CN117642852A - Protective cap, electronic device, and method for manufacturing protective cap - Google Patents
Protective cap, electronic device, and method for manufacturing protective cap Download PDFInfo
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- CN117642852A CN117642852A CN202280050217.6A CN202280050217A CN117642852A CN 117642852 A CN117642852 A CN 117642852A CN 202280050217 A CN202280050217 A CN 202280050217A CN 117642852 A CN117642852 A CN 117642852A
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- protective cap
- cover
- frame
- antireflection film
- contact
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- 230000001681 protective effect Effects 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 230000003746 surface roughness Effects 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims description 41
- 239000002245 particle Substances 0.000 claims description 28
- 238000005304 joining Methods 0.000 claims description 13
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 239000006117 anti-reflective coating Substances 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 238000007789 sealing Methods 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000012216 screening Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- HFGHRUCCKVYFKL-UHFFFAOYSA-N 4-ethoxy-2-piperazin-1-yl-7-pyridin-4-yl-5h-pyrimido[5,4-b]indole Chemical compound C1=C2NC=3C(OCC)=NC(N4CCNCC4)=NC=3C2=CC=C1C1=CC=NC=C1 HFGHRUCCKVYFKL-UHFFFAOYSA-N 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Led Device Packages (AREA)
- Telephone Set Structure (AREA)
- Casings For Electric Apparatus (AREA)
Abstract
The protective cap of the present invention comprises: a frame portion; a cover portion covering one end portion of the frame portion; and an engagement portion that engages the frame portion with the cover portion. The cover portion has a first surface that contacts an end of the frame portion via the engagement portion. The first surface has a first antireflection film. The first antireflection film has a contact portion that contacts the frame portion. The surface roughness Sa of the contact portion is 0.1-1.0 nm.
Description
Technical Field
The invention relates to a protective cap, an electronic device and a method for manufacturing the protective cap.
Background
Electronic devices including electronic components such as LEDs are used in various fields such as lighting and communication for the purpose of long service life and energy saving.
In such an electronic device, a protective cap may be covered on a base material on which the electronic component is mounted so as to house the electronic component therein in order to protect the electronic component. For example, as disclosed in patent document 1, the protective cap includes: a frame (second member) surrounding the periphery of the electronic component; and a cover portion (cover member) covering one end opening of the frame portion.
The protective cap is integrally formed by joining the frame portion and the cover portion. As a method of joining the frame and the cover, for example, a method of welding a part of the frame and a part of the cover by irradiating a laser to a contact portion where the frame and the cover are in contact with each other may be mentioned. As a technique for joining two members by laser light, for example, patent document 2 discloses a method of overlapping a first substrate and a second substrate and forming a welded portion (fusion portion) at an interface region between the first substrate and the second substrate by irradiation of laser light.
Prior art literature
Patent literature
Patent document 1: international publication No. 2015/190242
Patent document 2: japanese patent laid-open No. 2021-88468
Disclosure of Invention
Problems to be solved by the invention
In addition, in the case where the electronic component is a light emitting element such as an LED, it is considered to form an antireflection film on the cover portion in order to improve light extraction efficiency. For example, in the case where the antireflection film is formed on the entire front and back surfaces of the lid, when the frame and the lid are overlapped for bonding, a part of the antireflection film contacts the frame.
In this state, when the joining by the laser beam is performed, the antireflection film is interposed between the frame and the cover, and there is a possibility that the welding between the frame and the cover is insufficient.
The present invention has been made in view of the above-described circumstances, and an object of the present invention is to appropriately join a frame and a cover even when an antireflection film is interposed between the frame and the cover.
Means for solving the problems
The present invention is a protective cap for protecting an electronic component, the protective cap comprising: a frame portion; a cover portion covering one end portion of the frame portion; and a joining portion joining the frame portion and the cover portion, the cover portion having a first surface that contacts the one end portion of the frame portion via the joining portion, the first surface having a first antireflection film that has a contact portion that contacts the frame portion, the contact portion having a surface roughness Sa of 0.1 to 1.0nm.
