CN117681080A

CN117681080A - Wafer edge polishing method

Info

Publication number: CN117681080A
Application number: CN202311840462.XA
Authority: CN
Inventors: 张冲波; 郑金龙; 黄艺毅; 周铁军; 马金峰
Original assignee: Guangdong Vital Micro Electronics Technology Co Ltd
Current assignee: Guangdong Vital Micro Electronics Technology Co Ltd
Priority date: 2023-12-28
Filing date: 2023-12-28
Publication date: 2024-03-12

Abstract

The invention discloses a wafer edge polishing method, which comprises the following steps: the edge polishing equipment is in place and is provided with a pair of edge polishing balls which are oppositely arranged along the vertical direction; controlling the two edge throwing balls to rotate at a first preset rotating speed in situ, and enabling the cambered surfaces of the two edge throwing balls to contact with each other so as to form opposite pressing and generate deformation; sucking the wafer and enabling the wafer to rotate at a second preset rotating speed; and moving the wafer to a polishing station so that the polishing ball covers the edge of the wafer and polishes the edge of the wafer. According to the invention, the cambered surfaces of the two edge polishing balls are contacted with each other to form opposite pressing and generate deformation, and when a wafer contacts the edge polishing balls, the edge polishing balls can completely cover the edge of the wafer to finish edge polishing treatment on the edge of the wafer, so that the problem of high technical requirements of manual edge polishing on operators is solved; meanwhile, through the automatic operation, the edge polishing efficiency is improved, and the problem that the manual edge polishing of staff is easy to be injured is avoided.

Description

Wafer edge polishing method

Technical Field

The invention relates to the technical field of semiconductor substrate manufacturing, in particular to a wafer edge polishing method.

Background

Indium phosphide substrates have application markets in a number of fields including the fields of high frequency high power devices, radio frequency devices such as fiber optic communications, wireless transmission, radio astronomy, and the like. The radio frequency device manufactured by the indium phosphide substrate has excellent performance in application scenes such as satellites, radars and the like, particularly has strong competitiveness in the aspects of radio frequency front ends of radars and communication systems and analog/mixed signal wide bandwidth circuits, and is suitable for high-speed data processing, high-precision wide bandwidth A/D conversion and the like.

Indium phosphide-based radio frequency devices such as low noise amplifiers, modules, receivers, and the like are widely used in satellite communications, millimeter wave radar, active and passive millimeter wave imaging, and the like. At bandwidth levels above 100GHz, indium phosphide-based radio frequency devices have shown significant advantages in wireless transmission over backhaul networks and point-to-point communication networks. Indium phosphide substrates are expected to become the dominant substrate material for radio frequency devices in future wireless transmission networks for 6G to 7G communications.

However, the indium phosphide edge polishing process is a time-consuming and labor-consuming process at present. The existing indium phosphide edge polishing method mainly relies on manual operation, and staff needs to check wafer information first, then hold abrasive paper in one hand, hold a wafer in the other hand, and wipe edges along the edge of the wafer by the abrasive paper. This process is inefficient and requires high technical demands on the operator.

Disclosure of Invention

The invention aims to solve the technical problems that: the existing wafer edge polishing is operated manually, the efficiency is low, and the technical requirements on operators are high.

In order to solve the technical problems, the invention provides a wafer edge polishing method, which comprises the following steps:

the edge polishing equipment is in place and is provided with a pair of edge polishing balls which are oppositely arranged along the vertical direction;

controlling the two edge throwing balls to rotate at a first preset rotating speed in situ, and enabling the cambered surfaces of the two edge throwing balls to contact with each other so as to form opposite pressing and generate deformation;

sucking the wafer and enabling the wafer to rotate at a second preset rotating speed;

and moving the wafer to a polishing station so that the polishing ball covers the edge of the wafer and polishes the edge of the wafer.

In some embodiments, the butt pressure of the two polished edge balls is 400-600N.

In some embodiments, the first preset rotational speed is 15-25 revolutions per minute.

In some embodiments, the sucking the wafer includes: and adopting a vacuum adsorption mode to carry out wafer, wherein the vacuum adsorption force of the vacuum adsorption is-25 to-65 Kpa.

In some embodiments, the second preset rotational speed is 30-50 revolutions/min.

In some embodiments, the direction of rotation of both of the polished edge balls is the same.

