CN117672923A - Laser bonding-off device and method for warping wafer bonding pair - Google Patents
Laser bonding-off device and method for warping wafer bonding pair Download PDFInfo
- Publication number
- CN117672923A CN117672923A CN202311741904.5A CN202311741904A CN117672923A CN 117672923 A CN117672923 A CN 117672923A CN 202311741904 A CN202311741904 A CN 202311741904A CN 117672923 A CN117672923 A CN 117672923A
- Authority
- CN
- China
- Prior art keywords
- laser
- bonding
- wafer bonding
- wafer
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 18
- 238000006073 displacement reaction Methods 0.000 claims abstract description 27
- 238000001179 sorption measurement Methods 0.000 claims abstract description 13
- 230000000149 penetrating effect Effects 0.000 claims abstract description 3
- 239000003292 glue Substances 0.000 claims description 15
- 230000004044 response Effects 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 238000004100 electronic packaging Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 92
- 238000000926 separation method Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Abstract
The invention discloses a laser de-bonding device for a warp wafer bonding pair, which comprises: an objective table; the objective table is provided with a plurality of through holes; a displacement control system for controlling the displacement of the stage in the vertical direction and the horizontal direction; a vacuum adsorption system; the vacuum adsorption system comprises a vacuum pump, an air suction pipe and a cover plate; the vacuum pump is communicated with the through hole through the air suction pipe; the cover plate is provided with a through hole for accommodating the wafer bonding pair; the wafer bonding pair is adsorbed on the objective table by the suction force generated by the vacuum adsorption system through the through hole; and the laser system is used for generating a laser beam which is focused on the bonding layer of the wafer bonding pair after penetrating through the cover plate and controlling the scanning of the focal point of the laser beam on the bonding layer. The laser bonding-releasing device provided by the invention not only can realize automatic separation for the bonding pair of the warping wafers, but also has the advantages of simplicity in operation, high efficiency, low cost, controllability and the like.
Description
Technical Field
The invention relates to the technical field of wafer level packaging and the technical field of laser processing, in particular to a laser bonding-unlocking device and a laser bonding-unlocking method for a warp wafer bonding pair.
Background
With the relaxation of moore's law, the demand for high-end consumer electronics has driven the development of high-end chips toward miniaturization, thinness, and low cost. Based on this, advanced packaging technologies such as 2.5/3D packaging, fan-out wafer level packaging, stacked packaging technology, etc., improve chip performance by reducing package size. In order to meet the demand for ultra thin wafers (less than 100 μm) and Wafer Level Packaging (WLP), laser debonding techniques have been proposed in the semiconductor field. However, wafer bonding pairs are susceptible to high temperature and chemical attack during the backside thinning process, and device wafers exhibit different stresses than carrier wafers, such that wafer bonding pairs exhibit different degrees of bending or warping due to coefficient of thermal expansion mismatch. Meanwhile, due to the restriction of laser bonding equipment, too large warpage of wafer bonding pair can cause that laser beams cannot be ablated on the same focal plane, so that ablation is uneven, and the difficulty of stripping an ultrathin device is increased. Therefore, how to provide a method for adjusting warpage by wafer bonding and a laser bonding method is important to solve the above problems in the prior art.
Disclosure of Invention
Aiming at the technical problems, the invention provides the laser bonding-unlocking device and the laser bonding-unlocking method for the warping wafer bonding pair, which not only can realize the automatic separation of the wafer bonding pair, but also have the advantages of simple operation, high efficiency, low cost, controllability and the like.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
in one aspect, the present invention provides a laser debonding apparatus for a warp wafer bonding pair, comprising:
an objective table; the objective table is provided with a plurality of through holes;
a displacement control system for controlling the displacement of the stage in the vertical direction and the horizontal direction;
a vacuum adsorption system; the vacuum adsorption system comprises a vacuum pump, an air suction pipe and a cover plate; the vacuum pump is communicated with the through hole through an air suction pipe; the cover plate is provided with a through hole for accommodating the wafer bonding pair; the suction force generated by the vacuum adsorption system adsorbs the wafer bonding pair on the objective table through the through hole;
and the laser system is used for generating a laser beam which is focused on the bonding layer of the wafer bonding pair after penetrating through the cover plate and controlling the scanning of the focal point of the laser beam on the bonding layer.