According to this configuration, the surface roughness Sa of the contact portion of the first antireflection film is set to 0.1 to 1.0nm, so that the adhesion of the contact portion to the contact portion of the frame portion can be improved. Thus, by irradiating the contact portion with laser light, a joint portion having sufficient joint strength can be formed. In addition, even when the protective cap is required to be airtight, sufficient airtightness of the joint portion can be ensured.
The cover may have a second surface located on the opposite side of the first surface, and the second surface may have a second antireflection film. Thus, when an electronic device emitting light is manufactured using the protective cap, the light extraction efficiency can be further improved.
An electronic device according to the present invention is characterized by comprising: an electronic component; a base material on which the electronic component is mounted; and the protective cap is bonded to the base material so as to house the electronic component therein. In this way, the same operational effects as those of the corresponding structure of the protective cap described above can be enjoyed.
The present invention is a method of manufacturing the protective cap, comprising: a film forming step of forming the first antireflection film on the first surface of the lid portion by a film forming apparatus that performs a physical vapor deposition method; and a bonding step of bonding the first surface of the cover portion to the one end portion of the frame portion, wherein the film forming apparatus includes: a holding tool that holds the cover and is movable in a predetermined direction; a target for scattering particles of a material that becomes the first antireflection film; and a shielding member that restricts a direction in which the particles scattered from the target scatter, wherein in the film forming step, a part of the particles scattered from the target is shielded by the shielding member, and the particles scattered without being in contact with the shielding member are attached to the first surface of the cover portion that moves while being held by the holding tool.
According to this configuration, by shielding a part of the particles scattered from the target by the shielding member, the particles can be uniformly attached to the first surface of the cover. This can reduce the surface roughness of the first antireflection film as much as possible.
In the present method, the target may include a first target and a second target that are juxtaposed, and the shielding member may be disposed between the first target and the second target.
According to this configuration, the scattering directions of the particles scattered from the first target and the particles scattered from the second target are restricted by the shielding member, and the surface roughness of the first antireflection film can be reduced as much as possible.
In the method, the shielding member may be provided to the holding tool. The surface roughness of the first antireflection film can be reduced as much as possible by shielding a part of particles scattered from the target by a shielding member provided in the holding tool.
In the bonding step of the present method, the first surface of the lid portion may be brought into contact with the one end portion of the frame portion, and laser light may be irradiated to the contact portion, so that the first surface of the lid portion and the one end portion of the frame portion may be directly bonded. This can produce a protective cap having excellent air tightness and high bonding strength.
Effects of the invention
According to the present invention, even when the antireflection film is interposed between the frame and the cover, the frame and the cover can be appropriately joined.
Drawings
Fig. 1 is a sectional view of a protective cap.
Fig. 2 is a sectional view of fig. 1 from the line of sight II.
Fig. 3 is a schematic view of the film forming apparatus.
Fig. 4 is a cross-sectional view showing a process in the manufacturing method of the protective cap.
Fig. 5 is a cross-sectional view showing a process in the manufacturing method of the protective cap.
Fig. 6 is a plan view showing a process in the manufacturing method of the protective cap.
Fig. 7 is a cross-sectional view showing a process in a method of manufacturing an electronic device.
Fig. 8 is a schematic diagram showing another example of the film forming apparatus.
Detailed Description
Hereinafter, embodiments for carrying out the present invention will be described with reference to the accompanying drawings. Fig. 1 to 8 show an embodiment of a protective cap, an electronic device, and a method of manufacturing the protective cap according to the present invention.
As shown in fig. 1 and 2, the electronic device 1 includes: an electronic component 2; a base material 3 on which the electronic component 2 is mounted; a protective cap 4 disposed on the base material 3 so as to house the electronic component 2 therein; and a sealing part 5 for sealing the base material 3 and the protective cap 4.
As shown in fig. 1, the electronic component 2 is fixed to the base material 3 and is accommodated in a space inside the protective cap 4. Examples of the electronic component 2 include optical devices such as a laser module, an LED light source, a photosensor, an imaging element, and an optical switch. In the present embodiment, a case where the electronic component 2 is an ultraviolet radiation LED will be described as an example.
