CN117646191A

CN117646191A - Reactive precursor vaporizer and atomic layer deposition system containing same

Info

Publication number: CN117646191A
Application number: CN202311829401.3A
Authority: CN
Inventors: 谭华强
Original assignee: Tuojing Technology Shanghai Co ltd
Current assignee: Tuojing Technology Shanghai Co ltd
Priority date: 2023-12-27
Filing date: 2023-12-27
Publication date: 2024-03-05

Abstract

The present application relates to a reactive precursor vaporizer and an atomic layer deposition system comprising the same, the reactive precursor vaporizer comprising: a top cover; an evaporator body connected to the top cover, the evaporator body and the top cover defining a space; a conduit located in the space and connected to the top cover, the conduit extending generally in the 1 st direction; and an ultrasonic oscillator in contact with the evaporator body. Such a design can further promote the growth per cycle of atomic layer deposition.

Description

Reactive precursor vaporizer and atomic layer deposition system containing same

Technical Field

The present application relates to a semiconductor device including the design and manufacture of its components.

Background

Atomic Layer Deposition (ALD) is a thin film deposition technique that allows deposition of ultra thin films a few nanometers thick in a precisely controlled manner. It is based on the sequential use of gas phase chemical processes. Most ALD reactions use two chemicals called precursors. These precursors react with the material surface in a sequential, self-limiting manner. Thin films are slowly deposited by repeated exposures to different precursors.

During atomic layer deposition, a film is grown on a substrate by exposing its surface to alternating gaseous species (commonly referred to as precursors or reactants). Unlike chemical vapor deposition, the precursors never exist simultaneously in the reactor, but are inserted as a series of sequential, non-overlapping pulses. In each pulse, the precursor molecules react with the surface in a self-limiting manner, so that the reaction is terminated once all available sites on the surface are consumed.

Thus, the maximum mass deposited on the surface after a single exposure of all precursors (the so-called ALD cycle) is determined by the nature of the precursor-surface interactions. By varying the number of cycles, material can be grown uniformly and with high precision on arbitrarily complex and large substrates.

ALD is a critical process for fabricating semiconductor devices and is also part of the synthetic nanomaterial toolset. It is an active research area, and hundreds of different processes are published in the scientific literature. ALD is a deposition method with great potential that allows control of film thickness and composition at the atomic level.

Disclosure of Invention

The following presents a general description of the basic features of the present application in order to provide a basic understanding of some aspects of the present application.

Drawings

Aspects of the present application will be readily appreciated from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that the various features may not be drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion.

FIG. 1 illustrates an ALD deposition system 100 according to some embodiments of the present application.

Fig. 2 shows a reaction precursor evaporator 103 according to some comparative embodiments of the present application.

Fig. 3a shows a reaction precursor evaporator 103a according to some embodiments of the present application.

Fig. 3b shows a partial enlarged view of the area of the dashed box in fig. 3a.

Fig. 4 illustrates a reaction precursor evaporator 103b according to some embodiments of the present application.

Fig. 5 illustrates a reaction precursor evaporator 103c according to some embodiments of the present application.

Fig. 6 illustrates a reaction precursor evaporator 103d according to some embodiments of the present application.

Fig. 7 illustrates a reaction precursor evaporator 103e according to some embodiments of the present application.

Fig. 8a shows a reaction precursor evaporator 103f according to some embodiments of the present application.

Fig. 8b shows a reaction precursor evaporator 103g according to some embodiments of the present application.

Fig. 8c shows a reaction precursor evaporator 103h according to some embodiments of the present application.

Fig. 8d shows a reaction precursor evaporator 103i according to some embodiments of the present application.

Detailed Description

For clarity and conciseness of illustration, the same reference numbers in different drawings denote the same components unless specified otherwise. In addition, descriptions and details of well-known steps and components may be omitted for simplicity of the description. The use of the word "substantially" or "substantially" means that the value of a component has a parameter that is expected to be close to the stated value or position. However, as is well known in the art, there is always a slight difference that prevents a value or position from being exactly the stated value or position. It is well recognized in the art that deviations up to at least ten percent (10%) (and even to twenty percent (20%)) for some components including semiconductor doping concentrations are reasonable deviations from the ideal target exactly as described. The terms "first," "second," "third," and the like in the claims and/or in the detailed description, are used for distinguishing between similar elements and not necessarily for describing a sequential order, either temporally, spatially, in ranking, or in any other manner. It is to be understood that the terms so used are interchangeable under appropriate circumstances and that the embodiments described herein are capable of operation in other sequences than described or illustrated herein. Reference to "some embodiments" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, the appearances of the phrase "in some embodiments" appearing in various places throughout the specification are not necessarily all referring to the same embodiment, but, in some cases, may. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments, as would be apparent to one of ordinary skill in the art.

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below. Of course, these are merely examples and are not intended to be limiting. In this application, recitation of a first feature being formed on or over a second feature in the description that follows may include embodiments in which the first feature is formed in direct contact with the second feature, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present application may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Embodiments of the present application are discussed in detail below. However, it should be appreciated that many of the applicable concepts provided herein can be embodied in a wide variety of specific contexts. The particular embodiments discussed are merely illustrative and do not limit the scope of the application.

Atomic layer deposition system

FIG. 1 illustrates an ALD deposition system 100 according to some embodiments of the present application. The ALD system 100 may generally perform operations to deposit thin films on a semiconductor substrate 112. The ALD deposition system 100 may include a process chamber 102 and a reactant delivery system 101.

The process chamber 102 may include a dispenser 106. The process chamber 102 is in fluid communication with a reactant delivery system 101 for delivering reactants or cleaning gases (not shown in fig. 1), such as process gas 104, carrier gas 109, liquid precursor 111, etc., to a distributor 106.

Reactant delivery system 101 can include a mixing vessel 804 for mixing and/or conditioning the reactants delivered to distributor 106. One or more mixing vessel inlet valves 120 may control the input of process gas 104 to the mixing vessel 804.

