CN117637459A - Wafer mixed cutting method - Google Patents
Wafer mixed cutting method Download PDFInfo
- Publication number
- CN117637459A CN117637459A CN202311726497.0A CN202311726497A CN117637459A CN 117637459 A CN117637459 A CN 117637459A CN 202311726497 A CN202311726497 A CN 202311726497A CN 117637459 A CN117637459 A CN 117637459A
- Authority
- CN
- China
- Prior art keywords
- wafer
- cutting
- laser
- adhesive film
- front surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005520 cutting process Methods 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000002313 adhesive film Substances 0.000 claims abstract description 19
- 229910001385 heavy metal Inorganic materials 0.000 claims abstract description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000010304 firing Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 7
- 238000005498 polishing Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer mixed cutting method, which comprises the following steps: s1: providing a wafer, wherein the front surface of the wafer is provided with a plurality of transverse cutting channels and longitudinal cutting channels; s2: attaching a grinding adhesive film on the front surface of the wafer; s3: grinding the back of the wafer to thin the wafer to a required thickness; s4: attaching a back adhesive film on the back of the wafer and fixing the back adhesive film on the iron ring; s5: removing the grinding adhesive film on the front surface of the wafer; s6: cutting the cutting channel containing the heavy metal layer by using laser to burn and finish grooving; s7: cutting the wafer by a blade according to the transverse cutting channel and the longitudinal cutting channel; s8: chips are picked at the wafer edge. Compared with the prior art, the special cutting channel containing metal in the wafer is processed in a mode of mixed cutting of laser and cutter, other common cutting channels adopt a pure cutter cutting mode, laser operation is not needed on the whole wafer, the production efficiency can be effectively improved, and the cost is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer mixed cutting method.
Background
In order to match with wafer bonding and subsequent wafer testing, metal materials such as Al, cu, W and the like are added into a part of special cutting channels of a wafer to form a structure containing a heavy metal layer, and the cutting channels added with the metal materials cannot be directly cut by a blade and need to be grooved by laser. If the dicing channels of the whole wafer are all cut by laser, the utilization efficiency of equipment is low, the processing time is long, and the processing cost is increased.
Disclosure of Invention
The invention provides a wafer mixed cutting method for overcoming the defects in the prior art.
In order to achieve the above purpose, a wafer hybrid cutting method is designed, which comprises the following steps:
s1: providing a wafer, wherein the front surface of the wafer is provided with a plurality of transverse cutting channels and longitudinal cutting channels;
s2: attaching a grinding adhesive film on the front surface of the wafer;
s3: grinding the back of the wafer to thin the wafer to a required thickness;
s4: attaching a back adhesive film on the back of the wafer and fixing the back adhesive film on the iron ring;
s5: removing the grinding adhesive film on the front surface of the wafer;
s6: cutting the cutting channel containing the heavy metal layer by using laser to burn and finish grooving;
s7: cutting the wafer by a blade according to the transverse cutting channel and the longitudinal cutting channel;
s8: chips are picked at the wafer edge.
And step S6, covering the surface of the wafer with the laser protection liquid before laser firing.
The number of the blades in the step S7 is two, and the blades are arranged on two sides of the main shaft of the cutting machine.
The blade is fixedly arranged on the wafer cutting machine through the flange cover.
And the surface of the wafer is provided with identification points, and in the step S6, the cutting channel containing the heavy metal layer is subjected to laser burning processing through positioning of the identification points.
Compared with the prior art, the method has the advantages that the special cutting channels containing metal in the wafer are processed in a mode of mixed cutting of laser and knife cutting, the other common cutting channels adopt a mode of pure knife cutting, laser operation is not needed on the whole wafer, the production efficiency can be effectively improved, and the cost is reduced.
Drawings
FIG. 1 is a process flow diagram of the present invention.
Fig. 2 is a schematic view of a wafer dicing structure.
Fig. 3 is a schematic diagram of a single chip with a wafer backside film.
Fig. 4 is a schematic diagram of a wafer after hybrid dicing.
Referring to fig. 2-4, wherein 1 is a wafer, 2 is a transverse scribe line, 3 is a longitudinal scribe line, 4 is a chip, 5 is a backside adhesive film, 6 is a laser scribe line, 7 is a blade scribe line, and 8 is a pure blade scribe line.