The base material 3 has: a first surface 3a for supporting the electronic component 2 and the protective cap 4; and a second surface 3b located on the opposite side of the first surface 3a. In the present embodiment, the base material 3 is a plate-like body having a planar first surface 3a and a planar second surface 3 b. The shape is not limited to this, and the substrate 3 may have a recess in a portion of the first surface 3a where the electronic component 2 is mounted.
The substrate 3 is made of, for example, metal oxide ceramic, LTCC, or metal nitride ceramic. Examples of the metal include copper and metallic silicon. Examples of the metal oxide ceramic include alumina. Examples of LTCC include a material obtained by sintering a composite powder containing crystalline glass and a refractory filler.
As goldExamples of the nitride ceramics include aluminum nitride. In the present embodiment, the base material 3 is made of aluminum nitride. The thermal expansion coefficient of aluminum nitride in the temperature range of 30 to 380 ℃ is 46X 10, for example -7 /℃。
As shown in fig. 1, the protective cap 4 includes: a frame 6; a cover 7 covering one end of the frame 6; and an engagement portion 8 that engages the frame portion 6 with the cover portion 7.
The frame 6 is a cylindrical body having a through portion (hole) H at its center. The frame 6 surrounds the electronic component 2 accommodated in the space corresponding to the through portion (hole) H. The frame 6 is formed of a square tube, but may be formed of another shape such as a cylinder.
The frame portion 6 has a first end surface 6a fixed to the cover portion 7 and a second end surface 6b fixed to the base material 3. The surface roughness Sa (arithmetic mean surface height) of the first end face 6a is preferably 0.1 to 1.0nm. The surface roughness Sa of the second end face 6b is preferably 0.1 to 1.0nm. The surface roughness Sa was measured based on ISO25178 (the same applies hereinafter).
The frame 6 is made of a light-transmitting material, for example, a material having a thermal expansion coefficient of 30×10 in a temperature range of 30 to 380 ℃ -7 ～100×10 -7 Glass material at/deg.C. The glass material of the frame portion 6 is preferably ultraviolet-transmitting glass.
The thickness of the frame 6 is preferably 0.01 to 1mm, more preferably 0.05 to 0.5mm, and most preferably 0.1 to 0.2mm larger than the electronic component 2.
The cover 7 is made of a light-transmitting substrate. Specifically, the cover 7 is composed of a glass substrate including quartz glass, borosilicate glass, aluminosilicate glass, and other various glasses, a sapphire substrate, a resin substrate, and the like.
In this embodiment, a case will be described in which a quartz glass substrate having high ultraviolet transmittance is used for the lid portion 7. Fused silica and synthetic quartz are included in the quartz glass. The thermal expansion coefficient of the fused silica glass in the temperature range of 30 to 380℃is, for example, 6.3X10 -7 The thermal expansion coefficient of the synthetic quartz glass in the temperature range of 30 to 380 ℃ per DEG C is, for example, 4.0X10- 7 /℃。
The thickness of the lid 7 is preferably 0.1 to 1.0mm, more preferably 0.2 to 0.8mm, and most preferably 0.3 to 0.6mm.
The cover portion 7 has a first surface 7a fixed to the frame portion 6 and a second surface 7b located on the opposite side of the first surface 7a.
The first surface 7a has an antireflection film (hereinafter referred to as "first antireflection film") 9 as a functional film. The first antireflection film 9 has, for example, a structure in which silicon oxide films (SiO 2 ) Hafnium oxide film (HfO 2 ) The material of the antireflection film is not limited to the present embodiment, but the multilayered film structure is formed.
The first surface 7a is in contact with one end portion (first end surface 6 a) of the frame portion 6 via the joint portion 8 and the first antireflection film 9. The first antireflection film 9 has a contact portion 9a that contacts the frame portion 6. The surface roughness of the contact portion 9a is 0.1 to 1.0nm, more preferably 0.1 to 0.8nm, and still more preferably 0.2 to 0.5nm. By setting the surface roughness Sa of the contact portion 9a to 1.0nm or less, the weldability between the lid portion 7 and the frame portion 6 can be improved, and sufficient air tightness of the joint portion 8 can be ensured. Further, by setting the surface roughness Sa of the contact portion 9a to 0.1nm or more, the effect of the antireflection film can be ensured. The surface roughness Sa of the first antireflection film 9 other than the contact portion 9a is preferably 0.1 to 1.0nm in the same manner.
The second surface 7b is a surface constituting a part of the outer surface of the protective cap 4. The second surface 7b has an antireflection film (hereinafter referred to as "second antireflection film") 10 as a functional film. The second antireflection film 10 has, for example, a structure in which silicon oxide films (SiO 2 ) Hafnium oxide film (HfO 2 ) The material of the second antireflection film 10 is not limited to the present embodiment, but the multilayer film structure is formed.
The joint 8 for joining the frame 6 and the cover 7 is formed by a welded portion 11 formed by directly welding the frame 6 and the cover 7. The welded portion 11 is formed by laser welding. Specifically, the welded portion 11 is formed by melting at least one of the frame portion 6 and the lid portion 7 in the laser irradiation region and then solidifying the melted portion. That is, the welding portion 11 is made of, for example, at least one of the frame portion 6 and the cover portion 7, and preferably does not substantially include any material other than the frame portion 6 and the cover portion 7.
As shown in fig. 2, the welded portions 11 are formed in a plurality (two in the drawing) in concentric circles along the through portion (hole) H, but may be one. The plurality of fusion-spliced portions 11 are separated from each other, but may be overlapped. Each welded portion 11 is formed in a rectangular ring shape in plan view, but the present invention is not limited thereto, and may be formed in a circular ring shape or other ring shapes.
The welded portion 11 is formed continuously across the frame portion 6 and the lid portion 7 in the thickness direction. In the present embodiment, there is no interface between the frame 6 and the cover 7 in the welded portion 11. Of course, an interface may remain between the frame 6 and the cover 7 in the welded portion 11.
The width S1 of the welded portion 11 is preferably 10 to 200. Mu.m, more preferably 10 to 100. Mu.m, and most preferably 10 to 50. Mu.m. The thickness S2 of the welded portion 11 is preferably 10 to 200. Mu.m, more preferably 10 to 150. Mu.m, and most preferably 10 to 100. Mu.m.
The sealing portion 5 for sealing the base material 3 and the frame portion 6 of the protective cap 4 is not particularly limited, but in the present embodiment, the metallization layer 12 and the solder layer 13 are provided in this order from the second end surface 6b side of the frame portion 6.
The metallization layer 12 is a metal film formed on the second end surface 6b of the frame portion 6 of the protective cap 4 by, for example, a physical vapor deposition method or the like. The metallized layer 12 has an effect of improving adhesion to the solder layer 13. As the metallization layer 12, for example, cr, ti, ni, pt, au, co and an alloy layer containing them, a multilayer film of these metals and alloys, or the like can be used.
As the solder layer (solder) 11, for example, au, sn, ag, pb and a layer containing an alloy of these metals, that is, au—sn-based solder, sn—ag-based solder, pb-based solder, or the like are used. The Au-Sn solder has a thermal expansion coefficient of 175X 10 in a temperature range of 30 to 380 DEG C -7 /℃。
Hereinafter, a method of manufacturing the electronic device 1 having the above-described structure will be described. The method for manufacturing the electronic device 1 includes a method for manufacturing the protective cap 4.
The method for manufacturing the electronic device 1 includes a preparation step for preparing the protective cap 4 and a sealing step for fixing the protective cap 4 to the base material 3.
The preparation step is a step (method) of manufacturing the protective cap 4. The preparation process comprises the following steps: a film forming step of forming antireflection films 9, 10 on the cover 7; and a bonding step of bonding the frame 6 and the cover 7 after the film forming step.
In the film forming step, the antireflection films 9 and 10 are formed on the first surface 7a and the second surface 7b of the lid 7 by a film forming apparatus that performs a physical vapor deposition method. The case where the first antireflection film 9 is formed on the first surface 7a by the film forming apparatus 14 will be described below with reference to fig. 3.
In the present embodiment, the film forming apparatus 14 is exemplified as a sputtering apparatus such as a magnetron sputtering apparatus, but the present invention is not limited to this configuration, and a film forming apparatus that performs other physical vapor deposition methods such as a vacuum vapor deposition method may be used.
The film forming apparatus 14 includes: a vacuum chamber 15; a holding tool 16 for holding the cover 7; a rotating body 17 (rotating drum) that supports the holding tool 16; targets 18a, 18b for scattering particles serving as a material of the first antireflection film 9; and a shielding member 19 that limits the scattering direction of particles scattered from the targets 18a, 18b.
The vacuum chamber 15 accommodates therein the holding tool 16, the rotating body 17, and the targets 18a and 18b. The internal space of the vacuum chamber 15 is set to a predetermined vacuum degree by a vacuum pump. An inert gas such as argon gas can be supplied into the vacuum chamber 15.
The holding tool 16 holds the cover 7 so as to be detachable in a state where the first surface 7a of the cover 7 is exposed. The holding tool 16 is made of metal, but the material of the holding tool 16 is not limited to the present embodiment.
The rotary body 17 is formed in a circular shape, and the plurality of holding tools 16 are detachably held on the outer peripheral surface thereof. The rotating body 17 rotates about a rotation axis 17a at the center thereof, thereby moving the holding tool 16 in the circumferential direction thereof.
The targets 18a and 18b include a first target 18a and a second target 18b disposed in parallel in the vacuum chamber 15. The first target 18a and the second target 18b are made of a material for forming the first antireflection film 9.
The shielding member 19 is made of a metal plate-like member, but is not limited to this material and shape. The shielding member 19 is disposed between the rotating body 17 and the targets 18a and 18b. The shielding member 19 is disposed between the first target 18a and the second target 18b which are disposed in parallel.
In the film forming step, the rotating body 17 is rotated, a part of the particles scattered from the targets 18a and 18b is shielded by the shielding member 19, and the scattered particles not in contact with the shielding member 19 are attached to the first surface 7a of the cover 7 moving while being held by the holding tool 16.
Specifically, as shown in fig. 3, a part of the particles scattered from the targets 18a and 18b is scattered toward the rotating body 17 without contacting the shielding member 19 as indicated by an arrow D1. The other part of the particles scattered from the targets 18a and 18b is scattered so as to contact the shielding member 19 as indicated by an arrow D2.
In this way, a part of the particles scattered from the targets 18a and 18b is shielded by the shielding member 19, and the incidence angle of the particles with respect to the first surface 7a of the cover 7 held by the holding tool 16 is restricted. This makes it possible to uniformly adhere particles to the first surface 7a of the cover 7.
Particles scattered from the targets 18a and 18b are deposited on the first surface 7a by the rotation of the rotating body 17 several times, thereby forming a film having a predetermined thickness. When the first antireflection film 9 has a multilayer film structure, a target corresponding to the material constituting each layer is prepared, and the above-described film forming process is repeatedly performed a plurality of times. Thereby, the first antireflection film 9 is formed on the first surface 7a of the cover 7.
In the film forming step, the second antireflection film 10 can be formed on the second surface 7b of the lid 7 by the film forming device 14 in the same manner as the film formation of the first antireflection film 9. The order of forming the first antireflection film 9 and the second antireflection film 10 is not particularly limited, and the second antireflection film 10 may be formed before the first antireflection film 9.
In the joining step of joining the frame portion 6 and the cover portion 7, the first surface 7a of the cover portion 7 is joined to the first end surface 6a, which is one end portion, of the frame portion 6. That is, in the joining step, the first surface 7a of the lid portion 7 is brought into contact with the first end surface 6a of the frame portion 6, and laser light is irradiated to the contacted portion, whereby the first surface 7a of the lid portion 7 and the first end surface 6a of the frame portion 6 are directly welded.
Specifically, first, as shown in fig. 4, the lid portion 7 and the frame portion 6 formed with the metallization layer 12 and the solder layer 13 are prepared. Next, the first surface 7a of the cover 7 is brought into contact with the first end surface 6a of the frame 6. In this case, the contact portion 9a of the first antireflection film 9 formed on the first surface 7a of the cover 7 is in contact with the first end surface 6a of the frame 6.