Some of the reactants may be stored in liquid form (e.g., liquid precursor 111) before being delivered to the process chamber 102. The reactant delivery system 101 can include a reactive precursor vaporizer 103 for vaporizing a liquid precursor 111 that is intended to be provided to a mixing vessel 804. When the saturated reactant vapor generated from the reaction precursor vaporizer 103 is not adequately controlled at the proper location of the delivery conduit (e.g., when no helium is used to vaporize/atomize the liquid precursor 111), it may condense downstream of the delivery conduit. Exposure of the incompatible gas to the condensed reactants produces small particles. These small particles may clog pipes, block valve operations, contaminate substrates, and the like. The transfer tubing may be purged and/or evacuated to remove residual reactants. The transfer line downstream of the reaction precursor vaporizer 103 may be heat treated. The mixing vessel 804 may be heat treated. The piping downstream of the reaction precursor evaporator 103 can have an increasing temperature profile from about 100 ℃ up to about 150 ℃ at the mixing vessel 804.

The dispenser 106 may be fluidly connected to a mixing vessel 804. The distributor 106 may be in fluid connection with the reaction precursor vaporizer 103. The distributor 106 may be in fluid connection with the process liquid. The dispenser 106 may dispense the reactant onto the substrate 112, and the flow of the reactant may be controlled by one or more valves (e.g., valves 120, 120A, 105) upstream of the dispenser 106. The substrate 112 may be located below the dispenser 106. The substrate 112 may be positioned on the substrate support pedestal 108. The dispenser 106 may include an appropriate number and arrangement of ports to dispense reactants to the substrate 112.

Accordingly, the ALD deposition system 100 of the present application may include a process chamber 102 and a reaction precursor vaporizer 103. The process chamber 102 may be in fluid communication with a reaction precursor vaporizer 103.

The process chamber 102 may include a substrate support pedestal 108. A space 107 is defined between the dispenser 106 and the substrate support pedestal 108. Space 107 may be located below dispenser 106. The space 107 may be located above a substrate support pedestal 108. The substrate support pedestal 108 may be raised or lowered to expose the base 112 to the space 107 and/or to change the size of the space 107.

The dispenser 106 and substrate support pedestal 108 may be electrically connected to an RF power supply 114 and a matching network 116 to ignite a plasma. The energy of the plasma may be controlled by controlling one or more parameters of the pressure of the process chamber 102, the concentration of the gas, the RF source power, the RF source frequency, and the timing of the plasma power pulses. The RF power source 114 and the matching network 116 may be operated at any suitable power to form a plasma having the desired composition of radical species. Any suitable parameter may be modulated, either discretely or continuously, to provide plasma energy for the surface reaction. The plasma power may be pulsed intermittently to reduce ion bombardment of the substrate surface relative to a continuously energized plasma.

The process chamber 102 may include a heater 110 to control the temperature of the substrate support pedestal 108.

The interior space of the process chamber 102 may be maintained in a vacuum state by a valve 118. The pressure in the process chamber 102 may be controlled by operating a vacuum source such as valve 118. Valve 118 may regulate the vacuum provided by a downstream vacuum pump (not shown in FIG. 1). The pressure of the process chamber 102 may be controlled by varying the flow of one or more gases introduced into the process chamber 102. One or more valve-operated vacuum sources (e.g., valve 118) may be used to remove reactants from the space 107 surrounding the substrate 112 during the appropriate ALD operation stage.

Reaction precursor evaporator

To use the liquid precursor 111 as a reactant in an ALD process, the liquid precursor 111 may be vaporized to form a reactant at the reaction precursor vaporizer 103 and then delivered to the dispenser 106. In the vaporizer 103, a small flow of the liquid precursor 111 may be applied to the heated surface to cause vaporization of the liquid precursor 111. The vaporized precursor should not include any droplets and should have a uniform concentration and accurate dosing.

Fig. 2 shows a reaction precursor evaporator 103 according to some comparative embodiments of the present application. The reaction precursor evaporator 103 may include: top cap 228, evaporator body 220, and conduit 240.

The evaporator body 220 may be coupled to the top cover 228 such that a seal is provided between the evaporator body 220 and the top cover 228. The evaporator body 220 can include a sidewall 221 and a bottom 224. The sidewall 221 may surround the bottom 224. The evaporator body 220 may define a space 241 with the top cover 228. The top cap 228 may define a space 241 with the sidewall 221 and the bottom 224. A conduit 240 may be located in the space 241. Conduit 240 may be connected to cap 228. Conduit 240 may pass through cap 228. The evaporator body 220 may extend generally along the y-axis direction. Catheter 240 may extend generally along the y-axis.

The evaporator body 220 can define an opening 222. The sidewall 221 may define an opening 222.

In some preferred embodiments, the evaporator body 220 can include a divider 244. A partition 244 may be located in the space 241. The partition 244 may define a space 241' with the sidewall 221 and the top cap 228. The partition 244 may define a space 241 "with the sidewall 221 and the bottom 224. The separator 244 may comprise a plate containing spaced apart apertures. The separator 244 may include a porous medium. The separator 244 may provide porous separation of the space 241 'and the space 241'. The pore size of the separator 244 can be about 5 to 50 microns. The separator 244 may comprise stainless steel. The evaporator body 220 can include a bracket 246. The bracket 246 may be used to maintain the position of the divider 244 opposite the space 241".

The support 246 may include an annular plate 245 having apertures 247 passing generally in the y-axis direction. The holes 247 may be evenly distributed around the annular plate 245. Fasteners 248 may be inserted through holes 247 to secure annular plate 245 to base 224. The annular plate 245 may include a flange 249. Flange 249 may be adjacent an upper portion of annular plate 245. Flange 249 may extend generally along the x-axis. The flange 249 may extend generally radially inward of the annular plate 245. Flange 249 may hold divider 244 in place over space 241 ".

The liquid precursor 111 may be provided to the vaporizer main body 220. The carrier gas 109 may be provided to the vaporizer body 220. Carrier gas 109 may be provided to conduit 240. Catheter 240 includes a tip 242. The tip 242 may extend through the divider 244 and into the space 241 ". The carrier gas 109 may flow into the liquid precursor 111 located in the space 241 ". The liquid precursor 111 may pass from the space 241 "through the partition 244.

The temperature of the reaction precursor evaporator 103 can be controlled. The temperature of the evaporator body 220 can be controlled. For example, the bottom 224 may include a heater 230 to provide heat to the bottom 224. A thermocouple or temperature sensor 250 may be provided to monitor the temperature of the bottom 224. The heater 230 may be disposed at the bottom 224. The heater 230 may be disposed on a surface of the bottom 224 remote from the space 241. The bottom 224 may include a heater 230.

