CN117666023A - Microlens integrated structure and manufacturing method thereof - Google Patents
Microlens integrated structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN117666023A CN117666023A CN202211022266.7A CN202211022266A CN117666023A CN 117666023 A CN117666023 A CN 117666023A CN 202211022266 A CN202211022266 A CN 202211022266A CN 117666023 A CN117666023 A CN 117666023A
- Authority
- CN
- China
- Prior art keywords
- substrate
- microlens
- area
- photoresist
- micro lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 238000005530 etching Methods 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000003153 chemical reaction reagent Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000008878 coupling Effects 0.000 abstract description 4
- 238000010168 coupling process Methods 0.000 abstract description 4
- 238000005859 coupling reaction Methods 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 35
- 229910052710 silicon Inorganic materials 0.000 description 35
- 239000010703 silicon Substances 0.000 description 35
- 230000003287 optical effect Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
The invention discloses a microlens integrated structure and a manufacturing method thereof. The microlens integrated structure comprises a substrate, at least one microlens and at least two supporting blocks; the micro lenses and the supporting blocks are distributed on the surface of the substrate and are integrally arranged with the substrate; at least one supporting block is arranged on two sides of one micro lens respectively, and the top end of the supporting block is higher than the top end of the micro lens. The micro lens and the supporting block are integrated on one device, and the device is formed at one time through the semiconductor etching process, so that the height and position precision of the device can be ensured, and the coupling light power loss caused by the mounting process is reduced.
Description
Technical Field
The invention belongs to the technical field of semiconductor chip manufacturing, and particularly relates to a microlens integrated structure and a manufacturing method thereof.
Background
The silicon micro-lens is applied to the field of optical communication, when the product is used in an optical communication module, a square cushion block is generally used as a supporting block, the micro-lens is attached to the square cushion block, and the position accuracy deviation and the attaching height of the attaching process can greatly influence the coupling optical power of the product.
Disclosure of Invention
The invention mainly aims to provide a microlens integrated structure and a manufacturing method thereof, which are used for overcoming the defects in the prior art.
In order to achieve the above object, the technical solution adopted in the embodiment of the present invention includes:
the embodiment of the invention provides a microlens integrated structure, which comprises a substrate, at least one microlens and at least two supporting blocks; the micro lenses and the supporting blocks are distributed on the surface of the substrate and are integrally arranged with the substrate; at least one supporting block is arranged on two sides of one micro lens respectively, and the top end of the supporting block is higher than the top end of the micro lens.
Further, the microlens integrated structure comprises more than one microlens group, the microlens group comprises a plurality of microlenses, and at least one supporting block is respectively arranged on two sides of one microlens group.
Further, the microlenses are hemispheric.
The embodiment of the invention also provides a manufacturing method of the microlens integrated structure, which comprises the following steps:
s1, providing a substrate, and defining a first area and a second area on the surface of the substrate, wherein the first area is used for arranging at least two supporting blocks, and the second area is used for arranging at least one micro lens, and at least one supporting block is respectively arranged on two sides of one micro lens;
s2, setting a metal mask in a first area of the surface of the substrate;
s3, coating a photoresist layer on the surface of the substrate, and then exposing and developing the photoresist layer to remove the photoresist layer which is not distributed on the second area;
s4, forming a photoresist ball on the photoresist layer remained on the second area through a photoresist hot melting method;
s5, etching the rubber ball and the surface of the substrate, wherein the etching speed of the etching reagent on the metal mask is smaller than that of the etching reagent on the rubber ball, and the ratio of the etching speed of the etching reagent on the rubber ball to that of the etching reagent on the substrate material is 0.9-1.1:1, so that after the rubber ball is completely etched, the graph of the rubber ball is completely transferred to the substrate, and the micro lens is formed in a second area of the surface of the substrate;
and S6, removing the metal mask, so that the supporting block is formed in the first area of the surface of the substrate.
Further, in step S2, the thickness of the metal mask is 3-4 μm.
Further, in step S3, the thickness of the photoresist layer may be calculated by the formulaAnd calculating, wherein h is the thickness of the photoresist layer, R is the radius of curvature of the prepared rubber ball, and D is the bottom diameter of the prepared rubber ball.
Further, in step S4, the heating temperature of the photoresist hot melting method is 150-200 ℃ and the heating time is 10-20 min.
Compared with the prior art, the invention has the following beneficial effects:
the micro lens and the supporting block are integrated on one device, and the device is formed at one time through the semiconductor etching process, so that the height and position precision of the device can be ensured, and the coupling light power loss caused by the mounting process is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural view of a microlens integrated structure in embodiment 1 of the present application.
Fig. 2 to 10 are schematic views of a manufacturing process of the microlens integrated structure.
Fig. 11 is a schematic structural view of a microlens integrated structure in embodiment 2 of the present application.
Reference numerals illustrate: 1. the micro-lens array comprises a silicon substrate, a micro-lens, a supporting block, photoresist, a first photoresist boss, a metal mask, a second photoresist boss, a heating disc and a rubber ball.
Detailed Description
In view of the shortcomings of the prior art, the inventor of the present invention has long studied and put forward a great deal of practice, and the technical scheme of the present invention is mainly that a microlens and a supporting block are integrated into a whole, and a device is formed at one time through a semiconductor etching process. The technical scheme, the implementation process and the principle thereof are further explained as follows.
An aspect of an embodiment of the present invention provides a microlens integrated structure, including a substrate, at least one microlens, and at least two supporting blocks; the micro lenses and the supporting blocks are distributed on the surface of the substrate and are integrally arranged with the substrate; at least one supporting block is arranged on two sides of one micro lens respectively, and the top end of the supporting block is higher than the top end of the micro lens.
In some preferred embodiments, the microlens integrated structure includes more than one microlens group, the microlens group includes a plurality of microlenses, and at least one supporting block is respectively disposed on two sides of one microlens group.
In some preferred embodiments, the microlenses are hemispherical.
In some preferred embodiments, the substrate is a silicon substrate.
The embodiment of the invention also provides a manufacturing method of the microlens integrated structure, which comprises the following steps:
s1, providing a substrate, and defining a first area and a second area on the surface of the substrate, wherein the first area is used for arranging at least two supporting blocks, and the second area is used for arranging at least one micro lens, and at least one supporting block is respectively arranged on two sides of one micro lens;
s2, setting a metal mask in a first area of the surface of the substrate;
s3, coating a photoresist layer on the surface of the substrate, and then exposing and developing the photoresist layer to remove the photoresist layer which is not distributed on the second area;
s4, forming a photoresist ball on the photoresist layer remained on the second area through a photoresist hot melting method;
s5, etching the rubber ball and the surface of the substrate, wherein the etching speed of the etching reagent on the metal mask is smaller than that of the etching reagent on the rubber ball, and the ratio of the etching speed of the etching reagent on the rubber ball to that of the etching reagent on the substrate material is 0.9-1.1:1, so that after the rubber ball is completely etched, the graph of the rubber ball is completely transferred to the substrate, and the micro lens is formed in a second area of the surface of the substrate;
and S6, removing the metal mask, so that the supporting block is formed in the first area of the surface of the substrate.
In some preferred embodiments, in step S2, the metal mask has a thickness of 3-4 μm.
In some preferred embodiments, in step S3, the thickness of the photoresist layer may be calculated by the formulaAnd calculating, wherein h is the thickness of the photoresist layer, R is the radius of curvature of the prepared rubber ball, and D is the bottom diameter of the prepared rubber ball.
In some preferred embodiments, in step S4, the heating temperature of the photoresist hot melting method is 150-200 ℃ and the heating time is 10-20 min.
According to the embodiment of the invention, the micro lens and the supporting block are integrated on one device, and the device is formed at one time through a semiconductor etching process, so that the height and position accuracy of the device can be ensured, and the coupling light power loss caused by a mounting process is reduced.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention briefly described above will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings.
Example 1
The embodiment of the invention provides a microlens integrated structure, as shown in fig. 1, which comprises a silicon substrate 1, a microlens group and two supporting blocks 3, wherein in the embodiment, the microlens group comprises two microlenses 2, and two sides of the microlens group are respectively provided with one supporting block 3; the micro lenses 2 and the supporting blocks 3 are distributed on the surface of the silicon substrate 1 and are integrally arranged with the silicon substrate 1; wherein, the top of the supporting block 3 is higher than the top of the micro lens 2, and the supporting block 3 is spaced from the edge of the silicon substrate 1.
The microlens integrated structure of the embodiment is specifically prepared by the following steps:
step 1: as shown in fig. 2, a photoresist 4 with a thickness of 3-5um is uniformly coated on the surface of a silicon substrate 1 by using a photoresist homogenizer;
step 2: as shown in fig. 3, the silicon substrate 1 coated with the photoresist 4 is subjected to exposure treatment using a photolithography machine, the exposed silicon substrate 1 is placed in a developing solution, the area of the silicon substrate 1 irradiated with UV light is dissolved in the developing solution to expose the underlying substrate, the area of the silicon substrate 1 not irradiated with UV light is exposed, and the photoresist 4 remains to form first photoresist bosses 5 at the middle and both side edges of the surface of the silicon substrate 1; the first photoresist bosses 5 in the middle are defined as second regions, and the regions between the first photoresist bosses 5 are defined as first regions;
step 3: after development, as shown in fig. 4, metal Cr is deposited on the surfaces of the first photoresist boss 5 and the silicon substrate 1 by using a magnetron sputtering device, then metal is removed from the surfaces of the first photoresist boss 5 and the silicon substrate 1 by a metal stripping process, the metal in direct contact with the silicon substrate 1 is retained, and a metal mask 6 with a thickness of 3-4 μm is formed in the first region;
step 4: as shown in FIG. 5, a photoresist 4 capable of wrapping a metal mask 6 and having a thickness of 15 μm is uniformly coated on the surface of a silicon substrate 1, and the thickness is calculated by the formulaCalculated, wherein h is the thickness of the photoresist layer, R is the radius of curvature of the prepared rubber ball, and D is the bottom diameter of the prepared rubber ball;
step 5: as shown in fig. 6, the silicon substrate 1 coated with the photoresist 4 is subjected to exposure treatment using a photolithography machine, the exposed silicon substrate 1 is placed in a developing solution, the area of the silicon substrate 1 irradiated with UV light is exposed, the photoresist 4 is dissolved in the developing solution to expose the underlying substrate, the area of the silicon substrate 1 not irradiated with UV light is exposed, and a second photoresist boss 7 is formed in the second area;
step 6: placing the silicon substrate 1 with the second photoresist bosses 7 formed on a heating plate 8 at a heating temperature of 150-200 ℃ for 10-20 min as shown in fig. 7, and forming the second photoresist bosses 7 into rubber balls 9 by a photoresist hot melting method as shown in fig. 8;
step 7: as shown in fig. 9 and 10, the prepared silicon substrate 1 is put into a dry etching device, the ratio of the etching speed of the silicon substrate 1 to the etching speed of the photoresist 4 is required to be 0.9-1.1:1, the etching speed of the metal material in the etching environment is far lower than that of the silicon substrate, after the glue ball 9 is completely etched, the pattern of the metal material is completely transferred to the silicon substrate 1, the metal layer coverage areas on two sides of the glue ball 9 are protected by a metal mask 6, the silicon substrate 1 is not etched, so that a raised supporting block 3 is formed, and the rest metal layer is removed through a chemical chromium etching liquid, so that a micro lens 2 with the height lower than that of the supporting block 3 is formed.
Example 2
The embodiment of the invention provides a microlens integrated structure, as shown in fig. 11, which comprises a silicon substrate 1, a microlens group and two supporting blocks 3, wherein in the embodiment, the microlens group comprises two microlenses 2, and two sides of the microlens group are respectively provided with one supporting block 3; the micro lenses 2 and the supporting blocks 3 are distributed on the surface of the silicon substrate 1 and are integrally arranged with the silicon substrate 1; wherein the top of the supporting block 3 is higher than the top of the micro lens 2, and the supporting block 3 is arranged at the edge of the surface of the silicon substrate 1.
The manufacturing method of the microlens integrated structure of the present embodiment is basically the same as that of the microlens integrated structure of embodiment 1, and the difference is that step 2 specifically includes: using a photoetching machine to expose the silicon substrate 1 coated with the photoresist 4, placing the exposed silicon substrate 1 into a developing solution, dissolving the photoresist 4 in the developing solution to expose the underlying substrate, exposing the area of the silicon substrate 1 not irradiated with UV light, and keeping the photoresist 4 to form a first photoresist boss 5 in the middle of the surface of the silicon substrate 1; the first photoresist pattern 5 is defined as a second region, and regions on both sides of the first photoresist pattern 5 are defined as first regions.
In addition, the inventors have conducted experiments with other materials, process operations, and process conditions as described in this specification with reference to the foregoing examples, and have all obtained desirable results.
While the invention has been described with reference to an illustrative embodiment, it will be understood by those skilled in the art that various other changes, omissions and/or additions may be made and substantial equivalents may be substituted for elements thereof without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed for carrying out this invention, but that the invention will include all embodiments falling within the scope of the appended claims. Moreover, unless specifically stated any use of the terms first, second, etc. do not denote any order or importance, but rather the terms first, second, etc. are used to distinguish one element from another.
Claims (7)
1. The microlens integrated structure is characterized by comprising a substrate, at least one microlens and at least two supporting blocks; the micro lenses and the supporting blocks are distributed on the surface of the substrate and are integrally arranged with the substrate; at least one supporting block is arranged on two sides of one micro lens respectively, and the top end of the supporting block is higher than the top end of the micro lens.
2. The microlens integrated structure according to claim 1, comprising more than one microlens group, wherein the microlens group comprises a plurality of the microlenses, and at least one of the support blocks is provided on both sides of one microlens group.
3. The microlens integrated structure according to claim 1 or 2, characterized in that: the micro lens is hemispherical.
4. A method of making a microlens assembly structure of any one of claims 1-3, comprising:
s1, providing a substrate, and defining a first area and a second area on the surface of the substrate, wherein the first area is used for arranging at least two supporting blocks, and the second area is used for arranging at least one micro lens, and at least one supporting block is respectively arranged on two sides of one micro lens;
s2, setting a metal mask in a first area of the surface of the substrate;
s3, coating a photoresist layer on the surface of the substrate, and then exposing and developing the photoresist layer to remove the photoresist layer which is not distributed on the second area;
s4, forming a photoresist ball on the photoresist layer remained on the second area through a photoresist hot melting method;
s5, etching the rubber ball and the surface of the substrate, wherein the etching speed of the etching reagent on the metal mask is smaller than that of the etching reagent on the rubber ball, and the ratio of the etching speed of the etching reagent on the rubber ball to that of the etching reagent on the substrate material is 0.9-1.1:1, so that after the rubber ball is completely etched, the graph of the rubber ball is completely transferred to the substrate, and the micro lens is formed in a second area of the surface of the substrate;
and S6, removing the metal mask, so that the supporting block is formed in the first area of the surface of the substrate.
5. The method of manufacturing a microlens assembly structure of claim 4, wherein: in step S2, the thickness of the metal mask is 3-4 μm.
6. The method for fabricating a microlens assembly structure according to claim 4, which comprisesIs characterized in that: in step S3, the thickness of the photoresist layer may be calculated by the formulaAnd calculating, wherein h is the thickness of the photoresist layer, R is the radius of curvature of the prepared rubber ball, and D is the bottom diameter of the prepared rubber ball.
7. The method of manufacturing a microlens assembly structure of claim 4, wherein: in the step S4, the heating temperature of the photoresist hot melting method is 150-200 ℃ and the heating time is 10-20 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211022266.7A CN117666023A (en) | 2022-08-24 | 2022-08-24 | Microlens integrated structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211022266.7A CN117666023A (en) | 2022-08-24 | 2022-08-24 | Microlens integrated structure and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117666023A true CN117666023A (en) | 2024-03-08 |
Family
ID=90066702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211022266.7A Pending CN117666023A (en) | 2022-08-24 | 2022-08-24 | Microlens integrated structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117666023A (en) |
-
2022
- 2022-08-24 CN CN202211022266.7A patent/CN117666023A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6794218B2 (en) | Glass attachment over micro-lens arrays | |
| US9502461B2 (en) | Methods of fabricating camera module and spacer of a lens structure in the camera module | |
| US6524772B1 (en) | Method of manufacturing phase grating image sensor | |
| US5286605A (en) | Method for producing solid-state imaging device | |
| US8048768B2 (en) | Joined wafer, fabrication method thereof, and fabrication method of semiconductor devices | |
| KR100541027B1 (en) | Image sensor, fabrication method of an image sensor and mold for fabricating a micro condenser element array used in the same | |
| US7391576B2 (en) | Manufacturing of optical units for semiconductor packages with optical sensors | |
| JPH0412568A (en) | Manufacture of solid-state image pickup device | |
| CN117666023A (en) | Microlens integrated structure and manufacturing method thereof | |
| JP2003139920A (en) | Method of manufacturing microlens | |
| CN210804466U (en) | Optical module | |
| CN115421230A (en) | Integrated micro lens with supporting structure and preparation method thereof | |
| CN112630873A (en) | Double-sided micro-lens array and preparation method thereof | |
| JPH1148354A (en) | Method for working microlens | |
| CN110969148A (en) | Optical module and preparation method thereof | |
| CN102646576A (en) | Method for fabricating semiconductor devices with fine patterns | |
| US20200301048A1 (en) | Optical elements having gradient optical properties | |
| JP2011248306A (en) | Manufacturing method of stepwise and lens-shaped resist structure | |
| KR20200059061A (en) | Pellicle of extreme ultraviolet lithography and method of fabricating the same | |
| JP2006126243A (en) | Exposure mask, microlens array and manufacturing method therefor | |
| JPH07104106A (en) | Production of aspherical microlens array | |
| CN116224476B (en) | Microlens array and method for manufacturing same | |
| CN112034541B (en) | Method and system for preparing silicon microlens product by photoresist hot melting method | |
| JP2005134690A (en) | Optical element manufacturing method | |
| JP4296779B2 (en) | Optical element manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |