CN117687070A - Scintillation detector and preparation method thereof - Google Patents

Abstract

The application provides a scintillation detector and a preparation method thereof. The scintillation detector comprises a shell and a detection assembly arranged in the shell, wherein the detection assembly comprises a scintillator, a light guide and a photoelectric assembly which are sequentially arranged along the axial direction of the shell; the light emergent surface of the scintillator is contacted with the light guide through a first optical coupling medium; the light guide is contacted with the light sensitive surface of the photoelectric component through a second optical coupling medium; one or more damping components are inserted between the upper end face of the detection component and the shell and/or between the lower end face of the detection component and the shell; in the absence of an applied pressure, the difference between the dimensions of the interior of the housing and the sum of the dimensions of all the components of the probe assembly, in a first direction parallel to the axial direction of the housing, is less than the dimensions of the one or more shock absorbing assemblies being inserted; the damping member is resilient and the first optical coupling medium, the light guide and/or the second optical coupling medium are resilient. The scintillation detector has high detection efficiency and can be used under high vibration impact level.

Description

Scintillation detector and preparation method thereof

Technical Field

The present application relates to the field of radiation detection, and in particular, to a scintillation detector and a method of making the same.

Background

The scintillation detector is generally composed of a scintillator, a photoelectric sensor, a power supply circuit, and a signal processing circuit (amplifying, comparing, shaping, etc.), converts rays (α, β, γ, X, neutrons, etc.) into an electrical signal, and is further processed by a subsequent circuit or instrument to realize detection of radiation. The scintillator types are various, and can be classified into solid scintillators, liquid scintillators, gas scintillators and solid solution scintillators in physical forms, and inorganic scintillators and organic scintillators in chemical structures.

Currently, scintillation detectors in the form of solid scintillators and photomultiplier (PMT, photoMultiplier Tube) combinations have been developed to a relatively high degree, and usually, PMT light-sensitive surface sizes and scintillator light-emitting surface sizes are selected to be similar, and the two are directly coupled or indirectly coupled by using light conduction.

In the field of coal field logging, there is a high demand for miniaturization of the detector due to the smaller borehole diameter. Meanwhile, on the premise of smaller volume, the requirements of higher detection efficiency, low power consumption, vibration impact resistance and the like are expected to be met. PMTs have been developed for scintillation detectors based on Multi-pixel photon counters (MPPC, multi-Pixel Photon Counter) that are difficult to meet the practical demands of high detection efficiency, low power consumption, and miniaturization due to their large volume (diameter) and high power consumption.

The MPPC (silicon photomultiplier) (SiPM, silicon photomultiplier) is a novel photoelectric conversion device, and has the advantages of low working voltage, small volume, high sensitivity, magnetic field interference resistance, strong mechanical impact resistance, low mass production cost and the like, and is not only beneficial to reducing the volume of a detector, improving the stability and safety of the detector, but also beneficial to reducing the cost. In recent years, the scintillation detectors using MPPC as photoelectric devices in China are more and more, are rich in variety, and are applied to the fields of nuclear medicine imaging, radiation detection, coal field logging, radiation imaging and the like.

To achieve high detection efficiency, the scintillation detector generally uses a scintillator with a larger volume, and the effective diameter (or the diameter of the light-emitting window) of the scintillator is tens or even tens of millimeters, but the size of the MPPC photosurface is smaller (the current maximum size of a single sheet is 6mm x 6 mm), and the difference from the size of the end face of the scintillator is larger. It is often desirable to use a tapered light guide or make exit holes in the scintillator end face that match the MPPC size to achieve better light collection.

In conventional scintillation detector products, the scintillator is adhesively coupled to the MPPC, or the scintillator is adhesively coupled to the light guide, and the MPPC, typically using an optical adhesive, in such a way that after the optical adhesive has cured, the two coupled parts are secured together. In coal field logging application, the requirement on the vibration resistance of the detector is high, the conventional optical cement adhesive coupling is difficult to resist strong vibration impact, under the strong vibration impact, the coupling surface solidified by the optical cement is easy to decouple, and once the optical cement is decoupled, the coupling surface is easy to break and cannot recover, so that the light guide efficiency is obviously reduced, the detection efficiency is reduced, and the product performance is degraded. Particularly for a detector with high detection efficiency, the volume and weight of the scintillator used are large, and the decoupling phenomenon is more easy to occur or the device is damaged due to strong impact.

The matters in the background section are only those known to the inventors and do not, of course, represent prior art in the field.

Disclosure of Invention

The present application is directed to optimizing the structure and process design of a scintillation detector such that the scintillation detector has excellent anti-vibration performance. Meanwhile, the method and the device can solve the problem of coupling between the large-volume scintillator and the photoelectric component when the large-volume scintillator is used for realizing high detection efficiency, improve the mechanical property of the coupling surface on the premise of ensuring light transmission, and protect the scintillator, the photoelectric component, the coupling medium, the light guide and the like from being damaged.

A first aspect of the present application provides a scintillation detector comprising a housing and a detection assembly disposed within the housing, the detection assembly comprising a scintillator, a light guide, and a photovoltaic assembly disposed in sequence along an axial direction of the housing;

the light emergent surface of the scintillator is contacted with the light guide through a first optical coupling medium;

the light guide is contacted with the light sensing surface of the photoelectric component through a second optical coupling medium;

one or more damping components are inserted between the upper end face of the detection component and the shell, and/or between the lower end face of the detection component and the shell; in the absence of an applied pressure, in a first direction axially parallel to the housing, the difference between the dimensions of the interior of the housing and the sum of the dimensions of all the components of the probe assembly is less than the dimensions of the one or more shock absorbing assemblies being plugged;

The one or more shock absorbing members are resilient and the first optical coupling medium, the light guide and/or the second optical coupling medium are resilient.

In some embodiments of the present application, a predetermined pressure is generated between the scintillator and the light guide, and between the light guide and the optoelectronic assembly due to compression with the one or more shock absorbing assemblies interposed; the predetermined pressure is 10N-300N.

In some embodiments of the present application, the shock absorbing assembly includes a shock pad and/or a spring.

In some embodiments of the present application, the scintillation detector further comprises:

and a protective pad assembly disposed around the optoelectronic assembly.

In some embodiments of the present application, the protection pad assembly includes one protection pad or a plurality of protection pads placed in an overlapping manner, and the protection pad is in a one-piece structure or is formed by combining a plurality of parts;

the protection pad assembly comprises a through hole, and the photoelectric assembly comprises one or more photoelectric devices, wherein the one or more photoelectric devices are positioned in the through hole; or the protection pad assembly comprises a plurality of through holes, and the photoelectric assembly comprises a plurality of photoelectric devices which are respectively positioned in the plurality of through holes.

In some embodiments of the present application, the difference between a first dimension of the protective pad assembly extending along the first direction and a second dimension of the optoelectronic assembly extending along the first direction is between-0.3 mm and 0.3 mm.

In some embodiments of the present application, the shore hardness of the protective pad assembly is greater than or equal to 20HA.

In some embodiments of the present application, the protective pad assembly is made of one or more of the following materials: silica gel, foam, rubber, sponge, and resin.

In some embodiments of the present application, the light transmittance of the light guide is greater than or equal to 80%; the light guide is made of one or more of the following materials: silicone gel, optical silicone grease, optical silicone oil, transparent resin, transparent rubber, transparent ceramic, transparent glass and transparent crystal.

In some embodiments of the present application, the first optical coupling medium and the second optical coupling medium are made of silicone grease and/or silicone oil.

In some embodiments of the present application, the scintillator includes a reflective layer, and the light exit window of the light exit surface of the scintillator is not covered by the reflective layer; the reflecting layer is selected from one or more of an air layer specular reflecting layer, an air layer-free specular reflecting layer, an air layer diffuse reflecting layer and an air layer-free diffuse reflecting layer; and/or

The optoelectronic component is selected from one or more of a silicon photomultiplier, a photodiode, an avalanche photodiode, a complementary metal oxide semiconductor, and a charge coupled device.

In some embodiments of the present application, the detection assembly further comprises a circuit board disposed below the optoelectronic assembly.

A second aspect of the present application provides a method for manufacturing a scintillation detector, comprising:

one or more damping components are inserted between the upper end surface of the detection component and the shell and/or between the lower end surface of the detection component and the shell;

the detection assembly is arranged in the shell and comprises a scintillator, a light guide and a photoelectric assembly which are sequentially arranged along the axial direction of the shell; the light emergent surface of the scintillator is contacted with the light guide through a first optical coupling medium; the light guide is contacted with the light sensing surface of the photoelectric component through a second optical coupling medium;

wherein, in a first direction parallel to the housing axis, the difference in size of the housing interior and the sum of the sizes of all components of the probe assembly is less than the size of the one or more shock absorbing assemblies being inserted without the application of pressure;

The one or more shock absorbing members are resilient and the first optical coupling medium, the light guide and/or the second optical coupling medium are resilient.

The application adopts the non-fixed coupling mode, uses light guide and optical coupling medium to connect photoelectric assembly and scintillator, owing to pack into one or more damper between detecting assembly and casing, can exert certain pressure to the coupling face for photoelectric assembly, light guide, scintillator's surface can be abundant, even paste tightly together, guarantees higher leaded light efficiency, thereby has the detection effect of preferred. In addition, as the coupling surfaces of the photoelectric component, the light guide and the scintillator are non-fixedly coupled and a certain pressure is applied, even if a certain mutual motion exists between the two coupled components under the condition of higher vibration impact, the coupling state can be kept stable, and the light guide effect can not be influenced.

Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.

Drawings

Embodiments of the present application are described in detail below with reference to the accompanying drawings. The accompanying drawings, which are incorporated in and constitute a part of this application, are included to provide a further understanding of the application. The illustrative embodiments of the present application and their description are for the purpose of explaining the present application and are not to be construed as unduly limiting the present application.

FIG. 1 is a schematic cross-sectional view of a scintillation detector provided in an embodiment of the present application.

Fig. 2 is an assembled schematic view of a circuit board and an optoelectronic assembly in a scintillation detector according to an embodiment of the present application.

Fig. 3 is a schematic structural diagram of a protection pad assembly in a scintillation detector according to an embodiment of the present application.

Fig. 4 is an assembly schematic diagram of a circuit board, an optoelectronic assembly, and a protection pad assembly in a scintillation detector according to an embodiment of the present application.

Fig. 5 is an assembled schematic view of a circuit board and an optoelectronic assembly in a scintillation detector according to another embodiment of the present application.

Fig. 6 is an assembly schematic diagram of a circuit board, an optoelectronic assembly, and a protection pad assembly in a scintillation detector according to another embodiment of the present application.

Fig. 7 is a schematic diagram showing connection between a circuit board and an optoelectronic component in a scintillation detector according to another embodiment of the present application.

Fig. 8 is a schematic structural view of a protection pad assembly in a scintillation detector according to another embodiment of the present application.

Fig. 9 is an assembly schematic diagram of a circuit board, an optoelectronic assembly, and a protection pad assembly in a scintillation detector according to another embodiment of the present application.

Fig. 10 is a process flow diagram of a manufacturing process of a scintillation detector according to an embodiment of the present application.

Detailed Description

Hereinafter, only certain exemplary embodiments are briefly described. As will be recognized by those of skill in the pertinent art, the described embodiments may be modified in various different ways without departing from the spirit or scope of the present application. Accordingly, the drawings and description are to be regarded as illustrative in nature and not as restrictive.

In the description of the present application, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," etc. indicate or are based on the orientation or positional relationship shown in the drawings, merely for convenience of description and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.

In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.

In this application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, and may also include the first and second features not being in direct contact but being in contact with each other by way of additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is less level than the second feature.

The following disclosure provides many different embodiments or examples for implementing different structures of the present application. In order to simplify the disclosure of the present application, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present application. Furthermore, the present application may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not in themselves indicate the relationship between the various embodiments and/or arrangements discussed.

In this application, the x-axis, the y-axis, and the z-axis are perpendicular to each other, and the z-axis is perpendicular to a plane defined by the x-axis and the y-axis.

The preferred embodiments of the present application will be described below with reference to the accompanying drawings, it being understood that the preferred embodiments described herein are for illustration and explanation of the present application only and are not intended to limit the present application.

Fig. 1 illustrates a scintillation detector 100 provided in an embodiment of the present application, including a housing 110 and a detection assembly 120 disposed inside the housing. In the embodiment shown in fig. 1, the detection assembly 120 includes a scintillator 121, a light guide 122, a photoelectric assembly 123, and a circuit board 124 disposed in this order from top to bottom along the axial direction of the housing 110 (i.e., in the embodiment shown in fig. 1, the z-axis direction). Fig. 2 shows the assembled structure of the circuit board 124 and the optoelectronic package 123 in the scintillation detector 100 shown in fig. 1.

The scintillator 121 includes a light exit surface (not shown in the figures), which in the embodiment shown in fig. 1 is located at the end of the scintillator 121 near the light guide 122 (i.e., the lower end surface of the scintillator 121, parallel to the plane defined by the x-axis and the y-axis). The light-emitting surface of the scintillator 121 is in contact with the light guide 122 via a first optical coupling medium (not shown). The opto-electronic component 123 includes a photosurface (not shown), which in the embodiment shown in fig. 1 is located at the end of the opto-electronic component 123 adjacent to the light guide 122 (i.e., the upper end surface of the opto-electronic component 123, parallel to the plane formed by the x-axis and the y-axis). The photosensitive surface of the optoelectronic package 123 is in contact with the light guide 122 via a second optical coupling medium (not shown).

Both the scintillator 121 and the photovoltaic module 123 are hard materials, such as direct contact, and are easily damaged under strong vibration impact conditions, resulting in reduced light transmittance and even device damage. Meanwhile, the surfaces of the two are not in uniform contact, so that the light guide efficiency is low, and the detection efficiency of the detector is reduced. In this application, the light guide 122 is not only used as a light guiding element, but also used as a buffer material for the scintillator 121 and the photoelectric assembly 123 to conduct the scintillation light generated by the scintillator 121 to the light sensing surface of the photoelectric assembly 123, so that the direct hard contact between the scintillator 121 and the photoelectric assembly 123 is avoided, the surfaces of the scintillator 121 and the photoelectric assembly 123 are protected, and the vibration resistance of the scintillation detector 100 is improved. Meanwhile, the light guide 122 is matched with the first optical coupling medium and the second optical coupling medium for use, so that the coupling surfaces can be fully and uniformly contacted, and a good light guide effect is realized. The coupling surface as used herein refers to a surface where elements are connected to each other, for example, a light emitting surface of the scintillator 121, upper and lower end surfaces of the light guide 122, and a light sensing surface of the photoelectric element 123 in this embodiment.

In this application, the scintillator 121 and the light guide 122, and the light guide 122 and the photoelectric component 123 are all coupled in a non-fixed manner, that is, the coupled two components are connected in a non-fixed manner by an optical coupling medium, so that under the condition of high vibration impact, even if there is a certain mutual movement between the coupled two components, the coupled state can be kept stable. Thereby avoiding the problem that the optical cement cannot be restored once being decoupled by adopting fixed coupling modes such as optical cement curing and the like. The inventors have found that if a certain pressure is applied to the coupling surface, the components connected in the non-stationary coupling manner can be kept in a stable coupled state after being subjected to a high vibration condition. For this purpose, the scheme adopted in the present application is as follows.

In the embodiment shown in fig. 1, a damper member 131 is interposed between the upper end surface of the probe member 120 and the housing 110. Wherein the difference between the size of the interior of the housing 110 minus the sum of the sizes of all the components of the detection assembly 120 (i.e., the scintillator 121, the light guide 122, the opto-electronic assembly 123, and the circuit board 124 in the embodiment shown in fig. 1) in the first direction parallel to the housing axial direction (i.e., the z-axis direction) is smaller than the size of the inserted shock pad 131 without applying pressure. That is, after the shock pad 131 is inserted, the scintillator 121, the light guide 122, and the photoelectric component 123 are extruded, and a certain pressure (also referred to as a predetermined pressure in the present application) is applied between the scintillator 121, the light guide 122, and the photoelectric component 123 due to the extrusion, so that the coupling surfaces of the scintillator 121, the light guide 122, and the photoelectric component 123 can be sufficiently and uniformly adhered together, thereby maintaining a high light guiding efficiency. In addition, under the condition of extrusion, the two coupled parts are not easy to misplace, even if the two coupled parts have certain relative motion under the condition of higher vibration impact, the coupled state can be kept stable, and the light guide effect is not influenced. Meanwhile, the shock pad 131 can also play a role of buffering protection, so that the detector can be used under high vibration impact level.

Alternatively, the predetermined pressure is 10 to 300 newtons (N). The pressure is less than 10N, so that the coupling surfaces cannot be tightly attached together; the scintillator 121, the light guide 122, and the optoelectronic package 123 may be damaged by the pressure greater than 300N. In a preferred embodiment of the present application, the predetermined pressure may be 80 to 200N.

In other embodiments of the present application, the shock absorbing assembly 131 may be disposed between the lower end surface of the probe assembly 120 and the housing 110. Further, in other embodiments of the present application, the shock absorbing assembly 131 may be provided in plurality, and the plurality of shock absorbing assemblies 131 may be provided between the upper end surface of the probe assembly 120 and the housing 110, and/or between the lower end surface of the probe assembly 120 and the housing 110.

In this application, the damper assembly 131 has elasticity. Further, at least one of the first optical coupling medium, the light guide 122, and the second optical coupling medium is also elastic. In this way, when the damper 131 is plugged into the housing 110, the first optical coupling medium, the light guide 122 and/or the second optical coupling medium have the ability of being deformed by extrusion, and the damper 131 is matched with the deformation of the damper 131, so that the damper 131 is more beneficial to being plugged, the coupling surfaces can be sufficiently and uniformly adhered together, and the higher-strength vibration impact can be coped with.

In this embodiment, the shock absorbing component 131 is a shock pad. In other embodiments of the present application, the shock absorbing assembly 131 may be any other elastic material, such as a spring, so long as the above-mentioned effects can be achieved.

Optionally, the Shore hardness of the shock pad is more than or equal to 20HA. Alternatively, the shock pad may be made of silica gel or rubber. The silicone rubber and the rubber have a certain elasticity and a certain hardness, and can press other components after being inserted into the housing 110, so that the predetermined pressure is generated between the scintillator 121 and the light guide 122 and between the light guide 122 and the optoelectronic component 123.

Optionally, the first optical coupling medium and the second optical coupling medium are made of silicone grease and/or silicone oil.

Optionally, the light transmittance of the light guide 122 is greater than or equal to 80%, which is beneficial to improving the light conduction efficiency.

Optionally, the light guide 122 is made of one or more of the following materials: silicone gel, optical silicone grease, optical silicone oil, transparent resin, transparent rubber, transparent ceramic, transparent glass and transparent crystal. The materials have high light transmittance and can ensure good light transmission effect. Among them, silicone gel, optical silicone grease, optical silicone oil, transparent resin, transparent rubber, and the like are preferably used in the present application, and these materials not only have high light transmittance but also have elasticity, and can effectively protect the scintillator 121 and the photoelectric assembly 123.

In the preferred embodiment of the present application, the light guide 122 is uniform in thickness, smooth in surface, scratch-free, and abrasion-free. In the embodiment shown in fig. 1, the thickness of the light guide 122 is 1mm. In other embodiments of the present application, the thickness of the light guide 122 may be selected according to actual requirements (e.g., size of the scintillator 121, vibration resistance level, etc.).

In the embodiment shown in fig. 1, the portion of the scintillation light generated by the scintillator 121 and transmitted to the light emitting surface can be conducted to the light receiving surface of the optoelectronic component 123 by the light guide 122, so that the optoelectronic component 123 generates an electrical signal and transmits the electrical signal to the circuit board 124.

In the embodiment shown in fig. 1, the scintillator 121 further includes a reflective layer, where the light exit window of the light exit surface is not covered by the reflective layer. Optionally, the reflective layer is selected from one or more of an air layer specular reflective layer, an air layer free specular reflective layer, an air layer diffuse reflective layer, and an air layer free diffuse reflective layer. The portion of the scintillation light generated by the scintillator 121 transmitted to the reflective layer can be reflected to the light-emitting surface, so that the light collection efficiency can be effectively improved, thereby improving the detection effect of the scintillation detector 100.

In the embodiment shown in fig. 1 and 2, the entire upper end surface of the optoelectronic component 123 is a photosurface, the lower end surface of the scintillator 121 is a light emitting surface, and the area of the light emitting window of the light emitting surface of the scintillator 121 is equal to the area of the photosurface of the optoelectronic component 123, and the positions thereof correspond to each other. For example, the light sensing surface of the photoelectric component 123 is disposed opposite to the central portion of the lower end surface of the scintillator 121, at this time, a light emitting window having an area equal to and corresponding to the area of the light sensing surface of the photoelectric component 123 may be formed in the central portion of the lower end surface of the scintillator 121, and the rest of the lower end surface is covered by the reflective layer, so that the scintillation light generated by the scintillator 121 can be transmitted to the light sensing surface of the photoelectric component 123 through the light emitting window in a concentrated manner.