In some embodiments, the edge of the wafer is continuously rinsed to rinse away debris from polishing.

In some embodiments, the continuously rinsing the edge of the wafer comprises: the water flow rate of the flushing water flow is 800-1200m l/min.

In some embodiments, after edge polishing is completed, the wafer after edge polishing is cleaned.

In some embodiments, the sucking the wafer includes:

the manipulator is in place and is provided with an adsorption head;

acquiring the position coordinates of the wafer;

and adjusting the pose of the manipulator according to the position coordinates, and sucking the wafer.

Compared with the prior art, the wafer edge polishing method has the beneficial effects that:

the edge polishing device is in place and is provided with a pair of edge polishing balls which are oppositely arranged along the height direction of the edge polishing device; controlling the two edge throwing balls to rotate at a first preset rotating speed in situ, and enabling the cambered surfaces of the two edge throwing balls to contact with each other so as to form opposite pressing and generate deformation; sucking the wafer and enabling the wafer to rotate at a second preset rotating speed; and moving the wafer to a polishing station so that the polishing ball covers the edge of the wafer and polishes the edge of the wafer. Because the edge of the wafer is an arc surface rather than a vertical surface, compared with the conventional manual edge polishing mode which only can polish the plane of the edge and cannot polish the curved surface, the invention ensures that the cambered surfaces of two edge polishing balls are mutually contacted to form opposite pressure and generate deformation, and when the wafer contacts the edge polishing balls, the edge polishing balls can completely cover the edge of the wafer so as to finish edge polishing treatment on the edge of the wafer, thereby solving the problem of higher technical requirements of operators due to manual edge polishing; meanwhile, through the automatic operation, the edge polishing efficiency is improved, and the problem that the manual edge polishing of staff is easy to be injured is avoided.

Drawings

FIG. 1 is a schematic flow chart of a wafer edge polishing method according to an embodiment of the present invention;

fig. 2 is a schematic view of a first angle structure of edge polishing equipment according to an embodiment of the present invention;

fig. 3 is a schematic view of a second angle structure of edge polishing equipment according to an embodiment of the present invention;

FIG. 4 is a top view of edge polishing equipment provided by an embodiment of the present invention;

FIG. 5 is an enlarged partial view of portion A of FIG. 3, as provided by an embodiment of the present invention;

FIG. 6 is an enlarged partial view of portion B of FIG. 4, as provided by an embodiment of the present invention;

in the figure, 1, edge ball throwing; 11. a turntable; 12. a polishing pad; 2. a manipulator; 21. an adsorption head; 22. a mechanical arm; 221. a second mounting bar; 222. a first bracket; 23. a communication rod; 3. a base; 31. a mounting groove; 32. a waste tank; 4. a first mounting frame; 5. a rotation shaft; 6. a spray head.

Detailed Description

The following describes in further detail the embodiments of the present invention with reference to the drawings and examples. The following examples are illustrative of the invention and are not intended to limit the scope of the invention.

As shown in fig. 1 and 2, an embodiment of the present invention provides a wafer edge polishing method applied to edge polishing processing of a wafer in a process before rough polishing after polishing, the wafer edge polishing method includes the following steps:

s110, positioning edge polishing equipment, wherein the edge polishing equipment is provided with a pair of edge polishing balls 1 which are oppositely arranged along the vertical direction;

this step is a preparation stage, in which the edge polishing device is placed in a suitable position. The edge polishing balls 1 on the equipment are used as key components for polishing the edges of the wafers, and the two edge polishing balls 1 are oppositely arranged along the vertical direction, so that the edges of the wafers can be effectively treated from two directions in the polishing process.

S120, controlling the two edge throwing balls 1 to rotate at a first preset rotating speed in situ, and enabling the cambered surfaces of the two edge throwing balls 1 to contact with each other so as to form opposite pressure and generate deformation;

the first preset rotating speed of the edge polishing ball 1 is set through the control system, so that the edge polishing ball 1 starts to rotate, when the cambered surfaces of the two edge polishing balls 1 are in contact with each other, the two edge polishing balls can be mutually extruded, and due to the effect of pressure, the edge polishing ball 1 can generate tiny deformation, the contact area and friction force with the edge of a wafer are increased, and the polishing efficiency and effect are improved.

S130, sucking the wafer and enabling the wafer to rotate at a second preset rotating speed;

in this step, the control system will use a special suction device to safely pick up the wafer to be edge polished. And then the wafer rotates at a second preset rotational speed. It should be noted that, the second preset rotation speed is matched with the first preset rotation speed of the edge polishing ball 1, so that the edge of the wafer can be ensured to be uniformly contacted with the edge polishing ball 1, and a comprehensive and uniform polishing effect is realized.

And S140, moving the wafer to a polishing station so that the polishing ball 1 covers the edge of the wafer and polishes the edge of the wafer.

In this step, the control system will accurately move the wafer to the edge polishing station, ensuring that the edge polishing ball 1 completely covers the edge portion of the wafer. With the continuous rotation and extrusion of the edge polishing balls 1, the edge polishing balls can perform edge polishing treatment on the edge of the wafer, remove flaws and unevenness of the edge and improve the quality and performance of the wafer.

Because the wafer edge is an arc-shaped surface rather than a vertical surface, compared with the conventional manual edge polishing mode, only the plane of the edge can be polished, and the curved surface cannot be polished. Based on the above steps, in the embodiment, the cambered surfaces of the two edge polishing balls 1 are contacted with each other to form opposite pressure and deform, when the wafer contacts the edge polishing balls 1, the edge polishing balls 1 can completely cover the edge of the wafer to finish edge polishing treatment on the edge of the wafer, and the problem that the technical requirement of manual edge polishing on operators is high is solved; meanwhile, through the automatic operation, the edge polishing efficiency is improved, and the problem that the manual edge polishing of staff is easy to be injured is avoided.

In some embodiments, the butt pressure of the two polished edge balls 1 is 400-600N.

When two edge-throwing balls 1 are in contact with each other at this pressure, they undergo a degree of deformation which contributes to an increase in the edge-throwing area and an improvement in the edge-throwing efficiency. As can be appreciated, the deformed edge polishing ball 1 can better adapt to and fit the edge shape of the wafer, so that when the wafer contacts the edge polishing ball 1 to polish, the edge polishing ball 1 can better wrap and cover the edge of the wafer, so as to ensure that the whole wafer edge can be uniformly and sufficiently polished, and the polishing quality and consistency are improved. In addition, the opposite pressure in the range can ensure that flaws and unevenness at the edge of the wafer can be effectively removed in the polishing process, and excessive abrasion or damage to the wafer is avoided, so that better polishing quality and efficiency are achieved.

It can be understood that in the process of rotating edge polishing, the edge polishing ball 1 rotates at a speed of 15-25 revolutions per minute, so that the contact time and force between the edge polishing ball 1 and the edge of the wafer can be ensured to be relatively uniform, the polishing non-uniformity caused by the too high rotating speed or the polishing inefficiency caused by the too slow rotating speed can be reduced, and the stability and consistency of the polishing process can be maintained, thereby realizing uniform polishing of the edge of the wafer, avoiding the situation of local overpolishing or insufficient polishing, and ensuring the overall quality and appearance of the edge of the wafer.

In some embodiments, the sucking the wafer includes: the wafer is sucked in a vacuum way, and negative pressure is generated through the vacuum suction head of the suction device in the process of sucking the wafer, so that the wafer is tightly sucked on the suction head, and the nondestructive clamping and carrying of the wafer are realized. The vacuum adsorption force of the vacuum adsorption is-25 to-65 Kpa so as to ensure enough adsorption force to stably clamp the wafer, prevent the wafer from falling off due to insufficient adsorption force in the process of carrying or processing, and avoid damage to the wafer caused by overlarge adsorption force. In addition, the vacuum pressure of the vacuum suction head is stable, and the position change or slippage of the wafer caused by the vacuum pressure fluctuation during the adsorption, the transportation or the processing process is prevented.

In some embodiments, the second preset rotational speed is 30-50 revolutions per minute.

As can be appreciated, the edge of the wafer approaches the edge polishing ball 1 at the rotation speed of 30-50 rpm, and is matched with the first preset rotation speed to uniformly generate contact friction with the edge polishing ball 1, and the larger rotation speed can lead to uneven polishing of the wafer, and the insufficient rotation speed can lead to poor polishing roughness and uniformity of the wafer; by utilizing the rotating speed, the contact time and force between the edge polishing ball 1 and the edge of the wafer can be ensured to be relatively uniform, the polishing non-uniformity caused by the too high rotating speed or the polishing inefficiency caused by the too low rotating speed can be reduced, and the stability and consistency of the polishing process are maintained, so that the edge of the wafer is uniformly polished, the situation of local over-polishing or insufficient polishing can be avoided by uniform polishing, and the overall quality and appearance of the edge of the wafer are ensured.