The top cap 228 may include a level sensor 70 to sense the level of the liquid precursor 111 in the vaporizer body 220. Any suitable type of level sensor 70 may be used. The top cover 228 may include a valve 272. The valve 272 may be centrally disposed with respect to the cap 228. The cap 228 may include a connector 278. Carrier gas 109 may be supplied to valve 272 via connector 278. The cap 228 may include a channel 279. The carrier gas 109 may flow through the channel 279 and into the inlet of the valve 272. The channel 279 may preheat the carrier gas 109 as the carrier gas 109 enters the reactive precursor vaporizer 103.

The valve 272 may include an inlet in communication with the channel 279 and an outlet in communication with the evaporator body 220. The cap 228 may include a connector 276. The connector 276 may be used to deliver the liquid precursor 111 to the vaporizer body 220. The connector 276 may be used to remove the liquid precursor 111 from the vaporizer body 220.

The connector 276 may be fluidly connected to a conduit 298. The catheter 298 may extend generally in the y-axis direction. In the y-axis direction, the length of catheter 298 is shorter than catheter 240. The conduit 298 may provide or remove the liquid precursor 111 into the vaporizer body 220. The second conduit 298 may have an end connected to the connector 276. The liquid precursor 111 is provided into the vaporizer main body 220 through a conduit 298. Carrier gas 109 is provided into space 241 "via conduit 240. Vaporization of the liquid precursor 111 occurs and the vaporized liquid precursor 111 forms a reactant that may then be provided to the dispenser 106.

ALD deposition cycle

Thus, returning to FIG. 1, the basic ALD cycle of deposition on a substrate 112 may include:

(i) The reactant (e.g., vaporized liquid precursor 111) is adsorbed onto the substrate 112, forming an adsorption-limiting layer,

(ii) The non-adsorbed reactants are removed from the space 107 surrounding the adsorbed reactants,

(iii) Reacting the adsorbed reactants to form a layer on the substrate 112, and

(iv) The desorbed film reactant and/or reaction byproducts are removed from the space 107 surrounding the film layer formed on the substrate 112.

The removal operations in steps (ii) and (iv) may be accomplished via cleaning, evacuating the space 107 surrounding the substrate 112 to a background pressure (or "base pressure"), or the like. Steps (i) through (iv) of the basic ALD sequence do not necessarily involve two or more chemisorbed reactants, depending on the desired deposition chemistry involved.

Due to the adsorption-defining nature of ALD, a single monolayer of material may be deposited by a single ALD cycle. The sequence of operations in a typical ALD cycle, such as steps (i) through (iv) above, generally needs to be repeated multiple times to form a conformal film of the desired thickness.

ALD processes may be used to deposit conformal silicon oxide films (SiOx). ALD processes may be used to deposit conformal dielectric films of other chemistries. The ALD-formed dielectric film may include a silicon carbide (SiC) material, a silicon nitride (SiN) material, a silicon carbonitride (SiCN) material, or combinations thereof. The dielectric film formed by ALD may include silicon-carbon oxide, silicon-carbon-oxynitride, silicon-carbon-nitride.

The ALD-formed dielectric film may include a film containing dopants. Various dopant-containing reactants can be used to form the dopant-containing film. Such As boron doped silicate glass (BSG) films, phosphorus doped silicate glass (PSG) films, boron phosphorus doped silicate glass (BPSG) films, arsenic (As) doped silicate glass (ASG) films, and the like. The dopant-containing film may include B ₂ O ₃ 、B ₂ O、P ₂ O ₅ 、P ₂ O ₃ 、As ₂ O ₃ 、As ₂ O ₅ And the like. Dopant-containing films having dopants other than boron are possible, such as dopants including gallium, phosphorus, or arsenic, or other elements suitable for doping semiconductor substrates, such as other group III and group V elements.

The ALD process may be performed at a variety of temperatures. A suitable temperature range for the substrate support may be between about 25 ℃ and 450 ℃, or between about 50 ℃ and 300 ℃, or between about 20 ℃ and 400 ℃, or between about 200 ℃ and 400 ℃, or between about 100 ℃ and 350 ℃.

The ALD process may be performed at a variety of process chamber 102 pressures. Suitable pressures in the process chamber 102 may range between about 10 mtorr and 10 torr, or between about 20 mtorr and 8 torr, or between about 50 mtorr and 5 torr, or between about 100 mtorr and 2 torr.

If a plasma is used in step (iii), a variety of RF powers may be employed to generate the plasma. Suitable RF power ranges may be between about 100 watts and 10 kilowatts, or between about 200 watts and 6 kilowatts, or between about 500 watts and 3 kilowatts, or between about 1 kilowatt and 2 kilowatts.

A variety of process gas 104 flow rates may be employed in step (I). Suitable flow rates may range from about 0.1 mL/min to 10 mL/min or between about 0.5 mL/min and 5 mL/min or between about 1 mL/min and 3 mL/min or between 1 mL/min and 3 mL/min.

A variety of carrier gas 109 flow rates may be used in various operations. The carrier gas 109 flow rate may range from about or between 1 liter/min and 20 liters/min, or from about or between 2 liters/min and 10 liters/min.

For the optional inert gas cleaning step in steps (ii) and (iv), the inert gas flow rate employed may range from about or between 20 liters/min and 100 liters/min, or from about or between 40 liters/min and 60 liters/min.

Again, the pumping to background pressure step refers to pumping the process chamber 102 to background pressure by directly exposing the process chamber 102 to one or more vacuum pumps. The background pressure may typically be only a few millitorr (e.g., between about 1 to 20 millitorr). The exhausting to background pressure step may or may not be accompanied by an inert purge, and thus the inert gas may or may not flow when the valve or valves open a conductive path to the vacuum pump.

Multiple ALD cycles may be repeated to create a stacked conformal layer. Each layer may have substantially the same composition. Sequential ALD deposited layers may have different compositions, or in some such embodiments, the compositions may alternate layer by layer or there may be a repeating sequence of layers having different compositions.

From the above, the output of the reaction precursor evaporator 103 is fed to the process chamber 102. The output of the reaction precursor vaporizer 103 is fed to fill the line space connected to the process chamber 102. The pressure is gradually increased to a predetermined value and then the reactant is delivered from the reaction precursor vaporizer 103 to the process chamber 102. Then, in the reaction precursor evaporator 103, the pressure gradually decreases.

The ALD process is limited by its principle, so that the film Growth rate is slow, and on the premise of ensuring the film performance, the Growth Per Cycle (GPC) and the ALD deposition cycle time are two parameters that are the most critical to measure the ALD process performance. It has been found that the growth per cycle is affected by the output rate of the reactant stream from the reaction precursor vaporizer 103 and/or the cleaning efficiency of the process chamber 102. However, the supply amount and supply time of the reactant from the liquid precursor 111 to the reaction precursor vaporizer 103 are controlled by the temperature of the reaction precursor vaporizer 103. After the reactant is output from the reaction precursor vaporizer 103, it takes a longer time to achieve the desired vapor pressure of the liquid precursor 111 for the next output, resulting in further elevation per cycle of growth.

Fig. 3a shows a reaction precursor evaporator 103a according to some embodiments of the present application. Fig. 3b shows a partial enlarged view of the area of the dashed box in fig. 3a. The reaction precursor evaporator 103a is substantially the same as the reaction precursor evaporator 103 shown in fig. 2, with the following differences:

the reaction precursor evaporator 103a may include an ultrasonic oscillator 30. The ultrasonic oscillator 30 may be in contact with the evaporator body 220. The ultrasonic oscillator 30 may be in contact with the bottom 224. The ultrasonic oscillator 30 may not be in contact with the sidewall 221. The ultrasonic oscillator 30 may be disposed on a surface of the bottom 224 remote from the space 241. The bottom 224 may include an ultrasonic oscillator 30.

The bottom 224 may include a protrusion 224' extending generally in the y-axis direction. The protrusion 224' may clamp the ultrasonic oscillator 30. The protrusion 224' may surround the ultrasonic oscillator 30. The protrusion 224' may be in contact with the ultrasonic oscillator 30. The tab 224' may be connected to the base 224 in any manner, such as, but not limited to: integrally formed, welded, or locked, etc.

In a direction substantially along the y-axis, the space 241 may be partitioned from the ultrasonic oscillator 30 via the evaporator body 220. The space 241' may be partitioned from the ultrasonic oscillator 30 via the evaporator body 220. The space 241″ may be partitioned from the ultrasonic oscillator 30 via the evaporator body 220. The space 241 may be partitioned from the ultrasonic oscillator 30 via the bottom 224. The space 241' may be partitioned from the ultrasonic oscillator 30 via the bottom 224. The space 241″ may be partitioned from the ultrasonic oscillator 30 via the bottom 224.

The ultrasonic oscillator 30 may include an oscillator 302. The ultrasonic oscillator 30 may be configured to cause movement of the vibrator 302 in a direction generally along the y-axis. Ultrasonic energy generated when the oscillator 302 oscillates may reach the space 241 through the evaporator body 220. The ultrasonic energy may propagate generally along the y-axis direction to efficiently pass through the bottom 224 of the evaporator body 220. Ultrasonic energy generated by the ultrasonic oscillator 30 may reach the space 241' through the evaporator body 220. Ultrasonic energy generated by the ultrasonic oscillator 30 may reach the space 241 "via the evaporator body 220.

After the ultrasonic oscillator 30 is installed in the reaction precursor vaporizer 103, in order to reduce or suppress bubbles generated when ultrasonic waves are conducted to the surface of the vaporizer main body 220 facing the space 241, the ultrasonic oscillator 30 may be placed in the region where the bottom 224 or the vaporizer main body 220 has a flat surface. The above positions facilitate mounting of the vibrator 302 with vibration occurring substantially in the y-axis direction, suppressing power transfer loss of ultrasound.

In order to reduce or suppress bubbles generated when ultrasonic waves are conducted to the surface of the evaporator body 220 facing the space 241, the surface of the evaporator body 220 facing the space 241 may not include a vane. The surface of the evaporator body 220 facing the space 241 may not be textured. The surface of the evaporator body 220 facing the space 241 may be a smooth surface. The surface of the evaporator body 220 facing the space 241 may be a polished surface. The surface of the sidewall 221 facing the space 241 may not include a vane. The surface of the sidewall 221 facing the space 241 may not be textured. The surface of the sidewall 221 facing the space 241 may be a smooth surface. The surface of the sidewall 221 facing the space 241 may be a polished surface. The surface of the bottom 224 facing the space 241 may not include a vane. The surface of the bottom 224 facing the space 241 may not be textured. The surface of the bottom 224 facing the space 241 may be a smooth surface. The surface of the bottom 224 facing the space 241 may be a polished surface.

The ultrasonic oscillator 30 may be electrically coupled to a power supply of the ultrasonic oscillator 30. The oscillation frequency of the oscillator 302 may cover a plurality of frequency bands, the lower limit of the frequency band may be 20KHz, and the upper limit of the frequency band may be 100KHz. The oscillation frequency of oscillator 302 is, for example and without limitation: 20. 30, 40, 50, 60, 70, 80, 90 or 100KHz, a suitable oscillation frequency band may be any combination of the above values.

The heater 230 may be adjacent to the ultrasonic oscillator 30. The heater 230 may be adjacent to the protrusion 224'. The heater 230 may surround the ultrasonic oscillator 30. The heater 230 may surround the protrusion 224'. The projection of the heater 230 along the x-axis direction may overlap the protrusion 224'. The projection of the heater 230 in the x-axis direction may overlap with the ultrasonic oscillator 30. Projection of the projection 224' in the x-axis direction may overlap with the ultrasonic oscillator 30. Accordingly, the ultrasonic oscillator 30 suitable for the present disclosure can withstand high temperatures. The ultrasonic oscillator 30 may be selected according to different liquid precursors 111 and their vaporization temperatures.

It has been found that by controlling the temperature of the vaporizer body 220 and the oscillation frequency of the oscillator 302, the vaporization rate of the liquid precursor 111 can be adjusted to improve the reactant stream output rate of the reaction precursor vaporizer 103 a. The ultrasonic frequency bands suitable for the present disclosure include low frequency (20 KHz-50 KHz), high frequency (> 50 KHz-80 KHz) and ultra-high frequency (> 80 KHz-100 KHz). At low frequency, bubbles are less likely to be generated due to the lower cavitation threshold, but the energy state to activate the liquid precursor 111 is less efficient, resulting in a lower partial pressure of the liquid precursor 111 in the carrier gas 109. Conversely, at the high frequency band, bubbles are easily generated due to the higher cavitation threshold, but the energy state for activating the liquid precursor 111 is more efficient, resulting in a higher partial pressure of the liquid precursor 111 in the carrier gas 109. In order to suppress the generation of bubbles of the liquid precursor 111 caused by the ultrasonic cavitation effect, it is necessary to control the cavitation threshold. The cavitation threshold of the liquid precursor 111 has been found to be related to, among other factors, the frequency of oscillation of the oscillator 302 and the temperature of the liquid precursor 111. Therefore, by selecting an appropriate temperature of the evaporator body 220 and oscillation frequency of the oscillator 302 in combination with different evaporation temperatures of the liquid precursor 111, it is possible to improve the reactant flow output speed of the reaction precursor evaporator 103a while reducing or suppressing bubble generation according to the design rule (as shown in table 1).

TABLE 1

Temperature of evaporator body 220	Oscillation frequency of oscillator 302
		>350℃～400℃	20KHz～50KHz
>220℃～350℃	>50KHz～80KHz
		100℃～220℃	>80KHz～100KHz

The projection of catheter 240 along the y-axis may overlap with ultrasonic oscillator 30. The projection of the catheter 298 along the y-axis may overlap with the ultrasonic oscillator 30. The projection of catheter 240 along the y-axis may overlap projection 224'. The projection of the catheter 298 along the y-axis may overlap with the projection 224'. The projection of catheter 240 along the y-axis may not overlap with ultrasonic oscillator 30. The projection of the catheter 298 along the y-axis may not overlap with the ultrasonic oscillator 30. The projection of catheter 240 along the y-axis may not overlap with projection 224'. The projection of the catheter 298 along the y-axis may not overlap with the projection 224'.

The reaction precursor evaporator 103a is provided with an ultrasonic oscillator 30 while maintaining the temperature control function of the reaction precursor evaporator 103. The inventors have unexpectedly found that by altering the state of tension of the gas-liquid interface of the liquid precursor 111 and/or increasing the energy state of the liquid precursor 111 compound molecules through the introduction of ultrasound waves, a reduced time to supply reactants from the liquid precursor 111 is achieved, further enhancing the weekly growth of the ALD deposition system 100.

Fig. 4 illustrates a reaction precursor evaporator 103b according to some embodiments of the present application. The reaction precursor evaporator 103b is substantially identical to the reaction precursor evaporator 103a shown in fig. 3a, 3b, with the following differences:

The reaction precursor evaporator 103b may further include an ultrasonic coupling layer 50 as compared to the reaction precursor evaporator 103 a. In a direction generally along the y-axis, the evaporator body 220 and the ultrasonic oscillator 30 may be partitioned via the ultrasonic coupling layer 50. In a direction generally along the y-axis, the bottom 224 and the ultrasonic oscillator 30 may be separated via the ultrasonic coupling layer 50. The ultrasonic coupling layer 50 may be in contact with the evaporator body 220. The ultrasound coupling layer 50 may be in contact with the bottom 224. The ultrasonic coupling layer 50 may contact the protrusion 224'. The ultrasonic coupling layer 50 may be in contact with the ultrasonic oscillator 30. The protrusion 224' may surround the ultrasound coupling layer 50.

The projection of catheter 240 along the y-axis may overlap with ultrasound coupling layer 50. The projection of the catheter 298 along the y-axis direction may overlap with the ultrasound coupling layer 50. The projection of catheter 240 along the y-axis may not overlap with ultrasound coupling layer 50. The projection of the catheter 298 along the y-axis may not overlap with the ultrasound coupling layer 50. The projection of the ultrasonic coupling layer 50 in the y-axis direction may overlap with the ultrasonic oscillator 30. The projection of the heater 230 along the x-axis direction may overlap with the ultrasonic coupling layer 50. The projection of the heater 230 along the x-axis direction may not overlap with the ultrasonic coupling layer 50.

Herein, an "ultrasound coupling layer" may be a substance for transmitting sound waves in an ultrasound device, such as, but not limited to: ultrasonic transduction glue. Accordingly, the ultrasonic oscillator 30 may be directly connected to the evaporator body 220. The ultrasonic oscillator 30 may be directly connected to the bottom 224. The ultrasonic coupling layer 50 may be used to reduce the void volume between the ultrasonic oscillator 30 and the evaporator body 220. The ultrasonic coupling layer 50 may be used to reduce the void volume between the ultrasonic oscillator 30 and the bottom 224.

Fig. 5 illustrates a reaction precursor evaporator 103c according to some embodiments of the present application. The reaction precursor evaporator 103c is substantially the same as the reaction precursor evaporator 103b shown in fig. 4, with the following differences:

in a direction substantially along the x-axis, the vaporizer body 220 may be partitioned from the ultrasonic oscillator 30 via the ultrasonic coupling layer 50, as compared to the reaction precursor vaporizer 103 b. In a direction generally along the x-axis, the bottom 224 and the ultrasonic oscillator 30 may be separated via the ultrasonic coupling layer 50. In a direction generally along the x-axis, the protrusion 224' may be spaced from the ultrasonic oscillator 30 via the ultrasonic coupling layer 50. The protrusion 224' may surround the ultrasound coupling layer 50.

The projection of the ultrasonic coupling layer 50 in the x-axis direction may overlap with the ultrasonic oscillator 30. The projection of the ultrasound coupling layer 50 along the x-axis direction may overlap with the projection 224'. A surface 50m of the ultrasound coupling layer 50 may be coplanar with a surface 224'm of the protrusion 224'.

Fig. 6 illustrates a reaction precursor evaporator 103d according to some embodiments of the present application. The reaction precursor evaporator 103d is formed by replacing the bottom 224 included in the reaction precursor evaporator 103a shown in fig. 3a and 3b with the bottom 224d. The bottom 224d is substantially identical to the bottom 224. The bottom 224d includes a protrusion 224d'. The arrangement of the bottom 224d and the protrusion 224d 'is substantially the same as the arrangement of the bottom 224 and the protrusion 224'. Specifically, the difference between the reaction precursor evaporator 103d and the reaction precursor evaporator 103a is as follows:

the bottom 224d may be configured to expose the ultrasonic oscillator 30 to the opening 222. The bottom 224d may be configured to expose the ultrasonic oscillator 30 to the space 241. The bottom 224d may be configured to expose the ultrasonic oscillator 30 space 241". The ultrasonic oscillator 30 may be in contact with the space 241. The ultrasonic oscillator 30 may be in contact with the space 241". A surface 30t of the ultrasonic oscillator 30 may be coplanar with a surface 224dt of the bottom 224d. For example, the bottom 224d may include an opening to expose the ultrasonic oscillator 30.

Thus, the ultrasonic oscillator 30 may be in contact with the liquid precursor 111. According to the ultrasound homogeneous conduction mechanism, the ultrasonic energy generated when the oscillator 302 oscillates can reach the space 241 via the evaporator body 220. Ultrasonic energy may propagate in a substantially y-axis direction and ultrasonic energy generated by the ultrasonic oscillator 30 may reach the space 241' via the evaporator body 220. Ultrasonic energy generated by the ultrasonic oscillator 30 may reach the space 241 "via the evaporator body 220.

Fig. 7 illustrates a reaction precursor evaporator 103e according to some embodiments of the present application. The reaction precursor evaporator 103e is substantially the same as the reaction precursor evaporator 103d shown in fig. 6, with the following differences:

the reaction precursor evaporator 103e may further include an ultrasonic coupling layer 50 as compared to the reaction precursor evaporator 103 d. In a direction generally along the x-axis, the evaporator body 220 and the ultrasonic oscillator 30 may be partitioned via the ultrasonic coupling layer 50. In a direction generally along the x-axis, the bottom 224d may be spaced from the ultrasonic oscillator 30 via the ultrasonic coupling layer 50. In a direction generally along the x-axis, the protrusion 224d' may be spaced from the ultrasonic oscillator 30 via the ultrasonic coupling layer 50. In a direction generally along the y-axis, the space 241 may be partitioned from the ultrasound coupling layer 50 via the evaporator body 220. In a direction generally along the y-axis, the space 241 may be separated from the ultrasound coupling layer 50 by a bottom 224 d. In a direction generally along the y-axis, the space 241 "may be separated from the ultrasound coupling layer 50 via the evaporator body 220. In a direction generally along the y-axis, the space 241 "may be separated from the ultrasound coupling layer 50 by a bottom 224 d.

The ultrasonic coupling layer 50 may be in contact with the evaporator body 220. The ultrasonic coupling layer 50 may be in contact with the bottom 224 d. The ultrasonic coupling layer 50 may contact the protrusion 224 d'. The ultrasonic coupling layer 50 may be in contact with the ultrasonic oscillator 30. The ultrasonic coupling layer 50 may surround the ultrasonic oscillator 30. The protrusion 224d' may surround the ultrasonic coupling layer 50.

The projection of the ultrasonic coupling layer 50 in the x-axis direction may overlap with the ultrasonic oscillator 30. Projection of the projection 224d' in the x-axis direction may overlap with the ultrasonic coupling layer 50. The projection of the heater 230 along the x-axis direction may overlap with the ultrasonic coupling layer 50.

A surface 50m of the ultrasound coupling layer 50 may be coplanar with a surface 224'm of the protrusion 224'. In the y-axis direction, a surface 50t of the ultrasonic coupling layer 50 may define a height h >0 with a surface 30t of the ultrasonic oscillator 30.

The bottom 224d may include a protrusion 224 d) extending generally in the x-axis direction. The protrusion 224d″ may clamp the ultrasonic oscillator 30. The protrusion 224d″ may surround the ultrasonic oscillator 30. In the y-axis direction, the protrusion 224d″ may cover the ultrasonic coupling layer 50. The projection 224d″ may be in contact with the ultrasonic oscillator 30. The protrusion 224d″ may contact the ultrasonic coupling layer 50. Projection of the projection 224d″ in the x-axis direction may overlap with the ultrasonic coupling layer 50. The tab 224d "may be connected to the base 224 in any manner, such as, but not limited to: integrally formed, welded, or locked, etc.

Fig. 8a shows a reaction precursor evaporator 103f according to some embodiments of the present application. The reaction precursor evaporator 103f is formed by replacing the side wall 221 included in the reaction precursor evaporator 103a shown in fig. 3a and 3b with a main body 221f and replacing the bottom 224 included with a bottom 224f. Sidewall 221f is substantially identical to sidewall 221. The bottom 224f is substantially identical to the bottom 224. Specifically, the difference between the reaction precursor evaporator 103f and the reaction precursor evaporator 103a is as follows:

sidewall 221f may include layer 221a, layer 221b, and layer 221c. In the x-axis direction, layer 221a may be adjacent to space 241. Layer 221a may be adjacent to space 241'. Layer 221a may be adjacent to space 241". Layer 221a may contact space 241. Layer 221a may contact space 241'. Layer 221a may contact space 241". Layer 221b may be remote from space 241. Layer 221b may be remote from space 241'. Layer 221b may be remote from space 241". In the x-axis direction, layer 221c may be located between layer 221a and layer 221 b.

Bottom 224f includes layers 224a, 224b, and 224c. In the y-axis direction, layer 224a may be adjacent to opening 222. Layer 224a may be adjacent to space 241. Layer 224a may be adjacent to space 241'. Layer 224a may be adjacent to space 241". Layer 224a may contact space 241. Layer 224a may contact space 241". Layer 224b may be remote from opening 222. Layer 224b may be remote from space 241. Layer 224b may be remote from space 241'. Layer 224b may be remote from space 241". Layer 224b may be adjacent to heater 230. In the y-axis direction, layer 224c may be located between layer 224a and layer 224 b.

Layer 221a may be connected to layer 221 c. Layer 221c may be connected to layer 221 b. Layer 224a may be connected to layer 224 c. Layer 224c may be connected to layer 224 b. Layer 221a may be connected to layer 224 a. Layer 221b may be connected to layer 224 b. Layer 221c may be connected to layer 224 c.

The bottom 224f may include a protrusion 224f'. The arrangement of the protrusion 224f 'and the bottom 224f is substantially identical to the arrangement of the protrusion 224' and the bottom 224. The tab 224f' may be connected to the layer 224 b. The protrusion 224f' may contact the layer 224 b. The protrusion 224f' may extend from the layer 224b in the y-axis direction.

Layer 224a may cover ultrasonic oscillator 30. Layer 224b may cover ultrasonic oscillator 30. Layer 224b may be in contact with ultrasonic oscillator 30. Layer 224c may cover ultrasonic oscillator 30. The projection of layer 224a along the y-axis may overlap with projection 224f'. The projection of layer 224b along the y-axis may overlap with projection 224f'. The projection of layer 224c along the y-axis may overlap with projection 224f'. The projection of layer 224a along the y-axis may overlap with ultrasonic oscillator 30. The projection of layer 224b along the y-axis may overlap with ultrasonic oscillator 30. The projection of layer 224c along the y-axis may overlap with ultrasonic oscillator 30.

In the y-axis direction, ultrasonic oscillator 30 may be separated from opening 22 by layer 224 a. Ultrasonic oscillator 30 may be separated from opening 22 by layer 224 b. Ultrasonic oscillator 30 may be separated from opening 22 by layer 224 c. The ultrasonic oscillator 30 may be separated from the space 241 by a layer 224 a. The ultrasonic oscillator 30 may be separated from the space 241 by a layer 224 b. Ultrasonic oscillator 30 may be separated from space 241 by layer 224 c.

Layer 221c may have a higher thermal conductivity than layer 221 a. Layer 221c may have a higher thermal conductivity than layer 221 b. Layer 224c may have a higher thermal conductivity than layer 224 a. Layer 224c may have a higher thermal conductivity than layer 224 b. The materials of layers 221a, 221b, 224a, 224b are for example, but not limited to: and (3) steel. The materials of layers 221c, 224c are for example, but not limited to: aluminum. The inventors have unexpectedly found that the use of layer 221c or layer 224c having a higher thermal conductivity can improve the temperature field uniformity inside the reaction precursor evaporator 103f (e.g., spaces 241, 241', 241 ") while not impeding the introduction of ultrasonic energy into the ultrasonic oscillator 30.

Fig. 8b shows a reaction precursor evaporator 103g according to some embodiments of the present application. The reaction precursor evaporator 103g is substantially identical to the reaction precursor evaporator 103f shown in fig. 8a, with the following differences:

the bottom 224f may be configured to expose the ultrasonic oscillator 30 to the opening 222. Layer 224a may be configured to expose ultrasonic oscillator 30 to opening 222. Layer 224b may be configured to expose ultrasonic oscillator 30 to opening 222. Layer 224c may be configured to expose ultrasonic oscillator 30 to opening 222. The bottom 224f may be configured to expose the ultrasonic oscillator 30 to the space 241. Layer 224a may be configured to expose ultrasonic oscillator 30 to space 241. Layer 224b may be configured to expose ultrasonic oscillator 30 to space 241. Layer 224c may be configured to expose ultrasonic oscillator 30 to space 241. The bottom 224f may be configured to expose the ultrasonic oscillator 30 space 241". Layer 224a may be configured to expose ultrasonic oscillator 30 space 241". Layer 224b may be configured to expose ultrasonic oscillator 30 space 241". Layer 224c may be configured to expose ultrasonic oscillator 30 space 241". The ultrasonic oscillator 30 may be in contact with the space 241. The ultrasonic oscillator 30 may be in contact with the space 241". Ultrasonic oscillator 30 may be in contact with layer 224 a. Ultrasonic oscillator 30 may be in contact with layer 224 b. Ultrasonic oscillator 30 may be in contact with layer 224 c. A surface 30t of ultrasonic oscillator 30 may be coplanar with a surface 224at of layer 224 a. For example, the bottom 224f may include an opening to expose the ultrasonic oscillator 30. Layer 224a may include openings to expose ultrasonic oscillator 30. Layer 224b may include openings to expose ultrasonic oscillator 30. Layer 224c may include openings to expose ultrasonic oscillator 30.

The projection of layer 224a along the x-axis may overlap with ultrasonic oscillator 30. The projection of layer 224b along the x-axis may overlap with ultrasonic oscillator 30. The projection of layer 224c along the x-axis may overlap with ultrasonic oscillator 30. The projection of layer 224a along the y-axis may not overlap with ultrasonic oscillator 30. The projection of layer 224b along the y-axis may not overlap with ultrasonic oscillator 30. The projection of layer 224c along the y-axis may not overlap with ultrasonic oscillator 30.

Fig. 8c shows a reaction precursor evaporator 103h according to some embodiments of the present application. The reaction precursor evaporator 103h is substantially identical to the reaction precursor evaporator 103f shown in fig. 8a, with the following differences:

layer 224b may be configured to expose ultrasonic oscillator 30 to layer 224a. Layer 224c may be configured to expose ultrasonic oscillator 30 to layer 224a. Ultrasonic oscillator 30 may be in contact with layer 224a. Ultrasonic oscillator 30 may be in contact with layer 224 b. Ultrasonic oscillator 30 may be in contact with layer 224 c. A surface 30t of ultrasonic oscillator 30 may be coplanar with a surface 224bt of layer 224 b. For example, layer 224b may include openings to expose ultrasonic oscillator 30. Layer 224c may include openings to expose ultrasonic oscillator 30.

In the y-axis direction, ultrasonic oscillator 30 may be separated from opening 22 by layer 224 a. The ultrasonic oscillator 30 may be separated from the space 241 by a layer 224 a.

The projection of layer 224a along the x-axis may not overlap with ultrasonic oscillator 30. The projection of layer 224b along the x-axis may overlap with ultrasonic oscillator 30. The projection of layer 224c along the x-axis may overlap with ultrasonic oscillator 30. The projection of layer 224a along the y-axis may overlap with ultrasonic oscillator 30. The projection of layer 224b along the y-axis may not overlap with ultrasonic oscillator 30. The projection of layer 224c along the y-axis may not overlap with ultrasonic oscillator 30.

Fig. 8d shows a reaction precursor evaporator 103i according to some embodiments of the present application. The reaction precursor evaporator 103i is substantially identical to the reaction precursor evaporator 103f shown in fig. 8a, with the following differences:

layer 224b may be configured to expose ultrasonic oscillator 30 to layer 224c. Ultrasonic oscillator 30 may be in contact with layer 224 b. Ultrasonic oscillator 30 may be in contact with layer 224c. A surface 30t of the ultrasonic oscillator 30 may be coplanar with a surface 224ct of the layer 224c. For example, layer 224b may include openings to expose ultrasonic oscillator 30.

In the y-axis direction, ultrasonic oscillator 30 may be separated from opening 22 by layer 224 a. Ultrasonic oscillator 30 may be separated from opening 22 by layer 224c. The ultrasonic oscillator 30 may be separated from the space 241 by a layer 224 a. Ultrasonic oscillator 30 may be separated from space 241 by layer 224c.

The projection of layer 224a along the x-axis may not overlap with ultrasonic oscillator 30. The projection of layer 224b along the x-axis may overlap with ultrasonic oscillator 30. The projection of layer 224c along the x-axis may not overlap with ultrasonic oscillator 30. The projection of layer 224a along the y-axis may overlap with ultrasonic oscillator 30. The projection of layer 224b along the y-axis may not overlap with ultrasonic oscillator 30. The projection of layer 224c along the y-axis may overlap with ultrasonic oscillator 30.

It has been unexpectedly found that the reactive precursor evaporators 103a-i of the additional ultrasonic oscillator 30 are not only effective ways to improve the growth per cycle of the ALD deposition system 100, but also can achieve effective evaporation of the liquid precursor 111, thereby improving evaporation efficiency and uniformity. The reaction precursor evaporators 103a to i can effectively increase the evaporation rate of the liquid precursor 111 by introducing ultrasonic waves on the basis of the temperature control function of the reaction precursor evaporator 103. This elevation not only shortens the time for providing the reactants from the liquid precursor 111, but also shortens the overall ALD deposition cycle time, thereby improving the throughput of the ALD deposition system 100.

As used herein, spatially relative terms such as "below," "lower," "above," "upper," "lower," "left," "right," and the like may be used herein for ease of description to describe a component or feature's relationship to another component or feature as illustrated in the figures. In addition to the orientations depicted in the figures, the spatially relative terms are intended to encompass different orientations of the device in use or operation. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

It should be noted that the values of width, distance, etc. described in this application are merely illustrative, and this application is not limited thereto. In some embodiments, these values may be adjusted according to the actual application of the invention without departing from the spirit of the invention of the present application.

As used herein, the terms "about," "substantially," and "about" are used to describe and contemplate small variations. When used in connection with an event or circumstance, the term can refer to instances where the event or circumstance occurs explicitly and instances where it is very close to the event or circumstance. As used herein with respect to a given value or range, the term "about" or "similar" generally means within ±10%, ±5%, ±1% or ±0.5% of the given value or range. Ranges can be expressed herein as from endpoint to endpoint, or between two endpoints. Unless otherwise specified, all ranges disclosed herein include endpoints. The term "substantially coplanar" may refer to two surfaces that are positioned along a same plane within a few micrometers (μm), such as within 10 μm, within 5 μm, within 1 μm, or within 0.5 μm. When referring to "substantially" the same value or feature, the term may refer to a value that is within ±10%, ±5%, ±1% or ±0.5% of the average value of the value.

The foregoing has outlined features of several embodiments and detailed aspects of the present application. The embodiments described in this application may be readily used as a basis for designing or modifying other processes and structures for carrying out the same or similar purposes and/or obtaining the same or similar advantages of the embodiments introduced herein. Such equivalent constructions do not depart from the spirit and scope of the present application and are susceptible to various changes, substitutions and alterations without departing from the spirit and scope of the present application.

While the subject matter of the present specification has been described in terms of certain preferred and exemplary embodiments, the foregoing drawings and description of the present specification depict only typical, non-limiting examples of embodiments of the subject matter, and therefore the preceding drawings and description are not to be considered as limiting its scope, as many alternatives and modifications will be apparent to those skilled in the art.

As the following claims reflect, aspects of the subject application may lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims presented below are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this application. Furthermore, although some embodiments described herein include some features that are included in other embodiments, but not others, those of skill in the art will understand that combinations of features of different embodiments are intended to be within the scope of the present application, and are intended to form different embodiments.

Claims

1. A reaction precursor vaporizer, comprising:

a top cover;

an evaporator body connected to the top cover, the evaporator body and the top cover defining a space;

a conduit located in the space and connected to the top cover, the conduit extending generally in the 1 st direction; and

An ultrasonic oscillator in contact with the evaporator body.

2. The reaction precursor vaporizer of claim 1, wherein the ultrasonic oscillator is in contact with the space.

3. The reaction precursor vaporizer of claim 1, wherein the space is separated from the ultrasonic oscillator via the vaporizer body in a direction substantially along the 1 st direction.

4. A reaction precursor evaporator according to any one of claims 1 to 3, wherein the ultrasonic oscillator comprises an oscillator that moves in a direction substantially along the 1 st direction.

5. The reactive precursor evaporator of any of claims 1-3, further comprising an ultrasonic coupling layer, wherein the evaporator body is spaced from the ultrasonic oscillator via the ultrasonic coupling layer in a direction generally along the 1 st direction.

6. The reactive precursor evaporator of any of claims 1-3, further comprising an ultrasonic coupling layer, wherein the evaporator body is spaced from the ultrasonic oscillator via the ultrasonic coupling layer in a direction substantially perpendicular to the 1 st direction.

7. A reaction precursor vaporizer according to any one of claims 1 to 3, wherein the projection of the conduit in the 1 st direction overlaps the ultrasonic oscillator.

8. An atomic layer deposition system, comprising:

a processing chamber; and

the reaction precursor evaporator according to any one of claim 1 to 7,

wherein the process chamber is in fluid connection with the reaction precursor vaporizer.

9. The atomic layer deposition system of claim 8, further comprising a carrier gas source fluidly connected to the conduit.

10. The atomic layer deposition system according to claim 8 or 9, wherein the process chamber comprises a reactant distributor in fluid connection with the reaction precursor vaporizer.

11. A reaction precursor vaporizer, comprising:

an evaporator body comprising a sidewall and a bottom, wherein the evaporator body extends generally in a 1 st direction and defines an opening;

A heater disposed at the bottom of the evaporator main body; and

And an ultrasonic oscillator disposed at the bottom of the evaporator body.

12. The reactive precursor evaporator of claim 11, wherein the bottom is configured to expose the ultrasonic oscillator to the opening.

13. The reaction precursor evaporator of claim 11, wherein the opening is spaced from the ultrasonic oscillator via the bottom in a direction generally along the 1 st direction.

14. The reaction precursor evaporator of any of claims 11-13, wherein the bottom portion comprises a protrusion' extending generally in the 1 st direction.

15. The reaction precursor evaporator according to any one of claims 11 to 13, wherein the bottom comprises:

layer 1, adjacent to the opening;

layer 2, which is remote from the opening; and

layer 3, it is located between said layer 1 and layer 2.

16. The reactive precursor evaporator of claim 15, wherein the layer 1 is configured to expose the ultrasonic oscillator to the opening.

17. The reactive precursor evaporator of claim 15, wherein the 3 rd layer is configured to expose the ultrasonic oscillator to the 1 st layer.

18. The reaction precursor vaporizer of claim 17, wherein the layer 3 is in contact with the ultrasonic oscillator.

19. The reactive precursor evaporator of claim 15, wherein the layer 2 is configured to expose the ultrasonic oscillator to the layer 3.

20. The reaction precursor vaporizer of claim 19, wherein the ultrasonic oscillator comprises a vibrator that produces movement in a direction generally along the 1 st direction.