CN117673899A - Semiconductor laser integrated device and scanning imaging method - Google Patents
Semiconductor laser integrated device and scanning imaging method Download PDFInfo
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- CN117673899A CN117673899A CN202211016244.XA CN202211016244A CN117673899A CN 117673899 A CN117673899 A CN 117673899A CN 202211016244 A CN202211016244 A CN 202211016244A CN 117673899 A CN117673899 A CN 117673899A
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Abstract
The embodiment of the application provides a semiconductor laser integrated device and a scanning imaging method, which are used for improving the density of laser integration in a unit area and improving the efficiency of laser scanning. The semiconductor laser integrated device in the embodiment of the application may include: a plurality of groups of chip arrays, a substrate and a micro lens array; wherein, a plurality of groups of chip arrays are fixed on the same surface of the substrate along the target straight line in a non-overlapping way; each group of chip arrays comprises a plurality of semiconductor laser chips distributed along a straight line, and the straight line of the chip distribution in each group of chip arrays is neither coincident with nor perpendicular to the target straight line; each semiconductor laser chip is powered by a power supply controlled by an independent switch; the micro lens array is arranged in the vertical direction of the emergent light of the semiconductor laser chips, and the light outlet of each semiconductor laser chip is respectively arranged on the optical axis of a corresponding focusing lens in the micro lens array, so that the emergent light of each semiconductor laser chip is focused.
Description
Technical Field
The present disclosure relates to the field of laser imaging technologies, and in particular, to a semiconductor laser integrated device and a scanning imaging method.
Background
The existing laser direct writing equipment (for example, application number is 201310084860.3, a laser direct plate making device for plane screen printing screen) adopts a structure that finished lasers are distributed along a vertical straight line, and a single finished laser comprises a laser diode, a protective shell and the like. The scan gap between adjacent lasers is equal to the spacing between adjacent finished lasers (in the vertical direction), about 6 millimeters (6000 microns), and the density of laser arrays per unit area is low. When the laser direct writing is performed on a high-precision image, taking an image with the resolution of 1270 as an example, the pixel row gap is 20 micrometers, 300 rows of pixels exist in a scanning gap of 6 millimeters, 300 times of scanning are needed to completely scan the pixel rows in the scanning gap, and the laser scanning efficiency is low.
Disclosure of Invention
The embodiment of the application provides a semiconductor laser integrated device and a scanning imaging method, which are used for improving the density of laser integration in a unit area and improving the efficiency of laser scanning.
A first aspect of the present embodiment provides a semiconductor laser integrated device, which may include:
a plurality of groups of chip arrays, a substrate and a micro lens array; wherein,
the multiple groups of chip arrays are fixed on the same surface of the substrate along the target straight line in a non-overlapping manner; each group of chip arrays comprises a plurality of semiconductor laser chips distributed along a straight line, and the straight line of the chip distribution in each group of chip arrays is neither coincident with nor perpendicular to the target straight line;
the substrate is provided with a plurality of paths of independent switch controlled power supplies, and each path of power supply is electrically connected with one semiconductor laser chip for supplying power;
the micro lens array is arranged in the vertical direction of the emergent light of the semiconductor laser chips, and the light outlet of each semiconductor laser chip is respectively arranged on the optical axis of a corresponding focusing lens in the micro lens array, so that the emergent light of each semiconductor laser chip is focused.
Alternatively, as a possible implementation manner, in the embodiment of the present application, the semiconductor laser chips in each group of chip arrays are distributed equidistantly.
Optionally, as a possible implementation manner, in this embodiment of the present application, the distances between adjacent projection points of the light outlets of the semiconductor laser chips to which the multiple groups of chip arrays belong on the target straight line are equal.
Alternatively, as a possible implementation manner, in this embodiment of the present application, the straight lines where the chips in each group of chip arrays are distributed are parallel to each other.
Optionally, as a possible implementation manner, in this embodiment of the present application, the output power of each power supply integrated on the substrate may be adjusted within a preset range.
Optionally, as a possible implementation manner, the semiconductor laser integrated device in the embodiment of the present application may further include: and the lens adjusting assembly is fixedly connected with the micro lens array and is used for adjusting the distance between the micro lens array and the substrate in the parallel direction of emergent light.
A second aspect of the embodiments of the present application provides a scanning imaging method, which is applied to the semiconductor laser integrated device as in the first aspect and any one of possible implementation manners of the first aspect, where the scanning imaging method may include:
performing image rasterization on a target image to be imaged to obtain position distribution data of exposure points to be exposed in all pixel rows, and associating each pixel row with one semiconductor laser chip in the semiconductor laser integrated device according to the interval between adjacent pixel rows;
controlling the semiconductor laser integrated device to perform scanning movement along the direction perpendicular to the direction of the target straight line; during the scanning movement, confirming the real-time position of the projection point of the laser of the semiconductor laser chip on the exposure surface, and controlling the corresponding semiconductor laser chip to expose the exposure point when the real-time position of the projection point is consistent with the position of the exposure point in the associated pixel row.
Optionally, as a possible implementation manner, in this embodiment of the present application, associating each pixel row with one semiconductor laser chip in the semiconductor laser integrated device according to a pitch between adjacent pixel rows may include:
recording distance values of projection points of light outlets of the semiconductor laser chips in the plurality of groups of chip arrays at the target straight line relative to a first projection point to form a first distance set;
a first semiconductor laser chip is associated with a first pixel row, and distance values of the subsequent pixel row at the intersection point of the target straight line and the first projection point are calculated in sequence to form a second distance set;
and matching the distance value with the smallest difference value in the first distance set for the target distance value in each second distance set, wherein the semiconductor laser chip corresponding to the successfully matched distance value is used as the semiconductor laser chip associated with the corresponding pixel row.
Optionally, as a possible implementation manner, the scanning imaging method in the embodiment of the present application may further include:
a power level is configured for the exposure points in the pixel row and the output power of the associated semiconductor laser chip is controlled to match the power level in accordance with the power level.
From the above technical solutions, the embodiments of the present application have the following advantages:
in the embodiment of the application, the plurality of semiconductor light-emitting device chips are directly integrated, so that the distance between the emergent lights of the semiconductor light-emitting device chips is reduced, and the density of the emergent lights in unit area is further improved. Meanwhile, the semiconductor laser chips are arranged into a plurality of sections of diagonal lines along the target straight line, when the device performs scanning movement along the direction perpendicular to the direction of the target straight line, the scanning interval of the emergent light of the adjacent semiconductor laser chips in the perpendicular direction of the target straight line can be smaller than the straight line distance of the adjacent semiconductor laser chips, so that the laser distribution density in the perpendicular direction of scanning is improved, and the laser scanning imaging efficiency is greatly improved.
Drawings
FIG. 1 is a schematic cross-sectional view of one possible configuration of a semiconductor laser integrated device according to an embodiment of the present application;
FIG. 2 is a schematic diagram showing the arrangement of semiconductor laser chip positions in a plurality of chip arrays in a semiconductor laser integrated device according to an embodiment of the present application;
fig. 3 is a schematic diagram of an embodiment of a scanning imaging method in an embodiment of the present application.
Detailed Description
In order to make the present application solution better understood by those skilled in the art, the following description will be made in detail and with reference to the accompanying drawings in the embodiments of the present application, it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, shall fall within the scope of the present application.
In the description and claims of the present application and the above-described drawings, the terms "center," "horizontal," "upper," "lower," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely for convenience of description and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more. Unless specifically stated or limited otherwise, the terms "mounted," "connected," and "coupled" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The term "comprising" and any variations thereof is intended to cover a non-exclusive inclusion. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
In order to improve the density of laser integration in unit area and improve the efficiency of laser scanning, in the embodiment of the application, the semiconductor laser chip is directly adopted to integrate on the substrate, so that the density of laser integration is improved, and the laser integration is arranged in a multi-section oblique line along the laser scanning direction, so that the laser distribution density in the vertical scanning direction is further improved, and the efficiency of laser scanning is greatly improved.
For ease of understanding, description will be given first of the semiconductor laser integrated device in the embodiment of the present application, referring to fig. 1 and 2, the semiconductor laser integrated device in the embodiment of the present application may include: a plurality of groups of chip arrays 10, a substrate 20 and a microlens array 30. Wherein,
as shown in fig. 2, the semiconductor laser chips 101 in the multi-chip array 10 are fixed on the same surface of the substrate 20 along the target straight line (L1) without overlapping. Each group of chip arrays 10 includes a plurality of semiconductor laser chips 101 distributed along a straight line, and the light emitting surfaces of all the chips are on the same side. In the application, chips are directly adopted for integration, the distance between the semiconductor laser chips 101 in each group of chip arrays can be reduced to tens of micrometers, and the semiconductor laser integrated devices are integrated at intervals of tens of micrometers, so that in an application scene needing to be scanned 300 times in the background technology, the semiconductor laser integrated devices in the application can be finished only by 5 times or so, and the laser scanning efficiency is greatly improved.
The applicant has noted that continuing to reduce pitch electromagnetic interference is serious and heat dissipation is increasingly difficult, and that the linear distance between semiconductor laser chips 101 often needs to be kept around tens of microns or even further to ensure stable operation. Although the pitch between lasers is reduced from 6000 microns to tens of microns in the prior art, scanning of all adjacent pixel rows in a high-precision image (e.g., an image with a unidirectional resolution greater than 1270) cannot be accomplished in a single pass, and there is still room for optimization. To further increase the density of unidirectional laser scanning, the straight line (L2 in the example) in which the semiconductor laser chips 101 are distributed in each group of chip arrays 10 in the present application is neither coincident nor perpendicular to the target straight line (L1), so that the semiconductor laser chips 101 in the chip arrays are arranged in multiple oblique lines along the laser scanning direction. In this way, when the plurality of chip arrays 10 perform the scanning motion in the direction perpendicular to the target straight line, the distance between the straight lines of the semiconductor laser chips 101 in the plurality of chip arrays 10 is kept constant, and it is known that the distance between the adjacent light spots in the scanning direction (the direction perpendicular to the L1) is reduced according to the fact that the length of any right-angled side of the right triangle is smaller than the length of the hypotenuse. On the premise that the linear distance between the adjacent semiconductor laser chips 101 on the L2 is unchanged, the linear distance of the projection points of the adjacent semiconductor laser chips 101 on the L2 on the L1 can be adjusted by reasonably adjusting the included angle between the L1 and the L2, so that the adjustment of the distance between the light spots of the semiconductor laser chips 101 in the chip array 10 in the scanning direction is realized, and the laser distribution density in the vertical direction of the scanning direction can be adjusted as required. In practical application, the semiconductor laser chips 101 with multi-segment diagonal arrangement are adopted, the scanning interval between the emergent lights of adjacent semiconductor laser chips 101 can be reduced to below 10 microns, and in an application scene needing to be scanned 300 times in the background technology, the scanning can be completed only by 1 time, so that the laser scanning efficiency is further improved.
Preferably, the semiconductor laser chips in each set of chip arrays are equally spaced. Alternatively, the spacing between the semiconductor laser chips in each set of chip arrays may also be unequal.
Preferably, the intervals between adjacent projection points of the light outlets of the semiconductor laser chips belonging to the plurality of groups of chip arrays on the target straight line are equal. I.e. M in FIG. 2 0 、M 1 、M 2 … Mn is preferably equal (to facilitate control of production errors) or unequal.
It should be noted that, for the convenience of production, the lines where the semiconductor laser chips 101 are distributed in each group of chip arrays shown in fig. 2 may be parallel to each other, and in other alternative embodiments of the present application, the lines where the semiconductor laser chips 101 are distributed may also be non-parallel, and only need not be perpendicular to the target line (L1), which is not limited in the present application. It will be appreciated that the alignment of the first semiconductor laser chip 101 in each group of chip arrays shown in fig. 2 is not necessary, and the positions of each group of chip arrays can be reasonably adjusted along the vertical direction of the target straight line (without affecting the projection pitch and the scanning pitch of the light outlet of each semiconductor laser chip 101 on the target straight line).
A plurality of power supplies (not shown) controlled by independent switches are provided on the substrate 20, and each power supply is electrically connected to one of the semiconductor laser chips 101 for supplying power. It will be appreciated that the specific power supply circuit may refer to the related art, for example, a dc power supply chip may be integrated, which includes multiple power supplies capable of being controlled by independent switches, and the output power of each power supply may be adjusted within a preset range. The specific direct current power supply chip can be reasonably selected according to the actual chip driving requirement, and similar circuits can be directly integrated on the substrate by referring to the circuits of the direct current power supply chip, and the structure of the specific power supply circuit is not described herein.
It should be noted that the substrate in the embodiments of the present application may be a PCB board or other types of circuit carrier boards, for example, an IC carrier board, conductive glass, etc., which is not limited herein.
The microlens array 30 is disposed in a direction perpendicular to the outgoing light of the semiconductor laser chips, and the light outlet of each semiconductor laser chip 101 is on the optical axis of one focusing lens in the microlens array 30, respectively, so that the outgoing light of each semiconductor laser chip can be focused. In the arrangement of the focusing lenses in the microlens array 30, only the light outlet of each semiconductor laser chip 101 needs to be ensured to be on the optical axis of one focusing lens, and the microlens array 30 can adopt the arrangement form of a grid matrix for simplifying the production process (i.e. the number of the focusing lenses in the microlens array 30 is greater than the number of the semiconductor laser chips 101).
As can be seen from the disclosure above, in the embodiments of the present application, the plurality of semiconductor light emitter chips are directly integrated, so that the interval between the emitted lights of the semiconductor light emitter chips is reduced, and the density of the emitted lights in a unit area is further improved. Meanwhile, the semiconductor laser chips are arranged into a plurality of sections of diagonal lines along the target straight line, when the device performs scanning movement along the direction perpendicular to the direction of the target straight line, the scanning interval of the emergent light of the adjacent semiconductor laser chips in the perpendicular direction of the target straight line can be smaller than the straight line distance of the adjacent semiconductor laser chips, so that the laser distribution density in the perpendicular direction of scanning is improved, and the laser scanning imaging efficiency is greatly improved.
Optionally, as a possible implementation manner, as shown in fig. 1, the semiconductor laser integrated device in this embodiment of the present application may further include a lens adjusting component 40, where the lens adjusting component is fixedly connected to the microlens array 30, and reciprocally adjusts a distance between the microlens array 30 and the substrate 20 in a parallel direction of the outgoing light under the driving of the motor. In particular, the driving motor in the lens adjusting assembly is preferably a voice coil motor, but may be other micro motors, which is not limited herein.
For ease of understanding, a scanning imaging method implemented based on the semiconductor laser integrated device in any of the possible embodiments described above will be described below. Referring to fig. 3, a scanning imaging method in an embodiment of the present application may include:
s301: and performing image rasterization on the target image to be imaged to obtain position distribution data of exposure points to be exposed in all pixel rows.
After the target image to be imaged is acquired, a raster image processor (RIP for short) in the related art is required to perform image rasterization processing on the target image to be imaged, so as to obtain binary attributes (namely exposure points and non-exposure points) of each pixel point in all pixel rows, and then obtain position distribution data of the exposure points to be exposed.
S302: each pixel row is associated with one semiconductor laser chip in the semiconductor laser integrated device according to the spacing between adjacent pixel rows.
The resolution of the target image determines the spacing between adjacent pixel rows, and each pixel row is associated with one semiconductor laser chip in the semiconductor laser integrated device according to the spacing between adjacent pixel rows, and each semiconductor laser chip only processes the scanning task of the pixel row associated with the semiconductor laser chip.
By way of example, a specific process for assigning the associated pixel rows to the semiconductor laser chips may be: recording the distance value of the projection point of each semiconductor laser chip in the multi-group chip array at the target straight line relative to the first projection point (one projection point selected randomly from all projection points can be used as the first projection point, or the projection point at the most edge can be pre-designated as the first projection point) to form a first distance set; a first semiconductor laser chip is associated with a first pixel row, and distance values of the intersection point of the subsequent pixel row on the target straight line and a first projection point are calculated in sequence to form a second distance set; and matching the distance value with the smallest difference value in the first distance set for the target distance value in each second distance set, wherein the semiconductor laser chip corresponding to the successfully matched distance value is used as the semiconductor laser chip associated with the corresponding pixel row.
For example, the first distance set includes {5, 14, 25, 35, 46, 56, 65, 75, 86}, and the second distance set includes {5, 25, 45, 65, 85}, the distance value with the smallest matching difference value of the target distance value in the second distance set in the first distance set is sequentially 5, 25, 46, 65, 86, and the semiconductor laser chips corresponding to the successfully matched values are the semiconductor laser chips associated with the corresponding pixel rows.
S303: the controlled semiconductor laser integrated device performs scanning movement along a direction perpendicular to the target straight line direction; during the scanning movement, confirming the real-time position of the projection point of the laser of the semiconductor laser chip on the exposure surface, and controlling the corresponding semiconductor laser chip to expose the exposure point when the real-time position of the projection point is consistent with the position of the exposure point in the associated pixel row.
In this embodiment, each semiconductor laser chip is independently controlled by a switch, and after laser light of each semiconductor laser chip is focused by an independent focusing lens, respective light spots can be formed on an exposure surface, and when the light spots are scanned along a scanning direction parallel to a pixel row (the scanning direction is parallel to a straight line direction in which the pixel row is located), the switching state (light emitting state) of each semiconductor laser chip can be controlled by a high frequency to selectively expose the pixel points in the scanned pixel row. The principle in specific selective exposure is: when the real-time position of the projection point is consistent with the position of the exposure point in the associated pixel row, the corresponding semiconductor laser chip is controlled to emit laser to expose the exposure point.
Specifically, the real-time position of the projection point of the laser light of the semiconductor laser chip on the exposure surface may be detected in real time by using a linear position encoder, or the real-time position of the projection point of the laser light of each semiconductor laser chip on the exposure surface may be calculated in real time based on the position of the mark point and the positional relationship between each semiconductor laser chip and the mark point, and the specific embodiment is not limited herein.
It should be understood that, in various embodiments of the present application, the sequence number of each step mentioned above does not mean the order of execution, and the execution order of each step should be determined by its functions and internal logic, and should not constitute any limitation on the implementation procedure of the embodiments of the present application.
As can be seen from the disclosure, in the embodiment of the present application, the semiconductor laser chips arranged in a multi-segment diagonal manner are used to perform the scanning motion along the direction perpendicular to the direction of the target line, and the scanning interval between the outgoing light of the adjacent semiconductor laser chips in the direction perpendicular to the target line can be smaller than the linear distance between the adjacent semiconductor laser chips, so that the laser distribution density in the direction perpendicular to the scanning direction is improved, and the efficiency of laser scanning imaging is greatly improved.
On the basis of the embodiment shown in fig. 3, the applicant notes that in some special application fields, such as PCB platemaking, the pixel point where the via is located needs to have a larger exposure power than the normal exposure point, and the output power thereof needs to be adjusted during the exposure process. Optionally, as a possible implementation manner, the scanning imaging method in the embodiment of the present application may further include: the power level is configured for the exposure points in the pixel row and the output power of the associated semiconductor laser chip is controlled to match the power level in accordance with the power level. The specific power level configuration may be determined according to the type and thickness of the photoresist selected for the exposure surface, and is not limited herein.
Optionally, as a possible implementation manner, the scanning imaging method in the embodiment of the present application may further include: and calculating a target distance between the micro lens array and the substrate according to the photoresist thickness parameter, and adjusting the distance between the micro lens array and the substrate to be equal to the target distance. In the actual production process, the thickness of the photoresist coated on the exposure surface is inconsistent, the larger the thickness value is, the smaller the distance between the light source and the exposure surface is, and in order to ensure that the focused light spots are maximally exploded through the photoresist, the positions of the light spots need to be adjusted by adjusting the distance between the lens and the light source. Therefore, after the photoresist thickness parameter is obtained, the target distance between the microlens array and the substrate can be calculated, and the distance between the microlens array and the substrate can be adjusted to be equal to the target distance.
The above embodiments are merely for illustrating the technical solution of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the corresponding technical solutions.
Claims (10)
1. A semiconductor laser integrated device, characterized by comprising: a plurality of groups of chip arrays, a substrate and a micro lens array; wherein,
the multiple groups of chip arrays are fixed on the same surface of the substrate along the target straight line in a non-overlapping manner; each group of chip arrays comprises a plurality of semiconductor laser chips distributed along a straight line, and the straight line of the chip distribution in each group of chip arrays is neither coincident with nor perpendicular to the target straight line;
the substrate is provided with a plurality of paths of independent switch controlled power supplies, and each path of power supply is electrically connected with one semiconductor laser chip for supplying power;
the micro lens array is arranged in the vertical direction of the emergent light of the semiconductor laser chips, and the light outlet of each semiconductor laser chip is respectively arranged on the optical axis of a corresponding focusing lens in the micro lens array, so that the emergent light of each semiconductor laser chip is focused.
2. The semiconductor laser integrated device of claim 1, wherein the semiconductor laser chips in each set of chip arrays are equally spaced.
3. The semiconductor laser integrated device according to claim 2, wherein the light outlets of the semiconductor laser chips to which the plurality of chip arrays belong are equally spaced between adjacent projection points on the target straight line.
4. The semiconductor laser integrated device according to claim 2, wherein the straight lines in which the chips in each of the chip arrays are distributed are parallel to each other.
5. The semiconductor laser integrated device according to any one of claims 1 to 4, wherein an output power of each power supply integrated on the substrate is adjustable within a preset range.
6. The semiconductor laser integrated device according to any one of claims 1 to 4, further comprising: and the lens adjusting assembly is fixedly connected with the micro lens array and is used for adjusting the distance between the micro lens array and the substrate in the parallel direction of emergent light.
7. A scanning imaging method, characterized in that it is applied to the semiconductor laser integrated device according to any one of claims 1 to 6, comprising:
performing image rasterization on a target image to be imaged to obtain position distribution data of exposure points to be exposed in all pixel rows, and associating each pixel row with one semiconductor laser chip in the semiconductor laser integrated device according to the interval between adjacent pixel rows;
controlling the semiconductor laser integrated device to perform scanning movement along the direction perpendicular to the direction of the target straight line; during the scanning movement, confirming the real-time position of the projection point of the laser of the semiconductor laser chip on the exposure surface, and controlling the corresponding semiconductor laser chip to expose the exposure point when the real-time position of the projection point is consistent with the position of the exposure point in the associated pixel row.
8. The scanning imaging method of claim 7, wherein said associating each pixel row with one semiconductor laser chip in said semiconductor laser integrated device according to a pitch between adjacent pixel rows comprises:
recording distance values of projection points of light outlets of the semiconductor laser chips in the plurality of groups of chip arrays at the target straight line relative to a first projection point to form a first distance set;
a first semiconductor laser chip is associated with a first pixel row, and distance values of the subsequent pixel row at the intersection point of the target straight line and the first projection point are calculated in sequence to form a second distance set;
and matching the distance value with the smallest difference value in the first distance set for the target distance value in each second distance set, wherein the semiconductor laser chip corresponding to the successfully matched distance value is used as the semiconductor laser chip associated with the corresponding pixel row.
9. The scanning imaging method according to any one of claims 6 to 8, characterized by further comprising:
a power level is configured for the exposure points in the pixel row and the output power of the associated semiconductor laser chip is controlled to match the power level in accordance with the power level.
10. The scanning imaging method according to any one of claims 6 to 8, characterized by further comprising: and calculating a target distance between the micro lens array and the substrate according to the photoresist thickness parameter, and adjusting the distance between the micro lens array and the substrate to be equal to the target distance.
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