Description of the embodiments
The invention is further described below with reference to the accompanying drawings.
As shown in fig. 1 to 4, the cutting method of the present invention comprises the steps of:
s1: a wafer 1 is provided, the front surface of which has a plurality of transverse streets 2 and longitudinal streets 3.
Specifically, the wafer 1 is a silicon wafer used for manufacturing a silicon semiconductor integrated circuit, and has a circular shape, and various circuit element structures can be manufactured on the silicon wafer, thereby forming an integrated circuit product having a specific electrical function.
S2: and attaching a polishing adhesive film on the front surface of the wafer 1.
Specifically, the wafer 1 includes two different surfaces, namely a front surface and a back surface, and one surface of the grinding adhesive film has certain viscosity, can be adhered to the front surface of the wafer, has certain thickness, prevents unnecessary damage to the front surface of the wafer in subsequent processes, and plays a role in protecting the front surface of the wafer 1.
S3: the back surface of the wafer 1 is polished to thin the wafer 1 to a desired thickness.
Specifically, the wafer 1 with the grinding adhesive film on the front surface can be clamped by the limiting device, then the back surface of the wafer 1 is primarily polished by the grinding wheel until the wafer 1 is close to the preset thickness, and then the back surface of the wafer 1 is precisely polished by the grinding sheet until the wafer 1 reaches the preset thickness.
S4: a back adhesive film 5 is attached to the back of the wafer 1 and fixed on the iron ring.
Specifically, the back adhesive film 5 is equivalent to a plastic film with double-sided adhesive, and the adhesive on one side of the back adhesive film 5 is adhered to the back of the thinned wafer 1 and is adhered to the ring frame, so that the movement of the wafer 1 can be effectively limited because the ring is a jig specially used for manufacturing the wafer 1 and has high rigidity.
S5: the grinding adhesive film on the front surface of the wafer 1 is removed.
Specifically, since there is a certain viscosity between the polishing film and the front surface of the wafer 1, when the polishing film is removed, the polishing film needs to be lifted slowly from one side of the polishing film, and then lifted to remove the film, so as to avoid unnecessary damage or residue of the film on the wafer 1.
S6: and (3) grooving the cutting channel containing the heavy metal layer by laser burning to form a laser cutting groove.
Specifically, the front surface of the wafer 1 is composed of a plurality of areas, one surface of each area is provided with a fixed special cutting channel containing a heavy metal layer, laser cauterization utilizes high-energy-density laser to locally irradiate a workpiece, so that surface layer materials are vaporized or undergo chemical reactions of color change, and a focused superfine laser beam of the laser can be used as a cutter to remove the surface materials of an object, so that a laser cutting groove 6 is formed. The laser grooving process is non-contact processing, and mechanical extrusion or mechanical stress is not generated, so that the processed object is not damaged; because the size of the focused laser is small, the heat affected zone is small and the machining is fine.
S7: the wafer 1 is cut with a blade according to the lateral dicing lanes 2 and the longitudinal dicing lanes 3, forming blade cut grooves 7 and pure blade cut grooves 8.
Specifically, in the dicing process along the lateral dicing streets 2 and the longitudinal dicing streets 3 of the wafer, the blade cuts through the lateral dicing streets 2 and the longitudinal dicing streets 3, the blade dicing grooves 7 are formed on the basis of the laser dicing grooves 6, and the pure blade dicing grooves 8 are formed directly on the wafer 1, so that separation is generated between each chip 4. The wafer 1 is vibrated to a small extent, and the positions of all parts of the wafer 1 are not affected, so that convenience is provided for subsequent chip collection.
S8: the wafer 4 is picked up at the edge of the wafer.
Specifically, the transverse scribe line 2 and the longitudinal scribe line 3 of the diced wafer 1 are already separated, and the wafer 1 is in a scattered state, but the dicing blade does not vibrate the wafer 1 strongly when dicing the wafer 1, so that the wafer 1 still maintains its original shape. The cut chips 4 are picked up, namely, the wafer 1 cutting process is completed, and then each chip 4 can be subjected to subsequent process treatment.
Optionally, a laser protection liquid is covered on the surface of the wafer 1 before laser firing in step S6.
The laser protection liquid can prevent fragments generated by the wafer 1 in the laser firing process from splashing to the surface of the wafer 1, and reduces thermal damage of a cutting area.
