CN117650711A - Mixed three-level superimposed mixed bridge arm active neutral point clamped converter and modulation method thereof - Google Patents
Mixed three-level superimposed mixed bridge arm active neutral point clamped converter and modulation method thereof Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 153
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 151
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 71
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 70
- 230000005669 field effect Effects 0.000 claims description 28
- 229910044991 metal oxide Inorganic materials 0.000 claims description 28
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- 230000000295 complement effect Effects 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 claims description 7
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Abstract
The invention discloses a hybrid three-level superposition hybrid bridge arm active neutral point clamped converter, which comprises: the three phase circuits are connected in parallel, each phase circuit comprises a power frequency silicon-based bridge arm and a low-frequency silicon-based bridge arm, the low-frequency silicon-based bridge arm is connected with a silicon-based bridge arm filter inductor, the silicon-based bridge arm filter inductor is connected with an alternating current side output terminal, and a modulation method of the hybrid three-level superposition hybrid bridge arm active neutral point clamped converter is designed to control different states of a switch. The invention aims to solve the problems that the silicon diode of the existing hybrid active neutral point clamped converter introduces extra reverse recovery loss, the switching loss of a silicon device is large, the advantages of a wide forbidden band device cannot be fully exerted, the power density and the efficiency cannot be further improved, the silicon carbide device is fewer in use and lower in cost, the switching loss is fewer, the electric energy quality is better under the equivalent switching frequency, and the size of a filter is smaller.
Description
Technical Field
The invention belongs to the technical field of power electronics, and particularly relates to a hybrid three-level superposition hybrid bridge arm active neutral point clamped converter and a modulation method thereof.
Background
In the field of power electronics high power, silicon-based power converters typically employ a multi-level circuit topology in order to accommodate higher voltages and power levels. However, as silicon device characteristics approach their theoretical limits, the power density of silicon device-based multilevel converters has been difficult to continue to increase. In recent years, the development of wide bandgap devices represented by silicon carbide is mature, and the wide bandgap devices have the advantages of higher breakdown field strength, higher saturated electron drift rate, higher thermal conductivity and the like, and are particularly suitable for high-power and high-density application occasions. Meanwhile, since the cost of the wide bandgap device increases rapidly with the voltage withstand, the price of the silicon carbide mosfet is approximately 5 times that of the silicon-on-insulator bipolar transistor in a small current interval, and 8 times that of the silicon carbide mosfet in a large current interval, the price gap is very obvious in high power applications. Therefore, the silicon device and the wide bandgap device and other heterogeneous power devices are combined and used in a topological level, the capacity and cost advantages of the silicon device and the low loss and speed advantages of the wide bandgap device are fully exerted, and the optimization of power density and cost is realized, which is a hot research direction in the current academia and industry.
The topology level combination mode of the existing heterogeneous power device is still quite limited. First, most applications are still based on simple two-level circuit topologies, using a hybrid switching technology of silicon carbide schottky diodes plus silicon insulated gate bipolar transistors. Although the scheme has a simple circuit structure and extremely low reverse recovery loss, the scheme still has considerable switching loss under the working condition of high power and high bus voltage. And the filter of this scheme is too bulky, which is disadvantageous for further improvement of the power density. On the other hand, the combined use in multi-level circuits is also mostly based on the combination of silicon-on-insulator bipolar transistors and silicon carbide schottky diodes. The switching loss of the silicon device is still quite obvious in the scheme, and the further improvement of the power density is not facilitated.
In order to reduce the switching loss of a silicon device, a three-level active neutral point clamped converter mixed by silicon and silicon carbide is proposed in the literature of D.Woldegiorgis, Y.Wu, Y.Wei and H.A. Mantooth, "A High Efficiency and Low Cost ANPC Inverter Using Hybrid Si/SiC Switches," in IEEE Open Journal of Industry Applications, vol.2 and pp.154-167,2021.
Disclosure of Invention
The invention aims to solve the problems that the advantages of a wide forbidden band device can not be fully exerted and the power density and the efficiency can not be further improved due to the fact that extra reverse recovery loss is introduced into a silicon diode of the traditional hybrid active neutral point clamped converter and the switching loss of a silicon device is large, and provides a hybrid three-level superposition hybrid bridge arm active neutral point clamped converter and a modulation method thereof.
In order to achieve the above object, the present invention provides the following technical solutions: a hybrid three-level stacked hybrid bridge arm active neutral point clamped converter comprising: the three phase circuits are connected in parallel, each phase circuit comprises a power frequency silicon-based bridge arm and a low-frequency silicon-based bridge arm, the low-frequency silicon-based bridge arm is connected with a silicon-based bridge arm filter inductor, and the silicon-based bridge arm filter inductor is connected with an alternating current side output terminal.
Preferably, the three phase circuits share two dc bus capacitors, and the two dc bus capacitors are connected in series.
Preferably, the low-frequency silicon-based bridge arm is connected with a high-frequency silicon carbide-based bridge arm in parallel, the high-frequency silicon carbide-based bridge arm is connected with a silicon carbide-based bridge arm filter inductor, and the other side of the silicon carbide-based bridge arm filter inductor is connected with an alternating current side output terminal.
Preferably, the power frequency silicon-based bridge arm and the low frequency silicon-based bridge arm use insulated gate bipolar transistors, and the high frequency silicon carbide-based bridge arm uses metal oxide semiconductor field effect transistors.
Preferably, the insulated gate bipolar transistor Q of the industrial frequency silicon-based bridge arm 1x 、Q 6x A group of signals are shared by the gates of the power frequency silicon-based bridge arm insulated gate bipolar transistor Q 5x 、Q 4x A set of signals is shared by the gates of (a).
Preferably, the insulated gate bipolar transistor Q of the industrial frequency silicon-based bridge arm 1x 、Q 6x Insulated gate bipolar transistor Q of gate signal and power frequency silicon-based bridge arm 5x 、Q 4x Gate signal complementary, insulated gate bipolar transistor Q of low frequency silicon-based bridge arm 2x 、Q 3x Is complementary to the gate signal of (c).
Preferably, the metal oxide semiconductor field effect transistor Q of the high frequency silicon carbide based bridge arm 7x 、Q 8x Is complementary to the gate signal of (a).
A modulation method of a hybrid three-level superposition hybrid bridge arm active neutral point clamped converter comprises the following steps:
s1: measuring a silicon-based bridge arm reference voltage, and judging the switching state of an insulated gate bipolar transistor in the power frequency silicon-based bridge arm according to the silicon-based bridge arm reference voltage;
s2: measuring the silicon-based bridge arm carrier voltage, and judging the magnitude relation between the silicon-based bridge arm carrier voltage and the silicon-based bridge arm reference voltage;
s3: judging the switching state of the insulated gate bipolar transistor in the low-frequency silicon-based bridge arm according to the magnitude relation between the carrier voltage of the silicon-based bridge arm and the reference voltage of the silicon-based bridge arm;
s4: and measuring the reference voltage and the carrier voltage of the high-frequency silicon carbide-based bridge arm, judging the service condition of the metal oxide semiconductor field effect transistor in the high-frequency silicon carbide-based bridge arm according to the magnitude relation, and outputting corresponding levels according to different switch states.
Preferably, the reference voltage and the carrier voltage of the silicon-based bridge arm are shared by the high-frequency silicon-based bridge arm in the step S1 and the low-frequency silicon-based bridge arm in the step S3.
Preferably, in step S4, the switching states are 8 in total.
Compared with the prior art, the invention has the beneficial effects that:
(1) Compared with a full silicon carbide converter, the invention reduces the cost of the converter due to the adoption of the silicon carbide devices with smaller quantity and lower current level.
(2) Compared with an all-silicon converter, the invention reduces the switching loss of a silicon device; meanwhile, the circuit works at a higher equivalent switching frequency, so that better electric energy quality and smaller filter size can be realized.
Drawings
Fig. 1 is a schematic topology of the present invention.
Fig. 2 is a flow chart of the method of the present invention.
FIG. 3 is a schematic diagram of the current compensation of the silicon-based bridge arm filter inductor and the silicon carbide-based bridge arm filter inductor of the present invention.
Detailed Description
Specific embodiments of the invention will be described in detail below with reference to the drawings, in which it is noted that the embodiments described herein are only some embodiments, but not all embodiments of the invention, and the drawings only show some but not all of the matters related to the present patent application, and the scope of the invention is not limited to the following embodiments.
As shown in fig. 1, a hybrid three-level superimposed hybrid bridge arm active neutral point clamped converter includes a positive dc bus power terminal, a negative dc bus power terminal, two dc bus capacitors, an a-th phase circuit, a B-th phase circuit, a C-th phase circuit, and three ac side output terminals, all of which have the same structure and are connected in parallel with each other; each phase circuit comprises a power frequency silicon-based bridge arm, a low-frequency silicon-based bridge arm, a silicon-based bridge arm filter inductor, a high-frequency silicon carbide-based bridge arm and a silicon carbide-based bridge arm filter inductor.
The silicon devices in the converter work at low switching frequency and bear main power, the silicon carbide devices work at high switching frequency and are used for compensating current ripple and bearing secondary power, on one hand, compared with the full silicon carbide converter, the cost of the converter is reduced due to the fact that the silicon carbide devices with smaller quantity and lower current level are adopted; on the other hand, compared with the all-silicon converter, the switching loss of the silicon device is reduced; meanwhile, the circuit works at a higher equivalent switching frequency, so that better electric energy quality and smaller filter size can be realized.
The two direct current bus capacitors C1 and C2 are connected in series, the A-phase circuit, the B-phase circuit and the C-phase circuit share the two direct current bus capacitors, a power frequency silicon-based bridge arm and a low frequency silicon-based bridge arm form a three-level active neutral point clamping circuit structure, one side of a silicon-based bridge arm filter inductor is connected to an alternating current end of the low frequency silicon-based bridge arm for each phase circuit, the other side of the silicon-based bridge arm filter inductor is connected to an alternating current side output terminal, a high frequency silicon-based bridge arm is connected in parallel with the low frequency silicon-based bridge arm, one side of the silicon-based bridge arm filter inductor is connected to a high frequency silicon-based bridge arm alternating current end, and the other side of the silicon-based bridge arm filter inductor is connected to the alternating current side output terminal.
Six insulated gate bipolar transistors are used for the power frequency silicon-based bridge arm and the low frequency silicon-based bridge arm, and two metal oxide semiconductor field effect transistors are used for the high frequency silicon carbide-based bridge arm, wherein the current level of the insulated gate bipolar transistor is greater than that of the metal oxide semiconductor field effect transistor.
For each phase of circuit, in a power frequency silicon-based bridge arm, an insulated gate bipolar transistor Q of the circuit 1x 、Q 6x The gate electrode of the power frequency silicon-based bridge arm shares a group of signals, and correspondingly, the insulated gate bipolar transistor Q of the power frequency silicon-based bridge arm 5x 、Q 4x The gates of (a) also share a set of signals, the two sets of gate signals being complementary, insulated gate bipolar transistor Q 1x 、Q 5x 、Q 6x 、Q 4x The switching frequency of (2) is 50Hz of the power frequency; in the low-frequency silicon-based bridge arm, an insulated gate bipolar transistor Q thereof 2x 、Q 3x The gate signals of the gate electrodes are complementary and the switching frequency is 1-2kHz; in the high-frequency silicon carbide base bridge arm, the metal oxide semiconductor field effect transistor Q 7x 、Q 8x Gate signal complementary to mosfet Q 7x 、Q 8x The switching frequency of (2) is 50-100kHz; wherein x is a, b and c, each representing the A-th phaseA circuit, a B-phase circuit and a C-phase circuit.
The main power is borne by the power frequency silicon-based bridge arm and the low-frequency silicon-based bridge arm, and the high-frequency silicon carbide bridge arm is used for compensating the current ripple of the silicon-based bridge arm and bearing the secondary power.
As shown in fig. 2, the modulation method of the hybrid three-level superposition hybrid bridge arm active neutral point clamped converter includes the steps: s1: measuring the reference voltage of the silicon-based bridge arm, and judging the insulated gate bipolar transistor Q in the power frequency silicon-based bridge arm according to the fact that the reference voltage of the silicon-based bridge arm is larger than zero or smaller than zero at the moment 1x 、Q 6x 、Q 5x 、Q 4x Is a switching state of (a);
s2: measuring the carrier voltage of the silicon-based bridge arm, and judging whether the carrier voltage of the silicon-based bridge arm is larger or smaller than the reference voltage of the silicon-based bridge arm;
s3: judging an insulated gate bipolar transistor Q in a low-frequency silicon-based bridge arm according to the magnitude relation between the carrier voltage of the silicon-based bridge arm and the reference voltage of the silicon-based bridge arm 2x 、Q 3x Is a switching state of (a);
s4: measuring the reference voltage and the carrier voltage of the high-frequency silicon carbide-based bridge arm, and judging the metal oxide semiconductor field effect transistor Q in the high-frequency silicon carbide-based bridge arm according to the two conditions that the reference voltage of the high-frequency silicon carbide-based bridge arm is larger than the carrier voltage and the reference voltage of the high-frequency silicon carbide-based bridge arm is smaller than the carrier voltage 7x 、Q 8x And outputs the corresponding level according to the combination of the switching states of the different transistors.
The power frequency silicon-based bridge arm and the low frequency silicon-based bridge arm share one silicon-based bridge arm reference voltage and one silicon-based bridge arm carrier voltage.
For the silicon-based bridge arm reference voltage, when the silicon-based bridge arm reference voltage is larger than 0, the insulated gate bipolar transistor Q of the power frequency silicon-based bridge arm 1x 、Q 6x Insulated gate bipolar transistor Q of conducting power frequency silicon-based bridge arm 5x 、Q 4x Turning off; when the reference voltage of the silicon-based bridge arm is smaller than 0, the insulated gate bipolar transistor Q of the power frequency silicon-based bridge arm 1x 、Q 6x Insulated gate bipolar transistor Q of power frequency silicon-based bridge arm 5x 、Q 4x Conducting.
Under the classification of considering the different situations of the reference voltage of the silicon-based bridge arm according to the positive and negative values, for the reference voltage of the silicon-based bridge arm, when the reference voltage of the silicon-based bridge arm is larger than the carrier voltage of the silicon-based bridge arm, the insulated gate bipolar transistor Q of the low-frequency silicon-based bridge arm 2x Insulated gate bipolar transistor Q of conducting low-frequency silicon-based bridge arm 3x Turning off; when the reference voltage of the silicon-based bridge arm is smaller than the carrier voltage of the silicon-based bridge arm, the insulated gate bipolar transistor Q of the low-frequency silicon-based bridge arm 2x Insulated gate bipolar transistor Q of low-frequency silicon-based bridge arm 3x Conducting.
After considering different relations between the silicon-based bridge arm reference voltage and the silicon-based bridge arm carrier voltage, for the high-frequency silicon carbide-based bridge arm, when the high-frequency silicon carbide-based bridge arm reference voltage is greater than the high-frequency silicon carbide-based bridge arm carrier voltage, the metal oxide semiconductor field effect transistor Q of the high-frequency silicon carbide-based bridge arm 7x On, metal oxide semiconductor field effect transistor Q of high frequency silicon carbide base bridge arm 8x Turning off; when the reference voltage of the high-frequency silicon carbide-based bridge arm is smaller than the carrier voltage of the high-frequency silicon carbide-based bridge arm, the metal oxide semiconductor field effect transistor Q of the high-frequency silicon carbide-based bridge arm 7x Turn-off, high frequency silicon carbide based bridge arm mosfet Q 8x Conducting.
The reference voltage of the silicon-based bridge arm and the reference voltage of the high-frequency silicon carbide-based bridge arm are both 50Hz sinusoidal voltages, the carrier voltage of the silicon-based bridge arm is 1-2kHz triangular wave voltage, and the carrier voltage of the high-frequency silicon carbide-based bridge arm is 50-100kHz triangular wave voltage.
According to the consistency of the three-phase circuit, the filter inductance value L of the silicon-based bridge arm 1a ＝L 1b ＝L 1c ＝L 1 High-frequency silicon carbide-based bridge arm filter inductance value L 2a ＝L 2b ＝L 2c ＝L 2 。L 1 ＞L 2 And L is 1 /L 2 =k; the voltage of the positive DC bus power terminal and the negative DC bus power terminal is 2U DC . Each phase circuit of the hybrid three-level superposition hybrid bridge arm active neutral point clamped converter has 8 switch states, corresponding to 7 output levels, and switchesThe state table (1 for on, 0 for off) is shown in the following table:
switch state P3: silicon-based insulated gate bipolar transistor Q 1x 、Q 2x 、Q 6x Conduction, silicon-based insulated gate bipolar transistor Q 3x 、Q 5x 、Q 4x Turning off; silicon carbide-based metal oxide semiconductor field effect transistor Q 7x Conductive silicon carbide-based metal oxide semiconductor field effect transistor Q 8x Turning off; the output level is U DC 。
Switch state P2: silicon-based insulated gate bipolar transistor Q 1x 、Q 3x 、Q 6x Conduction, silicon-based insulated gate bipolar transistor Q 2x 、Q 5x 、Q 4x Turning off; silicon carbide-based metal oxide semiconductor field effect transistor Q 7x Conductive silicon carbide-based metal oxide semiconductor field effect transistor Q 8x Turning off; the output level is
Switch state P1: silicon-based insulated gate bipolar transistor Q 1x 、Q 2x 、Q 6x Conduction, silicon-based insulated gate bipolar transistor Q 3x 、Q 5x 、Q 4x Turning off; silicon carbide-based metal oxide semiconductor field effect transistor Q 8x Conductive silicon carbide-based metal oxide semiconductor field effect transistor Q 7x Turning off; the output level is
Switch state O +: silicon-based insulated gate bipolar transistor Q 1x 、Q 3x 、Q 6x Conduction, silicon-based insulated gate bipolar transistor Q 2x 、Q 5x 、Q 4x Turning off; silicon carbide-based metal oxide semiconductor field effect transistor Q 8x Conduction and carbonizationSilicon-based metal oxide semiconductor field effect transistor Q 7x Turning off; output level of 0
Switch state O-: silicon-based insulated gate bipolar transistor Q 2x 、Q 4x 、Q 5x Conduction, silicon-based insulated gate bipolar transistor Q 3x 、Q 1x 、Q 6x Turning off; silicon carbide-based metal oxide semiconductor field effect transistor Q 7x Conductive silicon carbide-based metal oxide semiconductor field effect transistor Q 8x Turning off; output level of 0
Switch state N1: silicon-based insulated gate bipolar transistor Q 3x 、Q 4x 、Q 5x Conduction, silicon-based insulated gate bipolar transistor Q 1x 、Q 2x 、Q 6x Turning off; silicon carbide-based metal oxide semiconductor field effect transistor Q 7x Conductive silicon carbide-based metal oxide semiconductor field effect transistor Q 8x Turning off; the output level is
Switch state N2: silicon-based insulated gate bipolar transistor Q 2x 、Q 4x 、Q 5x Conduction, silicon-based insulated gate bipolar transistor Q 3x 、Q 1x 、Q 6x Turning off; silicon carbide-based metal oxide semiconductor field effect transistor Q 8x Conductive silicon carbide-based metal oxide semiconductor field effect transistor Q 7x Turning off; the output level is
Switch state N3: silicon-based insulated gate bipolar transistor Q 3x 、Q 4x 、Q 5x Conduction, silicon-based insulated gate bipolar transistor Q 1x 、Q 2x 、Q 6x Turning off; silicon carbide-based metal oxide semiconductor field effect transistor Q 8x Conductive silicon carbide-based metal oxide semiconductor field effect transistor Q 7x Turning off; output level of-U DC
As shown in FIG. 3, an A-phase circuit is taken as an exampleTo reduce switching losses, silicon devices operate at very low switching frequencies to afford a main output power; to reduce cost and volume, silicon-based bridge arm filter inductance L 1a Smaller, which results in each switching period T SL A larger current ripple Δi is generated in the circuit a_Si . The silicon carbide device operates at a higher switching frequency to eliminate current ripple generated by the silicon-based bridge arm and to carry a small fraction of the output power.
Current ripple delta i of silicon carbide-based bridge arm filter inductor a_SiC Comprising two parts: the first part is low-frequency ripple which is equal to current ripple delta i of the silicon-based bridge arm filter inductor a_Si The polarities are opposite, so that complete ripple cancellation can be realized; the second is the high frequency ripple, which directly determines the ripple of the total current. Period of total current ripple and switching period T of high-frequency silicon carbide-based bridge arm SH Equal. In the drawing the view of the figure,for the average value of the silicon-based bridge arm filter inductance current, < >>For the average value of the filter inductance current of the silicon carbide-based bridge arm, < >>Mean value of total current
While the foregoing has been directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (10)
1. A hybrid three-level stacked hybrid bridge arm active neutral point clamped converter, comprising: the three phase circuits are connected in parallel, each phase circuit comprises a power frequency silicon-based bridge arm and a low-frequency silicon-based bridge arm, the low-frequency silicon-based bridge arm is connected with a silicon-based bridge arm filter inductor, and the silicon-based bridge arm filter inductor is connected with an alternating current side output terminal.
2. The hybrid three-level stacked hybrid bridge arm active neutral point clamped converter of claim 1, wherein three of said phase circuits share two dc bus capacitors, said two dc bus capacitors being connected in series.
3. The hybrid three-level stacked hybrid bridge arm active neutral point clamped converter of claim 2, wherein the low-frequency silicon-based bridge arm is connected in parallel with a high-frequency silicon carbide-based bridge arm, the high-frequency silicon carbide-based bridge arm is connected with a silicon carbide-based bridge arm filter inductor, and the other side of the silicon carbide-based bridge arm filter inductor is connected with an alternating current side output terminal.
4. The hybrid three level stacked hybrid leg active neutral point clamped converter of claim 3, wherein said power frequency silicon-based legs and said low frequency silicon-based legs use insulated gate bipolar transistors and said high frequency silicon carbide-based legs use metal oxide semiconductor field effect transistors.
5. The hybrid three-level stacked hybrid bridge arm active neutral point clamped converter of claim 4, wherein said insulated gate bipolar transistor Q of said power frequency silicon-based bridge arm 1x 、Q 6x A group of signals are shared by the gates of the power frequency silicon-based bridge arm insulated gate bipolar transistor Q 5x 、Q 4x A set of signals is shared by the gates of (a).
6. The hybrid three level stacked hybrid bridge arm active neutral point clamped converter of claim 5, wherein said power frequency silicon based bridge arm insulated gate bipolar transistor Q 1x 、Q 6x Gate signal of (2) and insulated gate bipolar transistor Q of power frequency silicon-based bridge arm 5x 、Q 4x Gate signal complementation of the low-frequency silicon-based bridge arm insulated gate bipolar transistor Q 2x 、Q 3x Is complementary to the gate signal of (c).
7. The hybrid three-level stacked hybrid bridge arm active neutral point clamped converter of claim 4, 5 or 6, wherein said high frequency silicon carbide based bridge arm mosfet Q 7x 、Q 8x Is complementary to the gate signal of (a).
8. The modulation method of the hybrid three-level superimposed hybrid bridge arm active neutral point clamped converter, which is applicable to the hybrid three-level superimposed hybrid bridge arm active neutral point clamped converter described in any one of claims 1 to 6, is characterized by comprising the following steps:
s1: measuring a silicon-based bridge arm reference voltage, and judging the switching state of an insulated gate bipolar transistor in the power frequency silicon-based bridge arm according to the silicon-based bridge arm reference voltage;
s2: measuring the silicon-based bridge arm carrier voltage, and judging the magnitude relation between the silicon-based bridge arm carrier voltage and the silicon-based bridge arm reference voltage;
s3: judging the switching state of the insulated gate bipolar transistor in the low-frequency silicon-based bridge arm according to the magnitude relation between the carrier voltage of the silicon-based bridge arm and the reference voltage of the silicon-based bridge arm;
s4: and measuring the reference voltage and the carrier voltage of the high-frequency silicon carbide-based bridge arm, judging the service condition of the metal oxide semiconductor field effect transistor in the high-frequency silicon carbide-based bridge arm according to the magnitude relation, and outputting corresponding levels according to different switch states.
9. The modulation method of the hybrid three-level stacked hybrid bridge arm active neutral point clamped converter according to claim 8, wherein the power frequency silicon-based bridge arm in the step S1 and the low frequency silicon-based bridge arm in the step S3 share a silicon-based bridge arm reference voltage and a silicon-based bridge arm carrier voltage.
10. The modulation method of the hybrid three-level stacked hybrid bridge arm active neutral point clamped converter according to claim 8 or 9, wherein the total number of switching states in step S4 is 8.
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