As a preferred embodiment, the aperture of the through hole is smaller than the size of the wafer bonding pair;
preferably, the thickness of the cover plate is greater than the thickness of the wafer bonding pair;
preferably, the size of the through hole is adapted to the size of the wafer bonding pair.
In some embodiments, the cover plate is made of at least one material selected from the group consisting of polymer, metal and glass.
As a preferred embodiment, the displacement control system includes an X displacement unit, a Y displacement unit, and a Z displacement unit;
preferably, the X displacement unit, the Y displacement unit and the Z displacement unit are rockers disposed on the stage.
As a preferred embodiment, the laser system comprises a laser emitting unit, a reflecting mirror, a beam shaper, a galvanometer and a field lens which are arranged in sequence; the laser emission unit comprises a laser and a beam expander which are sequentially arranged;
preferably, the beam shaper adjusts the laser beam into a linear light spot, a square light spot or a circular light spot;
preferably, the focal length of the field lens is more than or equal to 300mm; in the technical scheme of the invention, the field lens is longer, so that the focal depth length can be increased;
preferably, the diameter of a light spot of the laser beam generated by the laser, which is incident to the field lens through the beam expander, is 3-10 mm; in the technical scheme of the invention, the larger focal length field lens and the diameter of the light spot of the incident laser beam are matched, so that the bonding layer of the warp key and the wafer pair is always positioned in the focal depth range;
preferably, the distance between the focal plane of the focused laser beam generated by the laser system and the bonding layer is less than or equal to 2mm;
preferably, the single pulse energy density of the light spot of the focused laser beam generated by the laser system on the bonding layer is more than or equal to 100mJ/cm 2 ；
In the technical scheme of the invention, the field lens and the galvanometer are matched for use, so that the controllable movement of the laser beam can be realized; the longer focal length of the field lens can enlarge the processing breadth;
preferably, the wavelength band of the laser beam is selected from any one of UV, visible light and infrared light;
preferably, the pulse width of the laser beam is selected from any one of nanoseconds, picoseconds and femtoseconds.
As a preferred implementation manner, the wafer bonding is obtained by carrying out hot-press bonding on a bearing wafer coated with photosensitive response glue and a device wafer coated with bonding glue; wherein, the photosensitive response glue and the bonding glue are used as bonding surfaces to form a bonding layer;
preferably, the absorptivity of the photosensitive response adhesive to the laser is more than or equal to 80%.
In the technical scheme of the invention, the warping degree of the warping wafer bonding pair is less than or equal to 2.5mm.
In yet another aspect, the present invention provides a laser debonding method implemented using the above device, comprising the steps of:
(1) Placing the wafer bonding and the cover plate to be unbonded on the objective table, wherein the wafer bonding is arranged in the through hole of the cover plate, and the through hole on the objective table is covered by the cover plate and the wafer bonding pair;
(2) Starting a vacuum pump, and adsorbing the wafer bonding pair and the cover plate on the objective table by negative pressure generated by vacuum suction;
(3) And carrying out focusing scanning on the bonding layer of the wafer bonding pair through a laser system.
In a further aspect, the invention provides the use of the above method or apparatus in electronic packaging, preferably in device wafer debonding.
The technical scheme has the following advantages or beneficial effects:
the invention provides a laser bonding-off device and a laser bonding-off method for a warped wafer bonding pair, which are characterized in that the device reasonably designs a long-focus field lens and the diameter of an incident laser beam based on the focal depth length so as to increase the focal depth length of a focused laser beam, so that a bonding layer of the warped wafer bonding pair is always in the focal depth range of laser, the size of a light spot irradiated on the bonding layer in the laser bonding-off process is kept consistent with the energy distribution, the automatic separation of the wafer bonding pair can be realized, and the device has the advantages of simplicity in operation, high efficiency, low cost, controllability and the like.
Compared with the prior art, the invention has the following advantages:
(1) The vacuum adsorption system provided by the invention adsorbs the wafer bonding pair on the objective table through vacuum suction, so that the relative deformation difference of the wafer bonding pair is eliminated to a certain extent;
(2) The focal depth length of the focused laser beam is increased through the long-focal-length field lens and the proper spot diameter of the incident laser beam, so that the bonding layer of the warped wafer bonding pair is always in the focal depth range, and the spot size and the energy distribution of the bonding layer in the laser bonding process are basically consistent;
(3) The invention adopts the field lens with longer focal length, which is beneficial to improving the laser processing breadth so as to adapt to advanced large-size wafer level packaging, thereby improving the productivity, reducing the production cost of chips and improving the processing efficiency.
Drawings
Fig. 1 is a schematic structural view of a laser debonding apparatus for warp wafer bonding pairs in embodiment 1 of the present invention.
FIG. 2 is a flow chart of the preparation of ultra-thin chips in example 2 of the present invention.
Fig. 3 is a diagram showing the optical path of the focal length of the field lens and the diameter of the incident laser beam in embodiment 1 of the present invention.
Fig. 4 is a physical diagram of the wafer bonding pair prepared in step S1 of example 2 of the present invention.
Fig. 5 is a physical diagram of the device wafer and the carrier wafer separated in step S2 of embodiment 2 of the present invention.
Detailed Description
The following examples are only some, but not all, of the examples of the invention. Accordingly, the detailed description of the embodiments of the invention provided below is not intended to limit the scope of the invention as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to fall within the scope of the present invention.
In the present invention, all the equipment, raw materials and the like are commercially available or commonly used in the industry unless otherwise specified. The methods in the following examples are conventional in the art unless otherwise specified.
Example 1:
the present embodiment provides a laser debonding apparatus for a warp wafer bonding pair, as shown in fig. 1, including:
group hole 1, adsorption table 2, three-dimensional moving table 3, rocker 4, cover plate 5, vacuum pump 6, suction pipe 7, field lens 8, vibrating lens 9, carrying wafer 21, response material 22, bonding adhesive 23, device wafer 24, wafer bonding pair 25, laser beam 26, device wafer 27 with residual adhesive, device wafer 28 without residual adhesive and damage, ultrathin chip 29
Stage 2: a plurality of through holes 1 are formed;
displacement control system 3: for controlling the displacement of the stage 1 in the vertical direction (Z) and the horizontal direction (X, Y);
vacuum adsorption system: comprises a vacuum pump 6, an air suction pipe 7 and a cover plate 5; the vacuum pump 6 is communicated with the through hole 1 through the air suction pipe 7; the cover plate 5 is provided with a through hole (not marked in the figure) for accommodating the wafer bonding pair; the suction force generated by the vacuum suction system sucks the wafer bonding pair 25 on the objective table 2 through the through hole 1;
a laser system for generating a laser beam focused on the bonding layer of the wafer bonding pair 25 after passing through the cover plate 5 and controlling the scanning of the focal point of the laser beam 26 on the bonding layer.
The laser bonding device provided in this embodiment uses the cover plate and the wafer bonding pair to cover the through holes on the objective table, so that the wafer bonding pair can be adsorbed on the objective table by negative pressure after the vacuum pump is started. The laser system then generates a laser beam to scan the bonding layer of the wafer bonding pair.
In order to enable the wafer bonding pair 25 and the cover plate 5 to fully cover the through hole on the stage, in this embodiment, the aperture of the through hole 1 is smaller than the size of the wafer bonding pair 25, and the thickness of the cover plate 5 is greater than the thickness of the wafer bonding pair 25; the size of the through holes is adapted to the size of the wafer bond pairs 25. When the laser bonding device provided by the embodiment is specifically used, the wafer bonding pair can be placed on the objective table, then the through hole of the cover plate is aligned with the wafer bonding pair and then placed on the objective table, so that the through hole on the complete objective table can be covered by the cover plate and the wafer bonding pair, or the wafer bonding pair can be placed in the through hole, and then the cover plate and the wafer bonding pair are placed on the objective table.
In this embodiment, the material of the cover plate 5 is at least one selected from polymer, metal and glass; the dimension of the cover plate 5 is 500mm multiplied by 500mm, and the thickness is 2-5 mm; suitable wafer bonding pairs are 2-18 inches in size and 0.5-1mm in thickness. In the technical scheme of the invention, the cover plate is made of polymer, metal, glass and the like, and has low manufacturing cost and simple process. For wafers with different sizes, the adsorption of wafer bonding on the objective table can be realized only by replacing cover plates with different through hole diameters, and other operations are not needed.
In this embodiment, the displacement control system 3 includes an X displacement unit, a Y displacement unit, and a Z displacement unit, which are rockers 4 disposed on the stage 2. The laser bonding device provided by the embodiment can control the displacement of the laser bonding device in the horizontal direction and the vertical direction through the rocker 4 arranged on the object stage.
In this embodiment, the laser system includes a laser emitting unit, a reflecting mirror, a beam shaper, a galvanometer 8, and a field lens 9, which are sequentially disposed; the laser emitting unit comprises a laser and a beam expander which are sequentially arranged.
In this embodiment, the beam shaper may adjust the laser beam 26 to a linear spot, a square spot, or a circular spot.
In the embodiment, the focal length of the field lens is more than or equal to 300mm; in the technical scheme of the invention, the field lens is longer, and the focal depth length can be increased.
In the embodiment, the diameter of a light spot of the laser beam generated by the laser, which is incident to the field lens through the beam expander, is 3-10 mm; in the technical scheme of the invention, the larger focal length field lens and the diameter of the light spot of the incident laser beam are matched, so that the bonding layer of the warp key and the wafer pair is always positioned in the focal depth range.
In this embodiment, the distance between the focal plane of the focused laser beam generated by the laser system and the bonding layer is less than or equal to 2mm.
In this embodiment, the single pulse energy density of the spot of the focused laser beam generated by the laser system on the bonding layer is not less than 100mJ/cm 2 。
In the embodiment, the field lens and the vibrating lens are matched for use, so that the controllable movement of the laser beam can be realized; the longer focal length of the field lens can enlarge the processing breadth.
In this embodiment, the wavelength band of the laser light is selected from any one of UV, visible light, and infrared light.
In this embodiment, the pulse width of the laser is selected from any one of nanoseconds, picoseconds, and femtoseconds.
The optical path diagram of the laser system in this embodiment is shown in fig. 3:
rayleigh length Z R : waist spot radius omega of laser beam 0 To increase toThe beam transmission distance at that time is called the rayleigh length; the calculation formula is as follows: z is Z R ＝πω 0 2 Lambda; wherein λ is the wavelength; omega 0 For the beam waist radius, the calculation formula is: omega 0 ＝λf/pi omega; f is the focal length;
depth of focus: the Rayleigh length is 2 times, and the calculation formula is as follows: b=2z R ＝2λf 2 /πω 2 ；
ω (z): defocus amount is Z R Spot radius at time;
it can be seen from the figure that the longer the rayleigh length, the smaller the spot area change of the light beam when ablating the bonding layer, the smaller the energy density change, and the more stable the power density in the coverage area of the spot. In general, the longer the rayleigh length is, the longer the depth of focus is. In the focus, the wafer bonding with serious warp deformation basically keeps consistent plaque ablation area, and slight height change cannot greatly influence laser energy density, so that the requirement of three-dimensional dynamic focusing is avoided.
In the embodiment, the wafer bonding is obtained by performing hot-press bonding on a bearing wafer coated with photosensitive response glue and a device wafer coated with bonding glue; wherein, the photosensitive response glue and the bonding glue are used as bonding surfaces to form a bonding layer.
In the embodiment, the absorptivity of the photosensitive response adhesive to laser is more than or equal to 80%.
In this embodiment, the warp degree of the warp wafer bonding pair is less than or equal to 2.5mm.