In this state, as shown in fig. 5, the laser beam L is condensed and irradiated by the laser irradiation device 20 to the contact portion where the frame 6 and the cover 7 are in contact. The laser beam L is irradiated from at least one side of the frame 6 and the cover 7. In the present embodiment, the laser light L is irradiated from the lid portion 7 side. Thereby, the contact portion where the frame portion 6 and the cover portion 7 are in contact is welded to form a welded portion 11, and the frame portion 6 and the cover portion 7 are joined by the welded portion 11.
As the laser light L, an ultrashort pulse laser having a pulse width in the picosecond and femtosecond order is suitably used.
The wavelength of the laser light L is not particularly limited as long as it transmits through the glass member, but is preferably 400 to 1600nm, more preferably 500 to 1300nm, for example. The pulse width of the laser light L is preferably 10ps or less, more preferably 5ps or less, and most preferably 200fs to 3ps. The laser beam L preferably has a condensed diameter of 50 μm or less, more preferably 30 μm or less, and still more preferably 20 μm or less.
The repetition frequency of the laser light L is required to be such that continuous heat accumulation occurs, and specifically, it is preferably 100kHz or more, more preferably 200kHz or more, and still more preferably 500kHz or more.
In addition, it is preferable to use a method (burst type) of irradiating with a single pulse divided into a plurality of pulses and further shortening the pulse interval. This can easily cause heat accumulation, and stably form the joint 8.
As shown in fig. 6, the laser light L is scanned outside the through-hole (hole) H so as to draw a circular track T along the through-hole (hole) H. In this case, the laser light L is scanned so that the irradiation region R overlaps the annular track T and makes one turn around the annular track T. Or the laser light L is scanned in a plurality of turns around its circular track T. When the welding portion 11 is formed in a plurality of concentric rings, the plurality of annular tracks T of the scanning laser light L are also set in a plurality of concentric rings.
A predetermined number of welded parts 11 are formed to manufacture the protective cap 4 in which the frame part 6 and the cover part 7 are joined by the joining part 8.
In the sealing step of fixing the protective cap 4 to the base material 3, first, as shown in fig. 7, the protective cap 4 obtained in the preparation step and the base material 3 on which the electronic component 2 is mounted are prepared. Next, the second end surface 6b of the frame portion 6 is brought into contact with the first surface 3a of the base material 3 via the metallization layer 12 and the solder layer 13. By heating in this state, the solder layer 13 is softened and flowed (reflowed), and the Li Yonghan layer 13 bonds the frame portion 6 to the base material 3. The solder layer 13 may be heated by a heating furnace or by a laser. Thereby, a seal 5 is formed to seal the base material 3 and the protective cap 4.
Fig. 8 shows another example of the film forming apparatus 14. In this example, shielding members 19a and 19b of the film forming apparatus 14 are provided to the holding tool 16. The shielding members 19a and 19b include a first shielding member 19a and a second shielding member 19b arranged so as to be held by sandwiching the cover portion 7 of the holding tool 16. The shielding members 19a and 19b are plate-like members made of metal, and are detachably attached to the holding tool 16. The shielding members 19a and 19b are disposed so as to face the traveling direction of the holding tool 16 (the rotation direction of the rotating body 17).
In this example, in the film forming step, a part of particles scattered from the targets 18a and 18b can be shielded by shielding members 19a and 19b provided in the holding tool 16.
According to the protective cap 4 and the method for manufacturing the electronic device 1 (the method for manufacturing the protective cap 4) of the present embodiment described above, the scattering direction of particles scattered from the targets 18a and 18b is restricted by the shielding members 19, 19a and 19b in the film forming step, and the particles can be uniformly deposited on the first surface 7a of the cover 7.
Thus, the surface roughness Sa of the contact portion 9a of the first antireflection film 9 can be set to 0.1 to 1.0nm. Accordingly, the contact portion 9a of the first antireflection film 9 can be brought into contact with the first end surface 6a of the frame portion 6, thereby improving the adhesion thereof. In this state, the laser light L is irradiated to the contacted portion, whereby the joint portion 8 having a sufficient joint strength can be formed. The joint 8 can ensure sufficient air tightness of the protective cap 4.
