same as those of examples 1 to 4.
The parameter designs in examples 1 to 5 and comparative examples 1 to 5 are shown in Table 1. OT in table 1 refers to the first radial groove, TT refers to the second radial groove, TT ordering refers to the clockwise ordering of the second radial groove in the circumferential direction, the number of records in the column of TT ordering refers to the second radial groove in the specific ordering order, e.g. record "1" refers to the second radial groove ordered 1, record "2/3" refers to the second radial groove ordered clockwise 2 and 3. Ratio 1 refers to the ratio of the value at the inner end position of the second radial groove to the value of the radius of the polishing layer, ratio 2 refers to the ratio of the value at the outer end position of the second radial groove to the value of the radius of the polishing layer, ratio 3 refers to the ratio of the length of the second radial groove to the value of the radius of the polishing layer, and ratio 4 is V Total 2 /V Total 1 ，V Total 2 V is the sum of the volumes of all the second radial grooves on the polishing layer Total 1 Is the sum of the volumes of all the first radial grooves on the polishing layer.
The effects of examples 1 to 5 and comparative examples 1 to 5 are shown in Table 2.
TABLE 1
In embodiment 4, the lengths of the 8 second radial grooves gradually increase along the circumferential direction, and A takes on a value 4.0153 corresponding to formula L n The inner ends of the 8 second radial grooves are increased by 2 (w+p) values in the circumferential direction, wherein n is an integer of 1 to 8, =0.514 r+4.0153 n (w+p).
TABLE 2
Method for evaluating polishing pad:
the polished wafer was Oxide 7.5K 6.0K wafer, the slurry was Ceria abrasive slurry CES333F, the flow rate was 200CC, the conditioner was a Saesol DS8051 diamond disk, the pressure was 4lbf, the polishing head pressures were 1.0psi and 2.0psi, the platen speed was 93rpm, and the carrier speed was 87rpm.
Average grinding rate: under the above conditions, a nonmetallic oxide film having a thickness of 1 μm was deposited on a test wafer and polished, and the average polishing rate was determined from the abrasion loss in units of
The defect degree testing method comprises the following steps: defect level is a count of defects on a measurement wafer using an instrument such as a KLA-Tencor SP2 analyzer that counts the average number of defects in 10 wafers.
Polishing rate non-uniformity: the thickness of the polishing object was measured before and after the polishing experiment, respectively. 49 positions were selected in advance on the surface of the object to be polished for measurement, and the polishing rate unevenness of the polished wafer at the time of polishing for 1 hour and after polishing for 10 hours was recorded. The polishing rate unevenness can be calculated from the maximum value (Max) and the minimum value (Min) of the difference between the thicknesses of 49 positions measured before and after the test and the average value of these values, and the calculation formula is: grinding rate non-uniformity = 100 x (Max-Min)/average.
Although embodiments of the present invention have been disclosed above, it is not limited to the details and embodiments shown, it is well suited to various fields of use for which the invention is suited, and further modifications may be readily made by one skilled in the art, and the invention is therefore not to be limited to the particular details and examples shown and described herein, without departing from the general concepts defined by the claims and the equivalents thereof.
Claims (9)
1. The utility model provides a polishing pad, its characterized in that includes the polishing layer, the polishing layer includes a plurality of concentric circles slot, a plurality of first radial slot and a plurality of second radial slot, the second radial slot sets up in adjacent two between the first radial slot, first radial slot is followed polishing layer center radial extension extremely polishing layer edge, the second radial slot is followed arbitrary point on the polishing layer radial extension to arbitrary other point on the polishing layer, the radius mark of polishing layer is R, the inboard end of second radial slot is located 0.15R ~ 0.35R department, the outside end of second radial slot is located 0.68R ~ 0.92R department.
2. The polishing pad of claim 1, wherein the number of second radial grooves is 2 x K, 2K 16, K being an integer; preferably, K is 4.ltoreq.K.ltoreq.8.
3. The polishing pad of claim 1, wherein the second radial grooves comprise grooves of at least three lengths of 0.320R-0.355R, 0.545R-0.590R, and 0.710R-0.730R.
4. The polishing pad of claim 1 wherein the length of the second radial groove is progressively increased circumferentially, L n Recorded as the length L of the nth radial groove n The value of n is an integer between 1 and 2*K, K is more than or equal to 2 and less than or equal to 16, W is the width of the concentric grooves, P is the interval between the concentric grooves, A is a constant, W is 0.20-0.50 mm, and P is 1.47-4.11 mm.
5. The polishing pad of claim 1, wherein the ratio of the total volume of the second radial grooves to the total volume of the first radial grooves is in the range of 0.452 to 0.659, more preferably 0.550 to 0.605.
6. The polishing pad of claim 1, whereinWherein the width of the concentric grooves is denoted as W, the interval is denoted as P, and the W/R range is 0.78×10 -3 ～1.33*10 -3 The value range of P/W is 3.48-5.65.
7. The polishing pad of claim 6, wherein W/R ranges from 0.94 x 10 -3 ～1.12*10 -3 The range of P/W is 3.48-4.65.
8. The polishing pad of claim 1, wherein the concentric grooves have a depth of 0.3 to 0.45 times the thickness of the polishing layer.
9. An abrasive apparatus having a polishing pad in contact with a workpiece to be abraded, the polishing pad being as claimed in any one of claims 1 to 8.
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| CN118342409A (en) * | 2024-05-08 | 2024-07-16 | 湖北碳星科技股份有限公司 | Polishing pad grinding equipment and polishing process |
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| CN118342409A (en) * | 2024-05-08 | 2024-07-16 | 湖北碳星科技股份有限公司 | Polishing pad grinding equipment and polishing process |
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