Example 2:
the preparation method of the ultrathin chip is shown in fig. 2, and comprises the following steps:
s1, coating photosensitive response glue 22 (Shenzhen signal semiconductor materials Inc., WLP LB 210) on a bearing wafer 21; bonding glue 23 (Shenzhen chemical semiconductor materials Co., ltd., WLP TB 4130) is applied to device wafer 24; performing thermocompression bonding by taking the photosensitive response adhesive 22 and the bonding adhesive 23 as bonding surfaces, and thinning the back of the device wafer 24 and performing the subsequent semiconductor manufacturing process to obtain a wafer bonding pair 25, wherein the warping degree is +/-2 mm; a physical diagram of the wafer bonding pair 25 prepared in this example is shown in fig. 4;
s2, the wafer bonding pair 25 is de-bonded by adopting the de-bonding device in the embodiment 1, a vacuum pump is started firstly, negative pressure generated by vacuum suction adsorbs the wafer bonding pair and a cover plate on the objective table 2, then continuous irradiation of a laser beam 26 is controlled through a vibrating mirror, a bonding layer is de-bonded, a device wafer is separated from a bearing wafer (a physical diagram is shown in FIG. 5, wherein a left diagram is the device wafer, and a right diagram is the bearing wafer), and an ultrathin device wafer 27 with residual glue is obtained; in the de-bonding process, as shown in fig. 3, the optical path of the laser system is shown in the optical path, the focal length f of the field lens 8 is 511mm, the light spot radius w of the laser beam generated by the laser, which is incident to the field lens through the beam expander, is 3mm, and the focal depth length b of the focused laser beam light spot is 6.5mm; under this parameter, the bonding layer of the wafer bonding pair 25 is always within the depth of focus;
s4, transferring the ultrathin device wafer 27 with the residual glue to a cleaning chamber through a transfer disc, and cleaning for 3min through a cleaning agent to obtain an ultrathin device wafer 28 without residual glue and damage;
s5, the ultra-thin chip 29 is manufactured by a semiconductor manufacturing process.
The foregoing is only a preferred embodiment of the invention, it being noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the invention.
Claims (10)
1. A laser debonding apparatus for a warp wafer bonding pair, comprising:
an objective table; the objective table is provided with a plurality of through holes;
a displacement control system for controlling the displacement of the stage in the vertical direction and the horizontal direction;
a vacuum adsorption system; the vacuum adsorption system comprises a vacuum pump, an air suction pipe and a cover plate; the vacuum pump is communicated with the through hole through an air suction pipe; the cover plate is provided with a through hole for accommodating the wafer bonding pair; the suction force generated by the vacuum adsorption system adsorbs the wafer bonding pair on the objective table through the through hole;
and the laser system is used for generating a laser beam which is focused on the bonding layer of the wafer bonding pair after penetrating through the cover plate and controlling the scanning of the focal point of the laser beam on the bonding layer.
2. The laser debonding apparatus of claim 1 wherein the aperture of the through hole is smaller than the size of the wafer bonding pair;
preferably, the thickness of the cover plate is greater than the thickness of the wafer bonding pair;
preferably, the size of the through hole is adapted to the size of the wafer bonding pair.
3. The laser debonding apparatus of claim 1 wherein the displacement control system comprises an X displacement unit, a Y displacement unit, and a Z displacement unit;
preferably, the X displacement unit, the Y displacement unit and the Z displacement unit are rockers disposed on the stage.
4. The laser debonding apparatus of claim 1 wherein the laser system comprises a laser emitting unit, a mirror, a beam shaper, a galvanometer, and a field lens arranged in sequence; the laser emission unit comprises a laser and a beam expander which are sequentially arranged;
preferably, the beam shaper adjusts the laser beam to a linear spot, a square spot or a circular spot.