Optionally, two blades are arranged at two sides of the main shaft of the cutting machine in the step S7. The blade is fixedly arranged on the wafer cutting machine through the flange cover.
The two blades can cut simultaneously, so that the cutting efficiency is improved, the process time is shortened, and the equipment utilization efficiency is improved. The flange cover can firmly press and fix the blade.
Optionally, the surface of the wafer 1 is provided with identification points, and in step S6, laser firing processing is performed on the scribe line containing the heavy metal layer by positioning the identification points.
The special cutting path containing the heavy metal layer on the wafer 1 can be rapidly and accurately positioned through the identification points, and laser grooving is performed.
Claims (5)
1. The wafer mixed cutting method is characterized by comprising the following steps of:
s1: providing a wafer (1), wherein the front surface of the wafer is provided with a plurality of transverse cutting channels (2) and longitudinal cutting channels (3);
s2: attaching a grinding adhesive film on the front surface of the wafer (1);
s3: grinding the back of the wafer (1) to thin the wafer (1) to a required thickness;
s4: a back adhesive film (5) is attached to the back of the wafer (1) and fixed on the iron ring;
s5: removing the grinding adhesive film on the front surface of the wafer (1);
s6: cutting the cutting channel containing the heavy metal layer by using laser to burn and finish grooving;
s7: cutting the wafer (1) by a blade according to the transverse cutting channel (2) and the longitudinal cutting channel (3);
s8: chips (4) are picked up at the wafer edge.
2. The method for hybrid dicing of claim 1, wherein: and step S6, covering the surface of the wafer (1) with the laser protection liquid before laser firing.
3. The method for hybrid dicing of claim 1, wherein: the number of the blades in the step S7 is two, and the blades are arranged on two sides of the main shaft of the cutting machine.
4. The method for hybrid dicing of claim 4, wherein: the blade is fixedly arranged on the wafer cutting machine through the flange cover.
5. The method for hybrid dicing of claim 1, wherein: and in the step S6, laser burning processing is carried out on the cutting path containing the heavy metal layer through positioning of the identification points.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311726497.0A CN117637459A (en) | 2023-12-14 | 2023-12-14 | Wafer mixed cutting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311726497.0A CN117637459A (en) | 2023-12-14 | 2023-12-14 | Wafer mixed cutting method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117637459A true CN117637459A (en) | 2024-03-01 |
Family
ID=90028774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311726497.0A Pending CN117637459A (en) | 2023-12-14 | 2023-12-14 | Wafer mixed cutting method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117637459A (en) |
-
2023
- 2023-12-14 CN CN202311726497.0A patent/CN117637459A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106469680B (en) | Method for processing wafer | |
| KR102163441B1 (en) | Wafer processing method | |
| CN101064274B (en) | Method of dividing an adhesive film bonded to a wafer | |
| KR101938426B1 (en) | Forming method of chip with die attach film | |
| KR20160032678A (en) | SLICING METHOD OF SiC INGOT | |
| US7134942B2 (en) | Wafer processing method | |
| US20060079155A1 (en) | Wafer grinding method | |
| CN107591361B (en) | Method for manufacturing semiconductor device chip | |
| US20070155131A1 (en) | Method of singulating a microelectronic wafer | |
| CN109309047B (en) | Method of processing a substrate | |
| US10930561B2 (en) | SiC substrate processing method | |
| JP2005032903A (en) | Semiconductor device and its manufacturing method | |
| US10083849B2 (en) | Method of processing wafer | |
| KR20200125432A (en) | Method of manufacturing device chip | |
| KR20180050225A (en) | Method for processing wafer | |
| KR20120028215A (en) | Method for machining optical device wafer | |
| CN108335974B (en) | Substrate processing method | |
| CN113643972A (en) | Wafer processing method and holding table | |
| KR101966997B1 (en) | Machining method | |
| JP5846764B2 (en) | Wafer processing method | |
| KR20170029385A (en) | Wafer machining method | |
| CN109421179B (en) | Processing method | |
| CN117637459A (en) | Wafer mixed cutting method | |
| US11942327B2 (en) | Singulation of silicon carbide semiconductor wafers | |
| Klug | Advanced solutions for ultra-thin wafers and packaging |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |