CN117686190A - Method, device, equipment and storage medium for detecting light-emitting chips in wafer - Google Patents
Method, device, equipment and storage medium for detecting light-emitting chips in wafer Download PDFInfo
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Abstract
The invention discloses a detection method, a detection device, computer equipment and a storage medium for a light-emitting chip in a wafer, which are used for solving the problem that the detection result of a single chip level cannot be accurately obtained under the condition of no contact in the existing detection technology. The detection method comprises the following steps: obtaining photoluminescence data of the luminous chips in the wafer through photoluminescence detection of the wafer; preprocessing the reference electroluminescent data to obtain the luminous data of the view angle level; mapping photoluminescence data and luminous data of the view angle level to obtain calibrated luminous data; and estimating the calibrated luminous data to obtain single-chip-level luminous data.
Description
Technical Field
The present invention relates to the field of chip production, and in particular, to a method and apparatus for detecting a light emitting chip in a wafer, a computer device, and a storage medium.
Background
A Light-Emitting Diode (LED) is a semiconductor Light source that directly converts electric energy into Light energy using a semiconductor chip as a Light-Emitting material. The Mini LED (sub-millimeter light emitting diode) refers to an LED device with the size of 0.1 mm-0.2 mm, and the Micro LED (Micro light emitting diode) is a smaller LED device with the size of 10 mu m-100 mu m. Compared with the traditional LED, the particles of the Mini/Micro LED are smaller, so that the Mini/Micro LED light emitting chips are arranged in the Wafer (Wafer) with the same size, and the density of the light emitting chips of the Wafer is higher than that of the traditional LED light emitting chips. The LED display screen is more bright in color and fine in picture and does not generate halation due to the fact that the LED display screen is composed of the Mini/Micro LED-based wafers.
In the production process of the light emitting chips in the wafer, the light emitting chips need to be detected, so that the quality of the finally produced Mini/Micro LEDs is ensured. In the prior art, detecting the light emitting chips in the wafer mainly includes contact detection and non-contact detection. A typical method of contact detection is EL (electroluminescence) detection, and a typical method of noncontact detection is PL (Photoluminescence) detection, and the two detection modes have different excitation modes, so that there is a certain difference in detection accuracy. The EL can obtain a single-chip level detection result, but when the EL is used for detecting the light-emitting chip, the light-emitting chip is easily damaged in the detection process because of contact detection and high measurement current density. While PL detection does not require direct contact with the chip, and effectively prevents the chip from being damaged by measurement, the result obtained by PL detection is of FOV (Field of View) level, and the detection accuracy cannot reach the single chip level detection standard.
Disclosure of Invention
The embodiment of the invention provides a detection method, a detection device, computer equipment and a storage medium for a light-emitting chip in a wafer, which are used for solving the problem that the detection result of a single chip level cannot be accurately obtained under the condition of no contact in the existing detection technology.
A detection method of a light emitting chip in a wafer comprises the following steps:
obtaining photoluminescence data of a luminous chip in a wafer through photoluminescence detection of the wafer;
preprocessing the reference electroluminescent data to obtain the luminous data of the view angle level;
calibrating the photoluminescence data and the luminous data of the view angle level to obtain calibrated luminous data;
and carrying out space estimation on the calibrated luminous data to obtain single-chip-level luminous data.
In one possible design, the detecting the light emitting chip by photoluminescence, obtaining photoluminescence data of the light emitting chip, includes:
obtaining original photoluminescence spectrum data through the photoluminescence detection luminescence chip;
performing signal smoothing processing on the photoluminescence spectrum data to obtain smoothed spectrum data;
calculating the wavelength of the smoothed spectrum data to obtain photoluminescence wavelength;
and taking the photoluminescence wavelength as photoluminescence data of the light emitting chip.
In one possible design, the smoothing the photoluminescence spectrum data to obtain smoothed spectrum data includes:
Removing the miscellaneous peak data in the photoluminescence spectrum data to obtain spectrum peak data from which the miscellaneous peak data interference is removed;
and carrying out signal smoothing processing on the spectrum peak value data to obtain the smooth spectrum data.
In one possible design, the preprocessing the reference electroluminescent data to obtain the luminescent data of the view angle level includes:
calculating a median in the reference electroluminescent data;
screening out the reference electroluminescent data in the adjacent area of the median as effective luminescent data;
and downsampling the effective luminous data to obtain luminous data of the view angle level.
In one possible design, the reference electroluminescent data is obtained by:
determining an epitaxial structure of the wafer;
in the epitaxial structure, electroluminescent data of any wafer are acquired;
and taking the electroluminescence data as reference electroluminescence data of all wafers in the epitaxial structure.
In one possible design, the estimating the calibrated light emission data to obtain light emission data at a single chip level includes:
the associated data which are consistent with the data distribution condition of the calibrated luminous data are estimated;
Adding the data quantity of the calibrated luminous data with the data quantity of the associated data to obtain an estimated total number;
and if the estimated total number is consistent with the data quantity of the reference electroluminescent data, combining the calibrated luminescent data and the associated data into the luminescent data of the single chip level.
In one possible design, the estimating the associated data corresponding to the data distribution of the calibrated light emission data includes:
based on the data distribution condition of the calibrated luminous data, all the view angle areas in the wafer are marked;
selecting adjacent areas in all the view angle areas, and taking the light-emitting chips between any pair of light-emitting chips in the adjacent areas as chips to be predicted;
according to the luminous data of each view angle area, the luminous data of the chip to be predicted is estimated;
and taking the luminous data of the chip to be predicted as the associated data of the calibrated luminous data.