In some embodiments, the rotation directions of the two edge balls 1 are the same.

When the two edge polishing balls 1 rotate in the same direction, the wafer edge is polished in a consistent manner. The synchronous rotation can ensure the uniform polishing effect on the two sides of the wafer and avoid inconsistent polishing or collision caused by different rotation directions. Meanwhile, the edge polishing balls 1 with the same rotation direction can receive balanced polishing pressure and friction force at the edge of a wafer to form stable polishing action, so that the polishing efficiency is improved, the polishing quality and consistency are improved due to the fact that the two balls apply acting force to the edge of the wafer at the same time, the problem of local overpolishing or insufficient polishing caused by inconsistent directions is solved, flaws and unevenness can be removed more quickly, and the polishing time is shortened.

Since during wafer polishing, material on the wafer surface is removed by mechanical or chemical action, fine particles and debris are formed. If not cleaned in time, the particles and debris may re-adhere to the wafer surface, resulting in reduced surface quality, or contamination during subsequent process steps. In the practical application process, the edge of the wafer is continuously washed to wash out scraps generated by polishing, the polished particles, scraps and other substances are washed away in time, and the damage of the wafer to the abrasion of the edge polishing ball 1 is prevented.

In some embodiments, continuously rinsing the edge of the wafer includes: the flow rate of the rinse water is 800-1200ml/min to provide sufficient flow rate to ensure sufficient power to flush away the debris and particles generated during polishing from the wafer edge, preventing them from reattaching to the wafer surface or causing further wear to the wafer. It will be appreciated that excessive water flow may impact the wafer, possibly causing damage or deformation to the wafer surface. The water flow rate set at 800-1200m l/min can ensure the cleaning effect and avoid unnecessary physical damage to the wafer.

In some embodiments, after the edge polishing is completed, the polished wafer is cleaned to remove particles, debris and other impurities that may adhere to the wafer surface during the edge polishing process, and these impurities, if not removed, may affect the subsequent rough polishing process. In addition, the remaining particles or debris can be prevented from causing further physical damage to the wafer.

It should be noted that the wafer may also be cleaned before edge polishing to remove particles, debris, other impurities or chemical residues that may adhere to the wafer surface during the polishing process.

In some embodiments, the sucking the wafer includes:

the manipulator 2 is in place, and the manipulator 2 is provided with an adsorption head 21; in which the robot arm 2, i.e. the suction device described above, is moved to a position suitable for sucking the wafer. The robot 2 is equipped with a suction head 21 (i.e., vacuum head as described above) that uses vacuum suction or other means to ensure that the wafer is not damaged during pick and place.

Acquiring the position coordinates of a wafer;

in this step, the specific position of the wafer to be suctioned needs to be determined by some kind of positioning system (such as a vision system, a sensor, or a preset program).

And adjusting the pose of the manipulator 2 according to the position coordinates, and sucking the wafer.

The robot 2 adjusts its own position and posture (e.g., rotates or lifts) according to the position coordinates to ensure that the suction head 21 can accurately align and suction the wafer, and then the robot 2 performs a suction operation to pick up the wafer from its current position using the suction head 21.

The process has the main effects of realizing automatic carrying of the wafer, sucking the wafer by the manipulator 2 for edge polishing, improving the working efficiency, reducing the manual error, ensuring the precision and stability of the production process and reducing the production cost to a certain extent.

As shown in fig. 2 and 5, the edge polishing device used in the method further includes a base 3, a first mounting frame 4 mounted on the base 3, and two edge polishing balls 1, where the two edge polishing balls 1 are relatively disposed at a first end of the first mounting frame 4, and the edge polishing balls 1 can rotate in situ relative to the first mounting frame 4, each edge polishing ball 1 is correspondingly provided with a rotating shaft 5 and a first driving member, an output shaft of the first driving member is connected with the rotating shaft 5, and one end of the rotating shaft 5 away from the first driving member is connected with the edge polishing ball 1 to drive the edge polishing ball 1 to rotate in situ.

It can be understood that the edge polishing ball 1 in this embodiment is composed of a turntable 11 and a polishing pad 12, an air inflation cavity is formed between the turntable 11 and the polishing pad 12, the air inflation cavity is inflated by utilizing an air inflation structure, and the curvature change of the cambered surface of the polishing pad 12 is realized at best by controlling, so that when two edge polishing balls 1 are contacted to form pressing due to the change of the cambered surface caused by inflation, the two edge polishing balls deform, thereby meeting the requirements of different edge polishing methods. That is, in step S120, the cambered surfaces of the two edge balls 1 are brought into contact with each other to form a butt-press and deform, and the contact manner is that the above-mentioned inflation generates two butt-presses realized by different volumes of the edge balls 1. In addition, in the embodiment, the first driving piece controls the two edge throwing balls 1 to rotate in situ at 360 degrees at a first preset rotating speed.

As shown in fig. 4 and 6, the edge polishing apparatus further includes a robot arm 2 mentioned in the above method, the robot arm 2 has a robot arm 22 for adjusting the pose, an adsorption head 21 for adsorbing the wafer, a communication rod 23, a vacuum pump, and a second driving member, the robot arm 22 is mounted on the base 3, the communication rod 23 is connected with the end of the robot arm 22, the adsorption head 21 is disposed on the communication rod 23, and the second driving member is connected with the adsorption head 21 to drive the adsorption head 21 to rotate, and the vacuum pump is communicated with the adsorption head 21 to adsorb the wafer. It can be understood that in the present embodiment, the vacuum suction force of the suction head 21 is controlled by the vacuum pump to stably suck the wafer, and the suction head 21 is driven to rotate by the second driving member, so as to drive the wafer to rotate at the second preset rotation speed.

Referring to fig. 3 together, the mechanical arm 22 includes a second mounting rod 221, a third driving member, a guide rail, a slider, a first bracket 222 and a fourth driving member, the base 3 is provided with a mounting groove 31 for mounting the second mounting rod 221, wherein the groove wall of the mounting groove 31 is provided with the guide rail, the slider is slidably mounted on the guide rail, the third driving member is connected with the slider so as to slide on the guide rail by driving the slider, and further drive the second mounting rod 221 to extend or retract into the mounting groove 31, the first bracket 222 is connected with one end of the second mounting rod 221 away from the mounting groove 31 so as to drive the first bracket 222 to lift by lifting of the second mounting rod 221, thereby realizing position adjustment of the wafer in the vertical direction, and enabling the wafer to accurately fall into the edge polishing station in the vertical direction; the first support 222 is connected with the fourth driving piece to drive the first support 222 to rotate, realize the position adjustment on the wafer horizontal direction, with the position adjustment cooperation on the vertical direction, make the wafer accurately fall into the throwing limit station, the absorption head 21 is installed in the one end of first support 222 far away from second installation pole 221 for snatch or adsorb the instrument of object, along with the rotation of first support 222 and the lift of second installation pole 221, absorption head 21 can reach different positions and angles, thereby accomplish corresponding operation task. That is, the above-mentioned method is realized based on the above-mentioned structure, and the corresponding pose is adjusted to suck the wafer according to the coordinate position of the wafer.

As shown in fig. 5, the edge polishing apparatus further includes a nozzle 6, the nozzle 6 is mounted on the first mounting frame 4, and the nozzle of the nozzle 6 faces the center of the line connecting the axes of the two edge polishing balls 1, so as to spray water flow to take away the chips generated by edge polishing, and the water flow force is utilized to wash away or rinse away the chips, so that the apparatus is kept clean and normal, and damage to the edge polishing pad caused by the abrasion of the chips of the wafer is prevented.

In addition, the base 3 has a waste bin 32 (shown in fig. 2) for collecting and containing waste or waste generated during operation of the apparatus. The presence of the chute 32 helps to keep the working area clean, while also allowing for easy management and disposal of the waste, the chute 32 being located below the edge ball 1 for easy collection of the waste. When the edge blast operation is performed, any generated debris, waste material or other waste falls downwardly with the water flow and the underlying chute 32 effectively receives and holds the waste material from other parts of the apparatus or from the working environment. Such a design helps to improve work efficiency, maintain equipment cleanliness, and ensure safety of the work environment.

The working principle of the invention is as follows: the manipulator 2 can absorb wafers with different sizes and different thicknesses, the manipulator 2 clamps the wafers to prop against the edge of the edge polishing ball 1, and the adsorption head 21 of the manipulator 2 can automatically absorb the wafers, so that the function of automatically picking and placing the wafers is realized. The suction head 21 sucks the wafer, and the vacuum suction force is-25 to-65 Kpa, so that the wafer is held without falling off. The adsorption head 21 can automatically rotate (independently rotate) under the drive of the second driving piece, and the edge of the wafer can uniformly generate contact friction with the edge polishing ball 1 by rotating the adsorption head 21, wherein the wafer is close to the edge polishing ball 1 at the rotating speed of 30-50 revolutions per minute, and the edge polishing ball 1 can rotate for polishing the edge at the rotating speed of 15-25 revolutions per minute by 360 degrees, so that the edge polishing ball 1 uniformly polishes the edge of the wafer, uneven edge polishing is avoided, and the edge of the whole wafer can be uniformly and stably polished by the edge polishing ball 1 along with the simultaneous rotation of the two, so that the edge polishing purpose of the edge of the wafer is achieved. The opposite pressure of the edge throwing ball 1 is 400-600N, so that the edge throwing ball 1 is ensured to have certain deformation. Since the wafer edge is arcuate rather than vertical. Conventional manual edge polishing methods can only polish the plane of the edge, but cannot polish the curved surface. By applying certain opposite pressure to the edge polishing ball 1, when the wafer contacts the edge polishing ball 1, the edge polishing ball 1 can completely cover the edge of the wafer, so that the precision and edge polishing effect of the edge polishing process are ensured. The spray head 6 sprays water flow at the flow rate of 800-1200ml/min, enough water flow is needed to continuously wash the edge of the wafer in the polishing process, the polished particles and other substances are washed away in time, and the damage of the wafer to the abrasion of the edge polishing ball 1 is placed. After the edge polishing operation is completed, the first bracket 222 rotates 180 degrees to bring the wafer away from the edge polishing station, and the wafer can be pulled up and down through the second mounting rod 221 to be placed back at the wafer taking position.

In summary, compared with the conventional manual edge polishing mode, which only can polish the plane of the edge but cannot polish the curved surface, the edge polishing method provided by the embodiment of the invention has the advantages that the cambered surfaces of the two edge polishing balls 1 are mutually contacted to form opposite pressure and generate deformation, and when the wafer contacts the edge polishing balls 1, the edge polishing balls 1 can completely cover the edge of the wafer to finish edge polishing treatment of the edge of the wafer, so that the problem of higher technical requirements of operators due to manual edge polishing is solved; meanwhile, through the automatic operation, the edge polishing efficiency is improved, and the problem that the manual edge polishing of staff is easy to be injured is avoided.

The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and substitutions can be made by those skilled in the art without departing from the technical principles of the present invention, and these modifications and substitutions should also be considered as being within the scope of the present invention.

Claims

1. A wafer edge polishing method, comprising the steps of:

2. The wafer edge polishing method as set forth in claim 1, wherein the pressing force of the two edge polishing balls is 400 to 600N.

3. The wafer edge polishing method as set forth in claim 1, wherein the first preset rotational speed is 15-25 rpm.

4. The wafer edge polishing method as set forth in claim 1, wherein the sucking up the wafer includes: and adopting a vacuum adsorption mode to carry out wafer, wherein the vacuum adsorption force of the vacuum adsorption is-25 to-65 Kpa.

5. The wafer edge polishing method as set forth in claim 1, wherein the second preset rotational speed is 30-50 rpm.

6. The wafer edge polishing method as set forth in claim 1, wherein the rotation directions of the two edge polishing balls are the same.

7. The wafer edge polishing method of claim 1 wherein the edge of the wafer is continuously rinsed to rinse debris from polishing.

8. The wafer edge polishing method of claim 7, wherein the continuously rinsing the edge of the wafer comprises: the water flow rate of the flushing water flow is 800-1200ml/min.

9. The wafer edge polishing method according to claim 1, wherein after edge polishing is completed, the wafer after edge polishing is cleaned.

10. The wafer edge polishing method as set forth in claim 1, wherein the sucking up the wafer includes:

the manipulator is in place and is provided with an adsorption head;

acquiring the position coordinates of the wafer;