In other embodiments of the present application, the light sensing surface of the optoelectronic component 123 may be only a part of the upper end surface of the optoelectronic component 123. In other embodiments of the present application, the area of the light exit window of the scintillator 121 may be larger than the area of the light sensing surface of the optoelectronic component 123, for example, the entire lower end surface of the scintillator 121 is the light exit window.

The circuit board 124 may include a signal processing circuit and a power supply circuit for processing the electrical signal output from the optoelectronic device 123 and supplying power to the optoelectronic device 123. The signal processing circuit can amplify the electric signal output by the photoelectric component 123 and then output an analog signal or output a standard TTL signal after discrimination and shaping, thereby realizing the function of converting the ray information into the electric signal, and converting the electric signal into energy spectrum information or counting rate and dosage rate through a subsequent processing circuit. The power supply circuit provides power to the opto-electronic assembly 123. Optionally, the circuit board 124 also has a temperature compensation function, so that output stability of the scintillation detector 100 under different temperature conditions can be ensured. In other embodiments of the present application, the circuit board 124 may be omitted from the scintillation detector 100, the functionality of the circuit board 124 may be implemented using external devices, or other components may be used in the scintillation detector 100 instead of the circuit board 124.

In the embodiment shown in fig. 2, the surface of the optoelectronic component 123 opposite to the photosurface (i.e., the lower end surface of the optoelectronic component 123 shown in fig. 1) is soldered to the circuit board 124. In other embodiments of the present application, the optoelectronic package 123 may be connected to the circuit board 124 in other ways.

In the embodiment shown in FIG. 1, scintillation detector 100 also includes a protective pad assembly 140, protective pad assembly 140 being disposed about photovoltaic assembly 123. As described above, the edge of the optoelectronic component 123 is hard, so that the stress at the edge of the optoelectronic component 123 is easily concentrated under the condition of strong vibration impact, so that the pressure is large, and the stress of the light guide 122 is easily uneven, and the light guide is easily damaged. The protection pad assembly 140 disposed around the optoelectronic assembly 123 can avoid the occurrence of the above situation, and in the case of strong vibration impact, the protection pad assembly 140 can play a certain role of supporting, and uniformly apply pressure to the light guide 122 together with the optoelectronic assembly 123, so as to reduce the pressure of the edge, especially the vertex angle position, of the optoelectronic assembly 123, thereby protecting the light guide 122.

Optionally, the shore hardness of the protection pad assembly 140 is greater than or equal to 20HA, which can better support the light guide 122. Optionally, the protective pad assembly 140 is made of one or more of the following materials: silica gel, foam, rubber, sponge, and resin. The protective pad assembly 140 of these materials is effective in protecting the light guide 122.

Fig. 3 shows the structure of the protection pad assembly 140 in the scintillation detector 100 shown in fig. 1, and fig. 4 shows the structure of the scintillation detector 100 shown in fig. 1 after the circuit board 124, the photoelectric assembly 123, and the protection pad assembly 140 are assembled together. In the embodiment shown in fig. 3 and 4, the protection pad assembly 140 includes a protection pad 141, the optoelectronic assembly 123 includes an optoelectronic device 123a, and the protection pad 141 has a through hole a, and the optoelectronic device 123a is disposed in the through hole a.

In other embodiments of the present application, as shown in fig. 5 and 7, the optoelectronic assembly 123-1 and the optoelectronic assembly 123-2 may include a plurality of optoelectronic devices 123a. In the embodiment shown in fig. 5, four photovoltaic devices 123a are closely aligned together (also referred to herein as a close-coupled arrangement) to form a cube, i.e., each photovoltaic device 123a is in contact with two other photovoltaic devices 123a. In the embodiment shown in fig. 7, four opto-electronic devices 123a are arranged together in discrete fashion (also referred to herein as a discrete arrangement), i.e., each opto-electronic device 123a is spaced apart a distance. In the embodiment shown in fig. 5 and 7, each of the optoelectronic devices 123a has the same size and is in a cubic structure, and in other embodiments of the present application, when there are a plurality of optoelectronic devices 123a, each of the optoelectronic devices 123a may have different sizes, or some of the optoelectronic devices 123a may have the same size, and another of the optoelectronic devices may have different sizes. In other embodiments of the present application, when there are multiple optoelectronic devices 123a, one portion of the optoelectronic devices 123a may be closely spaced, and another portion may be discretely spaced. In still other embodiments of the present application, the shape of the optoelectronic device 123a can be any other shape, such as a cylinder, prism, etc. In still other embodiments of the present application, the shape formed by the close-coupled arrangement may be any other shape such as cubes, rhombus, etc.; the distance between the divided photoelectric devices 123a may be completely different, or may be partially the same or partially different.

The protection pad assembly 140 shown in fig. 3 and 4 and the protection pad assembly 140-1 shown in fig. 8 are flat cylinders, and the photosensitive surface is square. In other embodiments of the present application, the protective pad assembly may be other shapes, such as square, rectangular, rhombic, etc. In other embodiments of the present application, the photosurface may be of other shapes, such as circular, elliptical, or other polygonal shapes.

When the photovoltaic module 123-1 of the close-coupled arrangement shown in fig. 5 is used, it can be used in combination with the protection pad module 140 shown in fig. 3, as shown in fig. 6. When the photovoltaic module 123-2 shown in FIG. 7 is used, it can be used in combination with the protection pad module 140-1 shown in FIG. 8, as shown in FIG. 9. The protection pad assembly 140-1 shown in fig. 8 includes four through holes a in which the four photo devices 123a of the photo assembly 123-2 are respectively located. In other embodiments of the present application, a different number of optoelectronic devices 123a may be accommodated in each through hole a, as desired.

The protection pad assembly 140 shown in fig. 3 and the protection pad assembly 140-1 shown in fig. 8 each include only one protection pad 141, and in other embodiments of the present application, the protection pad assembly may include a plurality of protection pads 141, the plurality of protection pads 141 may be stacked together, and the whole formed by stacking together may include one through hole a or may include a plurality of through holes a, which may be set according to needs. The protection pad assembly 140 shown in fig. 3 and the protection pad 141 of the protection pad assembly 140-1 shown in fig. 8 are integrated, and in other embodiments of the present application, the protection pad 141 may be a split type structure, which is formed by combining multiple parts. Alternatively, the structures of the multiple parts of the split structure may be identical, different, or some of the same or different, and may be set as required.

In this application, the difference between the first dimension of the protective pad assemblies 140, 140-1 extending in the z-axis direction (i.e., the thickness of the protective pad assemblies 140, 140-1) and the second dimension of the photovoltaic assemblies 123 extending in the z-axis direction (i.e., the thickness of the photovoltaic assemblies 123) may be between-0.3 mm and 0.3 mm. At this time, if the difference between the first dimension (i.e., the thickness) of the protection pad assembly 140, 140-1 and the second dimension (i.e., the thickness) of the optoelectronic assembly 123 is between-0.3 mm and 0, that is, the thickness of the protection pad assembly 140, 140-1 is slightly smaller than the thickness of the optoelectronic assembly 123 but not much different, it is ensured that the protection pad assembly 140, 140-1 cooperates with the optoelectronic assembly 123 to disperse the hard force and protect the optical guide, and it is ensured that the optoelectronic assembly 123 is fully contacted with the optical guide 122, and the optical guide 122 is not separated from the optoelectronic assembly 123 due to the placement of the protection pad assembly, thereby affecting the light guiding efficiency. At this time, the lower end surfaces of the protection pad assemblies 140, 140-1 are preferably aligned with the lower end surface of the optoelectronic assembly 123, so that the light sensing surface of the optoelectronic assembly 123 is located above the through hole a, which is more beneficial to receiving light. If the difference between the first dimension (i.e., the thickness) of the protection pad assembly 140, 140-1 and the second dimension (i.e., the thickness) of the optoelectronic assembly 123 is between 0 and 0.3mm, that is, the thickness of the protection pad assembly 140, 140-1 is slightly larger than the thickness of the optoelectronic assembly 123 but not much different, the protection pad assembly 140, 140-1 can be compressed to be close to the thickness of the optoelectronic assembly 123 when the protection pad assembly 140, 140-1 is subjected to the predetermined pressure as the coupling surface, and the upper end surface of the protection pad assembly 140, 140-1 is level with the upper end surface of the optoelectronic assembly 123, so that the optoelectronic assembly 123 can be fully contacted with the light guide 122 without affecting the light guiding efficiency. Of course, the first dimension (i.e., the thickness) of the protection pad assemblies 140, 140-1 and the second dimension (i.e., the thickness) of the optoelectronic assembly 123 can be the same. In the embodiment shown in fig. 4, 6 and 9, the first dimension of the protection pad assembly 140 and the protection pad assembly 140-1 extending in the z-axis direction (i.e., the thickness of the protection pad assembly 140-1) is the same as the second dimension of the photovoltaic assembly 123 extending in the z-axis direction (i.e., the thickness of the photovoltaic assembly 123).

In the embodiment shown in fig. 4, the photoelectric assembly 123 is nested in one through hole a of the protection pad assembly 140, and the sum of the third dimension of the protection pad assembly 140 extending in the second direction perpendicular to the z-axis direction (i.e., the difference between the outer diameter of the protection pad assembly 140 in the x-axis direction and the length of the through hole a in the x-axis direction) and the fourth dimension of the photoelectric assembly 123 extending in the x-axis direction (i.e., the length of the photoelectric assembly 123 in the x-axis direction) is equal to the fifth dimension of the scintillator 121 extending in the x-axis direction (i.e., the length of the scintillator 121 in the x-axis direction). In other embodiments of the present application, the sum of the third and fourth dimensions may be less than the fifth dimension, or the sum of the third and fourth dimensions may be slightly greater than the fifth dimension, e.g., about 0.1mm. Such an arrangement is more advantageous in improving the light receiving efficiency and improving the detection effect of the scintillation detector 100.

In the embodiment shown in fig. 1-9, the central axes of all the components of the probe assembly 120 are parallel to the z-axis. In other embodiments of the present application, the central axes of the various components in the probe assembly 120 may be non-parallel to the z-axis, with an included angle. In this application, the included angle between the central axis and the z-axis of each component in the probe assembly 120 may be 0-10 °.

In the embodiment shown in fig. 4, 6 and 9, the photovoltaic device 123a of the photovoltaic module 123 is nested in the through-hole a of the protection pad module 140, 140-1, so that the photovoltaic module can be tightly wrapped by the protection pad module, and the dimension of the through-hole a in the x-axis direction is equal to or slightly smaller than the dimension of the photovoltaic device 123a in the x-axis direction. In other embodiments of the present application, the dimension of the through hole a in the x-axis direction may also be greater than the dimension of the optoelectronic device 123a in the x-axis direction, i.e., when the optoelectronic device 123a is located within the through hole a, there is a gap between the optoelectronic device 123a and the edge of the through hole a.

In the present application, the scintillator may be selected from NaI (Tl) scintillator, csI (Tl) scintillator, laBr ₃ One or more of a scintillator, a BGO scintillator, a LYSO scintillator, and an RGBS scintillator, or other scintillators. In the present application, the photovoltaic component 123 may be selected from the group consisting of a silicon photomultiplier (otherwise known as a multi-pixel photon counter), a photodiode, an avalanche photodiode, a complementary metal oxide semiconductor, and a charge coupled deviceOne or more of them.

In the embodiment shown in fig. 1, the housing 110 includes an upper end cap 111 and a lower end cap 112, and in other embodiments of the present application, either one of the upper end cap 111 and the lower end cap 112 may be omitted, or may be opened at other portions of the housing 110, so long as the assembly of the probe assembly, the shock absorbing assembly, and the protection pad assembly into the housing 110 is achieved. The housing 110 plays a role of protection, light shielding and vibration resistance.

The present application further provides a method for preparing the scintillation detector, as shown in fig. 10, including step S10: one or more shock absorbing members 131 are interposed between the upper end surface of the probe assembly 120 and the housing 110, and/or between the lower end surface of the probe assembly 120 and the housing 110.

In other embodiments of the present application, the above-described method may further include the step of preparing the probe assembly 120: contacting the light-emitting surface of the scintillator 121 with the light guide 122 through a first optical coupling medium; and bringing the photosurface of the optoelectronic package 123 into contact with the light guide 122 via a second optical coupling medium.

In other embodiments of the present application, the step of preparing the probe assembly 120 may further include: the opto-electronic assembly 123 is connected to a circuit board 124.

In other embodiments of the present application, the method may further include the step of placing the probe assembly 120 into the housing 110. When the damper 131 is located between the lower end surface of the probe assembly 120 and the housing 110, the damper 131 may be placed in the housing 110 before the probe assembly 120 is placed in the housing 110. When the shock absorbing assembly 131 is located between the upper end surface of the probe assembly 120 and the housing 110, the probe assembly 120 may be placed in the housing 110 before the shock absorbing assembly 131 is placed in the housing 110.

In other embodiments of the present application, the above method may further include the step of protecting the pad assembly 140: the protection pad assembly 140 provided with the through hole a is sleeved on the photoelectric assembly 123, so that the photoelectric assembly 123 is positioned in the through hole a.

When preparing the scintillation detector 100 of the embodiment shown in fig. 1, the preparation method may comprise the following steps S1-S7:

s1: a lower end cap 112 of the housing 110 is mounted.

The lower end cap 112 is mounted to the body of the housing 110.

S2: the circuit board 124 is soldered with the optoelectronic device 123 a.

Here, the circuit board 124 is soldered to a surface opposite to the light-sensing surface of the optoelectronic device 123 a. In other embodiments of the present application, other ways of connecting the circuit board 124 to the optoelectronic device 123a may be used.

S3: the protection pad 141 is sleeved on the optoelectronic device 123a such that the optoelectronic device 123a is located in the through hole a of the protection pad 141.

In other embodiments of the present application, if the protection pad assembly 140 includes a plurality of protection pads 141, the plurality of protection pads 141 may be stacked together and then sleeved on the optoelectronic device 123 a. Each of the plurality of protection pads 141 may be sequentially sleeved on the optoelectronic device 123a, and the plurality of protection pads 141 may be stacked together after the sleeving is completed.

In other embodiments of the present application, if the protection pad 141 of the protection pad assembly 140 is a split structure, the parts of the split structure may be assembled into a whole and then sleeved on the optoelectronic device 123 a. The respective portions may be sequentially placed outside the photo device 123a, eventually causing the photo device 123a to be located in the through hole a of the protection pad 141.

S4: the first face of the light guide 122 is brought into contact with the photosensitive face of the optoelectronic device 123a using a second optical coupling medium.

Here, the first face of the light guide 122 may be any one of both faces of the light guide 122. The second optical coupling medium may be brushed onto the photosensitive surface of opto-electronic device 123a and then the first surface of light guide 122 may be placed over the second optical coupling medium.

S5: the light exit surface of the scintillator 121 is brought into contact with the second surface of the light guide 122 using a first optical coupling medium.

Here, the second face of the light guide 122 is the other face opposite to the first face. The first optical coupling medium may be brushed onto the second face of the light guide 122 and then the light exit face of the scintillator placed over the first optical coupling medium.

Here, the first optical coupling medium and the second optical coupling medium in the steps S4 and S5 may be the same or different, and specific materials are as described above and will not be described herein.

S6: a damper assembly 131 is inserted over the scintillator 121.

Here, the damper member 131 is interposed on a surface of the scintillator 121 opposite to the light-emitting surface. The shock absorbing assembly 131 may be one or more, as determined by the difference between the dimensions of the interior of the housing 110 and the sum of the dimensions of all the components of the probe assembly 120.

S7: an upper end cap 111 of the housing 110 is mounted.