A device for detecting light emitting chips in a wafer, comprising:
the detection module is used for detecting the wafer through photoluminescence and obtaining photoluminescence data of the luminous chips in the wafer;
The preprocessing module is used for preprocessing the reference electroluminescent data to obtain the luminous data of the view angle level;
the calibration module is used for calibrating the photoluminescence data and the luminous data of the view angle level to obtain calibrated luminous data;
and the presumption module is used for carrying out space presumption on the calibrated luminous data to obtain single-chip-level luminous data.
A computer device comprising a memory, a processor and a computer program stored in the memory and executable on the processor, the processor implementing the steps of the method for detecting light emitting chips in a wafer described above when the computer program is executed.
A computer readable storage medium storing a computer program which, when executed by a processor, performs the steps of the method for inspecting light emitting chips in a wafer described above.
In the prior art, photoluminescence data detected by non-contact Photoluminescence (PL) can only achieve the effect of detecting the angle of view level, so in the method, the device, the computer equipment and the storage medium for detecting the light emitting chip in the wafer, reference electroluminescence data of a single chip level is preprocessed to obtain the light emitting data of the angle of view level. Because the light-emitting data and the photoluminescence data of the view angle level are of the view angle level, the light-emitting data and the photoluminescence data have a corresponding relationship, and the data are calibrated according to the corresponding relationship, so that calibrated light-emitting data is obtained. At this time, the calibrated light-emitting data is corrected data, but the data is still in the field angle level, that is, the data amount is consistent with the data amount of the preprocessed light-emitting data. In summary, the invention utilizes the detection characteristic that photoluminescence does not need to contact a light-emitting chip, and combines the precision characteristic of the single-chip level of the electroluminescence, so that the invention substantially combines the respective advantage characteristics of photoluminescence and electroluminescence, thereby obtaining the accurate detection result of the single-chip level light-emitting chip under the non-contact condition.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments of the present invention will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a method for inspecting light emitting chips in a wafer according to an embodiment of the invention;
FIG. 2 is a schematic diagram of smooth luminescence data of a method for inspecting luminescence chips in a wafer according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating a mapping relationship of a method for inspecting light emitting chips in a wafer according to an embodiment of the invention;
FIG. 4 is a schematic diagram of a wafer before a spatial estimation process of a method for inspecting light emitting chips in the wafer according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a wafer after a spatial estimation process of a method for inspecting light emitting chips in the wafer according to an embodiment of the present invention;
FIG. 6 is a schematic diagram showing a coincidence ratio of a light emitting chip in a wafer according to an embodiment of the invention;
FIG. 7 is a schematic diagram showing a difference distribution of a method for inspecting light emitting chips in a wafer according to an embodiment of the invention;
FIG. 8 is a schematic diagram of a device for inspecting light emitting chips in a wafer according to an embodiment of the invention;
FIG. 9 is a schematic diagram of a computer device in accordance with an embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the prior art, a main detection means of a Mini/Micro LED light emitting chip is Electroluminescence (EL) detection, and the electroluminescence is a physical phenomenon that electrons excited by an electric field collide with a light center by generating the electric field at the voltage of two electrodes, and cause the electrons to transition, change and recombine between energy levels to cause luminescence. In electroluminescence detection, when the chip is excited by a current, the chip may be damaged due to a high current density. In addition, the electroluminescence detection is a single chip detection, and when the number of the luminous chips in one Wafer (Wafer) is too large, the detection mode is too slow, so that the production efficiency is greatly influenced.
Photoluminescence detection refers to PL (Photoluminescence) detection, and the basic principle of photoluminescence is that under the irradiation of external light, a material absorbs energy and a photoluminescence phenomenon occurs under the excitation of the absorbed energy. Photoluminescence (PL) detection has the advantages of non-contact, high sensitivity, high time resolution, broad wavelength range, and relatively simple and fast. However, the wavelength result obtained by photoluminescence detection is at the FOV (Field Of View) level, that is, the wavelength detection result Of photoluminescence Of all the light emitting chips in the same FOV Field Of View (FOV area) is the same. This is different from the detection of each chip one by one in electroluminescence, so that the detection accuracy at the single chip level is obtained, and the detection result at the single chip level is more accurate than the detection result at the angle of view level. Therefore, the detection result of photoluminescence cannot be in one-to-one correspondence with the detection result of electroluminescence.
The embodiment of the invention provides a detection method of a light emitting chip in a wafer, aiming at the problems, and calibrated light emitting data is obtained by downsampling reference light emitting data and photoluminescence data. And then, carrying out space estimation on the calibrated luminous data, thereby realizing one-to-one correspondence with the electroluminescent data. Namely, the photoluminescence data of the angle of view level is converted into the luminescence data of the single chip level, which is equivalent to the electroluminescence detection result, by using a corresponding data processing technology, so that the one-to-one correspondence between photoluminescence and the electroluminescence detection result is realized. That is, the embodiment of the invention provides a manner for improving the photoluminescence data precision, so that the non-contact photoluminescence detection manner can replace the contact type electroluminescence detection manner. The detection method can be implemented in a stand-alone computer device or a device cluster composed of a plurality of computer devices, wherein the computer devices include, but are not limited to, industrial computers, commercial computers, servers, and the like.
In one embodiment, as shown in fig. 1, a method for detecting light emitting chips in a wafer is provided, and the method is applied in an industrial computer, and the method is described by using the industrial computer to detect high-density small-particle light emitting chips on the wafer, where the light emitting chips include but are not limited to Micro LEDs, mini LEDs, and the like, and the method includes the following steps:
s10: and obtaining photoluminescence data of the luminous chips in the wafer through photoluminescence detection of the wafer.
And detecting the wafer by using a Photoluminescence (PL) technology, and further obtaining photoluminescence data of the luminous chips in the wafer. Photoluminescence (PL) is a kind of cold luminescence, and refers to a process in which a substance absorbs photons (or electromagnetic waves) and re-radiates them. From quantum mechanics theory, this process can be described as a process in which a substance absorbs photons to transition to an excited state of a higher energy level and then returns to a low energy state while emitting photons. Photoluminescence can be classified into Fluorescence (Fluorescence) and Phosphorescence (Phosphorescence) according to a delay time. Photoluminescence data includes, but is not limited to, photoluminescence wavelengths, photoluminescence Spectrum (spectroum) data, and the like.
It is noted that in this embodiment, since the Photoluminescence (PL) technology is adopted, when detecting a plurality of light emitting chips in a wafer, it is not necessary to detect each light emitting chip one by one as in Electroluminescence (EL), but it is possible to detect a plurality of light emitting chips at a time, so that the detection efficiency is effectively improved, and the detection time is saved.
S20: and preprocessing the reference electroluminescent data to obtain the luminescent data of the view angle level.
Among them, electroluminescence (EL) is a physical phenomenon in which electrons excited by an electric field collide with a luminescence center by generating an electric field by applying a voltage to both electrodes, thereby causing a jump, change, and recombination of electron orders to cause luminescence. The reference electroluminescence data may be obtained by detecting any wafer through electroluminescence, or may be obtained by presetting through manual experience, which is not limited herein. The reference electroluminescent data includes, but is not limited to, wavelength, spectral data, and the like. The reference electroluminescence data may be wavelength data or spectrum data, and is not limited herein. The preprocessing mode includes, but is not limited to, downsampling, data selection and the like. Since the preprocessing is to process the reference electroluminescence data of a single chip level into the luminescence data of a field angle level, the preprocessing is a processing to substantially reduce the data amount of the luminescence data.
Note that, here, the emission data at the angle of view level is obtained by converting the reference electroluminescence data at the single chip level, and thus the emission data at the angle of view level is smaller than the data amount of the reference electroluminescence data. The need to pre-process the reference electroluminescent data is due to the small amount of data in the photoluminescent data compared to the reference electroluminescent data, i.e. the accuracy of the electroluminescent data is greater than the accuracy of the photoluminescent data. For the subsequent accurate calibration of the photoluminescent data, it is therefore necessary to pre-process, i.e. reduce the accuracy of, the reference electroluminescent data, so as to obtain the emission data at the field angle (FOV) level consistent with the accuracy of the photoluminescent data, so that the photoluminescent data is accurately calibrated by the emission data at the field angle level in the subsequent steps.
S30: calibrating the photoluminescence data and the luminous data of the view angle level to obtain calibrated luminous data.
Analyzing the data rules of the photoluminescence data and the luminous data of the view angle level, and summarizing the corresponding relation of the photoluminescence data and the luminous data according to the data rules of the photoluminescence data and the luminous data of the view angle level, and calibrating the photoluminescence data to obtain calibrated luminous data. The calibration method may be to calibrate the photoluminescence data according to the mapping relation between the photoluminescence data and the light-emitting data of the view angle level, or to input the photoluminescence data and the light-emitting data of the view angle level into a deep learning model to obtain the relation between the photoluminescence data and the light-emitting data, so as to calibrate the photoluminescence data, which is not limited herein. The method for mapping the photoluminescence data and the luminous data of the view angle level comprises, but is not limited to, obtaining a mapping relationship between the photoluminescence data and the luminous data of the view angle level according to the change relationship of the photoluminescence data and the luminous data of the view angle level, or estimating a data trend of the photoluminescence data and the luminous data of the view angle level to obtain the mapping relationship of the photoluminescence data and the luminous data of the view angle level.
It should be noted that, since the photoluminescence data is obtained through Photoluminescence (PL) detection, the detection accuracy is at the field angle (FOV) level, that is, the photoluminescence data is also at the field angle level, so in step S30, the photoluminescence data and the field angle level may be mapped, and the photoluminescence data may be calibrated according to the mapping result, so as to ensure the accuracy of the calibration result, and the luminescence data may be accurately estimated in the subsequent steps.
In addition, calibrating the photoluminescence data is a process of correcting and rechecking the photoluminescence data precision and dynamically processing errors generated in the data processing in time, so that corrected luminescence data, namely calibrated luminescence data, is obtained. This step effectively ensures the accuracy and precision of the luminescence data.
S40: and carrying out space estimation on the calibrated luminous data to obtain single-chip-level luminous data.
And estimating the calibrated luminous data to obtain the luminous data of a single chip level. The method for estimating the calibrated light-emitting data includes, but is not limited to, spatial estimation, trend estimation, and the like.
For example, when the electroluminescence is detected by the wafer, the electrode probe is used to detect the luminescence chips on the wafer one by one to obtain the electroluminescence data of a single chip level, so in this embodiment, the calibrated luminescence data is spatially estimated in step S40, so that the luminescence data of the same data amount as the luminescence data of the single chip level, that is, the luminescence data consistent with the electroluminescence data precision value and the data amount is obtained, thereby realizing the luminescence data conforming to the Electroluminescence (EL) detection precision by Photoluminescence (PL) detection.
In the prior art, since photoluminescence data detected by non-contact Photoluminescence (PL) can only achieve the effect of detecting the angle of view level, in this embodiment, reference electroluminescence data of a single chip level is preprocessed to obtain luminescence data of the angle of view level. Because the light-emitting data and the photoluminescence data of the view angle level are of the view angle level, the light-emitting data and the photoluminescence data have a corresponding relationship, and the data are calibrated according to the corresponding relationship, so that calibrated light-emitting data is obtained. At this time, the calibrated light-emitting data is corrected data, but the data is still in the field angle level, that is, the data amount is consistent with the data amount of the light-emitting data after downsampling. In summary, the invention utilizes the detection characteristic that photoluminescence does not need to contact a light-emitting chip, and combines the precision characteristic of the single-chip level of the electroluminescence, so that the invention substantially combines the respective advantage characteristics of photoluminescence and electroluminescence, thereby obtaining the accurate detection result of the single-chip level light-emitting chip under the non-contact condition.
In one embodiment, in step S10, photoluminescence data of the light emitting chip is obtained by photoluminescence detection of the light emitting chip, which specifically includes the following steps:
s11: and obtaining original photoluminescence spectrum data through the photoluminescence detection luminescence chip.
S12: and carrying out signal smoothing processing on the photoluminescence spectrum data to obtain smoothed spectrum data.
S13: and calculating the wavelength of the smoothed spectrum data to obtain the photoluminescence wavelength.
S14: and taking the photoluminescence wavelength as photoluminescence data of the light emitting chip.
And obtaining original photoluminescence spectrum data through a photoluminescence detection luminescence chip, and then carrying out signal smoothing processing on the photoluminescence spectrum data to obtain smooth spectrum data. Then, the wavelength of the smoothed spectral data is calculated to give the photoluminescence wavelength. Finally, the photoluminescence wavelength is taken as photoluminescence data of the light emitting chip. The signal smoothing processing refers to data processing for suppressing outliers or noise in the photoluminescence spectrum data, and aims to make the photoluminescence spectrum data more readable and interpretable. Methods of signal smoothing include, but are not limited to, laplacian smoothing, moving smoothing, and the like. The photoluminescence Wavelength may be a dominant Wavelength (Wavelength Dominant, abbreviated as WLD) or a Peak Wavelength (WLP), and is not limited herein.
It should be noted that, in this embodiment, the photoluminescence is used to detect the light-emitting chip, so that the detection probe does not need to be in direct contact with the light-emitting chip, and the chip is effectively prevented from being damaged in the detection process. In addition, the photoluminescence spectrum data is subjected to signal smoothing processing, so that abnormal signal data in the data is effectively processed, the abnormal data is prevented from affecting the accuracy of a subsequent detection result, and a more accurate single-chip-level light-emitting chip detection result is obtained under the condition of no contact.
In one embodiment, in step S12, the photoluminescence spectrum data is subjected to spectrum smoothing processing to obtain smoothed spectrum data, which specifically includes the following steps:
s121: and removing the miscellaneous peak data in the photoluminescence spectrum data to obtain spectrum peak data from which the miscellaneous peak data interference is removed.
S122: and carrying out signal smoothing processing on the spectrum peak value data to obtain the smooth spectrum data.
Among the methods for removing the peak data include, but are not limited to, fitting using gaussian functions, analyzing spectral data using clustering algorithms, removing discrete data points, etc. The final spectral peak data is that the spectral data reaches a peak, including but not limited to, the maximum or minimum of the spectral data.
For example, the photoluminescence spectrum data is processed by using gaussian peak-splitting fitting, so that some of the impurity peak interference in the photoluminescence spectrum data is removed, and the expected spectrum peak data is reserved, namely, the main component of the photoluminescence spectrum data is extracted, so that the spectrum peak data is obtained. And then carrying out signal smoothing processing by utilizing the spectrum peak value data to calculate smooth spectrum data.
It should be noted that, the present embodiment aims to extract the most effective data points in the photoluminescence spectrum data before performing the spectrum data smoothing process. That is, the peak value data in the extracted photoluminescence spectrum data is less in data quantity, and the trend characteristics of the spectrum data are accurately included, so that the obtained smooth spectrum data after signal smoothing processing is performed according to the spectrum peak value data is more accurate than the data obtained by directly performing signal smoothing processing on the photoluminescence spectrum data, and the signal smoothing processing process is more efficient due to the reduction of the data quantity. In this embodiment, the obtained smooth spectrum data is more accurate than the original data, so that the obtained detection result of the light emitting chip with a single chip level will be more accurate in the subsequent steps.
In one embodiment, in step S122, the smooth spectrum data is obtained by performing a smoothing process on the spectrum peak data, which specifically includes the following steps:
s91: and carrying out least square fitting on the appointed high-order polynomial through a preset fitting order to obtain a weighted weight.
S92: and carrying out weighted filtering on the photoluminescence spectrum data in a preset smooth window through the weighted weight to obtain the smooth spectrum data.
As shown in fig. 2, the present embodiment essentially provides a method for smoothing photoluminescence spectrum data, which mainly performs weighted filtering on data in a preset smoothing window, wherein the weighted weight is obtained by performing least square fitting on a given higher-order polynomial.
The method is mainly used for processing the data according to the preset fitting order and the length of the smooth window, wherein the smaller the length value of the smooth window is, the closer to a real curve is, and the larger the length value of the smooth window is, the smoother the curve transition is. The fitting order is also generally called a K value, and the larger the K value is, the closer the K value is to the real curve, the smaller the K value is, and the stronger the smoothing effect is. The value of K is limited by the length of the smoothing window, and if the value is too large, fitting can be problematic, so the value of K needs to be smaller than the length value of the smoothing window.
It should be noted that, in this embodiment, the SG filtering method (all called Savitzky Golay Filter) is substantially adopted, so that the filtering smoothing is performed, and meanwhile, the change information of the signal can be more effectively reserved, so that the obtained smooth spectrum data is ensured to retain the complete change information, the accuracy of the smooth spectrum data is improved, the accuracy of photoluminescence data obtained by using the spectrum data in the subsequent step is improved, and the accuracy of the finally obtained single-chip-level luminescence data is ensured.
In one embodiment, in step S20, the reference electroluminescent data is preprocessed to obtain the light emitting data of the view angle level, which specifically includes the following steps:
s21: and calculating the median of the reference electroluminescent data.
S22: and screening out the reference electroluminescent data in the adjacent area of the median as effective luminescent data.
S23: and downsampling the effective luminous data to obtain luminous data of the view angle level.
Downsampling, i.e., downsampling, refers to a technique of multi-rate digital signal processing or a process of reducing the sampling rate of a signal, which is commonly used in the digital signal processing field, for reducing the data transmission rate or the data size. The Median (Median), also known as the Median value, is a numerical value in a reference electroluminescent data distribution, and divides the data set into two equal numbers of upper and lower parts.
For example, after calculating the median of the reference electroluminescent data, the median is selectedSpectral data at nm as effective luminescence data. I.e. the median data +.>The adjacent area of nm is an effective area, and all luminous data in the effective area are effective luminous data. And then downsampling the effective luminous data to obtain the luminous data of the view angle level.
It should be noted that, in this embodiment, the data points near the median of the reference electroluminescent data are substantially selected as the effective luminescent data, that is, the data points most capable of representing the reference electroluminescent data, which not only reduces the data amount processed during downsampling, but also enables the luminescent data of the view angle level obtained based on the effective luminescent data to more accurately include the data features of the reference electroluminescent data, that is, the obtained luminescent data of the view angle level will be more accurate, so that in the subsequent step, the detection result of the luminescent chip of the single chip level obtained based on the luminescent data of the view angle level will also be more accurate.
In addition, this embodiment corresponds to the embodiments of steps S121 to S122, and the two embodiments respectively perform effective data selection during the processing of the photoluminescence data and the reference electroluminescence data, so that when the processing results (the smooth luminescence data and the luminescence data of the view angle level) of the two steps are mapped in the subsequent steps, the mapping relationship will be more accurate, the obtained calibrated luminescence data will also be more accurate, and it is beneficial to finally obtain the luminescence data of the single chip level.
In one embodiment, the reference electroluminescence data in step S20 or step S21 is obtained by:
s211: and determining the epitaxial structure of the wafer.
S212: in the epitaxial structure, electroluminescent data of any one of the light emitting chips is obtained.
S213: and taking the electroluminescence data as reference electroluminescence data of all wafers in the epitaxial structure.
Determining the epitaxial structure of the current wafer, acquiring Electroluminescence (EL) data of any one light emitting chip in the same epitaxial structure, and finally taking the EL data as reference EL data of all wafers in the epitaxial structure. Wherein, epitaxial structure refers to deposition of a thin monocrystalline layer on a monocrystalline substrate, the freshly deposited monocrystalline layer being referred to as an epitaxial layer.
It should be noted that the present embodiment essentially provides a method for obtaining the reference electroluminescence data, since the electroluminescence data of any one light emitting chip in one epitaxial structure can be used as the reference value of other wafers in the epitaxial structure. Compared with the prior art, the method for detecting the light emitting chips on the wafer one by one only needs to detect any light emitting chip in the same epitaxial structure, the same epitaxial structure only needs to acquire a reference value once, and then the detection result of each light emitting chip can be obtained only through the photoluminescence detection wafer, so that the detection efficiency of the light emitting chips is effectively improved in the whole process.
In one embodiment, in step S30, the photoluminescence data and the light emission data of the view angle level are mapped to obtain calibrated light emission data, which specifically includes the following steps:
s31: and comparing and analyzing the photoluminescence data, the reference electroluminescence data and the luminous data of the view angle level to obtain the mapping relation of the photoluminescence data, the reference electroluminescence data and the luminous data.
S32: and calibrating the photoluminescence data through the mapping relation to obtain the calibrated luminescence data.
The photoluminescence data, the reference electroluminescence data and the luminous data of the view angle level are compared and analyzed, and the same mapping relation exists among the photoluminescence data, the reference electroluminescence data and the luminous data, so that the photoluminescence data are calibrated through the mapping relation, and calibrated luminous data are obtained. The calibration is a method for checking the accuracy of photoluminescence data during detection, and mainly aims to dynamically eliminate errors possibly existing in the detection process in time. The mapping relationship includes, but is not limited to, linear relationship, polynomial mapping relationship, and the like. Methods for determining these mappings include, but are not limited to, drawing, functional, deep learning, and the like.
It should be noted that the trend of data based on the data detected by Photoluminescence (PL) and Electroluminescence (EL) will be consistent, that is, the trend of data of electroluminescence and photoluminescence data detected by the same wafer will be consistent. The present embodiment substantially finds that the same mapping relationship exists among the photoluminescence data, the reference electroluminescence data, and the emission data of the angle of view level based on this characteristic, and can therefore pass through the mapping relationship. The photoluminescence data is calibrated according to the mapping relation, so that the calibrated luminescence data is more accurate, and the luminescence data of a single chip level can be obtained efficiently and accurately without contacting with a luminescence chip.
In one embodiment, in step S31, the photoluminescence data, the reference electroluminescence data, and the luminescence data of the view angle level are compared and analyzed to obtain a mapping relationship of the three, which specifically includes the following steps:
s311: the first coordinate axis is marked with a photoluminescence reference value, and the second coordinate axis is marked with an electroluminescence reference value, so that a plane coordinate system is generated.
S312: and drawing the photoluminescence data, the reference electroluminescence data and the luminous data of the view angle level on the plane coordinate system to obtain the linear relation of the photoluminescence data, the reference electroluminescence data and the luminous data of the view angle level.
S313: and analyzing the linear relation of the three to obtain the mapping relation of the three.
In the same plane coordinate system, the photoluminescence data, the reference electroluminescence data and the luminescence data of the view angle level are drawn, so that the linear relation of the photoluminescence data, the reference electroluminescence data and the luminescence data of the view angle level is obtained, and the linear relation is shown in fig. 3. It can be seen from the figure that there is an obvious linear relationship between the three, so that there is substantially the same mapping relationship between the three.
The present embodiment substantially confirms that there is a clear linear relationship among the photoluminescence data, the reference electroluminescence data, and the emission data at the angle of view level. The mapping relation of the three is more reasonable due to the obvious linear relation. According to the mapping relation, the light-emitting data of the video angle level can be accurately calibrated in the subsequent steps, so that the accurate calibrated light-emitting data is obtained, and the light-emitting data of the single chip level can be obtained efficiently and accurately even if the light-emitting chip is not contacted.
In one embodiment, in step S40, the calibrated light emission data is presumed to obtain light emission data of a single chip level, which specifically includes the following steps:
S41: and estimating associated data which are consistent with the data distribution condition of the calibrated luminous data.
S42: and adding the data quantity of the calibrated luminous data with the data quantity of the associated data to obtain the estimated total number.
S43: and if the estimated total number is consistent with the data quantity of the reference electroluminescent data, combining the calibrated luminescent data and the associated data into the luminescent data of the single chip level.
In this embodiment, the associated data is estimated based on the data distribution of the luminescence data, which is essentially based on spatial estimation of the calibrated luminescence data, so as to obtain luminescence data of a single chip level, and the spatial estimation method includes, but is not limited to, interpolation, fitting, and other manners.
For example, interpolation processing is performed on the calibrated luminous data, and associated data of the calibrated luminous data are estimated. And then obtaining the data quantity of the calibrated luminous data and the sum of the data quantity of the associated data, namely the estimated total number, finally judging whether the estimated total number is consistent with the data quantity of the reference photoelectric luminous data, and if so, taking the calibrated luminous data and the associated data as the luminous data of a single chip level. The correlation data refers to the estimated approximation value according to the data points in the calibrated luminous data, and can be the fitting of each data point in the calibrated luminous data. The interpolation process can be performed by calculating the approximate function of the function at the finite point and further calculating the value of the function at other points, and the interpolation process includes, but is not limited to, lagrange interpolation, newton interpolation, hermite interpolation, etc.
It should be noted that, the present embodiment is essentially an important step of processing the calibrated light-emitting data into the light-emitting data of the single chip level, specifically, increasing the data amount of the calibrated light-emitting data to the data amount of the single chip level, so as to increase the accuracy of the calibrated light-emitting data to the single chip level. Fig. 4 is a schematic wafer diagram of the calibrated luminescence data (dominant wavelength), and fig. 5 is a schematic wafer diagram of the luminescence data at a single chip level (dominant wavelength). It can be intuitively seen from the figure that the accuracy of fig. 5 after the data amount is increased is improved, so that the single-chip-level light-emitting data can be efficiently and accurately obtained even without contacting the light-emitting chip.
In one embodiment, in step S41, the associated data corresponding to the data distribution condition of the calibrated light emitting data is estimated, which specifically includes the following steps:
s411: and marking out all the view angle areas in the wafer based on the data distribution condition of the calibrated luminous data.
S412: and selecting adjacent areas in all the view angle areas, and taking the light emitting chips between any light emitting chip in each pair of adjacent areas as chips to be predicted.
S413: and according to the luminous data of each field angle area, the luminous data of the chip to be predicted is estimated.
S414: and taking the luminous data of the chip to be predicted as the associated data of the calibrated luminous data.
Since the calibrated light emission data is still at the field angle level, the light emission data of all the light emitting chips in the same field angle region are the same, and therefore the field angle region can be divided according to the calibrated light emission data (substantially, the light emitting chips of the same light emission data are divided in the same field angle region) in step S411.
For example, the wafer is divided into two field angle regions based on the data distribution of the calibrated luminescence data: region a and region B. Since the wafer has only two field angle regions, the a region is adjacent to the B region. The light emitting chip at the midpoint position of the A area is selected as a designated chip C of the A area, the light emitting chip at the midpoint position of the B area is selected as a designated chip D of the B area, and all the light emitting chips between the designated chip C and the designated chip B are used as chips to be predicted. And estimating the light-emitting data of each chip to be predicted according to the light-emitting data of the area A and the light-emitting data of the area B in the calibrated light-emitting data. The estimation method may be interpolation or fitting, and is not limited herein. And finally, taking the luminescence data of the chip to be predicted as the correlation data of the calibrated luminescence data.
It should be noted that, in this embodiment, based on the data characteristics of the light emitting data at the view angle level (the light emitting data of all the light emitting chips in the same view angle area are consistent), and the characteristics of the light emitting data (the continuity and the maintainability, that is, the adjacent light emitting data will maintain a certain continuous characteristic), reasonable estimation is performed on the associated data, so as to obtain more accurate association. And then, in step S43, the correlation data is combined with the calibrated light-emitting data to obtain a more accurate detection result, that is, more accurate light-emitting data of a single chip level.
In an embodiment, after step S40, that is, after the calibrated light emission data is estimated, the detection method further includes the following steps:
s51: and the single-chip-level luminous data are corresponding to the reference electroluminescent data, and the coincidence rate of the single-chip-level luminous data and the reference electroluminescent data is obtained.
S52: and if the coincidence rate does not reach the expected probability, calibrating the photoluminescence data again to estimate the single-chip-level luminescence data again.
Specifically, the wafer schematic diagram of the single-chip-level luminescence data is corresponding to the wafer schematic diagram of the reference electroluminescence data, so as to obtain the coincidence rate as shown in fig. 6. This is essentially a one-to-one correspondence of the emission data of each light emitting chip in the wafer. Therefore, the error between the currently obtained single-chip-level luminous data and the reference electroluminescent data can be intuitively seen, whether the coincidence rate of the current wafer luminous data reaches the expected probability is judged, and if the coincidence rate of the current wafer luminous data does not reach the expected probability, the photoluminescent data is calibrated again, so that the single-chip-level luminous data is estimated again.
It should be noted that, the present embodiment provides a method for verifying whether the obtained single-chip-level luminescence data accords with an electroluminescence detection standard, by corresponding the single-chip-level luminescence data of each luminescence chip on a wafer to a reference electroluminescence data, so as to obtain the coincidence rate of the single-chip-level luminescence data and the reference electroluminescence data, further ensure the accuracy of the single-chip-level luminescence data, thereby obtaining the single-chip-level luminescence data efficiently and accurately through a photoluminescence technology, and effectively preventing the luminescence technology from possibly damaging the luminescence chip in the detection process.
In an embodiment, after step S51, that is, after obtaining the coincidence ratio of the single-chip level light emitting data and the reference electroluminescent data, the detection method further includes the following steps:
s61: taking the difference value of the reference electroluminescent data and the single-chip level luminescent data as a Y axis and taking the single-chip level luminescent data as an X axis to obtain the distribution condition of the difference value of the single-chip level luminescent data and the reference electroluminescent data.
Specifically, as shown in fig. 7, the distribution situation obtained in this embodiment is shown, through which the difference between the finally obtained single-chip level light-emitting data and the reference electroluminescent data can be intuitively obtained, and in other possible designs, the light-emitting data can be recalibrated according to the difference, so as to re-estimate the accurate single-chip level light-emitting data.
It should be noted that, the present embodiment also provides a method for verifying whether the obtained single-chip-level light-emitting data accords with the electroluminescence detection standard, and compared with step S52, the present embodiment obtains a distribution condition, and can accurately evaluate whether the current obtained single-chip-level light-emitting data is accurate according to the gap between the single-chip-level light-emitting data and the reference electroluminescence data, and can obtain the accurate single-chip-level light-emitting data through repeated verification as the detection result of the detection method, thereby efficiently and accurately obtaining the single-chip-level light-emitting data through the photoluminescence technology, and effectively preventing the electroluminescence technology from possibly damaging the light-emitting chip in the detection process.
The existing detection of light emitting chips in a wafer is mainly performed by using a contact type Electroluminescence (EL) technology, and meanwhile, the detection standard recognized in the art is standard on the single chip level of electroluminescence. However, there are two significant problems associated with electroluminescent technology: firstly, the electrode probe needs to be in direct contact with the light-emitting chip, and when the detection voltage is too high, the light-emitting chip can be damaged by the electrode; secondly, because the electroluminescence technology is to detect each light emitting chip on the wafer one by one in sequence, and because the particles of Mini/Micro LEDs are smaller than those of the traditional LEDs, the density of the light emitting chips embedded in the wafer with the same size is higher and the number is more than that of the traditional LEDs, the detection speed of the Mini/Micro LEDs is very slow through electroluminescence, and the detection efficiency is seriously influenced.
In view of the above two problems, the present invention essentially proposes that a contact detection accuracy result is obtained by a non-contact detection method, that is, a Photoluminescence (PL) technology is used to detect a light emitting chip in a wafer, so as to obtain single-chip-level light emitting data that can only be detected by the EL technology. However, since photoluminescence data detected by the photoluminescence technology (PL) is of the order of field of view (FOV), that is, the accuracy is not enough to reach the single chip level, the present invention performs one-to-one correspondence between the photoluminescence data and the electroluminescence data by the above-mentioned method for detecting a light emitting chip in a wafer. Therefore, the invention combines the precision characteristic of the electroluminescence single chip level by utilizing the detection characteristic that photoluminescence does not need to contact with the luminescence chip, thus the invention combines the respective advantage characteristics of photoluminescence and electroluminescence, not only obtains the accurate detection result of the luminescence chip of the single chip level under the condition of no contact, but also provides a method for one-to-one correspondence between photoluminescence data and electroluminescence data, so that the noncontact detection technology gradually replaces the contact technology, thereby effectively preventing the chip damage caused in the detection process, and simultaneously, the detection method effectively improves the detection efficiency of wafers based on small particle luminescence chips because the Photoluminescence (PL) technology does not need to detect the luminescence chips one by one.
It should be understood that the sequence number of each step in the foregoing embodiment does not mean that the execution sequence of each process should be determined by the function and the internal logic, and should not limit the implementation process of the embodiment of the present invention.
In an embodiment, a device for detecting light emitting chips in a wafer is provided, where the device for detecting light emitting chips in a wafer corresponds to the method for detecting light emitting chips in a wafer in the above embodiment one by one. As shown in fig. 8, the device for detecting the light emitting chips in the wafer includes a detection module 10, a preprocessing module 20, a calibration module 30, and a presumption module 40. The functional modules are described in detail as follows:
the detection module 10 is used for detecting a wafer through photoluminescence to obtain photoluminescence data of a luminous chip in the wafer;
a preprocessing module 20, configured to preprocess the reference electroluminescent data to obtain light-emitting data of the angle of view level;
the calibration module 30 is configured to calibrate the photoluminescence data and the light emission data of the field angle level to obtain calibrated light emission data;
the estimation module 40 is configured to spatially estimate the calibrated light emission data to obtain single-chip-level light emission data.
For specific limitation of the detection device for the light emitting chips in the wafer, reference may be made to the above limitation of the detection method for the light emitting chips in the wafer, and the description thereof will not be repeated here. The above-mentioned each module in the detection device of the light emitting chip in the wafer may be implemented in whole or in part by software, hardware, and a combination thereof. The above modules may be embedded in hardware or may be independent of a processor in the computer device, or may be stored in software in a memory in the computer device, so that the processor may call and execute operations corresponding to the above modules.
In one embodiment, a computer device is provided, which may be a server, and the internal structure of which may be as shown in fig. 9. The computer device includes a processor, a memory, a network interface, and a database connected by a system bus. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, computer programs, and a database. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The database of the computer device is used for storing all data generated in the process of realizing the detection method of the light emitting chips in the wafer. The network interface of the computer device is used for communicating with an external terminal through a network connection. The computer program is executed by a processor to implement a method for detecting light emitting chips in a wafer.
In one embodiment, a computer device is provided comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, the processor implementing the steps of when executing the computer program:
obtaining photoluminescence data of a luminous chip in a wafer through photoluminescence detection of the wafer;
preprocessing the reference electroluminescent data to obtain the luminous data of the view angle level;
calibrating the photoluminescence data and the luminous data of the view angle level to obtain calibrated luminous data;
and carrying out space estimation on the calibrated luminous data to obtain single-chip-level luminous data.
In one embodiment, a computer readable storage medium is provided having a computer program stored thereon, which when executed by a processor, performs the steps of:
obtaining photoluminescence data of a luminous chip in a wafer through photoluminescence detection of the wafer;
preprocessing the reference electroluminescent data to obtain the luminous data of the view angle level;
calibrating the photoluminescence data and the luminous data of the view angle level to obtain calibrated luminous data;
And carrying out space estimation on the calibrated luminous data to obtain single-chip-level luminous data.
Those skilled in the art will appreciate that implementing all or part of the above described methods may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed, may comprise the steps of the embodiments of the methods described above. Any reference to memory, storage, database, or other medium used in the various embodiments provided herein may include non-volatile and/or volatile memory. The nonvolatile memory can include Read Only Memory (ROM), programmable ROM (PROM), electrically Programmable ROM (EPROM), electrically Erasable Programmable ROM (EEPROM), or flash memory. Volatile memory can include Random Access Memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in a variety of forms such as Static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double Data Rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous Link DRAM (SLDRAM), memory bus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM), among others.
It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-described division of the functional units and modules is illustrated, and in practical application, the above-described functional distribution may be performed by different functional units and modules according to needs, i.e. the internal structure of the apparatus is divided into different functional units or modules to perform all or part of the above-described functions.
The above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention, and are intended to be included in the scope of the present invention.
Claims (10)
1. The method for detecting the light-emitting chips in the wafer is characterized by comprising the following steps of:
obtaining photoluminescence data of a luminous chip in a wafer through photoluminescence detection of the wafer;
Preprocessing the reference electroluminescent data to obtain the luminous data of the view angle level;
calibrating the photoluminescence data and the luminous data of the view angle level to obtain calibrated luminous data;
and carrying out space estimation on the calibrated luminous data to obtain single-chip-level luminous data.
2. The method of claim 1, wherein the detecting the luminescence chip by photoluminescence to obtain photoluminescence data of the luminescence chip comprises:
obtaining original photoluminescence spectrum data through the photoluminescence detection luminescence chip;
performing signal smoothing processing on the photoluminescence spectrum data to obtain smoothed spectrum data;
calculating the wavelength of the smoothed spectrum data to obtain photoluminescence wavelength;
and taking the photoluminescence wavelength as photoluminescence data of the light emitting chip.
3. A method of detecting as claimed in claim 2 wherein said smoothing of said photoluminescence spectral data to obtain smoothed spectral data comprises:
removing the interference of the miscellaneous peaks in the photoluminescence spectrum data to obtain spectrum peak value data;
And carrying out signal smoothing processing on the spectrum peak value data to obtain the smooth spectrum data.
4. The method of claim 1, wherein preprocessing the reference electroluminescent data to obtain the light emission data at the angle of view level comprises:
calculating a median in the reference electroluminescent data;
screening out the reference electroluminescent data in the adjacent area of the median as effective luminescent data;
and downsampling the effective luminous data to obtain luminous data of the view angle level.
5. The detection method according to claim 1 or 4, wherein the reference electroluminescence data is obtained by:
determining an epitaxial structure of the wafer;
in the epitaxial structure, electroluminescent data of any one of the light-emitting chips are obtained;
and taking the electroluminescence data as reference electroluminescence data of all wafers in the epitaxial structure.
6. The method of detecting as claimed in claim 1, wherein said estimating the calibrated emission data to obtain emission data at a single chip level comprises:
the associated data which are consistent with the data distribution condition of the calibrated luminous data are estimated;
Adding the data quantity of the calibrated luminous data with the data quantity of the associated data to obtain an estimated total number;
and if the estimated total number is consistent with the data quantity of the reference electroluminescent data, combining the calibrated luminescent data with the associated data and the luminescent data of the single chip level.
7. The method according to claim 6, wherein the estimating the associated data corresponding to the data distribution of the calibrated emission data includes:
based on the data distribution condition of the calibrated luminous data, all the view angle areas in the wafer are marked;
selecting adjacent areas in all the view angle areas, and taking the light-emitting chips between any pair of light-emitting chips in the adjacent areas as chips to be predicted;
according to the luminous data of each view angle area, the luminous data of the chip to be predicted is estimated;
and taking the luminous data of the chip to be predicted as the associated data of the calibrated luminous data.
8. A device for detecting light emitting chips in a wafer, comprising:
the detection module is used for detecting the wafer through photoluminescence and obtaining photoluminescence data of the luminous chips in the wafer;
The preprocessing module is used for preprocessing the reference electroluminescent data to obtain the luminous data of the view angle level;
the calibration module is used for calibrating the photoluminescence data and the luminous data of the view angle level to obtain calibrated luminous data;
and the presumption module is used for carrying out space presumption on the calibrated luminous data to obtain single-chip-level luminous data.
9. Computer device comprising a memory, a processor and a computer program stored in the memory and executable on the processor, characterized in that the processor, when executing the computer program, carries out the steps of the method for detecting light emitting chips in a wafer according to any one of claims 1 to 7.
10. A computer readable storage medium storing a computer program, characterized in that the computer program when executed by a processor realizes the steps of the method for detecting light emitting chips in a wafer according to any one of claims 1 to 7.
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