The present invention is not limited to the configuration of the above embodiment, and is not limited to the above-described operational effects. The present invention can be variously modified within a range not departing from the gist of the present invention.
In the above embodiment, the example in which the metallization layer 12 and the solder layer 13 are formed in advance in the frame portion 6 of the protective cap 4 to seal the base material 3 and the protective cap 4 has been described, but the present invention is not limited to this configuration. For example, a metallization layer and a solder layer may be formed on the first surface 3a of the base material 3, and the second end surface 6b of the frame portion 6 of the protective cap 4 may be sealed to the first surface 3a of the base material 3.
Instead of using the above-described metallization layer and solder layer, the second end surface 6b of the frame portion 6 may be brought into direct contact with the first surface 3a of the base material 3, and the contacted portions may be directly welded by irradiation with laser light.
Examples
Hereinafter, examples and comparative examples according to the present invention will be described. In each of the examples and comparative examples, a substrate-shaped synthetic quartz was used as a lid portion, and a square-tube-shaped synthetic quartz was used as a frame portion.
In examples 1 to 3, a silicon oxide film (SiO 2 ) With hafnium oxide film (HfO) 2 ) Antireflection films alternately laminated in two layers. It should be noted thatIn this case, the surface roughness Sa of the contact portion is adjusted by adjusting the length of the shielding member in the scattering direction of the particles that are scattered from the target that scatters the particles that are the material of the first antireflection film. On the other hand, in comparative example 1, a silicon oxide film (SiO 2 ) With hafnium oxide film (HfO) 2 ) Antireflection films alternately laminated in two layers. Thus, samples of examples 1 to 3 and the cover of comparative example 1 were obtained in which the surface roughness of the antireflection film at the contact portion was different. The antireflection film having the same surface roughness was formed also in the portion other than the contact portion of each sample.
Then, the cap was placed on the frame so that the contact portion of the cap and one end portion of the frame overlap, and an ultrashort pulse laser was irradiated to the overlapping portion to join the frame and the cap together, thereby producing a sample of the protective cap.
Then, the adhesion between the lid portion and the frame portion of the obtained sample of the protective cap was evaluated by an accelerated degradation test based on PCT (Pressure Cooker Test). Specifically, the sample of the protective cap manufactured as described above was kept at 121 ℃, 2 air pressure, and a relative humidity of 80% for 12 hours, and then the sample that could maintain the joint between the lid and the frame was judged as good "∈", and the sample that could not be maintained was judged as bad "×". The results are shown in Table 1.
TABLE 1
| Example 1 | Example 2 | Example 3 | Comparative example 1 | |
| Surface roughness Sa (nm) of contact portion | 0.2 | 0.5 | 0.8 | 1.1 |
| Bondability of cover and frame | ○ | ○ | ○ | × |
As is clear from table 1, when the surface roughness Sa of the contact portion is 1.1 or more, the bondability of the lid portion and the frame portion is deteriorated.
Description of the reference numerals
1. Electronic device
2. Electronic component
3. Substrate material
4. Protective cap
6. Frame part
First end face of 6a frame part
7. Cover part
7a first surface
7b second surface
9. First antireflection film
9a contact portion
10. Second anti-reflection film
14. Film forming apparatus
16. Holding tool
18a first target
18b second target
19. Screening member
19a first screening member
19b second screening member
L laser.
Claims (7)
1. A protective cap for protecting electronic components,
it is characterized in that the method comprises the steps of,
the protective cap is provided with: a frame portion; a cover portion covering one end portion of the frame portion; and an engagement portion that engages the frame portion with the cover portion,
the cover portion has a first surface that is in contact with the one end portion of the frame portion via the engagement portion,
the first surface has a first anti-reflective coating,
the first antireflection film has a contact portion that contacts the frame portion,
the surface roughness Sa of the contact portion is 0.1-1.0 nm.
2. The protective cap of claim 1, wherein,
the cover portion has a second surface on an opposite side of the first surface,
the second surface has a second anti-reflection film.
3. An electronic device, which is characterized in that,
the electronic device is provided with: an electronic component; a base material on which the electronic component is mounted; and the protective cap according to claim 1 or 2, which is bonded to the base material so as to house the electronic component therein.
4. A method for manufacturing a protective cap according to claim 1 or 2,
it is characterized in that the method comprises the steps of,
the manufacturing method of the protective cap comprises the following steps: a film forming step of forming the first antireflection film on the first surface of the lid portion by a film forming apparatus that performs a physical vapor deposition method; and a joining step of joining the first surface of the cover portion to the one end portion of the frame portion,
the film forming apparatus includes: a holding tool that holds the cover and is movable in a predetermined direction; a target for scattering particles of a material that becomes the first antireflection film; and a shielding member that restricts a direction in which the particles are scattered from the target,
in the film forming step, a part of the particles scattered from the target is shielded by the shielding member, and the scattered particles are attached to the first surface of the cover portion that moves while being held by the holding tool without being in contact with the shielding member.
5. The method of manufacturing a protective cap according to claim 4, wherein,
the targets include first targets and second targets arranged side by side,
the shielding member is disposed between the first target and the second target.
6. The method of manufacturing a protective cap according to claim 4, wherein,
the shielding member is provided to the holding means.
7. The method for manufacturing a protective cap according to any one of claims 4 to 6, wherein,
in the bonding step, the first surface of the cover is brought into contact with the one end of the frame, and laser light is irradiated to the contacted portion, whereby the first surface of the cover and the one end of the frame are directly bonded.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021173117A JP2023062928A (en) | 2021-10-22 | 2021-10-22 | Protective cap, electronic device, and manufacturing method for protective cap |
| JP2021-173117 | 2021-10-22 | ||
| PCT/JP2022/028063 WO2023067860A1 (en) | 2021-10-22 | 2022-07-19 | Protective cap, electronic device, and protective cap production method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117642852A true CN117642852A (en) | 2024-03-01 |
Family
ID=86059000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280050217.6A Pending CN117642852A (en) | 2021-10-22 | 2022-07-19 | Protective cap, electronic device, and method for manufacturing protective cap |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2023062928A (en) |
| KR (1) | KR20240081444A (en) |
| CN (1) | CN117642852A (en) |
| TW (1) | TW202329484A (en) |
| WO (1) | WO2023067860A1 (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6354297B2 (en) * | 2014-04-30 | 2018-07-11 | 旭硝子株式会社 | Cover glass and manufacturing method thereof |
| WO2015190242A1 (en) | 2014-06-09 | 2015-12-17 | 日本電気硝子株式会社 | Light-emitting device |
| CN112753100A (en) * | 2018-10-05 | 2021-05-04 | Ａｇｃ株式会社 | Window material and optical package |
| JP7152666B2 (en) * | 2019-03-08 | 2022-10-13 | 日亜化学工業株式会社 | Light-emitting device and manufacturing method thereof |
| JP7388119B2 (en) * | 2019-10-17 | 2023-11-29 | 日本電気硝子株式会社 | Optical window material, method for manufacturing optical window material, optical member, and method for manufacturing optical member |
| JP7342665B2 (en) | 2019-12-02 | 2023-09-12 | 日本電気硝子株式会社 | Laminated substrate and its manufacturing method |
-
2021
- 2021-10-22 JP JP2021173117A patent/JP2023062928A/en active Pending
-
2022
- 2022-07-19 CN CN202280050217.6A patent/CN117642852A/en active Pending
- 2022-07-19 WO PCT/JP2022/028063 patent/WO2023067860A1/en active Application Filing
- 2022-07-19 KR KR1020237039972A patent/KR20240081444A/en unknown
- 2022-08-03 TW TW111129081A patent/TW202329484A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW202329484A (en) | 2023-07-16 |
| JP2023062928A (en) | 2023-05-09 |
| KR20240081444A (en) | 2024-06-07 |
| WO2023067860A1 (en) | 2023-04-27 |
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