5. The laser debonding apparatus of claim 4, wherein a focal length of the field lens is greater than or equal to 300mm;
preferably, the diameter of a light spot of the laser beam generated by the laser, which is incident to the field lens through the beam expander, is 3-10 mm;
preferably, the distance between the focal plane of the focused laser beam generated by the laser system and the bonding layer is less than or equal to 2mm;
preferably, the single pulse energy density of the light spot of the focused laser beam generated by the laser system on the bonding layer is more than or equal to 100mJ/cm 2 。
6. The laser debonding apparatus of claim 4 wherein the wavelength band of the laser beam is selected from any one of UV, visible light, and infrared light;
preferably, the pulse width of the laser beam is selected from any one of nanoseconds, picoseconds and femtoseconds.
7. The laser debonding apparatus of claim 1 wherein the wafer bonding is achieved by thermocompression bonding a carrier wafer coated with a photosensitive responsive adhesive and a device wafer coated with a bonding adhesive; wherein, the photosensitive response glue and the bonding glue are used as bonding surfaces to form a bonding layer;
preferably, the absorptivity of the photosensitive response adhesive to the laser is more than or equal to 80%.
8. The laser debonding apparatus of claim 1 wherein the warp of the warped wafer bonding pair is less than or equal to 2.5mm.
9. A method of laser debonding implemented using the apparatus of any of claims 1-8, comprising the steps of:
(1) Placing the wafer bonding and the cover plate to be unbonded on the objective table, wherein the wafer bonding is arranged in the through hole of the cover plate, and the through hole on the objective table is covered by the cover plate and the wafer bonding pair;
(2) Starting a vacuum pump, and adsorbing the wafer bonding pair and the cover plate on the objective table by negative pressure generated by vacuum suction;
(3) And carrying out focusing scanning on the bonding layer of the wafer bonding pair through a laser system.
10. Use of the apparatus of any of claims 1-8 or the method of claim 9 in electronic packaging, preferably in device wafer debonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311741904.5A CN117672923A (en) | 2023-12-18 | 2023-12-18 | Laser bonding-off device and method for warping wafer bonding pair |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311741904.5A CN117672923A (en) | 2023-12-18 | 2023-12-18 | Laser bonding-off device and method for warping wafer bonding pair |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117672923A true CN117672923A (en) | 2024-03-08 |
Family
ID=90082536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311741904.5A Pending CN117672923A (en) | 2023-12-18 | 2023-12-18 | Laser bonding-off device and method for warping wafer bonding pair |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117672923A (en) |
-
2023
- 2023-12-18 CN CN202311741904.5A patent/CN117672923A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7666760B2 (en) | Method of dividing wafer | |
| US7449396B2 (en) | Wafer dividing method | |
| CN103962728A (en) | Laser processing method | |
| JP5995045B2 (en) | Substrate processing method and substrate processing apparatus | |
| CN107529467A (en) | Silicon-based MEMS wafer multi-focus laser cutting system and cutting method | |
| JP6523882B2 (en) | Wafer processing method | |
| JP2005277136A (en) | Method and apparatus of manufacturing substrate | |
| WO2019114466A1 (en) | Display product fabrication method and laser processing device | |
| JP6175470B2 (en) | Laser dicing apparatus and method | |
| JPS6239539B2 (en) | ||
| CN104203485B (en) | Ultrafast laser is used to manufacture equipment and the method for micro-breach at the edge line part place of stitch marker | |
| JP2010087041A (en) | Method of removing thin film by laser beam, and method of manufacturing thin-film solar cell panel | |
| JP2012248704A (en) | Laser dicing device and method | |
| CN106409733A (en) | Laser annealing device and method | |
| CN117672923A (en) | Laser bonding-off device and method for warping wafer bonding pair | |
| KR20220158024A (en) | Substrate processing method and substrate processing apparatus | |
| TWI687559B (en) | Substrate manufacturing method | |
| JP2003071585A (en) | Laser beam machining device | |
| TWI812785B (en) | Diamond Substrate Formation Method | |
| JP2013219115A (en) | Method for dividing wafer | |
| CN108346597B (en) | Vacuum heating system, wafer stripping device and method | |
| JP2006024782A (en) | Substrate manufacturing method and apparatus | |
| JP6735372B2 (en) | Laser dicing device | |
| US20230030317A1 (en) | Wafer dividing method | |
| JP6483204B2 (en) | Laser dicing apparatus and method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |