CN117678050A - 具有高效离子收集的离子生产系统 - Google Patents

具有高效离子收集的离子生产系统 Download PDF

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Publication number
CN117678050A
CN117678050A CN202280034752.2A CN202280034752A CN117678050A CN 117678050 A CN117678050 A CN 117678050A CN 202280034752 A CN202280034752 A CN 202280034752A CN 117678050 A CN117678050 A CN 117678050A
Authority
CN
China
Prior art keywords
target
ions
ion beam
voltage
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280034752.2A
Other languages
English (en)
Chinese (zh)
Inventor
J·谢尔曼
S·切雷克吉安
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sunshine Technology Co ltd
Original Assignee
Sunshine Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunshine Technology Co ltd filed Critical Sunshine Technology Co ltd
Publication of CN117678050A publication Critical patent/CN117678050A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D59/00—Separation of different isotopes of the same chemical element
    • B01D59/44—Separation by mass spectrography
    • B01D59/48—Separation by mass spectrography using electrostatic and magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0475—Changing particle velocity decelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/055—Arrangements for energy or mass analysis magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06375—Arrangement of electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3142—Ion plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Geology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • External Artificial Organs (AREA)
  • Treatment Of Water By Ion Exchange (AREA)
CN202280034752.2A 2021-05-14 2022-05-13 具有高效离子收集的离子生产系统 Pending CN117678050A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163188729P 2021-05-14 2021-05-14
US63/188,729 2021-05-14
PCT/US2022/029153 WO2022241196A1 (en) 2021-05-14 2022-05-13 Ion production system with efficient ion collection

Publications (1)

Publication Number Publication Date
CN117678050A true CN117678050A (zh) 2024-03-08

Family

ID=83998469

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280034752.2A Pending CN117678050A (zh) 2021-05-14 2022-05-13 具有高效离子收集的离子生产系统

Country Status (10)

Country Link
US (1) US12391568B2 (cg-RX-API-DMAC7.html)
EP (1) EP4338194A4 (cg-RX-API-DMAC7.html)
JP (1) JP2024521061A (cg-RX-API-DMAC7.html)
KR (1) KR20240035391A (cg-RX-API-DMAC7.html)
CN (1) CN117678050A (cg-RX-API-DMAC7.html)
AU (1) AU2022273773A1 (cg-RX-API-DMAC7.html)
CA (1) CA3218431A1 (cg-RX-API-DMAC7.html)
IL (1) IL308413A (cg-RX-API-DMAC7.html)
MX (1) MX2023013468A (cg-RX-API-DMAC7.html)
WO (1) WO2022241196A1 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118019572A (zh) * 2021-10-01 2024-05-10 阳光技术有限责任公司 具有用于离子收集的纤维晶格的离子产生系统

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250054647A1 (en) * 2023-08-10 2025-02-13 Alpha Ring International, Ltd. Electron Suppressor Electrode for Improved Efficiency and In-Situ Electron Monitoring

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH077743B2 (ja) * 1992-07-09 1995-01-30 株式会社島津製作所 集束イオンビーム装置
JP3309435B2 (ja) * 1992-08-27 2002-07-29 石川島播磨重工業株式会社 イオンビームデポジション装置
JPH06103953A (ja) * 1992-09-18 1994-04-15 Elionix Kk 金属イオンを用いた薄膜形成方法およびその装置
US5354583A (en) * 1992-11-09 1994-10-11 Martin Marietta Energy Systems, Inc. Apparatus and method for selective area deposition of thin films on electrically biased substrates
RU2158170C1 (ru) * 1999-11-01 2000-10-27 Комбинат "Электрохимприбор" Способ разделения изотопов иттербия в электромагнитном сепараторе с использованием источника ионов
US6501078B1 (en) * 2000-03-16 2002-12-31 Applied Materials, Inc. Ion extraction assembly
JP2004139913A (ja) * 2002-10-21 2004-05-13 National Institute Of Advanced Industrial & Technology イオンビーム発生装置、イオンビーム発生方法、イオン処理装置およびイオン処理方法
US7138626B1 (en) * 2005-05-05 2006-11-21 Eai Corporation Method and device for non-contact sampling and detection
WO2007067296A2 (en) 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
JP5575198B2 (ja) * 2012-09-25 2014-08-20 株式会社東芝 磁気抵抗効果素子の製造方法及び磁気抵抗効果素子の製造装置
US9443708B2 (en) * 2014-09-10 2016-09-13 Battelle Memorial Institute Ion implantation system and process for ultrasensitive determination of target isotopes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118019572A (zh) * 2021-10-01 2024-05-10 阳光技术有限责任公司 具有用于离子收集的纤维晶格的离子产生系统
CN118019572B (zh) * 2021-10-01 2025-05-09 阳光技术有限责任公司 用于离子收集的方法

Also Published As

Publication number Publication date
EP4338194A4 (en) 2025-10-29
EP4338194A1 (en) 2024-03-20
KR20240035391A (ko) 2024-03-15
WO2022241196A1 (en) 2022-11-17
US12391568B2 (en) 2025-08-19
MX2023013468A (es) 2024-03-07
CA3218431A1 (en) 2022-11-17
AU2022273773A1 (en) 2023-11-23
IL308413A (en) 2024-01-01
US20220363558A1 (en) 2022-11-17
JP2024521061A (ja) 2024-05-28

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