CN117673718A - Antenna with semiconductor structure, package antenna, radio device and electronic equipment - Google Patents

Abstract

The embodiment of the application provides an antenna with a semiconductor structure, a packaged antenna, a radio device and electronic equipment. The semiconductor structure is in an alternating stack structure of metal layers and dielectric layers and further comprises a metal structure communicated with at least two metal layers; the metal layers comprise a first metal layer, at least one second metal layer, and a third metal layer; the antenna comprises: a radiation structure formed by each metal layer and each metal structure in the semiconductor structure, and a feed structure formed by at least one of each metal layer and each metal structure; wherein the radiating structure comprises: the first radiating component is formed on the second metal layer, and the second radiating component is connected with the first radiating component and the third metal layer in a metal structure mode; and the feed structure is coupled to the radiating structure to excite the radiating structure. The antenna provided by the embodiment of the application is simple in structure and has a larger beam deflection direction and beam width.

Description

Antenna with semiconductor structure, package antenna, radio device and electronic equipment

Technical Field

The present disclosure relates to the field of radio technologies, and in particular, to an antenna with a semiconductor structure, a package antenna, a radio device, and an electronic apparatus.

Background

The Antenna-in-Package (AiP) technology integrates the Antenna into a Package carrying a chip through a packaging material and a process, and well considers the performance, cost and volume of the Antenna.

In the millimeter wave band, small dimensional deviations in antenna processing may lead to dramatic performance degradation. In order to reduce the packaging difficulty of the antenna, an antenna unit with simple structure and beam deflection and wide beam capability needs to be designed.

Disclosure of Invention

The application provides an antenna with a semiconductor structure, a packaged antenna, a radio device and electronic equipment, wherein the antenna is simple in structure and has beam deflection and wide beam capability.

In a first aspect, embodiments of the present application provide an antenna with a semiconductor structure, where the semiconductor structure is an alternately stacked structure of metal layers and dielectric layers, and further includes a metal structure that communicates at least two metal layers; the metal layers comprise a first metal layer, at least one second metal layer and a third metal layer;

the antenna includes: a radiation structure formed by using each metal layer and each metal structure in the semiconductor structure, and a feed structure formed by using at least one of each metal layer and each metal structure;

wherein the radiation structure is used for energy conversion in a radiation range with beam deflection, and comprises: the first radiation component is formed on the second metal layer, and the second radiation component is connected with the first radiation component and the third metal layer in the metal structure mode;

the feed structure is coupled to the radiating structure to excite the radiating structure.

In one possible embodiment, the antenna comprises a plurality of the radiating structures; wherein the first radiating element in each radiating structure is formed in a different second metal layer; wherein at least one of the radiating structures is fed by the feed structure.

In a possible embodiment, at least one of the radiating structures is fed by means of inductive coupling.

In one possible embodiment, the first radiation member is in the form of a sheet; the second radiation member is in a sheet shape or a columnar shape.

In one possible embodiment, the first side of the first radiating element has a dimension L1, the first side of the second radiating element has a dimension L2, and the total dimension of L1 and L2 is set based on half the medium wavelength; wherein the first side of the first radiating element is connected to the first side of the second radiating element for the second radiating element to be connected between the second metal layer and the third metal layer.

In a possible embodiment, the radiation structure further comprises a third radiation component formed on the third metal layer, and the induction feeding is performed by other radiation components in the radiation structure.

In one possible embodiment, the feed structure feeds the first radiating element.

In one possible implementation, the semiconductor structure belongs to the packaging structure of the chip die.

Compared with the antenna in the prior art, the antenna provided by the embodiment of the application is simpler in structure; and the antenna provided by the embodiment of the application has larger beam deflection direction and beam width.

In a second aspect, embodiments of the present application provide a packaged antenna, including: at least one antenna according to the first aspect.

In one possible implementation manner, the package antenna provided in the embodiment of the present application, a plurality of the antennas form a transmitting antenna array or a receiving antenna array; wherein the beam deflections of the plurality of antennas are different.

In a possible implementation manner, the package antenna provided in the embodiment of the present application further includes: and the plurality of metal posts are positioned on the periphery of the antenna.

The package antenna provided by the embodiment of the application comprises the antenna of the first aspect, and the antenna is simple in structure, so that the difficulty of antenna package is reduced, and meanwhile, the miniaturization of the package antenna is realized. Meanwhile, the antenna has larger beam deflection direction and beam width, so that the packaged antenna has larger beam deflection direction and beam width.

In a third aspect, embodiments of the present application provide a radio device, including:

the chip bare chip comprises a signal transmitting end and a signal receiving end;

a package structure for packaging the chip die, wherein the package structure includes the package antenna of the second aspect; and a transmitting antenna in the packaging antenna is connected with the signal transmitting end, and a receiving antenna in the packaging antenna is connected with the signal receiving end.

In one possible implementation manner, the radio device provided in the embodiment of the present application includes: a radar sensor.

According to the radio device provided by the embodiment of the application, the packaging antenna of the second aspect is adopted, and the miniaturization of the radar packaging chip is realized due to the fact that the antenna unit in the packaging antenna is simple in structure; meanwhile, the antenna has larger beam deflection direction and beam width, so that the radio device has wider detection range and detection direction.

In a fourth aspect, embodiments of the present application provide an electronic device, including:

an equipment body; and

a radio device according to the third aspect provided on the apparatus body.

According to the electronic equipment provided by the embodiment of the application, the radio device is adopted, and the antenna has a larger beam deflection direction and beam width, so that the detection range and detection direction of the electronic equipment are improved.

The embodiment of the application provides an antenna, a packaged antenna, a radio device and electronic equipment of a semiconductor structure, wherein the semiconductor structure is of a structure of alternately stacking metal layers and dielectric layers, and the antenna further comprises a metal structure communicated with at least two metal layers; the metal layers comprise a first metal layer, at least one second metal layer and a third metal layer; the antenna includes: a radiation structure formed by using each metal layer and each metal structure in the semiconductor structure, and a feed structure formed by using at least one of each metal layer and each metal structure; wherein the radiation structure is used for energy conversion in a radiation range with beam deflection, and comprises: the first radiation component is formed on the second metal layer, and the second radiation component is connected with the first radiation component and the third metal layer in the metal structure mode; the feed structure is coupled to the radiating structure to excite the radiating structure. The antenna provided by the embodiment of the application is simple in structure and has a larger beam deflection direction and beam width.

Drawings

Fig. 1 is a schematic perspective view of a semiconductor structure with an antenna according to an embodiment of the present application;

FIG. 2 is a schematic view of section A-A of FIG. 1;

FIG. 3 is a schematic structural view of a second radiation member according to an embodiment of the present application;

FIG. 4a is a graph of the position of the feed structure in the semiconductor structure of FIG. 1 versus current flow;

FIG. 4b is a graph of the position of the feed structure in the semiconductor structure of FIG. 1 versus the current flow;

fig. 5 is a schematic diagram of another perspective structure of a semiconductor structure with an antenna according to an embodiment of the present application;

FIG. 6 is a schematic view of section A-A of FIG. 5;

fig. 7 is a schematic view of another perspective structure of a semiconductor structure with an antenna according to an embodiment of the present application;

FIG. 8 is a schematic view of section A-A of FIG. 7;

fig. 9 is a schematic view of a radiation direction of an antenna in a YOZ plane in a semiconductor structure according to an embodiment of the present application;

FIG. 10a is a graph of feed structure position versus current flow in the semiconductor structure of FIG. 7;

FIG. 10b is a graph of feed structure position versus current flow in the semiconductor structure of FIG. 7;

fig. 11 is a schematic structural diagram of an antenna array according to an embodiment of the present application;

fig. 12 is a radiation pattern of the antenna array of fig. 11 in the YOZ plane.

Detailed Description

For the purposes of making the objects, technical solutions and advantages of the present application more apparent, the technical solutions in the embodiments of the present application will be clearly and completely described in the following in conjunction with the embodiments of the present application, and it is apparent that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.

It should be noted that, unless explicitly stated or limited otherwise, the terms "connected" and "coupled" should be interpreted broadly, for example, the connection may be a fixed connection, or may be an indirect connection via an intermediary, or may be a connection between two components or an interaction relationship between two components. The specific meaning of the terms in this application will be understood by those skilled in the art as the case may be.

In the description of the present application, the terms "first," "second," "third," and the like are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that embodiments of the present application may be implemented in sequences other than those described herein.

Furthermore, the terms "comprises," "comprising," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

In some application scenarios, the angular radar sensor may be disposed on a device such as a vehicle, a ship, etc. and used for detecting surrounding environments, so as to help the device such as the vehicle to find surrounding obstacles in time, or help the device such as the vehicle to locate.

Because the detection range and the detection direction of the current angle radar sensor are narrower, a plurality of angle radar sensors are usually required to be arranged on equipment such as vehicles and the like to achieve a better detection effect.

Since the detection range and detection direction of the angular radar sensor are determined by the internal antenna. In the related art, the detection range of a radar sensor is generally increased by increasing the beam width of an antenna. Currently, the relatively common wide-beam antennas are mainly classified into two types, one of which is to realize a wide beam by various forms of magnetic electric dipoles, and the other of which is to realize a wide beam by using an antenna array. The main mechanism of electromagnetic dipoles to achieve a broad beam is: the expansion of the wave beam is realized by superposition of the electrode and the magnetic pole patterns in space, which requires precise design of the electrode and the magnetic pole and the position relationship between the electrode and the magnetic pole, and generally has complex structure and high design difficulty; the antenna array is characterized in that a plurality of antennas are used, different amplitudes and phases are distributed to the antennas at different positions, so that the antennas in the array are overlapped in space, at least three or more antenna units are needed for the antenna array of a general expanding wave beam, a power distribution network needs to be adjusted with great care in design, and the final effect is very sensitive to the amplitude proportion and the phase difference of the antennas. That is, the current method for enhancing the beam width of the antenna is complex, the structure of the antenna is complex, the number of the antennas in the antenna array is large, and the overall size of the antenna is large.

For radar sensors, antennas of the type described above need to be arranged on the printed circuit board on which the radar chip is located. It is difficult to compactly arrange with the radar chip.

In order to solve the above technical problems, embodiments of the present application provide an antenna that can be disposed on a printed circuit board or a package of a radar sensor and has a wider beam deflection direction and beam width than the above antenna unit.

The technical scheme shown in the application is described in detail through specific embodiments.

Fig. 1 is a schematic perspective view of a semiconductor structure with an antenna according to an embodiment of the present application. FIG. 2 is a schematic view of section A-A of FIG. 1. Wherein the dielectric layer is not shown in fig. 1 and the metal layer is not shown in fig. 2. Referring to fig. 1, an embodiment of the present application provides a semiconductor structure including a first metal layer 10, a second metal layer 30, a third metal layer 50, a second metal pillar 70, and a feeding structure 80. Wherein each metal layer (10, 30, and 50) is a layer structure with a specific pattern manufactured by utilizing the conductive property of metal. A plurality of second metal layers 30 may be disposed between the first metal layer 10 and the third metal layer 50. As shown in fig. 2, the adjacent metal layers are isolated by dielectric layers, and the reference numerals 20 and 40 are dielectric layers, and the first metal layer 10, the first dielectric layer 20, the second metal layer 30, the second dielectric layer 40 and the third metal layer 50 are sequentially stacked. The second metal pillar 70 is a metal structure connecting different metal layers, which connects the second metal layer 30 by way of example and ends in the third metal layer 50 through the pad 72. The second metal layer 30 is etched with a first rectangular region 31, and the arrangement structure of the first rectangular region 31 and a set of second metal pillars 70 electrically connected to the first rectangular region 31 forms a radiation structure of the antenna. The feed structure 80 includes a pad 81 and a metal post 82 connected between the first rectangular region 31 and the pad 81. Here, the skilled person will know that the feed structure is a transmission structure connecting between the signal end of the signal transmitter (or signal receiver) in the radar chip and the radiating structure, and that the radiating structure excites electromagnetic waves of a specific radiation characteristic. For this reason, the above-described feeding structure is only one example.

Also included in the semiconductor structure is a shielding structure in which a plurality of first metal pillars 60 (not shown in fig. 1, shown in fig. 2) are arranged. Wherein each first metal pillar 60 of the shielding structure shields at least the above-mentioned radiating structure of the antenna and also shields part of the feed structure connected to the radiating structure. For example, as shown in fig. 2, the shielding structure includes first metal posts 60 penetrating through the second metal layer 30, and pads 62 located at the third metal layer 50 to close one ends of the first metal posts 60, and pads 61 located at the first metal layer 10 to close the other ends of the first metal posts 60, wherein each of the first metal posts 60 is grounded through a pad 62 (or 61) to form a shielding structure of the radiation structure. It should be noted that the first metal pillar 60 is a metal structure connecting two metal layers. The shielding structure may also be formed by surrounding the radiating structure, or surrounding the radiating structure and the feed structure with metal structures of other shapes. Wherein there is a physical separation between the first metal pillar 60 and the second metal pillar 70. Wherein the metal structure 60 is grounded and there is an insulating space (not shown) between the metal layers (50, 30, 10) according to the conductive function of each metal layer and each metal structure in the package; there is a space between the pads 81 in the feed structure 80 and the pads 61 located in the first metal layer 10 to be insulated.

As can be seen from the above examples, the radiating structure comprises a first radiating member and an adjoining second radiating member. Wherein the first radiating element and the second radiating element each provide electro-magnetic energy conversion based on the radiation principle of the patch-type radiating structure. In order to excite the radiation structure with the feed to the current flow direction as shown in fig. 2, the total dimension d1 of the first radiation element and the second radiation element in the radiation structure along the current is approximately half the wavelength of the working medium. The dimension d2 of the radiation structure perpendicular to the current direction is smaller than the dimension d1. As shown in fig. 2, the first side of the first radiating element is a side along the current flow direction, the dimension is L1, the first side of the second radiating element is a side along the current flow direction, the dimension is L2, the total dimension of the remaining L2 of the L1 is d1, and the first side of the first radiating element and the first side of the second radiating element are connected for the second radiating element to be connected between the second metal layer and the third metal layer.

The first radiation member is in the form of a sheet, and as shown in fig. 2, the first rectangular region 31 is an example of the first radiation member of the above-described radiation structure. The first radiation member is a patch structure disposed on the second metal layer 30, and the envelope shape of the outline thereof may be exemplified by a zigzag patch, a circular patch, or the like.

The second radiation member is in the form of a sheet or a column, and the second metal column 70 is one example of the second radiation member of the above-described radiation structure. The second metal column is a columnar structure formed by utilizing a metal hole. The number of second metal posts 70 may be plural depending on the value of the dimension d2 in the radiating structure to create a radiating effect that may be equivalent to a patch. The interval between the adjacent second metal pillars 70 may be set according to the interval between holes manufactured by the semiconductor manufacturing process, for example, the length of the second metal pillars 70 is determined according to the layer thickness of a dielectric layer through which they are formed, which is related to the layer thickness of the dielectric layer manufactured by the semiconductor manufacturing process.

The second radiation member may be not only columnar, but also sheet-like as shown in fig. 3. For example, one side of the first radiation member 31 extends from the second metal layer 30 to an outer wall of the dielectric layer between the second metal layer 30 and the third metal layer 50, to which the second radiation member 70 'is attached in a sheet-like structure, wherein the sheet-like structure is terminated to the third metal layer 50 by a pad 72'.

The feed structure is coupled to the radiating structure and is physically spaced from the ground element. The feed structure includes leads in the semiconductor structure for connecting to signal transmitting or signal receiving terminals in the chip. The feed structure may be coupled to the radiating structure using microstrip lines, coaxial lines, or inductive couplings. For example, the feeding structure 80 shown in fig. 2 is connected to a first radiating element (e.g. the first rectangular region 31), and the feeding structure 80 and the radiating structure are fed by means of coaxial feeding.

The feeding structure may be connected to the first radiating member or the second radiating member in relation to the structure of the feeding structure in the package structure. The position of the feed structure exciting the radiating structure is related to the excited current distribution. For example, as shown in fig. 4a, the feed structure 80 is located approximately at the edge of the first rectangular region 31 (i.e. the first radiating element) along the X-axis and away from the second radiating element, such as midway along the edge. The current generated by the radiating structure is shown by the arrows. As another example, as shown in fig. 4b, the feeding structure 80' is located approximately at an edge of the first rectangular region 31 (i.e. the first radiating member) along the Y-axis, such as in the middle of the edge. The current generated by the radiation structure is directed from the paper surface to the paper back direction.

The first radiation component and the second radiation component form a radiation structure with a bending shape, and electromagnetic waves radiated by the radiation structure are spatially synthesized, so that the antenna is biased to the negative Y direction in the antenna direction of the YOZ plane. The antenna shown in the embodiment of the application is compact in structure and has beam deflection and wide beam capability.

Fig. 5 is a schematic diagram of another perspective structure of a semiconductor structure with an antenna according to an embodiment of the present application. Fig. 6 is a schematic view of section A-A of fig. 5. Wherein the dielectric layer is not shown in fig. 1 and the metal layer is not shown in fig. 2. Referring to fig. 5 and 6, the semiconductor structure with an antenna is different from the first semiconductor structure with an antenna in the main structure, in that the antenna further includes: a third radiation member 90 disposed on the third metal layer 50, the third radiation member 90 having a physical space from the second metal pillar 70; the third radiating element 90, the first radiating element 31, the second metal post 70 and the feed structure 80 constitute the main components of the antenna in this example. The third radiating member 90 can be sheet-like and inductively coupled with a radiating structure comprising the first radiating member 31 and the second metal post 70 to act to increase the directivity of the antenna.

The antenna in the semiconductor structure shown in fig. 5 functions as a beam director compared to the antenna in the semiconductor structure of fig. 1, so that the direction deflection of the overall antenna is greater, i.e. the deflection capability of the beam is greater compared to the antenna in the semiconductor structure of fig. 1.

Fig. 7 is a schematic view of another three-dimensional structure of a semiconductor structure with an antenna according to an embodiment of the present application. Fig. 8 is a schematic view of section A-A of fig. 7. Referring to fig. 7 and 8, compared with the semiconductor structure shown in fig. 5, the semiconductor structure of the present embodiment includes a plurality of second metal layers (300, 320) and three dielectric layers (20, 40, 60), and a plurality of radiating structures in the antenna are arranged by using the plurality of second metal layers, wherein the first metal layer 10 is arranged with the pads 81 of the feeding structure 80, and the metal pillars 82 in the feeding structure 80 are arranged between the first metal layer 10 and the second metal layer 300; the metal hole 82 connects a first radiating portion 31 of one of the radiating structures (31, 70, 72), and the radiating structure (31, 70, 72) connects a second radiating portion formed by a set of metal posts 70. The metal posts 70 extend from the first radiating portion 31 to the third metal layer 50 and terminate at pads 72 located in the third metal layer 50. The antenna further comprises a further radiating structure (32, 71, 73), which radiating structure (32, 71, 73) comprises a first radiating portion 32 and a second radiating portion formed by a set of metal posts 71. Unlike the radiating structure (31, 70, 72), the first radiating portion 32 is arranged at another second metal layer 320, and the metal post 71 connects between the second metal layer 320 and the third metal layer 50, and ends at the pad 73 of the third metal layer 50. The antenna further comprises a patch metal 90 arranged in the third metal layer 50. The patch metal 90, the radiating structure (32, 71, 73) and the radiating structure (31, 70, 72) may be inductively coupled to each other for feeding purposes; or the two radiating structures and the patch metal are fed with the same feed structure (not shown). This example increases the effect of antenna directivity by configuring different kinds of radiation structures in a plurality of metal layers.

The semiconductor structure provided by the embodiment of the application belongs to a packaging structure of a chip bare chip.

Fig. 9 is a schematic diagram of a radiation direction of an antenna in a YOZ plane in a semiconductor structure according to an embodiment of the present application. Wherein the maximum radiation direction of the antenna can reach-35 deg.

The antenna examples provided in the embodiments of the present application may adjust the deflection capability of the beam by adjusting the antenna parameters, the number of radiating structures, or the different types of matching of the radiating structures and the patch metal, etc. Such as for the purpose of achieving a greater deflection of the beam. In order to further increase the deflection direction of the antenna, the number of the first radiation component and the second radiation component can be increased, and the second metal layer and the dielectric layer are correspondingly required to be increased.

On the basis of the above embodiments, the polarization direction of the antenna can be changed by changing the position of the feed structure.

Fig. 10a is a graph of the relationship between the position of the feed structure and the current flow in the semiconductor structure shown in fig. 7. Similar to fig. 4a, please refer to fig. 10a, the feeding structure 80 is located at an edge position of the first rectangular region 31 of the first radiating member parallel to the x-axis, and the current direction in the first radiating structure is along the arrow direction. Fig. 10b is a graph of the relationship between the position of the feeding structure and the current flow direction in the semiconductor structure shown in fig. 7. Similar to fig. 4b, please refer to fig. 10b, the position of the feeding structure 80' is located at the edge position of the first rectangular region 31 of the first radiating member parallel to the y-axis, and the current direction in the first radiating member is perpendicular to the xy-plane direction.

As can be seen from the above examples, the application uses at least one patch-type radiation portion (such as a first radiation portion) and at least one metal hole row (or sheet-like radiation portion) connected with the patch-type radiation portion (such as a second radiation portion) to form N radiation structures, wherein N is larger than or equal to 1.

In some examples, the N radiating structures may be individually fed with individually configured feed structures, such that the radiating angle, radiating direction of the antenna is controlled by the radar chip.

In other examples, as mentioned in the above examples, when the number of the radiation structures is plural, the first radiation member in each of the radiation structures is formed in a different second metal layer. In addition, the second radiation components in the N radiation structures are separated by a dielectric layer, so that the energy conversion between the radio frequency electric signals and the electromagnetic waves by the radiation structures is realized. The N radiating structures are fed by means of inductive coupling, so that the purpose of feeding a plurality of radiating structures is achieved by using the same feeding structure, and therefore the beam deflection and the radiation range of the whole antenna are increased.

The structure of the antenna in the semiconductor structure of the present application is illustrated by means of the embodiments shown in fig. 1-10 b. On the basis of the antenna, the application also provides an example of a corresponding antenna array.

The antenna array at least comprises two antennas, the plurality of antennas form a transmitting antenna array or a receiving antenna array, and signal transmitting ends/signal receiving ends connected with the antennas can be different or the same. The radiation directions of adjacent antenna elements are typically different to increase the radiation width.

Fig. 11 is a schematic structural diagram of an antenna array according to an embodiment of the present application. Referring to fig. 11, an example of an antenna with a number of antenna units of 2 and an antenna with a third semiconductor structure will be described. In this example, the two antennas of the antenna array are arranged in a symmetrical manner, for which reason the radiation directions of the two antennas are also symmetrical. Taking the example that two antennas in the antenna array are both transmitting antennas (or receiving antennas), the whole radiation range of the transmitting antenna array (or receiving antenna array) is enlarged, and the radiation blind area of a single transmitting antenna in the beam deflection opposite direction can be reduced. Taking one of two antennas in the antenna array as a transmitting antenna and the other antenna as a receiving antenna as an example, the whole radiation range of the antenna array is larger than that of a single antenna, and the antenna array is suitable for a vehicle-mounted forward/backward radar sensor and the like.

Fig. 12 is a radiation pattern of the antenna array of fig. 11 in the YOZ plane. The antenna array may be a transmitting antenna array or a receiving antenna array, and as can be seen from fig. 12, the maximum radiation direction is plus or minus 40deg, the beam width is extremely wide, and the radiation efficiency of the antenna array is about ninety percent when the radiation is dropped by only 5dB at plus or minus 75 deg.

The plurality of antennas in the antenna array may also be arranged in other transverse/longitudinal/staggered arrangements, depending on the requirements of the radar sensor for the radiation range.

The antenna array provided by the embodiment of the application can greatly widen the beam width of the antenna by only comprising the two antennas. Meanwhile, the number of the required antennas in the antenna array is small, the antenna is simple in structure, the difficulty of antenna packaging is reduced, and meanwhile miniaturization of the packaged antenna is realized.

The embodiment of the application also provides a packaging antenna, which can comprise any one of the antennas, wherein a plurality of antennas form a transmitting antenna array or a receiving antenna array; wherein the beam deflections of the plurality of antennas are different. The packaged antenna also comprises a plurality of metal posts, wherein the metal posts are positioned at the periphery of each antenna or the periphery of the whole array of antennas so as to improve the shielding effect.

The package antenna provided by the embodiment of the application comprises the antenna, and the antenna is compact in structure, so that a plurality of antennas can be packaged on the package structure of the radar chip, and the space between the antennas can be increased, so that the physical isolation degree is increased. Meanwhile, the antenna has larger radiation direction and beam width, so that the packaged antenna has larger radiation direction and beam width.