In this application, since the difference between the size of the inside of the housing 110 and the sum of the sizes of all the components of the detecting assembly 120 is smaller than the size of the inserted one or more shock absorbing assemblies 131, a certain external force needs to be applied when the upper end cover 111 is installed to press the one or more shock absorbing assemblies 131 into the inside of the housing 110, so that the shock absorbing assemblies 131, the first optical coupling medium, the light guide 122, the second optical coupling medium, and other elastic materials will deform to a certain extent, thereby squeezing other components, so that a predetermined pressure is generated between the scintillator 121 and the light guide 122, and between the light guide 122 and the optoelectronic assembly 123. In this manner, by incorporating one or more shock absorbing assemblies 131, pressure can be applied to the entirety of the components within the housing 110 to compress the coupling surface, while the shock absorbing assemblies 131 can also provide cushioning protection, and the scintillation detector 100 can be used at high vibration impact levels. As mentioned above, the predetermined pressure is 10 to 300N, preferably 80 to 200N.

In other embodiments of the present application, the probe assembly 120 and the protection pad assembly 140 may be assembled before being placed in the housing 110.

The preparation method is simple, the prepared scintillation detector is good in detection effect, can be used under high vibration impact level, and can be applied to the fields of environmental monitoring, coal field logging, industrial measurement and the like.

The foregoing description is only exemplary embodiments of the present application and is not intended to limit the present application, and although the present application has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the technical solutions described in the foregoing embodiments, or equivalents may be substituted for some of the technical features thereof. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims (13)

1. The scintillation detector is characterized by comprising a shell and a detection assembly arranged in the shell, wherein the detection assembly comprises a scintillator, a light guide and a photoelectric assembly which are sequentially arranged along the axial direction of the shell;

the light emergent surface of the scintillator is contacted with the light guide through a first optical coupling medium;

The light guide is contacted with the light sensing surface of the photoelectric component through a second optical coupling medium;

one or more damping components are inserted between the upper end face of the detection component and the shell, and/or between the lower end face of the detection component and the shell; in the absence of an applied pressure, in a first direction axially parallel to the housing, the difference between the dimensions of the interior of the housing and the sum of the dimensions of all the components of the probe assembly is less than the dimensions of the one or more shock absorbing assemblies being plugged;

the one or more shock absorbing members are resilient and the first optical coupling medium, the light guide and/or the second optical coupling medium are resilient.

2. The scintillation detector of claim 1, wherein a predetermined pressure is generated between the scintillator and the light guide, and between the light guide and the optoelectronic assembly due to compression with the one or more shock absorbing assemblies interposed therebetween; the predetermined pressure is 10N-300N.

3. The scintillation detector of claim 1 or 2, wherein the shock absorbing assembly comprises a shock pad and/or a spring.

4. The scintillation detector of claim 1, wherein the scintillation detector further comprises:

and a protective pad assembly disposed around the optoelectronic assembly.

5. The scintillation detector of claim 4, wherein said protective pad assembly comprises a protective pad or a plurality of protective pads disposed in an overlapping relationship, said protective pads being of unitary construction or being formed from a plurality of sections;

the protection pad assembly comprises a through hole, and the photoelectric assembly comprises one or more photoelectric devices, wherein the one or more photoelectric devices are positioned in the through hole; or the protection pad assembly comprises a plurality of through holes, and the photoelectric assembly comprises a plurality of photoelectric devices which are respectively positioned in the plurality of through holes.

6. The scintillation detector of claim 4, wherein a difference between a first dimension of said protective pad assembly extending along said first direction and a second dimension of said optoelectronic assembly extending along said first direction is between-0.3 mm and 0.3 mm.

7. The scintillation detector of claim 3, wherein the protective pad assembly HAs a shore hardness of greater than or equal to 20HA.

8. The scintillation detector of claim 3, wherein the protective pad assembly is made of one or more of the following materials: silica gel, foam, rubber, sponge, and resin.

9. The scintillation detector of claim 1, wherein the light guide has a light transmittance of 80% or more; the light guide is made of one or more of the following materials: silicone gel, optical silicone grease, optical silicone oil, transparent resin, transparent rubber, transparent ceramic, transparent glass and transparent crystal.

10. The scintillation detector of claim 1, wherein the first optical coupling medium and the second optical coupling medium are made of silicone grease and/or silicone oil.

11. The scintillation detector of claim 1, wherein the scintillator comprises a reflective layer, a light exit window of a light exit face of the scintillator not being covered by the reflective layer; the reflecting layer is selected from one or more of an air layer specular reflecting layer, an air layer-free specular reflecting layer, an air layer diffuse reflecting layer and an air layer-free diffuse reflecting layer; and/or

The optoelectronic component is selected from one or more of a silicon photomultiplier, a photodiode, an avalanche photodiode, a complementary metal oxide semiconductor, and a charge coupled device.

12. The scintillation detector of claim 1, wherein the detection assembly further comprises a circuit board disposed below the optoelectronic assembly.

13. A method of manufacturing a scintillation detector, comprising:

one or more damping components are inserted between the upper end surface of the detection component and the shell and/or between the lower end surface of the detection component and the shell;

the detection assembly is arranged in the shell and comprises a scintillator, a light guide and a photoelectric assembly which are sequentially arranged along the axial direction of the shell; the light emergent surface of the scintillator is contacted with the light guide through a first optical coupling medium; the light guide is contacted with the light sensing surface of the photoelectric component through a second optical coupling medium;

wherein, in a first direction parallel to the housing axis, the difference in size of the housing interior and the sum of the sizes of all components of the probe assembly is less than the size of the one or more shock absorbing assemblies being inserted without the application of pressure;

the one or more shock absorbing members are resilient and the first optical coupling medium, the light guide and/or the second optical coupling medium are resilient.