The embodiment of the application also provides a radio device, which can comprise a chip bare chip and a packaging structure, wherein the chip bare chip comprises a signal transmitting end and a signal receiving end, the packaging structure is used for packaging the chip bare chip, and the packaging structure comprises the packaging antenna; the packaging antenna is integrated on the packaging structure to form an Aip structure; the transmitting antenna in the packaging antenna is connected with the signal transmitting end, and the receiving antenna in the packaging antenna is connected with the signal receiving end. Wherein the chip die includes, for example, a die of a radar chip. The package structure is exemplified by a package body of a radar chip.

The AiP structure is a structure of forming the above-mentioned packaged antenna by adopting a packaging process. The chip bare chip is connected with each antenna on the packaging structure through a transmission line in the packaging structure to correspondingly transmit radio frequency signals and receive echo signals. Thus, the chip die is used for converting the analog signal into a baseband digital signal; and even can be used for processing signals by using the baseband digital signals so as to obtain communication data, auxiliary driving data, security check imaging data, human body vital sign parameter data and the like. Since the radio device of the present application adopts the aforementioned package antenna, the same advantageous effects as those of the aforementioned package antenna can be obtained by referring to the foregoing description, and further description is omitted herein. Optionally, the encapsulated antenna of the present application may be applied to the fields of communication, automatic driving assistance, security imaging, and search and rescue equipment. For example, the radio may be a radar sensor.

Taking a radar sensor as an example, a signal transmitter and a signal receiver are included in the chip die. Each package antenna arranged on the package body is connected with a transmitting end or a receiving end in the chip bare chip so as to realize radio frequency signal transmission.

The signal transmitter is used for transmitting radio frequency transmitting signals to a transmitting antenna in the packaging antenna, and the transmitting antenna radiates detection signal waves. Specifically, the signal transmitter processes the reference electric signal provided by the signal source in a frequency modulation/phase modulation manner, and modulates the reference electric signal into a radio frequency transmission electric signal in a radio frequency band so as to output the radio frequency transmission electric signal to the transmitting antenna. For example, the signal transmitter feeds a radio frequency transmit signal to the transmit antenna such that the transmit antenna generates a probe signal wave having a center frequency in a frequency band such as 64GHz, or 77 GHz. The center frequency of the detection signal wave can be fixed frequency, or the detection signal wave is an electromagnetic wave which sweeps with the center frequency and a preset bandwidth.

When the detection signal wave is reflected by the object, an echo signal wave is formed. The receiving antenna receives the echo signal wave to generate a radio frequency receiving signal.

The signal receiver is used for utilizing radio frequency transmitting signals to carry out frequency mixing, filtering, AD conversion and other processes on radio frequency receiving signals output by the receiving antenna in the packaging antenna so as to output baseband digital signals.

In some examples, the radar chip further includes a signal processor. The signal processor is connected with the signal transceiver and is used for extracting measurement information from the baseband digital signal through signal processing and outputting measurement data. The signal processing comprises digital signal processing calculation based on phase, frequency, time domain and the like of at least one path of baseband digital signals to be processed provided by at least one path of receiving antennas. The measurement data includes at least one of: distance data representing a relative distance of the detected at least one obstacle; speed data representing a relative speed of the detected at least one obstacle; angle data representing the relative angle of the detected at least one obstacle, etc.

The embodiment of the application also provides electronic equipment, which comprises an equipment body and a radio device arranged on the equipment body and used for target detection.

The apparatus includes: an equipment body; and the radio device of the above embodiment provided on the apparatus body; wherein the radio device is used for target detection.

In an alternative embodiment, the apparatus may be a component or product for applications such as smart home, transportation, smart home, consumer electronics, monitoring, industrial automation, in-cabin detection, and health care. For example, the device may be an intelligent transportation device (such as an automobile, a bicycle, a motorcycle, a ship, a subway, a train, etc.), a security device (such as a camera), a liquid level/flow rate detection device, an intelligent wearable device (such as a bracelet, glasses, etc.), an intelligent home device (such as a sweeping robot, a door lock, a television, an air conditioner, an intelligent lamp, etc.), various communication devices (such as a mobile phone, a tablet computer, etc.), etc., a barrier gate, an intelligent traffic indicator, an intelligent indicator, a traffic camera, various industrial mechanical arms (or robots), etc., and various instruments for detecting vital sign parameters and various devices carrying the instruments, such as an in-car detection, an indoor personnel monitoring, an intelligent medical device, a consumer electronic device, etc.

In yet another alternative embodiment, when the apparatus is applied to an advanced driving assistance system (i.e., ADAS), a radio device (e.g., millimeter wave radar) as an on-board sensor may provide security for the ADAS system with various functions such as automatic braking assistance (i.e., AEB), blind spot detection warning (i.e., BSD), lane changing assistance warning (i.e., LCA), reverse assistance warning (i.e., RCTA), etc.

The foregoing description is only of the preferred embodiments of the present application and is presented as a description of the principles of the technology being utilized. It will be appreciated by persons skilled in the art that the scope of the disclosure referred to in this application is not limited to the specific combinations of features described above, but it is intended to cover other embodiments in which any combination of features described above or equivalents thereof is possible without departing from the spirit of the disclosure. Such as the above-described features and technical features having similar functions (but not limited to) disclosed in the present application are replaced with each other.

Moreover, although operations are depicted in a particular order, this should not be understood as requiring that such operations be performed in the particular order shown or in sequential order. In certain circumstances, multitasking and parallel processing may be advantageous. Likewise, while several specific implementation details are included in the above discussion, these should not be construed as limiting the scope of the present application. Certain features that are described in the context of separate embodiments can also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments separately or in any suitable subcombination.

Although the subject matter has been described in language specific to structural features and/or methodological acts, it is to be understood that the subject matter defined in the appended claims is not necessarily limited to the specific features or acts described above. Rather, the specific features and acts described above are example forms of implementing the claims.

Claims (14)

1. An antenna of a semiconductor structure, characterized in that the semiconductor structure is of an alternating stack structure of metal layers and dielectric layers, and further comprises a metal structure communicating at least two metal layers; the metal layers comprise a first metal layer, at least one second metal layer and a third metal layer;

the antenna includes: a radiation structure formed by using each metal layer and each metal structure in the semiconductor structure, and a feed structure formed by using at least one of each metal layer and each metal structure;

wherein the radiation structure is used for energy conversion in a radiation range with beam deflection, and comprises: the first radiation component is formed on the second metal layer, and the second radiation component is connected with the first radiation component and the third metal layer in the metal structure mode;

the feed structure is coupled to the radiating structure to excite the radiating structure.

2. The semiconductor structure antenna of claim 1, wherein the antenna comprises a plurality of the radiating structures; wherein the first radiating element in each radiating structure is formed in a different second metal layer; wherein at least one of the radiating structures is fed by the feed structure.

3. The semiconductor-structured antenna of claim 2, wherein at least one of the radiating structures is fed by means of inductive coupling.

4. A semiconductor construction antenna according to any one of claims 1-3, wherein the first radiating element is sheet-like; the second radiation member is in a sheet shape or a columnar shape.

5. The semiconductor-structured antenna of claim 1, wherein the first side of the first radiating element has a dimension L1 and the first side of the second radiating element has a dimension L2, the total dimension of L1 and L2 being set based on half a dielectric wavelength; wherein the first side of the first radiating element is connected to the first side of the second radiating element for the second radiating element to be connected between the second metal layer and the third metal layer.

6. The antenna of claim 1, wherein the radiating structure further comprises a third radiating element formed in the third metal layer for inductive feeding by other radiating elements in the radiating structure.

7. The semiconductor-structured antenna of claim 1, wherein the feed structure feeds the first radiating element.

8. The semiconductor structure antenna of claim 1, wherein the semiconductor structure belongs to a package structure of a chip die.

9. A packaged antenna comprising: at least one antenna according to any of claims 1-8.

10. The packaged antenna of claim 9 wherein a plurality of said antennas comprise a transmit antenna array or a receive antenna array; wherein the beam deflections of the plurality of antennas are different.

11. The packaged antenna of claim 9, further comprising: and the plurality of metal posts are positioned on the periphery of the antenna.

12. A radio device, comprising:

the chip bare chip comprises a signal transmitting end and a signal receiving end;

a package structure for packaging the chip die, wherein the package structure comprises the packaged antenna of any of claims 9-11; and a transmitting antenna in the packaging antenna is connected with the signal transmitting end, and a receiving antenna in the packaging antenna is connected with the signal receiving end.

13. The radio device of claim 12, characterized in that the radio device comprises: a radar sensor.

14. An electronic device, comprising:

an equipment body; and

the radio device of claim 13 disposed on the device body.